| 1.Research Institution | Tokyo Institute of Technology | |
| 2.Research Area | Physical and Engineering Sciences | |
| 3.Research Field | Exploratory Research on Novel Artificial Materials and Substances for Next-Generation Industries | |
| 4.Term of Project | FY 1997 〜 FY 2001 | |
| 5.Project Number | 97P00103 | |
| 6.Title of Project | Functional Materials and Structures for Photonic Integrated Circuits |
| Name | Institution,Department | Title of Position |
| Tetsuya Mizumoto | Tokyo Institute of Technology, Graduate School of Science and Engineering | Associate Professor |
8.Core Members
| Names | Institution,Department | Title of Position |
| Yoshiaki Nakano | The University of Tokyo, Graduate School of Engineering | Professor |
| Toshihiko Baba | Yokohama National University, Graduate School of Engineering | Associate Professor |
| Hirochika Nakajima | Waseda University, School of Science and Engineering | Professor |
9.Summary of Research Results
|
The objective of research project is to explore materials and structures for highly functional photonic integrated
circuits. We developed a new class of selective area growth in metal-organic vapor phase epitaxy as a
break-through technology for realizing semiconductor monolithic photonic integrated circuits, and demonstrated
photonic functional devices that have otherwise been difficult to make, such as wavelength converters, optical
isolators, and all optical switches. In order to realize the nonreciprocal function, it is requested to implement
magneto-optic materials. We developed a novel technology of low-temperature wafer bonding in order to
integrate magneto-optic garnets on III-V semiconductor wafers, and demonstrated the performance of novel
isolator that has high compatibility of integrating with semiconductor optical active devices. Electrooptic effect
and nonlinear optical effect are essentially very useful in advanced optoelectronics. However, their practical
applications are unfortunately limited by their poor electrooptic or nonlinear optical constants. We spotlight
LiNbO3 crystal families to obtain guiding principles enlarging these effects, and obtained 1.3 times higher
electrooptic effect in a stoichiometric LiNbO3 doped with Ce ions. As for scalability of integrated photonic
circuits, it is limited by the size of devices and relatively large curvature of waveguides used for connecting
photonic devices. The fourth group totally studied to investigate materials and structures for a large scale
photonic integration composed of ultra-small elements. The fundamental structure is a semiconductor slab
sandwiched by low refractive index media so-called microdisk. We developed various techniques to fabricate and
design GaInAsP/InP-based microdisk lasers as well as Si-based photonic waveguides and successfully
demonstrated the evidences of these devices with high performance and characteristic. |
10.Key Words
(1)photonic integrated circuit、(2)selective area growth、(3)wafer bonding
(4)microdisk、(5)optical waveguide、(6)laser diode
(7)optical isolator、(8)electrooptic effect、(9)photonic crystal