Summary of Research Project Results under JSPS FY2001
"Research for the Future Program"



1.Research Institution Toyota Technological Institute
 
2.Research Area Physical and Engineering Sciences
 
3.Research Field Innovation in Energy Generation, Conversion, Materials and Systems for the Future
 
4.Term of Project FY 1997 〜 FY 2001
 
5.Project Number 97P00902
 
6.Title of Project Study of New Carbon-Based Materials and Solar Cells

7.Project Leader
Name Institution,Department Title of Position
Masahumi , Yamaguchi Toyota Technological Institute, Graduate School of Engineering Professor

8.Core Members

Names Institution,Department Title of Position
Nobuaki , Kojima Toyota Technological Institute, Graduate School of Engineering Research Associate
Masayoshi , Umeno Nagoya Institute of Technology, Graduate School of Engineering Professor
Tetsuo , Soga Nagoya Institute of Technology, Graduate School of Engineering Associate Professor

9.Summary of Research Results

1. Control of physical properties of the C60 films by the amorphization.
・The following physical properties of C60 films were successfully controlled by the boron or phosphorous ion-implantation induced amorphization.
 @Conduction type (n or p-type), AResistivity (108〜10-1 Ωcm), BOptical band gap (0.1〜1.3 eV)
2. C60/Si hetero-junction solar cells.
・The conversion efficiency was increased from 10-5% to 0.7% by the following cell structures.
 @undoped C60/Si cell: 10-5%, AB-ion implanted C60/Si cell: 0.02%, BB-ion implanted C60/i-C60/Si cell: 0.1%, CExcimer Laser irradiated C60/Si cell: 0.7%
3. Thin film growth of amorphous carbon (a-C) using camphor as a precursor and homo-junction solar cells.
・The n- and p-type conduction of a-C was obtained by the ion beam sputtering method and thermal CVD method, respectively. The n-C/p-C/p-Si cell structure was fabricated and the conversion efficiency of 2.28% was obtained.
4. Fabrication of the C60/a-C superlattice structures
・C60/a-C superlattice structures were proposed as a new solar cell material, and successfully fabricated by the intermittent supplies of nitrogen radicals during C60growth. It was suggested that the effective band gap energy could be controlled by the thickness of each layer of superlattice structure.
5. Conduction type and optical band gap energy control of a-C grown by PE-CVD for the multi-junction solar cells.
・Amorphous carbon with low spin density (1016cm-3) was synthesized by rf plasma CVD.
・Band gap energy was controlled by the nitrogen, boron or sulfur doping in a-C.
・The n- and p-type conduction of a-C was obtained by sulfur and boron doping, respectively.

10.Key Words

(1)Solar cell materials、(2)Carbon、(3)Fullerene
(4)Amorphous、(5)Semiconductor physics、(6)Thin film growth
(7)Hetero-junction structures、(8)New materials、(9)Defect properties


back