Summary of Research Project Results under JSPS FY2001
"Research for the Future Program"

1.Research Institution Tokyo Institute of Technology
2.Research Area Physical and Engineering Sciences
3.Research Field Exploratory Research on Novel Artificial Materials and Substances for Next-Generation Industries
4.Term of Project FY 1997 〜 FY 2001
5.Project Number 97P00103
6.Title of Project Functional Materials and Structures for Photonic Integrated Circuits

7.Project Leader
Name Institution,Department Title of Position
Tetsuya Mizumoto Tokyo Institute of Technology, Graduate School of Science and Engineering Associate Professor

8.Core Members

Names Institution,Department Title of Position
Yoshiaki Nakano The University of Tokyo, Graduate School of Engineering Professor
Toshihiko Baba Yokohama National University, Graduate School of Engineering Associate Professor
Hirochika Nakajima Waseda University, School of Science and Engineering Professor

9.Summary of Research Results

The objective of research project is to explore materials and structures for highly functional photonic integrated circuits. We developed a new class of selective area growth in metal-organic vapor phase epitaxy as a break-through technology for realizing semiconductor monolithic photonic integrated circuits, and demonstrated photonic functional devices that have otherwise been difficult to make, such as wavelength converters, optical isolators, and all optical switches. In order to realize the nonreciprocal function, it is requested to implement magneto-optic materials. We developed a novel technology of low-temperature wafer bonding in order to integrate magneto-optic garnets on III-V semiconductor wafers, and demonstrated the performance of novel isolator that has high compatibility of integrating with semiconductor optical active devices. Electrooptic effect and nonlinear optical effect are essentially very useful in advanced optoelectronics. However, their practical applications are unfortunately limited by their poor electrooptic or nonlinear optical constants. We spotlight LiNbO3 crystal families to obtain guiding principles enlarging these effects, and obtained 1.3 times higher electrooptic effect in a stoichiometric LiNbO3 doped with Ce ions. As for scalability of integrated photonic circuits, it is limited by the size of devices and relatively large curvature of waveguides used for connecting photonic devices. The fourth group totally studied to investigate materials and structures for a large scale photonic integration composed of ultra-small elements. The fundamental structure is a semiconductor slab sandwiched by low refractive index media so-called microdisk. We developed various techniques to fabricate and design GaInAsP/InP-based microdisk lasers as well as Si-based photonic waveguides and successfully demonstrated the evidences of these devices with high performance and characteristic.

10.Key Words

(1)photonic integrated circuit、(2)selective area growth、(3)wafer bonding
(4)microdisk、(5)optical waveguide、(6)laser diode
(7)optical isolator、(8)electrooptic effect、(9)photonic crystal