| 1.Research Institution | The University of Tokyo | |
| 2.Research Area | Physical and Engineering Sciences | |
| 3.Research Field | Next-generation Process Technologies | |
| 4.Term of Project | FY1996-FY2000 | |
| 5.Project Number | 96P00404 | |
| 6.Title of Project | Reversible interconnection of Dissimilar Materials |
| Name | Institution,Department | Title of Position |
| Tadatomo Suga | The University of Tokyo, RCAST | Professor |
8.Core Members
| Names | Institution,Department | Title of Position |
| Teruo Kishi | The University of Tokyo, RCAST | Professor |
| Hideki Ichinose | The University of Tokyo, Graduate School of Engineering | Associate Professor |
| Naoe Hosoda | The University of Tokyo, Graduate School of Engineering | Associate Professor |
9.Cooperating Researchers
| Names | Institution,Department | Title of Position |
| Ulrich Egger | The University of Tokyo, RCAST | Research Associate |
| Taek Ryong Chung | The University of Tokyo, RCAST | Research Associate |
| Park Young Jo | The University of Tokyo, RCAST | Research Associate |
10.Summary of Research Results
|
We proposed a new technology of a reversible interconnection for environmentally conscious engineering. The reversible interconnection is a new bonding technology which is able to realize a direct bonding of dissimilar materials, such as metals, ceramics and semiconductors, and to separate the joint at the joined interface. We proposed and performed here several methods of the reversible interconnection. One of the methods is technology to bond materials at low temperature, and separate them at the boundary face using hydrogen. Separation is done by inserting a hydrogen storage alloy that expands by absorbing hydrogen and micronizes, at the insertion layer in advance. The other method is technology to bond dissimilar materials directly at room temperature using the surface activated bonding method, and separate them by precipitation of a brittle intermediate layer at the bonded interface by heating. The mechanisms of weakening the interface strength and fracture of the interface were also clarified to systematize a new method for an interface design of dissimilar materials for the reversible interconnection. |
11.Key Words
(1)Reversible Interconnection、(2)Surface Activated Bonding、(3)Separation
(4)Interface、(5)Interface Design、(6)fracture
(7)hydrogen、(8)Transmission electron microscope、(9)environment
12.References
| Author | Title of Article | |||
| N. Hosoda, L. Yang, Y. Kyogoku and T. Suga | A bonding method which is designed for separating at interface:Reversible Interconnection | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Jpn. Inst. for Interconnecting and Packaging Electronic Circuits | 11-7 | 1996 | 510-513 | |
| Author | Title of Article | |||
| T. Takagi, K. Kikuchi, R. Maeda, T. R. Chung and T. Suga | Surface activated bonding of silicon wafers at room temperature | |||
| Journal | Volume | Year | Pages Concerned | |
| Appl. Phys. Lett. | 68-16 | 1996 | 2222-2224 | |
| Author | Title of Article | |||
| Y. Zhang, H. Ichinose, M. Nakanose, K. Ito and Y. Ishida | Transmission electron microscopic observation of grain boundaries in CVD diamond thin films | |||
| Journal | Volume | Year | Pages Concerned | |
| JOEL News | 32E | 1996 | 16-19 | |
| Author | Title of Article | |||
| Y. Zhang, H. Ichinose, K. Ito, Y. Ishida and M. Nakanose | Grain boundary structure and growth sequence of diamond thin film | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Electron Microscopy | 45 | 1996 | 436-441 | |
| Author | Title of Article | |||
| Y. Zhang, H. Ichinose, Y. Ishida, K. Ito and M. Nakanose | Atomic and electonics structures of grain boundary in chemical vapor deposited diamond thin films | |||
| Journal | Volume | Year | Pages Concerned | |
| Material Science Forum | 204 | 1996 | 207-214 | |
| Author | Title of Article | |||
| Y. Zhang, H. Ichinose, K. Ito and M. Nakanose | HRTEM and EELS analysis of asymmetrical Σ3 CSL boundaries in CVD diamond films | |||
| Journal | Volume | Year | Pages Concerned | |
| Mat. Res. Soc. Symp. Proc | 416 | 1996 | 355-360 | |
| Author | Title of Article | |||
| K. Kato, T. Ichimori, H. Ichinose, K. Ito and Y. Ishida | HRTEM study of segregation at grain boundary in Al | |||
| Journal | Volume | Year | Pages Concerned | |
| Proc. JIMIS-8 | 1 | 1996 | 213-216 | |
| Author | Title of Article | |||
| T. Ichimori, T. Kato, H. Ichinose, K. Ito and Y. Ishida | HRTEM analysis of Pz/ZnO metal/ceramic interface | |||
| Journal | Volume | Year | Pages Concerned | |
| Proc. JIMIS-8 | 1 | 1996 | 253-256 | |
| Author | Title of Article | |||
| H. Ichinose, Y. Zhang, K. Ito, Y. Ishida and M. Nakanose | Grain boundary structure and growth sequence of diamond thin film | |||
| Journal | Volume | Year | Pages Concerned | |
| Proc. JIMIS-8 | 1 | 1996 | 225-228 | |
| Author | Title of Article | |||
| T. Kizuka, H. Ichinose and Y. Ishida | Structure and hardness of nanocrystalline silver | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Japan Inst. Metals | 61-4 | 1997 | 319-325 | |
| Author | Title of Article | |||
| K. Kohyama, H. Ichinose, Y. Zhang, Y. Ishida and M. Nakanose | Tight-binding calculation of the {211}Σ=3 boundary in diamond | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Materials Sci | 32 | 1997 | 1051-1057 | |
| Author | Title of Article | |||
| H. Ishinose, Y. Zhang, Y. Ishida, K. Ito and M. Nakanose | Application of spatially resolved EELS on atomic structure determination of diamond grain | |||
| Journal | Volume | Year | Pages Concerned | |
| Proc. 13th Int. Symp. On Plasma Chemistry | 3 | 1997 | 1094-1099 | |
| Author | Title of Article | |||
| L. Yang, N. Hosoda and T. Suga | Investigation on the interface microstructure of stainless steel/aluminum joints created by the surface activated bonding method | |||
| Journal | Volume | Year | Pages Concerned | |
| Interface Science | 5 | 1997 | 279-286 | |
| Author | Title of Article | |||
| N. Hosoda, L. Yang and T. Suga | Reversible interconnection-an approach to debonding joined material at the bonded interface, ASME EEP | |||
| Journal | Volume | Year | Pages Concerned | |
| Advances in Electronic Packaging | 19-1 | 1997 | 307-312 | |
| Author | Title of Article | |||
| T. R. Chung, N. Hosoda, H. Takagi and T. Suga | 1. 3 μm InGaAs/InP lasers on GaAs substrate fabriccated by the surface activated wafer bonding method of room temperature | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Applied Physics | 72-13 | 1997 | 1565-1566 | |
| Author | Title of Article | |||
| H. Takagi, R. Maeda and T. Suga | Pressureless silicon direct bonding at room temperature by argon beam etching | |||
| Journal | Volume | Year | Pages Concerned | |
| Trans. IEEE of Japan | 117-E-8 | 1997 | 420-425 | |
| Author | Title of Article | |||
| T. R. Chung, L. Yang, N. Hosoda and T. Suga | Room temperature GaAs-Si and InP-Si wafer direct bonding by the surface activated bonding method | |||
| Journal | Volume | Year | Pages Concerned | |
| Nuclear Instruments and Methods in Physics Research | B121 | 1997 | 203-206 | |
| Author | Title of Article | |||
| T. Akatsu, G. Sasaki, N. Hosoda and T. Suga | Microstructure and strength of Al-sapphire interface by means of the surface activated bonding method | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Mater. Res. | 12-3 | 1997 | 852-856 | |
| Author | Title of Article | |||
| T. Suga, Y. Ishii and N. Hosoda | Microassembly system for integration of MEMS using the surface activated bonding method | |||
| Journal | Volume | Year | Pages Concerned | |
| IEICE Trans. Electron | E80-C | 1997 | 297-302 | |
| Author | Title of Article | |||
| L. Yang, N. Hosoda and T. Suga | TEM investigation of the stainless steel / aluminum interface created by the surface activated bonding method | |||
| Journal | Volume | Year | Pages Concerned | |
| Nuclear Instruments and Methods in Physics Research | B121 | 1997 | 519-523 | |
| Author | Title of Article | |||
| T. Suga, K. Saneshige and Jun Fujimoto | A consideration on the quantitative disassembly evalution | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Jpn. Inst. for Interconnecting and Packaging Electronic Circuits | 12-1 | 1997 | 34-40 | |
| Author | Title of Article | |||
| H. Ichinose and M. Nakanose | Atomic and Electronic structure of diamond grain boundary | |||
| Journal | Volume | Year | Pages Concerned | |
| JIM | 62 | 1998 | 15-21 | |
| Author | Title of Article | |||
| S. Yoshiike, H. Adachi, H. Ichinose, K. Tokumitsu, H. Ino and K. Siratori | Structure of melt-quenched Pr-Fe alloys and anaysis of the manetization based on super-ferromagnetism | |||
| Journal | Volume | Year | Pages Concerned | |
| Philosophical Magazine | 77-6 | 1998 | 1461-1469 | |
| Author | Title of Article | |||
| S. hoh, T. Kondo, T. Ishiwada, C. Iwamoto, H. Ichinose, H. Yaguchi, T. Usami, Y. Shiraki and R. Ito | Sublattice reversal in GaAs/Si/GaAs(100) heterostructures by molecular beam epitaxy, materials transactions | |||
| Journal | Volume | Year | Pages Concerned | |
| JIM | 39 | 1998 | 102-109 | |
| Author | Title of Article | |||
| H. Ichinose and M. Nakanose | Atomic and electronic structure of diamond grain boundaries analyzed by HRTEM and EELS | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 37 | 1998 | L1493-1496 | |
| Author | Title of Article | |||
| Y. Zhang, H. Ichinose, M. Nakanose, K. Ito and Y. Ishida | Structure modelling of Σ3 and Σ9 coincident boundaries in CVD diamond thin films | |||
| Journal | Volume | Year | Pages Concerned | |
| Thin Solid Films | 319 | 1998 | 87-91 | |
| Author | Title of Article | |||
| H. Takagi, R. Maeda, N. Hosoda and T. Suga | Si/Si interface bonded at room temperature by Ar beam surface activation | |||
| Journal | Volume | Year | Pages Concerned | |
| Intergranular and Interphase Boundaries in Materials | 1998 | 341-344 | ||
| Author | Title of Article | |||
| H. Takagi, R. Maeda, T. R. Chung and T. Suga | Low-temperature direct bonding of silicon and silicon dioxide by the surface activation method | |||
| Journal | Volume | Year | Pages Concerned | |
| Sensors and Actuators | A70 | 1998 | 164-170 | |
| Author | Title of Article | |||
| N. Hosoda, T. Akatsu, J. Chu and T. Suga | The effect of the surface roughness on room temperature bonding of metals to ceramics | |||
| Journal | Volume | Year | Pages Concerned | |
| Advances in Science and Technology | 15 | 1998 | 1091-1096 | |
| Author | Title of Article | |||
| H. Takagi, R. Maeda, N. Hosoda and T. Suga | Effect of surface roughness on room-temperature wafer bonding by Ar beam surface activation | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 37 | 1998 | 4197-4203 | |
| Author | Title of Article | |||
| T. Suga | UHV room temperature joining by the surface activated bonding method | |||
| Journal | Volume | Year | Pages Concerned | |
| Advances in Science and Technology | 15 | 1998 | 1079-1089 | |
| Author | Title of Article | |||
| T. Suga | Recent progress in surface activated bonding | |||
| Journal | Volume | Year | Pages Concerned | |
| Ceramic Microstructure | 1998 | 385-389 | ||
| Author | Title of Article | |||
| T. R. Chung, N. Hosoda and T. Suga and H. Takagi | InGaAsP lasers on GaAs fabricated by the surface activated wafer direct bonding method at room temperature | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 37 | 1998 | 1405-1407 | |
| Author | Title of Article | |||
| N. Hosoda, Y. Kyogoku and T. Suga | Effect of the surface treatment on the room-temperature bonding of Al to Si and SiO2 | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Material Science | 33-1 | 1998 | 253-258 | |
| Author | Title of Article | |||
| S. Ichikawa, H. Ichinose and K. Ito | Structure and deformation mechanism of Ag/Fe nano crystalline alloy | |||
| Journal | Volume | Year | Pages Concerned | |
| Materia | 37 | 1999 | 1007 | |
| Author | Title of Article | |||
| H. Ichinose | Crystal interface | |||
| Journal | Volume | Year | Pages Concerned | |
| Powder Metallurgy | 47 | 1999 | 412-416 | |
| Author | Title of Article | |||
| Y. Yamada-Takamura, O. Tsuda, H. Ichinose and T. Yoshida | Atomic-scale structure at the nucleation site of cubic boron nitride deposited from the vopor | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Electron Microscopy | 48 | 1999 | 245-251 | |
| Author | Title of Article | |||
| S. Kon, T. Kno, M. Ebara, T. Ishiwada, H. Sawada, H. Ichinose, I. Shoji and R. Ito | GaAs/Ge/GaAs sublattice reversal epitaxy on GaAs(100) and (111) substrates for nonlinear optical devices | |||
| Journal | Volume | Year | Pages Concerned | |
| Physical Review | 59 | 1999 | 10351-10355 | |
| Author | Title of Article | |||
| S. Ichikawa, K. Miyazawa, H. Ichinose and K. Ito | The microstructure of deformed nanocrystalline Ag and Ag/Fe alloy | |||
| Journal | Volume | Year | Pages Concerned | |
| J. J. Appl. Phys. | 38 | 1999 | L508-511 | |
| Author | Title of Article | |||
| H. Ichinose, H. Sawada, E. Takuma and M. Osaki | Atomic resolution HVEM and environmental noise, | |||
| Journal | Volume | Year | Pages Concerned | |
| Nano Structure Materials | 11 | 1999 | 1301-1311 | |
| Author | Title of Article | |||
| C. Iwamoto, H. Ichinose and S. Tanaka | Atomic observation at the reactive wetting front on SiC | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Electron Microscopy | 48 | 1999 | 887-891 | |
| Author | Title of Article | |||
| B. S. Xu, H. Ichinose and S. Tanaka | Twistangle dependence of Josephson Junction effect measured in the [001] twist boundary of Bi2Sr2CaCu20x super conductor | |||
| Journal | Volume | Year | Pages Concerned | |
| Phil. Mag. | 79 | 1999 | 85-95 | |
| Author | Title of Article | |||
| W. Wang, H. Matsuhata, T. Takahashi, Y. Ishida, H. Okumura, S. Yoshida, H. Sawada and H. Ichinose | Characterization of surface step on heteroepitaxial 3C-SiC thin films by TEM | |||
| Journal | Volume | Year | Pages Concerned | |
| Material Science Forum | 294-6 | 1999 | 263-268 | |
| Author | Title of Article | |||
| H. Sawada, H. Ichinose, D. Takeuchi and H. Okushi | A cross-sectional HRTEM study of particle defects in an epitaxial diamond film | |||
| Journal | Volume | Year | Pages Concerned | |
| Proc. Microsc. Semcond. Mater. Conf. | 1 | 1999 | 331-334 | |
| Author | Title of Article | |||
| H. Satsuki, T. Hayashi, M. Akaishi, K. Miyazawa, H. Ichinose and K. Ito | Microstructure of C60/Nanotube composites produced under high pressure | |||
| Journal | Volume | Year | Pages Concerned | |
| Proc. Inst. Phys. Conf. | 164 | 1999 | 235-238 | |
| Author | Title of Article | |||
| T. Kuzumaki, O. Ujiie, H. Ichinose and K. Ito | Mechanical characteristics and preparation of carbon nanotube fiber-reinforced Ti composite | |||
| Journal | Volume | Year | Pages Concerned | |
| Proc. JIMIC-3799 | 1 | 1999 | 1243-1246 | |
| Author | Title of Article | |||
| H. Takagi, R. Maeda, N. Hosoda and T. Suga | Room-temperature bonding of Si wafers to Pt films on SiO2 or LiNb03 substrates using Ar-beam surface activation | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 38 | 1999 | 1559-1561 | |
| Author | Title of Article | |||
| T. Akatsu, N. Hosoda, T. Suga and M. Ruhle | Atomic structure of Al/Al interface formed by surface activated bonding | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Materials Science | 34 | 1999 | 4133-4139 | |
| Author | Title of Article | |||
| H. Takagi, R. Maeda, N. Hosoda and T. Suga | Room-temperature bonding of lithium niobate and silicon wafers by argon-beam surface activation | |||
| Journal | Volume | Year | Pages Concerned | |
| Appl. Phys. Lett. | 74-16 | 1999 | 2387-2389 | |
| Author | Title of Article | |||
| Y. J. Park, M. Enoki. T. Suga and T. Kishi | Tensile properties and analysis of growth of interfacial defects by finite element method in Al/Sapphire joint fabricated by SAB process | |||
| Journal | Volume | Year | Pages Concerned | |
| JIM | 63-12 | 1999 | 1485-1489 | |
| Author | Title of Article | |||
| H. Takagi, R. Maeda, N. Hosoda and T. Suga | Transmission electron microscope observation of Si/Si interface bonded at room temperature by Ar beam surface activation | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 3-A | 1999 | 1589-1594 | |
| Author | Title of Article | |||
| H. Ichinose | Material structure analysis b a modern electron microscope-TEM observation of materials- | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Electron Microscopy | 55 | 2000 | 265-268 | |
| Author | Title of Article | |||
| H. Ichinose | The HVEM -an approach to the technology of world highest resolution microscope- | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Material Science | 37 | 2000 | 105-110 | |
| Author | Title of Article | |||
| H. Ichinose | Una Iente di quattro piani | |||
| Journal | Volume | Year | Pages Concerned | |
| Newton | 4 | 2000 | 108-115 | |
| Author | Title of Article | |||
| Y. Ishida, H. Ichinose, T. Kizuka and K. Suenaga | High-resolution electron microscopy of interfaces in nanocrystalline materials | |||
| Journal | Volume | Year | Pages Concerned | |
| Oggi Nnewton | 6 | 2000 | 130-137 | |
| Author | Title of Article | |||
| S. Koh, T. Kondo, T. Ishiwada, H. Ichinose, I. Shoji and R. Ito | Characterization of sublattice-reversed GaAs by reflection high energy electron diffraction and transmission electron | |||
| Journal | Volume | Year | Pages Concerned | |
| Advanced Engineering Materials | 2 | 2000 | 416-418 | |
| Author | Title of Article | |||
| H. Ichinose, H. Sawada and E. Takuma | Atomic resolution TEM analysis of grain boundaries in covalent bonding materials | |||
| Journal | Volume | Year | Pages Concerned | |
| Physica E | E7 | 2000 | 876-880 | |
| Author | Title of Article | |||
| H. Ichinose and M. Saito | Change in atomic bonding due to hydrogeno-bonding into MgO/Pd interface | |||
| Journal | Volume | Year | Pages Concerned | |
| Proc. Advanced Materials 2000 | 1 | 2000 | 39-40 | |
| Author | Title of Article | |||
| H. Ichinose | Crystal interface and high-resolution electron microscopy-the best partner | |||
| Journal | Volume | Year | Pages Concerned | |
| Proc. Electronics Goes Green 2000+ | 2000 | 335-338 | ||
| Author | Title of Article | |||
| B. S. Xu, L. Lu, X. G. Zhao, H. S. Jia, W. Liang, S. I. Tanaka and H. Ichinose | Migration and bonding of Pt nanoparticles by electron beam irradiation | |||
| Journal | Volume | Year | Pages Concerned | |
| Science & Technology of Advanced Materials | 1 | 2000 | 11-20 | |
| Author | Title of Article | |||
| T. Suga and N. Hosoda | Active disassembly and reversible interconnection | |||
| Journal | Volume | Year | Pages Concerned | |
| 2000 IEEE | 2000 | 330-334 | ||
| Author | Title of Article | |||
| Y. J. Park, M. Enoki, T. Suga and T. Kishi | Tensile Properties and Analysis of Growth of Interfacial Defects by Finite Element Method in Al/Sapphire Joint Fabricated by SAB Process | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Japan Inst. Metals | 64-8 | 2000 | 684-690 | |
| Author | Title of Article | |||
| Y. J. PARK, M. ENOKI, T. SUGA and T. KISHI | Effect of Heat Treatment and Residual Stress due to Contact Deformation on Fracture Behavior of Al/Sapphire Joint Fabricated by SAB | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Japan Inst. Metals | 64-8 | 2000 | 691-697 | |
| Author | Title of Article | |||
| T. Suga and K. Otsuka | A new era of system integration and packaging | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Japan Institute of Electoronics Packaging | 3-7 | 2000 | 621-626 | |
| Author | Title of Article | |||
| Y. J. PARK, M. EONOKI, T. SUGA and T. KISHI | Fracture Mechanical Approach to the Growth of Interfacial Defects iin Al/Sapphire Joint Fabricated by SAB: Tearing- Off Test and Analysis by Finite Element Method | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Japan Inst. Metals | 64-6 | 2000 | 444-450 | |
| Author | Title of Article | |||
| N. Hosoda, F. Kitaoka, T. Arafune and T. Suga | Reversible Interconnection Using Thin Films of Hydrogen Storage Alloys | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Japan Institute of Electoronics Packaging | 4-2 | 2001 | 142-144 | |
| Author | Title of Book | ||
| H. Ichinose and M. Nakanose | Crystal Analysis Hand Book | ||
| Publisher | Year | Pages | |
| Kyoritsu Shuppan Co. | 1999 | 10 | |