| 1.Research Institution | Toyo University | |
| 2.Research Area | Physical and Engineering Sciences | |
| 3.Research Field | Next Generation Process Technologies | |
| 4.Term of Project | FY1996〜FY2000 | |
| 5.Project Number | 96P00406 | |
| 6.Title of Project | Generation and Control of Large Area High Density Low Temperature Plasma and Its Industrial Applications |
| Name | Institution,Department | Title of Position |
| Yasuhiro, Horiike | Toyo University, Faculty of Engineering | Visiting Professor |
8.Core Members
| Names | Institution,Department | Title of Position |
| Takuo, Sugano | Toyo University, Faculty of Engineering | Professor |
| Yukio, Okamoto | Toyo University, Faculty of Engineering | Professor |
| Yasuhiko, Yoshida | Toyo University, Faculty of Engineering | Professor |
9.Cooperating Researchers
| Names | Institution,Department | Title of Position |
| Haruo, Shindo | Tokai University, Faculty of Engineering | Professor |
| Takanori, Ichiki | Toyo University, Faculty of Engineering | Associate Professor |
| Yuzuru, Takamura | The University of Tokyo, Graduate school of Engineering | Research Associate |
10.Summary of Research Results
|
A summary of "Generatin and Control of Large Area High Density Low Temperature Plasma and its Industrial Applications" which has been studied for five years from 1996 to 2001 is reported as follows. In the study on low temperature, high density and large diameter plasma generation, a planer type neutral discharge (NLD) using permanent magnets, microwave surface wave plasma using a ring-slot antenna or a window materials with high dielectric constant and reverse current driven ICP (inductively coupled plasma) was developed for 30 cm diameter based on their controls with antenna structures, time-modulation and downstream arrangement. The following applications were developed employing these original plasma sources: At first, ultra high aspect ratio SiO2 contact hole etching in the ULSI process was achieved by the residence-time control in C4F8 ICP. It was also found that the high aspect ratio structure was determined at an adequate total flow rate in this system. A HFE227 of substituting fluorocarbon gases and tetramethyl silane mixture enabled us to fabricate no microloading etching till 50 nm for holes and 20 nm for gaps. The study on an wall interaction with fluorocarbon plasmas revealed that the hotter wall changed higher order radical species to lower ones, probably leading to "etch stop" issue. Generation of negative ions by attachment of low energy electrons at the downstream was also studied. In the application of the negative ions, Cl- ions provided a high etching yield for Si, and O- ion enhanced considerably oxidation of Si under an RF biasing. Cl2 ICP generated at the downstream realized Cr reticle mask etching using by an excellent high selectivity to resists. Above-mentioned oxide etching opened a new application of a microcapillary chip. The technology allowed to develop "health care chip" which checked daily health condition by analysis of trace blood and "cell sorter chip" employing a dielectric electrophoresis. Finally, a MeTPP thin film fabricated by plasma polymerization of a metal porphyrin complex on a ITO substrate was found to indicate p type semiconductor and a sensitive glucose sensor. |
11.Key Words
(1)low pressure plasma、(2)high density plasma、(3)large area plasma
(4)plasma control、(5)high aspect ratio hole、(6)negative ions
(7)downstream、(8)metal porphyrin complex、(9)bio chip
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| Author | Title of Book | ||
| Y.Horiike(coauther) | Next generation ULSI process technology | ||
| Publisher | Year | Pages | |
| Realize sha Co.,Ltd. | 1999 | 825 | |
| Author | Title of Book | ||
| Y.Horiike(coauther) | Dictioinary of semiconductor Technology & Industry | ||
| Publisher | Year | Pages | |
| Kogyochosakai Co.,Ltd. | 1999 | 2011 | |
| Author | Title of Book | ||
| Y.Horiike, T.Hayashi | Etching technology"Super fine fabrication technology" | ||
| Publisher | Year | Pages | |
| J.Research of Sci. and Technol | 1997 | 309 | |