Summary of Research Project Results Under the JSPS FY2000
"Research for the future Program"



1.Research Institution Waseda University
 
2.Research Area Physical and Engineering Science
 
3.Research Field Exploratory Research on Novel Artificial Materials and Substances for Next-Generation Industries
 
4.Term of Project FY1996〜FY2000
 
5.Project Number 96P00103
 
6.Title of Project Semiconductor Quantum Dot Network

7.Projetct Leader
Name Institution,Department Title of Position
Horikoshi, Yoshiji Waseda University, Dept. of Electrical Electronics and Computer Engineering Professor

8.Core Members

Names Institution,Department Title of Position
Ando, Tsuneo Tokyo University, Institute of Solid State Physics Professor
Hirayama, Yoshiro NTT Basic Research Laboratories Group Leader

9.Cooperating Researchers

Names Institution,Department Title of Position
Yoshino, Junji Tokyo Institute of Technology Professor
Ando, Seigo NTT Basic Research Laboratories Research Staff
Sota, Takayuki Waseda University, Dept. of Electrical, Electronics and Computer Engineering Professor

10.Summary of Research Results

The purpose of our project is to find new phenomena and new functions from nanoscale structures composed of conventional semiconductors. To fabricate nanoscale structures, we employ new epitaxial growth techniques, we have developed before, such as flow-rate modulation epitaxy (FME) and migration-enhanced epitaxy (MEE), and also we use convention e-beam and photolithography. Throughout this work, special attention has been paid to achieve accurate and uniform geometrical structures. Therefore, so-called "self-organization technique" is not used in this work.
For semiconductor nanoscale structures, we focus on the optical waveguide networks which are composed of micro-disc lasers and small area detectors connected by low-loss optical waveguides using GaAs and AlGaAs, and on the quantum dot networks, or two-dimensional lattices of artificial atoms which are composed of zero-dimensional dots connected by one-dimensional electron wires.
For the optical waveguide networks, we have established basic technologies to achieve small-size optical integrated circuits. The area selective epitaxy using FME and MEE enables us to fabricate micro scale structures with atomically flat and vertical lateral boundaries. Using these structures, we have succeeded in fabricating low-threshold micro-disc lasers and low loss optical waveguides. Combining those components, we have demonstrated a single optical switching system.
The quantum dot networks have been fabricated using conventional e-beam lithography followed by reactive ion beam etching on extremely high mobility AlGaAs/GaAs wafers. The final structures have dot densities of 1.2 〜 9 x 1010 cm-2. We have investigated transport characteristics for these structures. New effects based on the electron correlation have been found with these quantum dot networks. One of them is that the conductance minimum appears periodically when the electron density is increased. Since the minimum appears even at the incommensurate occupation of dots, the result indicates that the electron system is stabilized when the cluster of dots are occupied by particular number of electrons.

11.Key Words

(1)Nano-technology、(2)Semiconductor nano-structure、(3)Micro-laser
(4)Quantum dot、(5)Optical waveguide、(6)Artificial atom
(7)Optical integrated circuit、(8)Electron correlation、(9)Epitaxial crystal growth

12.References

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T. Ando et al. Characteristic Localization in Antidot Lattices
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T. Ando et al. Two-Component Cyclotron Resonance in Bilayer Quantum Hall Systems
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Physica E 6 2000 636-639

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T. Ando et al. Breakdown of Single Mode Approximation in Quantum Hall Cyclotron Resononance
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Solid State Electron 42 1998 1175-1177

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T. Ando et al. Aharonov-Bohm Type Oscillation in Antidot Lattices
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Solid }State Electron 42 1998 1141-1145

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T. Ando et al. Commensurability Peak in Square and Triangular Antidot Arrays
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Sold Ste Electron 42 1998 1147-1150

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T. Ando et al. Two-Componet cyclotron Resonance in Quantum Hall Systems
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Phys. Rev. B58 1998 1485-1498

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T. Ando et al. Numerical Study of Localization in Antidot Lattices
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Phys. Rev. B58 1998 10583-10588

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T. Ando et al. Photoluminescence in Asymmetric Quantum Wells at ν>1
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Physica B256-258 1998 319-322

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T. Ando et al. Aharonov-Bohm Oscillation of Localization in Antidot Lattices
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Physica E 6 2000 503-506

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T. Ando et al. Electron-Electron Interaction E ects in Integer Quantum Hall Photoluminescence
Journal Volume Year Pages Concerned
Physica E 7 2000 604-607

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T. Ando et al. Magnetic-Field Dependence of Localization in Antidot Lattices
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Phys. Suppl. 138 2000 521-522

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T. Ando et al. Chaotic Transport in Antidot Lattices
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J. Electronic Materials 29 2000 557-564

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T. Ando et al. Temperature dependence of integer quantum Hall photoluminescence - To be published -
Journal Volume Year Pages Concerned
Proceedings of 25th International Conference on the Physics of Semiconductors      

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T. Ando et al. Energy-gap e ects on Umklapp scattering in weakly modulated two-dimensional electron systems
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Proceedings of 25th International Conference on the Physics of Semiconductors      

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個体物理(アグネ技術センター) 11 2000 1-11

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Y. Hirayama et al. Selenium doped high-index GaAs epilayers grown by molecular beamepitaxy
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Microelectronics Journal 28 1997 743

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Y. Hirayama et al. Imaging of Friedel oscillations at epitaxially grown InAs (111) A Surfaces using scanning tunneling microscopy - To be published -
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Proc. ICPS2000      

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Y. Hirayama et al. Imaging of Friedel oscillation patterns of two-dimensionally Accumulated electrons at epitaxially grown InAs (111) A surfaces - submitted to Phys. Rev. Lett. -
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Y. Hirayama et al. Transport characteristics of electrons in weak short-period Two-dimensional potential arrays - To be published -
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Proc. ICPS2000      

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Y. Hirayama et al. Study of free GaAs surfaces using a back-gated undoped GaAs/AlGaAs heterostructure - submitted to Phys. Rev. B -
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Y. Hirayama et al. Transport characteristics of electrons in weak short-period Two-dimenshional potential arrays
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S. Ando et al. Hexagonal facet laser with optical waveguidesgrown by flow-rate Modulation epitaxy
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S. Ando et al. Triangular-facet lasers coupled by a rectangular optical guide
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S. Ando et al. GaN hexagonal microprisms with smooth vertical facets fabricated By selective metalorganic vapor phase epitaxy
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S. Ando et al. Short-cavity Fabry-Perot lasers using crystal facets
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- To be published - International Workshop on Nitride Semiconductors 2000      

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T. Sota et al. Gain spectroscopy of continuous wave InGaN multiquantum well Laser diodes
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Y. Hirayama et al. Constant-pressure first-principles molecular dynamics study on BN, AIN, and GaN
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T. Sota et al. Luminescence spectra from InGaN multi-quantum wells heavily Doped with Si
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Appl. Phys. Lett 72 1998 3329

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T. Sota et al. First-principles study on electronic and elastic properties of BN, AIN, and GaN
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T. Sota et al. First-princiles study on piezoelectric constants in strained Bn, AIN. And GaN
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T. Sota et al. Structural and vibrational properties of GaN substrate
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T. Sota et al. Reflectance and emission spectra of excitonic polaritons in GaN
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Phys. Rev. B60 1999 4723

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T. Sota et al. Quantum confined Stark effect in an AlGaN/GaN single quantum Well structure
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T. Sota et al. Optical properties of an InGaN active layer in ultraviolet light Emitting diode
Journal Volume Year Pages Concerned
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Author Title of Article
T. Sota et al. A pump-and-probe study on photoinduced internal field screen-Ing dynamics in an AlGaN/GaN single quantum well structure
Journal Volume Year Pages Concerned
Appl. Phys. Lett. 76 2000 454

Author Title of Article
T. Sota et al. Evidence of localization effects in InGaN single-quantum-well Ultraviolet light emitting diodes
Journal Volume Year Pages Concerned
Appl. Phys. Lett. 76 2000 1671

Author Title of Article
T. Sota et al. Chemical bonding properties of cubic III-nitrides semi-Conductors
Journal Volume Year Pages Concerned
Progress in Theoretical Physics:Supplement 1138 2000 122

Author Title of Article
T. Sota et al. Comparison of optical properties in and GaN/AlGaN and InGaN/AlGaN Single quantum wells
Journal Volume Year Pages Concerned
Jpn. J. Appl. Phys 39 2000 2417

Author Title of Article
T. Sota et al. An attenuated total reflection study on surface phonon-polariton In GaN
Journal Volume Year Pages Concerned
J. Phys:Condensed Matter 12 2000 7041

Author Title of Article
T. Sota et al. Raman scattering from phonon-polaritons in GaN
Journal Volume Year Pages Concerned
Phys. Rev. B62 2000 10861

Author Title of Article
T. Sota et al. Localozed quantum-well excitons in InGaN single-quantum-well Amber light emitting diodes
Journal Volume Year Pages Concerned
J. Appl. Phys. 88 2000 5153

Author Title of Article
T. Sota et al. Forward Raman scattering by quasilongitudinal optical phonons in GaN
Journal Volume Year Pages Concerned
J. Appl. Phys. 88 2000 5202

Author Title of Article
Y. Horikoshi et al. Surface atomic processes during flow-rate modulation epitaxy
Journal Volume Year Pages Concerned
Appl. Surf. Sci. 112 1997 48

Author Title of Article
Y. Horikoshi et al. Selenium doped high-index GaAs epilayers grown by molecular Beam epitaxy
Journal Volume Year Pages Concerned
Microelectronics Journal 28 1997 743

Author Title of Article
Y. Horikoshi et al. Suppression of AlGaAs/GaAs superlattice intermixing by p-type Doping
Journal Volume Year Pages Concerned
J. crystal Growth 175-176 1997 292

Author Title of Article
Y. Horikoshi et al. anomalous stability of v=1 bilayer quantum hall state
Journal Volume Year Pages Concerned
Solid State Commun. 103 1997 447

Author Title of Article
Y. Horikoshi et al. Reflection high-energy electron diffraction oscillations during Growth of GaAs at low temperatures under high As overpressure
Journal Volume Year Pages Concerned
Appl. Phys. Lett. 71 1997 1540

Author Title of Article
Y. Horikoshi et al. Hexagonal facet laser with optical waveguides grown by flow-Rate modulation epitaxy
Journal Volume Year Pages Concerned
J. Crystal Growth 170 1997 719

Author Title of Article
Y. Horikoshi et al. Phase transition in the v=2 bilayer quantum hall state
Journal Volume Year Pages Concerned
Phys. Rev. Lett. 80 1998 4534

Author Title of Article
Y. Horikoshi et al. Electric field induced recombination centers in GaAs
Journal Volume Year Pages Concerned
Jpn. J. Appl. Phys. 37 1998 1622

Author Title of Article
Y. Horikoshi et al. Scanning tunneling microscopy study of GaAs(001) surfaces Grown by migration-enhanced epitaxy at low temperatures
Journal Volume Year Pages Concerned
Jpn. J. Appl. Phys. 37 1998 758

Author Title of Article
Y. Horikoshi et al. Selective Growth of GaAs on GaAs (111)B Substrates by Migration-Enhanced Epitaxy
Journal Volume Year Pages Concerned
Jpn. J. Appl. Phys. 38 1999 6197

Author Title of Article
Y. Horikoshi et al. Characteristics of molecular beam epitaxy grown GaAs simltaneous-Ly doped with Si and Be
Journal Volume Year Pages Concerned
Jpn. J. Appl. Phys. 38 1999 6583

Author Title of Article
Y. Horikoshi et al. Advanced epitaxial growth techniques: Atomic layer epitaxy and migration-enhanced epitaxy
Journal Volume Year Pages Concerned
J. Crystal Growth 201/202 1999 150

Author Title of Article
Y. Horikoshi et al. Determination of the facet idex in area selective epitaxy of GaAs
Journal Volume Year Pages Concerned
Jpn. Appl Phys 39 2000 2457

Author Title of Article
Y. Horikoshi et al. Formation of a two-dimensional electron gas in an inverted Undoped heterostructure with a shallow channel depth
Journal Volume Year Pages Concerned
J. Appl. Phys. 87 2000 952

Author Title of Article
Y. Horikoshi et al. Selective area growth of GaAs and InGaAs on GaAs(111)B Substrate by migration-enhanced epitaxy
Journal Volume Year Pages Concerned
Inst. Phys. Cof. Ser. (Proc. ISCS99) 166 2000 39

Author Title of Article
Y. Horikoshi et al. Electric field effect of GaAs photoluominescence in AlGaAs/GaAs pn heterojunction
Journal Volume Year Pages Concerned
Inst. Phys. Conf. Ser. (proc. ISCS99) 166 2000 107

Author Title of Article
Y. Horikoshi et al. Electric field induced recombination centers in GaAs
Journal Volume Year Pages Concerned
Inst. Phys. Conf. Ser. (Proc. ISCS99) 166 2000 123

Author Title of Article
Y. Horikoshi et al. Channel depth dependent transport characteristics of a two-Dimensional electron gas in an undoped GaAs/AlGaAs hetero-Structure
Journal Volume Year Pages Concerned
Inst. Phys. Conf. Ser. (Proc. ISCS99) 166 2000 151

Author Title of Article
Y. Horikoshi et al. Transport characteristics of electrons in weak short-period Two-dimensional potential arrays
Journal Volume Year Pages Concerned
Proc. ICPS2000 - To be published -      

Author Title of Article
Y. Horikoshi et al. Study of free GaAs surfaces using a back-gated undoped GaAs/AlGaAs heterosturucture
Journal Volume Year Pages Concerned
Submitted to Phys. Rev. B      

Author Title of Article
Y. Horikoshi et al. Transport characteristics of electrons in weak short-period Two-dimensional potential arrays
Journal Volume Year Pages Concerned
Submitted to Appl Phys. Lett.      


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