Summary of Research Project Results Under the JSPS FY2000
"Research for the future Program"



1.Research Institution Toyo University
 
2.Research Area Physical and Engineering Sciences
 
3.Research Field Next Generation Process Technologies
 
4.Term of Project FY1996〜FY2000
 
5.Project Number 96P00406
 
6.Title of Project Generation and Control of Large Area High Density Low Temperature Plasma and Its Industrial Applications

7.Projetct Leader
Name Institution,Department Title of Position
Yasuhiro, Horiike Toyo University, Faculty of Engineering Visiting Professor

8.Core Members

Names Institution,Department Title of Position
Takuo, Sugano Toyo University, Faculty of Engineering Professor
Yukio, Okamoto Toyo University, Faculty of Engineering Professor
Yasuhiko, Yoshida Toyo University, Faculty of Engineering Professor

9.Cooperating Researchers

Names Institution,Department Title of Position
Haruo, Shindo Tokai University, Faculty of Engineering Professor
Takanori, Ichiki Toyo University, Faculty of Engineering Associate Professor
Yuzuru, Takamura The University of Tokyo, Graduate school of Engineering Research Associate

10.Summary of Research Results

A summary of "Generatin and Control of Large Area High Density Low Temperature Plasma and its Industrial Applications" which has been studied for five years from 1996 to 2001 is reported as follows. In the study on low temperature, high density and large diameter plasma generation, a planer type neutral discharge (NLD) using permanent magnets, microwave surface wave plasma using a ring-slot antenna or a window materials with high dielectric constant and reverse current driven ICP (inductively coupled plasma) was developed for 30 cm diameter based on their controls with antenna structures, time-modulation and downstream arrangement. The following applications were developed employing these original plasma sources: At first, ultra high aspect ratio SiO2 contact hole etching in the ULSI process was achieved by the residence-time control in C4F8 ICP. It was also found that the high aspect ratio structure was determined at an adequate total flow rate in this system. A HFE227 of substituting fluorocarbon gases and tetramethyl silane mixture enabled us to fabricate no microloading etching till 50 nm for holes and 20 nm for gaps. The study on an wall interaction with fluorocarbon plasmas revealed that the hotter wall changed higher order radical species to lower ones, probably leading to "etch stop" issue. Generation of negative ions by attachment of low energy electrons at the downstream was also studied. In the application of the negative ions, Cl- ions provided a high etching yield for Si, and O- ion enhanced considerably oxidation of Si under an RF biasing. Cl2 ICP generated at the downstream realized Cr reticle mask etching using by an excellent high selectivity to resists. Above-mentioned oxide etching opened a new application of a microcapillary chip. The technology allowed to develop "health care chip" which checked daily health condition by analysis of trace blood and "cell sorter chip" employing a dielectric electrophoresis. Finally, a MeTPP thin film fabricated by plasma polymerization of a metal porphyrin complex on a ITO substrate was found to indicate p type semiconductor and a sensitive glucose sensor.

11.Key Words

(1)low pressure plasma、(2)high density plasma、(3)large area plasma
(4)plasma control、(5)high aspect ratio hole、(6)negative ions
(7)downstream、(8)metal porphyrin complex、(9)bio chip

12.References

[Reference Articles]
Author Title of Article
T. Ohgushi et al. Characteristics of Time Modulated Surface Wave Argon Plasma
Journal Volume Year Pages Concerned
Appl. Surf. Sci. 169-170 2001 593-598

Author Title of Article
A. Oki, et al. Electroosmosis Injection of Blood Serum into Biocompatible Microcapillary Chip Fabricated on Quartz Plate
Journal Volume Year Pages Concerned
Electrophoresis 22 2001 341-347

Author Title of Article
P. W. Lee, et al. A New Inside-Type Segmented Coil Antenna for Uniformity Control in a Large-Area Inductively Coupled Plasma
Journal Volume Year Pages Concerned
Jpn. J. Appl. Phys. 39 2000 L548-L550

Author Title of Article
T. Ujiie, et al. Fabrication of Quartz Microcapillary Electrophoresis Chips Using Plasma Etching
Journal Volume Year Pages Concerned
Jpn. J. Appl. Phys. 39 2000 3677-3682

Author Title of Article
Y. Chinzei High Aspect Ratio SiO2 Etching with High Resist Selectivitiy Improved by Addition of Organicsilane to Tetrafluoroethyl ether (HFE 227)
Journal Volume Year Pages Concerned
J. Vac. Sci. Technol. A18(1) 2000 158-165

Author Title of Article
H. Oshio, et al. Run-to-Run Evolution of Fluorocarbon Radicals in C4F8 Plasmas Interacting with Cold and Hot Inner Walls
Journal Volume Year Pages Concerned
J. Electrochem. Soc. 147(11) 2000 4273-4278

Author Title of Article
T. Ichiki, et al. Precise Chrome Etching in Downstream Chlorine Plasmas with Electron Depletion through Negative Ion Production
Journal Volume Year Pages Concerned
J. Electrochem. Soc. 147(11) 2000 4289-4293

Author Title of Article
H. Shindo, et al. Electron Energy Control in an Inductively Coupled Plasma at Low Pressures
Journal Volume Year Pages Concerned
Appl. Phys. lett. 76(10) 2000 1246-1248

Author Title of Article
Y. Feurprier, et al. Microloading effect in Ultrafine SiO2 Hole/Trench Etching
Journal Volume Year Pages Concerned
J. Vac. Sci. Technol. A17(4) 1999 1556-1561

Author Title of Article
K. Nakamura, et al. Plasma Polymerization of Cobalt Tetraphenylporphyrin and the Functionalities of the Thin Films Produced
Journal Volume Year Pages Concerned
Thin Solid Films 345 1999 99-103

Author Title of Article
T. Fujii, et al. Enhancement of Negative-Ion-Assisted Silicon Oxidation by Radio-Frequency Bias
Journal Volume Year Pages Concerned
Jpn. J. Appl. Phys. 38 1999 L1466-L1468

Author Title of Article
H. Shindo, et al. Electron Energy Control in Inductively Coupled Plasma Employing Multimode Antenna
Journal Volume Year Pages Concerned
Jpn. J. Appl. Phys. 38 1999 L1066-L1069

Author Title of Article
T. Ichiki, et al. Charge Referencing of XPS Spectra from Fluorocarbon Polymer Films using Fluorine as an Internal Standard
Journal Volume Year Pages Concerned
J. Surf. Anal. 5(2) 1999 193-196

Author Title of Article
H. Shindo, et al. Negative Ion Assisted Silicon Oxidation with Transformer Coupled RF Bias
Journal Volume Year Pages Concerned
Surf. Coat. Technol. 116-119 1999 618-621

Author Title of Article
Y. Chinzei et al. Flow Rate Rule for High Aspect Ratio SiO2 Hole Etching
Journal Volume Year Pages Concerned
J. Vac. Sci. Technol. A16(3) 1998 1519-1524

Author Title of Article
Y. Chinzei et al. Residence Time Effects on SiO2/Si Selective Etching Employing High Density Fluorocarbon Plasma
Journal Volume Year Pages Concerned
J. Vac. Sci. Technol. B16(3) 1998 1043-1050

Author Title of Article
Y. Chinzei et al. Development and Plasma Characteristics Measurement of Plannar-Type Magnetic Neutral Loop Discharge Etcher
Journal Volume Year Pages Concerned
Jpn. J. Appl. Phys. 37(8) 1998 4572-4577

Author Title of Article
Y. Morikawa et al. Reaction of the Fluorine Atom and Molecule with the Hydrogen-terminated Si(111) Surface
Journal Volume Year Pages Concerned
J. Vac. Sci. Technol. A16(1) 1998 345-355

Author Title of Article
E. Kaneko et al. Characteristics of a Large-Diameter Surface-Wave Mode Microwave-Induced Plasma
Journal Volume Year Pages Concerned
Jpn. J. Appl. Phys. 37 1998 L170-L173

Author Title of Article
T. Koromogawa et al. Negative Ion Assisted Silicon Oxidation in Downstream of Microwave Plasma
Journal Volume Year Pages Concerned
Jpn. J. Appl. Phys. 37 1998 5028-5032

Author Title of Article
Y. Sawa et al. Excitation of Sheath Oscillating Current by Superimposing Pulse Voltage
Journal Volume Year Pages Concerned
Jpn. J. Appl. Phys. 37(1A) 1998 337-341

Author Title of Article
M. Furukawa et al. Production of Large-Diameter Microwave Plasma with a High-Permittivity Material Window
Journal Volume Year Pages Concerned
Jpn. J. Appl. Phys. 37 1998 L1005-L1007

Author Title of Article
S. Uchiyama et al. Formation of Aniline-Bonded Catechols in Aqueous Solution, and their Electrochemical Behaviors at Carbon Felt Elec Electroanalysis trode
Journal Volume Year Pages Concerned
Electroanalysis 10 1998 647-650

Author Title of Article
A. Ohtomo et al. Room Temperature Ultraviolet Laser Emission from ZnO Nanocrystal Thin Films Grown by Laser MBE
Journal Volume Year Pages Concerned
Materials Science and Engineering B54 1998 24-28

Author Title of Article
S. Toyama et al. Surface Design of SPR-Based Immunosensor for the Effective Binding of Antigen or Antibody in the Evanescent Field Using Mixed Polymer Matrix
Journal Volume Year Pages Concerned
Sens. & Actu. B52 1998 65-71

Author Title of Article
T. Ichiki, et al. Gap-Filling of Cu Employing Sustained Self-Sputtering with ICP Ionization
Journal Volume Year Pages Concerned
Jpn. J. Appl. Phys. 36 1997 1469-1472

Author Title of Article
H. Shindo et al. Heliconwave Plasma Which Contains Negative Ion
Journal Volume Year Pages Concerned
Jpn. J. Appl. Phys. 36 1997 333-336

Author Title of Article
M. Furukawa et al. A Model for Resolution Dependent Roughness Values Measured by an Optical Profiler Specific Surfaces
Journal Volume Year Pages Concerned
Jpn. J. Appl. Phys. 36 1997 3750-3754

Author Title of Article
R. Miyano et al. Basic Characteristics of New Plasma Sorce Using Coaxially Systematic Surface Wave in VHF Band
Journal Volume Year Pages Concerned
J. Research Insti. Sci. Technol. 9 1997 79-86

Author Title of Article
S. Uchiyama et al. Highly Sensitive Cyclic Voltammograms of 4-aminodiphenylamine Obtained by a Porous Carbon Felt Electrode, and Estimation of the Hydrolysis Rate Constant of its Quinonediimine State at a Neutral pH
Journal Volume Year Pages Concerned
Electroanalysis 9(11) 1997 822-826

Author Title of Article
T. Shibayama et al. Silicon Etching by Alternating Irradiation of Negative and Positive Ions
Journal Volume Year Pages Concerned
Plasma Sources Sci. Technol. 5 1996 254-259

Author Title of Article
J. Kikuchi et al. Cleaning of Silicon Surfaces by NF3 Added Hydrogen and Water-Vapor Plasma Downstream Treatment
Journal Volume Year Pages Concerned
Jpn. J. Appl. Phys. 35 1996 1022-1026

Author Title of Article
Y. Kobayashi et al. High Rate Bias Sputtering Filling of SiO2 Film Employing Both Continuous Wave and Time-Modulated Inductively Coupled Plasmas
Journal Volume Year Pages Concerned
Jpn. J. Appl. Phys. 35 1996 1474-1477

Author Title of Article
Y. Okamoto A Microwave-Induced Unmagnetized Plasma Source for Plasma Processing
Journal Volume Year Pages Concerned
Plasma Sources Sci. Technol. 5 1996 648-652

Author Title of Article
Y. Chinzei, et al. SiO2 Etching Employing Inductively Coupled Plasma with Hot Inner Wall
Journal Volume Year Pages Concerned
Jpn. J. Appl. Phys. 35 1996 2472-2476

Author Title of Article
N. Fukushima et al. High Rate and Smooth Surface Etching of Al2O3-TiC Employing Inductively Coupled Plasma(ICP)
Journal Volume Year Pages Concerned
Jpn. J. Appl. Phys. 35 1996 2512-2515

Author Title of Article
Y. Chinzei et al. Highly Selective SiO2/Si Etching and Related Kinetics in Time-Modulated Helicon Wave Plasma
Journal Volume Year Pages Concerned
Jpn. J. Appl. Phys. 35 1996 3585-3589

Author Title of Article
W. Miyazawa et al. A Large-Area ECR Processing Plasma
Journal Volume Year Pages Concerned
Plasma Sources Sci. & Technol. 5 1996 265-267

Author Title of Article
R. Miyano et al. New Plasma Sorce of Coaxially Symmetric Surface Wave in VHF Band
Journal Volume Year Pages Concerned
J. Research Insti. of Sci. and Technol. 8 1996 65-69

[Reference Books]
Author Title of Book
Y.Horiike(coauther) Next generation ULSI process technology
Publisher Year Pages
Realize sha Co.,Ltd. 1999 825

Author Title of Book
Y.Horiike(coauther) Dictioinary of semiconductor Technology & Industry
Publisher Year Pages
Kogyochosakai Co.,Ltd. 1999 2011

Author Title of Book
Y.Horiike, T.Hayashi Etching technology"Super fine fabrication technology"
Publisher Year Pages
J.Research of Sci. and Technol 1997 309


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