| 1.Research Institution | Hachinohe Institute of Technology | |
| 2.Research Area | Physical and Engineering Sciences | |
| 3.Research Field | Exploratory Research on Novel Artificial Materials and Substances for Next-Generation Industries | |
| 4.Term of Project | FY1996〜FY2000 | |
| 5.Project Number | 96P00105 | |
| 6.Title of Project | High Performance Multi-Functional Transducers of Dielectric Composite Films |
| Name | Institution,Department | Title of Position |
| Masuda, Yoichiro | Hachinohe Inst. Tech., Dept. Eng. | Prof. |
8.Core Members
| Names | Institution,Department | Title of Position |
| Tsukamoto, Takeyo | Sci. Uni. Tokyo, Faculty of Sci. | Prof. |
| Shiosaki, Tadashi | Nara Inst. Sci. Tech., Grad. School of Mater. Sci. | Prof. |
| Okada, Masuo | Tohoku Univ., Grad. School of Eng. | Prof. |
9.Cooperating Researchers
| Names | Institution,Department | Title of Position |
| Fujita, Shigetaka | Hachinohe Inst. Tech., Dept. Eng. | Prof. |
| Sugai, Hiroshi | Research Inst. for Electric and Magnetic Mater. | Seni. Researcher |
| Masumoto, Hiroshi | Tohoku Univ., Inst. Mater. Research | Associate Prof. |
10.Summary of Research Results
|
Pb(Zr,Ti)O3(PZT), SrBi2Ta2O9(SBT), and modified BaTiO3(BT) system ferroelectric thin films with well-controlled stoichiometry and microstructure in an atomic-molecular level have been successfully synthesized through physical routes by rf magnetron sputtering and pulsed laser deposition (PLD) methods, and also via chemical routes due to MOCVD, Sol-Gel, Langmuir-Blodgett (LB) methods. Appearance and fatigue mechanisms of ferroelectricity in the thin films were precisely analyzed from a scientific perspective. Further, technology for synthesis of highly functional ferroelectric thin-film devices was developed for application to semiconductor manufacturing process. The principal fruits resulting from our research project are briefly summarized as follows: (1) development of ecological non-lead BTHZ thin film by substitution of small amounts of Hf and Zr for Ti site, which showing superior ferroelectric properties to BT, (2) new design of antiferroelectric-ferroelectric multi thin-film structure, (3) development of ultra thin-film structure with thickness of 30 nm or less by LB methods, (4) confirmation of ferroelectricity in an island structure at early film deposition periods, (5) application of thermally stimulated current (TSC) methods for precise description of electric polarization fatigue mechanism, (6) synthesis of new kinds of oxide thin-film electrodes which enhance the resistance to electric polarization fatigue, (7) establishment of X-ray analysis methods for quantitative thin-film analysis, (8) development of micro manufacturing process of integrated thin-film device structure by electron-beam induced reactions, (9) synthesis of Si-based buffer layer which works a fusion layer between ferroelectric thin-film and semiconductor, (10) evaluation of piezo-electric response of ferroelectric thin film which is applicable to micro actuator, (11) development of new photoconductivity-ferroelectric memory device using pyroelectricity of ferroelectric thin film. |
11.Key Words
(1)Ferroelectric Thin Film、(2)Multi-Functional Transducer、(3)Microstructural Control
(4)Ferroelectric Random Access Memory、(5)Ultra Thin Film、(6)Electric Polarization Fatigue
(7)Oxide Electrode、(8)Piezoelectricity、(9)Pyroelectricity
12.References
| Author | Title of Article | |||
| S. Okamura, G. Fujihashi, Y. Yagi, S. Ando, K. Mori and T. Tsukamoto | Fabrication of Ferroelectric Bi4Ti3O12 Thin Films by Electron Beam Heating Evaporation | |||
| Journal | Volume | Year | Pages Concerned | |
| Trans. Mater. Res. Soc. Jpn. | 20 | 1996 | 615-618 | |
| Author | Title of Article | |||
| M. Shimizu and T. Shiosaki | Growth and Characterization of Pb-based Ferroelectric Oxide Thin Films by MOCVD | |||
| Journal | Volume | Year | Pages Concerned | |
| Mat. Res. Soc. Symp. Proc. | 401 | 1996 | 129-138 | |
| Author | Title of Article | |||
| M. Shimizu, S. Hyodo, H. Fujisawa and T. Shiosaki | Step Coverage Pb(Zr, Ti)O3 Thin Films Grown by MOCVD | |||
| Journal | Volume | Year | Pages Concerned | |
| Mat. Res. Soc. Symp. Proc. | 433 | 1996 | 201-206 | |
| Author | Title of Article | |||
| W. Wang, Z. Chen, M. Adachi and A. Kawabata | Preparation of Zr-Rich PZT and La-Doped PbTiO3 Thin Films by RF Magnetron Sputtering and Their Properties for Pyroelectric Applications | |||
| Journal | Volume | Year | Pages Concerned | |
| Integrated Ferroelectrics | 12 | 1996 | 251-261 | |
| Author | Title of Article | |||
| Y. Masuda, Y. Kidachi, A. Baba, H. Masumoto, T. Goto and T. Hirai | Ferroelectric and Optical Properties of Ba2NaNb5O15 Thin Films | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Korean Phys. Soc. | 29 | 1996 | S664-667 | |
| Author | Title of Article | |||
| T. Hidaka, T. Maruyama, M. Saitoh, N. Mikoshiba, M. Shimizu, T. Shiosaki, L. A. Wills, R. Hiskes, S. A. Dicarolis and J. Amano | Formation and Observation of 50 nm Polarized Domains in PbZr1-xTixO3 Thin Films Using Scanning Probe Microscope | |||
| Journal | Volume | Year | Pages Concerned | |
| Appl. Phys. Lett. | 68 | 1996 | 2358-2359 | |
| Author | Title of Article | |||
| H. Fujisawa, M. Shimizu, T. Horiuchi, T. Shiosaki and K. Matsushige | Dependence of Crystalline Structure and Lattice Parameters on Film Thickness in PbTiO3/Pt/MgO Epitaxial Structure | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 35 | 1996 | 4913-4918 | |
| Author | Title of Article | |||
| T. Iijima and N. Sanada | Ferroelectric Properties of Sol-Gel Derived PbTiO3 Type Thin Films | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 35 | 1996 | 4930-4932 | |
| Author | Title of Article | |||
| S. Ando, Y. Nakamura, T. Togami, S. Okamura, A. Baba, Y. Masuda and T. Tsukamoto | Ba2NaNb5O15 Thin Films Prepared by Pulsed Laser Ablation Method | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 35 | 1996 | 4956-4959 | |
| Author | Title of Article | |||
| R. C. Ibrahim, T. Sakai, T. Nishida, T. Horiuchi, T. Shiosaki and K. Matsushige | Characterization of Niobium-Doped Lead Titanate Thin Films | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 35 | 1996 | 4995-4998 | |
| Author | Title of Article | |||
| Y. Masuda and A. Baba | Oxidation and Heat Treatment Effect on Crystal Structure and Electrical Conductivity of Ferroelectric Pb(Zr, Ti)O3 Films | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 35 | 1996 | 5002-5007 | |
| Author | Title of Article | |||
| S. Okamura, Y. Yagi, K. Mori, A. Kakimi, S. Ando and T. Tsukamoto | Crystallization of Precursor Micropatterns of Ferroelectric Formed by an Electron Beam | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 35 | 1996 | 5224-5228 | |
| Author | Title of Article | |||
| S. Okamura, Y. Yagi, K. Mori, A. Kakimi, S. Ando and T. Tsukamoto | Micro Patterning of Ferroelectric Bi4Ti3O12 Using Electron-Beam-Induced Reaction of Metal Octylate Films | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 35 | 1996 | 6579-6583 | |
| Author | Title of Article | |||
| G. Fujihashi, A. Kakimi, S. Ando, S. Okamura, T. Tsuchiya and T. Tsukamoto | Characterizations of Ba2NaNb5O15 Thin Films prepared by Sol-Gel Method | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Ceram. Soc. Jpn. | 105 | 1997 | 449-451 | |
| Author | Title of Article | |||
| Y. Masuda, H. Masumoto, A. Baba, Y. Kidachi and T. Hirai | Ferroelectric Properties of Ba2NaNb5O15 Films by RF Magnetron Sputtering Method | |||
| Journal | Volume | Year | Pages Concerned | |
| Ferroelectrics | 195 | 1997 | 297-304 | |
| Author | Title of Article | |||
| M. Shimizu, H. Fujisawa and T. Shiosaki | Effects of La and Nb Modification on the Electrical Properties of Pb(Zr, Ti)O3 Thin Films by MOCVD | |||
| Journal | Volume | Year | Pages Concerned | |
| Integrated Ferroelectrics | 14 | 1997 | 69-75 | |
| Author | Title of Article | |||
| S. Ando, K. Konakahara and T. Tsukamoto | Laser Energy Density and O2 Gas Pressure Effects on the Fabrication of Ba2NaNb5O15 Thin Films by Pulsed Laser Ablation | |||
| Journal | Volume | Year | Pages Concerned | |
| Ferroelectrics | 218 | 1998 | 223-232 | |
| Author | Title of Article | |||
| T. Nishida, T. Shiosaki, T. Horiuchi and K. Matsushige | Preparation of LiNbO3 Thin Film by Bias Sputtering | |||
| Journal | Volume | Year | Pages Concerned | |
| Ferroelectrics | 219 | 1998 | 9-13 | |
| Author | Title of Article | |||
| T. Shiosaki and M. Shimizu | Pb-based and Bi-Based Ferroelectric Thin Films | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Korean Phys. Soc. | 32 | 1998 | S1316-1320 | |
| Author | Title of Article | |||
| M. Shimizu, H. Fujisawa, S. Hyodo, S. Nakashima, H. Niu, H. Okino and T. Shiosaki | Pb(Zr, Ti)O3 Thin Film Deposition on Ir and IrO2 Electrodes by MOCVD | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Korean Phys. Soc. | 32 | 1998 | S1349-1352 | |
| Author | Title of Article | |||
| Y. Masuda, S. Fujita, A. Baba, H. Masumoto, T. Hirai and K. Nagata | BaTi0.91(Hf0.5Zr0.5)0.09 O3 Thin Films Prepared by Nd3+: YAG (1=266 nm) Laser Ablation | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Korean Phys. Soc. | 32 | 1998 | S1372-1374 | |
| Author | Title of Article | |||
| T. Nishida, T. Horiuhi, T. Shiosaki and K. Matsushige | Evaluations of In-plane Orientation of LiNbO3 Films Using an Energy Dispersive Total-Reflection X-ray Diffractometer | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Korean Phys. Soc. | 32 | 1998 | S1622-1624 | |
| Author | Title of Article | |||
| T. Iijima, J. Onagawa and N. Sanada | Effect of Film Thickness on Ferroelectric Properties of Sol-Gel Derived Pb(Ti, Nb)O3 Type Thin Films | |||
| Journal | Volume | Year | Pages Concerned | |
| Integrated Ferroelectrics | 20 | 1998 | 129-140 | |
| Author | Title of Article | |||
| W. Wang, Z. Chen, M. Adachi and A. Kawabata | Preparation of Zr-Rich Pb(ZrxTi1-x)O3 Thin Films and Their Properties | |||
| Journal | Volume | Year | Pages Concerned | |
| Integrated Ferroelectrics | 20 | 1998 | 191-203 | |
| Author | Title of Article | |||
| T. Nishida, K. Ishida, T. Horiuhi, T. Shiosaki and K. Matsusige | In-Plane Observations of LiNbO3 Thin Films by Energy Dispersive Total-Reflection X-Ray Diffractometer | |||
| Journal | Volume | Year | Pages Concerned | |
| Integrated Ferroelectrics | 20 | 1998 | 243-244 | |
| Author | Title of Article | |||
| T. Tsukamoto and S. Ando | Ferroelectric Bi4Ti3O12 Thin Films with c-axis Orientation | |||
| Journal | Volume | Year | Pages Concerned | |
| Integrated Ferroelectrics | 20 | 1998 | 257-258 | |
| Author | Title of Article | |||
| H. Fujisawa, S. Hyodo, K. Jitsui, M. Shimizu, H. Niu, H. Okino and T. Shiosaki | Electrical properties of PZT Thin Films on Ir/IrO2 Bottom Electrodes by MOCVD | |||
| Journal | Volume | Year | Pages Concerned | |
| Integr. Ferroelctr. | 21 | 1998 | 107-114 | |
| Author | Title of Article | |||
| Y. Fukuda, K. Numata, K. Aoki, A. Nishimura, G. Fujihashi, S. Okamura, S. Ando and T. Tsukamoto | Effects of Postannealing in Oxygen Ambient on Leakage Properties (Ba, Sr)TiO3 Thin-Film Capacitors | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 38 | 1998 | L453-L455 | |
| Author | Title of Article | |||
| R. C. Ibrahim, T. Horiuchi, T. Shiosaki and K. Matsushige | Highly Oriented Nb-Doped Lead Titanate Thin Films by Reactive Sputtering:Fabrication and Structure Analyses | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 37 | 1998 | 4539-4543 | |
| Author | Title of Article | |||
| W. Wang, T. Karaki and M. Adachi | Preparation and Electrical Properties of Sol-Gel Derived Zr-rich Pb(Zr, Ti)O3 Thin Films | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 38 | 1998 | 4910-4913 | |
| Author | Title of Article | |||
| H. Sugai, N. Hoshi, T. Iijima and H. Masumoto | Preparation of Lead Titanate Thin Films Using Langmuir-Blodgett Method | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 37 | 1998 | 5118-5122 | |
| Author | Title of Article | |||
| H. Fujisawa, M. Yoshida, M. Shimizu and H. Niu | Influence of the Purity of Source Precursors on the Electrical Properties of Pb(Zr, Ti)O3 Thin Films Prepared by Metalorganic Chemical Vapor Deposition | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 37 | 1998 | 5132-5136 | |
| Author | Title of Article | |||
| H. Okino, Y. Toyoda, M. Shimizu, T. Horiuchi, T. Shiosaki and K. Matsushige | Thermally Stimulated Current and Polarization Fatigue in Pb(Zr, Ti)O3 Thin Films | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 37 | 1998 | 5137-5140 | |
| Author | Title of Article | |||
| S. Ando, K. Konakahara, S. Okamura and T. Tsukamoto | Growth of Ba2NaNb5O15 Thin films on MgO(100) by the Pulsed Laser Ablation | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 37 | 1998 | 5211-5214 | |
| Author | Title of Article | |||
| H. Fujisawa, S. Nakashima, M. Shimizu and H. Niu | Control of Grain Size of Pb(Zr, Ti)O3 Thin Films by MOCVD and the Effect of Size on the Electrical Properties | |||
| Journal | Volume | Year | Pages Concerned | |
| Mat. Res. Soc. Symp. Proc. | 541 | 1999 | 327-332 | |
| Author | Title of Article | |||
| M. Shimizu, M. Yoshida, H. Fujisawa and H. Niu | Effects of the Purity of Metalorganic Sources on the Electrical Properties of Pb(Zr, Ti)O3 Thin Films by MOCVD | |||
| Journal | Volume | Year | Pages Concerned | |
| Mat. Res. Soc. Symp. Proc. | 541 | 1999 | 411-416 | |
| Author | Title of Article | |||
| Y. Masuda, S. Fujita, T. Nishida, H. Masumoto, T. Hirai | Degradation of Perovskite Pb(Zr, Ti) Thin Films Fabricated by Pulsed Laser Ablation | |||
| Journal | Volume | Year | Pages Concerned | |
| Bull. Hachinohe Inst. Tech. | 18 | 1999 | 59-65 | |
| Author | Title of Article | |||
| A. Watazu, F. Usui, H. Masumoto, Y. Masuda, A. Baba, T. Goto and T. Hirai | Preparation of c-axis Oriented Ba2NaNb5O15 Thin Films on Sapphire (012) Substrate and their Properties (in Japanese) | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Jpn. Soc. Powder and Powder Metall. | 46 | 1999 | 909-913 | |
| Author | Title of Article | |||
| S. Okamura and T. Shiosaki | Properties of Micropatterned Ferroelectric Thin Films Fabricated by Electron Beam Exposed Chemical Solution Deposition Process | |||
| Journal | Volume | Year | Pages Concerned | |
| Ferroelectrics | 232 | 1999 | 15-24 | |
| Author | Title of Article | |||
| S. Ando, S. Okamura and T. Tsukamoto | Preparation of Ba2NaNb5O15 Thin Films by Pulsed Laser Ablation Method and Their Characterization | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Eur. Ceram. Soc. | 19 | 1999 | 1369-1372 | |
| Author | Title of Article | |||
| J. Thongrueng, T. Tsuchiya, Y. Masuda, S. Fujita and K. Nagata | Properties and Degradation of Polarization Reversal of Soft BaTiO3 Ceramics for Ferroelectric Thin-Film Devices | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 38 | 1999 | 5309-5313 | |
| Author | Title of Article | |||
| H. Sugai, T. Iijima and H. Masumoto | Preparation of Lead Titanate Ultrathin Film Using Langmuir-Blodgett Film as Precursor | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 38 | 1999 | 5322-5325 | |
| Author | Title of Article | |||
| T. Nishida, S. Okamura, T. Shiosaki, S. Fujita and Y. Masuda | Preparation of La-modified Lead Titanate Film Capacitors and Influence of SrRuO3 Electrodes on the Electrical Properties | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 38 | 1999 | 5337-5341 | |
| Author | Title of Article | |||
| S. Okamura, S. Miyata, Y. Mizutani, T. Nishida and T. Shiosaki | Conspicuous Voltage Shift and Asymmetry Depolarization of Pb-Based Ferroelectric Thin Films | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 38 | 1999 | 5364-5367 | |
| Author | Title of Article | |||
| H. Okino, T. Nishikawa, M. Shimizu, T. Horiuchi and K. Matsushige | Electrical Properties oh Highly Strained Epitaxial Pb(Zr, Ti)O3 Thin Films on MgO(100) | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 38 | 1999 | 5388-5391 | |
| Author | Title of Article | |||
| H. Fujisawa, S. Nakashima, K. Kaibara, M. Shimizu and H. Niu | Size Effects of Epitaxial and Polycrystalline Pb(Zr, Ti)O3 Thin Films Grown by Metalorganic Chemical Vapor Deposition | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 38 | 1999 | 5392-5396 | |
| Author | Title of Article | |||
| T. Futakuchi, Y. Matsui and M. Adachi | Preparation of PbZrO3-PbTiO3-Pb(Mg1/3Nb2/3)O3 Thick Films by Screen Printing | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 38 | 1999 | 5528-5530 | |
| Author | Title of Article | |||
| W. Wang, T. Fujii, T. Karaki and M. Adachi | Preparation and Electrical Properties of Rhombohedral Pb(ZrxTi1-x)O3 Thin Films by RF Magnetron Sputtering Method | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 38 | 1999 | 6807-6811 | |
| Author | Title of Article | |||
| M. Shimizu, M. Yoshida, H. Fujisawa and H. Niu | Effects of the Purity of Ti Source Precursor on the Electrical Properties of Pb(Zr, Ti)O3 Thin Films Prepared by MOCVD | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Korean Phys. Soc. | 35 | 1999 | S1529-1531 | |
| Author | Title of Article | |||
| W. Wang, M. Fukui, T. Fujii, T. Karaki ans M. Adachi | Electrical Properties of Ziruconium-Rich PZT Thin Films by RF Magnetron Sputterin | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Korean Phys. Soc. | 35 | 1999 | S1532-1536 | |
| Author | Title of Article | |||
| H. Masumoto, S. Hiboux and P. Muralt | Preparation of La1-xSrxCoO3 Electrodes for Ferroelectric Thin Films by RF Magnetron Sputtering | |||
| Journal | Volume | Year | Pages Concerned | |
| Ferroelectrics | 225 | 1999 | 335-341 | |
| Author | Title of Article | |||
| Y. Masuda, S. Fujita and T. Nishida | Temperature and Voltage Dependance in PZT Ferroelectric Thin Film Capacitors | |||
| Journal | Volume | Year | Pages Concerned | |
| Ferroelectrics | 232 | 1999 | 59-64 | |
| Author | Title of Article | |||
| K. Nagata, J. Thongrueng, T. Tsuchiya, Y. Masuda and S. Fujita | Properties of Soft BaTiO3 Ceramics for Ferroelectric Thin Film Devices | |||
| Journal | Volume | Year | Pages Concerned | |
| Key Eng. Mater. | 169-170 | 1999 | 119-122 | |
| Author | Title of Article | |||
| T. Iijima, N. Sanada, K. Hiyama, H. Tsuboi and M. Okada | Preparation of Al Doped PZT Thin Films Using a Sol-Gel Method | |||
| Journal | Volume | Year | Pages Concerned | |
| Mat. Res. Soc. Symp. Proc. | 596 | 2000 | 223-228 | |
| Author | Title of Article | |||
| M. Shimizu, H. Fujisawa and H. Niu | Thickness Dependence of Crystalline and Electrical Properties of PZT Ultrathin Films Grown on SrRuO3/SrTiO3 by MOCVD | |||
| Journal | Volume | Year | Pages Concerned | |
| Mat. Res. Soc. Symp. Proc. | 596 | 2000 | 259-264 | |
| Author | Title of Article | |||
| H. Fujisawa, M. Shimizu, H. Niu, K. Honda and S. Ohtani | Observations of Domain Structure at Initial Growth Stage of PbTiO3 Thin Films Grown by MOCVD | |||
| Journal | Volume | Year | Pages Concerned | |
| Mat. Res. Soc. Symp. Proc. | 596 | 2000 | 321-326 | |
| Author | Title of Article | |||
| Y. Masuda, S. Fujita, T. Nishida | Preparation and Electrical Properties of PZT Thin Film Capacitors for Ferreelectric Random Access Memory | |||
| Journal | Volume | Year | Pages Concerned | |
| Bull. Hachinohe Inst. Tech. | 19 | 2000 | 41-49 | |
| Author | Title of Article | |||
| N. Ikeda, A. Kamegawa, H. Takamura and M. Okada | Dielectric Properties of Nb-Doped PbZrO3 Thin Films Prepared by Pulsed Laser Deposition | |||
| Journal | Volume | Year | Pages Concerned | |
| Materials Transactions, JIM | 41 | 2000 | 589-592 | |
| Author | Title of Article | |||
| E. Buixaderas, S. Kamba, J. Petzelt, M. Wada and S. Ando | Infrared Spectroscopy of Ba2NaNb5O15 | |||
| Journal | Volume | Year | Pages Concerned | |
| Ferrolectrics | 239 | 2000 | 17-24 | |
| Author | Title of Article | |||
| M. Shimizu, S. Nakashima, K. Kaibara, H. Fujisawa and H. Niu | Effects of Film Thickness and Grain Size on the Electrical Properties of Pb(Zr, Ti)O3 Thin Films Prepared by MOCVD | |||
| Journal | Volume | Year | Pages Concerned | |
| Ferrolectrics | 241 | 2000 | 183-190 | |
| Author | Title of Article | |||
| W. Wang, T. Karaki and M. Adachi | Principle of Photoconductive Ferroelectric Memory and Preliminary Experiments | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 39 | 2000 | 4853-4859 | |
| Author | Title of Article | |||
| H. Kakemoto, K. Kakimoto, S. Fujita and Y. Masuda | Preparation and Ferroelectric Properties of Ti-Site Substituted BaTiO3 Thin Film | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 39 | 2000 | 5374-5378 | |
| Author | Title of Article | |||
| J. Thongrueng, K. Nishio, K. Nagata and T. Tsuchiya | Preparation and Characterization of Ferroelectric BaTi0.91(Hf0.5, Zr0.5)0.09O3 thin Films by Sol-Gel Process Using Titanium and Zirconium Alkoxides | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 39 | 2000 | 5393-5398 | |
| Author | Title of Article | |||
| T. Iijima, He, Z. Wang, K. Hiyama, H. Tsuboi, M. Okada | Ferroelectric Properties of Al-doped Lead Titanate Ziruconate Thin Films Prepared by Chemical Solution Deposition Process | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 39 | 2000 | 5426-5428 | |
| Author | Title of Article | |||
| H. Fujisawa, K. Morimoto, M. Shimizu, H. Niu, K. Honda and S Ohtani | Observation of Island Structures at the Initial Growth Stage of PbZrxTi1-xO3 Thin films Prepared by Metalorganic Chemical Vapor Deposition | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 39 | 2000 | 5446-5450 | |
| Author | Title of Article | |||
| M. Kobune, O. Matsuura, T. Matsuzaki, A. Mineshige, S. Fhjii, H. Fujisawa, M. Shimizu and H. Niu | Effects of Pt/SrRuO3 Top Electrodes on Ferroelectric Properties of Epitaxial (Pb, La)(Zr, Ti)O3 Thin Films | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 39 | 2000 | 5451-5455 | |
| Author | Title of Article | |||
| S. Okamura, M. Takaoka, T. Nishida and T. Shiosaki | Increase in Switching Charge of Ferroelectric SrBi2Ta2O9 Thin Films with Polarization Reversal | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 39 | 2000 | 5481-5484 | |
| Author | Title of Article | |||
| M. Yamaguchi, K. Hiraki, T. Nagatomo and Y. Masuda | Preparation and Properties of Bi2SiO5/Si Structures | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 39 | 2000 | 5512-5516 | |
| Author | Title of Article | |||
| J. Thongrueng, K. Nishio, Y. Watanabe, K. Nagata and T. Tsuchiya | Preparation and Properties of Soft BaTiO3 Thin Films by Sol-Gel Process | |||
| Journal | Volume | Year | Pages Concerned | |
| Key Eng. Mater. | 181-182 | 2000 | 85-88 | |
| Author | Title of Article | |||
| H. Kakemoto, S. Fujita and Y. Masuda | Characterization of BaTi0.91(Hf0.5, Zr0.5)0.09O3 Films Fabricated by Laser Ablation Technique | |||
| Journal | Volume | Year | Pages Concerned | |
| Key Eng. Mater. | 181-182 | 2000 | 89-92 | |
| Author | Title of Article | |||
| K. Kakimoto, H. Kakemoto and Y. Masuda | Evaluation for Compositional Deviation between PZT Bulk Target and its Thin Film Synthesized by YAG Laser Deposition (in Japanese) | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Ceram. Soc. Jpn. | 109 | 2001 | 152-158 | |
| Author | Title of Article | |||
| T. Shiosaki, S. Okamura and T. Nishida | Influence of Substrate, Thermal, Electric and Aging Treatment on P-E Hysteresis of Ferroelectric Thin Films | |||
| Journal | Volume | Year | Pages Concerned | |
| Integrated Ferroelectrics, to be appeared | ||||
| Author | Title of Article | |||
| S. Okamura, T. Hayama, T. Kobayashi, T. Nishida and T. Shiosaki | Electrical Properties of Patterned Ferroelectric Thin Films Fabricated by Electron-Beam-Induced Micropatterning Process | |||
| Journal | Volume | Year | Pages Concerned | |
| Integrated Ferroelectrics, to be appeared | ||||
| Author | Title of Article | |||
| T. Nishida, M. Takaoka, S. Okamura and T. Shiosaki | Low Temperature Fabrication of Ferroelectric SrBi2Ta2O9 Thin Films by Chemical Solution Deposition | |||
| Journal | Volume | Year | Pages Concerned | |
| Integrated Ferroelectrics, to be appeared | ||||
| Author | Title of Article | |||
| Y. Masuda, S. Fujita and H. Kakemoto | Preparation and Ferroelectric Properties of BaTiO3 Related Thin Film | |||
| Journal | Volume | Year | Pages Concerned | |
| Bull. Hachinohe Inst. Tech., to be appeared | ||||
| Author | Title of Article | |||
| K. Kakimoto, S. Fujita and Y. Masuda | Ferroelectric SrxBa1-xNb2O6 Synthesized by YAG Laser Deposition | |||
| Journal | Volume | Year | Pages Concerned | |
| Bull. Hachinohe Inst. Tech., to be appeared | ||||
| Author | Title of Article | |||
| Y. Masuda, H. Kakemoto and S. Fujita | Ferroelectric properties of BaTi0.91(Hf0.5, Zr0.5)0.09O3 film synthesized by pulsed laser deposition method | |||
| Journal | Volume | Year | Pages Concerned | |
| Applied Physics A, accepted for publication | ||||
| Author | Title of Article | |||
| T. Iijima, H. Nafe and F. Aldinger | Ferroelectric Properties of Al and Nb Doped PbTiO3 Thin Films Prepared by Chemical Solution Deposition Process | |||
| Journal | Volume | Year | Pages Concerned | |
| Integrated Ferroelectrics, accepted for publication | ||||
| Author | Title of Article | |||
| T. Iijima, B. P. Zhang and N. Sanada | Fabrication of Texture Controlled Lead Zirconate Titanate Film Actuator | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Adv. Sci., accepted for publication | ||||
| Author | Title of Article | |||
| K. Kakimoto, H. Kakemoto, A. Baba, S. Fujita and Y. Masuda | Synthesis and Dielectric Properties of SrxBa1-xNb2O6 Formed by YAG Laser Ablation | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Eur. Ceram. Soc., accepted for publication. | ||||