Summary of Research Project Results Under the JSPS FY2000
"Research for the future Program"



1.Research Institution Teikyo University of Science and Technology
 
2.University-Industry Cooperative Research Committee 162nd Committee on Short-wavelength Opto-electronic Devices
 
3.Term of Project FY1996〜FY2000
 
4.Project Number 96R16201
 
5.Title of Project Research on Short-Wavelength Semiconductor Optoelectronic Devices for Ultra High-Density and Ultra High-Speed Information Processing

6.Projetct Leader
Name Institution,Department Title of Position
Kiyoshi Takahashi Teikyo University of Science and Technology, Dept. of Media Science Professor

7.Core Members

Names Institution,Department Title of Position
Akihiko Yoshikawa Chiba University, Dept. of Electronics and Mechanical Engineering Professor
Fumio Hasegawa University of Tsukuba, Institute of Applied Physics Professor
Shigeo Fujita Kyoto University, Dept. of Electronic Science and Engineering Professor

8.Cooperating Researchers

Names Institution,Department Title of Position
Ryuhei Kimura Teikyo University of Science and Technology, Dept. of Media Science Associate Professor
Anwei Jia Chiba University, Dept. of Electronics and Mechanical Engineering Research Associate

9.Summary of Research Results

In order to achieve the objectives of this research project, two subgroups have been organized; one is Teikyo University-group and another is Chiba University-group. About 10 researchers/members have been included in each subgroup, and each researcher has done their research under their own research objectives. All of the members have completed their research and obtained remarkable results in the areas/topics as followings;
(1) Epitaxy, characterization and material control of wide bandgap semiconductors such as III-nitrides and II-VI compounds: (a) epitaxy and material control of cubic-phase nitrides, (b) epitaxy and material control of hexagonal phase nitrides by MOVPE, MBE and HVPE, (c) design and growth of new hexagonal-phase II-VI compounds-based light emitting devices, and (d) characterization and control of crystalline structure polarity in hexagonal-phase wide bandgap semiconductors.
(2) Design, fabrication and characterization of quantum well/dots structure by wide bandgap semiconductors; (a) fluctuation of In composition in InGaN/GaN quantum wells and selforganization of In-rich quantum dots, (b) growth and characterization of II-VI compounds quantum wells and quantum dots.
(3) Design and characterization of short-wavelength optoelectronic devices/systems;
(a) Design and fabrication of GaN-based surface emitting laser diodes, (b) design of ultra fast optical modulators using excitonic effects, (c) design and characterization of violet laser diodes.

10.Key Words

(1)widegap semiconductors、(2)short wavelength devices、(3)III-nitrides
(4)II-VI compounds、(5)epitaxy、(6)violet laser diodes
(7)surface emitting laser diodes、(8)quantum well/dots structure、(9)ultra fast optical modulators

11.References

[Reference Articles]
Author Title of Article
K. Yamaguchi, Z. X. Qin, H. Nagano, M. Kobayashi, A. Yoshikawa, and K. Takahashi Atomically Flat GaAs(001) Surface Obtained by High Temperature Treatment with Atomic Hydrogen Irradiation
Journal Volume Year Pages Concerned
Jpn. J. Appl. Phys. 36 1997 L1367_L1369

Author Title of Article
A. Yoshikawa, H. Nagano, Z. Qin, Y. Sugure, A. W. Jia, M. Kobayashi, M. Shimotomai, Y. Kato and K. Takahashi Effect of Atomic-Hydrogen treatment of (001)GaAs Substrate at "High Temperatures" on RF Plasma-Assisted Molecular Beam Epitaxy of Cubic GaN
Journal Volume Year Pages Concerned
Mat. Res. Soc. Symp. Proc. 482 1997 227_232

Author Title of Article
A. Yoshikawa, Z. Qin, H. Nagano, Y. Sugure, A. W. Jia, M. Kobayashi, M. Shimotomai, Y. Kato and K. Takahashi High-Resolution X-Ray Diffraction Analysis of "Device-Quality" Cubic GaN Grown on (001)GaAs SUBSTRATE PREPARED BY Atomic-Hydrogen treatment at "High Temperatures"
Journal Volume Year Pages Concerned
Mat. Res. Soc. Symp. Proc. 482 1997 465_470

Author Title of Article
R. Kimura, Y. Gotoh, T. Nagai, Y. Uchida, T. Matsuzawa, K. Takahashi and G. C. Schulz A Study of Initial Growth Mechanism of c-GaN on GaAs(100) by Molecular Beam Epitaxy
Journal Volume Year Pages Concerned
J. Crystal Growth 189/190 1998 406_410

Author Title of Article
M. Kobayashi, S. Nakamura, K. Wakao, A. Yoshikawa and K. Takahashi Molecular beam epitaxy of CdS Self-Assembled Quantum Dots on ZnSe
Journal Volume Year Pages Concerned
J. Vac. Sci. Technol. B16 1998 1316_1320

Author Title of Article
M. Kobayashi, C. Setiagung, K. Wakao, S. Nakamura, A. Yoshikawa and K. Takahashi MBE growth and characterization of ZnSTe and ZnMgSTe alloys
Journal Volume Year Pages Concerned
J. Crystal Growth 184/185 1998 66_69

Author Title of Article
A. Yoshikawa, Z. Qin, H. Nagano, Y. Sugure, A. W. Jia, M. Kobayashi, Y. Kato and K. Takahashi MBE Growth of Device-Quality Cubic GaN on Atomically Flat (001)GaAs Prepared by Atomic-Hydrogen Treatment at High-Temperatures
Journal Volume Year Pages Concerned
Slicon Carbide III-nitrides and Related Materials-Part 2, Materials Science Forum 264-268 1998 1221_1224

Author Title of Article
Z. Qin, N. Nagano, Y. Sugure, A. W. Jia,, M. Kobayashi, Y. Kato, A. Yoshikawa, and K. Takahashi High-Resolution X-ray Diffraction Anylysis of Cubic GaN Grown on (001) GaAs by RF-Radical Source Molecular Beam Epitaxy
Journal Volume Year Pages Concerned
J. Crystal Growth 189/190 1998 425_429

Author Title of Article
H. Nagano, Z. Qin, A. W. Jia, M. Kobayashi, Y. Kato, A. Yoshikawa, and K. Takahashi Atomically Flat (001)GaAs Surface Prepared by Two-Step Atomic-Hydrogen Treatment and Its Application to Hereroepitaxy of GaN
Journal Volume Year Pages Concerned
J. Crystal Growth 189/190 1998 265_269

Author Title of Article
Y. Taniyasu, R. Ito, N. Shimoyama, M. Kurihara, A. W. Jia, M. Kobayashi, Y. Kato, A. Yoshikawa, and K. Takahashi In-Situ Monitoring of Initial Growth Stages of GaN Films on GaAs(001) in Low-Pressure MOVPE by Spectroscopic Ellipsonmetry
Journal Volume Year Pages Concerned
J. Crystal Growth (to be published) 189/190 1998 305_309

Author Title of Article
M. Murayama and T. Nakayama Reflectance Difference Spectra Calculations of GaAs (001) As- and Ga-rich Reconstruction Surface Structures
Journal Volume Year Pages Concerned
Jpn. J. Appl. Phys. 37 1998 4110_4114

Author Title of Article
M. Ishikawa and T. Nakayama Stacking and Optical Properties of Layered In2<・SUB>Se3<・SUB>
Journal Volume Year Pages Concerned
Jpn. J. Appl. Phys. 37 1998 L1125_L1127

Author Title of Article
S. Nakamura, K. Kitamura, H. Umeya, A. W. Jia, M. Kobayashi, A. Yoshikawa, S. Shimotomai, Y. Kato and K. Takahashi Bright electroluminescence from CdS quantum dot LED structures
Journal Volume Year Pages Concerned
Electronics Letters 34 1998 2435_2436

Author Title of Article
S. Nakamura, K. Kitamura, H. Umeya, A. Jia, M. Kobayashi, A. Yoshikawa, S. Shimotomai, Y. Kato and K. Takahashi Bright electroluminescence from CdS quantum Dot LED structures
Journal Volume Year Pages Concerned
Electro. Lett. 34 1998 2435_2435

Author Title of Article
M. Shimotomai and A. Yoshikawa Simultaneous phase separation and basal-plane atomic ordering in Inx<・SUB> Ga1-x<・SUB>N
Journal Volume Year Pages Concerned
Appl. Phys. Lett. 73 1998 3256_3258

Author Title of Article
K. Wakao, S. Nakamura, A. Jia, M. Kobayashi, A. Yoshikawa, M. Shimotomai, Y. Kato and K. Takahashi Citric Acid Etching of ZnSe Surface and Application to the Homoepitaxy by Molecular Beam Epitaxy
Journal Volume Year Pages Concerned
Jpn. J. Appl. Phys 37 1998 L749_L751

Author Title of Article
Z. Qin, M. Kobayashi, A. Yoshikawa and K. Takahashi X-Ray Diffraction Reciprocal Space and Pole Figure Characterization of Cubic GaN Epilayers Grown on (001) GaAs by Molecular Beam Epitaxy
Journal Volume Year Pages Concerned
Journal of Materials Science Materials in Electronics 10 1999 199_202

Author Title of Article
M. Kobayashi, S. Nakamura, K. Kitamura, H. Umeya, A. Jia, A. Yoshikawa, M. Shimotomai, Y. Kato, and K. Takahashi Luminescence properities of CdS quantum dots on ZnSe
Journal Volume Year Pages Concerned
J. Vac. Sci. Technol. B17 1999 2005_2008

Author Title of Article
M. Kobayashi, K. Wakao, S. Nakamura, Y. Sugure, A. W. Jia, A. Yoshikawa, M. Shimotomai, Y. Kato, and K. Takahashi Homoepitaxy of ZnSe on the citric acid etched (001) ZnSe Surface
Journal Volume Year Pages Concerned
J. Cryst. Growth 201/202 1999 474_476

Author Title of Article
H. Hayashi, A. Hayashida, A. W. Jia, M. Kobayashi, M. Shimotomai, Y. Kato, A. Yoshikawa, and, K. Takahashi Origin of the tilt of crystalline axis influenced by N-beam incidence direction in rf-MBE of cubic GaN epilayer on (001) GaAs
Journal Volume Year Pages Concerned
Phys. Stat. Sol. 216 1999 241_245

Author Title of Article
Y. Taniyasu, Y. Watanabe, D. H. Lim, A. W. Jia, M. Shimotomai, Y. Kato, M. Kobayashi, A. Yoshikawa, and K. Takahashi Structureal Defects of Cubic InGaN/GaN Heterostructure Grown on GaAs(001) Substrate by MOVPE
Journal Volume Year Pages Concerned
phys. stat. sol. (a) 176 1999 397_401

Author Title of Article
A. Jia, T. Furushima, M. Kobayashi, Y. Kato, M. Shimotomai, A. Yoshikawa and K. Takahashi Design of new UV/blue/green light emitters made of hexagonal-phase ZnMgCdOSSe mixed-crystal system fabricated on GaAs- and InP-(111) substrates
Journal Volume Year Pages Concerned
J. Crystal Growth 214/215 2000 1085_1090

Author Title of Article
K. Kitamura, H. Umeya, A. W. Jia, M. Kobayashi, A. Yoshikawa, M. Shimotomai, Y. Kato, and K. Takahashi Self-assembled CdS quantum dot structures grown on ZnSe and ZnSSe
Journal Volume Year Pages Concerned
J. Crystal Growth 214/215 2000 680_683

Author Title of Article
H. Umeya, K. Kitamura, A. W. Jia, M. Kobayashi, A. Yoshikawa, M. Shimotomai, Y. Kato, and K. Takahashi Growth of hexagonal ZnCdS on GaAs (111)B and (001) substrates by MBE
Journal Volume Year Pages Concerned
J. Crystal Growth 214/215 2000 192_196

Author Title of Article
M. Kobayashi, K. Kitamura, H. Umeya, A. W. Jia, A. Yoshikawa, M. Shimotomai, Y. Kato, and K. Takahashi Growth of CdS self-organized quantum doots by molecular beam epitaxy and application to light emmiting diode structures
Journal Volume Year Pages Concerned
J. Vac. Sci. Technol. B18 2000 1684_1687

Author Title of Article
M. Kobayashi, K. Kitamura, H. Umeya, A. Jia, A. Yoshikawa, Y. Kato, M. Shimotomai, and K. Takahashi CdS based novel light emitting device structures grown by MBE
Journal Volume Year Pages Concerned
phys. stat. sol. (a) 180 2000  

Author Title of Article
T. Kazama, F. Yasunaga, Y. Taniyasu, A. Jia, Y. Kato, M. Kobayashi, A. Yoshikawa and K. Takahashi Cross-Sectional Scanning Tunneling Microscopy Characterization of Cubic GaN Epilayers Grown on (001) GaAs
Journal Volume Year Pages Concerned
phys. stat. sol. (a) 180 2000 345_350

Author Title of Article
Y. Taniyasu, K. Suzuki, D. H. Lim, A. Jia, M. Shimotomai, Y. Kato, M. Kobayashi, A. Yoshikawa and K. Takahashi Cubic InGaN/GaN Double-Heterostructure Light Emitting Diodes Grown on GaAs (001) Substrates by MOVPE
Journal Volume Year Pages Concerned
phys. stat. sol. (a) 180 2000 241_246

Author Title of Article
Z. J. Yang, Y. Z. Tong, G. Y. Zhang, X. L. Du, N. Fujii, A. Jia, A. Yoshikawa Effect of pits in InGaN/GaN multi-quantum well on the strain and In composition segregation
Journal Volume Year Pages Concerned
phys. stat. sol. (a) 180 2000 81_84

Author Title of Article
B. L. Liu, D. H. Lim, M. Lachab, A. W. Jia, K. Takahashi, and A. Yoshikawa A new Approach to grow GaN by Low-Pressure MOCVD Using a Three Step Technique
Journal Volume Year Pages Concerned
Proc. Int. Workshop on Nitride Semiconductors, IPAP Conf. Series 1   2000 133_136

Author Title of Article
D. H. Lim, K. Suzuki, S. Arima, Y. Taniyasu, K. Xu, B. L. Liu, G. H. Yu, K. Takahashi, and A. Yoshikawa CAICISS Analysis for the Polarity Conversion of GaN Films Grown on Nireided Sappire Substrates
Journal Volume Year Pages Concerned
Proc. Int. Workshop on Nitride Semiconductors, IPAP Conf. Series 1   2000 150_153

Author Title of Article
X. L. Du, D. H. Lim, K. Xu, Y. Taniyasu, B. L. Liu, G. H. Yu, A. W. Jia, K. Takahashi, and A. Yoshikawa Direct Observation of Defect Structures in Ga-Polar and N-Polar GaN Epilayers by Cross-Sectional Cathodoluminescence
Journal Volume Year Pages Concerned
Proc. Int. Workshop on Nitride Semiconductors, IPAP Conf. Series 1   2000 502_505

Author Title of Article
R. Kimura and K. Takahashi High quality epitaxial growth of h-GaN on Al203(0001) and c-GaN on GaAs(100) by molecular beam epitaxy
Journal Volume Year Pages Concerned
phys. stat. sol. (a) 180 2000 235_239

Author Title of Article
R. Kimura, Y. Gotoh, T. Matsuzawa and K. Takahashi High purity cubic GaN grown on an AlGaAs buffer layer by molecular beam epitaxy
Journal Volume Year Pages Concerned
J. Cryst. Growth 209 2000 382_386

Author Title of Article
R. Kimura, K. Takahashi, A. Jia, M. Kobayashi and A. Yoshikawa Molecular beam epitaxial growth of GaN on (0001) Al203 using an ultrathin amorphous buffer layer deposited at low temperature
Journal Volume Year Pages Concerned
Jpn. J. Appl. Phys. 39 2000 1039_1043

Author Title of Article
R. Kimura, K. Takahashi and H. T. Grahn A study on the growth of cubic-GaN film using an AlGaAs buffer layer grown on GaAs(100) by plasma-assisted molecular beam epitaxy
Journal Volume Year Pages Concerned
Mat. Res. Symp. 639 2001 G3.46.1_G3.46.5

Author Title of Article
X. L. Du, D. H. Lim, K. Xu, B. L. Liu, A. W. Jia, K. Takahashi and A. Yoshikawa Cross-sectional Cathodoluminescence Study in Ga-polar and N-polar GaN Epilayers
Journal Volume Year Pages Concerned
Mat. Res. Soc. Symp. 639 2001 G6.16.1_G6.16.6

Author Title of Article
K. Xu, D. H. Lim, B. L. Liu, A. W. Jia, A. Yoshikawa Atomic force microscopy study of GaN grown on Al203 (0001) by LP-MOVPE
Journal Volume Year Pages Concerned
Mat. Res. Soc. Symp. 639 2001 G3.28.1_G3.28.5

Author Title of Article
H. Hayashi, A. Hayashida, A. Jia, K. Takahashi, A. Yoshikawa Experimental investigation of inclusion of hexagonal GaN phase domain by varying nitrogen-beam direction to a <111> axis in MBE growth of cubic GaN
Journal Volume Year Pages Concerned
Journal of crystal growth, (in press)   2001  

Author Title of Article
R. Kimura and K. Takahashi Investigation of initial growth stage of cubic-GaN using AlGaAs buffer layer on GaAs (100) by molecular beam epitaxy
Journal Volume Year Pages Concerned
J. Crystal Growth (in press)   2001  

Author Title of Article
K. Xu, N. Yano, A. W. Jia, K. Takahashi, A. Yoshikawa Polarity Control of GaN Grown on Sapphire Substrate by RF-MBE
Journal Volume Year Pages Concerned
J. Crystal Growth (to be published)   2001  

Author Title of Article
K. Xu, N. Yano, A. W. Jia, K. Takahashi, A. Yoshikawa In-situ Real-time Analysis on Strain Relaxation Process in GaN Growth on Sapphire by RF-MBE
Journal Volume Year Pages Concerned
J. Crystal Growth (to be published)   2001  

Author Title of Article
K. Xu, N. Yano, A. W. Jia, A. Yoshikawa, K. Takahashi Kinetic process in polarity selection of GaN grown by RF-MBE
Journal Volume Year Pages Concerned
to be published on Phys. Solid Status   2001  

Author Title of Article
D. H. Lim, K. Xu, S. Arima, A. Yoshikawa and K. Takahashi Polarity conversion of GaN films by the insertion of two monolayers of aluminum
Journal Volume Year Pages Concerned
Applied Physics Letters (in press)   2001  

Author Title of Article
R. Kimura and K. Takahashi A study on initial nucliation using an ultra thin amorphous buffer layer for the growth of GaN on Al2O3(0001) by molecular beam epitaxy
Journal Volume Year Pages Concerned
Jpn. J. Appl. Phys. 39 2000 402_406

Author Title of Article
D. M. Bagnall, Y. F. Chen, Z. Q. Zhu, T. Yao, S. Koyama, M. Y. Shen and T. Goto Optically pumped lasinh of ZnO at room temperature
Journal Volume Year Pages Concerned
Appl. Phys. Lett. 70 1997 2230_2232

Author Title of Article
M. W. Cho, K. W. Koh, K. Morikawa, K. Arai, H. D. Jung, Z. Q. Zhu, T. Yao and Y. Okada Surface treatment of ZnSe substrate and homoepitaxy of ZnSe
Journal Volume Year Pages Concerned
J. Electron. Mater. 26 1997 423_428

Author Title of Article
Z. Q. Zhu, E. Kurtz, K. Arai, Y. F. Chen, D. M. Bagnall, P. Tomashini, F. Lu, T. Sekiguchi, T. Yao, T. Yasuda and Y. Segawa Self-organized growth of II-VI wide bandgap quantum dot structures
Journal Volume Year Pages Concerned
Phys. Stat. Sol. (b) 202 1997 827_833

Author Title of Article
S. Q. Wang, F. Lu, H. D. Jung, C. D. Song, Z. Q. Zhu, H. Okushi, B. C. Cavenett and T. Yao Electronic states in ZnSe/ZnTe type-II superlattice studied by capacitance transient spectroscopy
Journal Volume Year Pages Concerned
J. Appl. Phys. 82 1997 3402_3407

Author Title of Article
Y. F. Chen, D. M. Bagnall, Z. Q. Zhu, T. Sekiguchi, K. T. Park, K. Hiraga, T. Yao, S. Koyama, M. Y. Shen and T Goto Growth of ZnO single crystal thin films on c - plane(0001)sapphire by plasma enhanced molecular beam epitaxy
Journal Volume Year Pages Concerned
J. Cryst. Growth 181 1997 165_169

Author Title of Article
Y. F. Chen, D. M. Bagnall, Z. Q. Zhu, T. Sekiguchi, K. T. Park, K. Hiraga and T. Yao Observation of zinc oxide quantum pyramids grown by plasma enhanced molecular beam epitaxy
Journal Volume Year Pages Concerned
Nonlinear Optics 18 1997 107_110

Author Title of Article
5. D. M. Bagnall, Y. F. Chen, Z. Q. Zhu, T. Yao, M. Y. Shen and T. Goto High temperature stimulated emission of ZnO grown by plasma assisited molecular beam epitaxy
Journal Volume Year Pages Concerned
Nonlinear Optics 18 1997 243_246

Author Title of Article
Y. F. Chen, Z. Q. Zhu, D. M. Bagnall, T. Sekiguchi and T. Yao ZnO quantum pyramids grown on c-plane sapphire by plasma-assisted molecular beam epitaxy
Journal Volume Year Pages Concerned
J. Cryst. Growth 184/185 1998 269_273

Author Title of Article
D. M. Bagnall, Y. F. Chen, M. Y. Shen, Z. Q. Zhu, T. Goto and T. Yao Room temperature excitonic stmuated emission from zinc oxide epilayers grown by plasma-assisted MBE
Journal Volume Year Pages Concerned
J. Cryst. Growth 184/185 1998 605_609

Author Title of Article
Y. F. Chen, D. M. Bagnall, H. J. Koh, K. T. Park, K. Hiraga, Z. Q. Zhu and T. Yao Plasma assisted molecular beam epitaxy of ZnO on c-plane sapphire: Growth and characterzation
Journal Volume Year Pages Concerned
J. Appl. Phys. 84 1998 3912_3918

Author Title of Article
H. J. Ko, Y. F. Chen, Z. Zhu, J. M. Ko, T. Fukuda and T. Yao Electron beam exposure and epitaxy of ZnO films on (111)CaF2
Journal Volume Year Pages Concerned
Proc. of the 2th Int. Symp. on Blue Laser and Light Emitting Diodes   1998 500_503

Author Title of Article
D. M. Bagnall, Y. F. Chen, H. J. Ko, Z. Q. Zhu, M. Y. Shen, T. Goto and T. Yao ZnO excitonic Lasers- the future of short wavelength emission?
Journal Volume Year Pages Concerned
Proc. of the 2th Int. Symp. on Blue Laser and Light Emitting Diodes   1998 536_539

Author Title of Article
D. M. Bagnall, Y. F. Chen, Z. Zhu and T. Yao High temperature excitonic stimulated emission from ZnO epitaxial layers
Journal Volume Year Pages Concerned
Appl. Phys. Lett. 73 1998 1038_1040

Author Title of Article
T. Yao, Y. F. Chen and D. M. Bagnall ZnO as a novel photonic material for the UV region
Journal Volume Year Pages Concerned
Proc. of the 2nd International Warkshop on Optoelectronics   1998 80_86

Author Title of Article
A. Yamamoto, T. Kido, T. Goto, Y. F. Chen, T. Yao and A. Kasuya Pump-probe measurement of ZnO epitaxial thin films
Journal Volume Year Pages Concerned
J. Korean Phys. Soc. 34 1999 58_60

Author Title of Article
M. W. Cho, J. H. Chang, D. M. Bagnall, K. W. Koh, S. Saeki, K. T. Park, Z. Zhu, K. Hiraga and T. Yao Growth and characterization of beryllium-based II-VI compounds
Journal Volume Year Pages Concerned
J. Appl. Phys. 85 1999 512_517

Author Title of Article
M. W. Cho, S. Saeki, S. K. Hong, J. H. Chang, N. Nakajima, T. Yao, T. H. Yoon and J. H. Lee Non-alloyed Au/p-ZnSe/p-BeTe ohmic contact layers for ZnSe-based blue-green laser diodes
Journal Volume Year Pages Concerned
Electr. Lett. 35 1999 1740_1742

Author Title of Article
A. Yamamoto, T. Kido, T. Goto, Y. F. Chen, T. Yao and A. Kasuya Dynamics of photoexcited carriers in ZnO epitaxial thin films
Journal Volume Year Pages Concerned
Appl. Phys. Lett. 75 1999 469_471

Author Title of Article
H. J. Ko, Y. F. Chen, J. M. Ko, T. Hanada, Z. Zhu, T. Fukuda and T. Yao Two-step MBE growth of ZnO layers on electron beam exposed(111)CaF2
Journal Volume Year Pages Concerned
J. Cryst. Growth 207 1999 87_94

Author Title of Article
D. M. Bagnall, Y. F. Chen, Z. Q. Zhu, T. Yao, M. Y. Shen and T. Goto Plasma assisted molecular beam epitaxy of ZnO for optoelectronic applications
Journal Volume Year Pages Concerned
Recent Res. Devel. Crystal Growth Res.   1999 1257_1273

Author Title of Article
Y. F. Chen, S. K. Hong, H. J. Ko, M. Nakajima, T. Yao and T. Segawa Plasma-assisted molecular-beam epitaxy of ZnO epilayers on atomically flat MgA1204(111) substrates
Journal Volume Year Pages Concerned
Appl. Phys. Lett. 76 2000 245_247

Author Title of Article
Y. F. Chen, H. J. Ko, S. K. Hong and T. Yao Layer-by-layer growth of ZnO epilayer on Al2O3(0001)by using a MgO buffer layer
Journal Volume Year Pages Concerned
Appl. Phys. Lett. 76 2000 559_561

Author Title of Article
H. J. Ko, Y. F. Chen, Z, Zhu, T. Hanada and T. Yao Effects of a low-temperature buffer layer on structural properties of ZnO epilayers grown on(111)CaF2 by two-step MBE
Journal Volume Year Pages Concerned
J. Cryst. Growth 208 2000 389_394

Author Title of Article
S. K. Hong, H. J. Ko, Y. F. Chen and T. Yao Defect characterization in epitaxial ZnO/epi-GaN/Al2O3 hetero-structures: transmission electron microscopy and triple-axis X-ray diffractometry
Journal Volume Year Pages Concerned
J. Cryst. Growth 209 2000 537_541

Author Title of Article
S. K. Hong, H. J. Ko, Y. F. Chen and T. Yao Defect characterization in epitaxial ZnO/epi-GaN/A1203 heterostructures: transmission electron microscopy and triple-axis X-ray diffractometry
Journal Volume Year Pages Concerned
J. Cryst. Growth 209 2000 537_541

Author Title of Article
H. J. Ko, Y. F. Chen, S. K. Hong and T. Yao MBE growth of high-quality ZnO Films on epi-GaN
Journal Volume Year Pages Concerned
J. Cryst. Growth 209 2000 816_821

Author Title of Article
H. J. Ko, Y. F. Chen, Z. Q. Zhu, T. Yao, I. Kobayashi and H. Uchiki Photoluminescence properties of ZnO epilayers grown on CaF2(111)by plasma assisted molecular beam epitaxy
Journal Volume Year Pages Concerned
Appl. Phys. Lett. 76 2000 1905_1907

Author Title of Article
S. K. Hong, H. J. Ko, Y. F. Chen, T. Hanada and T. Yao Evolution of initial layers of plasma-assisted MBE grown ZnO in (0001)GaN/sapphire
Journal Volume Year Pages Concerned
J. Cryst. Growth 214/215 2000 81_86

Author Title of Article
Y. F. Chen, H. J. Ko, S. K. Hong, T. Yao and Y. Segawa Two dimensional growth of ZnO films on sapphire (0001) with buffer layers
Journal Volume Year Pages Concerned
J. Cryst. Growth 214/215 2000 87_91

Author Title of Article
A. Yamamoto, T. Kido, T. Goto, Y. F. Chen, T. Yao and A. Kasuya Time-resolved photoluminescence in ZnO epitaxial thin films studied by up-conversion method
Journal Volume Year Pages Concerned
J. Cryst. Growth 214/215 2000 308_311

Author Title of Article
S. K. Hong, T. Yao, B. J. Kim, S. Y. Yoon and T. I. Kim Origin of hexagonal-shaped etch pits formed in (0001) GaN films
Journal Volume Year Pages Concerned
Appl. Phys. Lett. 77 2000 82_84

Author Title of Article
Y. F. Chen, D. M. Bagnall and T. Yao ZnO as a novel photonic material for the UV region
Journal Volume Year Pages Concerned
Mater. Sci. Eng. B75 2000 190_198

Author Title of Article
H. J. Ko, Y. F. Chen, T. Yao, M. Miyajima, A. Yamamoto and T. Goto Biexciton emission from high-quality ZnO films grown on epitaxial GaN by plasma-assisted molecular-beam epitaxy
Journal Volume Year Pages Concerned
Appl. Phys. Lett. 77 (4)(2000) 537 - 539 77 2000 537_539

Author Title of Article
S. K. Hong, H. J. Ko, Y. F. Chen, T. Hanada and T. Yao Control and characterization of ZnO/GaN heterointerfaces in plasma-assisted MBE-grown ZnO films on GaN/A12O3
Journal Volume Year Pages Concerned
Appl. Surf. Sci. 159/160 2000 441_448

Author Title of Article
Y. F. Chen, S. K. Hong, H. J. Ko, M. Nakajima, T. Yao and T. Segawa Plasma-assisted molecular-beam epitaxy of ZnO epilayers on atomically flat MgA12O4(111) substrates
Journal Volume Year Pages Concerned
Appl. Phys. Lett 76 2000 245_247

Author Title of Article
S. K. Hong, H. J. Ko, Y. F. Chen, T. Hanada and T. Yao ZnO/GaN heterointerfaces and ZnO films grown by plasma-assisted molecular beam epitaxy on (0001) GaN/A12O3
Journal Volume Year Pages Concerned
J. Vac. Sci. Technol. B18 2000 2313_2321

Author Title of Article
S. K. Hong, T. Hanada, H. J. Ko, Y. F. Chen, T. Yao, D. Imai, K. Araki and M. Shinohara Control of polarity of ZnO films grown by plasma-assisted molecular-beam epitaxy: Zn-and O-polar ZnO films on Ga-polar GaN templated
Journal Volume Year Pages Concerned
Appl. Phys. Lett. 77 2000 3571_3573

Author Title of Article
Y. F. Chen, H. J. Ko, S. K. Hong, T. Sekiguchi, T. Yao and Y. Segawa Plasma-assisted molecular beam epitaxy for ZnO based II-VI semiconductor oxides and their heterostructures
Journal Volume Year Pages Concerned
J. Vac. Sci. Technol. B18 2000 1514_1517

Author Title of Article
H. J. Ko, Y. F. Chen, S. K. Hong, H. Wenisch, T. Yao and D. C. Look Ga-doped ZnO films grown on GaN templates by plasma-assisted molecular-beam epitaxy
Journal Volume Year Pages Concerned
Appl. Phys. Lett. 77 2000 3761_3763

Author Title of Article
A. Takeuchi, Y. Kumagai, H. Tsuchiya, M. Kawabe, M. Kurihara and F. Hasegawa Initial Stage of Cubic GaN Film Growth on (001) GaAs by MOMBE using MMHyand TEG
Journal Volume Year Pages Concerned
Institute of Physics Conference Series 142 1996 843_846

Author Title of Article
M. Akamatsu, H. Tsuchiya, M. Ishida and F. Hasegawa Atomic Layer Epitaxy of GaN using GaC13 and NH3 its Analysis by Surface Photo-Absorption Method
Journal Volume Year Pages Concerned
Proceeding of International Symposium on Blue Laser and Light Emitting Diodes   1996 98_101

Author Title of Article
H. Tsuchiya, M. Akamatsu, M. Ishida and F. Hasegawa Layer by Layer Growth of GaN on GaAs Substrate using GaCl3 and NH3
Journal Volume Year Pages Concerned
Jpn. J. Appl. Phys. 35 1996 L748_L750

Author Title of Article
H. Tsuchiya, A. Takeuchi, A. Matsuo and F. Hasegawa Dependence of the HVPE GaN Epilayer on GaN Buffer layer for GaN Direct Growth on (001) GaAs Substrate
Journal Volume Year Pages Concerned
Solid State Electronics 41 1997 333_338

Author Title of Article
H. Tsuchiya, K. Sunaba, S. Yonemura, T. Suemasu and F. Hasegawa Cubic Dominant GaN Growth on (001) GaAs Substrates by Hydride Vapor Phase Epitaxy
Journal Volume Year Pages Concerned
Jpn. J. Appl. Phys. 36 1997 L1_L3

Author Title of Article
A. Takeuchi, H. Tsuchiya, M. Kurihara and F. Hasegawa Azimuth Dependence of The Crystal Quality of GaN Grown on (100) GaAs by MOMBE and Its Improvement by Annealing
Journal Volume Year Pages Concerned
Institute of Physics Conference Series Proceeding of 23rd Int. Symp. on Compound Semiconductors 155 1997 183_186

Author Title of Article
H. Tsuchiya, K. Sunaba, M. Minami, T. Suemasu and F. Hasegawa Influence of As Autodoping from GaAs Substrates on Thick Cubic GaN Growth by Halide Vapor Phase Epitaxy
Journal Volume Year Pages Concerned
Japanese Journal of Applied Physics 37 1998 L568_L570

Author Title of Article
S. Yonemura, T. Yaguchi, H. Tsuchiya, N. Shimoyama, T. Suemasu and F. Hasegawa Comparison between Monomethyl-hydrazine and ECR Plasma Activated Nitrogen as a Nitrogen Source for CBE Growth of GaN
Journal Volume Year Pages Concerned
J. Crystal Growth 188 1998 81_85

Author Title of Article
S. Yonemura, T. Yaguchi, H. Tsuchiya, N. Shimoyama, T. Suemasu and F. Hasegawa Comparison between Monomethyl-hydrazine and ECR Plasma Activated Nitrogen as a Nitrogen Source for CBE Growth of GaN
Journal Volume Year Pages Concerned
J. Crystal Growth 188 1998 81_85

Author Title of Article
7. F. Hasegawa, M. Minami, K. Sunaba and T. Suemasu Thick GaN growth on GaAs (111) substrates at 1000oC with HVPE
Journal Volume Year Pages Concerned
Phys. Stat. Sol. (a) 178 1999 421_424

Author Title of Article
F. Hasegawa, M. Minami, K. Sunaba and T. Suemasu Thick GaN growth on GaAs (111) substrates at 1000℃ with HVPE
Journal Volume Year Pages Concerned
Phys. Stat. Sol. (a) 178 1999 421_424

Author Title of Article
T. Suemasu, M. Sakai and F. Hasegawa Optimum thermal-cleaning condition of GaAs surface with a superior arsenic source: Trisdimethylamino-arsine
Journal Volume Year Pages Concerned
J. Cryst. Growth 209 2000 267_271

Author Title of Article
M. Sasaki, S. Yonemura, T. Nakayama, N. Shimoyama, T. Suemasu and F. Hasegawa CBE Growth of GaN on GaAs(001) and (111)B Substrates UsingMonomethylhydrazine
Journal Volume Year Pages Concerned
J. Cryst. Growth 209 2000 373_377

Author Title of Article
F. Hasegawa, M. Minami, K. Sunaba and T. Suemasu One possibility of obtaining bulk GaN: halide VPE growth at 1000oC on GaAs (111) substrates
Journal Volume Year Pages Concerned
IEICE Trans. Electron. E83-C 2000 633_638

Author Title of Article
M. Sasaki, T. Nakayama, N. Shimoyama, T. Suemasu and F. Hasegawa Superiority of an AIN Intermediate Layer for Heteroepitaxy of Hexagonal GaN
Journal Volume Year Pages Concerned
Jpn. J. Appl. Phys. 39 2000 4869_4874

Author Title of Article
T. Nakayama, M. Namerikawa, O. Takahashi, T. Suemasu and F. Hasegawa HVPE/MOMBE Hybrid Growth of High Quality Hexagonal GaN on SiO2 Substrates with an AIN Buffer Layer
Journal Volume Year Pages Concerned
Proceedings of Int. Workshop on Nitride Semiconductors, 2000 Nagoya, Japan. IPAP Conference Series 1   2000 7_10

Author Title of Article
O. Takahashi, M. Namerikawa, H. Tanaka, R. Souda, T. Suemasu and F. Hasegawa Polarity of Hexagonal GaN Grown on GaAs (111)A and (111)B Substrates by HVPE and MOVPE
Journal Volume Year Pages Concerned
Proc. of MRS 2000 Fall Meetings (in press)   2001  

Author Title of Article
Y. Luo, R. Pu, C. Sun, J. Peng, T. Hirata, T. Eguchi, Y. Nakano and K. Tada A Novel Monolithically Integrated Device Composed of MQW GaAlAs/GaAs Gain-Coupled DFB Laser and Electroabsorption Modulator
Journal Volume Year Pages Concerned
Chinese J. Semiconductors 17 1996 347_352

Author Title of Article
M. Kato, K. Tada and Y. Nakano Wide-Wavelength Polarization-Independent Optical Modulator Based on Tensile-Strained Quantum Well with Mass-Dependent Width
Journal Volume Year Pages Concerned
IIEEE Photon. Tech. Lett. 8 1996 785_787

Author Title of Article
H. Feng, J. Pang, K. Tada and Y. Nakano Large Field-Induced Refractive Index Change without Red Shift of Absorption Edge in Five-Step Asymmetric Coupled Quantum Wells with Modified Potential
Journal Volume Year Pages Concerned
IEEE Photon. Tech. Lett. 9 1997 639_641

Author Title of Article
M. Sugiyama, K. Kusunoki, Y. Shimogaki, S. Sudo, Y. Nakano, H. Nagamoto, K. Sugawara, K. Tada, and H. Komiyama Kinetic studies on thermal decomposition of MOVPE sources using Fourier transform infrared spectroscopy
Journal Volume Year Pages Concerned
Applied Surface Science 117/118 1997 746_752

Author Title of Article
T. K. Sudoh, M. Kumano, Y. Nakano, and K. Tada Wavelength trimming by photo-absoprtion induced disordering for multiple-wavelength distributed-feedback laser arrays
Journal Volume Year Pages Concerned
IEEE Photonics Technology Letters 9 1997 887_891

Author Title of Article
N. Chen, Y. Nakano, K. Okamoto, and K. Tada Geert Morthier, and Roel Baets, "Analysis, fabrication, and characterization of tunable DFB lasers with chirped gratings
Journal Volume Year Pages Concerned
IEEE Journal of Selected Topics in Quantum Electronics 3 1997 541_546

Author Title of Article
M. Bouda, Y. Nakano and K. Tada Wide-Angle Coupling to Multi-Mode Interference Devices -A Novel Concept for Compacting Photonic Integrated Circuits-
Journal Volume Year Pages Concerned
Trans. Inst. Electron. Inform. Commun. Engrs. E80-C 1997 640_645

Author Title of Article
H. Feng, M. Sugiyama, J. Pang, K. Tada and Y. Nakano Strong Exciton Absorption Peak Enhancement without Redshift of Absorption Edge in Al0.3Ga0.7As/GaAs Five-Step Asymmetric Coupled Quantum Well with Modified Potential
Journal Volume Year Pages Concerned
Jpn. J. Appl. Phys. 36 1997 L855_L856

Author Title of Article
H. Feng, E. H. Li and K. Tada Analysis of X-Intersecting Waveguide Switches with a Large Branching Angles Ranging from 2° to 12°
Journal Volume Year Pages Concerned
Jpn. J. Appl. Phys. 36 1997 5136_5142

Author Title of Article
K. Nishioka, M. Sugiyama, M. Nezuka, Y. Shimogaki, Y. Nakano, K. Tada, and H. Komiyama Optimization of electron cyclotron resonance reactive ion beam etching reactors for dry etching of GaAs with C12
Journal Volume Year Pages Concerned
Journal of Electrochemical Society 144 1997 3191_3197

Author Title of Article
Hao Feng, Kunio Tada and Yoshiaki Nakano Polarization-independent large field-induced retractive index change in a strained five-step GaAs asymmetric coupled quantum well
Journal Volume Year Pages Concerned
Appl. Phys. Lett. 71 1997 2674_2675

Author Title of Article
H. Feng, J. P. Pang, M. Sugiyama, K. Tada and Y. Nakano Field-Induced Optical Effect in a Five-Step Asymmetric Coupled Quantum Well with Modified Potential
Journal Volume Year Pages Concerned
IEEE J. Quantum Electron. 34 1998 1197_1208

Author Title of Article
Taro Arakawa, Kunio Tada, Naoki Kurosawa, Joo-Hyong Noh Anomalous Sharp Dip of Large Field-Induced Refractive Index Change in GaAs/AlGaAs Five- Layer Asymmetric Coupled Quantum Well
Journal Volume Year Pages Concerned
Jpn. J. Appl. Phys. 39 2000 6329_6333

Author Title of Article
Kunio Tada, Taro Arakawa, Kensuke Kazuma, Naoki Kurosawa, and Joo-Hyong Noh Influence of One Monolayer Thickness Variation in GaAs/AlGaAs Five-Layer Asymmetric Coupled Quantum Well upon Electrorefractive Index Change
Journal Volume Year Pages Concerned
Jpn. J. Appl. Phys. 40 2001 656_661

Author Title of Article
T. Honda, T. Sakaguchi, F. Koyama, K. Iga, K. Inoue, H. Munekata and H. Kukimoto Design and Fabrication of ZnSe-based Blue/Green Surface Emitting Lasers
Journal Volume Year Pages Concerned
J. Cryst. Growth 159 1996 595_599

Author Title of Article
T. Honda, F. Koyama, and K. Iga Design consideration of GaN-Based surface emitting lasers
Journal Volume Year Pages Concerned
Mat. Res. Soc. Symp. Proc. 449 1997 1151_1159

Author Title of Article
T. Shirasawa, T. Honda, F. Koyama, and K. Iga ZnO buffer layer formed on Si and Sapphire substrate for GaN MOVPE
Journal Volume Year Pages Concerned
Mat. Res. Soc. Symp. Proc. 449 1997 373_377

Author Title of Article
K. Saotome, A. Matsutani, T. Shirasawa, M. Mori, T. Honda, T. Sakaguchi, F. Koyama, and K. Iga Reactive ion beam etching of GaN grown by MOVPE
Journal Volume Year Pages Concerned
Mat. Res. Soc. Symp. Proc. 449 1997 1029_1033

Author Title of Article
T. Shirasawa, N. Mochida, A. Inoue, T. Honda, T. Sakaguchi, F. Koyama and K. Iga Interface Control of GaN/AlGaN Quantum Well Structures in MOVPE Growth
Journal Volume Year Pages Concerned
J. Crystal Growth 180/190 1998 124_127

Author Title of Article
T. Honda, T. Miyamoto, T. Sakaguchi, H. Kawanishi, F. Koyama, and K. Iga Effect of piezo electric field on emission characteristics GaN/AlGaN quantum wells
Journal Volume Year Pages Concerned
J. Crystal Growth 180/190 1998 644_648

Author Title of Article
N. Mochida, T. Honda, T. Shirasawa, A. Inoue, T. Sakaguchi, F. Koyama and K. Iga Crystal orientation dependence of p-type contact resistance of GaN
Journal Volume Year Pages Concerned
J. Crystal Growth 180/190 1998 716_719

Author Title of Article
Y. Moriguchi, T. Miyamoto, T. Sakaguchi, M. Iwata, Y. Uchida, F. Koyama and K. Iga GaN polycrystal Growth on Silica Substrate by Metalorganic Vapor Phase Epitaxy (MOVPE)
Journal Volume Year Pages Concerned
3rd International Symposium on Blue Laser and Light Emitting Diodes, Berlin WeP19 2000  

Author Title of Article
T. Honda, H. Kawanishi, T. Sakaguchi, F. Koyama and K. Iga Characteristic Temperature Estimation for GaN-Based Lasers
Journal Volume Year Pages Concerned
MRS Internet J. Nitride Semicond. Res. 4S1 1999 G6.2

Author Title of Article
T. Miyamoto, T. Kageyama, S. Makino, D. Schlenker, F. Koyama and K. Iga CBE and MOCVD growth of GaInNAs
Journal Volume Year Pages Concerned
J. Crystal Growth 209 2000 339_344

Author Title of Article
T. Kageyama, T. Miyamoto, S. Makino, F. Koyama and K. Iga Optical quality of GaNAs and GaInNAs and its dependence on RF cell condition in chemical beam epitaxy
Journal Volume Year Pages Concerned
J. Crystal Growth 209 2000 350_354

Author Title of Article
K. Iga Surface emitting laser-its birth and generation of new optoelectronics field
Journal Volume Year Pages Concerned
IEEE J. Select. Top. Quantum Electron. 6 2000 1201_1205

Author Title of Article
Y. Kawakami, T. Onishi, S. Yamaguchi, H. Kurusu, Sz. Fujita and Sg. Fujita Time-resolved Luminescence Spectroscopy of Recombination Dynamics in a ZnSSe Doping Superlattice
Journal Volume Year Pages Concerned
J. Crystal Growth 159 1996 429_433

Author Title of Article
Y. Kawakami, M. Funato, Sz. Fujita, Sg. Fujita, Y. Yamada, T. Mishina and Y. Masumoto Effects of High Excitation on Localized Excitons in Cubic ZnCdS Lattice Matched to GaAs
Journal Volume Year Pages Concerned
J. Crystal Growth 159 1996 830_834

Author Title of Article
Y. Yamada, T. Mishina and Y. Masumoto, Y. Kawakami, J. Suda, Sz. Fujita and Sg. Fujita Dynamics of Dense Excitonic Systems in ZnSe-based Single Quantum Wells
Journal Volume Year Pages Concerned
J. Crystal Growth 159 1996 814_817

Author Title of Article
S. Yamaguchi, Y. Kawakami, Sz. Fujita and Sg. Fujita Recombination Dynamics of Localized Excitons in a CdSe/ZnSe/ZnS_{x}Se_{1-x} Single-Quantum-well Structure
Journal Volume Year Pages Concerned
Physical Review B B15 1996 2629_2634

Author Title of Article
Hyun-Chul Ko, Doo-Cheol Park, YcKawakami, Sz. Fujita, and Sg. Fujita Fabrication and optical properties of ZnCdSe/ZnSe Single Quantum Well on GaAs(110) Surface Cleaved in UHV by Molecular Beam Epitaxy
Journal Volume Year Pages Concerned
Semicond. Sci. & Tech. 11 1996 1873_1877

Author Title of Article
J. Tang, Y. Kawakami, Sz. Fujita and Sg. Fujita Photocurrent Spectrum of p-i-n Znl-xCdxSe/ZnSe Multiple Quantum Well Heterostructures
Journal Volume Year Pages Concerned
Electro-Optic and Second Harmonic Generation Materials, Devices, and Applications 2897 1996 95_103

Author Title of Article
J. Tang, Y. Kawakami, Sz. Fujita and Sg. Fujita Znl-xCdxSe/ZnSe Multiple Quantum Well Photomodulators
Journal Volume Year Pages Concerned
Electro-Optic and Second Harmonic Generation Materials, Devices, and Applications 2897 1996 389_395

Author Title of Article
Hyun-Chul Ko, S. Yamaguchi, H. Kurusu, Y. Kawakami, Sz. Fujita, and Sg. Fujita Reflection High energy Electron Diffraction Intensity Oscillations during the Growth of ZnSe on Cleaved GaAs(110) Surface by Molecular Beam Epitaxy
Journal Volume Year Pages Concerned
Jpn. J. Appl. Phys. 35 1996 L366_L368

Author Title of Article
Y. Kawakami, Z. Peng, Y. Narukawa, Sz. Fujita, Sg. Fujita and Shuji Nakamura Recombination dynamics of excitons and biexcitons in a hexagonal GaN epitaxial layer
Journal Volume Year Pages Concerned
Applied Physics Letters 69 1996 1414_1416

Author Title of Article
H. -C. Ko, D. -C. Park, Y. Kawakami, Sz. Fujita and Sg. Fujita Self-Aligning Phenomena of ZnCdSe Islands Grown by Molecular Beam Epitaxy on GaAs (110) Surface Cleaved in Ultra High Vacuum
Journal Volume Year Pages Concerned
Applied Surface Science 117/118 1997 484_488

Author Title of Article
H. -C. Ko, D. -C. Park, Y. Kawakami, Sz. Fujita and Sg. Fujita Optimization of ZnSe Growth on the Cleavage-Induced GaAs (110) Surface by Molecular-Beam Epitaxy
Journal Volume Year Pages Concerned
Journal of Crystal Growth - The Special Issue for the 2nd ICNS'97 - (to be published) 178 1997 246_251

Author Title of Article
H. -C. Ko, D. -C. Park, Y. Kawakami, Sz. Fujita and Sg. Fujita Microscopic Photoluminescence Spectroscopy of Self-Organized CdSe-ZnSe Quantum Dots Grown on the GaAs (110) Cleaved Surface
Journal Volume Year Pages Concerned
IEEE Joumal of Selected Topics in Quantum Electronics 3 1997 831_835

Author Title of Article
H. -C. Ko and Sg. Fujita Cleaved Edge Overgrowth of ZnSe on GaAs (110) by Molecular Beam Epitaxy
Journal Volume Year Pages Concerned
Journal of Korean Physical Society 30 1997 62_64

Author Title of Article
Y. Narukawa, Y. Kawakami, Sz. Fujita, Sg. Fujita and S. Nakamura Recombination dynamics of localized excitons in In0.20Ga0.80N- In0.05Ga0.95N multiple quantum wells
Journal Volume Year Pages Concerned
Phys. Rev. B 55 1997 R1938_R1941

Author Title of Article
Y. Kawakami, Y. Narukawa, Sz. Fujita, Sg. Fujita and S. Nakamura Excitonic Properties in InGaN/GaN MQW Structures
Journal Volume Year Pages Concerned
Nonlinear Optics 18 1997 277_284

Author Title of Article
Y. Kawakami, Y. Narukawa, Sz. Fujita, Sg. Fujita and S. Nakamura Excitonic Properties in InGaN/GaN MQW Structures
Journal Volume Year Pages Concerned
Nonlinear Optics 18 1997 277_284

Author Title of Article
Y. Narukawa, Y. Kawakami, M. Funato, Sz. Fujita, Sg. Fujita and S. Nakamura Role of self-formed InGaN quantum dots for exciton localization in the purple laser diode Emitting at 420 nm
Journal Volume Year Pages Concerned
Appl. Phys. Lett. 70 1997 981_983

Author Title of Article
S. Tanaka, H. Hirayama, Y. Aoyagi, Y. Narukawa, Y. Kawakami, Sz. Fujita and Sg. Fujita Stimulated Emission from Optically Pumped GaN Quantum Dots
Journal Volume Year Pages Concerned
Applied Physics Letters 71 1997 1299_1301

Author Title of Article
Y. Narukawa, S. Saijou, Y. Kawakami, Sz. Fujita, Sg. Fujita and S. Nakamura Time-Resolved Electroluminescence Spectroscopy of InGaN Single Quantum Well LEDs
Journal Volume Year Pages Concerned
J. Crystal Growth 189/190 1998 593_596

Author Title of Article
Y. Narukawa, K. Sawada, K. Omae, Y. Kawakami, Sz. Fujita, Sg. Fujita and S. Nakamura Emission Mechanism of Localized Excitons in InGaN Single Quantum Wells
Journal Volume Year Pages Concerned
J. Crystal Growth 189/190 1998 606_610

Author Title of Article
T. Onishi, H. Adachi, I. Kidoguchi, M. Mannoh, A. Takamori, Y. Narukawa, Y. Kawakami and Sg. Fujita Doping level and type of GaInP saturable absorbing layers for realizing pulsating 650-nm-band AlGaInP laser diodes
Journal Volume Year Pages Concerned
IEEE Photonics Technology Letters 10 1998 1368_1370

Author Title of Article
I. S. Hauksson, Y. Kawakami, Sz. Fujita, Sg. Fujita, I. Galbraith, K. A. Prior and B. C. Cavenett Biexciton emission from thick ZnSe epilayer grown by molecular beam epitaxy
Journal Volume Year Pages Concerned
J. Appl. Phys. 83 1998 2035_2040

Author Title of Article
H. C. Ko, D. C. Park, Y. Kawakami, Sz. Fujita and Sg. Fujita Localized excitonic emissions of ZnCdSe/ZnSe quantum wells grown on a GaAs(110) cleaved surface
Journal Volume Year Pages Concerned
Appl. Phys. Lett. 73 1998 1388_1390

Author Title of Article
D. C. Park, H. C. Ko, Sz. Fujita and Sg. Fujita Growth of GaN on indium tin oxide/glass substrates by RF plasma-enhanced chemical vapor deposition method
Journal Volume Year Pages Concerned
Japanese Journal of Applied Physics 37 1998 L294_L296

Author Title of Article
J. Suda, M. Ogawa, K. Sakurai, Y. Kawakami, Sz. Fujita and Sg. Fujita Optical properties of light-hole excitons in ZnSSe/ZnMgSSe tensile-strained quantum wells
Journal Volume Year Pages Concerned
J. Crystal Growth 184/185 1998 863_866

Author Title of Article
H. C. Ko, Y. Kawakami, Sz. Fujita and Sg. Fujita New approach to the fabrication of CdSe/ZnSe quantum dots using a cleaved-edge overgrowth technique
Journal Volume Year Pages Concerned
J. Crystal Growth 184/185 1998 283_287

Author Title of Article
M. Funato, Sz. Fujita and Sg. Fujita A comparative study on deep levels in p-ZnSe grown by MBE, MOMBE and MOVPE
Journal Volume Year Pages Concerned
J. Crystal Growth 184/185 1998 495_499

Author Title of Article
Y. Kawakami, Y. Narukawa, K. Sawada, S. Saijyo, Sz. Fujita, Sg. Fujita and S. Nakamura Recombination dynamics of localized excitons in self-formed InGaN quantum dots
Journal Volume Year Pages Concerned
Materials Science and Engineering B50 1998 256_263

Author Title of Article
H. C. Ko, Y. Kawakami, Sz. Fujita and Sg. Fujita Atomic force microscopy study of self-organized ZnCdSe nanostructures fabricated on the cleavage-induced GaAs(110) surface
Journal Volume Year Pages Concerned
Applied Surface Science 130/132 1998 719_723

Author Title of Article
S. Yamaguchi, H. Kurusu, Y. Kawakami, Sz. Fujita and Sg. Fujita Role of localized excitons in the stimulated emission in ultra-thin CdSe/ZnSe/ZnSSe single quantum-well structures
Journal Volume Year Pages Concerned
Superlattices and Microstructures 23 1998 1189_1195

Author Title of Article
Y. Narukawa, S. Saijou, Y. Kawakami, Sg. Fujita and S. Nakamura Radiative and nonradiative recombination processes in ultraviolet light-emitting diode composed of an In0.02Ga0.98N active layer
Journal Volume Year Pages Concerned
Applied Physics Letters 74 1999 558_560

Author Title of Article
Y. Narukawa, Y. Kawakami, Sg. Fujita and S. Nakamura Dimensionality of excitons in lesar-diode structures composed of InxGal-xN multiple quantum wells
Journal Volume Year Pages Concerned
Physical Review B 59 1999 10283_10288

Author Title of Article
Y. Narukawa, Y. Kawakami, Sg. Fujita and S. Nakamura Recombination dynamics in InxGal-xN multiple-quantum-well based laser diodes under high photoexcitation
Journal Volume Year Pages Concerned
Phys. Stat. Sol. (a) 176 1999 39_43

Author Title of Article
M. Fudeta, H. Asahi, K. Asami, Y. Narukawa, Y. Kawakami, J. -H. Noh, J. Mori, D. Watanabe, Sg. Fujita and S. -I. Gonda Time-resolved photoluminescence study of strain-induced quantum dots self-formed in GaP/InP short-period superlattice
Journal Volume Year Pages Concerned
Japanese Journal of Applied Physics 38 1999 L1006_L1008

Author Title of Article
Y. Kawakami, Y. Narukawa, K. Omae, Sg. Fujita and S. Nakamura Dimensionality of excitons in InGaN-based light emitting devices
Journal Volume Year Pages Concerned
physica state solid (a), 178 2000 331_336

Author Title of Article
S. Yamaguchi, H. Kurusu, Y. Kawakami, Sh. Fujita and Sg. Fujita Effect of degree of localization and confinement dimensionality of exitons on their recombination process in CdSe/ZnSe/ZnSxSel-x single quantum well structures
Journal Volume Year Pages Concerned
Physical Review B, 61 2000 10303_10313

Author Title of Article
T. Izumi, Y. Narukawa, K. Okamoto, Y. Kawakami, Sg. Fujita and S. Nakamura Time-resolved photoluminescence spectroscopy in GaN-based semiconductors with micron spatial resolution
Journal Volume Year Pages Concerned
J. Luminescence 87/89 2000 1196_1198

Author Title of Article
K. Okamoto, H. -C. Ko, Y. Kawakami and Sg. Fujita Time-space resolved photoluminescence from (Zn, Cd)Se-based quantum structures
Journal Volume Year Pages Concerned
J. Cryst. Growth 214/215 2000 639_645

Author Title of Article
Y. Kawakami, Y. Narukawa, K. Omae, Sg. Fujita and S. Nakamura Dynamics of optical gain in InxGal-xN multi-quantum-well-based laser diodes
Journal Volume Year Pages Concerned
App. Phys. Lett. 77 2000 2151_2153

Author Title of Article
A. Kaneta, T. Izumi, K. Okamoto, Y. Kawakami, Sg. Fujita, Y. Narita, T. Inoue and T. Mukai Spatial Inhomogeneity of Photoluminescence in an InGaN-Based Light-Emitting Diode Structure Probed by Near-Field optical Microscopy Under Illumination-Collection Mode
Journal Volume Year Pages Concerned
Jpn. J. App. Phys. 40 2001 110_111

Author Title of Article
Y. Kawakami, K. Omae, A. Kaneta, K. Okamoto, T. Izumi, S. Sajou, K. Inoue, Y. Narukawa, T. Mukai and Sg. Fujita Radiative and Nonradiative Recombination Processes in GaN-Based Semiconductors
Journal Volume Year Pages Concerned
physica status solidi (a), 183 2001 41_50

Author Title of Article
Y. Kawakami, K. Omae, A. Kaneta, K. Okamoto, T. Izumi, S. Sajou, K. Inoue, Y. Narukawa, T. Mukai and Sg. Fujita Radiative and Nonradiative Recombination Processes in GaN-Based Semiconductors
Journal Volume Year Pages Concerned
Physica Status Solidi (a) 183 2001 41_50

Author Title of Article
T. Honda, M. Tsubamoto, Y. Kuga and H. Kawanishi Optical Gain in BGaN Lattice-Matched to (0001) 6H-SiC
Journal Volume Year Pages Concerned
Mat. Res. Soc. Symroc. 482 1998 1125_1129

Author Title of Article
T. Shirasawa, N. Mochida, A. Inoue, T. Honda, T. Sakaguchi, F. Koyama and K. Iga Interface Control of GaN/AlGaN Quantum Well Structures in MOVPE Growth
Journal Volume Year Pages Concerned
J. Crystal Growth 189/190 1998 124_127

Author Title of Article
N. Mochida, T. Honda, T. Shirasawa, A. Inoue, T. Sakaguchi, F. Koyama and K. Iga Crystal Orientation Dependence of P-Type Contact Resistance of GaN
Journal Volume Year Pages Concerned
J. Crystal Growth 189/190 1998 716_719

Author Title of Article
T. Honda, T. Miyamoto, T. Sakaguchi, H. Kawanishi, F. Koyama, and K. Iga Effect of piezo electric field on emission characteristics GaN/AlGaN quantum wells
Journal Volume Year Pages Concerned
J. Crystal Growth 180/190 1998 644_648

Author Title of Article
M. Shibata, M. Kurimoto, J. Yamamoto, T. Honda and H. Kawanishi GaN/BAIN Heterostructure Grown on (0001) 6H-SiC by Metalorganic Vapor Phase Epitaxy,
Journal Volume Year Pages Concerned
J. Crystal Growth 189/190 1998 445_447

Author Title of Article
J. Yamamoto, M. Shibata, M. Kurimoto, T. Honda and H. Kawanishi Orign of Cracks in GaN/AlGaN DH Structure Grown on 6H-SiC by Metalorganic VApor Phase Epitaxy
Journal Volume Year Pages Concerned
Journal of Crystal Growth - The Special Issue for the 2nd ICNS'97 - (to be published) 189/190 1998 193_196

Author Title of Article
M. Kurimoto, M. Shibata, J. Yamamoto, T. Honda and H. Kawanishi Direct Growth of GaN on (0001)6H-SiC by Low Pressure MOVPE with Flow Channel
Journal Volume Year Pages Concerned
J. Crystal Growth 189/190 1998 189_192

Author Title of Article
T. Honda, A. Inoue, M. Mori, T. Shirasawa, N. Mochida, K. Saotome, T. Sakaguchi, A. Ohtomo, M. Kawasaki, H. GaN Growth on Ozonized Sahire (0001) substrates by MOVPE
Journal Volume Year Pages Concerned
J. Crystal Growth 195 1998 319_322

Author Title of Article
M. Watanabe, T. Kobayashi, T. Kawahashi, A. Hino, T. Watanabe, T. Matumoto and M. Suzuki 195Pt NMR spectra and biological activity of platinum(IV) complexes with dipepties"J. Inorganic Biochemistry, vol. 73, 1-5 (1999
Journal Volume Year Pages Concerned
J. Inorganic Biochemistry 73 199 1_5

Author Title of Article
T. Honda, T. Shirasawa, N. Mochida, A. Inoue, A. Matsutani, T. Sakaguchi, F. Koyama, H. Kawanishi and K. Iga Design and Fabrication Process Consideration of GaN-Based Surface Emitting Lasers
Journal Volume Year Pages Concerned
Electronics & Communications in Japan, Part 2 82 1999 97_104

Author Title of Article
T. Honda, Y. Yamamoto and H. Kawanishi Direct Growth of GaN on (0001) 6H-SiC
Journal Volume Year Pages Concerned
Blue Laser and Light Emitting Diodes II, Ed. K. Onabe et al., Ohmsha, Tokyo   1999 150_153

Author Title of Article
T. Honda, H. Kawanishi, T. Sakaguchi, F. Koyama and K. Iga Characteristic Temperature Estimation for GaN-Based Lasers
Journal Volume Year Pages Concerned
MRS Internet J. Nitride Semicond. Res. 4S1 1999 G6.2_

Author Title of Article
M. Kurimoto, T. Nakata, Y. Ishihara, M. Shibata, T. Honda and H. Kawanishi Tensile Strain Introduced in AlN Layer Grown by Metal-Organic Vapor-Phase Epitaxy
Journal Volume Year Pages Concerned
Jpn. J. Appl. Phys. 38 1999 L551_L553

Author Title of Article
Y. Ishihara, J. Yamamoto, M. Kurimoto, T. Takano, T. Honda, and H. Kawanishi Dependence of Crystal Quality on Residual Strain-Controlled Thin AlN Layer Grown by Metalorganic Vapor Phase Epitaxy
Journal Volume Year Pages Concerned
Jpn. J. Appl. Phys. 38 1999 L1296_L1298

Author Title of Article
M. Kurimoton, T. Nakada, Y. Ishihara, M. Shibata, T. Takano, J. Yamamoto, T. Honda and H. Kawanishi Possibility of Strain Control in AlN Layer Grown by MOVPE on (0001)6H-SiC with GaN/AlN Buffer
Journal Volume Year Pages Concerned
Phys. Stat. Sol. (a) 176 1999 665_669

Author Title of Article
T. Honda, M. Shibata, M. Kurimoto, M. Tsubamoto, J. Yamamoto and H. Kawanishi Band-Gap Energy and Effective Mass of BGaN
Journal Volume Year Pages Concerned
Jpn. J. Appl. Phys. 39 2000 L2389_L2393

Author Title of Article
T. Honda, M. Kurimoto, M. Shibata and H. Kawanishi Excitonic emission of BGaN grown on (0001) 6H-SiC by metal-organic vapor-phase epitaxy
Journal Volume Year Pages Concerned
J. Luminescence 87-89 2000 1274_1276

Author Title of Article
T. Takano, M. Kurimoto, J. Yamamoto, M. Shibata, Y. Ishihara M. Tsubamoto, T. Honda and H. Kawanishi Room Temperature Photoluminescence from BAlGaN-Based Double or Single Heterostructures for UV Laser Diode
Journal Volume Year Pages Concerned
Physica status Solidi Rapid Research Note (a), 180 2000 231_234

Author Title of Article
T. Takano, M. Kurimoto, J. Yamamoto, Y. Ishihara, M. Horie and H. Kawanishi Improved 250nm UV PL Spectra from BAlGaN/AlN MQW on 6H-SiC Substrate by MOVPE Using TEB
Journal Volume Year Pages Concerned
Proc. Int. Warkshop on Nitride Semiconductors IPAP Conf. Series 1   2000 147_149

Author Title of Article
M. Kurimoto, T. Takano, J. Yamamoto, Y. Ishihara, M. Horie, M. Tsubamoto and H. Kawanishi Growth of BGaN/AlGaN multi-quantum-well structure by metalorganic vapor phase epitaxy
Journal Volume Year Pages Concerned
J. Crystal Growth, 221 2000 378_381

Author Title of Article
T. Honda, N. Fujita, K. Maki, Y. Yamamotom and H. Kawanishi Initial gowth monitoing of GaN epitaxy on 6H-SiC by metal-organicmolecular beam epitaxy
Journal Volume Year Pages Concerned
J. Crystal Growth 209 2000 392_395

Author Title of Article
M. Mori, A. Kikuchi, and K. Kishino Characterization of GaN grown with a high growth rate by RF-radical source molecular beam epitaxy
Journal Volume Year Pages Concerned
Institute of Physics Conference Series : Chapter 5 (IOP Publishing Ltd) 142 1996 839_842

Author Title of Article
I. Nomura, K. Kishino, and A. Kikuchi Theoretical analysis of cubic GaInN/GaN/AlGaN quantum well lasers
Journal Volume Year Pages Concerned
Institute of Physics Conference Series : Chapter 6 (IOP Publishing Ltd) 142 1996 1011_1014

Author Title of Article
I. Nomura, K. Kishino, and A. Kikuchi Theoretical estimation of threshold current of cubic GaInN/GaN/AlGaN quantum well lasers
Journal Volume Year Pages Concerned
Solid-State Electronics 41 1997 283_286

Author Title of Article
I. Nomura, K. Kishino, and A. Kikuchi Theoretical estimation of threshold current of cubic GaInN/GaN/AlGaN quantum well lasers
Journal Volume Year Pages Concerned
Solid-State Electronics 41 1997 283_286

Author Title of Article
M. Yoshizawa, A. Kikuchi, M. Mori, N. Fujita, and K. Kishino Growth of self-organized GaN nano-structures on A1203 (0001) by RF-radical source molecular beam epitaxy
Journal Volume Year Pages Concerned
Jpn. J. Appl. Phys. 36 1997 L459_L462

Author Title of Article
T. Morita, H. Shimbo, T. Nagano, I. Nomura, A. Kikuchi, and K. Kishino Refractive index measurements of MgZnCdSe II-VI compound semiconductors grown on InP substrates and fabrications of 500-600 nm range MgZnCdSe distributed Bragg reflectors
Journal Volume Year Pages Concerned
J. Appl. Phys. 81 1997 7575_7579

Author Title of Article
M. Yoshizawa, A. Kikuchi, M. Mori, N. Fujita, and K. Kishino Self-organization of GaN nano-structures on c-A1203 by RF-radical gas source molecular beam epitaxy
Journal Volume Year Pages Concerned
Institute of Physics Conference Series (IOP Publishing Ltd)   1997  

Author Title of Article
A. Kikuchi, M. Yoshizawa, M. Mori, N. Fujita, K. Kushi, H. Sasamoto and K. Kishino Shutter Control Method for Control of Al Contents in AlGaN Quasi-ternary Compounds grown by RF-MBE
Journal Volume Year Pages Concerned
J. Crystal Growth 189/190 1998 109_113

Author Title of Article
M. Yoshizawa, A. Kikuchi, N. Fujita, K. Kushi, H. Sasamoto and K. Kishino Self-organization of GaN/A10.18Ga0.82N multi-layer nano-columns on (0001)A1203 by RF molecular beam epitaxy for fabricating GaN quantum disks
Journal Volume Year Pages Concerned
J. Cryst. Growth 189-190 1998 138_141

Author Title of Article
N. Fujita, M. Yoshizawa, K. Kushi, H. Sasamoto, A. Kikuchi and K. Kishino Epitaxial Growth of GaN with a High Growth Rate of 1.4mm/hr by RF-radical Source Molecular Beam Epitaxy
Journal Volume Year Pages Concerned
J. Crystal Growth 189/190 1998 385_389

Author Title of Article
K. Kishino et al. High speed growth of device quality GaN and InGaN by RF-MBE
Journal Volume Year Pages Concerned
Materials Science and Engineering B 59 1999 65_68

Author Title of Article
K. Kishino et al. InGaN/GaN MQW and Mg-doped GaN growth using a shutter control method by RF-Molecular beam epitaxy
Journal Volume Year Pages Concerned
Phys. Stat. Sol. (a) 176 1999 273_277

Author Title of Article
K. Kishino et al. 2.6mm/h high speed growth of GaN by RF-molecular beam epitaxy and improvement of crystal quality by migration enhanced epitaxy
Journal Volume Year Pages Concerned
Phys. Stat. Sol. (a) 176 1999 323_328

Author Title of Article
D. Sugihara, A. Kikuchi, K. Kusakabe, S. Nakamura, Y. Toyoura, T. Yamada and K. Kishino High-quality GaN on AIN Multiple Intermediate Layer with Migration Enhanced Epitaxy by RF-Molecular Beam Epitaxy
Journal Volume Year Pages Concerned
Jpn. J. Appl. Phys. 39 2000 L197_L199

Author Title of Article
A. Kikuchi, T. Yamada, S. Nakamura, K. Kusakabe, D. Sugihara and K. Kishino Improvement of Crystal Quality of RF-Plasma-Assisted Molecular Beam Epitaxy Grown Ga-Polarity GaN by High-Temperature Grown AIN Multiple Intermediate lavers
Journal Volume Year Pages Concerned
Jpn. J. Appl. Phys. 39 2000 L330_L333

Author Title of Article
D. Sugihara, A. Kikuchi, K. Kusakabe, S. Nakamura, Y. Toyoura, T. Yamada and K. Kishino Suppression of Inversion Domains and Decrease of Threading Dislocations in Migration Enhanced Epitaxial GaN by RF-Molecular Beam Epitaxv
Journal Volume Year Pages Concerned
phys. stat. sol., (a) 180 2000 65_71

Author Title of Article
A. Kikuchi, T. Yamada, K. Kusakabe, D. Sugihara, S. Nakamura and K. Kishino Reduction of Threading Dislocations in RF-MBE Grown Polarity Controlled GaN by AIN Multiple Interlayers
Journal Volume Year Pages Concerned
IPAP Conference Series 1 Proceedings of International Workshop on Nitride Semiconductors   2000 154_157

Author Title of Article
Y. Toyoura, K. Kusakabe, T. Yamada, R. Bannai, A. Kikuchi and K. Kishino GaN-Based Resonant Cavity-Enhanced UV-Photodetectors
Journal Volume Year Pages Concerned
IPAP Conference Series 1 Proceedings of International Workshop on Nitride Semiconductors   2000 907_910

Author Title of Article
K. Kusakabe, K. Kishino, A. Kikuchi, T. Yamada, D. Sugihara and S. Nakamura Reduction of Threading Dislocations in Migration Enhanced Epitaxy Grown GaN with N-Polarity by Use of AIN Multiple Interlayer
Journal Volume Year Pages Concerned
J. Cryst. Growth, (to be published)   2001  

Author Title of Article
A. Kikuchi, T. Yamada, S. Nakamura, K. Kusakabe, D. Sugihara and K. Kishino Improvement of Electrical Property and Surface Morphology of GaN Grown by RF-plasma Assisted Molecular Beam Epitaxy by Introduction of Multiple AIN Intermediate Laver
Journal Volume Year Pages Concerned
Materials Science & Engineering B, (to be published)   2001  

Author Title of Article
K. Kusakabe, A. Kikuchi and K. Kishino Characterization of Overgrown GaN Layers on Nano-Columns Grown by RF-Molecular Beam Epitaxy
Journal Volume Year Pages Concerned
Jpn. J. Appl. Phys. 40 2001 L192_L194

Author Title of Article
K. Kusakabe, A. Kikuchi and K. Kishino Step Flow Surface Morphology in Plasma Assisted Molecular Beam Epitaxy Grown GaN
Journal Volume Year Pages Concerned
MRS Internet Journal of Nitride Semiconductor Research   2001  

Author Title of Article
K. Kusakabe, T. Yamada, Y. Toyoura, R. Bannai, A. Kikuchi and K. Kishino Quasi-Free Standing GaN Epitaxial Layer Grown on Nano-Columnar GaN by RF-Plasma Assisted Molecular Beam Epitaxy
Journal Volume Year Pages Concerned
Proceedings of International Symposium on Compound Semiconductors 2000, (to be published)   2001  

Author Title of Article
H. Amano, T. Takeuchi, S. Sota, H. Sakai and I. Akasaki Structural and Optical Properties of Nitride Based Heterostructure and Quantum Well Structure
Journal Volume Year Pages Concerned
Mat. Res. Soc. Symp. Proc. 449 1997 1143_1150

Author Title of Article
T. Takeuchi, S. Sota, M. Katsuragawa, M. Komori, H. Takeuchi, H. Amano and I. Akasaki Quantum-Confined Stark Effect due to Piezoelectric Fields in GaInN Strained Quantum Wells
Journal Volume Year Pages Concerned
Jpn. J. Appl. Phys. 36 1997 L382_L385

Author Title of Article
S. Chichibu, T. Azuhata, H. Amano and I. Akasaki Optical Properties of Tensile-strained Wurtzite GaN Epitaxial layers
Journal Volume Year Pages Concerned
Appl. Phys. Lett. 70 1997 2085_2087

Author Title of Article
Y. Kaneko, N. Yamada, T. Takeuchi Melt-back Etching of GaN
Journal Volume Year Pages Concerned
Solid-State Electron 41 1997 295_298

Author Title of Article
I. Akasaki and H. Amano Progress and prospect of group-III nitride semiconductors
Journal Volume Year Pages Concerned
J. Crystal Growth 175/176 1997 29_36

Author Title of Article
I. Akasaki and H. Amano Crystal Growth and Conductivity of Group III Nitride Semiconductors and Thir Application to Short Wavelength Light Emitters
Journal Volume Year Pages Concerned
Jpn. J. Appl. Phys. 36 1997 5393_5408

Author Title of Article
I. Akasaki Progress in Crystal Growth and Conductivity Control of III Nitride Semiconductors -Seeking Blue Emission
Journal Volume Year Pages Concerned
Ext. Abstr. of the Intl. Conf. on Solid State Devices and Mater., Hamamatsu, 2-3,   1997  

Author Title of Article
S. Yamaguchi, H. Amano and I. Akasaki et. al Observation of photoluminescence from All-xInxN heteroepitaxial films grown by metalorganic vapor phase epitaxy
Journal Volume Year Pages Concerned
Appl. Phys. Lett. 73 1998 830_831

Author Title of Article
H. Kato, H. Amano, I. Akasaki and N. Yamada et al. GaN Based Laser Diode with Focused Ion Beams Etched Mirrors
Journal Volume Year Pages Concerned
Jpn. J. Appl. Phys. 37 1998 444_446

Author Title of Article
T. Takeuchi, C. Wetzel, H. Amano, I. Akasaki and N. Yamada et. al Determination of Piezoelectric Fields in GaInN Strained Quantum Wells Using the Quantum-confined Stark effect
Journal Volume Year Pages Concerned
Appl. Phys. Lett. 73 1998 1691_1693

Author Title of Article
T. Takeuchi, S. Sota, H. Sakai, H. Amano, I. Akasaki, Y. Kaneko, S. Nakagawa, Y. Yamaoka, N. Yamada Quantum-confined Stark Effect in Strained GaInN Quantum Wells on Sapphire (0001)
Journal Volume Year Pages Concerned
J. Crystal Growth 189/190 1998 616_620

Author Title of Article
T. Takeuchi, T. Detchprohm, M. Iwaya, N. Hayashi, K. Isomura, K. Kimura, and M. Yamaguchi H. Amano and I. Akasaki Yw. Kaneko, R. Shioda, S. Watanabe, T. Hidaka, Y. Yamaoka. Ys. Kaneko and N. Yamada Improvement of far-field pattern in nitride laser diodes
Journal Volume Year Pages Concerned
Appl. Phys. Lett. 75 1999 2960_2962

Author Title of Article
I. Akasaki, S. Kamiyama, T. Detchprohm, T. Takeuchi and H. Amano Growth of Crack-Free Thick AlGaN Layer and its Application to GaN Based Laser Diodes
Journal Volume Year Pages Concerned
MRS Internet J. Nitride Semicond. Res.,   2000  

Author Title of Article
M. Iwaya, S. Terao, N. Hayashi, T. Kashima, H. Amano, I. Akasaki Realization of crack-free and high-quality thick AlxGal-xN for UV optoelectronics using low-temperature interlayer
Journal Volume Year Pages Concerned
Applied Surface Science 159/160 2000 405_413

Author Title of Article
T. Sato, M. Iwaya, K. Isomura, T. Ukai, S. Kamiyama, H. Amano, I. Akasaki Theoretical Analysis of Optical Transverse-Mode Control on GaN-Based Laser Diodes
Journal Volume Year Pages Concerned
IEICE TRANSACTIONS ON ELECTRONICS E SERIES C, 83 2000 573_578

Author Title of Article
S. Kamiyama, M. Iwaya, H. Amano and I. Akasaki Performance of GaN-Based Semiconductor Laser with Spectral Broadening due to Compositional Inhomogeneity in GaInN Active Layer
Journal Volume Year Pages Concerned
Jpn. J. Appl. Phys. 39 2000 390_392

Author Title of Article
N. Hayashi, S. Kamiyama, T. Takeuchi, M. Iwaya, H. Amano, I. Akasaki, S. Watanabe, Y. Kaneko and N. Yamada Electrical conductivity of low temperature deposited Al0.1Ga0.9N interlayer
Journal Volume Year Pages Concerned
Jpn. J. Appl. Phys. 39 2000 6493_6495


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