Summary of Research Project Results Under the JSPS FY2000
"Research for the future Program"



1.Research Institution Tokyo Institute of Technology
 
2.Research Area Physical and Engineering Sciences
 
3.Research Field Exploratory Research on Novel Artificial Materials and Substances for Next-Generation Industries
 
4.Term of Project Fy1996〜FY2000
 
5.Project Number 96P00101
 
6.Title of Project Super Heterostructures for Photonics Materials

7.Projetct Leader
Name Institution,Department Title of Position
Shigehisa ARAI Tokyo Institute of Technology, Research Center for Quantum Effect Electronics Professor

8.Core Members

Names Institution,Department Title of Position
Masahiro ASADA Tokyo Institute of Technology, Interdisciplinary Graduate School of Science and Engineering Professor
Minoru YAMADA Kanazawa University, Faculty of Engineering Professor
Masahiro WATANABE Tokyo Institute of Technology, Interdisciplinary Graduate School of Science and Engineering Assoc. Prof.

9.Cooperating Researchers

Names Institution,Department Title of Position
Kazuo TSUTSUI Tokyo Institute of Technology, Interdisciplinary Graduate School of Science and Engineering Assoc. Prof.
Tomoyuki MIYAMOTO Tokyo Institute of Technology, Microsystem Research Center Assoc. Prof.
Yasuyuki MIYAMOTO Tokyo Institute of Technology, Faculty of Engineering Assoc. Prof.

10.Summary of Research Results

The purpose of this project is a realization and an establishment of scientific foundation of super heterostructure materials for photonic devices consisting of large energy band offset and/or nanostructures such as low-dimensional quantum structures.
Results obtained in this research are summarized as follows.
(1) CaF2-CdF2 superlattice structure, which can be a good candidate as quantum cascade lasers for wide wavelength range was successfully grown. An extremely high peak to valley ratio of 106 of a resonant tunneling diode was achieved at room-temperature, and reproducible fabrication technology was developed.
(2) High quality GaInNAs/GaAs compound for long-wavelength lasers for communications was developed, and low threshold current CW operation of 1.18μm wavelength surface-emitting-laser was achieved.
(3) Triple barrier resonant tunneling diode based on InAlAs/GaInAs with a large barrier height of 0.5eV was realized and its response to 1.4THz electromagnetic waves was observed.
(4) An extremely low-damage fabrication technology of GaInAsP/InP ultra-fine structures was developed and was applied to realize high performance 1.5μm wavelength semiconductor lasers for optical communications. By using this technology, single-wavelength distributed feedback (DFB) lasers with a record low threshold current of 0.7mA were realized. Futhermore, high quality quasi-quantum-wire lasers with 43nm-wide active region were realized, which operate in lower threshold current and higher efficiency than conventional quantum-well lasers. These results indicate the advantage of the fabrication technology of ultra-fine structures based on GaInAsP/InP low-dimensional quantum structures. (5) A novel technology to grow GaInAsP/InP crystal on fine-sized metal (tungsten) patterns was developed, and hetero bipolar transistors (HBTs) consisting of collector metal structure was realized.

11.Key Words

(1)Heterostructures、(2)Superlattices、(3)Fluoride Superlattices
(4)GaInNAs Compounds、(5)GaInAsP Compounds、(6)Nanostructures
(7)Semiconductor Lasers、(8)Single-wavelength Lasers、(9)Low-damage Dry Etching

12.References

[Reference Articles]
Author Title of Article
T. Arai, H. Tobita, Y. Miyamoto and K. Furuya GaAs buried growth over tungsten stripe using TEG and TMG
Journal Volume Year Pages Concerned
J. Crystal Growth 221 2000 212-219

Author Title of Article
B. Y. Zhang, Y. Ikeda, Y. Miyamoto, K. Furuya and N. Kikegawa A versatile hot electron emitter of InGaAs/AlAs heterostructure with wide energy range at high current density
Journal Volume Year Pages Concerned
Physica E 7 2000 851-854

Author Title of Article
T. Arai, H. Tobita, Y. Harada, M. Suhara, Y. Miyamoto and K. Furuya Toward nano-metal buried structure in InP - 20 nm wire and InP buried growth of tungsten
Journal Volume Year Pages Concerned
Physica E 7 2000 896-901

Author Title of Article
T. Arai, Y. Harada, S. Yamagami, Y. Miyamoto and K. Furuya First fabrication of GaInAs/InP buried metal heterojunction bipolar transistor and reduction of base-collector capacitance
Journal Volume Year Pages Concerned
Jpn. J. Appl. Phys. 39[6A] 2000 L503-L505

Author Title of Article
M. Nagase, M. Suhara, Y. Miyamoto and K. Furuya Peak width analysis of current-voltage characteristics of triple-barrier resonant tunneling diodes
Journal Volume Year Pages Concerned
Jpn. J. Appl. Phys. 39[6A] 2000 3314-3318

Author Title of Article
Y. Miyamoto, A. Kokubo, H. Oguchi, M. Kurahashi and K. Furuya Fabrication and transport properties of 50-nm-wide Au/Cr/GaInAs electrode for electron wave interference device
Journal Volume Year Pages Concerned
Appl. Surf. Sci. 159-160 2000 179-185

Author Title of Article
T. Oobo, T. Oobo, R. Takemura, K. Sato, M. Suhara, Y. Miyamoto and K. Furuya Effect of spacer layer thickness in energy level width narrowing in GaInAs/InP resonant tunneling diodes grown by OMVPE
Journal Volume Year Pages Concerned
Jpn. J. Appl. Phys. 37[2] 1998 445-449

Author Title of Article
H. Hongo, Y. Miyamoto, J. Suzuki, M. Suhara, and K. Furuya Wrapped alignment mark for fabrication of interference/diffraction hot electron devices
Journal Volume Year Pages Concerned
Jpn. J. Appl. Phys. .37[3B] 1998 1518-1521.

Author Title of Article
Y. Miyamoto, A. Yamaguchi, K. Oshima, W. Saitoh and M. Asada Metal-insulator-semiconductor emitter with epitaxial CaF2 layer as insulator
Journal Volume Year Pages Concerned
J. Vac. Sci. Technol. B 16[2] 1998 851-854

Author Title of Article
Y. Miyamoto, J. Yoshinaga, H. Toda, T. Arai, H. Hongo, T. Hattori, A. Kokubo and K. Furuya Sub-micron GaInAs/InP hot electron transistors by EBL process and size dependence of current gain
Journal Volume Year Pages Concerned
Sol. Sta. Electron. 42[7-8] 1998 1467-1470

Author Title of Article
Kokubo, T. Hattori, H. Hongo, M. Suhara, Y. Miyamoto and K. Furuya 25 nm pitch GaInAs/InP buried structure by calixarene resist
Journal Volume Year Pages Concerned
Jpn. J. Appl. Phys. 37[7A] 1998 L827-L829

Author Title of Article
Y. Miyamoto , A. Kokubo, T. Hattori, H. Hongo, M. Suhara, and K. Furuya 25 nm pitch GaInAs/InP buried structure : Improvement by calixarene as EB resist and TBP as P-source in OMVPE regrowth
Journal Volume Year Pages Concerned
J. Vac. Sci. Technol. B 16[6] 1998 3894-3898

Author Title of Article
H. Hongo, Y. Miyamoto, M. Suhara and K. Furuya A 40nm pitch double slit experiment of hot electrons in a semiconductor under a magnetic field
Journal Volume Year Pages Concerned
Appl. Phys. Lett. 70[1] 1997 93-95

Author Title of Article
J. M. M. Rios, L. M. Lurardi, S. Chandrasekhar and Y. Miyamoto A self-consistent method for complete small-signal parameter extraction of InP-based heterojunction bipolar transistors(HBT's)
Journal Volume Year Pages Concerned
IEEE Trans. : Microwave Theory Tech. 45[1] 1997 39-45

Author Title of Article
H. Hongo, Y. Miyamoto, M. Suhara and K. Furuya Hot electron interference by 40nm-pitch double slit buried in semiconductor
Journal Volume Year Pages Concerned
Microelectron. Engrg. 35 1997 337-340

Author Title of Article
H. Hongo, H. Tanaka, Y. Miyamoto, T. Otake, J. Yoshinaga and K. Furuya Electrical properties of 100nm pitch Cr/Au fine electrodes with 40nm width on GaInAs toward hot electron interference/diffraction devices
Journal Volume Year Pages Concerned
Microelectron. Engrg. 35 1997 241-244

Author Title of Article
Takemura, M. Suhara, T. Oobo, Y. Miyamoto and K. Furuya High-temperature estimation of phase coherent length of hot electron using GaInAs/InP triple-barrier resonant tunneling diodes grown by OMVPE
Journal Volume Year Pages Concerned
Jpn. J. Appl. Phys. 36[3B] 1997 1846-1848

Author Title of Article
M. Suhara, C. Nagao, H. Honji, Y. Miyamoto, K. Furuya and R. Takemura Atomically flat OMVPE growth of GaInAs and InP observed by AFM for level narrowing in resonant tunneling diodes
Journal Volume Year Pages Concerned
J. Cryst. Growth 179[1-2] 1997 18-25

Author Title of Article
Oobo, R. Takemura, M. Suhara, Y. Miyamoto and K. Furuya High peak to valley current ratio GaInAs/GaInP resonant tunneling diodes
Journal Volume Year Pages Concerned
Jpn. J. Appl. Phys. 36[8] 1997 5079-5080

Author Title of Article
H. Hongo, Y. Miyamoto, M. Gault and K. Furuya Influence of a finite energy width in electron distribution to an experiment of hot electron double-slit interference-a design of the emitter structure
Journal Volume Year Pages Concerned
J. Appl. Phys. 82[8] 1997 3846-3852

Author Title of Article
H. Hongo, H. Tanaka, Y. Miyamoto, J. Yoshinaga and K. Furuya Electrical properties of 100nm pitch Cr/Au fine electrodes with 40nm width on GaInAs
Journal Volume Year Pages Concerned
Jpn. J. Appl. Phys. 35[8A] 1996 L964-L967

Author Title of Article
F. Vazquez, D. Kobayashi, I. Kobayashi, Y. Miyamoto, K. Furuya, T. Maruyama, M. Watanabe and M. Asada Detection of hot electron current with scanning hot electron microscopy
Journal Volume Year Pages Concerned
Appl. Phys. Lett. 68[15] 1996 2196-2198

Author Title of Article
R. Takemura, M. Suhara, Y. Miyamoto, K. Furuya and Y. Nakamura Current-voltage characteristics of triple-barrier resonant tunneling diodes including coherent and incoherent tunneling process
Journal Volume Year Pages Concerned
IEICE of Jpn. E-79C[11] 1996 1525-1529

Author Title of Article
H. Hongo, T. Hattori, Y. Miyamoto, K. Furuya, K. Matsunuma, M. Watanabe and M. Asada Seventy nm pitch patterning on CaF2 by e-beam exposure An inorganic resist and a contamination resist
Journal Volume Year Pages Concerned
Jpn. J. Appl. Phys. 35[12A] 1996 6342-6343

Author Title of Article
M. M. Raj, J. Wiedmann, S. Toyoshima, Y. Saka, K. Ebihara and S. Arai High-reflectivity semiconductor/ benzocyclobutene Bragg reflector mirrors for GaInAsP/InP lasers"
Journal Volume Year Pages Concerned
to be published in Jpn. J. Appl. Phys. 40[4A] 2001  

Author Title of Article
N. Nunoya, M. Nakamura, M. Morshed, S. Tamura and S. Arai High-performance 1.55 μm wavelength GaInAsP/InP distributed feedback lasers with wirelike active regions
Journal Volume Year Pages Concerned
to be published in IEEE J. Select. Topics Quantum Electron. 7[3] 2001  

Author Title of Article
M. M. Raj, J. Wiedmann, Y. Saka, K. Ebihara and S. Arai Highly uniform 1.5 μm wavelength deeply etched semiconductor/bcnzocyclobutene distributed Bragg reflector lasers
Journal Volume Year Pages Concerned
Jpn. J. Appl. Phys. 39[12B] 2000 L1297-L1299

Author Title of Article
N. Nunoya, H. Yasumoto, H. Midorikawa, S. Tamura and S. Arai Low threshold current density operation of GaInAsP/InP lasers with strain-compensated multi-layered wirelike active regions
Journal Volume Year Pages Concerned
Jpn. J. Appl. Phys. 39[10B] 2000 L1042-L1045

Author Title of Article
M. M. Raj, N. Serizawa and S. Arai Theoretical analysis of GaInAsP/InP multiple micro-cavity laser
Journal Volume Year Pages Concerned
Jpn. J. Appl. Phys. 39[10A] 2000 5847-5854

Author Title of Article
J. Wiedmann, M. M. Raj, Y. Saka, S. Tamura and S. Arai Singlemode operation of deeply etched coupled cavity laser with DBR facet
Journal Volume Year Pages Concerned
Electron. Lett. 36[14] 2000 1211-1212

Author Title of Article
N. Nunoya, M. Nakamura, H. Yasumoto, M. Morshed, K. Fukuda, S. Tamura and S. Arai Sub-milliampere operation of 1.5 μm wavelength high index-coupled buried heterostructure distributed feedback lasers
Journal Volume Year Pages Concerned
Electron. Lett. 36[14] 2000 1213-1214

Author Title of Article
M. Nakamura, N. Nunoya, H. Yasumoto, M. Morshed, K. Fukuda, S. Tamura and S. Arai Very low threshold current density operation of 1.5 μm DFB lasers with wire-like active regions
Journal Volume Year Pages Concerned
Electron. Lett. 36[7] 2000 639-640

Author Title of Article
N. Nunoya, M. Nakamura, H. Yasumoto, S. Tamura and S. Arai GaInAsP/InP multiple-layered quantum-wire lasers
Journal Volume Year Pages Concerned
Jpn. J. Appl. Phys. 39[6A] 2000 3410-3415

Author Title of Article
M. Madhan Raj, Y. Saka, J. Wiedmann, H. Yasumoto and S. Arai Continuous wave operation of 1.55 μm GaInAsP/InP laser with semiconductor/benzocyclobutene distributed Bragg reflector
Journal Volume Year Pages Concerned
Jpn. J. Appl. Phys. 38[11A] 1999 L1240-L1242

Author Title of Article
N. Nunoya, M. Nakamura, M. Tamura and S. Arai Characterization of etching damage in C12/H2-reactive-ion-etching of GaInAsP/InP heterostructure
Journal Volume Year Pages Concerned
Jpn. J. Appl. Phys. 38[12A] 1999 6942-6946

Author Title of Article
N. Nunoya, M. Nakamura, H. Yasumoto, S. Tamura and S. Arai Low threshold GaInAsP/InP distributed feedback lasers with periodic wire active regions
Journal Volume Year Pages Concerned
Jpn. J. Appl. Phys. 38[11B] 1999 L1323-L1326

Author Title of Article
T. Kojima, S. Tanaka, H. Yasumoto, S. Tamura and S. Arai Evaluation of optical gain properties of GaInAsP/InP compressively strained quantum-wire lasers
Journal Volume Year Pages Concerned
Jpn. J. Appl. Phys. 38[11A] 1999 6327-6334

Author Title of Article
D. Lubbert, B. Jenichen, T. Baumbach, H. T. Grahn, G. Paris, A. Mazuelas, T. Kojima and S. Arai Elastic stress relaxation in GaInAsP quantum wire on InP
Journal Volume Year Pages Concerned
J. Phys. D:Appl. Phys. 32 1999 A21-A25

Author Title of Article
M. Madhan Raj, S. Toyoshima, and S. Arai Multiple micro-cavity laser with benzocyclobutene/ semiconductor high reflective mirrors fabricated by CH4/H2-reactive ion etching
Journal Volume Year Pages Concerned
Jpn. J. Appl. Phys. 38[7B] 1999 L811-L814

Author Title of Article
M. Madhan Raj, J. Wiedmann, Y. Saka, H. Yasumoto and S. Arai 1.5 μm wavelength DBR lasers consisting of 31/4-semiconductor and 31/4-groove buried with benzocyclobutene
Journal Volume Year Pages Concerned
Electron. Lett. 35[16] 1999 1335-1337

Author Title of Article
T. Kojima, H. Nakaya, S. Tanaka, H. Yasumoto, S. Tamura and S. Arai Temperature dependence of internal quantum efficiency of 20nm-wide GaInAsP/InP compressively strained quantum-wire lasers
Journal Volume Year Pages Concerned
Jpn. J. Appl. Phys. 38[1B] 1999 585-588

Author Title of Article
M. Madhan Raj, K. Numata, S. Toyoshima, and S. Arai GaInAsP/InP multiple short cavity laser with 1/4-air gap/ semiconductor Bragg reflectors
Journal Volume Year Pages Concerned
Jpn. J. Appl. Phys. 37[12A] 1998 L1461-L1464

Author Title of Article
T. Kojima, S. Arai and G. U. Bacher Anisotropic polarization properties of photoluminescence from GaInAsP/InP quantum-wire structures fabricated by two-step organometallic vapor phase epitaxy growth
Journal Volume Year Pages Concerned
Jpn. J. Appl. Phys. 37[1A/B] 1998 L46-L49

Author Title of Article
M. Tamura, T. Ando, N. Nunoya, S. Tamura, S. Arai and G. U. Bacher Estimation of sidewall recombination in GaInAsP/InP wire structures fabricated by low energy electron-cyclotron-resonance reactive-ion-beam-etching
Journal Volume Year Pages Concerned
Jpn. J. Appl. Phys. 37[6A] 1998 3576-3584

Author Title of Article
B. Jenichen, H. T. Grahn, T. Kojima and S. Arai Lateral periodicity and elastic stress relaxation in GaInAsP quantum wires on InP investigated by X-ray diffractometry
Journal Volume Year Pages Concerned
J. Appl. Phys. 83[11] 1998 5810-5813

Author Title of Article
T. Kojima, M. Tamura, H. Nakaya, S. Tanaka, S. Tamura and S. Arai GaInAsP/InP compressively strained quantum-wire lasers fabricated by electron beam lithography and 2-step organometallic vapor phase epitaxy
Journal Volume Year Pages Concerned
Jpn. J. Appl. Phys. 37[9A] 1998 4792-4800

Author Title of Article
T. Kojima, X. Y. Jia, Y. Hayafune, S. Tamura, M. Watanabe and S. Arai Size fluctuation of 50nm periodic GaInAsP/InP wire structure by electron beam lithography and wet chemical etching
Journal Volume Year Pages Concerned
Jpn. J. Appl. Phys. 37[11A] 1998 5961-5962

Author Title of Article
T. Kojima, S. Tanaka, H. Yasumoto, H. Nakaya, S. Tamura and S. Arai Gain spectrum measurement of GaInAsP/InP compressively-strained quantum-wire lasers
Journal Volume Year Pages Concerned
Jpn. J. Appl. Phys. 37[11B] 1998 L1386-L1389

Author Title of Article
M. Tamura, T. Kojima, T. Ando, N. Nunoya, S. Tamura, S. Arai Sidewall recombination velocity in GaInAsP/InP quantum-well lasers with wire-like active region fabricated by wet-chemical etching and organo-metallic vapor-phase-epitaxial growth
Journal Volume Year Pages Concerned
Jpn. J. Appl. Phys. 37[12A] 1998 6569-6574

Author Title of Article
M. Madhan Raj, S. Arai and M. Tamura Photon recycling effect in semiconductor lasers low using dimensional structures
Journal Volume Year Pages Concerned
Jpn. J. Appl. Phys. 36[10A] 1997 6368-6375

Author Title of Article
K. C. Shin, N. Serizawa, M. Madhan Raj, and S. Arai Drive current and design consideration of an ultra-low threshold current laser for optical parallel data communication
Journal Volume Year Pages Concerned
IEEE Lightwave Technol. 15[5] 1997 845-851

Author Title of Article
T. Takizawa, A. Uchino, and S. Arai Proposal of semiconductor directional-coupler-type all-optical switch with tapered-waveguide structure
Journal Volume Year Pages Concerned
Jpn. J. Appl. Phys. 36[3A] 1997 1060-1067

Author Title of Article
T. Takizawa, A. Uchino, and S. Arai Switching operation of GaInAs/InP multiple-quantum-well directional-coupler-type all-optical switch
Journal Volume Year Pages Concerned
Jpn. J. Appl. Phys. 36[2A] 1997 L110-L113

Author Title of Article
K. C. Shin, M. Tamura, N. Serizawa, S. Kurihashi, S. Tamura, and S. Arai Fabrication and low threshold current density operation of GaInAsP/InP multiple-reflector microcavity laser
Journal Volume Year Pages Concerned
Optical and Quantum Electron. 28 1996 487-493

Author Title of Article
M. Tamura, K. C. Shin, N. Serizawa, and S. Arai Stripe direction dependence of mesa angle formed on (100) InP by selective etching using HCl solution
Journal Volume Year Pages Concerned
Jpn. J. Appl. Phys. 35[4A] 1996 2383-2384

Author Title of Article
T. Takizawa, M. Nakahara, E. Kikuno, and S. Arai Fabrication of 60nm pitch ordered InP pillars by EB-lithography and anodization
Journal Volume Year Pages Concerned
J. Electron. Materials 25[4] 1996 657-660

Author Title of Article
T. Kageyama, T. Miyamoto, S. Makino, Y. Ikenaga, N. Nishiyama, A. Matsutani, F. Koyama and K. Iga Room temperature continuous-wave operation of GaInNAs/GaAs VCSELs grown by chemical beam epitaxy with output power exceeding 1mW
Journal Volume Year Pages Concerned
Electron. Lett. 37 2001 225-226

Author Title of Article
S. Makino, T. Miyamoto, T. Kageyama, N. Nishiyama, F. Koyama and K. Iga GaInNAs/GaAs quantum dots grown by chemical beam epitaxy
Journal Volume Year Pages Concerned
J. Crystal Growth 221 2000 561-565

Author Title of Article
T. Kageyama, T. Miyamoto, S. Makino, F. Koyama and K. Iga Optical quality of GaNAs and GaInNAs and its dependence on RF cell condition in chemical beam epitaxy
Journal Volume Year Pages Concerned
J. Crystal Growth 209 2000 350-354

Author Title of Article
T. Miyamoto, T. Kageyama, S. Makino, D. Schlenker, F. Koyama and K. Iga CBE and MOCVD growth of GaInNAs
Journal Volume Year Pages Concerned
J. Crystal Growth 209 2000 339-344

Author Title of Article
T. Kageyama, T. Miyamoto, S. Makino, F. Koyama and K. Iga High-temperature operation up to 170 C of GaInNAs-GaAs quantum-well lasers grown by chemical beam epitaxy
Journal Volume Year Pages Concerned
IEEE Photon. Technol. Lett. 12[1] 2000 10-12

Author Title of Article
T. Miyamoto, K. Takeuchi, T. Kageyama, F. Koyama and K. Iga Chemical beam epitaxy of GaInNAs/GaAs quantum wells and its optical absorption property
Journal Volume Year Pages Concerned
J. Crystal Growth 197 1999 67-72

Author Title of Article
T. Kageyama, T. Miyamoto, S. Makino, F. Koyama and K. Iga Thermal annealing of GaInNAs/GaAs quantum wells grown by chemical beam epitaxy and its effect upon photoluminescence
Journal Volume Year Pages Concerned
Jpn. J. Appl. Phys. 38[3B] 1999 L298-L300

Author Title of Article
K. Takeuchi, T. Miyamoto, T. Kageyama, F. Koyama and K. Iga Chemical beam epitaxy growth and characterization of GaNAs/GaAs
Journal Volume Year Pages Concerned
Jpn. J. Appl. Phys. 37[3B] 1998 1603-1607

Author Title of Article
T. Miyamoto, K. Takeuchi, T. Kageyama, F. Koyama and K. Iga GaInNAs/GaAs quantum well growth by chemical beam epitaxy
Journal Volume Year Pages Concerned
Jpn. J. Appl. Phys. 37[1] 1998 90-91

Author Title of Article
T. Miyamoto, K. Takeuchi, F. Koyama and K. Iga Novel GaInNAs/GaAs quantum well structure for long wavelength semiconductor lasers
Journal Volume Year Pages Concerned
IEEE Photon. Technol. Lett. 9[11] 1997 1448-1450

Author Title of Article
T. Kobori and K. Tsutsui Molecular-beam epitaxy of conductive CdF2 films on Si substrates by simultaneous Cd exposure
Journal Volume Year Pages Concerned
Appl. Phys. Lett. 78[10] 2001 1406-1408

Author Title of Article
T. Gotoh, H. Kambayashi and K. Tsutsui Epitaxial growth of CaxCd1-xF2 mixed crystal films on Si substrates
Journal Volume Year Pages Concerned
Jpn. J. Appl. Phys. 39[5B] 2000 L476-L478

Author Title of Article
K. Tsutsui, K. Kawasaki, M. Mochizuki and T. Matsubara Site controlled metal and semiconductor quantum dots on epitaxial fluoride films
Journal Volume Year Pages Concerned
Microelectronic Engineering 47 1999 135-137

Author Title of Article
K. Kawasaki and K. Tsutsui Surface free energy modification of CaF2 by atomic-height island formation on heteroepitaxy of GaAs on CaF2
Journal Volume Year Pages Concerned
Appl. Surf. Sci. 130-132 1998 464-468

Author Title of Article
K. Kawasaki, M. Mochizuki, J. Takeshita and K. Tsutsui Multitunneling junction of metal droplets formed on CaF2 step edges in a self-assembling manner
Journal Volume Year Pages Concerned
Jpn. J. Appl. Phys. 37[3B] 1998 1508-1513

Author Title of Article
Izumi, K. Tsutsui and N. S. Sokolov Heteroepitaxial growth of CdF2 layers on CaF2/Si(111)by molecular beam epitaxy
Journal Volume Year Pages Concerned
Jpn. J. Appl. Phys. 37[1A] 1998 295-296

Author Title of Article
K. Uejima, J. Takeshita, K. Kawasaki and K. Tsutsui Artificial control of dot sites for Ga droplet arrays on CaF2 films by surface steps and electron beam modifications
Journal Volume Year Pages Concerned
Jpn. J. Appl. Phys. 36[6B] 1997 4088-4091

Author Title of Article
Izumi, N. Matsubara, Y. Kushida, K. Tsutsui and N. S. Sokolov CdF2/CaF2 resonant tunneling diode fabricated on Si(111)
Journal Volume Year Pages Concerned
Jpn. J. Appl. Phys. 36[3B] 1997 1849-1852

Author Title of Article
K. Tsutsui, K. Uejima and K. Kawasaki Fabrication of site-controlled metal dot array by electron beam surface modification
Journal Volume Year Pages Concerned
Microelectronic Engineering 35 1997 245-248

Author Title of Article
Izumi, K. Kawabata, K. Tsutsui, N. S. Sokolov, S. V. Novikov and A. Yu. Khilko Growth of CdF/CaF2/Si(111) heterostructure with abrupt interfaces by using thin CaF2 buffer layer
Journal Volume Year Pages Concerned
Appl. Surf. Sci. 104/105 1996 417-421

Author Title of Article
K. Kawasaki, K. Uejima and K. Tsutsui Site control of Ga droplet array on CaF2 by surface modification using a focused electron beam
Journal Volume Year Pages Concerned
Jpn. J. Appl. Phys. 35[12B] 1996 6689-6695

Author Title of Article
M. Watanabe, Y. Iketani M. Asada Epitaxial growth and electrical characteristics of CaF2/Si/CaF2 resonant tunneling diode structures grown on Si(111) 1 -off substrate
Journal Volume Year Pages Concerned
Jpn. J. Appl. Phys. 39[10A] 2000 L964-L967

Author Title of Article
M. Watanabe, T. Funayama, T. Teraji and N. Sakamaki CaF2/CdF2 double-barrier resonant tunneling diode with high room-temperature peak-to-valley ratio
Journal Volume Year Pages Concerned
Jpn. J. Appl. Phys. 39[7B] 2000 L716-L719

Author Title of Article
M. Watanabe, Y. Maeda and S. Okano Epitaxial growth and ultraviolet photoluminescence of CaF2/ZnO/CaF2 heterostructures on Si(111)
Journal Volume Year Pages Concerned
Jpn. J. Appl. Phys. 39[6A] 2000 L500-L502

Author Title of Article
T. Maruyama, N. Nakamura and M. Watanabe Improvement of the visible electroluminescence from nanocrystalline silicon embedded in CaF2 on Si(111) substrate prepared by rapid thermal annealling
Journal Volume Year Pages Concerned
Jpn. J. Appl. Phys. 39[4B] 2000 1996-2000

Author Title of Article
T. Maruyama, N. Nakamura and M. Watanabe Visible electroluminescence from nanocrystalline silicon embedded in single-crystalline CaF2/Si(111) with rapid thermal anneal
Journal Volume Year Pages Concerned
Jpn. J. Appl. Phys. 38[8B] 1999 L904-L906

Author Title of Article
M. Tsutsui, M. Watanabe and M. Asada Resonant tunneling diodes in Si/CaF2 heterostructures grown by molecular beam epitaxy
Journal Volume Year Pages Concerned
Jpn. J. Appl. Phys. 38[8B] 1999 L920-L922

Author Title of Article
M. Watanabe, T. Maruyama and S. Ikeda Light emission from Si nanocrystals embedded in CaF2 epilayers on Si(111): effect of rapid thermal annealing
Journal Volume Year Pages Concerned
J. Luminescence 80 1999 253-256

Author Title of Article
M. Watanabe, Y. Aoki, W. Saitoh and M. Tsuganezawa Negative differential resistance of CdF2/CaF2 resonant tunneling diode on Si(111) grown by partially ionized beam epitaxy
Journal Volume Year Pages Concerned
Jpn. J. Appl. Phys. 38[2A] 1999 L116-L118

Author Title of Article
M. Watanabe, T. Matsunuma, T. Maruyama and Y. Maeda Electroluminescence of nanocrystal Si embedded in single-crystal CaF2/Si(111)
Journal Volume Year Pages Concerned
Jpn. J. Appl. Phys. 37[5B] 1998 L591-L593

Author Title of Article
M. Watanabe, W. Saitoh, Y. Aoki and J. Nishiyama Epitaxial growth of nanometer-thick CaF2/CdF2 heterostructures using partially ionized beam epitaxy
Journal Volume Year Pages Concerned
Solid State Electron. 42[7-8] 1998 1627-1630

Author Title of Article
W. Saitoh, K. Mori, H. Sugiura, T. Maruyama, M. Watanabe and M. Asada Reduction of electriacl resistance of nanometer-thick CoSi2 film on CaF2 by pseudomorphic growth of CaF2 on Si(111)
Journal Volume Year Pages Concerned
Jpn. J. Appl. Phys. 36[7A] 1997 4470-4471

Author Title of Article
F. Vazquez, D. Kobayashi, I. Kobayashi, Y. Miyamoto, K, Furuya, T. Maruyama, M. Watanebe and M. Asada Detection of hot electron current with scanning hot electron microscopy
Journal Volume Year Pages Concerned
Appl. Phys. Lett. 69[15] 1996 2196-2198

Author Title of Article
W. Saitoh, K. Yamazaki, M. Asada and M. Watanabe Proposal and analysis of very short channel field effect transistor using vertical tunneling with new heterostructures on silicon
Journal Volume Year Pages Concerned
Jpn. J. Appl. Phys. 35[9A] 1996 L1104-L1106

Author Title of Article
H. Hongo, T. Hattori, Y. Miyamoto, K. Furuya, T. Matsunuma, M. Watanabe and M. Asada Seventy nm pitch patternings on CaF2 by e-beam exposure: an inorganic rcsist and a contamination resist
Journal Volume Year Pages Concerned
Jpn. J. Appl. Phys. 35[12A] 1996 6342-6343

Author Title of Article
T. Suemasu, W. Saitoh, Y. Kohno, K. Mori, M. Watanabe and M. Asada Transfer efficiency of hot electrons in a metal(CoSi2)/ insulator(CaF2) quantum interference transistor
Journal Volume Year Pages Concerned
Surface science 361/362 1996 209-212

Author Title of Article
M. Watanabe, F. Iizuka and M. Asada Visible light emission from nanocrystalline silicon embedded in CaF2 layers on Si(111)
Journal Volume Year Pages Concerned
IEICE Trans. E79-C[11] 1996 1562-1567

Author Title of Article
M. Asada, Y. Oguma and N. Sashinaka Estimation of interwell terahertz gain by photon-assisted tunneling measurement in triple-barrier resonant tunneling diodes
Journal Volume Year Pages Concerned
Appl. Phys. Lett. 77[5] 2000 618-620

Author Title of Article
N. Sashinaka, Y. Oguma and M. Asada Observation of terahertz photon-assisted tunneling in triple-barrier resonant tunneling diodes integrated with patch antenna
Journal Volume Year Pages Concerned
Jpn. J. Appl. Phys. 39[8] 2000 4899-4903

Author Title of Article
Itoh, M. Saitoh and M. Asada A 25-nm-long channel metal-gate p-type Schottky source/drain metal-oxide-semiconductor field effect transitor on separation-by-implanted-oxygen substrate
Journal Volume Year Pages Concerned
Jpn. J. Appl. Phys. 39[8] 2000 4757-4758

Author Title of Article
W. Saitoh, A. Itoh, S. Yamagami and M. Asada Analysis of short-channel Schottky source/drain metal-oxide-semiconductor field-effect transistor on silicon-on-insulator substrate and demonstration of sub-50nm n-type devices with metal gate
Journal Volume Year Pages Concerned
Jpn. J. Appl. Phys. 38[11] 1999 6226-6231

Author Title of Article
W. Saitoh, S. Yamagami, A. Itoh and M. Asada 35nm metal gate p-type metal oxide semiconductor field-effect transistor with PtSi Schottky source/drain on separation by implanted oxygen substrate
Journal Volume Year Pages Concerned
Jpn. J. Appl. Phys. 38[6A] 1999 L629-L631

Author Title of Article
Y. Oguma, N. Sashinaka and M. Asada Terahertz response with dradual change from square-law detection to photon-assisted tunneling in tripple-barrier resonant tunneling diodes
Journal Volume Year Pages Concerned
Jpn. J. Appl. Phys. 38[7A] 1999 L717-L719

Author Title of Article
N. Kikegawa, B. Zhang, Y. Ikeda, N. Sakai, K. Furuya, M. Asada, M. Watanabe and W. Saitoh Detection time shortening for observation of hot electron spatial distribution by scanning hot electron microscope
Journal Volume Year Pages Concerned
Jpn. J. Appl. Phys. 38[4A] 1999 2108-2113

Author Title of Article
M. Asada, K. Osada and W. Saitoh Theoretical analysis and fabrication of small area metal/insulator resonant tunneling diode integrated with patch antenna for terahertz photon assisted tunneling
Journal Volume Year Pages Concerned
Solid State Electron. 42 1998 1543-1546

Author Title of Article
M. Tsutsui, W. Saitoh, K. Yamazaki and M. Asada Proposal and analysis of coupled channel tunneling FET with new heterostructures on silicon
Journal Volume Year Pages Concerned
Solid State Electron. 42 1998 1547-1551

Author Title of Article
W. Saitoh, K. Yamazaki, M. Tsutsui, A. Itoh and M. Asada Fabrication and characteristics of a field effect transistor using CdF2/CaF2 heterostructures on Si substrate
Journal Volume Year Pages Concerned
Jpn. J. Appl. Phys. 37[10A] 1998 L1138-L1140

Author Title of Article
W. Saitoh, K. Yamazaki, M. Tsutsui and M. Asada Analysis of structure dependence of very short channel field effect transistor using vertical tunneling with heterostructures on silicon
Journal Volume Year Pages Concerned
IEICE Trans. Electron. E81-C[12] 1998 1918-1925

Author Title of Article
W. Saitoh, K. Yamazaki, M. Tsutsui and M. Asada Analysis of the influence of carrier scattering in the channel of a metal/insulator tunneling field effect transistor
Journal Volume Year Pages Concerned
Jpn. J. Appl. Phys. 37[11] 1998 5921-5925

Author Title of Article
M. Asada Proposal and analysis of a three-terminal photon-assisted tunneling device operating in the terahertz frequency range
Journal Volume Year Pages Concerned
Trans. Electron. IEICE E79-C[11] 1996 1537-1542

Author Title of Article
M. Asada A possible three-terminal amplifier device in the terahertz frequency range using photon-assisted tunneling
Journal Volume Year Pages Concerned
Jpn. J. Appl. Phys. 35[6A] 1996 L685-L687

Author Title of Article
Y. Kohno and M. Asada Theoretical base current in metal/insulator resonant tunneling transistors based on electron wave scattered by base port structure
Journal Volume Year Pages Concerned
Physica B 227 1996 216-219


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