Summary of Research Project Results Under the JSPS FY2000
"Research for the future Program"



1.Research Institution Nagoya University
 
2.University-Industry Cooperative Research Committee 131st Committee on Thin Films
 
3.Term of Project FY1996〜FY2000
 
4.Project Number 96R13101
 
5.Title of Project Development of Thin Films for Future ULSI's and Nano-Scale Process Integration

6.Projetct Leader
Name Institution,Department Title of Position
Yukio Yasuda Nagoya University, Graduate School of Engineering Professor

7.Core Members

Names Institution,Department Title of Position
Shigeaki Zaima Nagoya University, Center of Cooperative Research in Advanced Science and Technology Professor
Nobuo Tanaka Nagoya University, Graduate School of Engineering Professor
Masaru Hori Nagoya University, Graduate School of Engineering Associate Professor

8.Cooperating Researchers

Names Institution,Department Title of Position
Masanori Okuyama Osaka University, Graduate School of Engineering Science Professor
Murota Junichi Tohoku University, Research Institute of Electrical Communication Professor
Hiroshi Iwai Tokyo Institute of Technology, Interdisciplinary Graduate School of Science and Engineering Professor

9.Summary of Research Results

We have developed appropriate and promising technologies of thin-film materials, elemental fabrication processes, and nano-scale device structures, all of which are expected to be used for the next generation ULSI devices, on the basis of the total integration of the ULSI fabrication process. The obtained results and conclusions are summarized as follows.
1. Application of SiGe interlayers and CoSi2 epitaxial films to form shallow junctions with very low contact-resistivity has been proposed.
2. A damascene process to fabricate metal gate electrodes has been developed.
3. Degradation mechanisms of ultra thin SiO2 gate dielectric films have been clarified and high-k materials used for the next generation ULSI's gate oxides have been explored.
4. Atomic-layer-controlled epitaxy/etching processes for SiGe(C) alloys and a novel method to form high-quality strain-relaxed SiGe buffer layers have been developed for high-mobility Si devices.
5. MFIS structures with SBT thin films have been proposed to realize high performance memory devices.
6. Al-CVD wiring processes with DMAH have been studied for their practical use and damascene Cu and low-k dielectrics module has been demonstrated at 130-nm node.
7. Ecological dry etching processes based on a plasma etching with a solid source have been developed.
8. An in situ monitoring method for hydrogen which plays a critical role in thin film evolution and direct observation technique of atomic structure in semiconductor materials have been developed.
9. Materials design of organic films for the development of ultra low-k films and non-PFC processes has been performed.

10.Key Words

(1)nano-scale device structures、(2)total integration、(3)low contact-resistivity
(4)gate dielectric films、(5)high-k materials、(6)SiGe(C) alloys
(7)MFIS structures、(8)etching processes、(9)low-k films

11.References

[Reference Articles]
Author Title of Article
Y. Hayashi Application of a two-step growth to the formation of epitaxial CoSi2 films on Si(001) surfaces: Comparative study using reactive deposition epitaxy
Journal Volume Year Pages Concerned
Jpn. J. Appl. Phys. 40 2001 269-275

Author Title of Article
K. Ohmori Trap generation in ultrathin SiO2 films due to electron injection studied by scanning tunneling microscopy/scanning tunneling spectroscopy
Journal Volume Year Pages Concerned
Appl. Surf. Sci. 162-163 2000 395-400

Author Title of Article
M. Wasekura A study on initial oxidation of Si(100)-2x 1 surfaces by coaxial impact collision ion scattering spectroscopy (CAICISS)
Journal Volume Year Pages Concerned
Appl. Surf. Sci. 159-160 2000 35-40

Author Title of Article
O. Nakatsuka Dependence of contact resistivity on impurity concentration in Co/Si systems
Journal Volume Year Pages Concerned
Appl. Surf. Sci. 159-160 2000 149-153

Author Title of Article
H. Kageshima Selectivity for O adsorption position on dihydride Si(100) surfaces
Journal Volume Year Pages Concerned
Appl. Surf. Sci. 159-160 2000 14-18

Author Title of Article
H. Fujita Orientation dependence of ferroelectric properties of Pb(Zrx Ti1-x)O3 thin films on Pt/SiO2/Si substrates
Journal Volume Year Pages Concerned
Appl. Surf. Sci. 159-160 2000 134-137

Author Title of Article
S. Zaima Low resistivity contact materials for ULSI applictions and metal/silicon interfaces
Journal Volume Year Pages Concerned
Ext. Abst. 19th Electronic Symp. Izu-Nagaoka2   2000 3-6

Author Title of Article
H. Fujita Control of crystal structure and ferroelectric properties of Pb(Zrx Ti1-x)O3 films formed by pulsed laser deposition
Journal Volume Year Pages Concerned
Jpn. J. Appl. Phys. 39 2000 7035-7039

Author Title of Article
K. Ohmori, The origin and the creation mechanism of positive charges in silicon oxide films
Journal Volume Year Pages Concerned
Proc. of the 4th Int. Symp. on the Physics and Chemistry of SiO2 and the Si-SiO2 interface   2000 345-352

Author Title of Article
Y. Yasuda Interfacial reactions of Ti/ and Zr/Si1-xGex/Si contacts with rapid thermal annealing
Journal Volume Year Pages Concerned
Thin Solid Films 373 2000 73-78

Author Title of Article
D. Matsushita Scanning tunneling microscopy/scanning tunneling spectroscopy of initial nitridation process of Si(100)-2x1 surfaces
Journal Volume Year Pages Concerned
Thin Solid Films 369 2000 293-296

Author Title of Article
K. Sato, A study on the local bonding structures of oxidized Si(111) surfaces by HREELS
Journal Volume Year Pages Concerned
Thin Solid Films 369 2000 277-280

Author Title of Article
M. Okada Epitaxial growth of heavily B-doped SiGe films and interfacial reaciton of Ti/B-doped SiGe bilayer structure using rapid thermal processing
Journal Volume Year Pages Concerned
Thin Solid Films 369 2000 130-133

Author Title of Article
I. Suzumura Nucleation and growth of Ge on Si(111) in solid phase epitaxy
Journal Volume Year Pages Concerned
Thin Solid Films 369 2000 116-120

Author Title of Article
H. Iwano Effect of Ge atoms on interfacial reactions of Ti/ and Zr/Si1-xGex/Si contacts
Journal Volume Year Pages Concerned
Advanced Metallization and Interconnect Systems for ULSI Applications in 1998   1999 599-604

Author Title of Article
O. Nakatsuka, Formation and electrical properties of Co/Si contacts by rapid thermal annealing
Journal Volume Year Pages Concerned
Advanced Metallization and Interconnect Systems for ULSI Applications in 1998   1999 605-611

Author Title of Article
H. Ikeda Influences of impurities on oxidation processes of Si(100) substrates
Journal Volume Year Pages Concerned
Jpn. J. Appl. Phys. 38 1999 2345-2348

Author Title of Article
H. Ikeda Initial oxidation processes of H-terminated Si(100) surfaces analyzed using a random sequential adsorption model
Journal Volume Year Pages Concerned
Jpn. J. Appl. Phys. 38 1999 3422-3425

Author Title of Article
Y. Hayashi Solid-phase epitaxial growth of CoSi2 on clean and oxygen-adsorbed Si(001) surfaces
Journal Volume Year Pages Concerned
Surf. Sci. 438 1999 116-122

Author Title of Article
Y. Hayashi Effects of initial surface states on formation porcesses of epitaxial CoSi2(100) on Si(100)
Journal Volume Year Pages Concerned
Thin Solid Films 343/344 1999 562-566

Author Title of Article
H. Ikeda Influences of deuterium atoms on local bonding structures of SiO2 studied by HREELS
Journal Volume Year Pages Concerned
Thin Solid Films 343/344 1999 408-411

Author Title of Article
M. Okada Hydrogen Effect on Heteroepitaxial Growth of Ge Films on Si(111) Surfaces by Solid Phase Epitaxy"
Journal Volume Year Pages Concerned
Jpn. J. Appl. Phys., part 1 37 1998 6970-6973

Author Title of Article
H. Iwano Effect of Ge atoms on interfacial reaction of Ti/ and Zr/Si1-xGex/Si contacts
Journal Volume Year Pages Concerned
Adv. Metallization Conference in 1998   1999 599-604

Author Title of Article
O. Nakatsuka Contact resistivities and electrical characteristics of Co/Si contacts by rapid thermal annealing
Journal Volume Year Pages Concerned
Adv. Metallization Conference in 1998   1999 605-611

Author Title of Article
M. Okada Nucleation and growth of Ge on Si(111) by MBE with additional atomic hydrogen irradiation studied by scanning tunneling microscopy
Journal Volume Year Pages Concerned
J. Cryst. Growth 188 1998 119-124

Author Title of Article
A. Muto Effects of H-termination on Ge film growth on Si(111) surfacesby solid phase epitaxy
Journal Volume Year Pages Concerned
Appl. Surf. Sci. 130-132 1998 321-326

Author Title of Article
Y. Nakagawa Local bonding structure of SiO2 Films on H-terminated Si(100)surfaces studied by using high-resolution electron energy lossspectroscopy
Journal Volume Year Pages Concerned
Appl. Surf. Sci. 130-132 1998 192-196

Author Title of Article
Y. Yasuda Effects of atomic hydrogen on growth behavior of Si filmsby Si2H6-source molecular beam epitaxy
Journal Volume Year Pages Concerned
Thin Solid Films 317 1998 48-51

Author Title of Article
H. Iwano Hopping conduction and localized states in p-Si wiresformed by focused ion beam implantations
Journal Volume Year Pages Concerned
J. Vac. Sci. Technol. B16 1998 2551-2554

Author Title of Article
H. Iwano Surface roughness of strain-relaxed Si1-xGex layers grown bytwo-step growth method
Journal Volume Year Pages Concerned
Thin Solid Films 317 1998 17-20

Author Title of Article
H. Iwano Electrical properties and interfacial reactions at Co/Si(100) contacts
Journal Volume Year Pages Concerned
Mat. Res. Soc. Symp. Proc.   1998 669-675

Author Title of Article
Y. Hayashi A new growth method of epitaxial cobalt disilicide on Si(100)
Journal Volume Year Pages Concerned
Mat. Res. Soc. Symp. Proc.   1998 663-668

Author Title of Article
S. Zaima Study of reaction and electrical properties at Ti/SiGe/Si(100) contacts for ultralarge scale integrated applications
Journal Volume Year Pages Concerned
J. Vac. Sci. Technol. B16 1998 2623-2628

Author Title of Article
K. Sakata Quantum chemical study of the oxidation sites in hydrogen- and water- terminated Si dimers: Attempt to understand the Si-Si back-bond oxidation on the Si surface
Journal Volume Year Pages Concerned
Jpn. J. Appl. Phys 37 1998 4962-4973

Author Title of Article
H. Ikegami Thermal stability of ultra-thin CoSi2 films on Si(100)-2x 1 surfaces
Journal Volume Year Pages Concerned
Appl. Surf. Sci. 117/118 1997 257-279

Author Title of Article
K. Ohmori, Initial oxidation of Si(100)-(2x1)H monohydride surfaces studied by scanning tunneling microscopy/scanning tunneling spectroscopy
Journal Volume Year Pages Concerned
Appl. Surf. Sci. 117/118 1997 114-118

Author Title of Article
H. Ikeda Initial oxidation of H-terminated Si(111) surfaces studied by HREELS
Journal Volume Year Pages Concerned
Appl. Surf. Sci. 117/118 1997 109-113

Author Title of Article
Y. Yasuda Efects of H-termination on initial oxidation process
Journal Volume Year Pages Concerned
Appl. Surf. Sci. 113/114 1997 579-584

Author Title of Article
M. Okada The influence of additional atomic hydrogen on the monolayer growth of Ge on Si(100) studied by STM
Journal Volume Year Pages Concerned
Appl. Surf. Sci. 113/114 1997 349-353

Author Title of Article
M. Okada Hydrogen effects on Si1-xGex/Si heteroepitaxial growth by Si2H6- and GeH4-source molecular beam epitaxy
Journal Volume Year Pages Concerned
Jpn. J. Appl. Phys. 36 1997 7665-7668

Author Title of Article
H. Kondo Conductance oscillations in hopping conduction systems fabricated by focused ion beam implantation
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Jpn. J. Appl. Phys. 36 1997 4046-4048

Author Title of Article
H. Ikegami Study on CoSi2 formation on Si(100)-2x1 surfaces by scanning tunneling microscopy and scanning tunneling spectroscopy
Journal Volume Year Pages Concerned
Proc. of Advanced Metallization and Interconnect Systems for ULSI Applications in 1995   1996 511-516

Author Title of Article
H. Ikeda Initial oxidation processes of H-terminated Si(100) surfaces studied by high-resolution electron energy loss spectroscopy
Journal Volume Year Pages Concerned
Jpn. J. Appl. Phys. 35 1996 1069-1072

Author Title of Article
H. Ikeda Initial oxidation of Si(311) surfaces studied by HREELS
Journal Volume Year Pages Concerned
Appl. Surf. Sci. 100/101 1996 431-435

Author Title of Article
H. Iwano Novel method of strain-relaxed Si1-xGex growth on Si(100) by MBE
Journal Volume Year Pages Concerned
Appl. Surf. Sci. 100/101 1996 487-490

Author Title of Article
H. Shinoda Electrical properties of metal/SiGe/Si(100) heterojunctions
Journal Volume Year Pages Concerned
Appl. Surf. Sci.   1996 526-529

Author Title of Article
H. Ikegami Oxide formation on Si(100)-2x1 surfaces studied by scanning tunneling microscopy/ scanning tunneling spectroscopy
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Jpn. J. Appl. Phys. 35 1996 1593-1597

Author Title of Article
J. Kojima Formation of defects by silicidation reaction at Ti/Si interfaces
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Proc. of Advanced Metallization and Interconnect Systems for ULSI Applications in 1995   1996 517-522

Author Title of Article
H. Ikeda Influences of hydrogen on initial oxidation processes of H-terminated Si(100) surfaces
Journal Volume Year Pages Concerned
Appl. Surf. Sci. 104/105 1996 354-358

Author Title of Article
S. Zaima Studies on the suppression of Ge segregation during Si overgrowth on Ge(n ML)/Si(100) substrates by gas-source MBE
Journal Volume Year Pages Concerned
J. Crystal Growth 163 1996 105-112

Author Title of Article
J. J. Hu Beam alignment and related problems of spherical aberration corrected high-resolution TEM images
Journal Volume Year Pages Concerned
J. Electron Microscopy 49 2000 651-656

Author Title of Article
N. Tanaka Time-resolved HRTEM and HAADF-STEM of metal-mediated crystallization of amorphous germanium films
Journal Volume Year Pages Concerned
Material Science Eng., A, (in print)      

Author Title of Article
N. Tanaka HAADF-STEM of partially ordered Ni-19. 5at%Mo alloys
Journal Volume Year Pages Concerned
J. Physique, IV, France 10 2000 85-90

Author Title of Article
N. Baba An auto-tuning method of focusing and astigmatism correction for the HAADF-STEM based on image-contrast transfer function
Journal Volume Year Pages Concerned
J. Electron Microscopy, (in print) 50 2000  

Author Title of Article
M. Koguchi Three-dimensional STEM for observing Nano-structures
Journal Volume Year Pages Concerned
J. Electron Microscopy, (in print) 50 2000  

Author Title of Article
N. Tanaka STM/STS studies of tungsten clusters on Si(111) surfaces using a newly developed deposition apparatus
Journal Volume Year Pages Concerned
Micron 30 1999 135-139

Author Title of Article
N. Tanaka An on-line correction method of defocus and astigmatism in HAADF- STEM
Journal Volume Year Pages Concerned
Ultramicrosc. 78 1999 103-110

Author Title of Article
N. Tanaka Time-resolved HREM of Metal-mediated crystallization of amorphous Ge films
Journal Volume Year Pages Concerned
Proc. of Int. Conf. on Solid-Solid Phase Transformations'99      

Author Title of Article
J. J. Hu A study of the validity of the image deconvolution method on the basis of channeling theory for thicker crystals
Journal Volume Year Pages Concerned
Ultramicrosc 80 1999 1-5

Author Title of Article
J. J. Hu Direct atomic observation of Ge/Si(001) interfaces by image processing methods in high-resolution electron microscopy
Journal Volume Year Pages Concerned
J. Electron Microscopy 47 1998 581

Author Title of Article
N. Tanaka Theoretical basis of image-deconvolution methods for structure images of thin crystals
Journal Volume Year Pages Concerned
J. Electron Micoroscopy 47 1998 217

Author Title of Article
J. J. Hu An approximate multi-beam form of the ellipse in high-resolution transmission electron microscopy
Journal Volume Year Pages Concerned
Ultramicroscopy 74 1998 105

Author Title of Article
K. Nakamura Position dependence of the visibility of a single gold atom in silicon crystals in HAADFSTEM image simulation
Journal Volume Year Pages Concerned
Journal of Electron Microscopy 1 1997 33-43

Author Title of Article
N. Tanaka HREM and measurement of magnetic properties of Fe- clusters embedded in MgO Films
Journal Volume Year Pages Concerned
Mat. Sci. and Eng. A217/218 1996 311-318

Author Title of Article
K. Fuijita Amorphous silicon and tungsten etching employing environmentally benign plasma process
Journal Volume Year Pages Concerned
Jpn. J. Appl. Phys 40 2001 832-836

Author Title of Article
H. Ohta Formation of silicon nitride gate dielectric films at 300℃ employing radical chemical vapor deposition
Journal Volume Year Pages Concerned
J. Vac. Sci. Technol. B18 2000 2486-2490

Author Title of Article
H. Ohta Effect ofions and radicals on formation of silicon nitride gate dielectric film using plasma chemical vapor deposition
Journal Volume Year Pages Concerned
J. Appl. Phys., (in press) 89 2001  

Author Title of Article
M. Nakamura Behaviors of gas species in low global warming potential gas plasmas for low dielectric constant film formation
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J. Vac. Sci. Technol., (submitted) B19 2001  

Author Title of Article
K. Fujita Novel process for SiO2/Si selective etching using a novel gas source for preventing global warming
Journal Volume Year Pages Concerned
J. Vac. Sci. Technol. B17 1999 957-960

Author Title of Article
K. Fujita Silicon oxide selective etching process keeping harmony with environment by using radical injection technique
Journal Volume Year Pages Concerned
J. Vac. Sci. Technol. A17 1999 3260-3264

Author Title of Article
K. Fujita Environmentally harmonious etching process for cleaning amorphous silicon and tungsten in chemical vapor deposition chamber
Journal Volume Year Pages Concerned
Materials Science in Semiconductor Processing 2 1999 219-223

Author Title of Article
K. Teii Study on polymeric neutral species in high-density fluorocarbon plasmas
Journal Volume Year Pages Concerned
J. Vac. Sci. Technol. A18 2000 1-9

Author Title of Article
M. Inayoshi Surface reaction of CF2 radicals for fluorocarbon film formation in SiO2/Si selective etching process
Journal Volume Year Pages Concerned
J. Vac. Sci. Technol. A16 1998 233-238

Author Title of Article
A. A. Saranin Composition and surface structure of quantum chains on a In/Si(111) surface
Journal Volume Year Pages Concerned
Jpn. J. Appl. Phys. 39 2000 L306-L308

Author Title of Article
T. Fujino Ge thin film growth on Si(111) using hydrogen surfactant
Journal Volume Year Pages Concerned
Thin Solid Films 369 2000 25-28

Author Title of Article
T. Fujino Structural analysis of the 6H-SiC(0001)-√3x√3 reconstructed surface
Journal Volume Year Pages Concerned
Jpn. J. Appl. Phys. 39 2000 6410-6412

Author Title of Article
T. Fujino Ion scattering and recoiling spectroscopy for real time monitoring of surface processes in a Gas phase atomosphere
Journal Volume Year Pages Concerned
Surf. Rev. Lett. 7 2000 657-659

Author Title of Article
M. Katayama Coaxial impact-collision ion scattering spectroscopy and time-of-flight elastic recoil detection analysis for in-situ monitoring of surface processes in Gas phase atmoshere
Journal Volume Year Pages Concerned
submitted to Jpn. J. Appl. Phys.      

Author Title of Article
T. Fuse Total cross-section of electron stimulated desorption of hydrogen from hydrogen-terminated Ge/Si(001) as observed by time-of-flight elastic recoil detection analysis
Journal Volume Year Pages Concerned
Jpn. J. Appl. Phys. 38 1999 2878-2880

Author Title of Article
J. -T. Ryu Adsorption of atomic hydrogen on the Si(001)4x3-In surface studied by coaxial impact collision ion scattering spectroscopy and scanning tunneling microscopy
Journal Volume Year Pages Concerned
J. Vac. Sci. Technol. B17 1999 983-988

Author Title of Article
T. Fuse In situ observation of Ge δ -layer in Si(001) using quasi medium energy ion scattering spectroscopy
Journal Volume Year Pages Concerned
Materials Science in Semiconductor Processing 2 1999 159-164

Author Title of Article
J. -T. Ryu The growth of indium thin films on clean and H-terminated Si(100) surfaces
Journal Volume Year Pages Concerned
Surf. Sci. 433-435 1999 575-580

Author Title of Article
T. Fuse Quasi-medium energy ion scattering spectroscopy observation of a Ge δ -doped layer fabricated by hydrogen mediated epitaxy
Journal Volume Year Pages Concerned
Jpn. J. Appl. Phys. 37 1998 2625-2628

Author Title of Article
J. -T. Ryu The effect of hydrogen termination on in growth on Si(100) surface
Journal Volume Year Pages Concerned
Surf. Sci. 401 1998 L425-L431

Author Title of Article
T. Fuse Observation of behavior of Ge δ -doped layer in Si(001)
Journal Volume Year Pages Concerned
Nucl. Instrum. & Methods Phys. Res. B136-138 1998 1080-1085

Author Title of Article
J. -T. Ryu CAICISS studies of atomic-hydrogen-induced structural changes of the Sb terminated Si surfaces
Journal Volume Year Pages Concerned
Nucl. Instrum. & Methods Phys. Res. B136-138 1998 1102-1107

Author Title of Article
J. -T. Ryu Atomic hydrogen interaction with the Si(100)4x3-In surface studied by scanning tunneling microscopy
Journal Volume Year Pages Concerned
Jpn. J. Appl. Phys. 37 1998 3774-3777

Author Title of Article
M. Katayama Atomic-hydrogen-induced self-organization processes of the In/Si(111) surface phases studied by scanning tunneling microscopy
Journal Volume Year Pages Concerned
Appl. Surf. Sci. 130-132 1998 765-770

Author Title of Article
T. Fuse Electron stimulated desorption of hydrogen from H/Si(001)-1x1 surface studied by TOF-ERDA
Journal Volume Year Pages Concerned
Surf. Sci. 420 1999 81-86

Author Title of Article
J. -T. Ryu Adsorption of atomic hydrogen on the Si(100)-(2xl)-Sb surface
Journal Volume Year Pages Concerned
Jpn. J. Appl. Phys. 36 1997 4435-4439

Author Title of Article
J. -T. Ryu Atomic-hydrogen-induced structural change of the Si(100)-(2xl)-Sb surface studied by TOF-ICISS
Journal Volume Year Pages Concerned
Appl. Surf. Sci. 121/122 1997 223-227

Author Title of Article
T. Fuse Quasi-medium energy ion scattering spectroscopy study of Ge δ-layer on Si(001)
Journal Volume Year Pages Concerned
Appl. Surf. Sci. 121/122 1997 218-222

Author Title of Article
A. Saranin Structural transformations of the Si(111)2x2-In surface induced by STM tip and thermal annealing
Journal Volume Year Pages Concerned
Appl. Surf. Sci. 121/122 1997 183-186

Author Title of Article
A. Saranin STM observation of the atomic hydrogen adsoprption on the Si(111)4x1-In surface
Journal Volume Year Pages Concerned
Appl. Surf. Sci. 113/114 1997 354-359

Author Title of Article
A. Saranin STM tip-induced diffusion of In atoms on the Si(111)√3x√3-In surface
Journal Volume Year Pages Concerned
Phys. Rev. B56 1997 7449-7454

Author Title of Article
A. Saranin Structural model for the Si(111)-4x1-In reconstruction
Journal Volume Year Pages Concerned
Phys. Rev. B56 1997 1017-1020

Author Title of Article
T. Fus Quasimedium energy ion scattering spectroscopy observation of surface segregation of Ge δ-doped layer during Si molecular beam epitaxy
Journal Volume Year Pages Concerned
Surf. Sci. 393 1997 L93-L98

Author Title of Article
A. Saranin Structural transformation at room temperature adsorption of In on Si(111)√3x√3-In surface: LEED-AES-STM study
Journal Volume Year Pages Concerned
Surf. Sci. 388 1997 299-307

Author Title of Article
K. Oura Atomic-hydrogen-induced Ag cluster formation on Si(111)-√3x√3-Ag surface
Journal Volume Year Pages Concerned
J. Vac. Technol. B14 1996 988-991

Author Title of Article
Y. Tanaka Thin-film growth mode analysis by low energy ion scattering
Journal Volume Year Pages Concerned
Surf. Sci. 363 1996 161-165

Author Title of Article
K. Kawamoto Observation of the diffusion of Ag atoms through an a-Si layer on Si(111)by low energy ion scattering
Journal Volume Year Pages Concerned
Surf. Sci. 363 1996 156-160

Author Title of Article
H. Sugiyama An improvement in C-V characteristics of metal-ferroelectric-insulator-semiconductor structure for ferroelectric gate FET memory using a silicon nitride bufferlayer
Journal Volume Year Pages Concerned
Jpn. J. Appl. Phys. 39 2000 2131

Author Title of Article
M. Okuyama Low-temperature preparation of SrBi2Ta2O9 ferroelectric thin film by pulsed laser deposition and its application to metal-ferroelectric-insulator-semiconductor structure
Journal Volume Year Pages Concerned
Appl. Surf. Sci. 154-155 2000 411

Author Title of Article
Z. Wei Low-temperature crystallization of metal organic decomposition BaTiO3 thin film by hydrothermal annealing
Journal Volume Year Pages Concerned
Jpn. J. Appl. Phys. 39, 2000 4217

Author Title of Article
T. Nakaiso Low-temperature preparation of Sr2(Ta1-x, Nbx)2O7 thin films by pulsed laser deposition and its electrical properties
Journal Volume Year Pages Concerned
Jpn. J. Appl. Phys. 39 2000 5517

Author Title of Article
M. Noda Low temperature preparation of Sr2(Ta1-x, Nbx)2O7 ferroelectric thin film by pulsed laser depositio
Journal Volume Year Pages Concerned
Ferroelectric Thin Films VIII 596 2000 185-

Author Title of Article
T. Nakaiso Low-temperature preparation of ferroelectric Sr2(Ta1-x, Nbx)2O7 thin films by pulsed laser deposition and their application to metal-ferroelectric- insulator- semiconductor-FET
Journal Volume Year Pages Concerned
Jpn. J. Appl. Phys., (in press)      

Author Title of Article
M. Takahashi Analysis and improvement of retention time of memorized state of metal-ferroelectric-insulator semiconductor structure for ferroelectric Gate FET memory
Journal Volume Year Pages Concerned
Jpn. J. Appl. Phys., (in press)      

Author Title of Article
K. Hashimoto Detector pixel in dielectric bolometer mode based on ferroelectric thin film capacitors for uncooled infrared image sensor
Journal Volume Year Pages Concerned
Transactions of the Institute of Electrical Engineers of Japan 120-E 2000 15-19

Author Title of Article
M. Noda A low temperature preparation of Sr0.7Bi2+xTa2O9 thin films on SiO2/Si by pulsed laser deposition for application of metal-ferroelectric-insulator-semiconductor structure
Journal Volume Year Pages Concerned
Ferroelectric Letters. 26 1999 17-28

Author Title of Article
M. Noda A fatigue-tolerant metal-ferroelectric-oxide-semiconductor structure with large memory window using Sr-deficient and Bi-excess Sr0.7Bi2+yTa2O9 ferroelectric films prepared on SiO0.7Bi2+xTa2O9 /Si at low temperature by pulsed laser deposition method
Journal Volume Year Pages Concerned
Jpn. J. Appl. Phys. 38 1999 2275-2280

Author Title of Article
M. Noda "A new type of dielectric bolometer mode of detector pixel using ferroelectric thin film capacitors for infrared image sensor
Journal Volume Year Pages Concerned
Sensors and Actuators A77 1999 39-44

Author Title of Article
M. Noda "A new type of dielectric bolometer mode of infrared detector using ferroelectric thin film capacitors for uncooled focal plane arrays
Journal Volume Year Pages Concerned
SPIE Opto-Electronics Review, Special Issues on Infrared Focal Plane Arrays 7 1999 313-320

Author Title of Article
M. Okuyama A low temperature preparation of ferroelectric SrxBi2+yTa2O9 thin film and its application to metal-ferroelectric-insulator-semiconductor structure
Journal Volume Year Pages Concerned
Materials Science in Semiconductor Processing 2 1999 239-245

Author Title of Article
M. Noda A study on metal-ferroelectric-oxide-semiconductor structure with thin silicon oxide film using SrBi2Ta2O9 ferroelectric films prepared by pulsed laser deposition
Journal Volume Year Pages Concerned
Jpn. J. Appl. Phys. 38 1999 5432-5436

Author Title of Article
M. Okuyama Preparation of Sr0.7Bi2+xTa2O9 thin films on SiO2/Si at low temperature by pulsed laser deposition and fatigue-tolerant C-V characteristics with large memory window
Journal Volume Year Pages Concerned
Mat. Res. Soc. Symp. Proc. 541 1999 299-304

Author Title of Article
Z. Song Variation of the microstructure and morphology with oxygen pressure in Ba0.51Sr0.48La0.01Nb2O6 thin films prepared by pulsed laser deposition
Journal Volume Year Pages Concerned
Materials Letters 40 1999 83-90

Author Title of Article
D. Ricinschi Theoretical analysis of fatigue in PZT ceramics on the basis of landau theory
Journal Volume Year Pages Concerned
Journal of Korean Physical Society 35 1999 S1313-S1317

Author Title of Article
T. Kanashima Analyses of high frequency capacitance-voltage characteristics of metal-ferroelectrics-insulator-silicon structure
Journal Volume Year Pages Concerned
Jpn. J. Appl. Phys. 38 1999 2044-2048

Author Title of Article
M. Okuyama Stabilization of electron emission from PZT by MgO coatings
Journal Volume Year Pages Concerned
Journal of the Korean Physical Society 35 1999 S1525-S1528

Author Title of Article
D. Ricinschi Analysis of ferroelectric switching in finite media as a landau-type phase transition
Journal Volume Year Pages Concerned
J. of Phys. : Condensed Matter 10 1998 477-492

Author Title of Article
D. Ricinschi Grain size-dependent switching in barium titanate ferroelectric ceramics analyzed by means of their landau coefficient
Journal Volume Year Pages Concerned
6th Japan-CIS/Baltic Symposium on Ferroelectricity   1998  

Author Title of Article
V. Tura Investigation of grain-size influence on the ferroelectric- to-paraelectric phase transition in BaTiO3 ceramics by means of AC calorimetry
Journal Volume Year Pages Concerned
Jpn. J. Appl. Phys. 37 1998 1950-1954

Author Title of Article
M. Okuyama Basic characteristics of SrBi2Ta2O9/SiO2/Si structure
Journal Volume Year Pages Concerned
J. Korean Phys. Soc. 32 1998 S1357-1360

Author Title of Article
Y. Matsumuro Low-temperature preparation of PMN-PT films with high-dielectric constant by laser ablation
Journal Volume Year Pages Concerned
J. Korean Phys. Soc. 32 1998 S1625-1628

Author Title of Article
Y. Oishi Crystalline and electrical properties of SrBi2Ta2O9 thin films prepared by laser ablation
Journal Volume Year Pages Concerned
6th Japan-CIS/Baltic Symposium on Ferroelectricity 3175 1998 290-294

Author Title of Article
H. Xu Oriented Sr0.48Ba0.51La0.001Nb2O6 thin films prepared on Pt/Ti/SiO2/Si(100) substrate by pulsed laser deposition
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6th Japan-CIS/Baltic Symposium on Ferroelectricity   1998  

Author Title of Article
W. Xu Mild hydrothermal synthesis of titanate films: from polycrystalline BaTiO3 to epitaxial PbTiO3
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Philosophical Magazine B77 1998 177-185

Author Title of Article
M. Okuyama Dielectric property of ferroelectric-insulator-semiconductor junction
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Appl. Surf. Sci. 117/118 1997 406-412

Author Title of Article
Y. Oishi Preparation and basic properties of SrBi2Ta2O9 films
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Jpn. J. Appl. Phys. 36 1997 5896-5899

Author Title of Article
V. Tura Simulation of switching properties of ferrodlectrics on the basis of dipole lattice model
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Jpn. J. Appl. Phys. 36 1997 2183-2191

Author Title of Article
L. Zheng Leakage behavior and distortion of the hysteresis loop in ferroelectric thin films
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Science in China (Series E) 40 1997 126-134

Author Title of Article
D. Ricinschi Analysis of ferroelectric switching in finite media as a landau-type phase transition
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J. Phys. Condense Matter 10 1998 477-492

Author Title of Article
T. Kanashima Analysis of Si-H, Si-O-H and Si-O-O-H defects in SiO2 thin films by molecular orbital method
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Jpn. J. Appl. Phys. 36 1997 1448-1452

Author Title of Article
T. Kanashima Characterization of F2 treatment effects on Si(100) surface and Si(100)/SiO2 interface
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Jpn. J. Appl. Phys. 36 1997 2460-2463

Author Title of Article
H. Yamamoto Surface treatment effects on microscopic Si surface structure and Si-SiO2 interface state
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Appl. Surf. Sci. 113/114, 1997 664-669

Author Title of Article
T. Imai Surface characterization using infrared reflection absorption spectroscopy on Si(100) processed by wet cleaning and gas treatment
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Appl, Surf. Sci. 113/114 1997 398-402

Author Title of Article
W. Xu Formation of BaTiO3 and PbTiO3 thin films under mild hydrothermal conditions
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J. Mater. Res.   1996  

Author Title of Article
W. Wu Bismuth titanate thin films on Si with buffer layers prepared by laser ablation and their electrical properties
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Jpn. J. Appl. Phys. 35 1996 1560-1563

Author Title of Article
M. Okuyama Electron emission from ferroelectric ceramic thin plate by pulsed electric field
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Journal of the Korean Physical Society 29 1996 S607-S611

Author Title of Article
Y. Kuratani Field-Excited electron emission from (1-y)Pb (Mg1/3Nb2/3)O3-yPbTiO3 ceramic
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Jpn. J. Appl. Phys. 35 1996 5185-5187

Author Title of Article
T. Kanashima Theoretical analysis of oxygen-excess defects in SiO2 thin film by molecular orbital method
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Jpn. J. Appl. Phys. 35 1996 1445-1449

Author Title of Article
T. Imai Surface characterization using infrared reflection absorption spectroscopy on Si(100) processed by wet cleaning and gas treatment
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Appl. Surf. Sci. 3981 1996  

Author Title of Article
H. Yamamoto Surface treatment effects on microscopic Si surface structure and Si-SiO2 interface state
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Appl. Surf. Sci.   1996 4049-

Author Title of Article
T. Imai Characterization of surface potential and strain at ultrathin oxide/silicon interface by photoreflectance spectroscopy
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Jpn. J. Appl. Phys. 35 1996 1073-1076

Author Title of Article
C. -H. Lee Crystallographic structures and parasitic resistances of self-aligned silicide TiSi2/self-aligned nitrided barrier layer/selective chemical vapor deposited aluminum in fully self-aligned metallization metal-oxide-semiconductor field-effect-transistor
Journal Volume Year Pages Concerned
Jpn. J. Appl. Phys. 38 1999 5835-5838

Author Title of Article
H. Matsuhashi Self-aligned 10-nm barrier layer formation technology for fully self-aligned metallization metal-oxide-semiconductor field-effect-transistor
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Jpn. J. Appl. Phys. 37 1998 3264-3267

Author Title of Article
H. Matsuhashi Mirror-like surface mor-phology of CVD-A1 on TiN by CIF3 pretreatment
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Proc. of Advanced Metallization and Interconnect Systems for ULSI Applications in 1995   1996 667-673

Author Title of Article
Y. Shimamune Atomic-layer adsorption of P on Si(100) and Ge(100) by PH3 using an ultraclean low-pressure chemical vapor deposition
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Appl. Surf. Sci. 162-163 2000 390-394

Author Title of Article
A. Ichikawa Epitaxial growth of Si1-x-yGexCy film on Si(100) in a SiH4-GeH4-CH3SiH3 reaction
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Thin Solid Films 369 2000 167-170

Author Title of Article
S. Kobayashi Segregation and diffusion of impurities from doped Si1-xGex films into silicon
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Thin Solid Films 369 2000 222-225

Author Title of Article
T. Tsuchiya Drain leakage current and instability of drain current in Si/Si1-xGex MOSFETs
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Thin Solid Films 369 2000 379-382

Author Title of Article
T. Noda Doping and electrical characteristics of in-situ heavily B-doped Si1-x-yGexCy films epitaxially grown using ultraclean LPCVD
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Thin Solid Films 380 2000 57-60

Author Title of Article
D. Lee Phosphorus doping in Si1-x-y GexCy Epitaxial Growth by low-pressure chemical vapor deposition using a SiH4-GeH4-CH3SiH3-PH3-H2 Gas system
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Jpn. J. Appl. Phys., (in press) 40    

Author Title of Article
T. Matsuura Atomic-order layer-by-layer role-share etching of silicon nitride using an electron cyclotron resonance plasma
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Appl. Phys. Lett. 74 1999 3573-3575

Author Title of Article
A. Izena Low-temperature reaction of CH4 on Si(100) surface
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J. Crystal Growth 188 1998 131-136

Author Title of Article
Y. Yamamoto Surface reaction of alternately supplied WF6 and SiH4 gases
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Surf. Sci. 408 1998 190-194

Author Title of Article
T. Watanabe Separation between surface adsorption and reaction of NH3 on Si(100) by flash heating
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Jpn. J. Appl. Phys. 38 1999 515-517

Author Title of Article
T. Sugiyama Atomic-layer etching of Ge using an ultraclean ECR plasma
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Appl. Surf. Sci. 112 1997 187-190

Author Title of Article
S. Kobayashi Initial growth characteristics of germanium on silicon in LPCVD using germane gas
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J. Crystal Growth 174, 1997 686-690

Author Title of Article
T. Watanabe Atomic-layer surface reaction of SiH4 on Ge(100)
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Jpn. J. Appl. Phys. 36 1997 4042-4045

Author Title of Article
D. K. Nayak High-mobility strained-Si PMOS FET's
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IEEE Trans. Electron Devices 43 1996 1709-1716

Author Title of Article
S. Miyazaki Influence of Nitrogen Incorporation in Ultrathin SiO2 on the Structure and Electronic States of the SiO2/Si(100) Interface
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Appl. Surf. Sci. 159-160 2000 75-82

Author Title of Article
W. Mizubayashi Soft breakdown mechanism in ultrathin gate oxides
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The Physics and Chemistry of SiO2 and the Si-SiO2 Interface 4, 2000 409-417

Author Title of Article
Khairurrijal, Calculation of subband states in a metal-oxide-semiconductor inversion layer with a realistic potential profile
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Jpn. J. Appl. Phys. 38 1999 1352-1355

Author Title of Article
S. Miyazaki Photoelectron yield spectroscopy of electronic states at ultrathin SiO2/Si interfaces
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Microelectronic Engineering 48 1999 63-66

Author Title of Article
S. Miyazaki Electronic defect states at ultrathin SiO2/Si interfaces from photoelectron yield spectroscopy
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Materials Science in Semiconductor Processing 2 1999 185-190

Author Title of Article
S. Miyazaki Evaluation of gap states in hydrogen-terminated silicon surfaces and ultrathin SiO2/Si interfaces by using photoelectron yield spectroscopy
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Mat. Res. Soc. Symp. Proc. 500 1998 81-86

Author Title of Article
M. Fukuda Analysis of tunnel current through ultrathin gate oxides
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Jpn. J. Appl. Phys. 37 1998 L1534-L1536

Author Title of Article
Khairurrijal Analytical modeling of metal oxide semiconductor inversion-layer capacitance
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Jpn. J. Appl. Phys. 38 1999 L30-L32

Author Title of Article
K. Morino Phosphorous incorporation in ultrathin gate oxides and its impact to the network structure
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Extended Abstracts of the 1997 International Conference on Solid State Devices and Materials   1997 18-19

Author Title of Article
H. Iwai Overview of the ULSI session and chapter
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International Journal of High Speed Electronics and Systems 10 2000 171-173

Author Title of Article
T. Ohguro Thermal stability of CoSi2 film for CMOS salicide
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IEEE Transactions on Electron Devices 47 2000 2208-2213

Author Title of Article
T. Ohguro Power Si-MOSFET operating with high efficiency under low supply voltage
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IEEE Transactions on Electron Devices 47 2000 2385-2391

Author Title of Article
J. -S. Goo An accurate and ef ficient high frequency noise simulation technique for deep submicron MOSFETs
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IEEE Transactions on Electron Devices 47 2000 2410-2419

Author Title of Article
H. S. Momose Hot-carrier reliability of ultra-thin gate oxide CMOS
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Solid-State Electronics 44 2000 2035-2044

Author Title of Article
H. Nii An 0.3-mm Si epitaxial base BiCMOS technology with 37-GHz fmax and 10-V BVceo for RF telecommunication
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IEEE Trans. Electron Devices 46 1999 712-721

Author Title of Article
T. Ohguro An 0.18- μ m CMOS for Mixed Digital and Analog Applications with Zero-Volt-Vth Epitaxial-Channel MOSFET's"
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IEEE Transactions on Electron Devices 46 1999 1378-1383

Author Title of Article
H. Iwai Outlook of MOS devices into next century
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Microelectronic Engineering 48 1999 7-14

Author Title of Article
T. Yoshitomi A high performance 0.15 μm buried channel pMOSFET with extremely shallow counter doped channel region using solid phase diffusion
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Solid State Technology 43 1999 1209-1214

Author Title of Article
T. Yoshitomi A study of self-aligned doped channel MOSFET structure for low power and low 1/f noise operation
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Solid State Electronics 43 1999 1219-1224

Author Title of Article
T. Ohguro Silicon Epitaxy and Its Application to RFIC's
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Electrochemical Society Proceedings 99-18 1999 123-141

Author Title of Article
T. Ohguro Ultra-shallow junction and salicide technology for advanced CMOS devices
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Proc. Symp. on ULSI Science and Technology   1997 275-295

Author Title of Article
S. Mukaigawa Measurement of copper drift in methylsilsesquiazane-methylsilsesquioxane dielectric films
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Jpn. J. Appl. Phys 39 2000 2189-2193

Author Title of Article
T. Ohba Current Status of 300mm/0.25-0.18um Technologies
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Proc. 5th Int. Conf. on Solid-State and Integrated Circuit Technol   1998 21-24

Author Title of Article
A. Tramoto Time-dependent dielectric breakdown of SiO2 films in a wide electric field range
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Microelectronics Reliability 41 2001 47-52

Author Title of Article
K. Kobayashi Origin of positive charge generated in thin SiO2 films during high-field electrical stress
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IEEE Trans. Electron Devices 46 1999 947-953

Author Title of Article
A. Nozoe A 256-Mb multilevel flash memory with 2-MB/s program rate for mass storage applications
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IEEE J. Solid-State Circuits 34 1999 1544-1550

Author Title of Article
K. Kobayashi Impact of thermal nitridation on electron and hole trap generation in silicon dioxides
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Int. Symp. on Advanced ULSI Tech. (ISAUT), Toyo Univ.   1998 31-34

Author Title of Article
T. Ogata Impact of nitridation engineering on microscopic SILC characteristics of sub-10-nm tunnel dielectrics
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Int. ELECTRON DEVICES meeting   1998 597-600

Author Title of Article
K. Kobayashi Electron traps and excess current induced by hot-hole injection into thin SiO2 films
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J. Electrochem. Soc. 143 1996 3377-3383

Author Title of Article
T. Nakano Effects of Ar dilution on the optical emission spectra of fluorocarbon ultra-high frequency plasmas
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J. Vac. Sci. Technol. A17 1999 686-691

Author Title of Article
S. Samukawa Effects of rare gas dilution on dissociation and ionization in fluorocarbon gas plasma
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J. Vac. Sci. Technol. A17 1999 500-505

Author Title of Article
S. Samukawa Degree of Cl2 dissociation and etching characteristics in high-density plasmas
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J. Vac. Sci. Technol. A17 1999 774-779

Author Title of Article
A. Yokozawa Simulation for variations in the negative ion density in a pulse time-modulated Cl2 plasma
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Jpn. J. Appl. Phys. 38 1999 4437-4477

Author Title of Article
S. Samukawa New radical-control method for high performance SiO2 etching with non-perfluorocarbon gas chemistries
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J. Vac. Sci. Technol. A17 1999 2551-2556

Author Title of Article
S. Samukawa New gas chemistries for high-performance and chargeless dielectric etchings
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Materials Science in Semiconductor Processing 1.2 1999 203-208

Author Title of Article
S. Samukawa Differences of radical generation on chemical bonding of gas molecule in high-density fluorocarbon plasma
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J. Vac. Sci. Technol. A17 1999 2463-2466

Author Title of Article
B. Mebarki Polycrystalline film formation at low temperature using ultra-high frequency plasma system
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Materials Letters 41 1999 16-19.

Author Title of Article
M. V. Malyshev Dynamics of pulsed-power chlorine plasma
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J. Appl. Phys. 186 1999 4813-4820

Author Title of Article
T. Nakano The correlation between an electric field and the metastable chlorine ion density distributions in an UHF plasma
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Jpn. J. Appl. Phys. 37 1998 2686-

Author Title of Article
T. Nakano Radial distributions of ion velocity, temperature, and density in UHF, ICP and ECR
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J. Vac. Sci. Technol. A16 1998 2065-

Author Title of Article
H. Ohtake Enhancement of reactivity in Au etching by pulse-time-modulated Cl2 plasma
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Jpn. J. Appl. Phys. 37 1998 2311

Author Title of Article
S. Samukawa Effects of discharge frequency on plasma characteristics in high density Cl2 plasma
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IEEE Trans. Plasma Sci. 26 1998 1621-

Author Title of Article
M. V. Malyshev Comparison of Cl and Cl2 concentrations and electron temperatures measured by trace rare gases optical emission spectroscopy
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J. Appl. Phys. 84 1998 1222-

Author Title of Article
S. Samukawa Effects of degree of dissociation on Al etching characteristics in high density Cl2 plasma
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Jpn. J. Appl. Phys. 37 1999 L1036-

Author Title of Article
S. Samukawa New radical injection method for SiO2 etching with non-perfluorocomponud gas chemistries
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Jpn. J. Appl. Phys 37 1998 L1095-

Author Title of Article
S. Inumiya Sub-1.3nm amorpho us tantalum pentoxide gate dielectrics for damascene metal gate transistors
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Jpn. J. Appl. Phys   2000 2087-2093

Author Title of Article
T. Sait Plasma-damage-free gate process using chemical mechanical polishing for 0.1 μ m MOSFETs
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Jpn. J. Appl. Phys.   1999 2227-223

Author Title of Article
A. Yagishita High performance damascene metal gate MOSFETs for 0.1 μ m regime
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IEEE Trans. Electron. Devices   2000 1028-1034

Author Title of Article
K. Nakajima Formation mechanism of ultrathin WSiN barrier layer in a W/WNx/Si system
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Appl. Surf. Sci. 117/118 1997 312-316

Author Title of Article
T. Kijima Preparation of Bi4 Ti3 O12 thin films on Si(100) substrate using Bi2 SiO5 buffer layer and its electrical characterization
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Jpn. J. Appl. Phys. 37 1998 5171-5173

Author Title of Article
T. Kijima New low-temperature processing of metalorganic chemical vapor deposition-Bi4 Ti3 O12 thin films using BiOx buffer layer
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Jpn. J. Appl. Phys. 38 1999 127-130

Author Title of Article
T. Kijima Low temperature preparation of fatigue free Bi4 Ti3 O12 thin films by MOCVD and their electrical properties
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Proceeding of the Tenth IEEE, International Symposium on Applications of Ferroelectrics   1996  


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