| 1.Research Institution | Osaka University | |
| 2.University-Industry Cooperative Research Committee | 154th Committee on Semiconductor Interfaces and Their Applications | |
| 3.Term of Project | FY1996〜FY2000 | |
| 4.Project Number | 96R15401 | |
| 5.Title of Project | Developmental Research on New Type Electron Emitter Using Diamond |
| Name | Institution,Department | Title of Position |
| Toshimichi, Ito | Osaka University, Graduate School of Engineering | Professor |
7.Core Members
8.Cooperating Researchers
| Names | Institution,Department | Title of Position |
| Akio, Hiraki | Kochi Univ. of Technol., Industry-Academics Cooper. Center | Professor |
| Takeshi, Kobayashi | Osaka University, Graduate School of Engineering Science | Professor |
| Akimitsu, Hatta | Kochi Univ. of Technol., Electronic & Photonic Systems Eng. | Assoc. Prof. |
9.Summary of Research Results
|
In the present research project, the possibility of chemical-vapor-deposited diamond for electron emitting materials has been investigated from various view points. The main results obtained are as follows. The surface structure and the negative electron affinity of diamond (100) chemisorbed with hydrogen have been understood. The dependence of the electron affinity on the amount of chemisorbed oxygen can be described in terms of the Topping model. The electrical properties of the electrically conducting surface layer have been studied in details. Using these characteristics, we have fabricated two types of plane electron emitters: diode type electron emitter where a high electric field is applied in highly insulating diamond layer, and field electron emitters where a high field is applied in vacuum. In the former case, various fabrication processes including highly insulating layer, thin-layered structure and fine device structure have been developed, which leads to approximately 100% electron emission efficiencies (the ratios of the emission current to the driving current) at very high fields on the order of 107 V/cm. The mechanism of the high efficiency performance can be explained in terms of impact ionization processes of carriers at the high fields, which is theoretically supported by Monte Carlo simulations. It is also emphasized that high-quality diamond layers can be grown at usual growth rates of ＝1 μm/h. On the other hand, in the case of the field electron emitter using diamond, the form in nanometer-sized diamond particles has been found to be very suitable to large-area and low-temperature fabrication. Electron emitting devices using such diamond films have been found to be operated at low averaged fields <１０V/μm and to yield emission currents> 1 mA/cm2. |
10.Key Words
(1)electron emitter、(2)CVD diamond、(3)highly insulating diamond
(4)ultra-fine diamond particle、(5)negative electron affinity、(6)hydrogenated surface
(7)diode type electron emitter、(8)plane type electron emitter、(9)field electron emitter
11.References
| Author | Title of Article | |||
| H. Yagyu | Intrinsic and Implantation-Induced Defects in CVD Diamond | |||
| Journal | Volume | Year | Pages Concerned | |
| Physica Status Solidi (a) | 154 | 1996 | 305-320 | |
| Author | Title of Article | |||
| T. Kita | Transient Cathodoluminescence Spectroscopy of Synthetic Diamond Films | |||
| Journal | Volume | Year | Pages Concerned | |
| Diamond Films and Technology | 6･3 | 1996 | 139-145 | |
| Author | Title of Article | |||
| H. Nishiwaki | Heteroepitaxy of GaS and GaSe on Diamond and GaAs Surfaces | |||
| Journal | Volume | Year | Pages Concerned | |
| Diamond Films and Technology | 6･3 | 1996 | 147-156 | |
| Author | Title of Article | |||
| J. H. Won | Effect of Boron Inclusion on the Quality of Chemical Vapor Deposited Diamond Films | |||
| Journal | Volume | Year | Pages Concerned | |
| Diamond Films and Technology | 6･3 | 1996 | 171-180 | |
| Author | Title of Article | |||
| T. Kobayashi | Prospect of Semiconducting Diamond Electronics | |||
| Journal | Volume | Year | Pages Concerned | |
| Diamond Films and Technology | 6･4 | 1996 | 199-216 | |
| Author | Title of Article | |||
| H. Miyake | Effect of Oxygen Additive on Microwave-Plasma for Diamond Film Synthesis Studied by Plasma-Impedance-Measurement | |||
| Journal | Volume | Year | Pages Concerned | |
| Japanese Journal of Applied Physics | 35･7B | 1996 | L936-939 | |
| Author | Title of Article | |||
| S. Suzuki | Observation of Capacitance Hunching at the Flat-Band-Voltage in Boron-Doped Diamond Metal/Insulator/Semiconductor Structure | |||
| Journal | Volume | Year | Pages Concerned | |
| Japanese Journal of Applied Physics | 35･8B | 1996 | L1081-L1084 | |
| Author | Title of Article | |||
| H. Yagi | Hydrogen and Deuterium Profile in Homoepitaxially Grown CVD Diamonds by ERDA Method | |||
| Journal | Volume | Year | Pages Concerned | |
| Nuclear Instruments and Methods in Physics Research B | 118 | 1996 | 318-321 | |
| Author | Title of Article | |||
| T. Kita | Electron-Beam Electroreflectance Spectroscopy of Semiconductors | |||
| Journal | Volume | Year | Pages Concerned | |
| Japanese Journal of Applied Physics | 35･10 | 1996 | 5367-5373 | |
| Author | Title of Article | |||
| A. Hatta | Characterization and Control of Properties of Diamond Surface and Its Application to Electron Emitter | |||
| Journal | Volume | Year | Pages Concerned | |
| Journal of Vacuum Society of Japan | 39･11 | 1996 | 618-625 | |
| Author | Title of Article | |||
| A. Hatta | Diamond Film Growth by Pulse-Modulated Magnetoactive Microwave Plasma Chemical Vapour Deposition | |||
| Journal | Volume | Year | Pages Concerned | |
| Thin Solid Films | 281-282 | 1996 | 264-266 | |
| Author | Title of Article | |||
| H. Makita | Ultrahigh Particle Density Seeding with Nanocrystal Diamond Particles | |||
| Journal | Volume | Year | Pages Concerned | |
| Thin Solid Films | 281-282 | 1996 | 279-281 | |
| Author | Title of Article | |||
| N. Jiang | Electron Microscopic Analysis of Chemical-Vapour Deposited Diamond Surface by a Novel Method | |||
| Journal | Volume | Year | Pages Concerned | |
| Thin Solid Films | 281-282 | 1996 | 282-284 | |
| Author | Title of Article | |||
| J. H. Won | The Investigation of Defect Formation in Chemical Vapor Deposited Diamond Using Photoluminescence by Ultraviolet Synchrotron Radiation | |||
| Journal | Volume | Year | Pages Concerned | |
| Applied Physics Letters | 69･27 | 1996 | 4179-4181 | |
| Author | Title of Article | |||
| H. Suzuki | Control of the Plasma and Measurement of Radicals for Diamond Film Synthesis in Vapor Phase | |||
| Journal | Volume | Year | Pages Concerned | |
| Proceedings of 13th Symposium on Plasma Processing | AP962301 | 1996 | 57-60 | |
| Author | Title of Article | |||
| J. H. Won | Photoluminescence Properties of CVD Diamond Excited by Ultra-Violet Synchrotron Radiation | |||
| Journal | Volume | Year | Pages Concerned | |
| Materials Research Society Symposium Proceedings | 423 | 1996 | 717-722 | |
| Author | Title of Article | |||
| A. Hiraki | Low-Temperature CVD of Diamond and NEA Surface of Diamond | |||
| Journal | Volume | Year | Pages Concerned | |
| Proceedings of the International School of Physics "Enrico Fermi | 1997 | 179-193 | ||
| Author | Title of Article | |||
| S. Sonoda | Effect of Nitrogen Incorporation on Electrical Properties of Boron-Doped Diamond Films | |||
| Journal | Volume | Year | Pages Concerned | |
| Applied Physics Letters | 70･19 | 1997 | 2574-2576 | |
| Author | Title of Article | |||
| N. Jiang | Interfacial Analysis of CVD Diamond on Copper Substrates | |||
| Journal | Volume | Year | Pages Concerned | |
| Diamond and Related Materials | 6 | 1997 | 743-746 | |
| Author | Title of Article | |||
| J. H. Won | Effects of Remote Hydrogen Plasma Treatment (RHPT) on Ion-Implanted CVD Diamond | |||
| Journal | Volume | Year | Pages Concerned | |
| Diamond and Related Materials | 6 | 1997 | 1041-1046 | |
| Author | Title of Article | |||
| A. Hiraki | Diamond Semiconductor of Negative Electron Affinity - Potential Material for Flat Display Panel - | |||
| Journal | Volume | Year | Pages Concerned | |
| Oyo Buturi | 66･3 | 1997 | 235-241 | |
| Author | Title of Article | |||
| H. Yagi | Initial Stage of Bias-Enhanced Diamond Nucleation Induced by Microwave Plasma | |||
| Journal | Volume | Year | Pages Concerned | |
| Japanese Journal of Applied Physics | 36･4B | 1997 | L507-L510 | |
| Author | Title of Article | |||
| Y. Shirakawa | Hall Effect Measurement and Band Bending Calculation of Hydrogenated Diamond Thin Films Grown by Chemical Vapor Deposition | |||
| Journal | Volume | Year | Pages Concerned | |
| Japanese Journal of Applied Physics | 36･6 | 1997 | 3414-3417 | |
| Author | Title of Article | |||
| Y. Yun | Surface State Density Distribution of Semiconducting Diamond Films Measured from Al/CaF2/I-Diamond Metal-Insulator Semiconductor Diodes and Transistors Deposition | |||
| Journal | Volume | Year | Pages Concerned | |
| Journal of Applied Physics | 82･7 | 1997 | 3422-3429 | |
| Author | Title of Article | |||
| C. L. Wang | Investigation of Distribution of Defects and Impurities in Boron-Doped CVD Diamond Film by Cathodoluminescence Spectroscopy | |||
| Journal | Volume | Year | Pages Concerned | |
| Thin Solid Films | 308-309 | 1997 | 279-283 | |
| Author | Title of Article | |||
| H. M. Jeon | Large Area Diamond Nucleation on Si(001) Using Magnetoactive Microwave Plasma CVD | |||
| Journal | Volume | Year | Pages Concerned | |
| Applied Surface Science | 113-114 | 1997 | 244-248 | |
| Author | Title of Article | |||
| J. H. Won | Remote Hydrogen Plasma Treatment (RHPT) of Ion Implanted CVD Diamond | |||
| Journal | Volume | Year | Pages Concerned | |
| Applied Surface Science | 113-114 | 1997 | 249-253 | |
| Author | Title of Article | |||
| N. Jiang | Structural Analysis of Ion-Implanted Chemical-Vapor-Deposited Diamond by Transmission Electron Microscope | |||
| Journal | Volume | Year | Pages Concerned | |
| Applied Surface Science | 113-114 | 1997 | 254-258 | |
| Author | Title of Article | |||
| Y. Yun | Thin Film CaF2 Stabilizing Effect on Single-Crystal Diamond Surface | |||
| Journal | Volume | Year | Pages Concerned | |
| Applied Surface Science | 117-118 | 1997 | 570-573 | |
| Author | Title of Article | |||
| H. Kawamura | Cathodoluminescence Measurement of CVD Diamond Surface | |||
| Journal | Volume | Year | Pages Concerned | |
| Applied Surface Science | 117-118 | 1997 | 578-581 | |
| Author | Title of Article | |||
| T. Yamamoto | Surface Observation of Beta SiC Substrate after Negative Bias Treatment in Diamond Deposition | |||
| Journal | Volume | Year | Pages Concerned | |
| Applied Surface Science | 117-118 | 1997 | 582-586 | |
| Author | Title of Article | |||
| N. Jiang | Interface Characterization of Chemical-Vapour-Deposited Diamond on Cu and Pt Substrates Studied by Transmission Electron Microscopy | |||
| Journal | Volume | Year | Pages Concerned | |
| Applied Surface Science | 117-118 | 1997 | 587-591 | |
| Author | Title of Article | |||
| A. Hatta | Electron Emitter Device of NEA Diamond Thin Film | |||
| Journal | Volume | Year | Pages Concerned | |
| Applied Surface Science | 117-118 | 1997 | 592-596 | |
| Author | Title of Article | |||
| A. Hatta | Electrical Properties of Boron-Doped Diamond Films Grown under the Control of Nitrogen Incorporation | |||
| Journal | Volume | Year | Pages Concerned | |
| Super Carbon | 1998 | 151-154 | ||
| Author | Title of Article | |||
| Y. Yokota | Observation of Ultraviolet Cathodoluminescent Band from Boron-Doped Diamond Film Grown Epitaxially on Platinum Single Crystal | |||
| Journal | Volume | Year | Pages Concerned | |
| Super Carbon | 1998 | 235-241 | ||
| Author | Title of Article | |||
| A. Hatta | Low Temperature Chemical Vapor Deposition | |||
| Journal | Volume | Year | Pages Concerned | |
| Handbook of Industrial Diamonds and Diamond Films | 27 | 1998 | 887-899 | |
| Author | Title of Article | |||
| A. B. M. O. Islam | Surface Modification of B-Doped Diamond Films by GaS | |||
| Journal | Volume | Year | Pages Concerned | |
| Diamond Films and Technology | 8･4 | 1998 | 271-280 | |
| Author | Title of Article | |||
| H. Tanaka | Electrical Stabilization of Diamond MIS Interface by Employing BaF2 Gate Insulator Crystal | |||
| Journal | Volume | Year | Pages Concerned | |
| Diamond Films and Technology | 8･4 | 1998 | 281-288 | |
| Author | Title of Article | |||
| Y. Yokota | Temperature Dependence of 248 nm Cathodoluminescence Band from Heavily Boron-Doped Diamond Films Epitaxially Grown on Platinum | |||
| Journal | Volume | Year | Pages Concerned | |
| Diamond Films and Technology | 8･5 | 1998 | 347-354 | |
| Author | Title of Article | |||
| T. Kita | Band-Edge Structure of Diamond Films Grown on Silicon | |||
| Journal | Volume | Year | Pages Concerned | |
| Diamond Films and Technology | 8･5 | 1998 | 355-360 | |
| Author | Title of Article | |||
| Y. Yun | Electrical Stabilization of Diamond Film Surface for Electronic Device Application | |||
| Journal | Volume | Year | Pages Concerned | |
| Diamond Films and Technology | 8･5 | 1998 | 361-368 | |
| Author | Title of Article | |||
| N. Jiang | Nitrogen Doping Effects on Electrical Properties of Diamond Films | |||
| Journal | Volume | Year | Pages Concerned | |
| Japanese Journal of Applied Physics | 37･10A | 1998 | L1175-L1177 | |
| Author | Title of Article | |||
| Y. Yun | Electrical Stabilization of Diamond MIS Interface and MISFETs by Ultrahigh-Vacuum Process | |||
| Journal | Volume | Year | Pages Concerned | |
| Materials Research Society Symposium Proceedings | 512 | 1998 | 217-222 | |
| Author | Title of Article | |||
| M. Nishimura | Highly Efficient Electron Emission Diode of Single-Crystalline Chemical-Vapor-Deposition Diamond | |||
| Journal | Volume | Year | Pages Concerned | |
| Japanese Journal of Applied Physics | 37･9A/B | 1998 | L1011-L1013 | |
| Author | Title of Article | |||
| C. L. Wang | Investigation of Surface of Boron-Doped CVD Diamond by Cathodoluminescent Spectroscopy | |||
| Journal | Volume | Year | Pages Concerned | |
| Diamond and Related Materials | 7 | 1998 | 748-752 | |
| Author | Title of Article | |||
| Y. Yokota | Edge Emission Observedin Heavily Boron-Doped Diamond Films Epitaxially Grown on Platinum | |||
| Journal | Volume | Year | Pages Concerned | |
| Applied Physics Letters | 73･11 | 1998 | 1493-1495 | |
| Author | Title of Article | |||
| Y. Yun | Electrical Properties of Al/CaF2/I-Diamond Metal-Insulator-Semiconductor Field-Effect-Transistor Fabricated by Ultrahigh-Vacuum Process | |||
| Journal | Volume | Year | Pages Concerned | |
| Japanese Journal of Applied Physics | 37･11A | 1998 | L1293-L1296 | |
| Author | Title of Article | |||
| T. Hosomi | Role of Xenon Additive in Microwave Plasma-Assisted (H2+CH4) Chemical Vapor Deposition for Diamond Thin Film Growth | |||
| Journal | Volume | Year | Pages Concerned | |
| Journal of Applied Physics | 84･11 | 1998 | 281-288 | |
| Author | Title of Article | |||
| Y. Koide | Field Emission Characteristics of Non-Doped Polycrystalline Diamond Films Synthesized by MPCVD | |||
| Journal | Volume | Year | Pages Concerned | |
| Diamond Films and Technology | 8･6 | 1998 | 407-413 | |
| Author | Title of Article | |||
| N. Jiang | Crystalline and Electrical Characteristics of N-Doped Diamond Films | |||
| Journal | Volume | Year | Pages Concerned | |
| Diamond Films and Technology | 8･6 | 1998 | 457-466 | |
| Author | Title of Article | |||
| C. L. Wang | Fine-Structure Study on First-Order Diamond Raman Line of CVD Diamond Particles | |||
| Journal | Volume | Year | Pages Concerned | |
| Diamond Films and Technology | 8･6 | 1998 | 467-475 | |
| Author | Title of Article | |||
| T. Ito | Highly Efficient Electron Emission from Diode-Type Plane Emitters Using Chemical-Vapor-Deposited Single-Crystalline Diamond | |||
| Journal | Volume | Year | Pages Concerned | |
| Applied Physics Letters | 73･25 | 1998 | 3739-3741 | |
| Author | Title of Article | |||
| H. Tanaka | Improved Stability of Metal-Insulator-Diamond Semiconductor Interface by Employing BaF2 Insulator Film | |||
| Journal | Volume | Year | Pages Concerned | |
| Japanese Journal of Applied Physics | 37･12A | 1998 | L1444-L1447 | |
| Author | Title of Article | |||
| T. Hosomi | Role of Xenon Additive in Microwave Plasma-Assisted (H2+CH4) Chemical Vapor Deposition for Diamond Thin Film Growth | |||
| Journal | Volume | Year | Pages Concerned | |
| Journal of Applied Physics | 84･11 | 1998 | 6059-6063 | |
| Author | Title of Article | |||
| A. Hatta | Electron Emission from Diamond Films | |||
| Journal | Volume | Year | Pages Concerned | |
| Israel Journal of Chemistry | 38 | 1998 | 113-120 | |
| Author | Title of Article | |||
| T. Maki | Present Research Status of Semiconducting Diamond Devices | |||
| Journal | Volume | Year | Pages Concerned | |
| Proceedings of the Electronics, Information and System Conference, IEE of Japan | 7 | 1998 | 15-16 | |
| Author | Title of Article | |||
| T. Ito | Development Research on New Type Electron Emitter Using Diamond | |||
| Journal | Volume | Year | Pages Concerned | |
| The Production & Technique | 51･1 | 1999 | 63-66 | |
| Author | Title of Article | |||
| M. Nishimura | Highly-Efficient at Electron Emitter of Single-Crystalline CVD Diamond | |||
| Journal | Volume | Year | Pages Concerned | |
| Diamond and Related Materials | 7 | 1999 | 754-758 | |
| Author | Title of Article | |||
| H. Yagi | Surface Hydrogen Densities of Variously Treated CVD Diamond Surfaces | |||
| Journal | Volume | Year | Pages Concerned | |
| Applied Surface Science | 137 | 1999 | 50-56 | |
| Author | Title of Article | |||
| H. M. Jeon | Oxygen Plasma Etching of Carbon Films Unintentionally Deposited on Chamber Walls in Magneto-Active Microwave Chemical Vapor Deposition System | |||
| Journal | Volume | Year | Pages Concerned | |
| Journal of Vacuum Society of Japan | 42･3 | 1999 | 217-220 | |
| Author | Title of Article | |||
| A. Hatta | Electrical Properties of B-Doped Homoepitaxial Diamond Films Grown from UHP Gas Sources | |||
| Journal | Volume | Year | Pages Concerned | |
| Diamond and Related Materials | 8 | 1999 | 1470-1475 | |
| Author | Title of Article | |||
| Y. Yokota | Cathodoluminescence of Boron-Doped Heteroepitaxial Diamond Films on Platinum | |||
| Journal | Volume | Year | Pages Concerned | |
| Diamond and Related Materials | 8 | 1999 | 1587-1591 | |
| Author | Title of Article | |||
| H. Kawamura | Fabrication and Characterization of Planar Diamond Electron Emitters | |||
| Journal | Volume | Year | Pages Concerned | |
| Japanese Journal of Applied Physics | 38･4B | 1999 | 2622-2625 | |
| Author | Title of Article | |||
| Y. Yun | Electrical Properties of Al/(BaXCa1-X)F2/i-Diamond Metal-Insulator-Semiconductor Structures | |||
| Journal | Volume | Year | Pages Concerned | |
| Japanese Journal of Applied Physics | 38･4B | 1999 | 2626-2629 | |
| Author | Title of Article | |||
| Y. Yun | Highly Improved Electrical Properties of Diamond Metal-Insulator-Semiconductor Field-Effect-Transistor Prepared by Ultrahigh Vacuum Process | |||
| Journal | Volume | Year | Pages Concerned | |
| Japanese Journal of Applied Physics | 38･4B | 1999 | 2640-2645 | |
| Author | Title of Article | |||
| M. Shimomura | Crystallinity Evaluation of Phosphorus-Doped N-Type Diamond Thin Film | |||
| Journal | Volume | Year | Pages Concerned | |
| Journal of Applied Physics | 85･7 | 1999 | 3931-3933 | |
| Author | Title of Article | |||
| N. Jiang | Electrical Properties of Surface Conductive Layers of Homoepitaxial Diamond Films | |||
| Journal | Volume | Year | Pages Concerned | |
| Journal of Applied Physics | 85･12 | 1999 | 8267-8273 | |
| Author | Title of Article | |||
| T. Ito | Electron Emission from Diamond Surfaces | |||
| Journal | Volume | Year | Pages Concerned | |
| Journal of the Surface Finishing Society of Japan | 50･6 | 1999 | 16-21 | |
| Author | Title of Article | |||
| H. M. Jeon | Effect of Oxygen Component in Magnet-Active Microwave CH4/He Plasma on Large-Area Diamond Nucleation over Si | |||
| Journal | Volume | Year | Pages Concerned | |
| Japanese Journal of Applied Physics | 38 | 1999 | 4500-4503 | |
| Author | Title of Article | |||
| C. L. Wang | Fabrication of Ohmic Contacts to Buried Diamond Layers Using Pt Layer in the Diamond Chemical-Vapor-Deposition Process | |||
| Journal | Volume | Year | Pages Concerned | |
| Applied Physics Letters | 75 | 1999 | 1920-1922 | |
| Author | Title of Article | |||
| T. Sumitomo | Fabrication of Diamond Films by Microwave Plasma CVD at Low Hydrogen Concentration | |||
| Journal | Volume | Year | Pages Concerned | |
| Transactions of the Materials Research Society of Japan | 25･1 | 2000 | 305-308 | |
| Author | Title of Article | |||
| A. B. M. O. Islam | Interface Formation between GaS and CVD Diamond Films | |||
| Journal | Volume | Year | Pages Concerned | |
| Surface Science | 448 | 2000 | 1-10 | |
| Author | Title of Article | |||
| C. L. Wang | Chemical-Vapor-Deposited Diamond Overgrowth on Platinum Thin Films Deposited on Diamond Substrates | |||
| Journal | Volume | Year | Pages Concerned | |
| Japanese Journal of Applied Physics | 39･3A | 2000 | 1286-1290 | |
| Author | Title of Article | |||
| T. Ito | Properties of Electron Emitting Diode Fabricated with Single-Crystalline Diamond | |||
| Journal | Volume | Year | Pages Concerned | |
| Material Research Society Symposium Proceedings | 558 | 2000 | 105-110 | |
| Author | Title of Article | |||
| H. Kawamura | Fabrication of Planar Diamond Electron Emitters for Flat Panel Displays | |||
| Journal | Volume | Year | Pages Concerned | |
| Material Research Society Symposium Proceedings | 558 | 2000 | 155-160 | |
| Author | Title of Article | |||
| T. Maki | Electronic Properties of Diamond Thin Film for Planar Diamond Electron Emitter Applications | |||
| Journal | Volume | Year | Pages Concerned | |
| Applied Surface Science | 159-160 | 2000 | 583-587 | |
| Author | Title of Article | |||
| A. B. M. O. Islam | Characterization of GaS-Deposited CVD Diamond Films by AES & XPS | |||
| Journal | Volume | Year | Pages Concerned | |
| Applied Surface Science | 159-160 | 2000 | 588-593 | |
| Author | Title of Article | |||
| T. Maki | X-Ray Photoelectron Spectroscopy Characterization of Diamond Thin Film Surfaces for Electronic Device Application | |||
| Journal | Volume | Year | Pages Concerned | |
| Japanese Journal of Applied Physics | 39･6B | 2000 | L575-L578 | |
| Author | Title of Article | |||
| M. Yokoyama | Dependence of the Electron Affinity of Homoepitaxially Grown CVD Diamond on the Amount of Surface Oxygen | |||
| Journal | Volume | Year | Pages Concerned | |
| Applied Surface Science | 162-163 | 2000 | 457-463 | |
| Author | Title of Article | |||
| A. Ito | Improved Stability of Metal-Insulator-Diamond Semiconductor Interface by Employing CaF2/Thin BaF2 Composite Insulator Film | |||
| Journal | Volume | Year | Pages Concerned | |
| Japanese Journal of Applied Physics | 39･8 | 2000 | 4755-4756 | |
| Author | Title of Article | |||
| T. Ito | Highly Efficient Electron Emitting Diode Fabricated with Single-Crystalline Diamond | |||
| Journal | Volume | Year | Pages Concerned | |
| Diamond and Related Materials | 9 | 2000 | 1561-1568 | |
| Author | Title of Article | |||
| C. L. Wang | Growth and Characterization of Hillock-Free High Quality Homoepitaxial Diamond Films | |||
| Journal | Volume | Year | Pages Concerned | |
| Diamond and Related Materials | 9 | 2000 | 1650-1654 | |
| Author | Title of Article | |||
| T. Kita | Optical Characterization of Synthetic Diamond Films | |||
| Journal | Volume | Year | Pages Concerned | |
| Proceedings of the International Sosiety for Optical Engneering | 4086 | 2000 | 535-539 | |
| Author | Title of Article | |||
| H. M. Jeon | Nucleation-Enhancing Treatment for Diamond Growth over a Large Area Using Magnetoactive Microwave Plasma Chemical Vapor Deposition | |||
| Journal | Volume | Year | Pages Concerned | |
| Journal of Applied Physics | 88･5 | 2000 | 2979-2983 | |
| Author | Title of Article | |||
| T. Hosomi | Enhanced Diamond Film Growth by Xe-Added Microwave Plasma CVD | |||
| Journal | Volume | Year | Pages Concerned | |
| Thin Solid Films | 368 | 2000 | 269-274 | |
| Author | Title of Article | |||
| S. Kono | Surface Order Evaluation of the Heteroepitaxial Diamond Film Grown on an Inclined β-SiC(001) | |||
| Journal | Volume | Year | Pages Concerned | |
| Japanese Journal of Applied Physics | 39 | 2000 | 4372-4373 | |
| Author | Title of Article | |||
| C. L. Wang | High-Quality Homoepitaxial Diamond Films Grown at Normal Deposition Rates | |||
| Journal | Volume | Year | Pages Concerned | |
| Japanese Journal of Applied Physics | 40･3A | 2001 | L212-L214 | |
| Author | Title of Article | |||
| S. Kono | UHV μ-Electron Evaluation of the CVD Diamond Particles Grown on Si(001) | |||
| Journal | Volume | Year | Pages Concerned | |
| Diamond and Related Materials | 10 | 2001 | 48-58 | |
| Author | Title of Article | |||
| S. Endo | Recovery Treatments for Ion-Induced Defects in High Quality Homoepitaxial CVD Diamond | |||
| Journal | Volume | Year | Pages Concerned | |
| Diamond and Related Materials | 10 | 2001 | 322-326 | |
| Author | Title of Article | |||
| S. Kono | Secondary-Electron and Field-Emission Spectroscopy / Microscopy Studies of CVD Grown Diamond Particles | |||
| Journal | Volume | Year | Pages Concerned | |
| Surface Science | 2001 | in press | ||
| Author | Title of Article | |||
| B. S. Satyanarayana | Filed Emission from Heterostrustured Cathodes Made of Nanoseeded Diamond and Nanodlustered Carbon | |||
| Journal | Volume | Year | Pages Concerned | |
| Materials Research Society Symposium Proceedings | 621 | 2001 | in press | |
| Author | Title of Article | |||
| H. Murakami | Photoemission Properties and Surface Structure of Homoepitaxially Grown CVD Diamond (100) Surfaces | |||
| Journal | Volume | Year | Pages Concerned | |
| Applied Surface Science | 2001 | in press | ||
| Author | Title of Article | |||
| S. M. Lee | Properties of Thin MgO Films Grown on Single-Crystalline CVD Diamond | |||
| Journal | Volume | Year | Pages Concerned | |
| Applied Surface Science | 2001 | in press | ||
| Author | Title of Article | |||
| A. Hiraki | Eletron-Emitter Fabricated at Low Temperature by Diamond-Nano-Seeding Technique | |||
| Journal | Volume | Year | Pages Concerned | |
| Applied Surface Science | 2001 | in press | ||
| Author | Title of Article | |||
| N. Jiang | Characterization of N-Doped Diamond Films by Transmission Electron Microscopy | |||
| Journal | Volume | Year | Pages Concerned | |
| Journal of Crystal Growth | 2001 | in press | ||
| Author | Title of Article | |||
| C. L. Wang | Boron-Doped Diamond Film Homoepitaxially Grown on High-quality Chemical-Vapor- Deposited Diamond (100) | |||
| Journal | Volume | Year | Pages Concerned | |
| Japanese Journal of Applied Physics | 2001 | in press | ||