| 1.Research Institution | Teikyo University of Science and Technology | |
| 2.University-Industry Cooperative Research Committee | 162nd Committee on Short-wavelength Opto-electronic Devices | |
| 3.Term of Project | FY1996〜FY2000 | |
| 4.Project Number | 96R16201 | |
| 5.Title of Project | Research on Short-Wavelength Semiconductor Optoelectronic Devices for Ultra High-Density and Ultra High-Speed Information Processing |
| Name | Institution,Department | Title of Position |
| Kiyoshi Takahashi | Teikyo University of Science and Technology, Dept. of Media Science | Professor |
7.Core Members
| Names | Institution,Department | Title of Position |
| Akihiko Yoshikawa | Chiba University, Dept. of Electronics and Mechanical Engineering | Professor |
| Fumio Hasegawa | University of Tsukuba, Institute of Applied Physics | Professor |
| Shigeo Fujita | Kyoto University, Dept. of Electronic Science and Engineering | Professor |
8.Cooperating Researchers
| Names | Institution,Department | Title of Position |
| Ryuhei Kimura | Teikyo University of Science and Technology, Dept. of Media Science | Associate Professor |
| Anwei Jia | Chiba University, Dept. of Electronics and Mechanical Engineering | Research Associate |
9.Summary of Research Results
|
In order to achieve the objectives of this research project, two subgroups have been organized; one is Teikyo University-group and another is Chiba University-group. About 10 researchers/members have been included in each subgroup, and each researcher has done their research under their own research objectives. All of the members have completed their research and obtained remarkable results in the areas/topics as followings; (1) Epitaxy, characterization and material control of wide bandgap semiconductors such as III-nitrides and II-VI compounds: (a) epitaxy and material control of cubic-phase nitrides, (b) epitaxy and material control of hexagonal phase nitrides by MOVPE, MBE and HVPE, (c) design and growth of new hexagonal-phase II-VI compounds-based light emitting devices, and (d) characterization and control of crystalline structure polarity in hexagonal-phase wide bandgap semiconductors. (2) Design, fabrication and characterization of quantum well/dots structure by wide bandgap semiconductors; (a) fluctuation of In composition in InGaN/GaN quantum wells and selforganization of In-rich quantum dots, (b) growth and characterization of II-VI compounds quantum wells and quantum dots. (3) Design and characterization of short-wavelength optoelectronic devices/systems; (a) Design and fabrication of GaN-based surface emitting laser diodes, (b) design of ultra fast optical modulators using excitonic effects, (c) design and characterization of violet laser diodes. |
10.Key Words
(1)widegap semiconductors、(2)short wavelength devices、(3)III-nitrides
(4)II-VI compounds、(5)epitaxy、(6)violet laser diodes
(7)surface emitting laser diodes、(8)quantum well/dots structure、(9)ultra fast optical modulators
11.References
| Author | Title of Article | |||
| K. Yamaguchi, Z. X. Qin, H. Nagano, M. Kobayashi, A. Yoshikawa, and K. Takahashi | Atomically Flat GaAs(001) Surface Obtained by High Temperature Treatment with Atomic Hydrogen Irradiation | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 36 | 1997 | L1367_L1369 | |
| Author | Title of Article | |||
| A. Yoshikawa, H. Nagano, Z. Qin, Y. Sugure, A. W. Jia, M. Kobayashi, M. Shimotomai, Y. Kato and K. Takahashi | Effect of Atomic-Hydrogen treatment of (001)GaAs Substrate at "High Temperatures" on RF Plasma-Assisted Molecular Beam Epitaxy of Cubic GaN | |||
| Journal | Volume | Year | Pages Concerned | |
| Mat. Res. Soc. Symp. Proc. | 482 | 1997 | 227_232 | |
| Author | Title of Article | |||
| A. Yoshikawa, Z. Qin, H. Nagano, Y. Sugure, A. W. Jia, M. Kobayashi, M. Shimotomai, Y. Kato and K. Takahashi | High-Resolution X-Ray Diffraction Analysis of "Device-Quality" Cubic GaN Grown on (001)GaAs SUBSTRATE PREPARED BY Atomic-Hydrogen treatment at "High Temperatures" | |||
| Journal | Volume | Year | Pages Concerned | |
| Mat. Res. Soc. Symp. Proc. | 482 | 1997 | 465_470 | |
| Author | Title of Article | |||
| R. Kimura, Y. Gotoh, T. Nagai, Y. Uchida, T. Matsuzawa, K. Takahashi and G. C. Schulz | A Study of Initial Growth Mechanism of c-GaN on GaAs(100) by Molecular Beam Epitaxy | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Crystal Growth | 189/190 | 1998 | 406_410 | |
| Author | Title of Article | |||
| M. Kobayashi, S. Nakamura, K. Wakao, A. Yoshikawa and K. Takahashi | Molecular beam epitaxy of CdS Self-Assembled Quantum Dots on ZnSe | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Vac. Sci. Technol. | B16 | 1998 | 1316_1320 | |
| Author | Title of Article | |||
| M. Kobayashi, C. Setiagung, K. Wakao, S. Nakamura, A. Yoshikawa and K. Takahashi | MBE growth and characterization of ZnSTe and ZnMgSTe alloys | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Crystal Growth | 184/185 | 1998 | 66_69 | |
| Author | Title of Article | |||
| A. Yoshikawa, Z. Qin, H. Nagano, Y. Sugure, A. W. Jia, M. Kobayashi, Y. Kato and K. Takahashi | MBE Growth of Device-Quality Cubic GaN on Atomically Flat (001)GaAs Prepared by Atomic-Hydrogen Treatment at High-Temperatures | |||
| Journal | Volume | Year | Pages Concerned | |
| Slicon Carbide III-nitrides and Related Materials-Part 2, Materials Science Forum | 264-268 | 1998 | 1221_1224 | |
| Author | Title of Article | |||
| Z. Qin, N. Nagano, Y. Sugure, A. W. Jia,, M. Kobayashi, Y. Kato, A. Yoshikawa, and K. Takahashi | High-Resolution X-ray Diffraction Anylysis of Cubic GaN Grown on (001) GaAs by RF-Radical Source Molecular Beam Epitaxy | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Crystal Growth | 189/190 | 1998 | 425_429 | |
| Author | Title of Article | |||
| H. Nagano, Z. Qin, A. W. Jia, M. Kobayashi, Y. Kato, A. Yoshikawa, and K. Takahashi | Atomically Flat (001)GaAs Surface Prepared by Two-Step Atomic-Hydrogen Treatment and Its Application to Hereroepitaxy of GaN | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Crystal Growth | 189/190 | 1998 | 265_269 | |
| Author | Title of Article | |||
| Y. Taniyasu, R. Ito, N. Shimoyama, M. Kurihara, A. W. Jia, M. Kobayashi, Y. Kato, A. Yoshikawa, and K. Takahashi | In-Situ Monitoring of Initial Growth Stages of GaN Films on GaAs(001) in Low-Pressure MOVPE by Spectroscopic Ellipsonmetry | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Crystal Growth (to be published) | 189/190 | 1998 | 305_309 | |
| Author | Title of Article | |||
| M. Murayama and T. Nakayama | Reflectance Difference Spectra Calculations of GaAs (001) As- and Ga-rich Reconstruction Surface Structures | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 37 | 1998 | 4110_4114 | |
| Author | Title of Article | |||
| M. Ishikawa and T. Nakayama | Stacking and Optical Properties of Layered In2<・SUB>Se3<・SUB> | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 37 | 1998 | L1125_L1127 | |
| Author | Title of Article | |||
| S. Nakamura, K. Kitamura, H. Umeya, A. W. Jia, M. Kobayashi, A. Yoshikawa, S. Shimotomai, Y. Kato and K. Takahashi | Bright electroluminescence from CdS quantum dot LED structures | |||
| Journal | Volume | Year | Pages Concerned | |
| Electronics Letters | 34 | 1998 | 2435_2436 | |
| Author | Title of Article | |||
| S. Nakamura, K. Kitamura, H. Umeya, A. Jia, M. Kobayashi, A. Yoshikawa, S. Shimotomai, Y. Kato and K. Takahashi | Bright electroluminescence from CdS quantum Dot LED structures | |||
| Journal | Volume | Year | Pages Concerned | |
| Electro. Lett. | 34 | 1998 | 2435_2435 | |
| Author | Title of Article | |||
| M. Shimotomai and A. Yoshikawa | Simultaneous phase separation and basal-plane atomic ordering in Inｘ<・SUB> Ga1-ｘ<・SUB>N | |||
| Journal | Volume | Year | Pages Concerned | |
| Appl. Phys. Lett. | 73 | 1998 | 3256_3258 | |
| Author | Title of Article | |||
| K. Wakao, S. Nakamura, A. Jia, M. Kobayashi, A. Yoshikawa, M. Shimotomai, Y. Kato and K. Takahashi | Citric Acid Etching of ZnSe Surface and Application to the Homoepitaxy by Molecular Beam Epitaxy | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys | 37 | 1998 | L749_L751 | |
| Author | Title of Article | |||
| Z. Qin, M. Kobayashi, A. Yoshikawa and K. Takahashi | X-Ray Diffraction Reciprocal Space and Pole Figure Characterization of Cubic GaN Epilayers Grown on (001) GaAs by Molecular Beam Epitaxy | |||
| Journal | Volume | Year | Pages Concerned | |
| Journal of Materials Science Materials in Electronics | 10 | 1999 | 199_202 | |
| Author | Title of Article | |||
| M. Kobayashi, S. Nakamura, K. Kitamura, H. Umeya, A. Jia, A. Yoshikawa, M. Shimotomai, Y. Kato, and K. Takahashi | Luminescence properities of CdS quantum dots on ZnSe | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Vac. Sci. Technol. | B17 | 1999 | 2005_2008 | |
| Author | Title of Article | |||
| M. Kobayashi, K. Wakao, S. Nakamura, Y. Sugure, A. W. Jia, A. Yoshikawa, M. Shimotomai, Y. Kato, and K. Takahashi | Homoepitaxy of ZnSe on the citric acid etched (001) ZnSe Surface | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Cryst. Growth | 201/202 | 1999 | 474_476 | |
| Author | Title of Article | |||
| H. Hayashi, A. Hayashida, A. W. Jia, M. Kobayashi, M. Shimotomai, Y. Kato, A. Yoshikawa, and, K. Takahashi | Origin of the tilt of crystalline axis influenced by N-beam incidence direction in rf-MBE of cubic GaN epilayer on (001) GaAs | |||
| Journal | Volume | Year | Pages Concerned | |
| Phys. Stat. Sol. | 216 | 1999 | 241_245 | |
| Author | Title of Article | |||
| Y. Taniyasu, Y. Watanabe, D. H. Lim, A. W. Jia, M. Shimotomai, Y. Kato, M. Kobayashi, A. Yoshikawa, and K. Takahashi | Structureal Defects of Cubic InGaN/GaN Heterostructure Grown on GaAs(001) Substrate by MOVPE | |||
| Journal | Volume | Year | Pages Concerned | |
| phys. stat. sol. (a) | 176 | 1999 | 397_401 | |
| Author | Title of Article | |||
| A. Jia, T. Furushima, M. Kobayashi, Y. Kato, M. Shimotomai, A. Yoshikawa and K. Takahashi | Design of new UV/blue/green light emitters made of hexagonal-phase ZnMgCdOSSe mixed-crystal system fabricated on GaAs- and InP-(111) substrates | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Crystal Growth | 214/215 | 2000 | 1085_1090 | |
| Author | Title of Article | |||
| K. Kitamura, H. Umeya, A. W. Jia, M. Kobayashi, A. Yoshikawa, M. Shimotomai, Y. Kato, and K. Takahashi | Self-assembled CdS quantum dot structures grown on ZnSe and ZnSSe | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Crystal Growth | 214/215 | 2000 | 680_683 | |
| Author | Title of Article | |||
| H. Umeya, K. Kitamura, A. W. Jia, M. Kobayashi, A. Yoshikawa, M. Shimotomai, Y. Kato, and K. Takahashi | Growth of hexagonal ZnCdS on GaAs (111)B and (001) substrates by MBE | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Crystal Growth | 214/215 | 2000 | 192_196 | |
| Author | Title of Article | |||
| M. Kobayashi, K. Kitamura, H. Umeya, A. W. Jia, A. Yoshikawa, M. Shimotomai, Y. Kato, and K. Takahashi | Growth of CdS self-organized quantum doots by molecular beam epitaxy and application to light emmiting diode structures | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Vac. Sci. Technol. | B18 | 2000 | 1684_1687 | |
| Author | Title of Article | |||
| M. Kobayashi, K. Kitamura, H. Umeya, A. Jia, A. Yoshikawa, Y. Kato, M. Shimotomai, and K. Takahashi | CdS based novel light emitting device structures grown by MBE | |||
| Journal | Volume | Year | Pages Concerned | |
| phys. stat. sol. (a) | 180 | 2000 | ||
| Author | Title of Article | |||
| T. Kazama, F. Yasunaga, Y. Taniyasu, A. Jia, Y. Kato, M. Kobayashi, A. Yoshikawa and K. Takahashi | Cross-Sectional Scanning Tunneling Microscopy Characterization of Cubic GaN Epilayers Grown on (001) GaAs | |||
| Journal | Volume | Year | Pages Concerned | |
| phys. stat. sol. (a) | 180 | 2000 | 345_350 | |
| Author | Title of Article | |||
| Y. Taniyasu, K. Suzuki, D. H. Lim, A. Jia, M. Shimotomai, Y. Kato, M. Kobayashi, A. Yoshikawa and K. Takahashi | Cubic InGaN/GaN Double-Heterostructure Light Emitting Diodes Grown on GaAs (001) Substrates by MOVPE | |||
| Journal | Volume | Year | Pages Concerned | |
| phys. stat. sol. (a) | 180 | 2000 | 241_246 | |
| Author | Title of Article | |||
| Z. J. Yang, Y. Z. Tong, G. Y. Zhang, X. L. Du, N. Fujii, A. Jia, A. Yoshikawa | Effect of pits in InGaN/GaN multi-quantum well on the strain and In composition segregation | |||
| Journal | Volume | Year | Pages Concerned | |
| phys. stat. sol. (a) | 180 | 2000 | 81_84 | |
| Author | Title of Article | |||
| B. L. Liu, D. H. Lim, M. Lachab, A. W. Jia, K. Takahashi, and A. Yoshikawa | A new Approach to grow GaN by Low-Pressure MOCVD Using a Three Step Technique | |||
| Journal | Volume | Year | Pages Concerned | |
| Proc. Int. Workshop on Nitride Semiconductors, IPAP Conf. Series 1 | 2000 | 133_136 | ||
| Author | Title of Article | |||
| D. H. Lim, K. Suzuki, S. Arima, Y. Taniyasu, K. Xu, B. L. Liu, G. H. Yu, K. Takahashi, and A. Yoshikawa | CAICISS Analysis for the Polarity Conversion of GaN Films Grown on Nireided Sappire Substrates | |||
| Journal | Volume | Year | Pages Concerned | |
| Proc. Int. Workshop on Nitride Semiconductors, IPAP Conf. Series 1 | 2000 | 150_153 | ||
| Author | Title of Article | |||
| X. L. Du, D. H. Lim, K. Xu, Y. Taniyasu, B. L. Liu, G. H. Yu, A. W. Jia, K. Takahashi, and A. Yoshikawa | Direct Observation of Defect Structures in Ga-Polar and N-Polar GaN Epilayers by Cross-Sectional Cathodoluminescence | |||
| Journal | Volume | Year | Pages Concerned | |
| Proc. Int. Workshop on Nitride Semiconductors, IPAP Conf. Series 1 | 2000 | 502_505 | ||
| Author | Title of Article | |||
| R. Kimura and K. Takahashi | High quality epitaxial growth of h-GaN on Al203(0001) and c-GaN on GaAs(100) by molecular beam epitaxy | |||
| Journal | Volume | Year | Pages Concerned | |
| phys. stat. sol. (a) | 180 | 2000 | 235_239 | |
| Author | Title of Article | |||
| R. Kimura, Y. Gotoh, T. Matsuzawa and K. Takahashi | High purity cubic GaN grown on an AlGaAs buffer layer by molecular beam epitaxy | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Cryst. Growth | 209 | 2000 | 382_386 | |
| Author | Title of Article | |||
| R. Kimura, K. Takahashi, A. Jia, M. Kobayashi and A. Yoshikawa | Molecular beam epitaxial growth of GaN on (0001) Al203 using an ultrathin amorphous buffer layer deposited at low temperature | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 39 | 2000 | 1039_1043 | |
| Author | Title of Article | |||
| R. Kimura, K. Takahashi and H. T. Grahn | A study on the growth of cubic-GaN film using an AlGaAs buffer layer grown on GaAs(100) by plasma-assisted molecular beam epitaxy | |||
| Journal | Volume | Year | Pages Concerned | |
| Mat. Res. Symp. | 639 | 2001 | G3.46.1_G3.46.5 | |
| Author | Title of Article | |||
| X. L. Du, D. H. Lim, K. Xu, B. L. Liu, A. W. Jia, K. Takahashi and A. Yoshikawa | Cross-sectional Cathodoluminescence Study in Ga-polar and N-polar GaN Epilayers | |||
| Journal | Volume | Year | Pages Concerned | |
| Mat. Res. Soc. Symp. | 639 | 2001 | G6.16.1_G6.16.6 | |
| Author | Title of Article | |||
| K. Xu, D. H. Lim, B. L. Liu, A. W. Jia, A. Yoshikawa | Atomic force microscopy study of GaN grown on Al203 (0001) by LP-MOVPE | |||
| Journal | Volume | Year | Pages Concerned | |
| Mat. Res. Soc. Symp. | 639 | 2001 | G3.28.1_G3.28.5 | |
| Author | Title of Article | |||
| H. Hayashi, A. Hayashida, A. Jia, K. Takahashi, A. Yoshikawa | Experimental investigation of inclusion of hexagonal GaN phase domain by varying nitrogen-beam direction to a <111> axis in MBE growth of cubic GaN | |||
| Journal | Volume | Year | Pages Concerned | |
| Journal of crystal growth, (in press) | 2001 | |||
| Author | Title of Article | |||
| R. Kimura and K. Takahashi | Investigation of initial growth stage of cubic-GaN using AlGaAs buffer layer on GaAs (100) by molecular beam epitaxy | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Crystal Growth (in press) | 2001 | |||
| Author | Title of Article | |||
| K. Xu, N. Yano, A. W. Jia, K. Takahashi, A. Yoshikawa | Polarity Control of GaN Grown on Sapphire Substrate by RF-MBE | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Crystal Growth (to be published) | 2001 | |||
| Author | Title of Article | |||
| K. Xu, N. Yano, A. W. Jia, K. Takahashi, A. Yoshikawa | In-situ Real-time Analysis on Strain Relaxation Process in GaN Growth on Sapphire by RF-MBE | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Crystal Growth (to be published) | 2001 | |||
| Author | Title of Article | |||
| K. Xu, N. Yano, A. W. Jia, A. Yoshikawa, K. Takahashi | Kinetic process in polarity selection of GaN grown by RF-MBE | |||
| Journal | Volume | Year | Pages Concerned | |
| to be published on Phys. Solid Status | 2001 | |||
| Author | Title of Article | |||
| D. H. Lim, K. Xu, S. Arima, A. Yoshikawa and K. Takahashi | Polarity conversion of GaN films by the insertion of two monolayers of aluminum | |||
| Journal | Volume | Year | Pages Concerned | |
| Applied Physics Letters (in press) | 2001 | |||
| Author | Title of Article | |||
| R. Kimura and K. Takahashi | A study on initial nucliation using an ultra thin amorphous buffer layer for the growth of GaN on Al2O3(0001) by molecular beam epitaxy | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 39 | 2000 | 402_406 | |
| Author | Title of Article | |||
| D. M. Bagnall, Y. F. Chen, Z. Q. Zhu, T. Yao, S. Koyama, M. Y. Shen and T. Goto | Optically pumped lasinh of ZnO at room temperature | |||
| Journal | Volume | Year | Pages Concerned | |
| Appl. Phys. Lett. | 70 | 1997 | 2230_2232 | |
| Author | Title of Article | |||
| M. W. Cho, K. W. Koh, K. Morikawa, K. Arai, H. D. Jung, Z. Q. Zhu, T. Yao and Y. Okada | Surface treatment of ZnSe substrate and homoepitaxy of ZnSe | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Electron. Mater. | 26 | 1997 | 423_428 | |
| Author | Title of Article | |||
| Z. Q. Zhu, E. Kurtz, K. Arai, Y. F. Chen, D. M. Bagnall, P. Tomashini, F. Lu, T. Sekiguchi, T. Yao, T. Yasuda and Y. Segawa | Self-organized growth of II-VI wide bandgap quantum dot structures | |||
| Journal | Volume | Year | Pages Concerned | |
| Phys. Stat. Sol. (b) | 202 | 1997 | 827_833 | |
| Author | Title of Article | |||
| S. Q. Wang, F. Lu, H. D. Jung, C. D. Song, Z. Q. Zhu, H. Okushi, B. C. Cavenett and T. Yao | Electronic states in ZnSe/ZnTe type-II superlattice studied by capacitance transient spectroscopy | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Appl. Phys. | 82 | 1997 | 3402_3407 | |
| Author | Title of Article | |||
| Y. F. Chen, D. M. Bagnall, Z. Q. Zhu, T. Sekiguchi, K. T. Park, K. Hiraga, T. Yao, S. Koyama, M. Y. Shen and T Goto | Growth of ZnO single crystal thin films on c - plane(0001)sapphire by plasma enhanced molecular beam epitaxy | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Cryst. Growth | 181 | 1997 | 165_169 | |
| Author | Title of Article | |||
| Y. F. Chen, D. M. Bagnall, Z. Q. Zhu, T. Sekiguchi, K. T. Park, K. Hiraga and T. Yao | Observation of zinc oxide quantum pyramids grown by plasma enhanced molecular beam epitaxy | |||
| Journal | Volume | Year | Pages Concerned | |
| Nonlinear Optics | 18 | 1997 | 107_110 | |
| Author | Title of Article | |||
| 5. D. M. Bagnall, Y. F. Chen, Z. Q. Zhu, T. Yao, M. Y. Shen and T. Goto | High temperature stimulated emission of ZnO grown by plasma assisited molecular beam epitaxy | |||
| Journal | Volume | Year | Pages Concerned | |
| Nonlinear Optics | 18 | 1997 | 243_246 | |
| Author | Title of Article | |||
| Y. F. Chen, Z. Q. Zhu, D. M. Bagnall, T. Sekiguchi and T. Yao | ZnO quantum pyramids grown on c-plane sapphire by plasma-assisted molecular beam epitaxy | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Cryst. Growth | 184/185 | 1998 | 269_273 | |
| Author | Title of Article | |||
| D. M. Bagnall, Y. F. Chen, M. Y. Shen, Z. Q. Zhu, T. Goto and T. Yao | Room temperature excitonic stmuated emission from zinc oxide epilayers grown by plasma-assisted MBE | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Cryst. Growth | 184/185 | 1998 | 605_609 | |
| Author | Title of Article | |||
| Y. F. Chen, D. M. Bagnall, H. J. Koh, K. T. Park, K. Hiraga, Z. Q. Zhu and T. Yao | Plasma assisted molecular beam epitaxy of ZnO on c-plane sapphire: Growth and characterzation | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Appl. Phys. | 84 | 1998 | 3912_3918 | |
| Author | Title of Article | |||
| H. J. Ko, Y. F. Chen, Z. Zhu, J. M. Ko, T. Fukuda and T. Yao | Electron beam exposure and epitaxy of ZnO films on (111)CaF2 | |||
| Journal | Volume | Year | Pages Concerned | |
| Proc. of the 2th Int. Symp. on Blue Laser and Light Emitting Diodes | 1998 | 500_503 | ||
| Author | Title of Article | |||
| D. M. Bagnall, Y. F. Chen, H. J. Ko, Z. Q. Zhu, M. Y. Shen, T. Goto and T. Yao | ZnO excitonic Lasers- the future of short wavelength emission? | |||
| Journal | Volume | Year | Pages Concerned | |
| Proc. of the 2th Int. Symp. on Blue Laser and Light Emitting Diodes | 1998 | 536_539 | ||
| Author | Title of Article | |||
| D. M. Bagnall, Y. F. Chen, Z. Zhu and T. Yao | High temperature excitonic stimulated emission from ZnO epitaxial layers | |||
| Journal | Volume | Year | Pages Concerned | |
| Appl. Phys. Lett. | 73 | 1998 | 1038_1040 | |
| Author | Title of Article | |||
| T. Yao, Y. F. Chen and D. M. Bagnall | ZnO as a novel photonic material for the UV region | |||
| Journal | Volume | Year | Pages Concerned | |
| Proc. of the 2nd International Warkshop on Optoelectronics | 1998 | 80_86 | ||
| Author | Title of Article | |||
| A. Yamamoto, T. Kido, T. Goto, Y. F. Chen, T. Yao and A. Kasuya | Pump-probe measurement of ZnO epitaxial thin films | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Korean Phys. Soc. | 34 | 1999 | 58_60 | |
| Author | Title of Article | |||
| M. W. Cho, J. H. Chang, D. M. Bagnall, K. W. Koh, S. Saeki, K. T. Park, Z. Zhu, K. Hiraga and T. Yao | Growth and characterization of beryllium-based II-VI compounds | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Appl. Phys. | 85 | 1999 | 512_517 | |
| Author | Title of Article | |||
| M. W. Cho, S. Saeki, S. K. Hong, J. H. Chang, N. Nakajima, T. Yao, T. H. Yoon and J. H. Lee | Non-alloyed Au/p-ZnSe/p-BeTe ohmic contact layers for ZnSe-based blue-green laser diodes | |||
| Journal | Volume | Year | Pages Concerned | |
| Electr. Lett. | 35 | 1999 | 1740_1742 | |
| Author | Title of Article | |||
| A. Yamamoto, T. Kido, T. Goto, Y. F. Chen, T. Yao and A. Kasuya | Dynamics of photoexcited carriers in ZnO epitaxial thin films | |||
| Journal | Volume | Year | Pages Concerned | |
| Appl. Phys. Lett. | 75 | 1999 | 469_471 | |
| Author | Title of Article | |||
| H. J. Ko, Y. F. Chen, J. M. Ko, T. Hanada, Z. Zhu, T. Fukuda and T. Yao | Two-step MBE growth of ZnO layers on electron beam exposed(111)CaF2 | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Cryst. Growth | 207 | 1999 | 87_94 | |
| Author | Title of Article | |||
| D. M. Bagnall, Y. F. Chen, Z. Q. Zhu, T. Yao, M. Y. Shen and T. Goto | Plasma assisted molecular beam epitaxy of ZnO for optoelectronic applications | |||
| Journal | Volume | Year | Pages Concerned | |
| Recent Res. Devel. Crystal Growth Res. | 1999 | 1257_1273 | ||
| Author | Title of Article | |||
| Y. F. Chen, S. K. Hong, H. J. Ko, M. Nakajima, T. Yao and T. Segawa | Plasma-assisted molecular-beam epitaxy of ZnO epilayers on atomically flat MgA1204(111) substrates | |||
| Journal | Volume | Year | Pages Concerned | |
| Appl. Phys. Lett. | 76 | 2000 | 245_247 | |
| Author | Title of Article | |||
| Y. F. Chen, H. J. Ko, S. K. Hong and T. Yao | Layer-by-layer growth of ZnO epilayer on Al2O3(0001)by using a MgO buffer layer | |||
| Journal | Volume | Year | Pages Concerned | |
| Appl. Phys. Lett. | 76 | 2000 | 559_561 | |
| Author | Title of Article | |||
| H. J. Ko, Y. F. Chen, Z, Zhu, T. Hanada and T. Yao | Effects of a low-temperature buffer layer on structural properties of ZnO epilayers grown on(111)CaF2 by two-step MBE | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Cryst. Growth | 208 | 2000 | 389_394 | |
| Author | Title of Article | |||
| S. K. Hong, H. J. Ko, Y. F. Chen and T. Yao | Defect characterization in epitaxial ZnO/epi-GaN/Al2O3 hetero-structures: transmission electron microscopy and triple-axis X-ray diffractometry | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Cryst. Growth | 209 | 2000 | 537_541 | |
| Author | Title of Article | |||
| S. K. Hong, H. J. Ko, Y. F. Chen and T. Yao | Defect characterization in epitaxial ZnO/epi-GaN/A1203 heterostructures: transmission electron microscopy and triple-axis X-ray diffractometry | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Cryst. Growth | 209 | 2000 | 537_541 | |
| Author | Title of Article | |||
| H. J. Ko, Y. F. Chen, S. K. Hong and T. Yao | MBE growth of high-quality ZnO Films on epi-GaN | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Cryst. Growth | 209 | 2000 | 816_821 | |
| Author | Title of Article | |||
| H. J. Ko, Y. F. Chen, Z. Q. Zhu, T. Yao, I. Kobayashi and H. Uchiki | Photoluminescence properties of ZnO epilayers grown on CaF2(111)by plasma assisted molecular beam epitaxy | |||
| Journal | Volume | Year | Pages Concerned | |
| Appl. Phys. Lett. | 76 | 2000 | 1905_1907 | |
| Author | Title of Article | |||
| S. K. Hong, H. J. Ko, Y. F. Chen, T. Hanada and T. Yao | Evolution of initial layers of plasma-assisted MBE grown ZnO in (0001)GaN/sapphire | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Cryst. Growth | 214/215 | 2000 | 81_86 | |
| Author | Title of Article | |||
| Y. F. Chen, H. J. Ko, S. K. Hong, T. Yao and Y. Segawa | Two dimensional growth of ZnO films on sapphire (0001) with buffer layers | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Cryst. Growth | 214/215 | 2000 | 87_91 | |
| Author | Title of Article | |||
| A. Yamamoto, T. Kido, T. Goto, Y. F. Chen, T. Yao and A. Kasuya | Time-resolved photoluminescence in ZnO epitaxial thin films studied by up-conversion method | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Cryst. Growth | 214/215 | 2000 | 308_311 | |
| Author | Title of Article | |||
| S. K. Hong, T. Yao, B. J. Kim, S. Y. Yoon and T. I. Kim | Origin of hexagonal-shaped etch pits formed in (0001) GaN films | |||
| Journal | Volume | Year | Pages Concerned | |
| Appl. Phys. Lett. | 77 | 2000 | 82_84 | |
| Author | Title of Article | |||
| Y. F. Chen, D. M. Bagnall and T. Yao | ZnO as a novel photonic material for the UV region | |||
| Journal | Volume | Year | Pages Concerned | |
| Mater. Sci. Eng. | B75 | 2000 | 190_198 | |
| Author | Title of Article | |||
| H. J. Ko, Y. F. Chen, T. Yao, M. Miyajima, A. Yamamoto and T. Goto | Biexciton emission from high-quality ZnO films grown on epitaxial GaN by plasma-assisted molecular-beam epitaxy | |||
| Journal | Volume | Year | Pages Concerned | |
| Appl. Phys. Lett. 77 (4)(2000) 537 - 539 | 77 | 2000 | 537_539 | |
| Author | Title of Article | |||
| S. K. Hong, H. J. Ko, Y. F. Chen, T. Hanada and T. Yao | Control and characterization of ZnO/GaN heterointerfaces in plasma-assisted MBE-grown ZnO films on GaN/A12O3 | |||
| Journal | Volume | Year | Pages Concerned | |
| Appl. Surf. Sci. | 159/160 | 2000 | 441_448 | |
| Author | Title of Article | |||
| Y. F. Chen, S. K. Hong, H. J. Ko, M. Nakajima, T. Yao and T. Segawa | Plasma-assisted molecular-beam epitaxy of ZnO epilayers on atomically flat MgA12O4(111) substrates | |||
| Journal | Volume | Year | Pages Concerned | |
| Appl. Phys. Lett | 76 | 2000 | 245_247 | |
| Author | Title of Article | |||
| S. K. Hong, H. J. Ko, Y. F. Chen, T. Hanada and T. Yao | ZnO/GaN heterointerfaces and ZnO films grown by plasma-assisted molecular beam epitaxy on (0001) GaN/A12O3 | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Vac. Sci. Technol. | B18 | 2000 | 2313_2321 | |
| Author | Title of Article | |||
| S. K. Hong, T. Hanada, H. J. Ko, Y. F. Chen, T. Yao, D. Imai, K. Araki and M. Shinohara | Control of polarity of ZnO films grown by plasma-assisted molecular-beam epitaxy: Zn-and O-polar ZnO films on Ga-polar GaN templated | |||
| Journal | Volume | Year | Pages Concerned | |
| Appl. Phys. Lett. | 77 | 2000 | 3571_3573 | |
| Author | Title of Article | |||
| Y. F. Chen, H. J. Ko, S. K. Hong, T. Sekiguchi, T. Yao and Y. Segawa | Plasma-assisted molecular beam epitaxy for ZnO based II-VI semiconductor oxides and their heterostructures | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Vac. Sci. Technol. | B18 | 2000 | 1514_1517 | |
| Author | Title of Article | |||
| H. J. Ko, Y. F. Chen, S. K. Hong, H. Wenisch, T. Yao and D. C. Look | Ga-doped ZnO films grown on GaN templates by plasma-assisted molecular-beam epitaxy | |||
| Journal | Volume | Year | Pages Concerned | |
| Appl. Phys. Lett. | 77 | 2000 | 3761_3763 | |
| Author | Title of Article | |||
| A. Takeuchi, Y. Kumagai, H. Tsuchiya, M. Kawabe, M. Kurihara and F. Hasegawa | Initial Stage of Cubic GaN Film Growth on (001) GaAs by MOMBE using MMHyand TEG | |||
| Journal | Volume | Year | Pages Concerned | |
| Institute of Physics Conference Series | 142 | 1996 | 843_846 | |
| Author | Title of Article | |||
| M. Akamatsu, H. Tsuchiya, M. Ishida and F. Hasegawa | Atomic Layer Epitaxy of GaN using GaC13 and NH3 its Analysis by Surface Photo-Absorption Method | |||
| Journal | Volume | Year | Pages Concerned | |
| Proceeding of International Symposium on Blue Laser and Light Emitting Diodes | 1996 | 98_101 | ||
| Author | Title of Article | |||
| H. Tsuchiya, M. Akamatsu, M. Ishida and F. Hasegawa | Layer by Layer Growth of GaN on GaAs Substrate using GaCl3 and NH3 | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 35 | 1996 | L748_L750 | |
| Author | Title of Article | |||
| H. Tsuchiya, A. Takeuchi, A. Matsuo and F. Hasegawa | Dependence of the HVPE GaN Epilayer on GaN Buffer layer for GaN Direct Growth on (001) GaAs Substrate | |||
| Journal | Volume | Year | Pages Concerned | |
| Solid State Electronics | 41 | 1997 | 333_338 | |
| Author | Title of Article | |||
| H. Tsuchiya, K. Sunaba, S. Yonemura, T. Suemasu and F. Hasegawa | Cubic Dominant GaN Growth on (001) GaAs Substrates by Hydride Vapor Phase Epitaxy | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 36 | 1997 | L1_L3 | |
| Author | Title of Article | |||
| A. Takeuchi, H. Tsuchiya, M. Kurihara and F. Hasegawa | Azimuth Dependence of The Crystal Quality of GaN Grown on (100) GaAs by MOMBE and Its Improvement by Annealing | |||
| Journal | Volume | Year | Pages Concerned | |
| Institute of Physics Conference Series Proceeding of 23rd Int. Symp. on Compound Semiconductors | 155 | 1997 | 183_186 | |
| Author | Title of Article | |||
| H. Tsuchiya, K. Sunaba, M. Minami, T. Suemasu and F. Hasegawa | Influence of As Autodoping from GaAs Substrates on Thick Cubic GaN Growth by Halide Vapor Phase Epitaxy | |||
| Journal | Volume | Year | Pages Concerned | |
| Japanese Journal of Applied Physics | 37 | 1998 | L568_L570 | |
| Author | Title of Article | |||
| S. Yonemura, T. Yaguchi, H. Tsuchiya, N. Shimoyama, T. Suemasu and F. Hasegawa | Comparison between Monomethyl-hydrazine and ECR Plasma Activated Nitrogen as a Nitrogen Source for CBE Growth of GaN | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Crystal Growth | 188 | 1998 | 81_85 | |
| Author | Title of Article | |||
| S. Yonemura, T. Yaguchi, H. Tsuchiya, N. Shimoyama, T. Suemasu and F. Hasegawa | Comparison between Monomethyl-hydrazine and ECR Plasma Activated Nitrogen as a Nitrogen Source for CBE Growth of GaN | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Crystal Growth | 188 | 1998 | 81_85 | |
| Author | Title of Article | |||
| 7. F. Hasegawa, M. Minami, K. Sunaba and T. Suemasu | Thick GaN growth on GaAs (111) substrates at 1000oC with HVPE | |||
| Journal | Volume | Year | Pages Concerned | |
| Phys. Stat. Sol. (a) | 178 | 1999 | 421_424 | |
| Author | Title of Article | |||
| F. Hasegawa, M. Minami, K. Sunaba and T. Suemasu | Thick GaN growth on GaAs (111) substrates at 1000℃ with HVPE | |||
| Journal | Volume | Year | Pages Concerned | |
| Phys. Stat. Sol. (a) | 178 | 1999 | 421_424 | |
| Author | Title of Article | |||
| T. Suemasu, M. Sakai and F. Hasegawa | Optimum thermal-cleaning condition of GaAs surface with a superior arsenic source: Trisdimethylamino-arsine | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Cryst. Growth | 209 | 2000 | 267_271 | |
| Author | Title of Article | |||
| M. Sasaki, S. Yonemura, T. Nakayama, N. Shimoyama, T. Suemasu and F. Hasegawa | CBE Growth of GaN on GaAs(001) and (111)B Substrates UsingMonomethylhydrazine | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Cryst. Growth | 209 | 2000 | 373_377 | |
| Author | Title of Article | |||
| F. Hasegawa, M. Minami, K. Sunaba and T. Suemasu | One possibility of obtaining bulk GaN: halide VPE growth at 1000oC on GaAs (111) substrates | |||
| Journal | Volume | Year | Pages Concerned | |
| IEICE Trans. Electron. | E83-C | 2000 | 633_638 | |
| Author | Title of Article | |||
| M. Sasaki, T. Nakayama, N. Shimoyama, T. Suemasu and F. Hasegawa | Superiority of an AIN Intermediate Layer for Heteroepitaxy of Hexagonal GaN | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 39 | 2000 | 4869_4874 | |
| Author | Title of Article | |||
| T. Nakayama, M. Namerikawa, O. Takahashi, T. Suemasu and F. Hasegawa | HVPE/MOMBE Hybrid Growth of High Quality Hexagonal GaN on SiO2 Substrates with an AIN Buffer Layer | |||
| Journal | Volume | Year | Pages Concerned | |
| Proceedings of Int. Workshop on Nitride Semiconductors, 2000 Nagoya, Japan. IPAP Conference Series 1 | 2000 | 7_10 | ||
| Author | Title of Article | |||
| O. Takahashi, M. Namerikawa, H. Tanaka, R. Souda, T. Suemasu and F. Hasegawa | Polarity of Hexagonal GaN Grown on GaAs (111)A and (111)B Substrates by HVPE and MOVPE | |||
| Journal | Volume | Year | Pages Concerned | |
| Proc. of MRS 2000 Fall Meetings (in press) | 2001 | |||
| Author | Title of Article | |||
| Y. Luo, R. Pu, C. Sun, J. Peng, T. Hirata, T. Eguchi, Y. Nakano and K. Tada | A Novel Monolithically Integrated Device Composed of MQW GaAlAs/GaAs Gain-Coupled DFB Laser and Electroabsorption Modulator | |||
| Journal | Volume | Year | Pages Concerned | |
| Chinese J. Semiconductors | 17 | 1996 | 347_352 | |
| Author | Title of Article | |||
| M. Kato, K. Tada and Y. Nakano | Wide-Wavelength Polarization-Independent Optical Modulator Based on Tensile-Strained Quantum Well with Mass-Dependent Width | |||
| Journal | Volume | Year | Pages Concerned | |
| IIEEE Photon. Tech. Lett. | 8 | 1996 | 785_787 | |
| Author | Title of Article | |||
| H. Feng, J. Pang, K. Tada and Y. Nakano | Large Field-Induced Refractive Index Change without Red Shift of Absorption Edge in Five-Step Asymmetric Coupled Quantum Wells with Modified Potential | |||
| Journal | Volume | Year | Pages Concerned | |
| IEEE Photon. Tech. Lett. | 9 | 1997 | 639_641 | |
| Author | Title of Article | |||
| M. Sugiyama, K. Kusunoki, Y. Shimogaki, S. Sudo, Y. Nakano, H. Nagamoto, K. Sugawara, K. Tada, and H. Komiyama | Kinetic studies on thermal decomposition of MOVPE sources using Fourier transform infrared spectroscopy | |||
| Journal | Volume | Year | Pages Concerned | |
| Applied Surface Science | 117/118 | 1997 | 746_752 | |
| Author | Title of Article | |||
| T. K. Sudoh, M. Kumano, Y. Nakano, and K. Tada | Wavelength trimming by photo-absoprtion induced disordering for multiple-wavelength distributed-feedback laser arrays | |||
| Journal | Volume | Year | Pages Concerned | |
| IEEE Photonics Technology Letters | 9 | 1997 | 887_891 | |
| Author | Title of Article | |||
| N. Chen, Y. Nakano, K. Okamoto, and K. Tada | Geert Morthier, and Roel Baets, "Analysis, fabrication, and characterization of tunable DFB lasers with chirped gratings | |||
| Journal | Volume | Year | Pages Concerned | |
| IEEE Journal of Selected Topics in Quantum Electronics | 3 | 1997 | 541_546 | |
| Author | Title of Article | |||
| M. Bouda, Y. Nakano and K. Tada | Wide-Angle Coupling to Multi-Mode Interference Devices -A Novel Concept for Compacting Photonic Integrated Circuits- | |||
| Journal | Volume | Year | Pages Concerned | |
| Trans. Inst. Electron. Inform. Commun. Engrs. | E80-C | 1997 | 640_645 | |
| Author | Title of Article | |||
| H. Feng, M. Sugiyama, J. Pang, K. Tada and Y. Nakano | Strong Exciton Absorption Peak Enhancement without Redshift of Absorption Edge in Al0.3Ga0.7As/GaAs Five-Step Asymmetric Coupled Quantum Well with Modified Potential | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 36 | 1997 | L855_L856 | |
| Author | Title of Article | |||
| H. Feng, E. H. Li and K. Tada | Analysis of X-Intersecting Waveguide Switches with a Large Branching Angles Ranging from 2° to 12° | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 36 | 1997 | 5136_5142 | |
| Author | Title of Article | |||
| K. Nishioka, M. Sugiyama, M. Nezuka, Y. Shimogaki, Y. Nakano, K. Tada, and H. Komiyama | Optimization of electron cyclotron resonance reactive ion beam etching reactors for dry etching of GaAs with C12 | |||
| Journal | Volume | Year | Pages Concerned | |
| Journal of Electrochemical Society | 144 | 1997 | 3191_3197 | |
| Author | Title of Article | |||
| Hao Feng, Kunio Tada and Yoshiaki Nakano | Polarization-independent large field-induced retractive index change in a strained five-step GaAs asymmetric coupled quantum well | |||
| Journal | Volume | Year | Pages Concerned | |
| Appl. Phys. Lett. | 71 | 1997 | 2674_2675 | |
| Author | Title of Article | |||
| H. Feng, J. P. Pang, M. Sugiyama, K. Tada and Y. Nakano | Field-Induced Optical Effect in a Five-Step Asymmetric Coupled Quantum Well with Modified Potential | |||
| Journal | Volume | Year | Pages Concerned | |
| IEEE J. Quantum Electron. | 34 | 1998 | 1197_1208 | |
| Author | Title of Article | |||
| Taro Arakawa, Kunio Tada, Naoki Kurosawa, Joo-Hyong Noh | Anomalous Sharp Dip of Large Field-Induced Refractive Index Change in GaAs/AlGaAs Five- Layer Asymmetric Coupled Quantum Well | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 39 | 2000 | 6329_6333 | |
| Author | Title of Article | |||
| Kunio Tada, Taro Arakawa, Kensuke Kazuma, Naoki Kurosawa, and Joo-Hyong Noh | Influence of One Monolayer Thickness Variation in GaAs/AlGaAs Five-Layer Asymmetric Coupled Quantum Well upon Electrorefractive Index Change | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 40 | 2001 | 656_661 | |
| Author | Title of Article | |||
| T. Honda, T. Sakaguchi, F. Koyama, K. Iga, K. Inoue, H. Munekata and H. Kukimoto | Design and Fabrication of ZnSe-based Blue/Green Surface Emitting Lasers | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Cryst. Growth | 159 | 1996 | 595_599 | |
| Author | Title of Article | |||
| T. Honda, F. Koyama, and K. Iga | Design consideration of GaN-Based surface emitting lasers | |||
| Journal | Volume | Year | Pages Concerned | |
| Mat. Res. Soc. Symp. Proc. | 449 | 1997 | 1151_1159 | |
| Author | Title of Article | |||
| T. Shirasawa, T. Honda, F. Koyama, and K. Iga | ZnO buffer layer formed on Si and Sapphire substrate for GaN MOVPE | |||
| Journal | Volume | Year | Pages Concerned | |
| Mat. Res. Soc. Symp. Proc. | 449 | 1997 | 373_377 | |
| Author | Title of Article | |||
| K. Saotome, A. Matsutani, T. Shirasawa, M. Mori, T. Honda, T. Sakaguchi, F. Koyama, and K. Iga | Reactive ion beam etching of GaN grown by MOVPE | |||
| Journal | Volume | Year | Pages Concerned | |
| Mat. Res. Soc. Symp. Proc. | 449 | 1997 | 1029_1033 | |
| Author | Title of Article | |||
| T. Shirasawa, N. Mochida, A. Inoue, T. Honda, T. Sakaguchi, F. Koyama and K. Iga | Interface Control of GaN/AlGaN Quantum Well Structures in MOVPE Growth | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Crystal Growth | 180/190 | 1998 | 124_127 | |
| Author | Title of Article | |||
| T. Honda, T. Miyamoto, T. Sakaguchi, H. Kawanishi, F. Koyama, and K. Iga | Effect of piezo electric field on emission characteristics GaN/AlGaN quantum wells | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Crystal Growth | 180/190 | 1998 | 644_648 | |
| Author | Title of Article | |||
| N. Mochida, T. Honda, T. Shirasawa, A. Inoue, T. Sakaguchi, F. Koyama and K. Iga | Crystal orientation dependence of p-type contact resistance of GaN | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Crystal Growth | 180/190 | 1998 | 716_719 | |
| Author | Title of Article | |||
| Y. Moriguchi, T. Miyamoto, T. Sakaguchi, M. Iwata, Y. Uchida, F. Koyama and K. Iga | GaN polycrystal Growth on Silica Substrate by Metalorganic Vapor Phase Epitaxy (MOVPE) | |||
| Journal | Volume | Year | Pages Concerned | |
| 3rd International Symposium on Blue Laser and Light Emitting Diodes, Berlin | WeP19 | 2000 | ||
| Author | Title of Article | |||
| T. Honda, H. Kawanishi, T. Sakaguchi, F. Koyama and K. Iga | Characteristic Temperature Estimation for GaN-Based Lasers | |||
| Journal | Volume | Year | Pages Concerned | |
| MRS Internet J. Nitride Semicond. Res. | 4S1 | 1999 | G6.2 | |
| Author | Title of Article | |||
| T. Miyamoto, T. Kageyama, S. Makino, D. Schlenker, F. Koyama and K. Iga | CBE and MOCVD growth of GaInNAs | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Crystal Growth | 209 | 2000 | 339_344 | |
| Author | Title of Article | |||
| T. Kageyama, T. Miyamoto, S. Makino, F. Koyama and K. Iga | Optical quality of GaNAs and GaInNAs and its dependence on RF cell condition in chemical beam epitaxy | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Crystal Growth | 209 | 2000 | 350_354 | |
| Author | Title of Article | |||
| K. Iga | Surface emitting laser-its birth and generation of new optoelectronics field | |||
| Journal | Volume | Year | Pages Concerned | |
| IEEE J. Select. Top. Quantum Electron. | 6 | 2000 | 1201_1205 | |
| Author | Title of Article | |||
| Y. Kawakami, T. Onishi, S. Yamaguchi, H. Kurusu, Sz. Fujita and Sg. Fujita | Time-resolved Luminescence Spectroscopy of Recombination Dynamics in a ZnSSe Doping Superlattice | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Crystal Growth | 159 | 1996 | 429_433 | |
| Author | Title of Article | |||
| Y. Kawakami, M. Funato, Sz. Fujita, Sg. Fujita, Y. Yamada, T. Mishina and Y. Masumoto | Effects of High Excitation on Localized Excitons in Cubic ZnCdS Lattice Matched to GaAs | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Crystal Growth | 159 | 1996 | 830_834 | |
| Author | Title of Article | |||
| Y. Yamada, T. Mishina and Y. Masumoto, Y. Kawakami, J. Suda, Sz. Fujita and Sg. Fujita | Dynamics of Dense Excitonic Systems in ZnSe-based Single Quantum Wells | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Crystal Growth | 159 | 1996 | 814_817 | |
| Author | Title of Article | |||
| S. Yamaguchi, Y. Kawakami, Sz. Fujita and Sg. Fujita | Recombination Dynamics of Localized Excitons in a CdSe/ZnSe/ZnS_{x}Se_{1-x} Single-Quantum-well Structure | |||
| Journal | Volume | Year | Pages Concerned | |
| Physical Review B | B15 | 1996 | 2629_2634 | |
| Author | Title of Article | |||
| Hyun-Chul Ko, Doo-Cheol Park, YcKawakami, Sz. Fujita, and Sg. Fujita | Fabrication and optical properties of ZnCdSe/ZnSe Single Quantum Well on GaAs(110) Surface Cleaved in UHV by Molecular Beam Epitaxy | |||
| Journal | Volume | Year | Pages Concerned | |
| Semicond. Sci. & Tech. | 11 | 1996 | 1873_1877 | |
| Author | Title of Article | |||
| J. Tang, Y. Kawakami, Sz. Fujita and Sg. Fujita | Photocurrent Spectrum of p-i-n Znl-xCdxSe/ZnSe Multiple Quantum Well Heterostructures | |||
| Journal | Volume | Year | Pages Concerned | |
| Electro-Optic and Second Harmonic Generation Materials, Devices, and Applications | 2897 | 1996 | 95_103 | |
| Author | Title of Article | |||
| J. Tang, Y. Kawakami, Sz. Fujita and Sg. Fujita | Znl-xCdxSe/ZnSe Multiple Quantum Well Photomodulators | |||
| Journal | Volume | Year | Pages Concerned | |
| Electro-Optic and Second Harmonic Generation Materials, Devices, and Applications | 2897 | 1996 | 389_395 | |
| Author | Title of Article | |||
| Hyun-Chul Ko, S. Yamaguchi, H. Kurusu, Y. Kawakami, Sz. Fujita, and Sg. Fujita | Reflection High energy Electron Diffraction Intensity Oscillations during the Growth of ZnSe on Cleaved GaAs(110) Surface by Molecular Beam Epitaxy | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 35 | 1996 | L366_L368 | |
| Author | Title of Article | |||
| Y. Kawakami, Z. Peng, Y. Narukawa, Sz. Fujita, Sg. Fujita and Shuji Nakamura | Recombination dynamics of excitons and biexcitons in a hexagonal GaN epitaxial layer | |||
| Journal | Volume | Year | Pages Concerned | |
| Applied Physics Letters | 69 | 1996 | 1414_1416 | |
| Author | Title of Article | |||
| H. -C. Ko, D. -C. Park, Y. Kawakami, Sz. Fujita and Sg. Fujita | Self-Aligning Phenomena of ZnCdSe Islands Grown by Molecular Beam Epitaxy on GaAs (110) Surface Cleaved in Ultra High Vacuum | |||
| Journal | Volume | Year | Pages Concerned | |
| Applied Surface Science | 117/118 | 1997 | 484_488 | |
| Author | Title of Article | |||
| H. -C. Ko, D. -C. Park, Y. Kawakami, Sz. Fujita and Sg. Fujita | Optimization of ZnSe Growth on the Cleavage-Induced GaAs (110) Surface by Molecular-Beam Epitaxy | |||
| Journal | Volume | Year | Pages Concerned | |
| Journal of Crystal Growth - The Special Issue for the 2nd ICNS'97 - (to be published) | 178 | 1997 | 246_251 | |
| Author | Title of Article | |||
| H. -C. Ko, D. -C. Park, Y. Kawakami, Sz. Fujita and Sg. Fujita | Microscopic Photoluminescence Spectroscopy of Self-Organized CdSe-ZnSe Quantum Dots Grown on the GaAs (110) Cleaved Surface | |||
| Journal | Volume | Year | Pages Concerned | |
| IEEE Joumal of Selected Topics in Quantum Electronics | 3 | 1997 | 831_835 | |
| Author | Title of Article | |||
| H. -C. Ko and Sg. Fujita | Cleaved Edge Overgrowth of ZnSe on GaAs (110) by Molecular Beam Epitaxy | |||
| Journal | Volume | Year | Pages Concerned | |
| Journal of Korean Physical Society | 30 | 1997 | 62_64 | |
| Author | Title of Article | |||
| Y. Narukawa, Y. Kawakami, Sz. Fujita, Sg. Fujita and S. Nakamura | Recombination dynamics of localized excitons in In0.20Ga0.80N- In0.05Ga0.95N multiple quantum wells | |||
| Journal | Volume | Year | Pages Concerned | |
| Phys. Rev. B | 55 | 1997 | R1938_R1941 | |
| Author | Title of Article | |||
| Y. Kawakami, Y. Narukawa, Sz. Fujita, Sg. Fujita and S. Nakamura | Excitonic Properties in InGaN/GaN MQW Structures | |||
| Journal | Volume | Year | Pages Concerned | |
| Nonlinear Optics | 18 | 1997 | 277_284 | |
| Author | Title of Article | |||
| Y. Kawakami, Y. Narukawa, Sz. Fujita, Sg. Fujita and S. Nakamura | Excitonic Properties in InGaN/GaN MQW Structures | |||
| Journal | Volume | Year | Pages Concerned | |
| Nonlinear Optics | 18 | 1997 | 277_284 | |
| Author | Title of Article | |||
| Y. Narukawa, Y. Kawakami, M. Funato, Sz. Fujita, Sg. Fujita and S. Nakamura | Role of self-formed InGaN quantum dots for exciton localization in the purple laser diode Emitting at 420 nm | |||
| Journal | Volume | Year | Pages Concerned | |
| Appl. Phys. Lett. | 70 | 1997 | 981_983 | |
| Author | Title of Article | |||
| S. Tanaka, H. Hirayama, Y. Aoyagi, Y. Narukawa, Y. Kawakami, Sz. Fujita and Sg. Fujita | Stimulated Emission from Optically Pumped GaN Quantum Dots | |||
| Journal | Volume | Year | Pages Concerned | |
| Applied Physics Letters | 71 | 1997 | 1299_1301 | |
| Author | Title of Article | |||
| Y. Narukawa, S. Saijou, Y. Kawakami, Sz. Fujita, Sg. Fujita and S. Nakamura | Time-Resolved Electroluminescence Spectroscopy of InGaN Single Quantum Well LEDs | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Crystal Growth | 189/190 | 1998 | 593_596 | |
| Author | Title of Article | |||
| Y. Narukawa, K. Sawada, K. Omae, Y. Kawakami, Sz. Fujita, Sg. Fujita and S. Nakamura | Emission Mechanism of Localized Excitons in InGaN Single Quantum Wells | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Crystal Growth | 189/190 | 1998 | 606_610 | |
| Author | Title of Article | |||
| T. Onishi, H. Adachi, I. Kidoguchi, M. Mannoh, A. Takamori, Y. Narukawa, Y. Kawakami and Sg. Fujita | Doping level and type of GaInP saturable absorbing layers for realizing pulsating 650-nm-band AlGaInP laser diodes | |||
| Journal | Volume | Year | Pages Concerned | |
| IEEE Photonics Technology Letters | 10 | 1998 | 1368_1370 | |
| Author | Title of Article | |||
| I. S. Hauksson, Y. Kawakami, Sz. Fujita, Sg. Fujita, I. Galbraith, K. A. Prior and B. C. Cavenett | Biexciton emission from thick ZnSe epilayer grown by molecular beam epitaxy | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Appl. Phys. | 83 | 1998 | 2035_2040 | |
| Author | Title of Article | |||
| H. C. Ko, D. C. Park, Y. Kawakami, Sz. Fujita and Sg. Fujita | Localized excitonic emissions of ZnCdSe/ZnSe quantum wells grown on a GaAs(110) cleaved surface | |||
| Journal | Volume | Year | Pages Concerned | |
| Appl. Phys. Lett. | 73 | 1998 | 1388_1390 | |
| Author | Title of Article | |||
| D. C. Park, H. C. Ko, Sz. Fujita and Sg. Fujita | Growth of GaN on indium tin oxide/glass substrates by RF plasma-enhanced chemical vapor deposition method | |||
| Journal | Volume | Year | Pages Concerned | |
| Japanese Journal of Applied Physics | 37 | 1998 | L294_L296 | |
| Author | Title of Article | |||
| J. Suda, M. Ogawa, K. Sakurai, Y. Kawakami, Sz. Fujita and Sg. Fujita | Optical properties of light-hole excitons in ZnSSe/ZnMgSSe tensile-strained quantum wells | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Crystal Growth | 184/185 | 1998 | 863_866 | |
| Author | Title of Article | |||
| H. C. Ko, Y. Kawakami, Sz. Fujita and Sg. Fujita | New approach to the fabrication of CdSe/ZnSe quantum dots using a cleaved-edge overgrowth technique | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Crystal Growth | 184/185 | 1998 | 283_287 | |
| Author | Title of Article | |||
| M. Funato, Sz. Fujita and Sg. Fujita | A comparative study on deep levels in p-ZnSe grown by MBE, MOMBE and MOVPE | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Crystal Growth | 184/185 | 1998 | 495_499 | |
| Author | Title of Article | |||
| Y. Kawakami, Y. Narukawa, K. Sawada, S. Saijyo, Sz. Fujita, Sg. Fujita and S. Nakamura | Recombination dynamics of localized excitons in self-formed InGaN quantum dots | |||
| Journal | Volume | Year | Pages Concerned | |
| Materials Science and Engineering | B50 | 1998 | 256_263 | |
| Author | Title of Article | |||
| H. C. Ko, Y. Kawakami, Sz. Fujita and Sg. Fujita | Atomic force microscopy study of self-organized ZnCdSe nanostructures fabricated on the cleavage-induced GaAs(110) surface | |||
| Journal | Volume | Year | Pages Concerned | |
| Applied Surface Science | 130/132 | 1998 | 719_723 | |
| Author | Title of Article | |||
| S. Yamaguchi, H. Kurusu, Y. Kawakami, Sz. Fujita and Sg. Fujita | Role of localized excitons in the stimulated emission in ultra-thin CdSe/ZnSe/ZnSSe single quantum-well structures | |||
| Journal | Volume | Year | Pages Concerned | |
| Superlattices and Microstructures | 23 | 1998 | 1189_1195 | |
| Author | Title of Article | |||
| Y. Narukawa, S. Saijou, Y. Kawakami, Sg. Fujita and S. Nakamura | Radiative and nonradiative recombination processes in ultraviolet light-emitting diode composed of an In0.02Ga0.98N active layer | |||
| Journal | Volume | Year | Pages Concerned | |
| Applied Physics Letters | 74 | 1999 | 558_560 | |
| Author | Title of Article | |||
| Y. Narukawa, Y. Kawakami, Sg. Fujita and S. Nakamura | Dimensionality of excitons in lesar-diode structures composed of InxGal-xN multiple quantum wells | |||
| Journal | Volume | Year | Pages Concerned | |
| Physical Review B | 59 | 1999 | 10283_10288 | |
| Author | Title of Article | |||
| Y. Narukawa, Y. Kawakami, Sg. Fujita and S. Nakamura | Recombination dynamics in InxGal-xN multiple-quantum-well based laser diodes under high photoexcitation | |||
| Journal | Volume | Year | Pages Concerned | |
| Phys. Stat. Sol. (a) | 176 | 1999 | 39_43 | |
| Author | Title of Article | |||
| M. Fudeta, H. Asahi, K. Asami, Y. Narukawa, Y. Kawakami, J. -H. Noh, J. Mori, D. Watanabe, Sg. Fujita and S. -I. Gonda | Time-resolved photoluminescence study of strain-induced quantum dots self-formed in GaP/InP short-period superlattice | |||
| Journal | Volume | Year | Pages Concerned | |
| Japanese Journal of Applied Physics | 38 | 1999 | L1006_L1008 | |
| Author | Title of Article | |||
| Y. Kawakami, Y. Narukawa, K. Omae, Sg. Fujita and S. Nakamura | Dimensionality of excitons in InGaN-based light emitting devices | |||
| Journal | Volume | Year | Pages Concerned | |
| physica state solid (a), | 178 | 2000 | 331_336 | |
| Author | Title of Article | |||
| S. Yamaguchi, H. Kurusu, Y. Kawakami, Sh. Fujita and Sg. Fujita | Effect of degree of localization and confinement dimensionality of exitons on their recombination process in CdSe/ZnSe/ZnSxSel-x single quantum well structures | |||
| Journal | Volume | Year | Pages Concerned | |
| Physical Review B, | 61 | 2000 | 10303_10313 | |
| Author | Title of Article | |||
| T. Izumi, Y. Narukawa, K. Okamoto, Y. Kawakami, Sg. Fujita and S. Nakamura | Time-resolved photoluminescence spectroscopy in GaN-based semiconductors with micron spatial resolution | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Luminescence | 87/89 | 2000 | 1196_1198 | |
| Author | Title of Article | |||
| K. Okamoto, H. -C. Ko, Y. Kawakami and Sg. Fujita | Time-space resolved photoluminescence from (Zn, Cd)Se-based quantum structures | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Cryst. Growth | 214/215 | 2000 | 639_645 | |
| Author | Title of Article | |||
| Y. Kawakami, Y. Narukawa, K. Omae, Sg. Fujita and S. Nakamura | Dynamics of optical gain in InxGal-xN multi-quantum-well-based laser diodes | |||
| Journal | Volume | Year | Pages Concerned | |
| App. Phys. Lett. | 77 | 2000 | 2151_2153 | |
| Author | Title of Article | |||
| A. Kaneta, T. Izumi, K. Okamoto, Y. Kawakami, Sg. Fujita, Y. Narita, T. Inoue and T. Mukai | Spatial Inhomogeneity of Photoluminescence in an InGaN-Based Light-Emitting Diode Structure Probed by Near-Field optical Microscopy Under Illumination-Collection Mode | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. App. Phys. | 40 | 2001 | 110_111 | |
| Author | Title of Article | |||
| Y. Kawakami, K. Omae, A. Kaneta, K. Okamoto, T. Izumi, S. Sajou, K. Inoue, Y. Narukawa, T. Mukai and Sg. Fujita | Radiative and Nonradiative Recombination Processes in GaN-Based Semiconductors | |||
| Journal | Volume | Year | Pages Concerned | |
| physica status solidi (a), | 183 | 2001 | 41_50 | |
| Author | Title of Article | |||
| Y. Kawakami, K. Omae, A. Kaneta, K. Okamoto, T. Izumi, S. Sajou, K. Inoue, Y. Narukawa, T. Mukai and Sg. Fujita | Radiative and Nonradiative Recombination Processes in GaN-Based Semiconductors | |||
| Journal | Volume | Year | Pages Concerned | |
| Physica Status Solidi (a) | 183 | 2001 | 41_50 | |
| Author | Title of Article | |||
| T. Honda, M. Tsubamoto, Y. Kuga and H. Kawanishi | Optical Gain in BGaN Lattice-Matched to (0001) 6H-SiC | |||
| Journal | Volume | Year | Pages Concerned | |
| Mat. Res. Soc. Symroc. | 482 | 1998 | 1125_1129 | |
| Author | Title of Article | |||
| T. Shirasawa, N. Mochida, A. Inoue, T. Honda, T. Sakaguchi, F. Koyama and K. Iga | Interface Control of GaN/AlGaN Quantum Well Structures in MOVPE Growth | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Crystal Growth | 189/190 | 1998 | 124_127 | |
| Author | Title of Article | |||
| N. Mochida, T. Honda, T. Shirasawa, A. Inoue, T. Sakaguchi, F. Koyama and K. Iga | Crystal Orientation Dependence of P-Type Contact Resistance of GaN | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Crystal Growth | 189/190 | 1998 | 716_719 | |
| Author | Title of Article | |||
| T. Honda, T. Miyamoto, T. Sakaguchi, H. Kawanishi, F. Koyama, and K. Iga | Effect of piezo electric field on emission characteristics GaN/AlGaN quantum wells | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Crystal Growth | 180/190 | 1998 | 644_648 | |
| Author | Title of Article | |||
| M. Shibata, M. Kurimoto, J. Yamamoto, T. Honda and H. Kawanishi | GaN/BAIN Heterostructure Grown on (0001) 6H-SiC by Metalorganic Vapor Phase Epitaxy, | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Crystal Growth | 189/190 | 1998 | 445_447 | |
| Author | Title of Article | |||
| J. Yamamoto, M. Shibata, M. Kurimoto, T. Honda and H. Kawanishi | Orign of Cracks in GaN/AlGaN DH Structure Grown on 6H-SiC by Metalorganic VApor Phase Epitaxy | |||
| Journal | Volume | Year | Pages Concerned | |
| Journal of Crystal Growth - The Special Issue for the 2nd ICNS'97 - (to be published) | 189/190 | 1998 | 193_196 | |
| Author | Title of Article | |||
| M. Kurimoto, M. Shibata, J. Yamamoto, T. Honda and H. Kawanishi | Direct Growth of GaN on (0001)6H-SiC by Low Pressure MOVPE with Flow Channel | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Crystal Growth | 189/190 | 1998 | 189_192 | |
| Author | Title of Article | |||
| T. Honda, A. Inoue, M. Mori, T. Shirasawa, N. Mochida, K. Saotome, T. Sakaguchi, A. Ohtomo, M. Kawasaki, H. | GaN Growth on Ozonized Sahire (0001) substrates by MOVPE | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Crystal Growth | 195 | 1998 | 319_322 | |
| Author | Title of Article | |||
| M. Watanabe, T. Kobayashi, T. Kawahashi, A. Hino, T. Watanabe, T. Matumoto and M. Suzuki | 195Pt NMR spectra and biological activity of platinum(IV) complexes with dipepties"J. Inorganic Biochemistry, vol. 73, 1-5 (1999 | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Inorganic Biochemistry | 73 | 199 | 1_5 | |
| Author | Title of Article | |||
| T. Honda, T. Shirasawa, N. Mochida, A. Inoue, A. Matsutani, T. Sakaguchi, F. Koyama, H. Kawanishi and K. Iga | Design and Fabrication Process Consideration of GaN-Based Surface Emitting Lasers | |||
| Journal | Volume | Year | Pages Concerned | |
| Electronics & Communications in Japan, Part 2 | 82 | 1999 | 97_104 | |
| Author | Title of Article | |||
| T. Honda, Y. Yamamoto and H. Kawanishi | Direct Growth of GaN on (0001) 6H-SiC | |||
| Journal | Volume | Year | Pages Concerned | |
| Blue Laser and Light Emitting Diodes II, Ed. K. Onabe et al., Ohmsha, Tokyo | 1999 | 150_153 | ||
| Author | Title of Article | |||
| T. Honda, H. Kawanishi, T. Sakaguchi, F. Koyama and K. Iga | Characteristic Temperature Estimation for GaN-Based Lasers | |||
| Journal | Volume | Year | Pages Concerned | |
| MRS Internet J. Nitride Semicond. Res. | 4S1 | 1999 | G6.2_ | |
| Author | Title of Article | |||
| M. Kurimoto, T. Nakata, Y. Ishihara, M. Shibata, T. Honda and H. Kawanishi | Tensile Strain Introduced in AlN Layer Grown by Metal-Organic Vapor-Phase Epitaxy | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 38 | 1999 | L551_L553 | |
| Author | Title of Article | |||
| Y. Ishihara, J. Yamamoto, M. Kurimoto, T. Takano, T. Honda, and H. Kawanishi | Dependence of Crystal Quality on Residual Strain-Controlled Thin AlN Layer Grown by Metalorganic Vapor Phase Epitaxy | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 38 | 1999 | L1296_L1298 | |
| Author | Title of Article | |||
| M. Kurimoton, T. Nakada, Y. Ishihara, M. Shibata, T. Takano, J. Yamamoto, T. Honda and H. Kawanishi | Possibility of Strain Control in AlN Layer Grown by MOVPE on (0001)6H-SiC with GaN/AlN Buffer | |||
| Journal | Volume | Year | Pages Concerned | |
| Phys. Stat. Sol. (a) | 176 | 1999 | 665_669 | |
| Author | Title of Article | |||
| T. Honda, M. Shibata, M. Kurimoto, M. Tsubamoto, J. Yamamoto and H. Kawanishi | Band-Gap Energy and Effective Mass of BGaN | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 39 | 2000 | L2389_L2393 | |
| Author | Title of Article | |||
| T. Honda, M. Kurimoto, M. Shibata and H. Kawanishi | Excitonic emission of BGaN grown on (0001) 6H-SiC by metal-organic vapor-phase epitaxy | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Luminescence | 87-89 | 2000 | 1274_1276 | |
| Author | Title of Article | |||
| T. Takano, M. Kurimoto, J. Yamamoto, M. Shibata, Y. Ishihara M. Tsubamoto, T. Honda and H. Kawanishi | Room Temperature Photoluminescence from BAlGaN-Based Double or Single Heterostructures for UV Laser Diode | |||
| Journal | Volume | Year | Pages Concerned | |
| Physica status Solidi Rapid Research Note (a), | 180 | 2000 | 231_234 | |
| Author | Title of Article | |||
| T. Takano, M. Kurimoto, J. Yamamoto, Y. Ishihara, M. Horie and H. Kawanishi | Improved 250nm UV PL Spectra from BAlGaN/AlN MQW on 6H-SiC Substrate by MOVPE Using TEB | |||
| Journal | Volume | Year | Pages Concerned | |
| Proc. Int. Warkshop on Nitride Semiconductors IPAP Conf. Series 1 | 2000 | 147_149 | ||
| Author | Title of Article | |||
| M. Kurimoto, T. Takano, J. Yamamoto, Y. Ishihara, M. Horie, M. Tsubamoto and H. Kawanishi | Growth of BGaN/AlGaN multi-quantum-well structure by metalorganic vapor phase epitaxy | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Crystal Growth, | 221 | 2000 | 378_381 | |
| Author | Title of Article | |||
| T. Honda, N. Fujita, K. Maki, Y. Yamamotom and H. Kawanishi | Initial gowth monitoing of GaN epitaxy on 6H-SiC by metal-organicmolecular beam epitaxy | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Crystal Growth | 209 | 2000 | 392_395 | |
| Author | Title of Article | |||
| M. Mori, A. Kikuchi, and K. Kishino | Characterization of GaN grown with a high growth rate by RF-radical source molecular beam epitaxy | |||
| Journal | Volume | Year | Pages Concerned | |
| Institute of Physics Conference Series : Chapter 5 (IOP Publishing Ltd) | 142 | 1996 | 839_842 | |
| Author | Title of Article | |||
| I. Nomura, K. Kishino, and A. Kikuchi | Theoretical analysis of cubic GaInN/GaN/AlGaN quantum well lasers | |||
| Journal | Volume | Year | Pages Concerned | |
| Institute of Physics Conference Series : Chapter 6 (IOP Publishing Ltd) | 142 | 1996 | 1011_1014 | |
| Author | Title of Article | |||
| I. Nomura, K. Kishino, and A. Kikuchi | Theoretical estimation of threshold current of cubic GaInN/GaN/AlGaN quantum well lasers | |||
| Journal | Volume | Year | Pages Concerned | |
| Solid-State Electronics | 41 | 1997 | 283_286 | |
| Author | Title of Article | |||
| I. Nomura, K. Kishino, and A. Kikuchi | Theoretical estimation of threshold current of cubic GaInN/GaN/AlGaN quantum well lasers | |||
| Journal | Volume | Year | Pages Concerned | |
| Solid-State Electronics | 41 | 1997 | 283_286 | |
| Author | Title of Article | |||
| M. Yoshizawa, A. Kikuchi, M. Mori, N. Fujita, and K. Kishino | Growth of self-organized GaN nano-structures on A1203 (0001) by RF-radical source molecular beam epitaxy | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 36 | 1997 | L459_L462 | |
| Author | Title of Article | |||
| T. Morita, H. Shimbo, T. Nagano, I. Nomura, A. Kikuchi, and K. Kishino | Refractive index measurements of MgZnCdSe II-VI compound semiconductors grown on InP substrates and fabrications of 500-600 nm range MgZnCdSe distributed Bragg reflectors | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Appl. Phys. | 81 | 1997 | 7575_7579 | |
| Author | Title of Article | |||
| M. Yoshizawa, A. Kikuchi, M. Mori, N. Fujita, and K. Kishino | Self-organization of GaN nano-structures on c-A1203 by RF-radical gas source molecular beam epitaxy | |||
| Journal | Volume | Year | Pages Concerned | |
| Institute of Physics Conference Series (IOP Publishing Ltd) | 1997 | |||
| Author | Title of Article | |||
| A. Kikuchi, M. Yoshizawa, M. Mori, N. Fujita, K. Kushi, H. Sasamoto and K. Kishino | Shutter Control Method for Control of Al Contents in AlGaN Quasi-ternary Compounds grown by RF-MBE | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Crystal Growth | 189/190 | 1998 | 109_113 | |
| Author | Title of Article | |||
| M. Yoshizawa, A. Kikuchi, N. Fujita, K. Kushi, H. Sasamoto and K. Kishino | Self-organization of GaN/A10.18Ga0.82N multi-layer nano-columns on (0001)A1203 by RF molecular beam epitaxy for fabricating GaN quantum disks | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Cryst. Growth | 189-190 | 1998 | 138_141 | |
| Author | Title of Article | |||
| N. Fujita, M. Yoshizawa, K. Kushi, H. Sasamoto, A. Kikuchi and K. Kishino | Epitaxial Growth of GaN with a High Growth Rate of 1.4mm/hr by RF-radical Source Molecular Beam Epitaxy | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Crystal Growth | 189/190 | 1998 | 385_389 | |
| Author | Title of Article | |||
| K. Kishino et al. | High speed growth of device quality GaN and InGaN by RF-MBE | |||
| Journal | Volume | Year | Pages Concerned | |
| Materials Science and Engineering | B 59 | 1999 | 65_68 | |
| Author | Title of Article | |||
| K. Kishino et al. | InGaN/GaN MQW and Mg-doped GaN growth using a shutter control method by RF-Molecular beam epitaxy | |||
| Journal | Volume | Year | Pages Concerned | |
| Phys. Stat. Sol. (a) | 176 | 1999 | 273_277 | |
| Author | Title of Article | |||
| K. Kishino et al. | 2.6mm/h high speed growth of GaN by RF-molecular beam epitaxy and improvement of crystal quality by migration enhanced epitaxy | |||
| Journal | Volume | Year | Pages Concerned | |
| Phys. Stat. Sol. (a) | 176 | 1999 | 323_328 | |
| Author | Title of Article | |||
| D. Sugihara, A. Kikuchi, K. Kusakabe, S. Nakamura, Y. Toyoura, T. Yamada and K. Kishino | High-quality GaN on AIN Multiple Intermediate Layer with Migration Enhanced Epitaxy by RF-Molecular Beam Epitaxy | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 39 | 2000 | L197_L199 | |
| Author | Title of Article | |||
| A. Kikuchi, T. Yamada, S. Nakamura, K. Kusakabe, D. Sugihara and K. Kishino | Improvement of Crystal Quality of RF-Plasma-Assisted Molecular Beam Epitaxy Grown Ga-Polarity GaN by High-Temperature Grown AIN Multiple Intermediate lavers | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 39 | 2000 | L330_L333 | |
| Author | Title of Article | |||
| D. Sugihara, A. Kikuchi, K. Kusakabe, S. Nakamura, Y. Toyoura, T. Yamada and K. Kishino | Suppression of Inversion Domains and Decrease of Threading Dislocations in Migration Enhanced Epitaxial GaN by RF-Molecular Beam Epitaxv | |||
| Journal | Volume | Year | Pages Concerned | |
| phys. stat. sol., (a) | 180 | 2000 | 65_71 | |
| Author | Title of Article | |||
| A. Kikuchi, T. Yamada, K. Kusakabe, D. Sugihara, S. Nakamura and K. Kishino | Reduction of Threading Dislocations in RF-MBE Grown Polarity Controlled GaN by AIN Multiple Interlayers | |||
| Journal | Volume | Year | Pages Concerned | |
| IPAP Conference Series 1 Proceedings of International Workshop on Nitride Semiconductors | 2000 | 154_157 | ||
| Author | Title of Article | |||
| Y. Toyoura, K. Kusakabe, T. Yamada, R. Bannai, A. Kikuchi and K. Kishino | GaN-Based Resonant Cavity-Enhanced UV-Photodetectors | |||
| Journal | Volume | Year | Pages Concerned | |
| IPAP Conference Series 1 Proceedings of International Workshop on Nitride Semiconductors | 2000 | 907_910 | ||
| Author | Title of Article | |||
| K. Kusakabe, K. Kishino, A. Kikuchi, T. Yamada, D. Sugihara and S. Nakamura | Reduction of Threading Dislocations in Migration Enhanced Epitaxy Grown GaN with N-Polarity by Use of AIN Multiple Interlayer | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Cryst. Growth, (to be published) | 2001 | |||
| Author | Title of Article | |||
| A. Kikuchi, T. Yamada, S. Nakamura, K. Kusakabe, D. Sugihara and K. Kishino | Improvement of Electrical Property and Surface Morphology of GaN Grown by RF-plasma Assisted Molecular Beam Epitaxy by Introduction of Multiple AIN Intermediate Laver | |||
| Journal | Volume | Year | Pages Concerned | |
| Materials Science & Engineering B, (to be published) | 2001 | |||
| Author | Title of Article | |||
| K. Kusakabe, A. Kikuchi and K. Kishino | Characterization of Overgrown GaN Layers on Nano-Columns Grown by RF-Molecular Beam Epitaxy | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 40 | 2001 | L192_L194 | |
| Author | Title of Article | |||
| K. Kusakabe, A. Kikuchi and K. Kishino | Step Flow Surface Morphology in Plasma Assisted Molecular Beam Epitaxy Grown GaN | |||
| Journal | Volume | Year | Pages Concerned | |
| MRS Internet Journal of Nitride Semiconductor Research | 2001 | |||
| Author | Title of Article | |||
| K. Kusakabe, T. Yamada, Y. Toyoura, R. Bannai, A. Kikuchi and K. Kishino | Quasi-Free Standing GaN Epitaxial Layer Grown on Nano-Columnar GaN by RF-Plasma Assisted Molecular Beam Epitaxy | |||
| Journal | Volume | Year | Pages Concerned | |
| Proceedings of International Symposium on Compound Semiconductors 2000, (to be published) | 2001 | |||
| Author | Title of Article | |||
| H. Amano, T. Takeuchi, S. Sota, H. Sakai and I. Akasaki | Structural and Optical Properties of Nitride Based Heterostructure and Quantum Well Structure | |||
| Journal | Volume | Year | Pages Concerned | |
| Mat. Res. Soc. Symp. Proc. | 449 | 1997 | 1143_1150 | |
| Author | Title of Article | |||
| T. Takeuchi, S. Sota, M. Katsuragawa, M. Komori, H. Takeuchi, H. Amano and I. Akasaki | Quantum-Confined Stark Effect due to Piezoelectric Fields in GaInN Strained Quantum Wells | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 36 | 1997 | L382_L385 | |
| Author | Title of Article | |||
| S. Chichibu, T. Azuhata, H. Amano and I. Akasaki | Optical Properties of Tensile-strained Wurtzite GaN Epitaxial layers | |||
| Journal | Volume | Year | Pages Concerned | |
| Appl. Phys. Lett. | 70 | 1997 | 2085_2087 | |
| Author | Title of Article | |||
| Y. Kaneko, N. Yamada, T. Takeuchi | Melt-back Etching of GaN | |||
| Journal | Volume | Year | Pages Concerned | |
| Solid-State Electron | 41 | 1997 | 295_298 | |
| Author | Title of Article | |||
| I. Akasaki and H. Amano | Progress and prospect of group-III nitride semiconductors | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Crystal Growth | 175/176 | 1997 | 29_36 | |
| Author | Title of Article | |||
| I. Akasaki and H. Amano | Crystal Growth and Conductivity of Group III Nitride Semiconductors and Thir Application to Short Wavelength Light Emitters | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 36 | 1997 | 5393_5408 | |
| Author | Title of Article | |||
| I. Akasaki | Progress in Crystal Growth and Conductivity Control of III Nitride Semiconductors -Seeking Blue Emission | |||
| Journal | Volume | Year | Pages Concerned | |
| Ext. Abstr. of the Intl. Conf. on Solid State Devices and Mater., Hamamatsu, 2-3, | 1997 | |||
| Author | Title of Article | |||
| S. Yamaguchi, H. Amano and I. Akasaki et. al | Observation of photoluminescence from All-xInxN heteroepitaxial films grown by metalorganic vapor phase epitaxy | |||
| Journal | Volume | Year | Pages Concerned | |
| Appl. Phys. Lett. | 73 | 1998 | 830_831 | |
| Author | Title of Article | |||
| H. Kato, H. Amano, I. Akasaki and N. Yamada et al. | GaN Based Laser Diode with Focused Ion Beams Etched Mirrors | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 37 | 1998 | 444_446 | |
| Author | Title of Article | |||
| T. Takeuchi, C. Wetzel, H. Amano, I. Akasaki and N. Yamada et. al | Determination of Piezoelectric Fields in GaInN Strained Quantum Wells Using the Quantum-confined Stark effect | |||
| Journal | Volume | Year | Pages Concerned | |
| Appl. Phys. Lett. | 73 | 1998 | 1691_1693 | |
| Author | Title of Article | |||
| T. Takeuchi, S. Sota, H. Sakai, H. Amano, I. Akasaki, Y. Kaneko, S. Nakagawa, Y. Yamaoka, N. Yamada | Quantum-confined Stark Effect in Strained GaInN Quantum Wells on Sapphire (0001) | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Crystal Growth | 189/190 | 1998 | 616_620 | |
| Author | Title of Article | |||
| T. Takeuchi, T. Detchprohm, M. Iwaya, N. Hayashi, K. Isomura, K. Kimura, and M. Yamaguchi H. Amano and I. Akasaki Yw. Kaneko, R. Shioda, S. Watanabe, T. Hidaka, Y. Yamaoka. Ys. Kaneko and N. Yamada | Improvement of far-field pattern in nitride laser diodes | |||
| Journal | Volume | Year | Pages Concerned | |
| Appl. Phys. Lett. | 75 | 1999 | 2960_2962 | |
| Author | Title of Article | |||
| I. Akasaki, S. Kamiyama, T. Detchprohm, T. Takeuchi and H. Amano | Growth of Crack-Free Thick AlGaN Layer and its Application to GaN Based Laser Diodes | |||
| Journal | Volume | Year | Pages Concerned | |
| MRS Internet J. Nitride Semicond. Res., | 2000 | |||
| Author | Title of Article | |||
| M. Iwaya, S. Terao, N. Hayashi, T. Kashima, H. Amano, I. Akasaki | Realization of crack-free and high-quality thick AlxGal-xN for UV optoelectronics using low-temperature interlayer | |||
| Journal | Volume | Year | Pages Concerned | |
| Applied Surface Science | 159/160 | 2000 | 405_413 | |
| Author | Title of Article | |||
| T. Sato, M. Iwaya, K. Isomura, T. Ukai, S. Kamiyama, H. Amano, I. Akasaki | Theoretical Analysis of Optical Transverse-Mode Control on GaN-Based Laser Diodes | |||
| Journal | Volume | Year | Pages Concerned | |
| IEICE TRANSACTIONS ON ELECTRONICS E SERIES C, | 83 | 2000 | 573_578 | |
| Author | Title of Article | |||
| S. Kamiyama, M. Iwaya, H. Amano and I. Akasaki | Performance of GaN-Based Semiconductor Laser with Spectral Broadening due to Compositional Inhomogeneity in GaInN Active Layer | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 39 | 2000 | 390_392 | |
| Author | Title of Article | |||
| N. Hayashi, S. Kamiyama, T. Takeuchi, M. Iwaya, H. Amano, I. Akasaki, S. Watanabe, Y. Kaneko and N. Yamada | Electrical conductivity of low temperature deposited Al0.1Ga0.9N interlayer | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 39 | 2000 | 6493_6495 | |