–¢—ˆŠJ‘ñŠwpŒ¤‹†„iŽ–‹ÆŒ¤‹†¬‰Ê•ñ‘ŠT

‘S’˜ŽÒ–¼	˜_•¶–¼
Noriko Akutsu, Yasuhiro Akutsu ,and Takao Yamamoto	Statistical Mechanics of Vicinal Surface with Adsorption (Invited)
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
J. Cryst. Growth	???	???	???	in press

‘S’˜ŽÒ–¼	˜_•¶–¼
Yoshihiro Kangawa, Tomonori Ito, Akihito Taguchi, Kenji Shiraishi, and Tadashi Ohachi	Empirical interatomic potential calculations for relative stability of Ga adatom on GaAs(001) and (n11)A surfaces
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
J. Cryst. Growth	???	???	???	in press

‘S’˜ŽÒ–¼	˜_•¶–¼
Yoshihiro Kangawa, Tomonori Ito, Akihito Taguchi, Kenji Shiraishi, Toshiharu Irisawa, and Tadashi Ohachi	Monte Carlo simulation for temperature dependence of Ga diffusion length on GaAs(001)
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
Appl. Surf. Sci.	???	???	???	in press

‘S’˜ŽÒ–¼	˜_•¶–¼
Yoshihiro Kangawa, Tomonori Ito, Yoshiko S. Hiraoka, Akihito Taguchi, Kenji Shiraishi, and Tadashi Ohachi	Theoretical approach to influence of As2 pressure on GaAs growth kinetics
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
Surf. Sci.	???	???	???	in press

‘S’˜ŽÒ–¼	˜_•¶–¼
Tomonori Ito, and Yoshihiro Kangawa	Theoretical investigations of thermodynamic stability for Si1-x-yGexCy
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
J. Cryst. Growth	???	???	???	in press

‘S’˜ŽÒ–¼	˜_•¶–¼
Hiroshi Nakayama, Erkin Kulatov	Growth and properties of super-doped semiconductors: Si:Mn and GaN:Mn
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
6th Int. Symposium on Advanced Physical Fields	???	???	28-32	in press

‘S’˜ŽÒ–¼	˜_•¶–¼
ˆ¢‹v’Ã “TŽq, ˆ¢‹v’Ã ‘×O, ŽR–{ —²•v	‹z’…Žq‚Ì‚ ‚é”÷ŽÎ–Ê‚Ì“Œv—ÍŠw
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
“ú–{Œ‹»¬’·Šw‰ïŽ	29	1	50-56	2002

‘S’˜ŽÒ–¼	˜_•¶–¼
Noriko Akutsu, Yasuhiro Akutsu and Takao Yamamoto	Statistical Mechanics of Vicinal Surface with Adsorption
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
Journal of the Japanese Association for Crystal Growth	29	1	50-56	2002

‘S’˜ŽÒ–¼	˜_•¶–¼
ˆÉ“¡ M	(111)B•ûŒü‚É”÷ŒXŽÎ‚µ‚½GaAs(001)•\–Êã‚É‚¨‚¯‚é•\–ÊÄ\¬\‘¢‚Æƒeƒ‰ƒX’[‚ÌŒ`ó‚Æ‚ÌŠÖŒW
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
“ú–{Œ‹»¬’·Šw‰ïŽ	29	1	65-68	2002

‘S’˜ŽÒ–¼	˜_•¶–¼
Makoto Itoh	Relation between Surface Reconstruction and the Shapes of the Terrace Edges on GaAs(001) Vicinal to (111)B
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
Journal of the Japanese Association for Crystal Growth	29	1	65-68	2002

‘S’˜ŽÒ–¼	˜_•¶–¼
Tomonori Ito, and Yoshihiro Kangawa	An empirical potential approach to wurtzite-zinc blende structural stability of semiconductors
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
J. Cryst. Growth	235	1-4	149-153	2002

‘S’˜ŽÒ–¼	˜_•¶–¼
Š¦ì‹`—T, ˆÉ“¡’q“¿, “cŒû–¾m, ”’ÎŒ«“ñ, •½‰ª‰ÀŽq, “üàVŽõ”ü, ‘å”« ’‰	GaAsƒGƒsƒ^ƒLƒVƒƒƒ‹¬’·‚É‚¨‚¯‚é‹z’…-—£’EŒ»Û‚Ö‚Ì—˜_“IƒAƒvƒ[ƒ`
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
“ú–{Œ‹»¬’·Šw‰ïŽ	29	1	57-64	2002

‘S’˜ŽÒ–¼	˜_•¶–¼
Yoshihiro Kangawa, Tomonori Ito, Akihito Taguchi, Kenji Shiraishi, Yoshiko S. Hiraoka, Toshiharu Irisawa, and Tadashi Ohachi	Ab initio-based Approach to Adsorption-Desorption Behavior during GaAs Epitaxial Growth
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
Journal of the Japanese Association for Crystal Growth	29	1	57-64	2002

‘S’˜ŽÒ–¼	˜_•¶–¼
X “ÄŽj, ”’àV ‘¾Žu, ˆäã ’¼‹v	ŒÅ‰tŠE–Ê‚Ì”ñ•½t•ªŽq“®—ÍŠwƒVƒ~ƒ…ƒŒ[ƒVƒ‡ƒ“
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
“ú–{Œ‹»¬’·Šw‰ïŽ	29	1	69-73	2002

‘S’˜ŽÒ–¼	˜_•¶–¼
Atsushi Mori, Futoshi Shirazawa and Naohisa Inoue	Non-equilibrium Molecular Dynamics Simulation of Crystal-Melt Interface
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
Journal of the Japanese Association for Crystal Growth	29	1	69-73	2002

‘S’˜ŽÒ–¼	˜_•¶–¼
A. Natori, N. Suga	In-phase step wandering on vicinal Si(111) surfaces
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
Appl.Surf.Sci.	???	???	???	2002

‘S’˜ŽÒ–¼	˜_•¶–¼
A. Natori, S. Ohnuma, N. H. Quang	Photoluminescence of charged magneto-excitons in InAs single quantum dots
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
Appl.Surf.Sci.	???	???	???	2002

‘S’˜ŽÒ–¼	˜_•¶–¼
–¼Žæ WŽq, › M˜N	Si(111)”÷ŽÎ–Ê‚Ì•\–ÊƒGƒŒƒNƒgƒƒ}ƒCƒOƒŒ[ƒVƒ‡ƒ“—U‹NƒXƒeƒbƒv\‘¢“]ˆÚ
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
“ú–{Œ‹»¬’·Šw‰ïŽ	29	1	44-49	2002

‘S’˜ŽÒ–¼	˜_•¶–¼
Akiko Natori and Nobuo Suga	Surface-electromigration-induced Step Structure Transition on Si(111) Vicinal Surfaces
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
Journal of the Japanese Association for Crystal Growth	29	1	44-49	2002

‘S’˜ŽÒ–¼	˜_•¶–¼
M. Sato, M. Uwaha and Y. Saito	Step Bunching Induced by Drift of Adatoms with Anisotropic Surface Diffusion
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
J. Cryst. Growth	237	???	???	2002

‘S’˜ŽÒ–¼	˜_•¶–¼
H. Uemura, M. Uwaha and Y. Saito	Equilibrium Shape of a Heteroepitaxial Island
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
J. Phys. Soc. Jpn.	???	???	???	2002

‘S’˜ŽÒ–¼	˜_•¶–¼
âV“¡K•vCã‘º‰p–¾, ã‰H–q•v	˜c‚ðl—¶‚µ‚½“ñŽŸŒ³’e«ŠiŽq–ÍŒ^
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
“ú–{Œ‹»¬’·Šw‰ïŽ	29	1	???	2002

‘S’˜ŽÒ–¼	˜_•¶–¼
Yukio Saito, Hideaki Uemura and Makio Uwaha	Two-Dimensional Elastic Lattice Model with Strain
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
Journal of the Japanese Association for Crystal Growth	29	1	???	2002

‘S’˜ŽÒ–¼	˜_•¶–¼
²“¡³‰p, ã‰H–q•vCâV“¡K•v	•\–ÊŠgŽU‚ÌˆÙ•û«‚Æ‹z’…Œ´Žq‚ÌƒhƒŠƒtƒg‚É‚æ‚éƒXƒeƒbƒvƒoƒ“ƒ`ƒ“ƒO•½–ÊŠE–Ê‚Ì•sˆÀ’è‰»‚Ö‚ÌŒ‹»‚ÌˆÙ•û«‚ÌŒø‰Ê
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
“ú–{Œ‹»¬’·Šw‰ïŽ	29	1	???	2002

‘S’˜ŽÒ–¼	˜_•¶–¼
Masahide Sato, Makio Uwaha and Yukio Saito	Effect of Crystal Anisotropy on Instabilities of Flat Interfaces
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
Journal of the Japanese Association for Crystal Growth	29	1	???	2002

‘S’˜ŽÒ–¼	˜_•¶–¼
ã‰H–q•vC²“¡³‰p	‹z’…Œ´Žq‚Ì—¬‚ê‚É‚æ‚éƒXƒeƒbƒv‚Ìƒoƒ“ƒ`ƒ“ƒO‚ÆŽÖs‚Ì—˜_‚É‚Â‚¢‚Ä
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
^‹ó(“ú–{^‹ó‹¦‰ï‹@ŠÖŽ)	45	???	???	2002

‘S’˜ŽÒ–¼	˜_•¶–¼
Makio Uwaha and Masahide Sato	Step bunching Induced by the Drift of Adatoms
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
Vacuum (Journal of The Vacuum Society of Japan)	45	???	???	2002

‘S’˜ŽÒ–¼	˜_•¶–¼
ã‰H–q•v	”÷Œ‹»Œ`‚ÌŠÉ˜a‚Ìƒ_ƒCƒiƒ~ƒNƒX--•½tŒ`‚ÌŽÀŒ»‚Æ“‡‚Ì•ö‰ó
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
•\–Ê‰ÈŠw(“ú–{•\–Ê‰ÈŠw‰ïŽ)	23	2	88-94	2002

‘S’˜ŽÒ–¼	˜_•¶–¼
Makio Uwaha	Step bunching Induced by the Drift of Adatoms
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
Journal of The Surface Science Society of Japan	23	2	88-94	2002

‘S’˜ŽÒ–¼	˜_•¶–¼
A. Miyagawa, T.Yamamoto, J.T.Nelson,and T.Ohachi	Silicon Doping into MBE Grown GaAs at High Arsenic Vapor Pressures
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
J. Crystal Growth	237-239	???	1434-1439	2002

‘S’˜ŽÒ–¼	˜_•¶–¼
R. Flauta, T. Kasuya, T. Ohachi and M. Wada	Plasma characteristics of a multi cusp plasma sputter type ion source for thin film formation of gallium nitride
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
J. Crystal Growth	237-239	???	2116-2120	2002

‘S’˜ŽÒ–¼	˜_•¶–¼
N. Harima, J.T. Nelson, and T. Ohachi	Characterization of MBE Grown GaAs/AlGaAs Heterointerfaces with Photo Luminescence from Quantum Wells
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
J. Crystal Growth	237-239	???	274-277	2002

‘S’˜ŽÒ–¼	˜_•¶–¼
D“cLˆêC‘å”«’‰	GaAsŒnMBE¬’·‚Å‚Ì‚Asˆ³ðŒ‚É‚¨‚¯‚éŠî”ÂãAs ‹z’…‘w‚ÌŒv‘ª
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
“¯ŽuŽÐ‘åŠw—HŠwŒ¤‹†•ñ	43	1	53-58	2002

‘S’˜ŽÒ–¼	˜_•¶–¼
S. Kohda and T. Ohachi	Measurement of an Adsorbed As Overlayer an a GaAs Substrby MBE Growth unde High As Pressure
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
The Sci. Eng. Rev. Doshisha Univ.	43	1	53-58	2002

‘S’˜ŽÒ–¼	˜_•¶–¼
Y.Yamanaka, H.Harada, K.Tanahasi, T.Mikayama, and N.Inoue	Infrared absorption analysis of nitrogen in Czochralski silicon
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
Solid State Phenomena	82-84	???	63-68	2002

‘S’˜ŽÒ–¼	˜_•¶–¼
Minya Ma, Toshihirau Irisawa, Tomoya Ogawa, Xinming Huang, Toshinori Taishi, and Keigo Hoshikawa	Relationship between characteristics of defects in CZ-Si crystals and V/G ratios by multi-chroic infrared light scattering tomography
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
J. Crystal. Growth	234	2-3	296-304	2002

‘S’˜ŽÒ–¼	˜_•¶–¼
S. Ibuka and M. Tajima	Temporal decay measurement of condensate luminescence and its application to characterization of silicon-on-insulator wafers
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
J. Appl. Phys.	91	9	???	2002

‘S’˜ŽÒ–¼	˜_•¶–¼
Takayoshi Shimura, Takuji Hosoi, Kazunori Fukuda, Masataka Umeno, and Atsushi Ogura	Formation of Epitaxially Ordered SiO2 in Oxygen-implanted Silicon during Thermal Annealing
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
J. Cryst. Growth	236	???	37-40	2002

‘S’˜ŽÒ–¼	˜_•¶–¼
Tetsuya Ikuta, Yoshifumi Yoshioka, Satoshi Kamei, Hiroyuki Hayashi, Takayoshi Shimura, and Masataka Umeno	In situ Ellipsometric Measurement during Growth of Ge on Si(111) by Molecular Beam Epitaxy
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
Jpn. J. Appl. Phys.	41	4A	???	2002

‘S’˜ŽÒ–¼	˜_•¶–¼
Noriko Akutsu, Yasuhiro Akutsu ,and Takao Yamamoto	Vicinal surface with Langmuir adsorption: A decorated restricted solid-on-solid model
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
Phys. Rev. B	64	8	085415-(1)-08415-(9)	2001

‘S’˜ŽÒ–¼	˜_•¶–¼
K. Okunishi, Y. Akutsu, N. Akutsu, and T. Yamamoto	Universal relation between the dispersion curve and the ground-state correlation length in one-dimensional antiferromagnetic quantum spin systems
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
Phys. Rev. B	64	10	104432-(1)-104432-(5	2001

‘S’˜ŽÒ–¼	˜_•¶–¼
N. Akutsu and Y. Akutsu	Trimer-Monomer Mixture Problem on (111) 1x1 Surface of Diamond Structure
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
Prog. Theor. Phys.	105	1	123-130	2001

‘S’˜ŽÒ–¼	˜_•¶–¼
K. Tanahashi, N. Inoue, and N. Akutsu	Equilibrium point defect concentration in a growing silicon crystal
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
Microelectronic Engineering	56	???	133-137	2001

‘S’˜ŽÒ–¼	˜_•¶–¼
Noriko Akutsu, Yasuhiro Akutsu ,and Takao Yamamoto	Stiffening Transition in Vicinal Surfaces with Adsorption
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
Prog. Theor. Phys.	105	2	361-366	2001

‘S’˜ŽÒ–¼	˜_•¶–¼
Noriko Akutsu, Yasuhiro Akutsu ,and Takao Yamamoto	Statistical Mechanics of the Vicinal Surfaces with Adsorption
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
Surf. Sci.	493	1-3	475-479	2001

‘S’˜ŽÒ–¼	˜_•¶–¼
Makoto Itoh	Kinetic Monte Carlo study of step asymmetry and stable step orientations on GaAs(001)
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
Phys. Rev. B	64	???	045301(1)-045301(6)	2001

‘S’˜ŽÒ–¼	˜_•¶–¼
Makoto Itoh and Takahisa Ohno	Atomic-scale Monte Carlo study of step-flow growth modes on GaAs(001)-(2x4)
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
Phys. Rev. B	63	???	125301(1)-125301(11)	2001

‘S’˜ŽÒ–¼	˜_•¶–¼
Makoto Itoh and Takahisa Ohno	Atomic-scale Monte Carlo study of GaAs(001)-(2x4) growth on vicinal surfaces
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
Surf. Sci	493	???	430-437	2001

‘S’˜ŽÒ–¼	˜_•¶–¼
Makoto Itoh	Atomic-scale homoepitaxial growth simulations of reconstructed III-V surfaces
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
Prog. Surf. Sci.	66	???	53-153	2001

‘S’˜ŽÒ–¼	˜_•¶–¼
ˆÉ“¡@M	GaAs(001)ƒGƒsƒ^ƒLƒVƒƒƒ‹¬’·‚ÌŒ´ŽqƒXƒP[ƒ‹EƒVƒ~ƒ…ƒŒ[ƒVƒ‡ƒ“
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
ŒÅ‘Ì•¨—	36	???	420-434	2001

‘S’˜ŽÒ–¼	˜_•¶–¼
Makoto Itoh	Atomic-scale simulation of epitaxial growth on GaAs(001)
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
Kotai Butsuri	36	???	420-434	2001

‘S’˜ŽÒ–¼	˜_•¶–¼
Yoshihiro Kangawa, Koji Wakizono, Noriyuki Kuwano, Kensuke Oki, and Tomonori Ito	Formation mechanism of Al-segregated region in InAlAs/(110)InP
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
J. Cryst. Growth	229	1-4	164-168	2001

‘S’˜ŽÒ–¼	˜_•¶–¼
Akihito Taguchi, Kenji Shiraishi, Tomonori Ito, and Yoshihiro Kangawa	Theoretical investigations of adatom adsorption on the As-stabilized GaAs(111)A surface
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
Surf. Sci.	493	1-3	173-177	2001

‘S’˜ŽÒ–¼	˜_•¶–¼
Yoshihiro Kangawa, Tomonori Ito, Akihito Taguchi, Kenji Shiraishi, and Tadashi Ohachi	A new theoretical approach to adsorption-desorption behavior of Ga on GaAs surface
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
Surf. Sci.	493	1-3	178-181	2001

‘S’˜ŽÒ–¼	˜_•¶–¼
A.Natori, S.Ohnuma, N.H.Quang	Charged magnetoexcitons in parabolic quantum dots II
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
Jpn.J.Appl.Phys.	40	???	1951-1954	2001

‘S’˜ŽÒ–¼	˜_•¶–¼
A.Natori, H.Harada, Nan-Jian Wu, H.Yasunaga	Strain effect on surface melting of Si(111)
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
Surf.Sci.	169-170	???	20-24	2001

‘S’˜ŽÒ–¼	˜_•¶–¼
M. Osanai, H. Yasunaga, A.Natori	Dimer buckling dynamics in the vicinity of missing dimers on Si(100) surfaces
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
Surf.Sci.	493	???	319-324	2001

‘S’˜ŽÒ–¼	˜_•¶–¼
M. Murayama, T. Nakayama, A. Natori	Au-Si bonding on Si(111) surfaces
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
Jpn.J.Appl.Phys.	40	12	6976-6979	2001

‘S’˜ŽÒ–¼	˜_•¶–¼
M. Murayama, T. Nakayama, A. Natori	Electronic structure of ã3~ã3-Au/Si(111) surfaces
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
Surf.Sci.	493	???	626-632	2001

‘S’˜ŽÒ–¼	˜_•¶–¼
Y. Saito, H. Uemura and M. Uwaha	Two-Dimensional Elastic Lattice Model with Spontaneous Stress
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
Phys. Rev. B	63	1	045422-1-045422-9	2001

‘S’˜ŽÒ–¼	˜_•¶–¼
Y. Homma, P. Finnie and M. Uwaha	Morphological Instability of Atomic Steps Observed on Si(111) Surfaces
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
Surf. Sci.	492	1-2	125-136	2001

‘S’˜ŽÒ–¼	˜_•¶–¼
K. Thuermer, J. E. Reutt-Robey, E. D. Williams, M. Uwaha, A. Emundts and H. P. Bonzel	Step Dynamics in 3D Crystal Shape Relaxation
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
Phys. Rev. Lett.	87	18	186102-1-186102-4	2001

‘S’˜ŽÒ–¼	˜_•¶–¼
A. Ichimiya, K. Hayashi, E. D. Williams, T. L. Einstein, M. Uwaha and K. Watanabe	Decay of Silicon Mounds: Scaling Laws and Description with Continuum Step Parameters
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
Appl. Surf. Sci.	175/176	???	33-35	2001

‘S’˜ŽÒ–¼	˜_•¶–¼
M. Sato, M. Uwaha and Y. Saito	Growth of Permeable Step Bunches Formed by Drift of Adatoms
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
Surf. Sci.	493	1-3	480-486	2001

‘S’˜ŽÒ–¼	˜_•¶–¼
M. Sato and M. Uwaha	Growth Law of Step Bunches Induced by the Ehrlich-Schwoebel Effect in Growth
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
Surf. Sci.	493	1-3	494-498	2001

‘S’˜ŽÒ–¼	˜_•¶–¼
H. Uemura, Y. Saito and M. Uwaha	Elastic Interaction in a Two-Dimensional Discrete Lattice Model
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
J. Phys. Soc. Jpn.	70	3	743-752	2001

‘S’˜ŽÒ–¼	˜_•¶–¼
Takao Yamamoto	Harmonically-Interacting Step Approach to the Relaxation Prosess of Vicinal Surface. III. Universal Relations
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
J. Phys. Soc. Jpn.	70	9	2542-2549	2001

‘S’˜ŽÒ–¼	˜_•¶–¼
T. Yamamoto, Y. Akutsu and N. Akutsu	Position Distribution of Steps on Vicinal Surface and Surface Stiffness
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
J. Cryst. Growth	229	???	619-624	2001

‘S’˜ŽÒ–¼	˜_•¶–¼
Yoshinori Furukawa, Etsuro Yokoyama	Ice crystal pattern formation under gravity and microgravity conditions
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
Proceedings of the first international Symposium o Microgravity Research & Applications in Physical Science & Biotechnology	???	???	465-471	2001

‘S’˜ŽÒ–¼	˜_•¶–¼
Y. Kumagai, K. Takemoto, A. Koukitu and H. Seki	Thermodynamics on halide vapor-phase epitaxy of InN using InCl and InCl3
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
J. Cryst. Growth	222	???	118-124	2001

‘S’˜ŽÒ–¼	˜_•¶–¼
M. Mayumi, F. Satoh, Y. Kumagai, K. Takemoto and A. Koukitu	Influence of Polarity on Surface Reaction between GaN{0001} and Hydrogen
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
Phys. Stat. Sol. (b)	228	2	537-541	2001

‘S’˜ŽÒ–¼	˜_•¶–¼
Y. Kumagai, H. Murakami, H. Seki and A. Koukitu	Comparison of GaN Buffer Layers Grown on GaAs (111)A and (111)B Surfaces
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
Phys. Stat. Sol. (a)	188	2	549-552	2001

‘S’˜ŽÒ–¼	˜_•¶–¼
T. Mitate, Y. Sonoda, K. Oki, N. Kuwano, Y. Kumagai, H. Murakami and A. Koukitu	Transmission Electron Microscope Analysis of Microstructures in GaN Grown on (111)A and (111)B of GaAs by Metalorganic Hydrogen Chloride Vapor-Phase Epitaxy
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
Phys. Stat. Sol. (a)	188	2	553-556	2001

‘S’˜ŽÒ–¼	˜_•¶–¼
Y. Matsuo, Y. Kumagai, T. Irisawa and A. Koukitu	Ab initio Calculations of GaN Initial Growth Processes on GaAs(111)A and GaAs(111)B Surfaces
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
Phys. Stat. Sol. (a)	188	2	553-560	2001

‘S’˜ŽÒ–¼	˜_•¶–¼
Y. Kumagai, K. Takemoto, T. Hasegawa, A. Koukitu and H. Seki	Thermodynamics on tri-halide vapor-phase epitaxy of GaN and InxGa1-xN using GaCl3 and InCl3
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
J. Cryst. Growth	231	???	57-67	2001

‘S’˜ŽÒ–¼	˜_•¶–¼
A. Koukitu and Y. Kumagai	Thermodynamic analysis of group III nitrides grown by metal-organic vapour-phase epitaxy (MOVPE), hydride (or halide) vapour-phase epitaxy (HVPE) and molecular beam epitaxy (MBE)
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
J. Phys.: Condens. Matter	13	???	6907-6934	2001

‘S’˜ŽÒ–¼	˜_•¶–¼
K. Motoki, T. Okahisa, N. Matsumoto, M. Matsushima, H. Kimura, H. Kasai, K. Takemoto, K. Uematsu, T. Hirano, M. Nakayama, S. Nakahata, M. Ueno, D. Hara, Y. Kumagai, A. Koukitu and H. Seki	Preparation of Large Freestanding GaN Substrates by Hydride Vapor Phase Epitaxy Using GaAs as a Starting Substrate
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
Jpn. J. Appl. Phys.	40	2B	L140-L143	2001

‘S’˜ŽÒ–¼	˜_•¶–¼
M. Mayumi, F. Satoh, Y. Kumagai and A. Koukitu	In Situ Gravimetric Monitoring of Decomposition Rate from GaN (0001) and (000-1) Surfaces Using Freestanding GaN
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
Jpn. J. Appl. Phys.	40	7A	L654-L656	2001

‘S’˜ŽÒ–¼	˜_•¶–¼
E. Kulatov, H. Nakayama and H. Ohta	Electronic and Optical Properties of ƒ¿-,ƒÀ-, and ƒÁ-FeSi2
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
J. Phys. Soc. Japan	70	7	2199-2204	2001

‘S’˜ŽÒ–¼	˜_•¶–¼
H. Nakayama, H. Ohta and E. Kulatov	Photo-Thermal Excitation Gas-Source MBE Growth of Super-Doped Si:Mn for Spin-Photonics Applications
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
Thin Solid Films	395	???	230-234	2001

‘S’˜ŽÒ–¼	˜_•¶–¼
H. Nakayama, H. Ohta and E. Kulatov	Growth and Properties of Super-Doped Si:Mn for Spin-Photonics
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
Physica B	???	302-303	419-424	2001

‘S’˜ŽÒ–¼	˜_•¶–¼
H. Ohta, S. Ohkubo, J. Yoshikawa, Y. Nakashima, C. Urakawa, H. Nakayama and T. Nishino	High Field Cyclotron Resonance Measurements of Heavily Doped Si:Mn
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
Physica B	298	???	449-452	2001

‘S’˜ŽÒ–¼	˜_•¶–¼
T. OhachiCM.Inada, K. Asai, and J. M. Feng	Arsenic pressure dependence of Hillock morphology on GaAs(n11)A substrates grown using MBE
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
J. Crystal Growth	227/227	???	67-71	2001

‘S’˜ŽÒ–¼	˜_•¶–¼
A.Natsume,K..Tanahasi,N.Inoue	Relation between temperature gradient at growth interface and growth rate in Czochralski silicon examined by heat balance equation
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
Microelectronic Engineering	56	???	129-132	2001

‘S’˜ŽÒ–¼	˜_•¶–¼
A.Natume, N.Inoue, K.Tanahasi, A.Mori	Dependence of temperature gradient on growth rate in CZ silicon
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
Journal of Crystal Growth	225	???	221-224	2001

‘S’˜ŽÒ–¼	˜_•¶–¼
H. Harada , I.Ohkubo, T. Mikayama Y.Yamanaka, N. Inoue	Valence force field analysis on nitrogen in silicon
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
Physica B	308-310	???	224-247	2001

‘S’˜ŽÒ–¼	˜_•¶–¼
K. Tanahasi, H. Harada, A. Koukitsu and N. Inoue	Modeling of point defect behavior by the stress due to impurity doping in growing silicon
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
Journal of Crystal Growth	225	???	294-298	2001

‘S’˜ŽÒ–¼	˜_•¶–¼
H.Harada, Y.Matsuo, K.Tanahasi,A.Koukitsu, N.Inoue, K.Wada	Effect of stress by dopants and nitrogen on grown-in defects in silicon
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
Physica B	302-303	???	386-392	2001

‘S’˜ŽÒ–¼	˜_•¶–¼
K.Tanahasi, N.Inoue, Y.Mizokawa	Equilibrium concentration of vacancies under the anisotropic stress field around impurity
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
Physica B	308-310	???	502-505	2001

‘S’˜ŽÒ–¼	˜_•¶–¼
Minya Ma, Toshiharu Irisawa, Tomoya Ogawa, and Cesare Frigeri	Study of the characteristics of defects in the oxidation-induced stacking fault-ring area in Czochralski silicon crystals by multi-chroic infrared scattering tomography and transmission electron microscopy
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
Jpn. J. Appl. Phys.	40	1-6A	4149-4152	2001

‘S’˜ŽÒ–¼	˜_•¶–¼
Minya Ma, Toshiharu Irisawa, Tomoya Ogawa, and Cesare Frigeri	Study of inhomogeneous radial distribution of defects in as-grown and annealed Czochralski silicon crystals by multi chroic infrared light scattering tomography
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
Jpn. J. Appl. Phys.	40	1-6A	4153-4159	2001

‘S’˜ŽÒ–¼	˜_•¶–¼
K. Sakai and T. Ogawa,	Determination of tiny scatterer's shape by light scattering tomography
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
Opt. Rev.	8	???	148-151	2001

‘S’˜ŽÒ–¼	˜_•¶–¼
C. Frigeri, M. Ma, T. Irisawa and T. Ogawa,	MC-IR-LST and TEM combined analysis of defects in the OSF ring of Cz-silicon crystals,
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
Solid State Phenomena	78-79	???	211-216	2001

‘S’˜ŽÒ–¼	˜_•¶–¼
Junyong Kang and Tomoya Ogawa,	Threading dislocations with edge component in GaN epilayers grown on Al2O3 substrates
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
J. Mater. Res.	16	???	2550-2555	2001

‘S’˜ŽÒ–¼	˜_•¶–¼
J. Takiguchi, M. Tajima, A. Ogura, S. Ibuka, and Y. Tokumaru	Photoluminescence analysis of {311} Interstitial defects in wafers synthesized by separation by Implanted oxygen
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
Jpn. J. Appl. Phys.	40	6A	L567-L569	2001

‘S’˜ŽÒ–¼	˜_•¶–¼
Yoshifumi Yoshioka, Tetsuya Ikuta, Toshiya Taji, Kozoh Mizobata, Takayoshi Shimura, and Masataka Umeno	Monitoring of Si Molecular-Beam Epitaxial Growth by an Ellipsometric Method
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
Jpn. J. Appl. Phys.	40	1	371-375	2001

‘S’˜ŽÒ–¼	˜_•¶–¼
“üàVŽõ”üA¼–{ŠìˆÈŽqA—L”n‹`N	Œ‹»¬’·•\–Ê‚Ì“®“I‹““®‚ÆŒ´ŽqƒXƒP[ƒ‹ƒVƒ~ƒ…ƒŒ[ƒVƒ‡ƒ“
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
‰ž—p•¨—	69	10	1181-1186	2000

‘S’˜ŽÒ–¼	˜_•¶–¼
T.Irisawa, K.Matsumoto,Y.Arima	Dynamic behavior of grown Crystal Surface and atomic scale simulation
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
Journal of the Japan Society of Applied Physics	69	10	1181-1186	2000

‘S’˜ŽÒ–¼	˜_•¶–¼
Makoto Itoh	Comment on "Local dimer-adatom stacking fault structures from 3x3 to 13x13 along Si(111)-7x7 domain boundaries"
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
???	62	???	2236	2000

‘S’˜ŽÒ–¼	˜_•¶–¼
Makot Itoh and Takahisa Ohno	Absence of a step-edge barrier on a polar semiconductor surface with reconstruction
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
Phys. Rev. B	62	???	1889-1896	2000

‘S’˜ŽÒ–¼	˜_•¶–¼
Makot Itoh and Takahisa Ohno	Relevance of surface reconstruction to specular RHEED intensity on GaAs(001)
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
Phys. Rev. B	62	???	7219-7228	2000

‘S’˜ŽÒ–¼	˜_•¶–¼
ˆÉ“¡@M	Si(111)•\–Ê7x7\‘¢‚ÌŒ`¬‰ß’ö
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
•¨—Šw‰ïŽ	55	???	951-955	2000

‘S’˜ŽÒ–¼	˜_•¶–¼
Makoto Itoh	Formation process of the 7x7 structure on Si(111)
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
???	55	???	951-955	2000

‘S’˜ŽÒ–¼	˜_•¶–¼
Yoshihiro Kangawa, Tomonori Ito, Atsushi Mori, and Akinori Koukitu	Anomalous behavior of excess energy curves of InxGa1-xN grown on GaN and InN
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
J. Cryst. Growth	220	4	401-404	2000

‘S’˜ŽÒ–¼	˜_•¶–¼
Igor L. Maksimov, Masaki Sanada, and Kazumi Nishioka	Energy barrier effect on the transient nucleation kinetics: nucleation flux and lag-time calculation
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
J. Chem. Phys.	113	8	3323-3331	2000

‘S’˜ŽÒ–¼	˜_•¶–¼
N.H.Quang, S.Ohnuma, A.Natori	Charged magnetoexcitons in parabolic quantum dots
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
Phys. Rev. B	62	???	12955-12962	2000

‘S’˜ŽÒ–¼	˜_•¶–¼
Y.Ishimaru, Nan-Jian Wu, H.Yasunaga, A.Natori	Frustrated nanodomains on O/Cu(100)
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
Jpn.J.Appl.Phys.	39	???	4417-4420	2000

‘S’˜ŽÒ–¼	˜_•¶–¼
M.Murayama, T.Nakayama, A.Natori	Electronic structures and the charge transfer of Au overlayer on Si(111) surfaces
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
Appl.Surf.Sci.	159-160	???	45-49	2000

‘S’˜ŽÒ–¼	˜_•¶–¼
T.Kawabe, A.Natori	Ordering dynamics of anisotropic missing dimer clusters on Si(001) surfaces
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
Surf.Sci.	462	???	181-186	2000

‘S’˜ŽÒ–¼	˜_•¶–¼
N.Suga, J.Kinpara, Nan-Jian Wu, H.Yasunaga, A.Natori	Novel transition mechanism of surface electromigration induced step structure on vicinal Si(111) surfaces
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
Jpn.J.Appl.Phys.	39	???	4412-4416	2000

‘S’˜ŽÒ–¼	˜_•¶–¼
A. Ichimiya, K. Hayashi, E. D. Williams, T. L. Einstein, M. Uwaha and K. Watanabe	Decay of Silicon Mounds: Scaling Laws and Description with Continuum Step Parameters
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
Phys. Rev. Lett.	84	16	3662-3665	2000

‘S’˜ŽÒ–¼	˜_•¶–¼
M. Uwaha and K. Watanabe	Decay of an Island on a Facet via Surface Diffusion
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
J. Phys. Soc. Jpn.	69	2	497-503	2000

‘S’˜ŽÒ–¼	˜_•¶–¼
M. Sato, M. Uwaha and Y. Saito	Instabilities of Permeable Steps Induced by the Drift of Adatoms
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
Surf. Rev. Lett.	7	5-6	607-611	2000

‘S’˜ŽÒ–¼	˜_•¶–¼
Y. Saito	Harmonic Solid-on-Solid Model of Heteroepitaxial Growth
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
J. Phys. Soc. Jpn.	69	3	734-743	2000

‘S’˜ŽÒ–¼	˜_•¶–¼
M. Sato, M. Uwaha and Y. Saito	Instabilities of Steps Induced by the Drift of Adatoms and Effect of the Step Permeability
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
Phys. Rev. B	62	12	8452-8472	2000

‘S’˜ŽÒ–¼	˜_•¶–¼
Takao Yamamoto and Yo-ich Kawashima	Non-Crossing Effect on Long Wave-Length Fluctuation of Multilayer Membrane System
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
J. Phys. Soc. Jpn.	69	9	2715-2718	2000

‘S’˜ŽÒ–¼	˜_•¶–¼
Norikazu Ishimura and Takao Yamamoto	A Surface Effect on a One-Dimensional Competitive System: Free Domain-Wall Structures Induced by a Free-Surface
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
J. Phys. Soc. Jpn.	69	2	489-496	2000

‘S’˜ŽÒ–¼	˜_•¶–¼
Yo-ich Kawashima and Takao Yamamoto	Entropy Loss Induced by the Non-Crossing Nature in Multilayer-Membrane System
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
Transactions of the Materials Research Society of Japan	25	3	759-761	2000

‘S’˜ŽÒ–¼	˜_•¶–¼
Etsuro Yokoyama, Robert F. Sekerka and Yoshinori Furukawa	Growth trajectories of disk crystals of ice growing from supercooled water
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
J. Phys. Chem. B	104	???	65-67	2000

‘S’˜ŽÒ–¼	˜_•¶–¼
A. Koukitu, Y. Kumagai and H. Seki	Thermodynamic Analysis of the MOVPE Growth of InAlN
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
Phys. Stat. Sol.(a)	180	???	115-120	2000

‘S’˜ŽÒ–¼	˜_•¶–¼
Y. Kangawa, T. Ito, A. Mori and A. Koukitu	Anomalous Behavior of Excess Energy Curves of InxGa1-xN Grown on GaN and InN
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
J. Cryst. Growth	220	???	401-405	2000

‘S’˜ŽÒ–¼	˜_•¶–¼
Y. Kumagai, M. Mayumi, A. Koukitu and H. Seki	In situ gravimetric monitoring of halogen transport atomic layer epitaxy of cubic-GaN
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
Appl. Surf. Sci.	159/160	???	427-431	2000

‘S’˜ŽÒ–¼	˜_•¶–¼
Y. Matsuo, M. Nimura, A. Koukitu, Y. Kumagai, H. Seki, S. Takami, M. Kubo and A. Miyamoto	Investigation of Hydrogen Chemisorption on GaAs (111)A Ga Surface by In Situ Monitoring Method and Ab Initio Calculation
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
Jpn. J. Appl. Phys.	39	11	6174-6179	2000

‘S’˜ŽÒ–¼	˜_•¶–¼
Y. Kumagai, H. Murakami, A. Koukitu, K. Takemoto and H. Seki	Growth of Thick Hexagonal GaN Layer on GaAs (111)A Surfaces for Freestanding GaN by Metalorganic Hydrogen Chloride Vapor Phase Epitaxy
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
Jpn. J. Appl. Phys.	39	7B	703-706	2000

‘S’˜ŽÒ–¼	˜_•¶–¼
M. Mayumi, F. Satoh, Y. Kumagai, K. Takemoto and A. Koukitu	In Situ Gravimetric Monitoring of Decomposition Rate from GaN Epitaxial Surface
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
Jpn. J. Appl. Phys	39	7B	707-709	2000

‘S’˜ŽÒ–¼	˜_•¶–¼
A. Koukitu, Y. Kumagai and H. Seki	Thermodynamic analysis of the MOVPE growth of InGaAlN quaternary alloy
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
J. Cryst. Growth	221	???	743-750	2000

‘S’˜ŽÒ–¼	˜_•¶–¼
Y. Kumagai, A. Koukitu and H. Seki	Investigation of Substrate Orientation Dependence for the Growth of GaN on GaAs (111)A and (111)B Surfaces by Metalorganic Hydrogen Chloride Vapor-Phase Epitaxy
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
Jpn. J. Appl. Phys.	39	2B	L149-L151	2000

‘S’˜ŽÒ–¼	˜_•¶–¼
S. Abe, H. Nakayama, T. Nishino, H. Ohta and S. Iida	Subtracted Auger Electron Spectra of Heavily Doped Transition Metal Impurities in Si
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
J. Cryst. Growth.	210	???	137-142	2000

‘S’˜ŽÒ–¼	˜_•¶–¼
H. Yanagi, D. Schlettwein, H. Nakayama and T. Nishino	Site-specific physisorption and chemical reaction of subphthalocyanine molecules on Si(111)-(7x7)
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
Phys. Rev. B	61	3	1959-1964	2000

‘S’˜ŽÒ–¼	˜_•¶–¼
H. Nakayama, T. Morishita, T. Ekaitsu and T. Nishino	Monte-Carlo Master Equation Mehtod for a Simulation of Epitaxial Growth Dynamics
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
Appl. Surf. Sci.	159-160	???	380-386	2000

‘S’˜ŽÒ–¼	˜_•¶–¼
A. Shimizu, S. Abe, H. Nakayama, T. Nishino and S. Iida	Structural Evolution and Valence Electron States Change during Ultra Thin Silicon Oxide Growth
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
App. Surf. Sci.	159-160	???	89-97	2000

‘S’˜ŽÒ–¼	˜_•¶–¼
K. Asai, J. M. Feng , P.O. Vacaro, K.Fujita and T. Ohachi	Possibility of Quasi Liquid Layer of As on GaAs Substrate Grown by MBE Observed by Enhancement of Ga Desorption at High As Pressure,
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
Appl. Surf. Sci.	159-160	???	301-307	2000

‘S’˜ŽÒ–¼	˜_•¶–¼
T. Ohachi, J. M. Feng and K. Asai	Arsenic Pressure Dependence of Ga Desorption from MBE High Index GaAs Substrates
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
J. Crystal Growth	211	???	405-410	2000

‘S’˜ŽÒ–¼	˜_•¶–¼
J. M. Feng , K. Asai, Y. Narukawa, Y. Kawakami, S.Fujita and T. Ohachi	Orientation Effect on Intersubband Tunneling of Quantum Wells Grown on High Index GaAs (N11)A(N>=4) Substrates
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
Appl. Surf. Sci.	159-160	???	532-539	2000

‘S’˜ŽÒ–¼	˜_•¶–¼
K.Tanahashi ,M.Kikuchi, T.Higashino, N.Inoue and Y.Mizokawa	Concentration of point defects changed by thermal stress in growing CZ silicon crystal: effect of the growth rate
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
Journal of Crystal Growth	210	???	45-48	2000

‘S’˜ŽÒ–¼	˜_•¶–¼
N. Inoue	Grown-in defects in Czochralski silicon (Invited)
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
Recent Res. Devel. Crystal Growth	2	???	83-122	2000

‘S’˜ŽÒ–¼	˜_•¶–¼
“Œ–ì“kŽm”VC ’I‹´ŽlC ˆäã’¼‹vCX“ÄŽj	ƒVƒŠƒRƒ“¬’·‚É‚¨‚¯‚éŒÅ‰tŠE–Ê‚Ì‰·“xŒù”z‚Æ”Mƒoƒ‰ƒ“ƒX
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
^‹ó	42	3	349-352	2000

‘S’˜ŽÒ–¼	˜_•¶–¼
T.Higashino, K.Tanahashi, N.Inoue, A.Mori	Dependence of temperature gradient and heat balance in CZ silicon
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
Vacuum (Journal of The Vacuum Society of Japan)	42	3	349-352	2000

‘S’˜ŽÒ–¼	˜_•¶–¼
Minya Ma, Toshiharu Irisawa, Toshihide Tsuru, Tomoya Ogawa, Masahito Watanabe, and Minoru Eguchi	Study on defects in CZ-Si crystals grown by normal, cusp magnetic field and electromagnetic field techniques using multi-chroic infrared light scattering tomography
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
J. Cryst. Growth	218	2-4	232-238	2000

‘S’˜ŽÒ–¼	˜_•¶–¼
Minya Ma, Nobuhide Nango, Tomoya Ogawa, Masahito Watanabe, and Minoru Eguchi	Study on defects in EMCZ-Si crystal by infrared light scattering tomography
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
J. Cryst. Growth	208	1-4	282-288	2000

‘S’˜ŽÒ–¼	˜_•¶–¼
Toshihide Tsuru, Kazufumi Sakai, Minya Ma, and Tomoya Ogawa	Measurement of stress near dislocation walls in a ZnSe single crystal by Raman scattering tomography
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
Jpn. J. Appl. Phys.	39	1-10	5977-5980	2000

‘S’˜ŽÒ–¼	˜_•¶–¼
J. Kang and T. Ogawa,	Lattice images of dislocations with edge components in GaN epilayers grown on Al2O3 substrates,
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
J. of Crystal Growth	210	???	157-161	2000

‘S’˜ŽÒ–¼	˜_•¶–¼
Y. Yukawa, T. Tsuru. K. Sakai and T. Ogawa,	Relation between light scattered intensity and Raman shift in neighborhood of dislocation walls in ZnSe crystals
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
J. of Crystal Growth	210	???	234-237	2000

‘S’˜ŽÒ–¼	˜_•¶–¼
T. Tsuru and T. Ogawa	Defects in flux and Czochralski grown BaB2O4 crystals observed by light scattering tomography,
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
J. of Crystal Growth	216	???	352-358	2000

‘S’˜ŽÒ–¼	˜_•¶–¼
T. Tsuru, K. Sakai, M. Ma and T. Ogawa,	Measurement of stress near dislocation walls in a ZnSe single crystal by Raman scattering tomography,
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
Jpn. J. Appl. Phys.,	39	???	5977-5980	2000

‘S’˜ŽÒ–¼	˜_•¶–¼
S. Ibuka and M. Tajima	Characterization of silicon-on-insulator wafers by photoluminescence decay lifetime measurement
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
Jpn. J. Appl. Phys. (Express Letter)	39	11B	L1124-L1126	2000

‘S’˜ŽÒ–¼	˜_•¶–¼
Takayoshi Shimura, Takuji Hosoi, and Masataka Umeno	Characterization of SOI Wafers by X-ray CTR Scattering
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
J. Cryst. Growth	210	???	98-101	2000

‘S’˜ŽÒ–¼	˜_•¶–¼
Noriko Akutsu and Yasuhiro Akutsu	Statistical mechanical calculation of anisotropic step stiffness of a two-dimensional hexagonal lattice-gas model with next-nearest-neighbour interactions: application to Si(111) surface
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
J. Phys.: Condens. Matter	11	???	6635-6652	1999

‘S’˜ŽÒ–¼	˜_•¶–¼
“üàVŽõ”üA¼–{ŠìˆÈŽqA—L”n‹`N	‚Q¬•ªŒnA-BŒ^Œ‹»‚Ì‚QŽŸŒ³ŠjŒ`¬‰ß’öƒVƒ~ƒ…ƒŒ[ƒVƒ‡ƒ“
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
“ú–{Œ‹»¬’·Šw‰ïŽ	26	1	24-30	1999

‘S’˜ŽÒ–¼	˜_•¶–¼
T. Irisawa, K. Matsumoto, Y. Arima	Monte Carlo simulation of two-dimensional nucleation process of stoichiometric A-B crystal
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
Journal of the Japanese association for crystal growth	26	1	24-30	1999

‘S’˜ŽÒ–¼	˜_•¶–¼
Atsushi Mori	Molecular Theoretical Study of Crystal-Melt Interface: Interfacial Tension and Boundary between Activation- and Activationless-Growth Regimes
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
J. Phys. Soc. Jpn.	68	8	2642-2647	1999

‘S’˜ŽÒ–¼	˜_•¶–¼
Jin-Song Li and Kazumi Nishioka	Generalized kinetic potential and mechanism of the ridge crossing in binary nucleation
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
J. Cryst. Growth	198/199	???	27-31	1999

‘S’˜ŽÒ–¼	˜_•¶–¼
Atsushi Mori and Igor L. Maksimov	On the Temkin model of solid-liquid interface
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
J. Cryst. Growth	200	1-2	297-304	1999

‘S’˜ŽÒ–¼	˜_•¶–¼
Lev N. Balykov, Masao Kitamura, Igor L. Maksimov, and Kazumi Nishioka	Growth and dissolution kinetics of step structure
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
J. Cryst. Growth	198/199	???	32-37	1999

‘S’˜ŽÒ–¼	˜_•¶–¼
Atsushi Mori	Erratum: Hydrodynamics consideration on the steady-state motion of a solid/liquid interface
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
J. Chem. Phys.	111	7	3313-3313	1999

‘S’˜ŽÒ–¼	˜_•¶–¼
Masaaki Sanada, Nobuyuki Donkai, and Kazumi Nishioka	Numerical Analysis of the Nucleation Process for Metallic Clusters in the Ionized Cluster Beam Technique
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
Jpn. J. Appl. Phys.	38	6A-1	3742-3746	1999

‘S’˜ŽÒ–¼	˜_•¶–¼
Igor. L. Maksimov and Kazumi Nishioka	Kinetical runaway in nucleation
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
Phys. Lett. A	264	???	51-56	1999

‘S’˜ŽÒ–¼	˜_•¶–¼
Jin-Song Li, Kazumi Nishioka	Direction of the steady state nucleation flux in the whole size space for binary systems
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
J. Chem. Phys.	110	12	5866-5872	1999

‘S’˜ŽÒ–¼	˜_•¶–¼
Kazumi Nishioka, Atsushi Mori, Kaoru J. Takano, Yoshihito Kaishita, and Shingo Narimatsu	Pressure-dependence of the interface tension of a critical nucleus in the binary-ideal solution
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
J. Cryst. Growth	200	3-4	592-598	1999

‘S’˜ŽÒ–¼	˜_•¶–¼
Masaaki Sanada, Igor L. Maksimov, and Kazumi Nishioka	Transient kinetics of the runaway nucleation
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
J. Cryst. Growth	198/199	???	67-70	1999

‘S’˜ŽÒ–¼	˜_•¶–¼
Atsushi Mori	Hydrothermodynamics consideration on the steady-state motion of a solid/liquid interface
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
J. Chem. Phys.	4-19	16	8679-8686	1999

‘S’˜ŽÒ–¼	˜_•¶–¼
Atsushi Mori	Steady-State Interface Motion: Formulation Extended to the Isothermal Case
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
J. Phys. Soc. Jpn.	68	3	876-880	1999

‘S’˜ŽÒ–¼	˜_•¶–¼
^“c¹º, Igor L. Maksimov	Šj¶¬—˜_‚É‚¨‚¯‚é—ÕŠEŠj‚ÌŠT”O
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
“ú–{Œ‹»¬’·Šw‰ïŽ	26	1	2-6	1999

‘S’˜ŽÒ–¼	˜_•¶–¼
Masaaki Sanada	Concept of the Critical Nucleus in Nucleation Theory
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
J. Jpn. Assoc. Cryst. Growth	26	1	2-6	1999

‘S’˜ŽÒ–¼	˜_•¶–¼
X “ÄŽj	ŒÅ‰tŠE–Ê‚Ì•ªŽq˜_
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
“ú–{Œ‹»¬’·Šw‰ïŽ	26	1	16-23	1999

‘S’˜ŽÒ–¼	˜_•¶–¼
Atsushi Mori	On the Molecular Theoretical Study of the Solid-Liquid Interface
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
J. Jpn. Assoc. Cryst. Growth	26	1	16-23	1999

‘S’˜ŽÒ–¼	˜_•¶–¼
A.Natori, D.Nakamura	Magnetic-Field Induced Transitions of Many-Electron States in Quantum Dots
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
Jpn.J.Appl.Phys.	38	???	380-383	1999

‘S’˜ŽÒ–¼	˜_•¶–¼
A.Natori, T.Kawabe	Stability of anisotropic missing dimer clusters on Si(001) surfaces
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
Surf.Sci.	433-435	???	600-604	1999

‘S’˜ŽÒ–¼	˜_•¶–¼
A.Natori, H.Harada	Surface melting of vicinal Si(111) surfaces
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
Surf.Sci.	438	???	162-172	1999

‘S’˜ŽÒ–¼	˜_•¶–¼
M. Sato and M. Uwaha	Growth of Step Bunches Formed by the Drift of Adatoms
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
Surf. Sci.	442	2	318-328	1999

‘S’˜ŽÒ–¼	˜_•¶–¼
Y. Saito	Clustering and Devil's Staircase in a One-Dimensional Adsprbate System
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
J. Phys. Soc. Jpn.	68	10	3320-3327	1999

‘S’˜ŽÒ–¼	˜_•¶–¼
Y. Saito	Dynamics of Step Fluctuation Width in a Step Train
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
J. Phys. Soc. Jpn.	68	11	3505-3508	1999

‘S’˜ŽÒ–¼	˜_•¶–¼
M. Sato and M. Uwaha	Change of Wandering Pattern with Anisotropy in Step Kinetics
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
J. Cryst. Growth	198/199	1	38-42	1999

‘S’˜ŽÒ–¼	˜_•¶–¼
X. Feng, E. Brener, D. Temkin, Y. Saito and H. Mueller-Krumbhaar	Creep Motion of a Solidification Front in a Two-Dimensional Binary Alloy
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
Phys. Rev. E	59	1	512-527	1999

‘S’˜ŽÒ–¼	˜_•¶–¼
M. Sato and M. Uwaha	Pattern Formation in the Instability of a Vicinal Sirface by the Drift of Adatoms
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
Phys. Rev. E	60	6	7120-7125	1999

‘S’˜ŽÒ–¼	˜_•¶–¼
²“¡³‰p, ã‰H–q•v	•½–ÊŠE–Ê‚Ì•sˆÀ’è‰»‚Ö‚ÌŒ‹»‚ÌˆÙ•û«‚ÌŒø‰Ê
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
“ú–{Œ‹»¬’·Šw‰ïŽ	26	1	31-39	1999

‘S’˜ŽÒ–¼	˜_•¶–¼
Masahide Sato and Makio Uwaha	Effect of Crystal Anisotropy on Instabilities of Flat Interfaces
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
Journal of the Japanese Association for Crystal Growth	26	1	31-39	1999

‘S’˜ŽÒ–¼	˜_•¶–¼
²“¡³‰pCã‰H–q•v	•\–ÊŒ´Žq‚ÌƒhƒŠƒtƒg‚É‚æ‚éƒXƒeƒbƒv‚Ìƒoƒ“ƒ`ƒ“ƒO
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
•\–Ê‰ÈŠw (“ú–{•\–Ê‰ÈŠw‰ïŽ)	20	12	824-829	1999

‘S’˜ŽÒ–¼	˜_•¶–¼
Masahide Sato and Makio Uwaha	Step bunching Induced by the Drift of Adatoms
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
Journal of The Surface Science Society of Japan	20	12	824-829	1999

‘S’˜ŽÒ–¼	˜_•¶–¼
Takao Yamamoto	Harmonically-Interacting Step Approach to the Relaxation Process of Vicinal Surface. II. The Relaxation Process Induced by the Step-Edge Diffusion
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
J. Phys. Soc. Jpn.	68	9	pp.2977-2984	1999

‘S’˜ŽÒ–¼	˜_•¶–¼
A. Koukitu, T. Taki, K. Narita, H. Seki	In situ monitoring of arsenic desorption on GaAs (111)B surface in atomic layer epitaxy
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
J. Cryst. Growth	198/199	???	1111-1118	1999

‘S’˜ŽÒ–¼	˜_•¶–¼
A. Koukitu, Y. Kumagai, T. Taki and H. Seki	Halogen-Transport Atomic-Layer Epitaxy of Cubic GaN Monitored by In Situ Gravimetric Method
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
Jpn. J. Appl. Phys.	38	9A	4980-4982	1999

‘S’˜ŽÒ–¼	˜_•¶–¼
A. Koukitu, Y. Kumagai, N. Kubota and H. Seki	Thermodynamic Analysis on the MOVPE Growth of Nitride Semiconductors Using Hydrazine
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
Phys. Stat. Sol. (b)	216	???	707-712	1999

‘S’˜ŽÒ–¼	˜_•¶–¼
A. Koukitu, T. Taki, N. Takahashi, H. Seki	Thermodynamic study on the role of hydrogen during the MOVPE growth of group III nitrides
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
J. Cryst. Growth	197	???	99-105	1999

‘S’˜ŽÒ–¼	˜_•¶–¼
S. Abe, K. Yamashita, Y. Nakashima, S. Ohkubo, T. Kita, H. Nakayama, T. Nishino, H. Yanagi and H. Ohta	Auger electron spectroscopy of super-doped Si:Mn thin films
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
Appl. Surf. Sci.	142	???	537-542	1999

‘S’˜ŽÒ–¼	˜_•¶–¼
T. Ohachi,J. M. Feng, K. Uwani, M. Uwani, M. Tateuchi, P. O. Vaccaro and K. Fujita	MBE growth of AlGaAs/GaAs heterostructure and silicon doping on GaAs (n11)A (n=1-4) substrates
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
J. Crystal Growth	201/202	???	226-231	1999

‘S’˜ŽÒ–¼	˜_•¶–¼
K Koizumi, P. O. Vaccaro, K Fujita, M Tateuchi, and T. Ohachi	Lateral Wet Oxidation of AlAs Layer in GaAs/AlAs Heterostractures Grown by MBE on GaAs (n11)A Substrate
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
J. Crystal Growth	198/199	???	1136-1140	1999

‘S’˜ŽÒ–¼	˜_•¶–¼
P. O. Vaccaro, K. Koizumi,K. Fujita and T. Ohachi	AlAs oxidation process in GaAs/AlGaAs/AlAs heterostructures grown by molecular beam epitaxy on GaAs(n11)A substrates
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
Microelectronics J.	30	???	387-391	1999

‘S’˜ŽÒ–¼	˜_•¶–¼
J. M. Feng, M. Tateuchi, K. Asai, M. Uwani, P. O. Vaccaro, K. Fujita and T. Ohachi	Optical transitions of GaAs/Al0.35Ga0.65 asymmetric double quantum wells grown on GaAs(n11)A (n <= 4 ) substrates
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
Microelectronics J.	30	???	433-437	1999

‘S’˜ŽÒ–¼	˜_•¶–¼
T. Ohachi, J. M. Feng, K. Asai, M. Uwani, M. Tateuchi, P. O. Vaccaro, and K. Fujita	Arsenic vapor pressure dependence of surface morphology and silicon doping in molecular beam epitaxial grown GaAs (n11)A (n =1- 4 ) substrates
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
Microelectronics J.	30	???	471-477	1999

‘S’˜ŽÒ–¼	˜_•¶–¼
K.Tanahashi and N.Inoue	Nonequilibrium thermodynamic analysis on the behavior of point defects in growing silicon crystals: effects of stress
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
Journal of. Materials Science, Materials in Electronics	10	???	359-363	1999

‘S’˜ŽÒ–¼	˜_•¶–¼
’I‹´ŽlC ‹e’r“¹^C ˆäã’¼‹v	ƒVƒŠƒRƒ“Œ‹»’†‚Ì‹ó“´Œ‡Š×‚Ì”Mˆ—‚É‚æ‚éÁ–Å‹@\
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
^‹ó	42	3	485-488	1999

‘S’˜ŽÒ–¼	˜_•¶–¼
K.Tanahashi, M.Kikuchi, N.Inoue	Annihilation mechanism by heat-treating void defect in silicon crystal
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
Vacuum (Journal of The Vacuum Society of Japan)	42	3	485-488	1999

‘S’˜ŽÒ–¼	˜_•¶–¼
‹e’r’Ê^C ˆäã’¼‹vC ’I‹´Žl	ƒVƒŠƒRƒ“Œ‹»’†‚Ì“_Œ‡Š×Œ`¬‚É‘Î‚·‚é•sƒ•¨Œ´Žq‚Ì‰ž—ÍŒø‰Ê
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
^‹ó	42	3	349-352	1999

‘S’˜ŽÒ–¼	˜_•¶–¼
M.Kikuchi, N.Inoue, K.Tanahashi	Effect of stress by impurites on grown-in defects in silicon
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
Vacuum (Journal of The Vacuum Society of Japan)	42	3	349-352	1999

‘S’˜ŽÒ–¼	˜_•¶–¼
ˆäã’¼‹vA’I‹´ŽlAX“ÄŽj	CZ-SiŒ‹»¬’·‚É‚¨‚¯‚é“_Œ‡Š×‚Ì‹““®[‰ž—ÍE•sƒ•¨‚ÌŒø‰ÊA•\–Ê‚ÆŠE–ÊA‰·“x‚ÌŒù”z[
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
“ú–{Œ‹»¬’·Šw‰ïŽ	26	5	242-249	1999

‘S’˜ŽÒ–¼	˜_•¶–¼
N. Inoue, K. Tanahashi, A. Mori	Point defect behavior in growing silicon crystals
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
Journal of the Japanese Association for Crystal Growth	26	5	242-249	1999

‘S’˜ŽÒ–¼	˜_•¶–¼
Minya Ma, Tomoya Ogawa, Masahito Watanabe, and Minoru Eguchi	Study on defects in CZ-Si crystals grown under three different cusp magnetic fields by infrared light scattering tomography
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
J. Cryst. Growth	205	1-2	50-58	1999

‘S’˜ŽÒ–¼	˜_•¶–¼
Minya Ma, Toshihide Tsuru, Tomoya Ogawa, Zhenhong Mai, Chaoying Wang, Jiangong Guo, Xucun Ma, and E G Wang	Observation of defects in a C3N4/diamond/Si structure by infrared light scattering tomography
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
J. Phys. Condens. Matter	11	???	L191-L197	1999

‘S’˜ŽÒ–¼	˜_•¶–¼
J. Kang and T. Ogawa,	Materials in nano-pipes of undoped GaN,
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
J. Mater. Res.	14	???	1-3	1999

‘S’˜ŽÒ–¼	˜_•¶–¼
Y. Yukawa, K. Sakai, T. Ogawa	Measurement of stress distribution inside crystals by multi-channel Raman scattering tomography
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
Solid State Electronics	43	7	1195-1199	1999

‘S’˜ŽÒ–¼	˜_•¶–¼
T. Ogawa and M. Ma,	Nucleation and growth of vacancy agglomeration in CZ silicon crystals,
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
J. Korean Association of Crystal Growth,	9	???	286-288	1999

‘S’˜ŽÒ–¼	˜_•¶–¼
J. Kang, Q. Huang and T. Ogawa,	Evidence of the precipitates in the v-shape defects of undoped GaN,
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
Chinese Physics Letters	16	???	47-49	1999

‘S’˜ŽÒ–¼	˜_•¶–¼
N. Nango, S. Iida and T. Ogawa,	An optical study on dislocation clusters in a slowly pulled silicon crystal,
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
J. Appl. Phys.	86	???	6000-6004	1999

‘S’˜ŽÒ–¼	˜_•¶–¼
J. Kang and T. Ogawa:	Yellow luminescence from precipitates in GaN epilayers,
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
Appl. Phys.	A 69	???	631-635	1999

‘S’˜ŽÒ–¼	˜_•¶–¼
Nr—EA‰©Œ[¹A¬ì’qÆA	GaNŠO‰„‘w’†“IŒ‡Š×Œ¤‹†A
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
•¨—Šw•ñA	48	???	1372-1380	1999

‘S’˜ŽÒ–¼	˜_•¶–¼
Junyoun Kang, Qisheng Huang and Tomoya Ogawa,	Defects in GaN epilayers
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
Acta Physica Sinica	48	???	1372-1380	1999

‘S’˜ŽÒ–¼	˜_•¶–¼
Nr—EA‰©Œ[¹A¬ì’qÆA	GaNŠO‰„‘w’†“IŒ‡Š×‘ÎŒõŠw«Ž¿‰eŒüA
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
”ŒõŠw•ñA	20	???	29-31	1999

‘S’˜ŽÒ–¼	˜_•¶–¼
Junyong Kang, Qisheng Huang and Tomoya Ogawa,	Influence of defects on the optical properties on GaN epilayers
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
Chinese Journal of luminescence	20	???	29-31	1999

‘S’˜ŽÒ–¼	˜_•¶–¼
Takayoshi Shimura, Takuji Hosoi, Riho Ejiri, and Masataka Umeno	Ordered Structure in Buried Oxide Layers of SOI Wafers
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
Jpn. J. Appl. Phys.	38	Suppl.38-1	297-300	1999

‘S’˜ŽÒ–¼	˜_•¶–¼
Noriko Akutsu and Yasuhiro Akutsu	Thermal evolution of step stiffness on the Si(001) surface: Temperature-rescaled Ising-model approach
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
Phys. Rev. B 57	8	???	R4233-R4236	1998

‘S’˜ŽÒ–¼	˜_•¶–¼
Jin-Song Li and Kazumi Nishioka	Steady state nucleation-flux profile in binary systems
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
Chem. Phys. Lett.	295	???	211-216	1998

‘S’˜ŽÒ–¼	˜_•¶–¼
Lev N. Balykov, Masao Kitamura, Igor L. Maksimov, and Kazumi Nishioka	Kinetics of non-equilibrium step structure
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
Phil. Mag. Lett.	78	5	411-418	1998

‘S’˜ŽÒ–¼	˜_•¶–¼
Jin-Song Li, Kazumi Nishioka, and Igor L. Maksimov	Generalized kinetic potential in binary nucleation
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
Phys. Rev. E	58	6-B	7580-7586	1998

‘S’˜ŽÒ–¼	˜_•¶–¼
A.Natori, Y.Takase and K.Natori	Magnetoconductance of a Rectangular Atomic Loop
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
Solid State Electronics	42	???	1109-1114	1998

‘S’˜ŽÒ–¼	˜_•¶–¼
A.Natori, M.Murayama, D.Matsumoto and H.Yasunaga	Decay Process of a Crater/Hillock and Step Structure Transformation
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
Surf.Sci.	409	???	160-170	1998

‘S’˜ŽÒ–¼	˜_•¶–¼
A.Natori, K.Toda, A.Tanaka and H.Yasunaga	Interface Atomic Structures in Alkali Halides Heteroepitaxy
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
Appl.Surf.Sci.	130-132	???	616-622	1998

‘S’˜ŽÒ–¼	˜_•¶–¼
A.Natori, R.Nishiyama and H.Yasunaga	Stability of Ordered Missing-Dimer Structures and the Ordering Dynamics on Si(001)
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
Surf.Sci.	397	???	71-83	1998

‘S’˜ŽÒ–¼	˜_•¶–¼
Y. Saito and H. Mueller-Krumbhaar	Strain Effect on Eden Model
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
J. Phys. Soc. Jpn.	67	11	3661-3663	1998

‘S’˜ŽÒ–¼	˜_•¶–¼
M. Sato and M. Uwaha	Hierarchical Bunching of Steps in a Conserved System
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
J. Phys. Soc. Jpn.	67	11	3675-3678	1998

‘S’˜ŽÒ–¼	˜_•¶–¼
M. Uwaha	Anisotropy Effect on the Flow-Induced Instability of the Solid-Superfluid Interface
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
J. Low Temp. Phys.	111	1-2	37-48	1998

‘S’˜ŽÒ–¼	˜_•¶–¼
O. Pierre-Louis, C. Misbah, Y. Saito, P. Politi and J. Krug	New Nonlinear Evolution Equation for Steps during MBE on Vicial Surfaces
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
Phys. Rev. Lett.	80	19	4221-4224	1998

‘S’˜ŽÒ–¼	˜_•¶–¼
M. Sato M. Uwaha and Y. Saito	Control of Chaotic Wandering of an Isolated Step by the Drift of Adatoms
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
Phys. Rev. Lett.	80	19	4233-4236	1998

‘S’˜ŽÒ–¼	˜_•¶–¼
X. Feng, E. Brener, D. Temkin, Y. Saito and H. Mueller-Krumbhaar	Solidification in a One-Dimensional Model for a Disordered Binary Alloy under Diffusion
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
Euro. Phys. J. B	5	3	663-669	1998

‘S’˜ŽÒ–¼	˜_•¶–¼
M. Uwaha and M. Sato	Wandering and Bunching Instabilities of Steps Described by Nonlinear Evolution Equations
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
Surf. Rev. Lett.	5	3	841-849	1998

‘S’˜ŽÒ–¼	˜_•¶–¼
ã‰H–q•vC²“¡³‰p	Œ´ŽqƒXƒeƒbƒv‚É‚æ‚éƒƒ]ƒXƒRƒsƒbƒNƒpƒ^[ƒ“Œ`¬
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
“ú–{•¨—Šw‰ïŽ	53	9	673-680	1998

‘S’˜ŽÒ–¼	˜_•¶–¼
Masahide Sato and Makio Uwaha	Mesoscopic Pattern formation of Atomic Steps
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
Butsuri(Bulletin of The Physical Society of Japan)	53	9	673-680	1998

‘S’˜ŽÒ–¼	˜_•¶–¼
Takao Yamamoto	Harmonically-Interacting Step Approach to the Relaxation Process of Vicinal Surface. I. The Relaxation Process Induced by the Attachment-Detachment Mechanism
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
J. Phys.Soc. Jpn.	67	7	2335-2345	1998

‘S’˜ŽÒ–¼	˜_•¶–¼
Etsuro Yokoyama, Koichi Okada and Katsuo Tsukamoto	Precise visualization of non-steady state concentration field around a growing crystal in solution
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
Forma	13	???	363-374	1998

‘S’˜ŽÒ–¼	˜_•¶–¼
A. Koukitu and H. Seki	Thermodynamic study on phase separation during MOVPE growth of InxGa1-xN
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
J. Cryst. Growth	189/190	???	13-18	1998

‘S’˜ŽÒ–¼	˜_•¶–¼
N. Takahashi, J. Ogasawara and A. Koukitu	Vapor Phase Epitaxy of InN Using InCl and InCl3 Sources
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
J. Cryst. Growth	172	???	298-302	1998

‘S’˜ŽÒ–¼	˜_•¶–¼
N. Takahashi, N. Matsumoto, A. Koukitu and H. Seki	Vapor-phase epitaxy of InxGa1-xN using chloride sources
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
J. Cryst. Growth	189/190	???	37-41	1998

‘S’˜ŽÒ–¼	˜_•¶–¼
N. Takahashi, N. Takeda, A. Koukitu and H. Seki	Growth of a NdBaCuO Superconducting Thin Film on a MgO Substrate by Mist Microwave-Plasma Chemical Vapor Deposition Using a CeO2 Buffer Layer
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
Jpn. J. Appl. Phys.	37	???	379-381	1998

‘S’˜ŽÒ–¼	˜_•¶–¼
T. Taki, T. Nakajima, A. Koukitu and H. Seki	Substitution reaction of surface adsorbed P atoms to As atoms in the GaP/GaAs atomic layer epitaxy
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
J. Cryst. Growth	183	???	75-80	1998

‘S’˜ŽÒ–¼	˜_•¶–¼
A. Koukitu, S. Hama, T. Taki and H. Seki	Thermodynamic Analysis of Hydride Vapor Phase Epitaxy of GaN
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
Jpn. J. Appl. Phys.	37	???	762-765	1998

‘S’˜ŽÒ–¼	˜_•¶–¼
T. Taki and A. Koukitu	In Situ Optical Monitoring of Hydrogen Chemisorption on the GaAs (111) B Ga Surface
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
Jpn. J. Appl. Phys.	37	???	766-770	1998

‘S’˜ŽÒ–¼	˜_•¶–¼
N. Takahashi, A. Koukitu and H. Seki	Crystallinity and Superconducting Properties of YBaCuO Thin Films on NdGaO3 Substrate Prepared by Mist Microwave-Plasma CVD
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
J. Material Science Letters	17	???	877-879	1998

‘S’˜ŽÒ–¼	˜_•¶–¼
T. Taki, K. Narita, A. Koukitu and H. Seki	Investigation of Arsenic Desorption from GaAs(111)B Surface in Atmospheric Pressure Atomic Layer Epitaxy
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
Jpn. J. Appl. Phys.	37	???	L1367-L1369	1998

‘S’˜ŽÒ–¼	˜_•¶–¼
ã–ã’@–¾”Œ, ŠÖ@šæ	’‚‰»•¨”¼“±‘Ì‹C‘Š¬’·ƒGƒsƒ^ƒLƒV[‚Ì”M—ÍŠw
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
“ú–{Œ‹»¬’·Šw‰ïŽ	25	???	81-98	1998

‘S’˜ŽÒ–¼	˜_•¶–¼
A. Koukitu and H. Seki	Thermodynamic Study on Vapor Phase Epitaxy of Nitride Semiconductors
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
Journal of the Japanese association for crystal growth	25	???	81-98	1998

‘S’˜ŽÒ–¼	˜_•¶–¼
S. Abe, H. Nakayama, T. Nishino and S. Iida	Valence state analysis of Ca and Si in CaSi2 during CaSi2-H2O reaction
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
J. Mater. Res	13	5	1401-1404	1998

‘S’˜ŽÒ–¼	˜_•¶–¼
M. Ozawa, P.O. Vaccaro, K. Fujita and T.Ohachi	Lateral p-n Jnction Light Emitting Diodes Grown by MBE on GaAs(111)A and (311)A patterned substrates
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
The Science and Engineering Review of Doshisha University	39	???	67-71	1998

‘S’˜ŽÒ–¼	˜_•¶–¼
•l“c—˜˜aAaì—I‰îA‰ž•¶•WA’I‹´ŽlAã‰Y—Ç—FAˆäã’¼‹v	‚”Z“xƒŠƒ“ƒh[ƒvƒVƒŠƒRƒ“‚Ì•\–Ê‚ÌAFMŠÏŽ@
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
•\–Ê‰ÈŠw	19	10	624-628	1998

‘S’˜ŽÒ–¼	˜_•¶–¼
T.Hamada, Y.Mizokawa, W.B.Ying, K.Tanahashi, Y.Kamiura, N.Inoue	Observasion of Heavily Phosphorus-Doped Silicon Surfaces by Atomic Force Microscope
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
Journal of The Surface Science Society of Japan	19	10	624-628	1998

‘S’˜ŽÒ–¼	˜_•¶–¼
’I‹´ŽlCˆäã’¼‹vCaì—I‰î	ƒVƒŠƒRƒ“Œ‹»’†‚Ì¬’·Žž“±“üŒ‡Š×‚Ì‹Ž‹“I•ª•z‚Ì”¶
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
^‹ó	41	3	104-107	1998

‘S’˜ŽÒ–¼	˜_•¶–¼
K.Tanahashi, N.Inoue, Y.Mizokawa	Point defect concentration in a growing silicon crystal
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
Vacuum (Journal of The Vacuum Society of Japan)	41	3	104-107	1998

‘S’˜ŽÒ–¼	˜_•¶–¼
J. Kang and T. Ogawa,	Precipitates in GaN epilayers grown on sapphire substrates,
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
J. Mater. Res.	13,	???	2100-2104,	1998

‘S’˜ŽÒ–¼	˜_•¶–¼
S. Kawai and T. Ogawa,	Second-harmonic generation from needlelike ferroelectric domains in Sr0.6Ba0.4Nd2O6 single crystsals
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
Appl. Phys. Let.,	73	???	59-61	1998

‘S’˜ŽÒ–¼	˜_•¶–¼
S. Kawai and T. Ogawa,	Second-harmonic generation from needlelike ferroelectric domains in SBN:609 single crystsals,
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
Appl. Phys. Let.,	73	???	768-770	1998

‘S’˜ŽÒ–¼	˜_•¶–¼
S. Ibuka, M. Tajima, M. Saito, J. Jablonski, M. Warashina and K. Nagasaka	Photoluminescence due to degenerate electron-hole system in silicon-on-insulator wafers under ultraviolet light excitation
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
Jpn. J. Appl. Phys.	37	1	141-145	1998

‘S’˜ŽÒ–¼	˜_•¶–¼
M. Tajima and S. Ibuka	Luminescence due to electron-hole condensation in silicon-on-insulator
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
J. Appl. Phys.	84	4	2224-2228	1998

‘S’˜ŽÒ–¼	˜_•¶–¼
M. Tajima, A. Ogura, T. Karasawa and A. Mizoguchi	Defect analysis in bonded and H+ split silicon-on-insulator wafers by photoluminescence spectroscopy and transmission electron microscopy
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
Jpn. J. Appl. Phys. (Express Letter)	37	10B	L1199-L1202	1998

‘S’˜ŽÒ–¼	˜_•¶–¼
Takayoshi Shimura, Hiroo Sensui, and Masataka Umeno	Effects of the Substrate Crystals upon the Structure of Thermal Oxide Layers on Si
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
Cryst. Res. Technol.	38	4	637-642	1998

‘S’˜ŽÒ–¼	˜_•¶–¼
Noriko Akutsu and Yasuhiro Akutsu	Step stiffness and equilibrium island shape of Si(100) surface: statistical-mechanical calculation by the imaginary path weight random-walk method
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
Surf. Sci.	376	???	92-98	1997

‘S’˜ŽÒ–¼	˜_•¶–¼
A.Natori, Y.Sugimoto and M.Fujito	Magnetic Field Effects on Anisotropic Quantum Dots
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
Jpn.J.Appl.Phys.	36	???	3960-3963	1997

‘S’˜ŽÒ–¼	˜_•¶–¼
M. Sato and M. Uwaha	Kinematical Bound States of Steps Caused by Asymmetry in Step Kinetics
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
J. Phys. Soc. Jpn.	66	4	1054-1062	1997

‘S’˜ŽÒ–¼	˜_•¶–¼
K. Nishino, M. Uwaha and Y. Saito	Power Law Behavior of the Step Roughening with Surface Diffusion
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
Surf. Sci.	374	???	291-297	1997

‘S’˜ŽÒ–¼	˜_•¶–¼
S. Miyashita, Y. Saito and M. Uwaha	Experimental Evidence of Dynamical Scaling in a Two-Dimensional Fractal Growth
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
J. Phys. Soc. Jpn.	66	4	929-932	1997

‘S’˜ŽÒ–¼	˜_•¶–¼
²“¡³‰p, ã‰H–q•v	•\–ÊŠgŽUê’†‚Å‚ÌŒ´ŽqƒXƒeƒbƒv‚Ì•sˆÀ’è‰»
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
“ú–{Œ‹»¬’·Šw‰ïŽ	24	1	47-61	1997

‘S’˜ŽÒ–¼	˜_•¶–¼
Masahide Sato and Makio Uwaha	Instabilities of Atomic Steps in a Surface Diffusion Field
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
Journal of the Japanese Association for Crystal Growth	24	1	47-61	1997

‘S’˜ŽÒ–¼	˜_•¶–¼
Hidetoshi Miike, Tatsunari Sakurai, Atsushi Osa and Etsuro Yokoyama	Observation of two-dimensional Brownian motion by microscope image sequence processing
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
J. Phys. Soc. Jpn.	66	???	1647-1655	1997

‘S’˜ŽÒ–¼	˜_•¶–¼
Tatsunari Sakurai, Etsuro Yokoyama and Hidetoshi Miike	Propagation of surface deformation coupled with convection waves under the excitation of a chemical wave train
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
Phy. Rev. E	56	???	R2367-R2370	1997

‘S’˜ŽÒ–¼	˜_•¶–¼
N. Takahashi, R. Matsumoto, A. Koukitu and H. Seki	Growth of GaN on GaAs(111)B by Metalorganic Hydrogen Chloride VPE Using Double Buffer Layer
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
Jpn. J. Appl. Phys.	36	???	1133-1135	1997

‘S’˜ŽÒ–¼	˜_•¶–¼
A. Koukitu, N. Takahashi and H. Seki	Thermodynamic Study on Metalorganic Vapor-Phase Epitaxial Growth of Group III Nitrides
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
Jpn. J. Appl. Phys.	36	???	1136-1138	1997

‘S’˜ŽÒ–¼	˜_•¶–¼
T. Taki, A. Koukitu	Atomic layer epitaxy of GaAs using GaBr and GaI sources
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
Appl. Surf. Sci.	112	???	127-131	1997

‘S’˜ŽÒ–¼	˜_•¶–¼
A. Koukitu, N. Takahashi, T. Taki and H. Seki	Thermodynamic analysis of the MOVPE growth of InxGa1-xN
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
J. Cryst. Growth	170	???	306-311	1997

‘S’˜ŽÒ–¼	˜_•¶–¼
N. Takahashi, A. Koukitu and H. Seki	Growth of NdBaCuO Superconducting Thin Films using Mist Microwave-Plasma Chemical Vapor Deposition with Dual Sources
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
Jpn. J. Appl. Phys.	36	???	553-555	1997

‘S’˜ŽÒ–¼	˜_•¶–¼
N. Takahashi, R. Matsumoto, A. Koukitu and H. Seki	Vapor Phase Epitaxy of InxGa1-xN Using InCl3, GaCl3 and NH3 Sources
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
Jpn. J. Appl. Phys.	36	???	601-603	1997

‘S’˜ŽÒ–¼	˜_•¶–¼
A. Koukitu and T. Taki	In situ monitoring of hydrogen adsorption on (001) Ga surface in GaAs atomic layer epitaxy
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
Appl. Surf. Sci.	112	???	63-68	1997

‘S’˜ŽÒ–¼	˜_•¶–¼
N. Takahashi, R. Matsumoto, A. Koukitu and H. Seki	Growth of InN at High Temperature by Halide Vapor Phase Epitaxy
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
Jpn. J. Appl. Phys.	36	???	743-745	1997

‘S’˜ŽÒ–¼	˜_•¶–¼
A. Koukitu and H. Seki	Thermodynamic Analysis on Molecular Beam Epitaxy of GaN, InN and AlN
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
Jpn. J. Appl. Phys.	36	???	L750-L753	1997

‘S’˜ŽÒ–¼	˜_•¶–¼
E. Kulatov, H. Nakayama and H. Ohta	The influence of the stacking sequence on the electronic structure and optical properties of CaSi2
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
J. Phys.: Condens. Matter	9	???	10159-10171	1997

‘S’˜ŽÒ–¼	˜_•¶–¼
S. Abe, H. Nakayama, T. Nishino, and S. Iida	Auger valence electron spectra in Ca-silicides
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
J. Mat. Res.	12	2	407-411	1997

‘S’˜ŽÒ–¼	˜_•¶–¼
K. Yamashita, T. Kita, H. Nakayama, and T. Nishino	Photoluminescence from metastable states in long-range ordered (Al0.5Ga0.5)0.51In0.49P
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
Phys. Rev. B	55	7	4411-4416	1997

‘S’˜ŽÒ–¼	˜_•¶–¼
S. Abe, H. Nakayama, T. Nishino and S. Iida	Valence-electron spectral change and charge transfer mechanism on CaSi2 during CaSi2-H2O reaction
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
Appl. Surf. Sci.	113/114	???	562-566	1997

‘S’˜ŽÒ–¼	˜_•¶–¼
H. Nakayama, A. Furuichi, T. Kita and T. Nishino	Stochastic growth theory of molecular beam epitaxy with atom correlation effects, A Monte-Carlo master equation method
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
Appl. Surf. Sci.	113/114	???	631-637	1997

‘S’˜ŽÒ–¼	˜_•¶–¼
K. Sakai, T. Ogawa	Fourie-transformed light-scattering tomography for determination of scatter shapes
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
Meas. Sci. Technol.	8	???	1090-1094	1997

‘S’˜ŽÒ–¼	˜_•¶–¼
J. Kang and T. Ogawa,	Misfit dislocations and stresses in GaN epilayers
ŠwpŽGŽ–¼	Šª	†	ƒy[ƒW	”s”N
Appl. Phys. Let.	71	???	2304-2306	1997

B.‘Û‰ï‹c”•\˜_•¶iInternational Conferencesj

‘S’˜ŽÒ–¼	˜_•¶–¼
I. Okubo, H. Harada, T. Mikayama, D. Funao and N. Inoue	Analysis of localized vibration of nitrogen complexes in CZ silicon
‰ï‹c–¼	ŠJÃêŠ	˜_•¶”Ô†	ƒy[ƒW	”s”N
EMRS 2002 Spring Meeting	Strasbourg	???	???	2002

‘S’˜ŽÒ–¼	˜_•¶–¼
M. Tajima and S. Ibuka	Characterization of SOI wafers by photoluminescence (Invited)
‰ï‹c–¼	ŠJÃêŠ	˜_•¶”Ô†	ƒy[ƒW	”s”N
9th Internat. Symp. Silicon Materials Science and Technology	Philadelphia	???	???	2002

‘S’˜ŽÒ–¼	˜_•¶–¼
M. Uwaha	Shape Relaxation of Islands (invited)
‰ï‹c–¼	ŠJÃêŠ	˜_•¶”Ô†	ƒy[ƒW	”s”N
Japan-Netherlands Joint Symposium on Crustal Growth: Theory and In-Situ Measurements	Akiu	???	???	2002

‘S’˜ŽÒ–¼	˜_•¶–¼
N. Inoue	Quantification of nitrogen concentration in CZ silicon by IR spectroscopy (Invited)
‰ï‹c–¼	ŠJÃêŠ	˜_•¶”Ô†	ƒy[ƒW	”s”N
Electrochem. Soc. 2002 Fall Meeting	Salt Lake City	???	???	2002

‘S’˜ŽÒ–¼	˜_•¶–¼
N. Inoue, H. Harada, S. Uda and I. Ohkubo	Thermodynamic analysis on the distribution coefficient of impurities in Czochralski silicon
‰ï‹c–¼	ŠJÃêŠ	˜_•¶”Ô†	ƒy[ƒW	”s”N
EMRS 2002 Spring Meeting	Strasbourg	???	???	2002

‘S’˜ŽÒ–¼	˜_•¶–¼
N.Inoue, K.Shingu and K.Masumoto	Measurement of nitrogen concentration in silicon
‰ï‹c–¼	ŠJÃêŠ	˜_•¶”Ô†	ƒy[ƒW	”s”N
9th Int. Symp. Silicon Materials Sci. & Technol.. May	Philadelphia	???	???	2002

‘S’˜ŽÒ–¼	˜_•¶–¼
T. Matsumoto, D. Funao, Y. Yamanaka and N. Inoue	Infrared absorption measurement of nitrogen concentration in CZ-Si crystal
‰ï‹c–¼	ŠJÃêŠ	˜_•¶”Ô†	ƒy[ƒW	”s”N
EMRS 2002 Spring Meeting	Strasbourg	???	???	2002

‘S’˜ŽÒ–¼	˜_•¶–¼
A. Ichimiya, K. Hayashi, E. D. Williams, T. L. Einstein and M. Uwaha	Formation and Decay Processes of Silicon Mounds on Si(111) Surfaces (invited)
‰ï‹c–¼	ŠJÃêŠ	˜_•¶”Ô†	ƒy[ƒW	”s”N
IUVSTA 15th International Vacuum Congress/AVS 48th International Symposium/11th International Conference on Solid Surfaces	San Francisco(USA)	???	???	2001

‘S’˜ŽÒ–¼	˜_•¶–¼
A.Natori, S. Ohnuma, N. H. Quang	Charged magnetoexcitons in parabolic quantum dots
‰ï‹c–¼	ŠJÃêŠ	˜_•¶”Ô†	ƒy[ƒW	”s”N
Int. Conf. Phys. of Semicond.	Osaka	???	1297-1298	2001

‘S’˜ŽÒ–¼	˜_•¶–¼
Futoshi Shirazawa, Atsushi Mori, and Naohisa Inoue	Molecular Dynamics Simulation of Crystal/Melt Interface in Temperature Gradient
‰ï‹c–¼	ŠJÃêŠ	˜_•¶”Ô†	ƒy[ƒW	”s”N
The 13th Int. Conf. on Crystal Growth (ICCG-13/ICVGE-11)	Kyoto, Japan	04a-K32-06	500-500	2001

‘S’˜ŽÒ–¼	˜_•¶–¼
H. Harada , I.Ohkubo, T. Mikayama Y. Yamanaka. and N. Inoue	Valence force field analysis on nitrogen in silicon
‰ï‹c–¼	ŠJÃêŠ	˜_•¶”Ô†	ƒy[ƒW	”s”N
21st Int. Conf. Defects in Semiconductors	Giessen (Germany)	PA14	119-119	2001

‘S’˜ŽÒ–¼	˜_•¶–¼
H. Murakami, C. Fujiwara, Y. Matsuo, Y. Kumagai, H. Seki, A. Koukitu	Influence of Substrate Orientation on the Growth of Low-Temperature GaN Buffer Layers between GaAs (111)A and (111)B Substrates
‰ï‹c–¼	ŠJÃêŠ	˜_•¶”Ô†	ƒy[ƒW	”s”N
13th International Conference on Crystal Growth (ICCG-13)	Kyoto	02a-SB2-06	304	2001

‘S’˜ŽÒ–¼	˜_•¶–¼
H. Nakayama@ and E. Kulatov	Growth and Properties of Super-Doped Semiconductors: Si:Mn and GaN:Mn
‰ï‹c–¼	ŠJÃêŠ	˜_•¶”Ô†	ƒy[ƒW	”s”N
Proc. 6th International Symposium on Advanced Physical Fields; Growth of Well-Defined Nanostructures	Tsukuba	???	28-32	2001

‘S’˜ŽÒ–¼	˜_•¶–¼
H. Uemura, Y. Saito and M. Uwaha	Elastic Interaction in 2D Discrete Lattice Models and Equilibrium Crystal Shapes
‰ï‹c–¼	ŠJÃêŠ	˜_•¶”Ô†	ƒy[ƒW	”s”N
The 13th International Conference on Crystal Growth	Kyoto	31p-K25-12	51	2001

‘S’˜ŽÒ–¼	˜_•¶–¼
K. Motoki, T. Okahisa, N. Matsumoto, H. Kimura, H. Kasai, K. Takemoto, K. Uematsu, S. Nakahata, M. Ueno, Y. Kumagai, A. Koukitu, and H. Seki	Growth and Characterization of Freestanding GaN substrates
‰ï‹c–¼	ŠJÃêŠ	˜_•¶”Ô†	ƒy[ƒW	”s”N
13th International Conference on Crystal Growth (ICCG-13)	Kyoto	02a-SB2-02	302	2001

‘S’˜ŽÒ–¼	˜_•¶–¼
K. Tanahasi, H. Harada, A. Koukitsu and N. Inoue	Modeling of point defect behavior by the stress due to impurity doping in growing silicon
‰ï‹c–¼	ŠJÃêŠ	˜_•¶”Ô†	ƒy[ƒW	”s”N
21st Int. Conf. Defects in Semiconductors	Giessen (Germany)	PA88	182-182	2001

‘S’˜ŽÒ–¼	˜_•¶–¼
M. Mayumi, F. Satoh, Y. Kumagai, K. Takemoto and A. Koukitu	Influence of Polarity on Surface Reaction between GaN{0001} and Hydrogen
‰ï‹c–¼	ŠJÃêŠ	˜_•¶”Ô†	ƒy[ƒW	”s”N
The Fourth International Conference on Nitride Semiconductors (ICNS-4)	Denver	P9.5	42	2001

‘S’˜ŽÒ–¼	˜_•¶–¼
M. Mayumi, F. Satoh, Y. Kumagai, K. Takemoto and A. Koukitu	Influence of Lattice Polarity on Wurzite GaN {0001} Decomposition Studied by in situ Gravimetric Monitoring Method
‰ï‹c–¼	ŠJÃêŠ	˜_•¶”Ô†	ƒy[ƒW	”s”N
13th International Conference on Crystal Growth (ICCG-13)	Kyoto	03a-SB2-25	424	2001

‘S’˜ŽÒ–¼	˜_•¶–¼
M. Sato, M. Uwaha and Y. Saito	Step Bunching Induced by Drift of Adatoms with Anisotropic Surface Diffusion
‰ï‹c–¼	ŠJÃêŠ	˜_•¶”Ô†	ƒy[ƒW	”s”N
The 13th International Conference on Crystal Growth	Kyoto	04a-K25-02	491	2001

‘S’˜ŽÒ–¼	˜_•¶–¼
M. Tajima	Characterization of silicon-on-insulator wafers by photoluminescence under UV light excitation (Invited)
‰ï‹c–¼	ŠJÃêŠ	˜_•¶”Ô†	ƒy[ƒW	”s”N
13th Internat. Conf. Crystal Growth	Kyoto	02a-S21-8	???	2001

‘S’˜ŽÒ–¼	˜_•¶–¼
M. Tajima, S. Ibuka and S. Arai	Condensate luminescence under ultraviolet excitation : Application to the study of ultrathin SOI layers (Invited)
‰ï‹c–¼	ŠJÃêŠ	˜_•¶”Ô†	ƒy[ƒW	”s”N
9th Internat. Conf. Defects - Recognition, Imaging and Physics in Semiconductors	Rimini	S2-1	???	2001

‘S’˜ŽÒ–¼	˜_•¶–¼
M. Uwaha	Surface Step Dynamics I : Basic Concepts, Theory and Simulation (invited)
‰ï‹c–¼	ŠJÃêŠ	˜_•¶”Ô†	ƒy[ƒW	”s”N
The 11th International Summer School on Crystal Growth	Kitakomatsu	L6	???	2001

‘S’˜ŽÒ–¼	˜_•¶–¼
M.Murayama, T. Nakayama, A.Natori	Dual Au-Si bonding character and Au surfactant effect on Au/Si(111) surfaces
‰ï‹c–¼	ŠJÃêŠ	˜_•¶”Ô†	ƒy[ƒW	”s”N
Int. Conf. Phys. of Semicond.	Osaka	???	341-342	2001

‘S’˜ŽÒ–¼	˜_•¶–¼
Makot Itoh and Takahisa Ohno	Atomic-scale Monte Carlo study of GaAs(001)-(2x4) growth on vicinal surfaces
‰ï‹c–¼	ŠJÃêŠ	˜_•¶”Ô†	ƒy[ƒW	”s”N
Surf. Sci	???	493	430-437	2001

‘S’˜ŽÒ–¼	˜_•¶–¼
N. Inoue	Nitrogen in silicon(Invited)
‰ï‹c–¼	ŠJÃêŠ	˜_•¶”Ô†	ƒy[ƒW	”s”N
Proc. Forum Sci. & Technol.Silicon Materials Kanagawa	Kanagawa	B	32-40	2001

‘S’˜ŽÒ–¼	˜_•¶–¼
N. Kasae, A. Mori, B. B. Laird, Y. Kangawa, T. Ito, and A. Koukitu	Monte Calro Simulation Study on Alloy Phase Diagram of InGaN Thin Film on Substrates
‰ï‹c–¼	ŠJÃêŠ	˜_•¶”Ô†	ƒy[ƒW	”s”N
13th International Conference on Crystal Growth (ICCG-13)	Kyoto	03a-SB2-24	423	2001

‘S’˜ŽÒ–¼	˜_•¶–¼
Nobuhide Kasae, Atsushi Mori, Brian B. Laird, Yoshihiro Kangawa, Tomonori Ito, and Akinori Koukitu	Monte Carlo Simulation Study on Alloy Phase diagram of InGaN Thin film on Substrates
‰ï‹c–¼	ŠJÃêŠ	˜_•¶”Ô†	ƒy[ƒW	”s”N
The 13th Int. Conf. on Crystal Growth (ICCG-13/ICVGE-11)	Kyoto, Japan	03a-SB2-24	423-423	2001

‘S’˜ŽÒ–¼	˜_•¶–¼
Noriko Akutsu, Yasuhiro Akutsu and Takao Yamamoto	Statistical Mechanics of Vicinal Surface with Adsorption (Invited )
‰ï‹c–¼	ŠJÃêŠ	˜_•¶”Ô†	ƒy[ƒW	”s”N
The Thirteenth International Conference on Crystal Growth	Kyoto, Japan	31p-K25-01	???	2001

‘S’˜ŽÒ–¼	˜_•¶–¼
R. Kato, M. Uwaha and Y. Saito	Step Wandering due to the Difference in the Diffusion Coefficient on the Upper and Lower Terraces
‰ï‹c–¼	ŠJÃêŠ	˜_•¶”Ô†	ƒy[ƒW	”s”N
The 13th International Conference on Crystal Growth	Kyoto	02a-SB1-07	295	2001

‘S’˜ŽÒ–¼	˜_•¶–¼
S. Ibuka and M. Tajima	Characterization of SOI wafers by temporal decay measurement of condensate luminescence
‰ï‹c–¼	ŠJÃêŠ	˜_•¶”Ô†	ƒy[ƒW	”s”N
2001 IEEE International SOI Conference	Durango	P3	37-38	2001

‘S’˜ŽÒ–¼	˜_•¶–¼
S. Ibuka, M. Tajima and A. Ogura	Characterization of optical lifetime in silicon-on-insulator wafers by photoluminescence decay method
‰ï‹c–¼	ŠJÃêŠ	˜_•¶”Ô†	ƒy[ƒW	”s”N
Material Research Society Symp.	San Francisco	I9.5	I9.6.1-I9.6.6	2001

‘S’˜ŽÒ–¼	˜_•¶–¼
S. Miyashita, Y. Saito and M. Uwaha	Fractal Aggregation Growth and the Surrounding Diffusion Field
‰ï‹c–¼	ŠJÃêŠ	˜_•¶”Ô†	ƒy[ƒW	”s”N
The 13th International Conference on Crystal Growth	Kyoto	01p-K25-09	174	2001

‘S’˜ŽÒ–¼	˜_•¶–¼
T. Hasegawa, A. Koukitu, and Y. Kumagai	A Quadratic Convergence Method for MOVPE Thermodynamic Analysis
‰ï‹c–¼	ŠJÃêŠ	˜_•¶”Ô†	ƒy[ƒW	”s”N
13th International Conference on Crystal Growth (ICCG-13)	Kyoto	02a-SB3-16	320	2001

‘S’˜ŽÒ–¼	˜_•¶–¼
T. Matsumoto, Y. Yamanaka and N. Inoue	Measurement of Nitrogen in CZ Silicon
‰ï‹c–¼	ŠJÃêŠ	˜_•¶”Ô†	ƒy[ƒW	”s”N
Proc. Forum Sci. & Technol.Silicon Materials Kanagawa	Kanagawa	B	63-72	2001

‘S’˜ŽÒ–¼	˜_•¶–¼
T. Mitate, Y. Sonoda, K. Oki, N. Kuwano, Y. Kumagai, H. Murakami and A. Koukitu	Transmission Electron Microscope Analysis of Microstructures in GaN Grown on (111)A and (111)B of GaAs by Metalorganic Hydrogen Chloride Vapor-Phase Epitaxy
‰ï‹c–¼	ŠJÃêŠ	˜_•¶”Ô†	ƒy[ƒW	”s”N
The Fourth International Conference on Nitride Semiconductors (ICNS-4)	Denver	P20.21	75	2001

‘S’˜ŽÒ–¼	˜_•¶–¼
Takayoshi Shimura, Takuji Hosoi, Kazunori Fukuda, and Masataka Umeno	Existence of an Epitaxially Ordered Phase in the Buried Oxide of SIMOX Wafers
‰ï‹c–¼	ŠJÃêŠ	˜_•¶”Ô†	ƒy[ƒW	”s”N
The 9th International Meeting of Gettering and Defect Engineering in Semiconductor Technology	S.Tecla, Italy	???	485-490	2001

‘S’˜ŽÒ–¼	˜_•¶–¼
Y. Kumagai, H. Murakami, H. Seki and A. Koukitu	Comparison of GaN Buffer Layers Grown on GaAs (111)A and (111)B Surfaces
‰ï‹c–¼	ŠJÃêŠ	˜_•¶”Ô†	ƒy[ƒW	”s”N
The Fourth International Conference on Nitride Semiconductors (ICNS-4)	Denver	P9.2	41	2001

‘S’˜ŽÒ–¼	˜_•¶–¼
Y. Kumagai, K. Takemoto, H. Seki, A. Koukitu	Thick and high quality GaN growth on GaAs (111)A surfaces for preparation of freestanding GaN substratesiPlenary Paper, Invitedj
‰ï‹c–¼	ŠJÃêŠ	˜_•¶”Ô†	ƒy[ƒW	”s”N
Frontier Science Research Conference in Science and Technology of Crystal and Epitaxial Growth (FSRC-2001)	La Jolla, California	???	33-37	2001

‘S’˜ŽÒ–¼	˜_•¶–¼
Y. Matsuo, Y. Kumagai, T. Irisawa and A. Koukitu	Ab initio Calculations of GaN Initial Growth Processes on GaAs(111)A and GaAs(111)B Surfaces
‰ï‹c–¼	ŠJÃêŠ	˜_•¶”Ô†	ƒy[ƒW	”s”N
The Fourth International Conference on Nitride Semiconductors (ICNS-4)	Denver	P9.4	41	2001

‘S’˜ŽÒ–¼	˜_•¶–¼
Y. Matsuo, Y. Kumagai, T. Irisawa and A. Koukitu	Comparison of GaN Growth Processes on GaAs (111)A and (111)B Substrates Studied by ab initio Calculation
‰ï‹c–¼	ŠJÃêŠ	˜_•¶”Ô†	ƒy[ƒW	”s”N
13th International Conference on Crystal Growth (ICCG-13)	Kyoto	02a-SB2-08	305	2001

‘S’˜ŽÒ–¼	˜_•¶–¼
Y. Yamanaka, H. Harada, K. Tanahasi, T. Mikayama, and N. Inoue	Infrared absorption analysis of nitrogen in Czochralski silicon
‰ï‹c–¼	ŠJÃêŠ	˜_•¶”Ô†	ƒy[ƒW	”s”N
Proc. Gettering and Defect Engineering in Semiconductor Technology	Rimini (Italy)	???	63-68	2001

‘S’˜ŽÒ–¼	˜_•¶–¼
Yoshinori Furukawa and Etsuro Yokoyama	Ice crystal pattern formation under gravity and microgravity conditions
‰ï‹c–¼	ŠJÃêŠ	˜_•¶”Ô†	ƒy[ƒW	”s”N
Proceedings of the 1st International Symposium on Microgarvity Research and Applications in Physical Sciences and Biotechnology	Sorrento	ESP SP-454	465-471	2001

‘S’˜ŽÒ–¼	˜_•¶–¼
A. Koukitu, Y. Kumagai and H. Seki	Thermodynamic Analysis of the MOVPE Growth of InAlN
‰ï‹c–¼	ŠJÃêŠ	˜_•¶”Ô†	ƒy[ƒW	”s”N
Third International Symposium on Blue Laser and Light Emitting Diodes (ISBLLED 2000)	Berlin, Germany	???	115-120	2000

‘S’˜ŽÒ–¼	˜_•¶–¼
A. Koukitu, Y. Kumagai and H. Seki	Thermodynamic analysis of the MOVPE growth of InGaAlN quaternary alloy
‰ï‹c–¼	ŠJÃêŠ	˜_•¶”Ô†	ƒy[ƒW	”s”N
The Tenth International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE - X)	Sapporo	We-P39	271	2000

‘S’˜ŽÒ–¼	˜_•¶–¼
H. Harada , K. Tanahashi , A. Koukitsu , T. Mikayama and N. Inoue	Valence force field analysis of nitrogen in si‚Œicon
‰ï‹c–¼	ŠJÃêŠ	˜_•¶”Ô†	ƒy[ƒW	”s”N
Proc. Electrochem. Soc. 2000 Fall Meeting gHigh Purity Si‚Œicon ‡Yh	Phoenix	No.679	97-102	2000

‘S’˜ŽÒ–¼	˜_•¶–¼
K.Tanahashi , H.Harada, Y.Matsuo, A.Koukitsu and N. Inoue	Effect of stress on nitrogen doping in Silicon
‰ï‹c–¼	ŠJÃêŠ	˜_•¶”Ô†	ƒy[ƒW	”s”N
3rd Int. Symp. Adv. Sci. Technol. Silicon Materials	Kona(Hawaii)	???	592-604	2000

‘S’˜ŽÒ–¼	˜_•¶–¼
M. Tajima, S. Ibuka, J. Takiguchi, A. Mizoguchi and A. Ogura	Photoluminescence analysis of annealing process in low-dose SIMOX wafers
‰ï‹c–¼	ŠJÃêŠ	˜_•¶”Ô†	ƒy[ƒW	”s”N
2000 IEEE International SOI Conference	Wakefield	P6	44-45	2000

‘S’˜ŽÒ–¼	˜_•¶–¼
M. Uwaha, M. Sato and Y. Saito	Drift-Induced Instabilities of Steps in a Vicinal Face---Effect of Step Permeability (invited)
‰ï‹c–¼	ŠJÃêŠ	˜_•¶”Ô†	ƒy[ƒW	”s”N
The International Symposium on Surface and Interface---Properties of Different Symmetry Crossing---2000	Nagoya	???	???	2000

‘S’˜ŽÒ–¼	˜_•¶–¼
M. Uwaha, M. Sato and Y. Saito	Instabilities of Permeable Steps Induced by the Drift of Adatoms (invited)
‰ï‹c–¼	ŠJÃêŠ	˜_•¶”Ô†	ƒy[ƒW	”s”N
Japan-US Seminar on Mesoscopic Phenomena on Surfaces	Park City(United Sta	???	???	2000

‘S’˜ŽÒ–¼	˜_•¶–¼
N. Inoue	Characterization of grown-in defects in Si crystals-To understand the behavior of point defects and impurities at the growth interface (Invited)
‰ï‹c–¼	ŠJÃêŠ	˜_•¶”Ô†	ƒy[ƒW	”s”N
3rd Int. Symp. Adv. Sci. Technol. Silicon Materials	Kona(Hawaii)	???	472-483	2000

‘S’˜ŽÒ–¼	˜_•¶–¼
Nobuhide Kasae, Atsushi Mori, Tomoichiro Toyama, and Tomonori Ito	Searching the Boundary of Immiscbility Region of InGaN Semiconductor Alloy by Monte Carlo Simulations
‰ï‹c–¼	ŠJÃêŠ	˜_•¶”Ô†	ƒy[ƒW	”s”N
The 1st Asian Conf. on Crystal Growth and Crystal Technology(IGCT-13)	Sendai, Japan	T-P-139	573-574	2000

‘S’˜ŽÒ–¼	˜_•¶–¼
S. Okubo, H. Ohta, Y. Nakashima, H. Nakayama and T. Nishino	Magnetooptical investigation of heavily doped Si:Mn
‰ï‹c–¼	ŠJÃêŠ	˜_•¶”Ô†	ƒy[ƒW	”s”N
Proc. of Frontier in Magnetism 99	???	???	???	2000

‘S’˜ŽÒ–¼	˜_•¶–¼
T. Ohachi,J. M. Feng, and K. Asai	Orientation and Arsenic Pressure Dependence of Ga Desorption from MBE GaAs Substrates
‰ï‹c–¼	ŠJÃêŠ	˜_•¶”Ô†	ƒy[ƒW	”s”N
Proceedings of the 4th Symp. Atomic Scale and Interface DynamicsMarch	???	???	361-364	2000

‘S’˜ŽÒ–¼	˜_•¶–¼
T. Yamamoto, Y. Akutsu and N. Akutsu	Position Distribution of Steps on Vicinal Surface and Surface Stiffness
‰ï‹c–¼	ŠJÃêŠ	˜_•¶”Ô†	ƒy[ƒW	”s”N
The 1st Asian Conference on Crystal Growth and Crystal Technology	Sendai, Japan	T-P-136	568-568	2000

‘S’˜ŽÒ–¼	˜_•¶–¼
Takayoshi Shimura, Takuji Hosoi, and Masataka Umeno	Epitaxially Ordered Structure in the Buried Oxide Layer of SIMOX Wafers
‰ï‹c–¼	ŠJÃêŠ	˜_•¶”Ô†	ƒy[ƒW	”s”N
The 4th International Symposium on the Physics and Chemistry of SiO2 and the Si-SiO2 Interface	Toronto, Canada	???	241-249	2000

‘S’˜ŽÒ–¼	˜_•¶–¼
Takayoshi Shimura, Takuji Hosoi, and Masataka Umeno	The 3rd SANKEN International Symposium on Advanced Nanoelectronics: Devices, Materials and Computing
‰ï‹c–¼	ŠJÃêŠ	˜_•¶”Ô†	ƒy[ƒW	”s”N
???	Osaka, Japan	P1-15	128-132	2000

‘S’˜ŽÒ–¼	˜_•¶–¼
Y. Saito	Thermal Fluctuation and Morphological Instabilities on Surfaces (invited)
‰ï‹c–¼	ŠJÃêŠ	˜_•¶”Ô†	ƒy[ƒW	”s”N
CECAM Workshop on Growth, Morphology and Magnetic Properties of Epitaxial Metallic Systems	Lyon(France)	???	???	2000

‘S’˜ŽÒ–¼	˜_•¶–¼
Y. Yamanaka, K. Tanahashi, T. Mikayama, N. Inoue and A. Mori	Nucleation of void defects in CZ silicon
‰ï‹c–¼	ŠJÃêŠ	˜_•¶”Ô†	ƒy[ƒW	”s”N
Proc. Electrochem. Soc. 2000 Fall Meeting gHigh Purity Si‚Œicon ‡Yh	Phoenix	No.677	77-85	2000

‘S’˜ŽÒ–¼	˜_•¶–¼
A. Koukitu	Thermodynamic Study and Monte Carlo Simulation on Phase Separation during MOVPE Growth of InGaNiPlenary Paper, Invitedj
‰ï‹c–¼	ŠJÃêŠ	˜_•¶”Ô†	ƒy[ƒW	”s”N
The Second International Symposium on Control of Semiconductor	Karuizawa	???	???-???	1999

‘S’˜ŽÒ–¼	˜_•¶–¼
A. Koukitu, Y. Kumagai, N. Kubota and H. Seki	Thermodynamic Analysis on the MOVPE Growth of Nitride Semiconductors Using Hydrazine
‰ï‹c–¼	ŠJÃêŠ	˜_•¶”Ô†	ƒy[ƒW	”s”N
The Third International Conference on Nitride Semiconductors (ICNS'99)	216	???	707-712	1999

‘S’˜ŽÒ–¼	˜_•¶–¼
Atsushi Mori, Tomonori Ito, Tomoichiro Toyama, and Nobuhide Kasae	Computational study of InGaN phase separation
‰ï‹c–¼	ŠJÃêŠ	˜_•¶”Ô†	ƒy[ƒW	”s”N
The 2nd International Conference on Advanced Materials Development & Performance	Tokushima, Japan	???	714-717	1999

‘S’˜ŽÒ–¼	˜_•¶–¼
Ellen D. Williams, K. Thuermer, D.-J. Liu, T.L. Einstein, J. D. Weeks, H. Iwasaki, K. Sudo, A. Ichimiya, K. Hayashi, M. Uwaha, K. Watanabe	From Steps to the Meso-Scale: Experimental Observations on Si(111) and (113) (invited)
‰ï‹c–¼	ŠJÃêŠ	˜_•¶”Ô†	ƒy[ƒW	”s”N
International Workshop on Applications and Morphology of Vicinal Surfaces	Hildesheim(Germany)	???	???	1999

‘S’˜ŽÒ–¼	˜_•¶–¼
J. M. Feng, K. Asai, and T.Ohachi	The Effect of Substrate Orientations and As Pressures on AlGaAs/GaAs Quantum Wells in Moleculear Beam Epitaxy
‰ï‹c–¼	ŠJÃêŠ	˜_•¶”Ô†	ƒy[ƒW	”s”N
Extended Abstract of the 18th Electronic Materials Symposium,	Kii-Shirahama	???	45-48	1999

‘S’˜ŽÒ–¼	˜_•¶–¼
J. Ming Feng, C. Hamaguchi, and T. Ohachi	Luminescence of AlGaAs/GaAs asymmetric double quantum wells under intense mid-IR radiations, Proceeding of the SPIE Conference on Terahertz and Gigahertz
‰ï‹c–¼	ŠJÃêŠ	˜_•¶”Ô†	ƒy[ƒW	”s”N
PhotonicsSPIE	3795	???	561-567	1999

‘S’˜ŽÒ–¼	˜_•¶–¼
K. Tanahasi, M. Kikuchi and N. Inoue	Concentration of point defects in growing CZ silicon crystal under the internal stress
‰ï‹c–¼	ŠJÃêŠ	˜_•¶”Ô†	ƒy[ƒW	”s”N
20th Int. Conf. Defects in Semiconductors	Berkley	???	???	1999

‘S’˜ŽÒ–¼	˜_•¶–¼
M. Uwaha	Effect of Crystal Anisotropy on Wandering Instabilities of a Step (invited)
‰ï‹c–¼	ŠJÃêŠ	˜_•¶”Ô†	ƒy[ƒW	”s”N
Sapporo Symposium on Anisotropic Effects in a Crystal Growth Problem and Its Mathematical Analysis	Sapporo	???	???	1999

‘S’˜ŽÒ–¼	˜_•¶–¼
M. Uwaha and M. Sato	Effect of Anisotropy on Wandering Instabilities of a Step (invited)
‰ï‹c–¼	ŠJÃêŠ	˜_•¶”Ô†	ƒy[ƒW	”s”N
Japan-Netherlands Joint Symposium on Crustal Growth: Theory and In-Situ Measurements	Zeist(Netherlands)	???	???	1999

‘S’˜ŽÒ–¼	˜_•¶–¼
M.Kikuchi, N.Inoue and K.Tanahashi	Point defect generation by the stress due to impurity doping in Si crystal
‰ï‹c–¼	ŠJÃêŠ	˜_•¶”Ô†	ƒy[ƒW	”s”N
Defects in Silicon III (The Electrochemical Society, Pennington, 1999) .	Seattle	Ab.356	491-498	1999

‘S’˜ŽÒ–¼	˜_•¶–¼
N. Akustu, Y. Akustu and T. Yamamoto	STATISTICAL MECHANICS OF VICINAL SURFACE WITH ADSORPTION
‰ï‹c–¼	ŠJÃêŠ	˜_•¶”Ô†	ƒy[ƒW	”s”N
The 3rd Tohwa University International Conference on Statistical Physics	Fukuoka, Japan	GMT-P9	347-349	1999

‘S’˜ŽÒ–¼	˜_•¶–¼
N.Inoue, K.Tanahashi and A.Mori	Point defect behavior in growing silicon crystal
‰ï‹c–¼	ŠJÃêŠ	˜_•¶”Ô†	ƒy[ƒW	”s”N
Proc. Kazusa Akademia Park Forum on Sci. and Technol. Silicon Materials	Chiba	???	31-39	1999

‘S’˜ŽÒ–¼	˜_•¶–¼
T. Ohachi , J. M. Feng, M. Tateuchi, K. Asai, M.Uwani, P.O.Vaccaro, and K.Fujita	Arsenic Pressure Dependence of Gs Desorption from MBE High Index GaAs Substrates
‰ï‹c–¼	ŠJÃêŠ	˜_•¶”Ô†	ƒy[ƒW	”s”N
Proceeding of the Third Symposium on Atomic-scale Surface and Interface Dynamics	???	???	201-203	1999

‘S’˜ŽÒ–¼	˜_•¶–¼
T. Taki, A. Koukitu, H. Seki	Investigation of thichness dependence of hexagonal component in cubic GaN film growth on GaAs (001) by MOVPE
‰ï‹c–¼	ŠJÃêŠ	˜_•¶”Ô†	ƒy[ƒW	”s”N
Blue Laser and Light Emitting Diodes II	Chiba	???	113-116	1999

‘S’˜ŽÒ–¼	˜_•¶–¼
T. Yamamoto	TWO UNIVERSAL RELATIONS IN RELAXATION PROCESS OF THE VICINAL SURFACE
‰ï‹c–¼	ŠJÃêŠ	˜_•¶”Ô†	ƒy[ƒW	”s”N
The 3rd Tohwa University International Conference on Statistical Physics	Fukuoka, Japan	GMPT-P7	341-343	1999

‘S’˜ŽÒ–¼	˜_•¶–¼
Takayoshi Shimura, Takuji Hosoi, and Masataka Umeno	Analysis of Ordered Structure of Buried Oxide Layers in SIMOX Wafers
‰ï‹c–¼	ŠJÃêŠ	˜_•¶”Ô†	ƒy[ƒW	”s”N
The 9th International Symposium on Silicon-on-Insulator Technology and Devices	Seatle, USA	???	155-160	1999

‘S’˜ŽÒ–¼	˜_•¶–¼
Y. Kumagai, M. Mayumi, A. Koukitu and H. Seki	In situ gravimetric monitoring of halogen transport atomic layer epitaxy of cubic-GaN
‰ï‹c–¼	ŠJÃêŠ	˜_•¶”Ô†	ƒy[ƒW	”s”N
The Third International Symposium on the Control of Semiconductor Interface (ISCSI - 3)	Karuizawa	???	427-431	1999

‘S’˜ŽÒ–¼	˜_•¶–¼
A. Koukitu, T. Taki, K. Narita, H. Seki	In situ monitoring of arsenic desorption on GaAs (111)B surface in atomic layer epitaxy
‰ï‹c–¼	ŠJÃêŠ	˜_•¶”Ô†	ƒy[ƒW	”s”N
The Twelfth International Conference on Crystal Growth (ICCG12)	Jerusalem, Israel	???	1111-1118	1998

‘S’˜ŽÒ–¼	˜_•¶–¼
A. Ogura and M. Tajima	Oxygen precipitates and related defects in SOI substrate fabricated by wafer bonding and H+ splitting
‰ï‹c–¼	ŠJÃêŠ	˜_•¶”Ô†	ƒy[ƒW	”s”N
1998 Int. Conf. on Solid State Devices and Materials,	Hiroshima	B-6-4	300-301	1998

‘S’˜ŽÒ–¼	˜_•¶–¼
Jin-Song Li and Kazumi Nishioka	Steady state nucleation-flux profile in binary systems
‰ï‹c–¼	ŠJÃêŠ	˜_•¶”Ô†	ƒy[ƒW	”s”N
The 72th ACS Colloid &Surface Science Symposium	Pennsylvania, USA	???	???-???	1998

‘S’˜ŽÒ–¼	˜_•¶–¼
K. Kawai, M. Uwaha and K. Nishino	Changes of Growth Velocity and Morphlogy with Increasing Supersaturation
‰ï‹c–¼	ŠJÃêŠ	˜_•¶”Ô†	ƒy[ƒW	”s”N
The 12th International Conference on Crystal Growth	Jerusalem	PSI-3-1	196	1998

‘S’˜ŽÒ–¼	˜_•¶–¼
K.Tanahashi, and N.Inoue	Nonequilibrium thermodynamic analysis on the behavior of point defect in growing silicon crystals
‰ï‹c–¼	ŠJÃêŠ	˜_•¶”Ô†	ƒy[ƒW	”s”N
Proc. 2nd Int. Conf. Materials For Microelectronics, pp. 52	Bordeaux	???	52-52	1998

‘S’˜ŽÒ–¼	˜_•¶–¼
Lev N. Balykov, Masao Kitamura, Igor L. Maksimov, and Kazumi Nishioka	Dynamics of Non-equilibrium Step Structure
‰ï‹c–¼	ŠJÃêŠ	˜_•¶”Ô†	ƒy[ƒW	”s”N
The 12th Int. Conf. On Crystal Growth	Jerusalem, Israel	???	176-176	1998

‘S’˜ŽÒ–¼	˜_•¶–¼
M. Ozawa, P.O. Vaccaro, K. Fujita and T.Ohachi	Light Emission from Lateral p-n Jnction (311) A GaAs-AlGaAs Multi Quantum Well on Patterned Substrate by MBE
‰ï‹c–¼	ŠJÃêŠ	˜_•¶”Ô†	ƒy[ƒW	”s”N
Extended Abstract of the 17th Electronic Materials Symposium,	???	???	221-222	1998

‘S’˜ŽÒ–¼	˜_•¶–¼
M. Sato and M. Uwaha	Change of Wandering Pattern with the Anisotropy in Step Kinetics
‰ï‹c–¼	ŠJÃêŠ	˜_•¶”Ô†	ƒy[ƒW	”s”N
The 12th International Conference on Crystal Growth	Jerusalem	M01-4	5	1998

‘S’˜ŽÒ–¼	˜_•¶–¼
M. Sato and M. Uwaha	Growth Law of a Step Band in the Bunching by Electric Current
‰ï‹c–¼	ŠJÃêŠ	˜_•¶”Ô†	ƒy[ƒW	”s”N
The 12th International Conference on Crystal Growth	Jerusalem	M01-5	6	1998

‘S’˜ŽÒ–¼	˜_•¶–¼
M. Tajima and A. Ogura	Defect characterization in Unibond wafers by photoluminescence spectroscopy and transmission electron microscopy
‰ï‹c–¼	ŠJÃêŠ	˜_•¶”Ô†	ƒy[ƒW	”s”N
1998 IEEE International SOI Conference	Stuart	8.2	139-140	1998

‘S’˜ŽÒ–¼	˜_•¶–¼
M. Uwaha	Effect of Crystal Anisotropy on the Flow-Induced Instability of Solid-Superfluid Interface of 4He
‰ï‹c–¼	ŠJÃêŠ	˜_•¶”Ô†	ƒy[ƒW	”s”N
The 12th International Conference on Crystal Growth	Jerusalem	PSI-3-2	196	1998

‘S’˜ŽÒ–¼	˜_•¶–¼
Y. Matsui and M. Uwaha	Nonlinear Effect on the Flow-Induced Instability of Steps in Solution Growth (invited)
‰ï‹c–¼	ŠJÃêŠ	˜_•¶”Ô†	ƒy[ƒW	”s”N
The 12th International Conference on Crystal Growth	Jerusalem	M01-2	4	1998

‘S’˜ŽÒ–¼	˜_•¶–¼
Y. Nakashima, H. Ohta, S. Okubo, T. Arioka, H. Nakayama and T. Nishino	High field ESR measurement of heavily doped Si:Mn
‰ï‹c–¼	ŠJÃêŠ	˜_•¶”Ô†	ƒy[ƒW	”s”N
Proc. of Physical Phenomena at High Magnetic Fields-III	???	???	92-95	1998

‘S’˜ŽÒ–¼	˜_•¶–¼
A. Koukitu and H. Seki	Thermodynamic study on phase separation during MOVPE growth of InxGa1-xN
‰ï‹c–¼	ŠJÃêŠ	˜_•¶”Ô†	ƒy[ƒW	”s”N
The Second International Conference on Nitride Semiconductors (ICNS2)	Tokushima, Japan	???	13-18	1997

‘S’˜ŽÒ–¼	˜_•¶–¼
M. Tajima, S. Ibuka and M. Warashina	Luminescence due to electron-hole condensation in silicon-on-insulator and it's application to defect and interface characterization
‰ï‹c–¼	ŠJÃêŠ	˜_•¶”Ô†	ƒy[ƒW	”s”N
19th International Conference on Defects in Semiconductors	Averio	P2-124	1731-1736	1997

‘S’˜ŽÒ–¼	˜_•¶–¼
N. Takahashi, R. Matsumoto, A. Koukitu and H. Seki	Growth of GaN on GaAs(111)B by Metalorganic Hydrogen Chloride VPE Using Double Buffer Layer
‰ï‹c–¼	ŠJÃêŠ	˜_•¶”Ô†	ƒy[ƒW	”s”N
The Second International Conference on Nitride Semiconductors (ICNS2)	Tokushima, Japan	???	37-41	1997

‘S’˜ŽÒ–¼	˜_•¶–¼
S. Ibuka and M. Tajima	Defect recognition in silicon-on-insulator wafers using electron-hole condensation under ultraviolet light excitation
‰ï‹c–¼	ŠJÃêŠ	˜_•¶”Ô†	ƒy[ƒW	”s”N
Defect Recognition and Image Processing in Semiconductors (DRIP VII)	Templin	2.3	111-114	1997

‘S’˜ŽÒ–¼	˜_•¶–¼
T. Ogawa, G. Kissinger and N. Nango,	Light scattering tomography for characterization of semiconductors (Invited),
‰ï‹c–¼	ŠJÃêŠ	˜_•¶”Ô†	ƒy[ƒW	”s”N
Diagnostic Techniques for Semiconductor Materials and Devices,	Montreal, Canada,	The Electro-Chemical	132-146	1997

‘S’˜ŽÒ–¼	˜_•¶–¼
Takao Yamamoto	Capillary Wave Approach to Relaxation Process of the Vicinal Surface and its Application to Analysis of the Surface Stiffness
‰ï‹c–¼	ŠJÃêŠ	˜_•¶”Ô†	ƒy[ƒW	”s”N
2nd Tohwa University International Meeting	Fukuoka, Japan	GMT-P5	115-115	1997

C.’˜‘iBooksj

‘S’˜ŽÒ–¼	‘–¼
ã‰H–q•v	ƒVƒŠ[ƒY:Œ‹»¬’·‚Ìƒ_ƒCƒiƒ~ƒNƒX ‘æ2ŠªuŒ‹»¬’·‚Ì‚µ‚‚Ý‚ð’T‚év
o”ÅŽÒ–¼	o”ÅêŠ	ISBN”Ô†	ƒy[ƒW	”s”N
‹¤—§o”Å	“Œ‹ž	ISBN4-320-03411-2	1-180	2002

‘S’˜ŽÒ–¼	‘–¼
Makio Uwaha	Series: Dynamics of Crystal Growth, Vol.2 "Searching for Mechanism of Crystal Growth"
o”ÅŽÒ–¼	o”ÅêŠ	ISBN”Ô†	ƒy[ƒW	”s”N
Kyoritsu Publishing	Tokyo	ISBN4-320-03411-2	1-180	2002

‘S’˜ŽÒ–¼	‘–¼
“üàVŽõ”ü	‰ž—p•¨—ƒnƒ“ƒhƒuƒbƒNi‰ž—p•¨—Šw‰ï@•Òj
o”ÅŽÒ–¼	o”ÅêŠ	ISBN”Ô†	ƒy[ƒW	”s”N
ŠÛ‘P	“Œ‹ž	ISBN4-621-04955-0	???	2002

‘S’˜ŽÒ–¼	‘–¼
T.Irisawa	Handbook of Applied Physics(ed. By The Japan Society of Applied Physics)
o”ÅŽÒ–¼	o”ÅêŠ	ISBN”Ô†	ƒy[ƒW	”s”N
Maruzenn	Tokyo	ISBN4-621-04955-0	???	2002

‘S’˜ŽÒ–¼	‘–¼
“üàVŽõ”ü	ƒZƒ‰ƒ~ƒbƒNHŠwƒnƒ“ƒhƒuƒbƒNi“ú–{ƒZƒ‰ƒ~ƒbƒNƒX‹¦‰ï@•Òj
o”ÅŽÒ–¼	o”ÅêŠ	ISBN”Ô†	ƒy[ƒW	”s”N
‹Z•ñ“°	“Œ‹ž	ISBNF4-7655-0032-2	???	2002

‘S’˜ŽÒ–¼	‘–¼
T.Irisawa	Handbook of Ceramicied. By The Ceramic Society of Japanj
o”ÅŽÒ–¼	o”ÅêŠ	ISBN”Ô†	ƒy[ƒW	”s”N
gihoudou	Tokyo	ISBNF4-7655-0032-2	???	2002

‘S’˜ŽÒ–¼	‘–¼
ã–ã’–¾”Œ	ŠE–Êƒnƒ“ƒhƒuƒbƒNi•ÒŽÒFŠâàVN—Tj
o”ÅŽÒ–¼	o”ÅêŠ	ISBN”Ô†	ƒy[ƒW	”s”N
ƒGƒkEƒeƒB[EƒGƒX	“Œ‹ž	ISBN4-900830-87-9	530-540	2001

‘S’˜ŽÒ–¼	‘–¼
A. Koukitu	Handbook of Interfaces : Chemistry and EngineeringiEditor : Yasuhiro Iwasawaj
o”ÅŽÒ–¼	o”ÅêŠ	ISBN”Ô†	ƒy[ƒW	”s”N
NTS Inc.	???	ISBN4-900830-87-9	530-540	2001

‘S’˜ŽÒ–¼	‘–¼
M. Uwaha	Fundamentals and applications of crystal growth research and technology (Editor: K. Sato, K. Nakajima and Y. Furukawa)
o”ÅŽÒ–¼	o”ÅêŠ	ISBN”Ô†	ƒy[ƒW	”s”N
Elsevier	Amsterdam	ISBN0-444-50747-7	78-99	2001

‘S’˜ŽÒ–¼	‘–¼
âV“¡K•vCã‰H–q•vCˆ¢‹v’Ã“TŽqC—L”n‹`NCˆäã’¼‹vC“üàVŽõ”üC‘å”«’‰C¬ì’qÆCã–ã’–¾”ŒCiŒÌj¼‰ªˆê…	Œ‹»¬’·ŠwŽ«“T(»ìˆê˜Y‘¼•Ò)
o”ÅŽÒ–¼	o”ÅêŠ	ISBN”Ô†	ƒy[ƒW	”s”N
‹¤—§o”Å	“Œ‹ž	ISBN4-320-03405-8	???	2001

‘S’˜ŽÒ–¼	‘–¼
Yukio Saito, Makio Uwaha, Noriko Akutsu, Yoshiyasu Arima, Naohisa Inoue, Toshiharu Irisawa, Tadashi Ohachi, Tomoya Ogawa, Akinori Koukitsu and Kazumi Nishioka	Dictionary of Crystal Growth (Editor: Ichiro Sunagawa et al.)
o”ÅŽÒ–¼	o”ÅêŠ	ISBN”Ô†	ƒy[ƒW	”s”N
Kyoritsu Publishing	Tokyo	ISBN4-320-03405-8	???	2001

‘S’˜ŽÒ–¼	‘–¼
–¼ŽæWŽqi›–ì‘ì—YAì¼„@•Òj	”¼“±‘Ì‘åŽ«“T
o”ÅŽÒ–¼	o”ÅêŠ	ISBN”Ô†	ƒy[ƒW	”s”N
H‹Æ’²¸‰ï	Tokyo	ISBN4-7693-7082-2	152-158	1999

‘S’˜ŽÒ–¼	‘–¼
A.Natori(Editor: T.Sugano, T.Kawanishi)	Semiconductor large dictionary
o”ÅŽÒ–¼	o”ÅêŠ	ISBN”Ô†	ƒy[ƒW	”s”N
Kogyo Chosakai Publishing Co., Ltd.	Tokyo	ISBN4-7693-7082-2	152-158	1999

‘S’˜ŽÒ–¼	‘–¼
ã–ã’–¾”ŒCŠÖšæ	ƒAƒhƒoƒ“ƒXƒgEƒGƒŒƒNƒgƒƒjƒNƒXƒVƒŠ[ƒYI-21 III‘°’‚‰»•¨”¼“±‘Ìi•ÒŽÒFÔè—Ej
o”ÅŽÒ–¼	o”ÅêŠ	ISBN”Ô†	ƒy[ƒW	”s”N
”\|•—ŠÙ	“Œ‹ž	ISBN4-563-03621-8	67-112	1999

‘S’˜ŽÒ–¼	‘–¼
A. KoukituCHisashi Seki	???iEditorFI. Akasakij
o”ÅŽÒ–¼	o”ÅêŠ	ISBN”Ô†	ƒy[ƒW	”s”N
Baifukan	Tokyo	ISBN4-563-03621-8	67-112	1999

‘S’˜ŽÒ–¼	‘–¼
ŠÖšæCã–ã’–¾”Œ	¶‘ÌEŠÂ‹«Œv‘ª‚ÖŒü‚¯‚½‹ßÔŠOŒõƒZƒ“ƒVƒ“ƒO‹Zpi•ÒŽÒF’\|–{‹e˜NCŠÖšæC–q“à³’jC‚‹´G•vj
o”ÅŽÒ–¼	o”ÅêŠ	ISBN”Ô†	ƒy[ƒW	”s”N
ƒTƒCƒGƒ“ƒXƒtƒH[ƒ‰ƒ€ŽÐ	“Œ‹ž	ISBN4-916164-24-5	49-52, 60-65	1999

‘S’˜ŽÒ–¼	‘–¼
A.KoukituCH. Seki	???iEditorFK. Takemoto, H. Seki, M. Makiuchi, H. Takahashi j
o”ÅŽÒ–¼	o”ÅêŠ	ISBN”Ô†	ƒy[ƒW	”s”N
Science forum	Tokyo	ISBN4-916164-24-5	49-52, 60-65	1999

‘S’˜ŽÒ–¼	‘–¼
H. Mueller-Krumbhaar and Y. Saito	Computational Methods in Colloid and Interface Science (Editor: M. Borowko)
o”ÅŽÒ–¼	o”ÅêŠ	ISBN”Ô†	ƒy[ƒW	”s”N
Marcel Dekker	???	ISBN0-8247-0323-5	851-932	1999

‘S’˜ŽÒ–¼	‘–¼
¬ì’qÆ	Œ‹»HŠw‚ÌŠî‘bi‘æ‚P”Åj
o”ÅŽÒ–¼	o”ÅêŠ	ISBN”Ô†	ƒy[ƒW	”s”N
Ö‰Ø–[	“Œ‹ž	ISBN4-7853-2509-7	1-326	1998

‘S’˜ŽÒ–¼	‘–¼
Tomoya Ogawa	Fundamentals on Crystal Technology
o”ÅŽÒ–¼	o”ÅêŠ	ISBN”Ô†	ƒy[ƒW	”s”N
Shoukabou	Tokyo	ISBN4-7853-2509-7	1-326	1998

‘S’˜ŽÒ–¼	‘–¼
Ogawa Tomoya	Kesshou Buturi Kogaku [¬ì’qÆAŒ‹»•¨—HŠw, Ö‰Ø–[‚ÌŠØ‘Œê (ƒnƒ“ƒOƒ‹) ”Å]]
o”ÅŽÒ–¼	o”ÅêŠ	ISBN”Ô†	ƒy[ƒW	”s”N
Dae Woog Phb. Co. S Soeul	Korea	???	1- 313	1998

‘S’˜ŽÒ–¼	‘–¼
Takao Yamamoto	STATISTICAL PHYSICS: Experiments, Theories and Computer Simulations. (Editors: M. Tokuyama and I. Oppenheim)
o”ÅŽÒ–¼	o”ÅêŠ	ISBN”Ô†	ƒy[ƒW	”s”N
World Scientific Publishing Co. Pte. Ltd	Singapore, New Jerse	ISBN 981-02-3379-5	115-115	1998

‘S’˜ŽÒ–¼	‘–¼
T.Yamamoto, N.Akutsu, Y.Akutsu, M.Uwaha, Y.Saito, A.Natori, T.irisawa, Y. Arima, A.Kokitsu, H.Nakayama, T.ohachi, M.Umeno,,T.Ogawa (ed. by T. Nishinaga, K. Nishioka, J. Harada, A. Sasaki, H. Takei)	Advances in the understanding of crystal growth mechanism
o”ÅŽÒ–¼	o”ÅêŠ	ISBN”Ô†	ƒy[ƒW	”s”N
Elsevier Science Ltd.	North-Holland	ISBN0-444-82504-5	???	1997

‘S’˜ŽÒ–¼	‘–¼
ã‰H–q•vC“üàVŽõ”üCâV“¡K•vCiŒÌj¼‰ªˆê…	Œ‹»¬’·‚ÌŠî‘b (¼‰ièñ•Ò)
o”ÅŽÒ–¼	o”ÅêŠ	ISBN”Ô†	ƒy[ƒW	”s”N
”\|•—ŠÙ	“Œ‹ž	ISBN4-563-03618-8	???	1997

‘S’˜ŽÒ–¼	‘–¼
Makio Uwaha, Toshiharu Irisawa, Yukio Saito, Kazumi, Nishioka	Fandamentals of Crystal Growth (Editor: Tatau Nishinaga)
o”ÅŽÒ–¼	o”ÅêŠ	ISBN”Ô†	ƒy[ƒW	”s”N
Baifukan	Tokyo	ISBN4-563-03618-8	???	1997

–ß‚é

Œ¤‹†„i•ª–ì–¼	@	Œ´ŽqƒXƒP[ƒ‹•\–ÊEŠE–Êƒ_ƒCƒiƒ~ƒNƒX
@
Œ¤‹†ƒvƒƒWƒFƒNƒg–¼	@	¬’·•\–ÊEŠE–Ê‚Ì“®“I‹““®‚ÆŒ´ŽqƒXƒP[ƒ‹ƒVƒ~ƒ…ƒŒ[ƒVƒ‡ƒ“
@
i‰p•¶–¼j	@	Dynamic Behavior of Grown Surface and Interface, and Atomic Scale Simulation
@
Œ¤‹†ŠúŠÔ	@	•½¬‚X”N“x ` •½¬‚P‚R”N“x

ƒvƒƒWƒFƒNƒgEƒŠ[ƒ_[–¼		Œ¤‹†Œo”ï		‚S‚W‚PC‚O‚T‚Xç‰~
Ž–¼EŠ‘®Œ¤‹†‹@ŠÖ Š‘®•”‹ÇEE–¼	“üàVŽõ”ü EŠwK‰@‘åŠw EŒvŽZ‹@ƒZƒ“ƒ^[ E‹³Žö	“à–ó	•½¬@‚X”N“x	‚P‚O‚TC‚O‚R‚Wç‰~
			•½¬‚P‚O”N“x	‚W‚VC‚O‚P‚Oç‰~
			•½¬‚P‚P”N“x	‚X‚PC‚O‚P‚Pç‰~
			•½¬‚P‚Q”N“x	‚X‚VC‚O‚O‚Oç‰~
			•½¬‚P‚R”N“x	‚P‚O‚PC‚O‚O‚Oç‰~

Ž–¼	Š‘®‹@ŠÖE•”‹ÇEE	Œ¤‹†ƒvƒƒWƒFƒNƒg‚Å‚Ì–ðŠ„•ª’S
—L”n ‹`N	ˆ¤’mŠw‰@‘åŠwE‹³—{•”E•‹³Žö	C.ƒwƒeƒƒGƒsƒ^ƒLƒV[‚ÆŠjŒ`¬‰ß’ö
–¼Žæ WŽq	“d‹C’ÊM‘åŠwE“d‹C’ÊMŠw•”E‹³Žö	B.ƒXƒeƒbƒv‚Ì‰^“®‚Æ¬’·Œ`‘Ô§Œä D.•\–Ê”½‰ž‰ß’ö‚Æ¬’·§Œä
‘ºŽR”ü²	“ú–{ŠwpU‹»‰ïŒ¤‹†ˆõi•½¬‚P‚P”N‚SŒŽ‚P“ú`•½¬‚P‚Q”N‚RŒŽ‚R‚P“ú‚Ü‚Åj	B.ƒXƒeƒbƒv‚Ì‰^“®‚Æ¬’·Œ`‘Ô§Œä D.•\–Ê”½‰ž‰ß’ö‚Æ¬’·§Œä
‰¡ŽR ‰x˜Y	ŽRŒû‘åŠwHŠw•”E•‹³Žöi•½¬‚P‚O”N‚SŒŽ‚P“ú`•½¬‚P‚S”N‚RŒŽ‚R‚P“ú‚Ü‚Åj	C.ƒwƒeƒƒGƒsƒ^ƒLƒV[‚ÆŠjŒ`¬‰ß’ö
Š¦ì ‹`—T	“ú–{ŠwpU‹»‰ïŒ¤‹†ˆõi•½¬‚P‚Q”N‚SŒŽ‚P“ú`•½¬‚P‚S”N‚RŒŽ‚R‚P“ú‚Ü‚Åj	C.ƒwƒeƒƒGƒsƒ^ƒLƒV[‚ÆŠjŒ`¬‰ß’ö D.•\–Ê”½‰ž‰ß’ö‚Æ¬’·§Œä
ã‰H –q•v	–¼ŒÃ‰®‘åŠwE‘åŠw‰@—ŠwŒ¤‹†‰ÈE•‹³Žö	B.ƒXƒeƒbƒv‚Ì‰^“®‚Æ¬’·Œ`‘Ô§Œä
²“¡ ³‰p	‹à‘ò‘åŠwE—Šw•”¥•Žè	B.ƒXƒeƒbƒv‚Ì‰^“®‚Æ¬’·Œ`‘Ô§Œä
âV“¡ K•v	Œc‰ž‹`m‘åŠwE—HŠw•”E‹³Žöi•½¬‚P‚O”N‚SŒŽ‚P“ú`•½¬‚P‚S”N‚RŒŽ‚R‚P“ú‚Ü‚Åj	B.ƒXƒeƒbƒv‚Ì‰^“®‚Æ¬’·Œ`‘Ô§Œä C.ƒwƒeƒƒGƒsƒ^ƒLƒV[‚ÆŠjŒ`¬‰ß’ö
ŒÌ@¼‰ªˆê…	“¿“‡‘åŠwEHŠw•”E‹³Žöi•½¬‚X”N‚SŒŽ‚P“ú`•½¬‚P‚O”N‚TŒŽ‚Q‚O“ú‚Ü‚Åj	C.ƒwƒeƒƒGƒsƒ^ƒLƒV[‚ÆŠjŒ`¬‰ß’ö
X “ÄŽj	“¿“‡‘åŠwEHŠw•”EuŽt	C.ƒwƒeƒƒGƒsƒ^ƒLƒV[‚ÆŠjŒ`¬‰ß’ö E.”ZŒúŠÂ‹«‘ŠŠE–Ê‚Ì”½‰ž
ˆ¢‹v’Ã“TŽq	‘åã“d‹C’ÊM‘åŠwEHŠw•”E‹³Žö	A.•\–Ê\‘¢Œ`¬‚Ì“Œv—ÍŠw“IŠî‘b—˜_
ˆ¢‹v’Ã‘×O	‘åã‘åŠwE‘åŠw‰@—ŠwŒ¤‹†‰ÈE‹³Žö	A.•\–Ê\‘¢Œ`¬‚Ì“Œv—ÍŠw“IŠî‘b—˜_
“ú‰i“c‘×Œ[	“ú–{ŠwpU‹»‰ïŒ¤‹†ˆõi•½¬‚P‚P”N‚SŒŽ‚P“ú`•½¬‚P‚Q”N‚RŒŽ‚R‚P“ú‚Ü‚Åj	A.•\–Ê\‘¢Œ`¬‚Ì“Œv—ÍŠw“IŠî‘b—˜_
ˆÉ“¡ M	“ú–{ŠwpU‹»‰ïŒ¤‹†ˆõi•½¬‚P2”N‚SŒŽ‚P“ú`•½¬‚P4”N‚RŒŽ‚R‚P“ú‚Ü‚Åj	D.•\–Ê”½‰ž‰ß’ö‚Æ¬’·§Œä
ŽR–{ —²•v	ŒQ”n‘åŠwEHŠw•”E•‹³Žö	A.•\–Ê\‘¢Œ`¬‚Ì“Œv—ÍŠw“IŠî‘b—˜_
ã–ã’ –¾”Œ	“Œ‹ž”_H‘åŠwEHŠw•”E‹³Žö	C.ƒwƒeƒƒGƒsƒ^ƒLƒV[‚ÆŠjŒ`¬‰ß’ö D.•\–Ê”½‰ž‰ß’ö‚Æ¬’·§Œä
’†ŽR O	‘åãŽs—§‘åŠwEHŠw•”E‹³Žö	D.•\–Ê”½‰ž‰ß’ö‚Æ¬’·§Œä
‘å”« ’‰	“¯ŽuŽÐ‘åŠwEHŠw•”E‹³Žöi•½¬‚P‚O”N‚SŒŽ‚P“ú`•½¬‚P‚S”N‚RŒŽ‚R‚P“ú‚Ü‚Åj	D.•\–Ê”½‰ž‰ß’ö‚Æ¬’·§Œä
ég Œ‰–¾	“ú–{ŠwpU‹»‰ïŒ¤‹†ˆõi•½¬‚P‚P”N‚SŒŽ‚P“ú`•½¬‚P‚Q”N‚RŒŽ‚R‚P“ú‚Ü‚Åj	D.•\–Ê”½‰ž‰ß’ö‚Æ¬’·§Œä
Jon T. Nelson	ŠwK‰@‘åŠwEŒvŽZ‹@ƒZƒ“ƒ^[E•Žèi•½¬‚P‚Q”N‚SŒŽ‚P“ú`•½¬‚P‚S”N‚RŒŽ‚R‚P“ú‚Ü‚Åj	D.•\–Ê”½‰ž‰ß’ö‚Æ¬’·§Œä
ˆäã ’¼‹v	‘åã•{—§‘åŠwEæ’[‰ÈŠwŒ¤‹†ŠE‹³Žö	E.”ZŒúŠÂ‹«‘ŠŠE–Ê‚Ì”½‰ž
ŽO‰ÓŽR ‹B	“ú–{ŠwpU‹»‰ïŒ¤‹†ˆõi•½¬‚P‚Q”N‚SŒŽ‚P“ú`•½¬‚P‚S”N‚RŒŽ‚R‚P“ú‚Ü‚Åj	E.”ZŒúŠÂ‹«‘ŠŠE–Ê‚Ì”½‰ž
”~–ì ³—²	‘åã‘åŠwE‘åŠw‰@HŠwŒ¤‹†‰ÈE‹³Žöi•½¬‚X”N‚SŒŽ‚P“ú`•½¬‚P‚Q”N‚RŒŽ‚R‚P“ú‚Ü‚Åj	E.”ZŒúŠÂ‹«‘ŠŠE–Ê‚Ì”½‰ž
¬ì ’qÆ	ŠwK‰@‘åŠwEŒvŽZ‹@ƒZƒ“ƒ^[E‹qˆõ‹³Žö	E.”ZŒúŠÂ‹«‘ŠŠE–Ê‚Ì”½‰ž
“c“‡ “¹•v	‰F’ˆ‰ÈŠwŒ¤‹†ŠE‰q¯‰ž—pHŠwŒ¤‹†ŒnE‹³Žö	E.”ZŒúŠÂ‹«‘ŠŠE–Ê‚Ì”½‰ž
”n •q‰ë	ŠwK‰@‘åŠwEŒvŽZ‹@ƒZƒ“ƒ^[E•Žèi•½¬‚P‚O”N‚PŒŽ1“ú`•½¬‚P‚S”N‚P‚OŒŽ‚R‚P“új	E.”ZŒúŠÂ‹«‘ŠŠE–Ê‚Ì”½‰ž

•½¬‚P‚R”N“x“ú–{ŠwpU‹»‰ï–¢—ˆŠJ‘ñŠwpŒ¤‹†„iŽ–‹ÆŒ¤‹†¬‰Ê•ñ‘ŠT—v

•½¬‚P‚R”N“x“ú–{ŠwpU‹»‰ï–¢—ˆŠJ‘ñŠwpŒ¤‹†„iŽ–‹ÆŒ¤‹†¬‰Ê•ñ‘ŠT—v