| 1.Research Institution | Waseda University | |
| 2.Research Area | Physical and Engineering Science | |
| 3.Research Field | Exploratory Research on Novel Artificial Materials and Substances for Next-Generation Industries | |
| 4.Term of Project | FY1996〜FY2000 | |
| 5.Project Number | 96P00103 | |
| 6.Title of Project | Semiconductor Quantum Dot Network |
| Name | Institution,Department | Title of Position |
| Horikoshi, Yoshiji | Waseda University, Dept. of Electrical Electronics and Computer Engineering | Professor |
8.Core Members
| Names | Institution,Department | Title of Position |
| Ando, Tsuneo | Tokyo University, Institute of Solid State Physics | Professor |
| Hirayama, Yoshiro | NTT Basic Research Laboratories | Group Leader |
9.Cooperating Researchers
| Names | Institution,Department | Title of Position |
| Yoshino, Junji | Tokyo Institute of Technology | Professor |
| Ando, Seigo | NTT Basic Research Laboratories | Research Staff |
| Sota, Takayuki | Waseda University, Dept. of Electrical, Electronics and Computer Engineering | Professor |
10.Summary of Research Results
|
The purpose of our project is to find new phenomena and new functions from nanoscale structures composed of conventional semiconductors. To fabricate nanoscale structures, we employ new epitaxial growth techniques, we have developed before, such as flow-rate modulation epitaxy (FME) and migration-enhanced epitaxy (MEE), and also we use convention e-beam and photolithography. Throughout this work, special attention has been paid to achieve accurate and uniform geometrical structures. Therefore, so-called "self-organization technique" is not used in this work. For semiconductor nanoscale structures, we focus on the optical waveguide networks which are composed of micro-disc lasers and small area detectors connected by low-loss optical waveguides using GaAs and AlGaAs, and on the quantum dot networks, or two-dimensional lattices of artificial atoms which are composed of zero-dimensional dots connected by one-dimensional electron wires. For the optical waveguide networks, we have established basic technologies to achieve small-size optical integrated circuits. The area selective epitaxy using FME and MEE enables us to fabricate micro scale structures with atomically flat and vertical lateral boundaries. Using these structures, we have succeeded in fabricating low-threshold micro-disc lasers and low loss optical waveguides. Combining those components, we have demonstrated a single optical switching system. The quantum dot networks have been fabricated using conventional e-beam lithography followed by reactive ion beam etching on extremely high mobility AlGaAs/GaAs wafers. The final structures have dot densities of 1.2 〜 9 x 1010 cm-2. We have investigated transport characteristics for these structures. New effects based on the electron correlation have been found with these quantum dot networks. One of them is that the conductance minimum appears periodically when the electron density is increased. Since the minimum appears even at the incommensurate occupation of dots, the result indicates that the electron system is stabilized when the cluster of dots are occupied by particular number of electrons. |
11.Key Words
(1)Nano-technology、(2)Semiconductor nano-structure、(3)Micro-laser
(4)Quantum dot、(5)Optical waveguide、(6)Artificial atom
(7)Optical integrated circuit、(8)Electron correlation、(9)Epitaxial crystal growth
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| - To be published - International Workshop on Nitride Semiconductors 2000 | ||||
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| Microelectronics Journal | 28 | 1997 | 743 | |
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| Author | Title of Article | |||
| Y. Horikoshi et al. | Channel depth dependent transport characteristics of a two-Dimensional electron gas in an undoped GaAs/AlGaAs hetero-Structure | |||
| Journal | Volume | Year | Pages Concerned | |
| Inst. Phys. Conf. Ser. (Proc. ISCS99) | 166 | 2000 | 151 | |
| Author | Title of Article | |||
| Y. Horikoshi et al. | Transport characteristics of electrons in weak short-period Two-dimensional potential arrays | |||
| Journal | Volume | Year | Pages Concerned | |
| Proc. ICPS2000 - To be published - | ||||
| Author | Title of Article | |||
| Y. Horikoshi et al. | Study of free GaAs surfaces using a back-gated undoped GaAs/AlGaAs heterosturucture | |||
| Journal | Volume | Year | Pages Concerned | |
| Submitted to Phys. Rev. B | ||||
| Author | Title of Article | |||
| Y. Horikoshi et al. | Transport characteristics of electrons in weak short-period Two-dimensional potential arrays | |||
| Journal | Volume | Year | Pages Concerned | |
| Submitted to Appl Phys. Lett. | ||||