| 1.Research Institution | Tokyo Institute of Technology | |
| 2.Research Area | Physical and Engineering Sciences | |
| 3.Research Field | Exploratory Research on Novel Artificial Materials and Substances for Next-Generation Industries | |
| 4.Term of Project | Fy1996〜FY2000 | |
| 5.Project Number | 96P00101 | |
| 6.Title of Project | Super Heterostructures for Photonics Materials |
| Name | Institution,Department | Title of Position |
| Shigehisa ARAI | Tokyo Institute of Technology, Research Center for Quantum Effect Electronics | Professor |
8.Core Members
| Names | Institution,Department | Title of Position |
| Masahiro ASADA | Tokyo Institute of Technology, Interdisciplinary Graduate School of Science and Engineering | Professor |
| Minoru YAMADA | Kanazawa University, Faculty of Engineering | Professor |
| Masahiro WATANABE | Tokyo Institute of Technology, Interdisciplinary Graduate School of Science and Engineering | Assoc. Prof. |
9.Cooperating Researchers
| Names | Institution,Department | Title of Position |
| Kazuo TSUTSUI | Tokyo Institute of Technology, Interdisciplinary Graduate School of Science and Engineering | Assoc. Prof. |
| Tomoyuki MIYAMOTO | Tokyo Institute of Technology, Microsystem Research Center | Assoc. Prof. |
| Yasuyuki MIYAMOTO | Tokyo Institute of Technology, Faculty of Engineering | Assoc. Prof. |
10.Summary of Research Results
|
The purpose of this project is a realization and an establishment of scientific foundation of super heterostructure materials for photonic devices consisting of large energy band offset and/or nanostructures such as low-dimensional quantum structures. Results obtained in this research are summarized as follows. (1) CaF2-CdF2 superlattice structure, which can be a good candidate as quantum cascade lasers for wide wavelength range was successfully grown. An extremely high peak to valley ratio of 106 of a resonant tunneling diode was achieved at room-temperature, and reproducible fabrication technology was developed. (2) High quality GaInNAs/GaAs compound for long-wavelength lasers for communications was developed, and low threshold current CW operation of 1.18μm wavelength surface-emitting-laser was achieved. (3) Triple barrier resonant tunneling diode based on InAlAs/GaInAs with a large barrier height of 0.5eV was realized and its response to 1.4THz electromagnetic waves was observed. (4) An extremely low-damage fabrication technology of GaInAsP/InP ultra-fine structures was developed and was applied to realize high performance 1.5μm wavelength semiconductor lasers for optical communications. By using this technology, single-wavelength distributed feedback (DFB) lasers with a record low threshold current of 0.7mA were realized. Futhermore, high quality quasi-quantum-wire lasers with 43nm-wide active region were realized, which operate in lower threshold current and higher efficiency than conventional quantum-well lasers. These results indicate the advantage of the fabrication technology of ultra-fine structures based on GaInAsP/InP low-dimensional quantum structures. (5) A novel technology to grow GaInAsP/InP crystal on fine-sized metal (tungsten) patterns was developed, and hetero bipolar transistors (HBTs) consisting of collector metal structure was realized. |
11.Key Words
(1)Heterostructures、(2)Superlattices、(3)Fluoride Superlattices
(4)GaInNAs Compounds、(5)GaInAsP Compounds、(6)Nanostructures
(7)Semiconductor Lasers、(8)Single-wavelength Lasers、(9)Low-damage Dry Etching
12.References
| Author | Title of Article | |||
| T. Arai, H. Tobita, Y. Miyamoto and K. Furuya | GaAs buried growth over tungsten stripe using TEG and TMG | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Crystal Growth | 221 | 2000 | 212-219 | |
| Author | Title of Article | |||
| B. Y. Zhang, Y. Ikeda, Y. Miyamoto, K. Furuya and N. Kikegawa | A versatile hot electron emitter of InGaAs/AlAs heterostructure with wide energy range at high current density | |||
| Journal | Volume | Year | Pages Concerned | |
| Physica E | 7 | 2000 | 851-854 | |
| Author | Title of Article | |||
| T. Arai, H. Tobita, Y. Harada, M. Suhara, Y. Miyamoto and K. Furuya | Toward nano-metal buried structure in InP - 20 nm wire and InP buried growth of tungsten | |||
| Journal | Volume | Year | Pages Concerned | |
| Physica E | 7 | 2000 | 896-901 | |
| Author | Title of Article | |||
| T. Arai, Y. Harada, S. Yamagami, Y. Miyamoto and K. Furuya | First fabrication of GaInAs/InP buried metal heterojunction bipolar transistor and reduction of base-collector capacitance | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 39[6A] | 2000 | L503-L505 | |
| Author | Title of Article | |||
| M. Nagase, M. Suhara, Y. Miyamoto and K. Furuya | Peak width analysis of current-voltage characteristics of triple-barrier resonant tunneling diodes | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 39[6A] | 2000 | 3314-3318 | |
| Author | Title of Article | |||
| Y. Miyamoto, A. Kokubo, H. Oguchi, M. Kurahashi and K. Furuya | Fabrication and transport properties of 50-nm-wide Au/Cr/GaInAs electrode for electron wave interference device | |||
| Journal | Volume | Year | Pages Concerned | |
| Appl. Surf. Sci. | 159-160 | 2000 | 179-185 | |
| Author | Title of Article | |||
| T. Oobo, T. Oobo, R. Takemura, K. Sato, M. Suhara, Y. Miyamoto and K. Furuya | Effect of spacer layer thickness in energy level width narrowing in GaInAs/InP resonant tunneling diodes grown by OMVPE | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 37[2] | 1998 | 445-449 | |
| Author | Title of Article | |||
| H. Hongo, Y. Miyamoto, J. Suzuki, M. Suhara, and K. Furuya | Wrapped alignment mark for fabrication of interference/diffraction hot electron devices | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | .37[3B] | 1998 | 1518-1521. | |
| Author | Title of Article | |||
| Y. Miyamoto, A. Yamaguchi, K. Oshima, W. Saitoh and M. Asada | Metal-insulator-semiconductor emitter with epitaxial CaF2 layer as insulator | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Vac. Sci. Technol. B | 16[2] | 1998 | 851-854 | |
| Author | Title of Article | |||
| Y. Miyamoto, J. Yoshinaga, H. Toda, T. Arai, H. Hongo, T. Hattori, A. Kokubo and K. Furuya | Sub-micron GaInAs/InP hot electron transistors by EBL process and size dependence of current gain | |||
| Journal | Volume | Year | Pages Concerned | |
| Sol. Sta. Electron. | 42[7-8] | 1998 | 1467-1470 | |
| Author | Title of Article | |||
| Kokubo, T. Hattori, H. Hongo, M. Suhara, Y. Miyamoto and K. Furuya | 25 nm pitch GaInAs/InP buried structure by calixarene resist | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 37[7A] | 1998 | L827-L829 | |
| Author | Title of Article | |||
| Y. Miyamoto , A. Kokubo, T. Hattori, H. Hongo, M. Suhara, and K. Furuya | 25 nm pitch GaInAs/InP buried structure : Improvement by calixarene as EB resist and TBP as P-source in OMVPE regrowth | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Vac. Sci. Technol. B | 16[6] | 1998 | 3894-3898 | |
| Author | Title of Article | |||
| H. Hongo, Y. Miyamoto, M. Suhara and K. Furuya | A 40nm pitch double slit experiment of hot electrons in a semiconductor under a magnetic field | |||
| Journal | Volume | Year | Pages Concerned | |
| Appl. Phys. Lett. | 70[1] | 1997 | 93-95 | |
| Author | Title of Article | |||
| J. M. M. Rios, L. M. Lurardi, S. Chandrasekhar and Y. Miyamoto | A self-consistent method for complete small-signal parameter extraction of InP-based heterojunction bipolar transistors(HBT's) | |||
| Journal | Volume | Year | Pages Concerned | |
| IEEE Trans. : Microwave Theory Tech. | 45[1] | 1997 | 39-45 | |
| Author | Title of Article | |||
| H. Hongo, Y. Miyamoto, M. Suhara and K. Furuya | Hot electron interference by 40nm-pitch double slit buried in semiconductor | |||
| Journal | Volume | Year | Pages Concerned | |
| Microelectron. Engrg. | 35 | 1997 | 337-340 | |
| Author | Title of Article | |||
| H. Hongo, H. Tanaka, Y. Miyamoto, T. Otake, J. Yoshinaga and K. Furuya | Electrical properties of 100nm pitch Cr/Au fine electrodes with 40nm width on GaInAs toward hot electron interference/diffraction devices | |||
| Journal | Volume | Year | Pages Concerned | |
| Microelectron. Engrg. | 35 | 1997 | 241-244 | |
| Author | Title of Article | |||
| Takemura, M. Suhara, T. Oobo, Y. Miyamoto and K. Furuya | High-temperature estimation of phase coherent length of hot electron using GaInAs/InP triple-barrier resonant tunneling diodes grown by OMVPE | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 36[3B] | 1997 | 1846-1848 | |
| Author | Title of Article | |||
| M. Suhara, C. Nagao, H. Honji, Y. Miyamoto, K. Furuya and R. Takemura | Atomically flat OMVPE growth of GaInAs and InP observed by AFM for level narrowing in resonant tunneling diodes | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Cryst. Growth | 179[1-2] | 1997 | 18-25 | |
| Author | Title of Article | |||
| Oobo, R. Takemura, M. Suhara, Y. Miyamoto and K. Furuya | High peak to valley current ratio GaInAs/GaInP resonant tunneling diodes | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 36[8] | 1997 | 5079-5080 | |
| Author | Title of Article | |||
| H. Hongo, Y. Miyamoto, M. Gault and K. Furuya | Influence of a finite energy width in electron distribution to an experiment of hot electron double-slit interference-a design of the emitter structure | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Appl. Phys. | 82[8] | 1997 | 3846-3852 | |
| Author | Title of Article | |||
| H. Hongo, H. Tanaka, Y. Miyamoto, J. Yoshinaga and K. Furuya | Electrical properties of 100nm pitch Cr/Au fine electrodes with 40nm width on GaInAs | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 35[8A] | 1996 | L964-L967 | |
| Author | Title of Article | |||
| F. Vazquez, D. Kobayashi, I. Kobayashi, Y. Miyamoto, K. Furuya, T. Maruyama, M. Watanabe and M. Asada | Detection of hot electron current with scanning hot electron microscopy | |||
| Journal | Volume | Year | Pages Concerned | |
| Appl. Phys. Lett. | 68[15] | 1996 | 2196-2198 | |
| Author | Title of Article | |||
| R. Takemura, M. Suhara, Y. Miyamoto, K. Furuya and Y. Nakamura | Current-voltage characteristics of triple-barrier resonant tunneling diodes including coherent and incoherent tunneling process | |||
| Journal | Volume | Year | Pages Concerned | |
| IEICE of Jpn. | E-79C[11] | 1996 | 1525-1529 | |
| Author | Title of Article | |||
| H. Hongo, T. Hattori, Y. Miyamoto, K. Furuya, K. Matsunuma, M. Watanabe and M. Asada | Seventy nm pitch patterning on CaF2 by e-beam exposure An inorganic resist and a contamination resist | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 35[12A] | 1996 | 6342-6343 | |
| Author | Title of Article | |||
| M. M. Raj, J. Wiedmann, S. Toyoshima, Y. Saka, K. Ebihara and S. Arai | High-reflectivity semiconductor/ benzocyclobutene Bragg reflector mirrors for GaInAsP/InP lasers" | |||
| Journal | Volume | Year | Pages Concerned | |
| to be published in Jpn. J. Appl. Phys. | 40[4A] | 2001 | ||
| Author | Title of Article | |||
| N. Nunoya, M. Nakamura, M. Morshed, S. Tamura and S. Arai | High-performance 1.55 μm wavelength GaInAsP/InP distributed feedback lasers with wirelike active regions | |||
| Journal | Volume | Year | Pages Concerned | |
| to be published in IEEE J. Select. Topics Quantum Electron. | 7[3] | 2001 | ||
| Author | Title of Article | |||
| M. M. Raj, J. Wiedmann, Y. Saka, K. Ebihara and S. Arai | Highly uniform 1.5 μm wavelength deeply etched semiconductor/bcnzocyclobutene distributed Bragg reflector lasers | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 39[12B] | 2000 | L1297-L1299 | |
| Author | Title of Article | |||
| N. Nunoya, H. Yasumoto, H. Midorikawa, S. Tamura and S. Arai | Low threshold current density operation of GaInAsP/InP lasers with strain-compensated multi-layered wirelike active regions | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 39[10B] | 2000 | L1042-L1045 | |
| Author | Title of Article | |||
| M. M. Raj, N. Serizawa and S. Arai | Theoretical analysis of GaInAsP/InP multiple micro-cavity laser | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 39[10A] | 2000 | 5847-5854 | |
| Author | Title of Article | |||
| J. Wiedmann, M. M. Raj, Y. Saka, S. Tamura and S. Arai | Singlemode operation of deeply etched coupled cavity laser with DBR facet | |||
| Journal | Volume | Year | Pages Concerned | |
| Electron. Lett. | 36[14] | 2000 | 1211-1212 | |
| Author | Title of Article | |||
| N. Nunoya, M. Nakamura, H. Yasumoto, M. Morshed, K. Fukuda, S. Tamura and S. Arai | Sub-milliampere operation of 1.5 μm wavelength high index-coupled buried heterostructure distributed feedback lasers | |||
| Journal | Volume | Year | Pages Concerned | |
| Electron. Lett. | 36[14] | 2000 | 1213-1214 | |
| Author | Title of Article | |||
| M. Nakamura, N. Nunoya, H. Yasumoto, M. Morshed, K. Fukuda, S. Tamura and S. Arai | Very low threshold current density operation of 1.5 μm DFB lasers with wire-like active regions | |||
| Journal | Volume | Year | Pages Concerned | |
| Electron. Lett. | 36[7] | 2000 | 639-640 | |
| Author | Title of Article | |||
| N. Nunoya, M. Nakamura, H. Yasumoto, S. Tamura and S. Arai | GaInAsP/InP multiple-layered quantum-wire lasers | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 39[6A] | 2000 | 3410-3415 | |
| Author | Title of Article | |||
| M. Madhan Raj, Y. Saka, J. Wiedmann, H. Yasumoto and S. Arai | Continuous wave operation of 1.55 μm GaInAsP/InP laser with semiconductor/benzocyclobutene distributed Bragg reflector | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 38[11A] | 1999 | L1240-L1242 | |
| Author | Title of Article | |||
| N. Nunoya, M. Nakamura, M. Tamura and S. Arai | Characterization of etching damage in C12/H2-reactive-ion-etching of GaInAsP/InP heterostructure | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 38[12A] | 1999 | 6942-6946 | |
| Author | Title of Article | |||
| N. Nunoya, M. Nakamura, H. Yasumoto, S. Tamura and S. Arai | Low threshold GaInAsP/InP distributed feedback lasers with periodic wire active regions | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 38[11B] | 1999 | L1323-L1326 | |
| Author | Title of Article | |||
| T. Kojima, S. Tanaka, H. Yasumoto, S. Tamura and S. Arai | Evaluation of optical gain properties of GaInAsP/InP compressively strained quantum-wire lasers | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 38[11A] | 1999 | 6327-6334 | |
| Author | Title of Article | |||
| D. Lubbert, B. Jenichen, T. Baumbach, H. T. Grahn, G. Paris, A. Mazuelas, T. Kojima and S. Arai | Elastic stress relaxation in GaInAsP quantum wire on InP | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Phys. D:Appl. Phys. | 32 | 1999 | A21-A25 | |
| Author | Title of Article | |||
| M. Madhan Raj, S. Toyoshima, and S. Arai | Multiple micro-cavity laser with benzocyclobutene/ semiconductor high reflective mirrors fabricated by CH4/H2-reactive ion etching | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 38[7B] | 1999 | L811-L814 | |
| Author | Title of Article | |||
| M. Madhan Raj, J. Wiedmann, Y. Saka, H. Yasumoto and S. Arai | 1.5 μm wavelength DBR lasers consisting of 31/4-semiconductor and 31/4-groove buried with benzocyclobutene | |||
| Journal | Volume | Year | Pages Concerned | |
| Electron. Lett. | 35[16] | 1999 | 1335-1337 | |
| Author | Title of Article | |||
| T. Kojima, H. Nakaya, S. Tanaka, H. Yasumoto, S. Tamura and S. Arai | Temperature dependence of internal quantum efficiency of 20nm-wide GaInAsP/InP compressively strained quantum-wire lasers | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 38[1B] | 1999 | 585-588 | |
| Author | Title of Article | |||
| M. Madhan Raj, K. Numata, S. Toyoshima, and S. Arai | GaInAsP/InP multiple short cavity laser with 1/4-air gap/ semiconductor Bragg reflectors | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 37[12A] | 1998 | L1461-L1464 | |
| Author | Title of Article | |||
| T. Kojima, S. Arai and G. U. Bacher | Anisotropic polarization properties of photoluminescence from GaInAsP/InP quantum-wire structures fabricated by two-step organometallic vapor phase epitaxy growth | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 37[1A/B] | 1998 | L46-L49 | |
| Author | Title of Article | |||
| M. Tamura, T. Ando, N. Nunoya, S. Tamura, S. Arai and G. U. Bacher | Estimation of sidewall recombination in GaInAsP/InP wire structures fabricated by low energy electron-cyclotron-resonance reactive-ion-beam-etching | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 37[6A] | 1998 | 3576-3584 | |
| Author | Title of Article | |||
| B. Jenichen, H. T. Grahn, T. Kojima and S. Arai | Lateral periodicity and elastic stress relaxation in GaInAsP quantum wires on InP investigated by X-ray diffractometry | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Appl. Phys. | 83[11] | 1998 | 5810-5813 | |
| Author | Title of Article | |||
| T. Kojima, M. Tamura, H. Nakaya, S. Tanaka, S. Tamura and S. Arai | GaInAsP/InP compressively strained quantum-wire lasers fabricated by electron beam lithography and 2-step organometallic vapor phase epitaxy | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 37[9A] | 1998 | 4792-4800 | |
| Author | Title of Article | |||
| T. Kojima, X. Y. Jia, Y. Hayafune, S. Tamura, M. Watanabe and S. Arai | Size fluctuation of 50nm periodic GaInAsP/InP wire structure by electron beam lithography and wet chemical etching | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 37[11A] | 1998 | 5961-5962 | |
| Author | Title of Article | |||
| T. Kojima, S. Tanaka, H. Yasumoto, H. Nakaya, S. Tamura and S. Arai | Gain spectrum measurement of GaInAsP/InP compressively-strained quantum-wire lasers | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 37[11B] | 1998 | L1386-L1389 | |
| Author | Title of Article | |||
| M. Tamura, T. Kojima, T. Ando, N. Nunoya, S. Tamura, S. Arai | Sidewall recombination velocity in GaInAsP/InP quantum-well lasers with wire-like active region fabricated by wet-chemical etching and organo-metallic vapor-phase-epitaxial growth | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 37[12A] | 1998 | 6569-6574 | |
| Author | Title of Article | |||
| M. Madhan Raj, S. Arai and M. Tamura | Photon recycling effect in semiconductor lasers low using dimensional structures | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 36[10A] | 1997 | 6368-6375 | |
| Author | Title of Article | |||
| K. C. Shin, N. Serizawa, M. Madhan Raj, and S. Arai | Drive current and design consideration of an ultra-low threshold current laser for optical parallel data communication | |||
| Journal | Volume | Year | Pages Concerned | |
| IEEE Lightwave Technol. | 15[5] | 1997 | 845-851 | |
| Author | Title of Article | |||
| T. Takizawa, A. Uchino, and S. Arai | Proposal of semiconductor directional-coupler-type all-optical switch with tapered-waveguide structure | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 36[3A] | 1997 | 1060-1067 | |
| Author | Title of Article | |||
| T. Takizawa, A. Uchino, and S. Arai | Switching operation of GaInAs/InP multiple-quantum-well directional-coupler-type all-optical switch | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 36[2A] | 1997 | L110-L113 | |
| Author | Title of Article | |||
| K. C. Shin, M. Tamura, N. Serizawa, S. Kurihashi, S. Tamura, and S. Arai | Fabrication and low threshold current density operation of GaInAsP/InP multiple-reflector microcavity laser | |||
| Journal | Volume | Year | Pages Concerned | |
| Optical and Quantum Electron. | 28 | 1996 | 487-493 | |
| Author | Title of Article | |||
| M. Tamura, K. C. Shin, N. Serizawa, and S. Arai | Stripe direction dependence of mesa angle formed on (100) InP by selective etching using HCl solution | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 35[4A] | 1996 | 2383-2384 | |
| Author | Title of Article | |||
| T. Takizawa, M. Nakahara, E. Kikuno, and S. Arai | Fabrication of 60nm pitch ordered InP pillars by EB-lithography and anodization | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Electron. Materials | 25[4] | 1996 | 657-660 | |
| Author | Title of Article | |||
| T. Kageyama, T. Miyamoto, S. Makino, Y. Ikenaga, N. Nishiyama, A. Matsutani, F. Koyama and K. Iga | Room temperature continuous-wave operation of GaInNAs/GaAs VCSELs grown by chemical beam epitaxy with output power exceeding 1mW | |||
| Journal | Volume | Year | Pages Concerned | |
| Electron. Lett. | 37 | 2001 | 225-226 | |
| Author | Title of Article | |||
| S. Makino, T. Miyamoto, T. Kageyama, N. Nishiyama, F. Koyama and K. Iga | GaInNAs/GaAs quantum dots grown by chemical beam epitaxy | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Crystal Growth | 221 | 2000 | 561-565 | |
| Author | Title of Article | |||
| T. Kageyama, T. Miyamoto, S. Makino, F. Koyama and K. Iga | Optical quality of GaNAs and GaInNAs and its dependence on RF cell condition in chemical beam epitaxy | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Crystal Growth | 209 | 2000 | 350-354 | |
| Author | Title of Article | |||
| T. Miyamoto, T. Kageyama, S. Makino, D. Schlenker, F. Koyama and K. Iga | CBE and MOCVD growth of GaInNAs | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Crystal Growth | 209 | 2000 | 339-344 | |
| Author | Title of Article | |||
| T. Kageyama, T. Miyamoto, S. Makino, F. Koyama and K. Iga | High-temperature operation up to 170 C of GaInNAs-GaAs quantum-well lasers grown by chemical beam epitaxy | |||
| Journal | Volume | Year | Pages Concerned | |
| IEEE Photon. Technol. Lett. | 12[1] | 2000 | 10-12 | |
| Author | Title of Article | |||
| T. Miyamoto, K. Takeuchi, T. Kageyama, F. Koyama and K. Iga | Chemical beam epitaxy of GaInNAs/GaAs quantum wells and its optical absorption property | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Crystal Growth | 197 | 1999 | 67-72 | |
| Author | Title of Article | |||
| T. Kageyama, T. Miyamoto, S. Makino, F. Koyama and K. Iga | Thermal annealing of GaInNAs/GaAs quantum wells grown by chemical beam epitaxy and its effect upon photoluminescence | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 38[3B] | 1999 | L298-L300 | |
| Author | Title of Article | |||
| K. Takeuchi, T. Miyamoto, T. Kageyama, F. Koyama and K. Iga | Chemical beam epitaxy growth and characterization of GaNAs/GaAs | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 37[3B] | 1998 | 1603-1607 | |
| Author | Title of Article | |||
| T. Miyamoto, K. Takeuchi, T. Kageyama, F. Koyama and K. Iga | GaInNAs/GaAs quantum well growth by chemical beam epitaxy | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 37[1] | 1998 | 90-91 | |
| Author | Title of Article | |||
| T. Miyamoto, K. Takeuchi, F. Koyama and K. Iga | Novel GaInNAs/GaAs quantum well structure for long wavelength semiconductor lasers | |||
| Journal | Volume | Year | Pages Concerned | |
| IEEE Photon. Technol. Lett. | 9[11] | 1997 | 1448-1450 | |
| Author | Title of Article | |||
| T. Kobori and K. Tsutsui | Molecular-beam epitaxy of conductive CdF2 films on Si substrates by simultaneous Cd exposure | |||
| Journal | Volume | Year | Pages Concerned | |
| Appl. Phys. Lett. | 78[10] | 2001 | 1406-1408 | |
| Author | Title of Article | |||
| T. Gotoh, H. Kambayashi and K. Tsutsui | Epitaxial growth of CaxCd1-xF2 mixed crystal films on Si substrates | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 39[5B] | 2000 | L476-L478 | |
| Author | Title of Article | |||
| K. Tsutsui, K. Kawasaki, M. Mochizuki and T. Matsubara | Site controlled metal and semiconductor quantum dots on epitaxial fluoride films | |||
| Journal | Volume | Year | Pages Concerned | |
| Microelectronic Engineering | 47 | 1999 | 135-137 | |
| Author | Title of Article | |||
| K. Kawasaki and K. Tsutsui | Surface free energy modification of CaF2 by atomic-height island formation on heteroepitaxy of GaAs on CaF2 | |||
| Journal | Volume | Year | Pages Concerned | |
| Appl. Surf. Sci. | 130-132 | 1998 | 464-468 | |
| Author | Title of Article | |||
| K. Kawasaki, M. Mochizuki, J. Takeshita and K. Tsutsui | Multitunneling junction of metal droplets formed on CaF2 step edges in a self-assembling manner | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 37[3B] | 1998 | 1508-1513 | |
| Author | Title of Article | |||
| Izumi, K. Tsutsui and N. S. Sokolov | Heteroepitaxial growth of CdF2 layers on CaF2/Si(111)by molecular beam epitaxy | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 37[1A] | 1998 | 295-296 | |
| Author | Title of Article | |||
| K. Uejima, J. Takeshita, K. Kawasaki and K. Tsutsui | Artificial control of dot sites for Ga droplet arrays on CaF2 films by surface steps and electron beam modifications | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 36[6B] | 1997 | 4088-4091 | |
| Author | Title of Article | |||
| Izumi, N. Matsubara, Y. Kushida, K. Tsutsui and N. S. Sokolov | CdF2/CaF2 resonant tunneling diode fabricated on Si(111) | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 36[3B] | 1997 | 1849-1852 | |
| Author | Title of Article | |||
| K. Tsutsui, K. Uejima and K. Kawasaki | Fabrication of site-controlled metal dot array by electron beam surface modification | |||
| Journal | Volume | Year | Pages Concerned | |
| Microelectronic Engineering | 35 | 1997 | 245-248 | |
| Author | Title of Article | |||
| Izumi, K. Kawabata, K. Tsutsui, N. S. Sokolov, S. V. Novikov and A. Yu. Khilko | Growth of CdF/CaF2/Si(111) heterostructure with abrupt interfaces by using thin CaF2 buffer layer | |||
| Journal | Volume | Year | Pages Concerned | |
| Appl. Surf. Sci. | 104/105 | 1996 | 417-421 | |
| Author | Title of Article | |||
| K. Kawasaki, K. Uejima and K. Tsutsui | Site control of Ga droplet array on CaF2 by surface modification using a focused electron beam | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 35[12B] | 1996 | 6689-6695 | |
| Author | Title of Article | |||
| M. Watanabe, Y. Iketani M. Asada | Epitaxial growth and electrical characteristics of CaF2/Si/CaF2 resonant tunneling diode structures grown on Si(111) 1 -off substrate | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 39[10A] | 2000 | L964-L967 | |
| Author | Title of Article | |||
| M. Watanabe, T. Funayama, T. Teraji and N. Sakamaki | CaF2/CdF2 double-barrier resonant tunneling diode with high room-temperature peak-to-valley ratio | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 39[7B] | 2000 | L716-L719 | |
| Author | Title of Article | |||
| M. Watanabe, Y. Maeda and S. Okano | Epitaxial growth and ultraviolet photoluminescence of CaF2/ZnO/CaF2 heterostructures on Si(111) | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 39[6A] | 2000 | L500-L502 | |
| Author | Title of Article | |||
| T. Maruyama, N. Nakamura and M. Watanabe | Improvement of the visible electroluminescence from nanocrystalline silicon embedded in CaF2 on Si(111) substrate prepared by rapid thermal annealling | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 39[4B] | 2000 | 1996-2000 | |
| Author | Title of Article | |||
| T. Maruyama, N. Nakamura and M. Watanabe | Visible electroluminescence from nanocrystalline silicon embedded in single-crystalline CaF2/Si(111) with rapid thermal anneal | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 38[8B] | 1999 | L904-L906 | |
| Author | Title of Article | |||
| M. Tsutsui, M. Watanabe and M. Asada | Resonant tunneling diodes in Si/CaF2 heterostructures grown by molecular beam epitaxy | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 38[8B] | 1999 | L920-L922 | |
| Author | Title of Article | |||
| M. Watanabe, T. Maruyama and S. Ikeda | Light emission from Si nanocrystals embedded in CaF2 epilayers on Si(111): effect of rapid thermal annealing | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Luminescence | 80 | 1999 | 253-256 | |
| Author | Title of Article | |||
| M. Watanabe, Y. Aoki, W. Saitoh and M. Tsuganezawa | Negative differential resistance of CdF2/CaF2 resonant tunneling diode on Si(111) grown by partially ionized beam epitaxy | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 38[2A] | 1999 | L116-L118 | |
| Author | Title of Article | |||
| M. Watanabe, T. Matsunuma, T. Maruyama and Y. Maeda | Electroluminescence of nanocrystal Si embedded in single-crystal CaF2/Si(111) | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 37[5B] | 1998 | L591-L593 | |
| Author | Title of Article | |||
| M. Watanabe, W. Saitoh, Y. Aoki and J. Nishiyama | Epitaxial growth of nanometer-thick CaF2/CdF2 heterostructures using partially ionized beam epitaxy | |||
| Journal | Volume | Year | Pages Concerned | |
| Solid State Electron. | 42[7-8] | 1998 | 1627-1630 | |
| Author | Title of Article | |||
| W. Saitoh, K. Mori, H. Sugiura, T. Maruyama, M. Watanabe and M. Asada | Reduction of electriacl resistance of nanometer-thick CoSi2 film on CaF2 by pseudomorphic growth of CaF2 on Si(111) | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 36[7A] | 1997 | 4470-4471 | |
| Author | Title of Article | |||
| F. Vazquez, D. Kobayashi, I. Kobayashi, Y. Miyamoto, K, Furuya, T. Maruyama, M. Watanebe and M. Asada | Detection of hot electron current with scanning hot electron microscopy | |||
| Journal | Volume | Year | Pages Concerned | |
| Appl. Phys. Lett. | 69[15] | 1996 | 2196-2198 | |
| Author | Title of Article | |||
| W. Saitoh, K. Yamazaki, M. Asada and M. Watanabe | Proposal and analysis of very short channel field effect transistor using vertical tunneling with new heterostructures on silicon | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 35[9A] | 1996 | L1104-L1106 | |
| Author | Title of Article | |||
| H. Hongo, T. Hattori, Y. Miyamoto, K. Furuya, T. Matsunuma, M. Watanabe and M. Asada | Seventy nm pitch patternings on CaF2 by e-beam exposure: an inorganic rcsist and a contamination resist | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 35[12A] | 1996 | 6342-6343 | |
| Author | Title of Article | |||
| T. Suemasu, W. Saitoh, Y. Kohno, K. Mori, M. Watanabe and M. Asada | Transfer efficiency of hot electrons in a metal(CoSi2)/ insulator(CaF2) quantum interference transistor | |||
| Journal | Volume | Year | Pages Concerned | |
| Surface science | 361/362 | 1996 | 209-212 | |
| Author | Title of Article | |||
| M. Watanabe, F. Iizuka and M. Asada | Visible light emission from nanocrystalline silicon embedded in CaF2 layers on Si(111) | |||
| Journal | Volume | Year | Pages Concerned | |
| IEICE Trans. | E79-C[11] | 1996 | 1562-1567 | |
| Author | Title of Article | |||
| M. Asada, Y. Oguma and N. Sashinaka | Estimation of interwell terahertz gain by photon-assisted tunneling measurement in triple-barrier resonant tunneling diodes | |||
| Journal | Volume | Year | Pages Concerned | |
| Appl. Phys. Lett. | 77[5] | 2000 | 618-620 | |
| Author | Title of Article | |||
| N. Sashinaka, Y. Oguma and M. Asada | Observation of terahertz photon-assisted tunneling in triple-barrier resonant tunneling diodes integrated with patch antenna | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 39[8] | 2000 | 4899-4903 | |
| Author | Title of Article | |||
| Itoh, M. Saitoh and M. Asada | A 25-nm-long channel metal-gate p-type Schottky source/drain metal-oxide-semiconductor field effect transitor on separation-by-implanted-oxygen substrate | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 39[8] | 2000 | 4757-4758 | |
| Author | Title of Article | |||
| W. Saitoh, A. Itoh, S. Yamagami and M. Asada | Analysis of short-channel Schottky source/drain metal-oxide-semiconductor field-effect transistor on silicon-on-insulator substrate and demonstration of sub-50nm n-type devices with metal gate | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 38[11] | 1999 | 6226-6231 | |
| Author | Title of Article | |||
| W. Saitoh, S. Yamagami, A. Itoh and M. Asada | 35nm metal gate p-type metal oxide semiconductor field-effect transistor with PtSi Schottky source/drain on separation by implanted oxygen substrate | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 38[6A] | 1999 | L629-L631 | |
| Author | Title of Article | |||
| Y. Oguma, N. Sashinaka and M. Asada | Terahertz response with dradual change from square-law detection to photon-assisted tunneling in tripple-barrier resonant tunneling diodes | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 38[7A] | 1999 | L717-L719 | |
| Author | Title of Article | |||
| N. Kikegawa, B. Zhang, Y. Ikeda, N. Sakai, K. Furuya, M. Asada, M. Watanabe and W. Saitoh | Detection time shortening for observation of hot electron spatial distribution by scanning hot electron microscope | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 38[4A] | 1999 | 2108-2113 | |
| Author | Title of Article | |||
| M. Asada, K. Osada and W. Saitoh | Theoretical analysis and fabrication of small area metal/insulator resonant tunneling diode integrated with patch antenna for terahertz photon assisted tunneling | |||
| Journal | Volume | Year | Pages Concerned | |
| Solid State Electron. | 42 | 1998 | 1543-1546 | |
| Author | Title of Article | |||
| M. Tsutsui, W. Saitoh, K. Yamazaki and M. Asada | Proposal and analysis of coupled channel tunneling FET with new heterostructures on silicon | |||
| Journal | Volume | Year | Pages Concerned | |
| Solid State Electron. | 42 | 1998 | 1547-1551 | |
| Author | Title of Article | |||
| W. Saitoh, K. Yamazaki, M. Tsutsui, A. Itoh and M. Asada | Fabrication and characteristics of a field effect transistor using CdF2/CaF2 heterostructures on Si substrate | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 37[10A] | 1998 | L1138-L1140 | |
| Author | Title of Article | |||
| W. Saitoh, K. Yamazaki, M. Tsutsui and M. Asada | Analysis of structure dependence of very short channel field effect transistor using vertical tunneling with heterostructures on silicon | |||
| Journal | Volume | Year | Pages Concerned | |
| IEICE Trans. Electron. | E81-C[12] | 1998 | 1918-1925 | |
| Author | Title of Article | |||
| W. Saitoh, K. Yamazaki, M. Tsutsui and M. Asada | Analysis of the influence of carrier scattering in the channel of a metal/insulator tunneling field effect transistor | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 37[11] | 1998 | 5921-5925 | |
| Author | Title of Article | |||
| M. Asada | Proposal and analysis of a three-terminal photon-assisted tunneling device operating in the terahertz frequency range | |||
| Journal | Volume | Year | Pages Concerned | |
| Trans. Electron. IEICE | E79-C[11] | 1996 | 1537-1542 | |
| Author | Title of Article | |||
| M. Asada | A possible three-terminal amplifier device in the terahertz frequency range using photon-assisted tunneling | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 35[6A] | 1996 | L685-L687 | |
| Author | Title of Article | |||
| Y. Kohno and M. Asada | Theoretical base current in metal/insulator resonant tunneling transistors based on electron wave scattered by base port structure | |||
| Journal | Volume | Year | Pages Concerned | |
| Physica B | 227 | 1996 | 216-219 | |