| 1.Research Institution | Nagoya University | |
| 2.University-Industry Cooperative Research Committee | 131st Committee on Thin Films | |
| 3.Term of Project | FY1996〜FY2000 | |
| 4.Project Number | 96R13101 | |
| 5.Title of Project | Development of Thin Films for Future ULSI's and Nano-Scale Process Integration |
| Name | Institution,Department | Title of Position |
| Yukio Yasuda | Nagoya University, Graduate School of Engineering | Professor |
7.Core Members
| Names | Institution,Department | Title of Position |
| Shigeaki Zaima | Nagoya University, Center of Cooperative Research in Advanced Science and Technology | Professor |
| Nobuo Tanaka | Nagoya University, Graduate School of Engineering | Professor |
| Masaru Hori | Nagoya University, Graduate School of Engineering | Associate Professor |
8.Cooperating Researchers
| Names | Institution,Department | Title of Position |
| Masanori Okuyama | Osaka University, Graduate School of Engineering Science | Professor |
| Murota Junichi | Tohoku University, Research Institute of Electrical Communication | Professor |
| Hiroshi Iwai | Tokyo Institute of Technology, Interdisciplinary Graduate School of Science and Engineering | Professor |
9.Summary of Research Results
|
We have developed appropriate and promising technologies of thin-film materials, elemental fabrication processes, and nano-scale device structures, all of which are expected to be used for the next generation ULSI devices, on the basis of the total integration of the ULSI fabrication process. The obtained results and conclusions are summarized as follows. 1. Application of SiGe interlayers and CoSi2 epitaxial films to form shallow junctions with very low contact-resistivity has been proposed. 2. A damascene process to fabricate metal gate electrodes has been developed. 3. Degradation mechanisms of ultra thin SiO2 gate dielectric films have been clarified and high-k materials used for the next generation ULSI's gate oxides have been explored. 4. Atomic-layer-controlled epitaxy/etching processes for SiGe(C) alloys and a novel method to form high-quality strain-relaxed SiGe buffer layers have been developed for high-mobility Si devices. 5. MFIS structures with SBT thin films have been proposed to realize high performance memory devices. 6. Al-CVD wiring processes with DMAH have been studied for their practical use and damascene Cu and low-k dielectrics module has been demonstrated at 130-nm node. 7. Ecological dry etching processes based on a plasma etching with a solid source have been developed. 8. An in situ monitoring method for hydrogen which plays a critical role in thin film evolution and direct observation technique of atomic structure in semiconductor materials have been developed. 9. Materials design of organic films for the development of ultra low-k films and non-PFC processes has been performed. |
10.Key Words
(1)nano-scale device structures、(2)total integration、(3)low contact-resistivity
(4)gate dielectric films、(5)high-k materials、(6)SiGe(C) alloys
(7)MFIS structures、(8)etching processes、(9)low-k films
11.References
| Author | Title of Article | |||
| Y. Hayashi | Application of a two-step growth to the formation of epitaxial CoSi2 films on Si(001) surfaces: Comparative study using reactive deposition epitaxy | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 40 | 2001 | 269-275 | |
| Author | Title of Article | |||
| K. Ohmori | Trap generation in ultrathin SiO2 films due to electron injection studied by scanning tunneling microscopy/scanning tunneling spectroscopy | |||
| Journal | Volume | Year | Pages Concerned | |
| Appl. Surf. Sci. | 162-163 | 2000 | 395-400 | |
| Author | Title of Article | |||
| M. Wasekura | A study on initial oxidation of Si(100)-2x 1 surfaces by coaxial impact collision ion scattering spectroscopy (CAICISS) | |||
| Journal | Volume | Year | Pages Concerned | |
| Appl. Surf. Sci. | 159-160 | 2000 | 35-40 | |
| Author | Title of Article | |||
| O. Nakatsuka | Dependence of contact resistivity on impurity concentration in Co/Si systems | |||
| Journal | Volume | Year | Pages Concerned | |
| Appl. Surf. Sci. | 159-160 | 2000 | 149-153 | |
| Author | Title of Article | |||
| H. Kageshima | Selectivity for O adsorption position on dihydride Si(100) surfaces | |||
| Journal | Volume | Year | Pages Concerned | |
| Appl. Surf. Sci. | 159-160 | 2000 | 14-18 | |
| Author | Title of Article | |||
| H. Fujita | Orientation dependence of ferroelectric properties of Pb(Zrx Ti1-x)O3 thin films on Pt/SiO2/Si substrates | |||
| Journal | Volume | Year | Pages Concerned | |
| Appl. Surf. Sci. | 159-160 | 2000 | 134-137 | |
| Author | Title of Article | |||
| S. Zaima | Low resistivity contact materials for ULSI applictions and metal/silicon interfaces | |||
| Journal | Volume | Year | Pages Concerned | |
| Ext. Abst. 19th Electronic Symp. Izu-Nagaoka2 | 2000 | 3-6 | ||
| Author | Title of Article | |||
| H. Fujita | Control of crystal structure and ferroelectric properties of Pb(Zrx Ti1-x)O3 films formed by pulsed laser deposition | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 39 | 2000 | 7035-7039 | |
| Author | Title of Article | |||
| K. Ohmori, | The origin and the creation mechanism of positive charges in silicon oxide films | |||
| Journal | Volume | Year | Pages Concerned | |
| Proc. of the 4th Int. Symp. on the Physics and Chemistry of SiO2 and the Si-SiO2 interface | 2000 | 345-352 | ||
| Author | Title of Article | |||
| Y. Yasuda | Interfacial reactions of Ti/ and Zr/Si1-xGex/Si contacts with rapid thermal annealing | |||
| Journal | Volume | Year | Pages Concerned | |
| Thin Solid Films | 373 | 2000 | 73-78 | |
| Author | Title of Article | |||
| D. Matsushita | Scanning tunneling microscopy/scanning tunneling spectroscopy of initial nitridation process of Si(100)-2x1 surfaces | |||
| Journal | Volume | Year | Pages Concerned | |
| Thin Solid Films | 369 | 2000 | 293-296 | |
| Author | Title of Article | |||
| K. Sato, | A study on the local bonding structures of oxidized Si(111) surfaces by HREELS | |||
| Journal | Volume | Year | Pages Concerned | |
| Thin Solid Films | 369 | 2000 | 277-280 | |
| Author | Title of Article | |||
| M. Okada | Epitaxial growth of heavily B-doped SiGe films and interfacial reaciton of Ti/B-doped SiGe bilayer structure using rapid thermal processing | |||
| Journal | Volume | Year | Pages Concerned | |
| Thin Solid Films | 369 | 2000 | 130-133 | |
| Author | Title of Article | |||
| I. Suzumura | Nucleation and growth of Ge on Si(111) in solid phase epitaxy | |||
| Journal | Volume | Year | Pages Concerned | |
| Thin Solid Films | 369 | 2000 | 116-120 | |
| Author | Title of Article | |||
| H. Iwano | Effect of Ge atoms on interfacial reactions of Ti/ and Zr/Si1-xGex/Si contacts | |||
| Journal | Volume | Year | Pages Concerned | |
| Advanced Metallization and Interconnect Systems for ULSI Applications in 1998 | 1999 | 599-604 | ||
| Author | Title of Article | |||
| O. Nakatsuka, | Formation and electrical properties of Co/Si contacts by rapid thermal annealing | |||
| Journal | Volume | Year | Pages Concerned | |
| Advanced Metallization and Interconnect Systems for ULSI Applications in 1998 | 1999 | 605-611 | ||
| Author | Title of Article | |||
| H. Ikeda | Influences of impurities on oxidation processes of Si(100) substrates | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 38 | 1999 | 2345-2348 | |
| Author | Title of Article | |||
| H. Ikeda | Initial oxidation processes of H-terminated Si(100) surfaces analyzed using a random sequential adsorption model | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 38 | 1999 | 3422-3425 | |
| Author | Title of Article | |||
| Y. Hayashi | Solid-phase epitaxial growth of CoSi2 on clean and oxygen-adsorbed Si(001) surfaces | |||
| Journal | Volume | Year | Pages Concerned | |
| Surf. Sci. | 438 | 1999 | 116-122 | |
| Author | Title of Article | |||
| Y. Hayashi | Effects of initial surface states on formation porcesses of epitaxial CoSi2(100) on Si(100) | |||
| Journal | Volume | Year | Pages Concerned | |
| Thin Solid Films | 343/344 | 1999 | 562-566 | |
| Author | Title of Article | |||
| H. Ikeda | Influences of deuterium atoms on local bonding structures of SiO2 studied by HREELS | |||
| Journal | Volume | Year | Pages Concerned | |
| Thin Solid Films | 343/344 | 1999 | 408-411 | |
| Author | Title of Article | |||
| M. Okada | Hydrogen Effect on Heteroepitaxial Growth of Ge Films on Si(111) Surfaces by Solid Phase Epitaxy" | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys., part 1 | 37 | 1998 | 6970-6973 | |
| Author | Title of Article | |||
| H. Iwano | Effect of Ge atoms on interfacial reaction of Ti/ and Zr/Si1-xGex/Si contacts | |||
| Journal | Volume | Year | Pages Concerned | |
| Adv. Metallization Conference in 1998 | 1999 | 599-604 | ||
| Author | Title of Article | |||
| O. Nakatsuka | Contact resistivities and electrical characteristics of Co/Si contacts by rapid thermal annealing | |||
| Journal | Volume | Year | Pages Concerned | |
| Adv. Metallization Conference in 1998 | 1999 | 605-611 | ||
| Author | Title of Article | |||
| M. Okada | Nucleation and growth of Ge on Si(111) by MBE with additional atomic hydrogen irradiation studied by scanning tunneling microscopy | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Cryst. Growth | 188 | 1998 | 119-124 | |
| Author | Title of Article | |||
| A. Muto | Effects of H-termination on Ge film growth on Si(111) surfacesby solid phase epitaxy | |||
| Journal | Volume | Year | Pages Concerned | |
| Appl. Surf. Sci. | 130-132 | 1998 | 321-326 | |
| Author | Title of Article | |||
| Y. Nakagawa | Local bonding structure of SiO2 Films on H-terminated Si(100)surfaces studied by using high-resolution electron energy lossspectroscopy | |||
| Journal | Volume | Year | Pages Concerned | |
| Appl. Surf. Sci. | 130-132 | 1998 | 192-196 | |
| Author | Title of Article | |||
| Y. Yasuda | Effects of atomic hydrogen on growth behavior of Si filmsby Si2H6-source molecular beam epitaxy | |||
| Journal | Volume | Year | Pages Concerned | |
| Thin Solid Films | 317 | 1998 | 48-51 | |
| Author | Title of Article | |||
| H. Iwano | Hopping conduction and localized states in p-Si wiresformed by focused ion beam implantations | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Vac. Sci. Technol. | B16 | 1998 | 2551-2554 | |
| Author | Title of Article | |||
| H. Iwano | Surface roughness of strain-relaxed Si1-xGex layers grown bytwo-step growth method | |||
| Journal | Volume | Year | Pages Concerned | |
| Thin Solid Films | 317 | 1998 | 17-20 | |
| Author | Title of Article | |||
| H. Iwano | Electrical properties and interfacial reactions at Co/Si(100) contacts | |||
| Journal | Volume | Year | Pages Concerned | |
| Mat. Res. Soc. Symp. Proc. | 1998 | 669-675 | ||
| Author | Title of Article | |||
| Y. Hayashi | A new growth method of epitaxial cobalt disilicide on Si(100) | |||
| Journal | Volume | Year | Pages Concerned | |
| Mat. Res. Soc. Symp. Proc. | 1998 | 663-668 | ||
| Author | Title of Article | |||
| S. Zaima | Study of reaction and electrical properties at Ti/SiGe/Si(100) contacts for ultralarge scale integrated applications | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Vac. Sci. Technol. | B16 | 1998 | 2623-2628 | |
| Author | Title of Article | |||
| K. Sakata | Quantum chemical study of the oxidation sites in hydrogen- and water- terminated Si dimers: Attempt to understand the Si-Si back-bond oxidation on the Si surface | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys | 37 | 1998 | 4962-4973 | |
| Author | Title of Article | |||
| H. Ikegami | Thermal stability of ultra-thin CoSi2 films on Si(100)-2x 1 surfaces | |||
| Journal | Volume | Year | Pages Concerned | |
| Appl. Surf. Sci. | 117/118 | 1997 | 257-279 | |
| Author | Title of Article | |||
| K. Ohmori, | Initial oxidation of Si(100)-(2x1)H monohydride surfaces studied by scanning tunneling microscopy/scanning tunneling spectroscopy | |||
| Journal | Volume | Year | Pages Concerned | |
| Appl. Surf. Sci. | 117/118 | 1997 | 114-118 | |
| Author | Title of Article | |||
| H. Ikeda | Initial oxidation of H-terminated Si(111) surfaces studied by HREELS | |||
| Journal | Volume | Year | Pages Concerned | |
| Appl. Surf. Sci. | 117/118 | 1997 | 109-113 | |
| Author | Title of Article | |||
| Y. Yasuda | Efects of H-termination on initial oxidation process | |||
| Journal | Volume | Year | Pages Concerned | |
| Appl. Surf. Sci. | 113/114 | 1997 | 579-584 | |
| Author | Title of Article | |||
| M. Okada | The influence of additional atomic hydrogen on the monolayer growth of Ge on Si(100) studied by STM | |||
| Journal | Volume | Year | Pages Concerned | |
| Appl. Surf. Sci. | 113/114 | 1997 | 349-353 | |
| Author | Title of Article | |||
| M. Okada | Hydrogen effects on Si1-xGex/Si heteroepitaxial growth by Si2H6- and GeH4-source molecular beam epitaxy | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 36 | 1997 | 7665-7668 | |
| Author | Title of Article | |||
| H. Kondo | Conductance oscillations in hopping conduction systems fabricated by focused ion beam implantation | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 36 | 1997 | 4046-4048 | |
| Author | Title of Article | |||
| H. Ikegami | Study on CoSi2 formation on Si(100)-2x1 surfaces by scanning tunneling microscopy and scanning tunneling spectroscopy | |||
| Journal | Volume | Year | Pages Concerned | |
| Proc. of Advanced Metallization and Interconnect Systems for ULSI Applications in 1995 | 1996 | 511-516 | ||
| Author | Title of Article | |||
| H. Ikeda | Initial oxidation processes of H-terminated Si(100) surfaces studied by high-resolution electron energy loss spectroscopy | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 35 | 1996 | 1069-1072 | |
| Author | Title of Article | |||
| H. Ikeda | Initial oxidation of Si(311) surfaces studied by HREELS | |||
| Journal | Volume | Year | Pages Concerned | |
| Appl. Surf. Sci. | 100/101 | 1996 | 431-435 | |
| Author | Title of Article | |||
| H. Iwano | Novel method of strain-relaxed Si1-xGex growth on Si(100) by MBE | |||
| Journal | Volume | Year | Pages Concerned | |
| Appl. Surf. Sci. | 100/101 | 1996 | 487-490 | |
| Author | Title of Article | |||
| H. Shinoda | Electrical properties of metal/SiGe/Si(100) heterojunctions | |||
| Journal | Volume | Year | Pages Concerned | |
| Appl. Surf. Sci. | 1996 | 526-529 | ||
| Author | Title of Article | |||
| H. Ikegami | Oxide formation on Si(100)-2x1 surfaces studied by scanning tunneling microscopy/ scanning tunneling spectroscopy | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 35 | 1996 | 1593-1597 | |
| Author | Title of Article | |||
| J. Kojima | Formation of defects by silicidation reaction at Ti/Si interfaces | |||
| Journal | Volume | Year | Pages Concerned | |
| Proc. of Advanced Metallization and Interconnect Systems for ULSI Applications in 1995 | 1996 | 517-522 | ||
| Author | Title of Article | |||
| H. Ikeda | Influences of hydrogen on initial oxidation processes of H-terminated Si(100) surfaces | |||
| Journal | Volume | Year | Pages Concerned | |
| Appl. Surf. Sci. | 104/105 | 1996 | 354-358 | |
| Author | Title of Article | |||
| S. Zaima | Studies on the suppression of Ge segregation during Si overgrowth on Ge(n ML)/Si(100) substrates by gas-source MBE | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Crystal Growth | 163 | 1996 | 105-112 | |
| Author | Title of Article | |||
| J. J. Hu | Beam alignment and related problems of spherical aberration corrected high-resolution TEM images | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Electron Microscopy | 49 | 2000 | 651-656 | |
| Author | Title of Article | |||
| N. Tanaka | Time-resolved HRTEM and HAADF-STEM of metal-mediated crystallization of amorphous germanium films | |||
| Journal | Volume | Year | Pages Concerned | |
| Material Science Eng., A, (in print) | ||||
| Author | Title of Article | |||
| N. Tanaka | HAADF-STEM of partially ordered Ni-19. 5at%Mo alloys | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Physique, IV, France | 10 | 2000 | 85-90 | |
| Author | Title of Article | |||
| N. Baba | An auto-tuning method of focusing and astigmatism correction for the HAADF-STEM based on image-contrast transfer function | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Electron Microscopy, (in print) | 50 | 2000 | ||
| Author | Title of Article | |||
| M. Koguchi | Three-dimensional STEM for observing Nano-structures | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Electron Microscopy, (in print) | 50 | 2000 | ||
| Author | Title of Article | |||
| N. Tanaka | STM/STS studies of tungsten clusters on Si(111) surfaces using a newly developed deposition apparatus | |||
| Journal | Volume | Year | Pages Concerned | |
| Micron | 30 | 1999 | 135-139 | |
| Author | Title of Article | |||
| N. Tanaka | An on-line correction method of defocus and astigmatism in HAADF- STEM | |||
| Journal | Volume | Year | Pages Concerned | |
| Ultramicrosc. | 78 | 1999 | 103-110 | |
| Author | Title of Article | |||
| N. Tanaka | Time-resolved HREM of Metal-mediated crystallization of amorphous Ge films | |||
| Journal | Volume | Year | Pages Concerned | |
| Proc. of Int. Conf. on Solid-Solid Phase Transformations'99 | ||||
| Author | Title of Article | |||
| J. J. Hu | A study of the validity of the image deconvolution method on the basis of channeling theory for thicker crystals | |||
| Journal | Volume | Year | Pages Concerned | |
| Ultramicrosc | 80 | 1999 | 1-5 | |
| Author | Title of Article | |||
| J. J. Hu | Direct atomic observation of Ge/Si(001) interfaces by image processing methods in high-resolution electron microscopy | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Electron Microscopy | 47 | 1998 | 581 | |
| Author | Title of Article | |||
| N. Tanaka | Theoretical basis of image-deconvolution methods for structure images of thin crystals | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Electron Micoroscopy | 47 | 1998 | 217 | |
| Author | Title of Article | |||
| J. J. Hu | An approximate multi-beam form of the ellipse in high-resolution transmission electron microscopy | |||
| Journal | Volume | Year | Pages Concerned | |
| Ultramicroscopy | 74 | 1998 | 105 | |
| Author | Title of Article | |||
| K. Nakamura | Position dependence of the visibility of a single gold atom in silicon crystals in HAADFSTEM image simulation | |||
| Journal | Volume | Year | Pages Concerned | |
| Journal of Electron Microscopy | 1 | 1997 | 33-43 | |
| Author | Title of Article | |||
| N. Tanaka | HREM and measurement of magnetic properties of Fe- clusters embedded in MgO Films | |||
| Journal | Volume | Year | Pages Concerned | |
| Mat. Sci. and Eng. | A217/218 | 1996 | 311-318 | |
| Author | Title of Article | |||
| K. Fuijita | Amorphous silicon and tungsten etching employing environmentally benign plasma process | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys | 40 | 2001 | 832-836 | |
| Author | Title of Article | |||
| H. Ohta | Formation of silicon nitride gate dielectric films at 300℃ employing radical chemical vapor deposition | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Vac. Sci. Technol. | B18 | 2000 | 2486-2490 | |
| Author | Title of Article | |||
| H. Ohta | Effect ofions and radicals on formation of silicon nitride gate dielectric film using plasma chemical vapor deposition | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Appl. Phys., (in press) | 89 | 2001 | ||
| Author | Title of Article | |||
| M. Nakamura | Behaviors of gas species in low global warming potential gas plasmas for low dielectric constant film formation | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Vac. Sci. Technol., (submitted) | B19 | 2001 | ||
| Author | Title of Article | |||
| K. Fujita | Novel process for SiO2/Si selective etching using a novel gas source for preventing global warming | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Vac. Sci. Technol. | B17 | 1999 | 957-960 | |
| Author | Title of Article | |||
| K. Fujita | Silicon oxide selective etching process keeping harmony with environment by using radical injection technique | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Vac. Sci. Technol. | A17 | 1999 | 3260-3264 | |
| Author | Title of Article | |||
| K. Fujita | Environmentally harmonious etching process for cleaning amorphous silicon and tungsten in chemical vapor deposition chamber | |||
| Journal | Volume | Year | Pages Concerned | |
| Materials Science in Semiconductor Processing | 2 | 1999 | 219-223 | |
| Author | Title of Article | |||
| K. Teii | Study on polymeric neutral species in high-density fluorocarbon plasmas | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Vac. Sci. Technol. | A18 | 2000 | 1-9 | |
| Author | Title of Article | |||
| M. Inayoshi | Surface reaction of CF2 radicals for fluorocarbon film formation in SiO2/Si selective etching process | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Vac. Sci. Technol. | A16 | 1998 | 233-238 | |
| Author | Title of Article | |||
| A. A. Saranin | Composition and surface structure of quantum chains on a In/Si(111) surface | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 39 | 2000 | L306-L308 | |
| Author | Title of Article | |||
| T. Fujino | Ge thin film growth on Si(111) using hydrogen surfactant | |||
| Journal | Volume | Year | Pages Concerned | |
| Thin Solid Films | 369 | 2000 | 25-28 | |
| Author | Title of Article | |||
| T. Fujino | Structural analysis of the 6H-SiC(0001)-√3x√3 reconstructed surface | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 39 | 2000 | 6410-6412 | |
| Author | Title of Article | |||
| T. Fujino | Ion scattering and recoiling spectroscopy for real time monitoring of surface processes in a Gas phase atomosphere | |||
| Journal | Volume | Year | Pages Concerned | |
| Surf. Rev. Lett. | 7 | 2000 | 657-659 | |
| Author | Title of Article | |||
| M. Katayama | Coaxial impact-collision ion scattering spectroscopy and time-of-flight elastic recoil detection analysis for in-situ monitoring of surface processes in Gas phase atmoshere | |||
| Journal | Volume | Year | Pages Concerned | |
| submitted to Jpn. J. Appl. Phys. | ||||
| Author | Title of Article | |||
| T. Fuse | Total cross-section of electron stimulated desorption of hydrogen from hydrogen-terminated Ge/Si(001) as observed by time-of-flight elastic recoil detection analysis | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 38 | 1999 | 2878-2880 | |
| Author | Title of Article | |||
| J. -T. Ryu | Adsorption of atomic hydrogen on the Si(001)4x3-In surface studied by coaxial impact collision ion scattering spectroscopy and scanning tunneling microscopy | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Vac. Sci. Technol. | B17 | 1999 | 983-988 | |
| Author | Title of Article | |||
| T. Fuse | In situ observation of Ge δ -layer in Si(001) using quasi medium energy ion scattering spectroscopy | |||
| Journal | Volume | Year | Pages Concerned | |
| Materials Science in Semiconductor Processing | 2 | 1999 | 159-164 | |
| Author | Title of Article | |||
| J. -T. Ryu | The growth of indium thin films on clean and H-terminated Si(100) surfaces | |||
| Journal | Volume | Year | Pages Concerned | |
| Surf. Sci. | 433-435 | 1999 | 575-580 | |
| Author | Title of Article | |||
| T. Fuse | Quasi-medium energy ion scattering spectroscopy observation of a Ge δ -doped layer fabricated by hydrogen mediated epitaxy | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 37 | 1998 | 2625-2628 | |
| Author | Title of Article | |||
| J. -T. Ryu | The effect of hydrogen termination on in growth on Si(100) surface | |||
| Journal | Volume | Year | Pages Concerned | |
| Surf. Sci. | 401 | 1998 | L425-L431 | |
| Author | Title of Article | |||
| T. Fuse | Observation of behavior of Ge δ -doped layer in Si(001) | |||
| Journal | Volume | Year | Pages Concerned | |
| Nucl. Instrum. & Methods Phys. Res. | B136-138 | 1998 | 1080-1085 | |
| Author | Title of Article | |||
| J. -T. Ryu | CAICISS studies of atomic-hydrogen-induced structural changes of the Sb terminated Si surfaces | |||
| Journal | Volume | Year | Pages Concerned | |
| Nucl. Instrum. & Methods Phys. Res. | B136-138 | 1998 | 1102-1107 | |
| Author | Title of Article | |||
| J. -T. Ryu | Atomic hydrogen interaction with the Si(100)4x3-In surface studied by scanning tunneling microscopy | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 37 | 1998 | 3774-3777 | |
| Author | Title of Article | |||
| M. Katayama | Atomic-hydrogen-induced self-organization processes of the In/Si(111) surface phases studied by scanning tunneling microscopy | |||
| Journal | Volume | Year | Pages Concerned | |
| Appl. Surf. Sci. | 130-132 | 1998 | 765-770 | |
| Author | Title of Article | |||
| T. Fuse | Electron stimulated desorption of hydrogen from H/Si(001)-1x1 surface studied by TOF-ERDA | |||
| Journal | Volume | Year | Pages Concerned | |
| Surf. Sci. | 420 | 1999 | 81-86 | |
| Author | Title of Article | |||
| J. -T. Ryu | Adsorption of atomic hydrogen on the Si(100)-(2xl)-Sb surface | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 36 | 1997 | 4435-4439 | |
| Author | Title of Article | |||
| J. -T. Ryu | Atomic-hydrogen-induced structural change of the Si(100)-(2xl)-Sb surface studied by TOF-ICISS | |||
| Journal | Volume | Year | Pages Concerned | |
| Appl. Surf. Sci. | 121/122 | 1997 | 223-227 | |
| Author | Title of Article | |||
| T. Fuse | Quasi-medium energy ion scattering spectroscopy study of Ge δ-layer on Si(001) | |||
| Journal | Volume | Year | Pages Concerned | |
| Appl. Surf. Sci. | 121/122 | 1997 | 218-222 | |
| Author | Title of Article | |||
| A. Saranin | Structural transformations of the Si(111)2x2-In surface induced by STM tip and thermal annealing | |||
| Journal | Volume | Year | Pages Concerned | |
| Appl. Surf. Sci. | 121/122 | 1997 | 183-186 | |
| Author | Title of Article | |||
| A. Saranin | STM observation of the atomic hydrogen adsoprption on the Si(111)4x1-In surface | |||
| Journal | Volume | Year | Pages Concerned | |
| Appl. Surf. Sci. | 113/114 | 1997 | 354-359 | |
| Author | Title of Article | |||
| A. Saranin | STM tip-induced diffusion of In atoms on the Si(111)√3x√3-In surface | |||
| Journal | Volume | Year | Pages Concerned | |
| Phys. Rev. | B56 | 1997 | 7449-7454 | |
| Author | Title of Article | |||
| A. Saranin | Structural model for the Si(111)-4x1-In reconstruction | |||
| Journal | Volume | Year | Pages Concerned | |
| Phys. Rev. | B56 | 1997 | 1017-1020 | |
| Author | Title of Article | |||
| T. Fus | Quasimedium energy ion scattering spectroscopy observation of surface segregation of Ge δ-doped layer during Si molecular beam epitaxy | |||
| Journal | Volume | Year | Pages Concerned | |
| Surf. Sci. | 393 | 1997 | L93-L98 | |
| Author | Title of Article | |||
| A. Saranin | Structural transformation at room temperature adsorption of In on Si(111)√3x√3-In surface: LEED-AES-STM study | |||
| Journal | Volume | Year | Pages Concerned | |
| Surf. Sci. | 388 | 1997 | 299-307 | |
| Author | Title of Article | |||
| K. Oura | Atomic-hydrogen-induced Ag cluster formation on Si(111)-√3x√3-Ag surface | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Vac. Technol. | B14 | 1996 | 988-991 | |
| Author | Title of Article | |||
| Y. Tanaka | Thin-film growth mode analysis by low energy ion scattering | |||
| Journal | Volume | Year | Pages Concerned | |
| Surf. Sci. | 363 | 1996 | 161-165 | |
| Author | Title of Article | |||
| K. Kawamoto | Observation of the diffusion of Ag atoms through an a-Si layer on Si(111)by low energy ion scattering | |||
| Journal | Volume | Year | Pages Concerned | |
| Surf. Sci. | 363 | 1996 | 156-160 | |
| Author | Title of Article | |||
| H. Sugiyama | An improvement in C-V characteristics of metal-ferroelectric-insulator-semiconductor structure for ferroelectric gate FET memory using a silicon nitride bufferlayer | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 39 | 2000 | 2131 | |
| Author | Title of Article | |||
| M. Okuyama | Low-temperature preparation of SrBi2Ta2O9 ferroelectric thin film by pulsed laser deposition and its application to metal-ferroelectric-insulator-semiconductor structure | |||
| Journal | Volume | Year | Pages Concerned | |
| Appl. Surf. Sci. | 154-155 | 2000 | 411 | |
| Author | Title of Article | |||
| Z. Wei | Low-temperature crystallization of metal organic decomposition BaTiO3 thin film by hydrothermal annealing | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 39, | 2000 | 4217 | |
| Author | Title of Article | |||
| T. Nakaiso | Low-temperature preparation of Sr2(Ta1-x, Nbx)2O7 thin films by pulsed laser deposition and its electrical properties | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 39 | 2000 | 5517 | |
| Author | Title of Article | |||
| M. Noda | Low temperature preparation of Sr2(Ta1-x, Nbx)2O7 ferroelectric thin film by pulsed laser depositio | |||
| Journal | Volume | Year | Pages Concerned | |
| Ferroelectric Thin Films VIII | 596 | 2000 | 185- | |
| Author | Title of Article | |||
| T. Nakaiso | Low-temperature preparation of ferroelectric Sr2(Ta1-x, Nbx)2O7 thin films by pulsed laser deposition and their application to metal-ferroelectric- insulator- semiconductor-FET | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys., (in press) | ||||
| Author | Title of Article | |||
| M. Takahashi | Analysis and improvement of retention time of memorized state of metal-ferroelectric-insulator semiconductor structure for ferroelectric Gate FET memory | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys., (in press) | ||||
| Author | Title of Article | |||
| K. Hashimoto | Detector pixel in dielectric bolometer mode based on ferroelectric thin film capacitors for uncooled infrared image sensor | |||
| Journal | Volume | Year | Pages Concerned | |
| Transactions of the Institute of Electrical Engineers of Japan | 120-E | 2000 | 15-19 | |
| Author | Title of Article | |||
| M. Noda | A low temperature preparation of Sr0.7Bi2+xTa2O9 thin films on SiO2/Si by pulsed laser deposition for application of metal-ferroelectric-insulator-semiconductor structure | |||
| Journal | Volume | Year | Pages Concerned | |
| Ferroelectric Letters. | 26 | 1999 | 17-28 | |
| Author | Title of Article | |||
| M. Noda | A fatigue-tolerant metal-ferroelectric-oxide-semiconductor structure with large memory window using Sr-deficient and Bi-excess Sr0.7Bi2+yTa2O9 ferroelectric films prepared on SiO0.7Bi2+xTa2O9 /Si at low temperature by pulsed laser deposition method | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 38 | 1999 | 2275-2280 | |
| Author | Title of Article | |||
| M. Noda | "A new type of dielectric bolometer mode of detector pixel using ferroelectric thin film capacitors for infrared image sensor | |||
| Journal | Volume | Year | Pages Concerned | |
| Sensors and Actuators | A77 | 1999 | 39-44 | |
| Author | Title of Article | |||
| M. Noda | "A new type of dielectric bolometer mode of infrared detector using ferroelectric thin film capacitors for uncooled focal plane arrays | |||
| Journal | Volume | Year | Pages Concerned | |
| SPIE Opto-Electronics Review, Special Issues on Infrared Focal Plane Arrays | 7 | 1999 | 313-320 | |
| Author | Title of Article | |||
| M. Okuyama | A low temperature preparation of ferroelectric SrxBi2+yTa2O9 thin film and its application to metal-ferroelectric-insulator-semiconductor structure | |||
| Journal | Volume | Year | Pages Concerned | |
| Materials Science in Semiconductor Processing | 2 | 1999 | 239-245 | |
| Author | Title of Article | |||
| M. Noda | A study on metal-ferroelectric-oxide-semiconductor structure with thin silicon oxide film using SrBi2Ta2O9 ferroelectric films prepared by pulsed laser deposition | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 38 | 1999 | 5432-5436 | |
| Author | Title of Article | |||
| M. Okuyama | Preparation of Sr0.7Bi2+xTa2O9 thin films on SiO2/Si at low temperature by pulsed laser deposition and fatigue-tolerant C-V characteristics with large memory window | |||
| Journal | Volume | Year | Pages Concerned | |
| Mat. Res. Soc. Symp. Proc. | 541 | 1999 | 299-304 | |
| Author | Title of Article | |||
| Z. Song | Variation of the microstructure and morphology with oxygen pressure in Ba0.51Sr0.48La0.01Nb2O6 thin films prepared by pulsed laser deposition | |||
| Journal | Volume | Year | Pages Concerned | |
| Materials Letters | 40 | 1999 | 83-90 | |
| Author | Title of Article | |||
| D. Ricinschi | Theoretical analysis of fatigue in PZT ceramics on the basis of landau theory | |||
| Journal | Volume | Year | Pages Concerned | |
| Journal of Korean Physical Society | 35 | 1999 | S1313-S1317 | |
| Author | Title of Article | |||
| T. Kanashima | Analyses of high frequency capacitance-voltage characteristics of metal-ferroelectrics-insulator-silicon structure | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 38 | 1999 | 2044-2048 | |
| Author | Title of Article | |||
| M. Okuyama | Stabilization of electron emission from PZT by MgO coatings | |||
| Journal | Volume | Year | Pages Concerned | |
| Journal of the Korean Physical Society | 35 | 1999 | S1525-S1528 | |
| Author | Title of Article | |||
| D. Ricinschi | Analysis of ferroelectric switching in finite media as a landau-type phase transition | |||
| Journal | Volume | Year | Pages Concerned | |
| J. of Phys. : Condensed Matter | 10 | 1998 | 477-492 | |
| Author | Title of Article | |||
| D. Ricinschi | Grain size-dependent switching in barium titanate ferroelectric ceramics analyzed by means of their landau coefficient | |||
| Journal | Volume | Year | Pages Concerned | |
| 6th Japan-CIS/Baltic Symposium on Ferroelectricity | 1998 | |||
| Author | Title of Article | |||
| V. Tura | Investigation of grain-size influence on the ferroelectric- to-paraelectric phase transition in BaTiO3 ceramics by means of AC calorimetry | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 37 | 1998 | 1950-1954 | |
| Author | Title of Article | |||
| M. Okuyama | Basic characteristics of SrBi2Ta2O9/SiO2/Si structure | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Korean Phys. Soc. | 32 | 1998 | S1357-1360 | |
| Author | Title of Article | |||
| Y. Matsumuro | Low-temperature preparation of PMN-PT films with high-dielectric constant by laser ablation | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Korean Phys. Soc. | 32 | 1998 | S1625-1628 | |
| Author | Title of Article | |||
| Y. Oishi | Crystalline and electrical properties of SrBi2Ta2O9 thin films prepared by laser ablation | |||
| Journal | Volume | Year | Pages Concerned | |
| 6th Japan-CIS/Baltic Symposium on Ferroelectricity | 3175 | 1998 | 290-294 | |
| Author | Title of Article | |||
| H. Xu | Oriented Sr0.48Ba0.51La0.001Nb2O6 thin films prepared on Pt/Ti/SiO2/Si(100) substrate by pulsed laser deposition | |||
| Journal | Volume | Year | Pages Concerned | |
| 6th Japan-CIS/Baltic Symposium on Ferroelectricity | 1998 | |||
| Author | Title of Article | |||
| W. Xu | Mild hydrothermal synthesis of titanate films: from polycrystalline BaTiO3 to epitaxial PbTiO3 | |||
| Journal | Volume | Year | Pages Concerned | |
| Philosophical Magazine | B77 | 1998 | 177-185 | |
| Author | Title of Article | |||
| M. Okuyama | Dielectric property of ferroelectric-insulator-semiconductor junction | |||
| Journal | Volume | Year | Pages Concerned | |
| Appl. Surf. Sci. | 117/118 | 1997 | 406-412 | |
| Author | Title of Article | |||
| Y. Oishi | Preparation and basic properties of SrBi2Ta2O9 films | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 36 | 1997 | 5896-5899 | |
| Author | Title of Article | |||
| V. Tura | Simulation of switching properties of ferrodlectrics on the basis of dipole lattice model | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 36 | 1997 | 2183-2191 | |
| Author | Title of Article | |||
| L. Zheng | Leakage behavior and distortion of the hysteresis loop in ferroelectric thin films | |||
| Journal | Volume | Year | Pages Concerned | |
| Science in China (Series E) | 40 | 1997 | 126-134 | |
| Author | Title of Article | |||
| D. Ricinschi | Analysis of ferroelectric switching in finite media as a landau-type phase transition | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Phys. Condense Matter | 10 | 1998 | 477-492 | |
| Author | Title of Article | |||
| T. Kanashima | Analysis of Si-H, Si-O-H and Si-O-O-H defects in SiO2 thin films by molecular orbital method | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 36 | 1997 | 1448-1452 | |
| Author | Title of Article | |||
| T. Kanashima | Characterization of F2 treatment effects on Si(100) surface and Si(100)/SiO2 interface | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 36 | 1997 | 2460-2463 | |
| Author | Title of Article | |||
| H. Yamamoto | Surface treatment effects on microscopic Si surface structure and Si-SiO2 interface state | |||
| Journal | Volume | Year | Pages Concerned | |
| Appl. Surf. Sci. | 113/114, | 1997 | 664-669 | |
| Author | Title of Article | |||
| T. Imai | Surface characterization using infrared reflection absorption spectroscopy on Si(100) processed by wet cleaning and gas treatment | |||
| Journal | Volume | Year | Pages Concerned | |
| Appl, Surf. Sci. | 113/114 | 1997 | 398-402 | |
| Author | Title of Article | |||
| W. Xu | Formation of BaTiO3 and PbTiO3 thin films under mild hydrothermal conditions | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Mater. Res. | 1996 | |||
| Author | Title of Article | |||
| W. Wu | Bismuth titanate thin films on Si with buffer layers prepared by laser ablation and their electrical properties | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 35 | 1996 | 1560-1563 | |
| Author | Title of Article | |||
| M. Okuyama | Electron emission from ferroelectric ceramic thin plate by pulsed electric field | |||
| Journal | Volume | Year | Pages Concerned | |
| Journal of the Korean Physical Society | 29 | 1996 | S607-S611 | |
| Author | Title of Article | |||
| Y. Kuratani | Field-Excited electron emission from (1-y)Pb (Mg1/3Nb2/3)O3-yPbTiO3 ceramic | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 35 | 1996 | 5185-5187 | |
| Author | Title of Article | |||
| T. Kanashima | Theoretical analysis of oxygen-excess defects in SiO2 thin film by molecular orbital method | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 35 | 1996 | 1445-1449 | |
| Author | Title of Article | |||
| T. Imai | Surface characterization using infrared reflection absorption spectroscopy on Si(100) processed by wet cleaning and gas treatment | |||
| Journal | Volume | Year | Pages Concerned | |
| Appl. Surf. Sci. | 3981 | 1996 | ||
| Author | Title of Article | |||
| H. Yamamoto | Surface treatment effects on microscopic Si surface structure and Si-SiO2 interface state | |||
| Journal | Volume | Year | Pages Concerned | |
| Appl. Surf. Sci. | 1996 | 4049- | ||
| Author | Title of Article | |||
| T. Imai | Characterization of surface potential and strain at ultrathin oxide/silicon interface by photoreflectance spectroscopy | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 35 | 1996 | 1073-1076 | |
| Author | Title of Article | |||
| C. -H. Lee | Crystallographic structures and parasitic resistances of self-aligned silicide TiSi2/self-aligned nitrided barrier layer/selective chemical vapor deposited aluminum in fully self-aligned metallization metal-oxide-semiconductor field-effect-transistor | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 38 | 1999 | 5835-5838 | |
| Author | Title of Article | |||
| H. Matsuhashi | Self-aligned 10-nm barrier layer formation technology for fully self-aligned metallization metal-oxide-semiconductor field-effect-transistor | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 37 | 1998 | 3264-3267 | |
| Author | Title of Article | |||
| H. Matsuhashi | Mirror-like surface mor-phology of CVD-A1 on TiN by CIF3 pretreatment | |||
| Journal | Volume | Year | Pages Concerned | |
| Proc. of Advanced Metallization and Interconnect Systems for ULSI Applications in 1995 | 1996 | 667-673 | ||
| Author | Title of Article | |||
| Y. Shimamune | Atomic-layer adsorption of P on Si(100) and Ge(100) by PH3 using an ultraclean low-pressure chemical vapor deposition | |||
| Journal | Volume | Year | Pages Concerned | |
| Appl. Surf. Sci. | 162-163 | 2000 | 390-394 | |
| Author | Title of Article | |||
| A. Ichikawa | Epitaxial growth of Si1-x-yGexCy film on Si(100) in a SiH4-GeH4-CH3SiH3 reaction | |||
| Journal | Volume | Year | Pages Concerned | |
| Thin Solid Films | 369 | 2000 | 167-170 | |
| Author | Title of Article | |||
| S. Kobayashi | Segregation and diffusion of impurities from doped Si1-xGex films into silicon | |||
| Journal | Volume | Year | Pages Concerned | |
| Thin Solid Films | 369 | 2000 | 222-225 | |
| Author | Title of Article | |||
| T. Tsuchiya | Drain leakage current and instability of drain current in Si/Si1-xGex MOSFETs | |||
| Journal | Volume | Year | Pages Concerned | |
| Thin Solid Films | 369 | 2000 | 379-382 | |
| Author | Title of Article | |||
| T. Noda | Doping and electrical characteristics of in-situ heavily B-doped Si1-x-yGexCy films epitaxially grown using ultraclean LPCVD | |||
| Journal | Volume | Year | Pages Concerned | |
| Thin Solid Films | 380 | 2000 | 57-60 | |
| Author | Title of Article | |||
| D. Lee | Phosphorus doping in Si1-x-y GexCy Epitaxial Growth by low-pressure chemical vapor deposition using a SiH4-GeH4-CH3SiH3-PH3-H2 Gas system | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys., (in press) | 40 | |||
| Author | Title of Article | |||
| T. Matsuura | Atomic-order layer-by-layer role-share etching of silicon nitride using an electron cyclotron resonance plasma | |||
| Journal | Volume | Year | Pages Concerned | |
| Appl. Phys. Lett. | 74 | 1999 | 3573-3575 | |
| Author | Title of Article | |||
| A. Izena | Low-temperature reaction of CH4 on Si(100) surface | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Crystal Growth | 188 | 1998 | 131-136 | |
| Author | Title of Article | |||
| Y. Yamamoto | Surface reaction of alternately supplied WF6 and SiH4 gases | |||
| Journal | Volume | Year | Pages Concerned | |
| Surf. Sci. | 408 | 1998 | 190-194 | |
| Author | Title of Article | |||
| T. Watanabe | Separation between surface adsorption and reaction of NH3 on Si(100) by flash heating | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 38 | 1999 | 515-517 | |
| Author | Title of Article | |||
| T. Sugiyama | Atomic-layer etching of Ge using an ultraclean ECR plasma | |||
| Journal | Volume | Year | Pages Concerned | |
| Appl. Surf. Sci. | 112 | 1997 | 187-190 | |
| Author | Title of Article | |||
| S. Kobayashi | Initial growth characteristics of germanium on silicon in LPCVD using germane gas | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Crystal Growth | 174, | 1997 | 686-690 | |
| Author | Title of Article | |||
| T. Watanabe | Atomic-layer surface reaction of SiH4 on Ge(100) | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 36 | 1997 | 4042-4045 | |
| Author | Title of Article | |||
| D. K. Nayak | High-mobility strained-Si PMOS FET's | |||
| Journal | Volume | Year | Pages Concerned | |
| IEEE Trans. Electron Devices | 43 | 1996 | 1709-1716 | |
| Author | Title of Article | |||
| S. Miyazaki | Influence of Nitrogen Incorporation in Ultrathin SiO2 on the Structure and Electronic States of the SiO2/Si(100) Interface | |||
| Journal | Volume | Year | Pages Concerned | |
| Appl. Surf. Sci. | 159-160 | 2000 | 75-82 | |
| Author | Title of Article | |||
| W. Mizubayashi | Soft breakdown mechanism in ultrathin gate oxides | |||
| Journal | Volume | Year | Pages Concerned | |
| The Physics and Chemistry of SiO2 and the Si-SiO2 Interface | 4, | 2000 | 409-417 | |
| Author | Title of Article | |||
| Khairurrijal, | Calculation of subband states in a metal-oxide-semiconductor inversion layer with a realistic potential profile | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 38 | 1999 | 1352-1355 | |
| Author | Title of Article | |||
| S. Miyazaki | Photoelectron yield spectroscopy of electronic states at ultrathin SiO2/Si interfaces | |||
| Journal | Volume | Year | Pages Concerned | |
| Microelectronic Engineering | 48 | 1999 | 63-66 | |
| Author | Title of Article | |||
| S. Miyazaki | Electronic defect states at ultrathin SiO2/Si interfaces from photoelectron yield spectroscopy | |||
| Journal | Volume | Year | Pages Concerned | |
| Materials Science in Semiconductor Processing | 2 | 1999 | 185-190 | |
| Author | Title of Article | |||
| S. Miyazaki | Evaluation of gap states in hydrogen-terminated silicon surfaces and ultrathin SiO2/Si interfaces by using photoelectron yield spectroscopy | |||
| Journal | Volume | Year | Pages Concerned | |
| Mat. Res. Soc. Symp. Proc. | 500 | 1998 | 81-86 | |
| Author | Title of Article | |||
| M. Fukuda | Analysis of tunnel current through ultrathin gate oxides | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 37 | 1998 | L1534-L1536 | |
| Author | Title of Article | |||
| Khairurrijal | Analytical modeling of metal oxide semiconductor inversion-layer capacitance | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 38 | 1999 | L30-L32 | |
| Author | Title of Article | |||
| K. Morino | Phosphorous incorporation in ultrathin gate oxides and its impact to the network structure | |||
| Journal | Volume | Year | Pages Concerned | |
| Extended Abstracts of the 1997 International Conference on Solid State Devices and Materials | 1997 | 18-19 | ||
| Author | Title of Article | |||
| H. Iwai | Overview of the ULSI session and chapter | |||
| Journal | Volume | Year | Pages Concerned | |
| International Journal of High Speed Electronics and Systems | 10 | 2000 | 171-173 | |
| Author | Title of Article | |||
| T. Ohguro | Thermal stability of CoSi2 film for CMOS salicide | |||
| Journal | Volume | Year | Pages Concerned | |
| IEEE Transactions on Electron Devices | 47 | 2000 | 2208-2213 | |
| Author | Title of Article | |||
| T. Ohguro | Power Si-MOSFET operating with high efficiency under low supply voltage | |||
| Journal | Volume | Year | Pages Concerned | |
| IEEE Transactions on Electron Devices | 47 | 2000 | 2385-2391 | |
| Author | Title of Article | |||
| J. -S. Goo | An accurate and ef ficient high frequency noise simulation technique for deep submicron MOSFETs | |||
| Journal | Volume | Year | Pages Concerned | |
| IEEE Transactions on Electron Devices | 47 | 2000 | 2410-2419 | |
| Author | Title of Article | |||
| H. S. Momose | Hot-carrier reliability of ultra-thin gate oxide CMOS | |||
| Journal | Volume | Year | Pages Concerned | |
| Solid-State Electronics | 44 | 2000 | 2035-2044 | |
| Author | Title of Article | |||
| H. Nii | An 0.3-mm Si epitaxial base BiCMOS technology with 37-GHz fmax and 10-V BVceo for RF telecommunication | |||
| Journal | Volume | Year | Pages Concerned | |
| IEEE Trans. Electron Devices | 46 | 1999 | 712-721 | |
| Author | Title of Article | |||
| T. Ohguro | An 0.18- μ m CMOS for Mixed Digital and Analog Applications with Zero-Volt-Vth Epitaxial-Channel MOSFET's" | |||
| Journal | Volume | Year | Pages Concerned | |
| IEEE Transactions on Electron Devices | 46 | 1999 | 1378-1383 | |
| Author | Title of Article | |||
| H. Iwai | Outlook of MOS devices into next century | |||
| Journal | Volume | Year | Pages Concerned | |
| Microelectronic Engineering | 48 | 1999 | 7-14 | |
| Author | Title of Article | |||
| T. Yoshitomi | A high performance 0.15 μm buried channel pMOSFET with extremely shallow counter doped channel region using solid phase diffusion | |||
| Journal | Volume | Year | Pages Concerned | |
| Solid State Technology | 43 | 1999 | 1209-1214 | |
| Author | Title of Article | |||
| T. Yoshitomi | A study of self-aligned doped channel MOSFET structure for low power and low 1/f noise operation | |||
| Journal | Volume | Year | Pages Concerned | |
| Solid State Electronics | 43 | 1999 | 1219-1224 | |
| Author | Title of Article | |||
| T. Ohguro | Silicon Epitaxy and Its Application to RFIC's | |||
| Journal | Volume | Year | Pages Concerned | |
| Electrochemical Society Proceedings | 99-18 | 1999 | 123-141 | |
| Author | Title of Article | |||
| T. Ohguro | Ultra-shallow junction and salicide technology for advanced CMOS devices | |||
| Journal | Volume | Year | Pages Concerned | |
| Proc. Symp. on ULSI Science and Technology | 1997 | 275-295 | ||
| Author | Title of Article | |||
| S. Mukaigawa | Measurement of copper drift in methylsilsesquiazane-methylsilsesquioxane dielectric films | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys | 39 | 2000 | 2189-2193 | |
| Author | Title of Article | |||
| T. Ohba | Current Status of 300mm/0.25-0.18um Technologies | |||
| Journal | Volume | Year | Pages Concerned | |
| Proc. 5th Int. Conf. on Solid-State and Integrated Circuit Technol | 1998 | 21-24 | ||
| Author | Title of Article | |||
| A. Tramoto | Time-dependent dielectric breakdown of SiO2 films in a wide electric field range | |||
| Journal | Volume | Year | Pages Concerned | |
| Microelectronics Reliability | 41 | 2001 | 47-52 | |
| Author | Title of Article | |||
| K. Kobayashi | Origin of positive charge generated in thin SiO2 films during high-field electrical stress | |||
| Journal | Volume | Year | Pages Concerned | |
| IEEE Trans. Electron Devices | 46 | 1999 | 947-953 | |
| Author | Title of Article | |||
| A. Nozoe | A 256-Mb multilevel flash memory with 2-MB/s program rate for mass storage applications | |||
| Journal | Volume | Year | Pages Concerned | |
| IEEE J. Solid-State Circuits | 34 | 1999 | 1544-1550 | |
| Author | Title of Article | |||
| K. Kobayashi | Impact of thermal nitridation on electron and hole trap generation in silicon dioxides | |||
| Journal | Volume | Year | Pages Concerned | |
| Int. Symp. on Advanced ULSI Tech. (ISAUT), Toyo Univ. | 1998 | 31-34 | ||
| Author | Title of Article | |||
| T. Ogata | Impact of nitridation engineering on microscopic SILC characteristics of sub-10-nm tunnel dielectrics | |||
| Journal | Volume | Year | Pages Concerned | |
| Int. ELECTRON DEVICES meeting | 1998 | 597-600 | ||
| Author | Title of Article | |||
| K. Kobayashi | Electron traps and excess current induced by hot-hole injection into thin SiO2 films | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Electrochem. Soc. | 143 | 1996 | 3377-3383 | |
| Author | Title of Article | |||
| T. Nakano | Effects of Ar dilution on the optical emission spectra of fluorocarbon ultra-high frequency plasmas | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Vac. Sci. Technol. | A17 | 1999 | 686-691 | |
| Author | Title of Article | |||
| S. Samukawa | Effects of rare gas dilution on dissociation and ionization in fluorocarbon gas plasma | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Vac. Sci. Technol. | A17 | 1999 | 500-505 | |
| Author | Title of Article | |||
| S. Samukawa | Degree of Cl2 dissociation and etching characteristics in high-density plasmas | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Vac. Sci. Technol. | A17 | 1999 | 774-779 | |
| Author | Title of Article | |||
| A. Yokozawa | Simulation for variations in the negative ion density in a pulse time-modulated Cl2 plasma | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 38 | 1999 | 4437-4477 | |
| Author | Title of Article | |||
| S. Samukawa | New radical-control method for high performance SiO2 etching with non-perfluorocarbon gas chemistries | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Vac. Sci. Technol. | A17 | 1999 | 2551-2556 | |
| Author | Title of Article | |||
| S. Samukawa | New gas chemistries for high-performance and chargeless dielectric etchings | |||
| Journal | Volume | Year | Pages Concerned | |
| Materials Science in Semiconductor Processing | 1.2 | 1999 | 203-208 | |
| Author | Title of Article | |||
| S. Samukawa | Differences of radical generation on chemical bonding of gas molecule in high-density fluorocarbon plasma | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Vac. Sci. Technol. | A17 | 1999 | 2463-2466 | |
| Author | Title of Article | |||
| B. Mebarki | Polycrystalline film formation at low temperature using ultra-high frequency plasma system | |||
| Journal | Volume | Year | Pages Concerned | |
| Materials Letters | 41 | 1999 | 16-19. | |
| Author | Title of Article | |||
| M. V. Malyshev | Dynamics of pulsed-power chlorine plasma | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Appl. Phys. | 186 | 1999 | 4813-4820 | |
| Author | Title of Article | |||
| T. Nakano | The correlation between an electric field and the metastable chlorine ion density distributions in an UHF plasma | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 37 | 1998 | 2686- | |
| Author | Title of Article | |||
| T. Nakano | Radial distributions of ion velocity, temperature, and density in UHF, ICP and ECR | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Vac. Sci. Technol. | A16 | 1998 | 2065- | |
| Author | Title of Article | |||
| H. Ohtake | Enhancement of reactivity in Au etching by pulse-time-modulated Cl2 plasma | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 37 | 1998 | 2311 | |
| Author | Title of Article | |||
| S. Samukawa | Effects of discharge frequency on plasma characteristics in high density Cl2 plasma | |||
| Journal | Volume | Year | Pages Concerned | |
| IEEE Trans. Plasma Sci. | 26 | 1998 | 1621- | |
| Author | Title of Article | |||
| M. V. Malyshev | Comparison of Cl and Cl2 concentrations and electron temperatures measured by trace rare gases optical emission spectroscopy | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Appl. Phys. | 84 | 1998 | 1222- | |
| Author | Title of Article | |||
| S. Samukawa | Effects of degree of dissociation on Al etching characteristics in high density Cl2 plasma | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 37 | 1999 | L1036- | |
| Author | Title of Article | |||
| S. Samukawa | New radical injection method for SiO2 etching with non-perfluorocomponud gas chemistries | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys | 37 | 1998 | L1095- | |
| Author | Title of Article | |||
| S. Inumiya | Sub-1.3nm amorpho us tantalum pentoxide gate dielectrics for damascene metal gate transistors | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys | 2000 | 2087-2093 | ||
| Author | Title of Article | |||
| T. Sait | Plasma-damage-free gate process using chemical mechanical polishing for 0.1 μ m MOSFETs | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 1999 | 2227-223 | ||
| Author | Title of Article | |||
| A. Yagishita | High performance damascene metal gate MOSFETs for 0.1 μ m regime | |||
| Journal | Volume | Year | Pages Concerned | |
| IEEE Trans. Electron. Devices | 2000 | 1028-1034 | ||
| Author | Title of Article | |||
| K. Nakajima | Formation mechanism of ultrathin WSiN barrier layer in a W/WNx/Si system | |||
| Journal | Volume | Year | Pages Concerned | |
| Appl. Surf. Sci. | 117/118 | 1997 | 312-316 | |
| Author | Title of Article | |||
| T. Kijima | Preparation of Bi4 Ti3 O12 thin films on Si(100) substrate using Bi2 SiO5 buffer layer and its electrical characterization | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 37 | 1998 | 5171-5173 | |
| Author | Title of Article | |||
| T. Kijima | New low-temperature processing of metalorganic chemical vapor deposition-Bi4 Ti3 O12 thin films using BiOx buffer layer | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 38 | 1999 | 127-130 | |
| Author | Title of Article | |||
| T. Kijima | Low temperature preparation of fatigue free Bi4 Ti3 O12 thin films by MOCVD and their electrical properties | |||
| Journal | Volume | Year | Pages Concerned | |
| Proceeding of the Tenth IEEE, International Symposium on Applications of Ferroelectrics | 1996 | |||