CONTACT

University-Industry Cooperation and Research Program Division,
Research Program Department,
Japan Society for the Promotion of Science (JSPS)
5-3-1 Kojimachi, Chiyoda-ku, Tokyo 102-0083, JAPAN
TEL+81-3-3263-1728

University-Industry Research Cooperation Societally Applied Scientific Linkage and Collaboration

University-Industry Cooperative Research Committees

162nd Committee on Wide Bandgap Semiconductor Photonic and Electronic Devices

Aims and Goals

The physical characteristics (including the wide bandgap, high electron mobility, resistance to high temperature, and harmless materials) of wide bandgap semiconductors (including nitrides, carbides, and oxides) make possible a dramatic leap in the advancement of short wavelength optical devices, ultra-high speed electronic devices, high-power devices, power-efficient electronic devices, white LEDs, and solar cells, all of which support the information technology, energy saving technology, and green technology of the 21st century.

The committee aims to establish innovative fundamental science and technology by promoting cooperation among the frontline researchers in industry and academia in the whole process of wide bandgap semiconductor development, from crystal growth and physical property control to eventual device creation.


Research Themes

1. Development of short wavelength semiconductor laser diodes (LD) and light-emitting diodes (LED)

(1) Development of semiconductor laser diodes in green and other visible colors

(2) Development of semiconductor light-emitting diodes and laser diodes in the ultraviolet range

(3) Exclusive use of nitrides in the visible to ultraviolet ranges through the development of red light-emitting elements derived from nitrides

2. Development of ultrahigh-frequency, high-power, highly temperature resistant, power-efficient electronic devices

(1) Development of high-frequency and high-power devices in and above the microwave range

(2) Development of highly voltage resistant, high-amperage power devices

(3) Power saving in these devices

3. Exploration of green technology

(1) Development of high-efficiency white LEDs

(2) Development of clean energy sources, such as high-efficiency solar cells

(3) Development of power-efficient electronic devices

4. Epitaxial control and physical properties control of wide bandgap semiconductors and exploration of new materials

Creation of new materials including diamond in addition to the epitaxial control and physical properties control of nitrides, oxides, and SiC


Committee Chairperson

Katsumi Kishino
Professor
Sophia University


Duration

April 2016 to March 2021 (Fifth term, Five years)


Membership Composition   (As of Apr.2017)

Academia: 74
Industry: 40
Total membership: 114


Committee Web Site

http://jsps162.jpn.org/