Summary of Research Project Results Under the JSPS FY2000
"Research for the future Program"



1.Research Institution The University of Tokyo
 
2.Research Area Physical and Engineering Sciences
 
3.Research Field Next-generation Process Technologies
 
4.Term of Project FY1996-FY2000
 
5.Project Number 96P00404
 
6.Title of Project Reversible interconnection of Dissimilar Materials

7.Projetct Leader
Name Institution,Department Title of Position
Tadatomo Suga The University of Tokyo, RCAST Professor

8.Core Members

Names Institution,Department Title of Position
Teruo Kishi The University of Tokyo, RCAST Professor
Hideki Ichinose The University of Tokyo, Graduate School of Engineering Associate Professor
Naoe Hosoda The University of Tokyo, Graduate School of Engineering Associate Professor

9.Cooperating Researchers

Names Institution,Department Title of Position
Ulrich Egger The University of Tokyo, RCAST Research Associate
Taek Ryong Chung The University of Tokyo, RCAST Research Associate
Park Young Jo The University of Tokyo, RCAST Research Associate

10.Summary of Research Results

We proposed a new technology of a reversible interconnection for environmentally conscious engineering. The reversible interconnection is a new bonding technology which is able to realize a direct bonding of dissimilar materials, such as metals, ceramics and semiconductors, and to separate the joint at the joined interface. We proposed and performed here several methods of the reversible interconnection.
One of the methods is technology to bond materials at low temperature, and separate them at the boundary face using hydrogen. Separation is done by inserting a hydrogen storage alloy that expands by absorbing hydrogen and micronizes, at the insertion layer in advance. The other method is technology to bond dissimilar materials directly at room temperature using the surface activated bonding method, and separate them by precipitation of a brittle intermediate layer at the bonded interface by heating.
The mechanisms of weakening the interface strength and fracture of the interface were also clarified to systematize a new method for an interface design of dissimilar materials for the reversible interconnection.

11.Key Words

(1)Reversible Interconnection、(2)Surface Activated Bonding、(3)Separation
(4)Interface、(5)Interface Design、(6)fracture
(7)hydrogen、(8)Transmission electron microscope、(9)environment

12.References

[Reference Articles]
Author Title of Article
N. Hosoda, L. Yang, Y. Kyogoku and T. Suga A bonding method which is designed for separating at interface:Reversible Interconnection
Journal Volume Year Pages Concerned
J. Jpn. Inst. for Interconnecting and Packaging Electronic Circuits 11-7 1996 510-513

Author Title of Article
T. Takagi, K. Kikuchi, R. Maeda, T. R. Chung and T. Suga Surface activated bonding of silicon wafers at room temperature
Journal Volume Year Pages Concerned
Appl. Phys. Lett. 68-16 1996 2222-2224

Author Title of Article
Y. Zhang, H. Ichinose, M. Nakanose, K. Ito and Y. Ishida Transmission electron microscopic observation of grain boundaries in CVD diamond thin films
Journal Volume Year Pages Concerned
JOEL News 32E 1996 16-19

Author Title of Article
Y. Zhang, H. Ichinose, K. Ito, Y. Ishida and M. Nakanose Grain boundary structure and growth sequence of diamond thin film
Journal Volume Year Pages Concerned
J. Electron Microscopy 45 1996 436-441

Author Title of Article
Y. Zhang, H. Ichinose, Y. Ishida, K. Ito and M. Nakanose Atomic and electonics structures of grain boundary in chemical vapor deposited diamond thin films
Journal Volume Year Pages Concerned
Material Science Forum 204 1996 207-214

Author Title of Article
Y. Zhang, H. Ichinose, K. Ito and M. Nakanose HRTEM and EELS analysis of asymmetrical Σ3 CSL boundaries in CVD diamond films
Journal Volume Year Pages Concerned
Mat. Res. Soc. Symp. Proc 416 1996 355-360

Author Title of Article
K. Kato, T. Ichimori, H. Ichinose, K. Ito and Y. Ishida HRTEM study of segregation at grain boundary in Al
Journal Volume Year Pages Concerned
Proc. JIMIS-8 1 1996 213-216

Author Title of Article
T. Ichimori, T. Kato, H. Ichinose, K. Ito and Y. Ishida HRTEM analysis of Pz/ZnO metal/ceramic interface
Journal Volume Year Pages Concerned
Proc. JIMIS-8 1 1996 253-256

Author Title of Article
H. Ichinose, Y. Zhang, K. Ito, Y. Ishida and M. Nakanose Grain boundary structure and growth sequence of diamond thin film
Journal Volume Year Pages Concerned
Proc. JIMIS-8 1 1996 225-228

Author Title of Article
T. Kizuka, H. Ichinose and Y. Ishida Structure and hardness of nanocrystalline silver
Journal Volume Year Pages Concerned
J. Japan Inst. Metals 61-4 1997 319-325

Author Title of Article
K. Kohyama, H. Ichinose, Y. Zhang, Y. Ishida and M. Nakanose Tight-binding calculation of the {211}Σ=3 boundary in diamond
Journal Volume Year Pages Concerned
J. Materials Sci 32 1997 1051-1057

Author Title of Article
H. Ishinose, Y. Zhang, Y. Ishida, K. Ito and M. Nakanose Application of spatially resolved EELS on atomic structure determination of diamond grain
Journal Volume Year Pages Concerned
Proc. 13th Int. Symp. On Plasma Chemistry 3 1997 1094-1099

Author Title of Article
L. Yang, N. Hosoda and T. Suga Investigation on the interface microstructure of stainless steel/aluminum joints created by the surface activated bonding method
Journal Volume Year Pages Concerned
Interface Science 5 1997 279-286

Author Title of Article
N. Hosoda, L. Yang and T. Suga Reversible interconnection-an approach to debonding joined material at the bonded interface, ASME EEP
Journal Volume Year Pages Concerned
Advances in Electronic Packaging 19-1 1997 307-312

Author Title of Article
T. R. Chung, N. Hosoda, H. Takagi and T. Suga 1. 3 μm InGaAs/InP lasers on GaAs substrate fabriccated by the surface activated wafer bonding method of room temperature
Journal Volume Year Pages Concerned
J. Applied Physics 72-13 1997 1565-1566

Author Title of Article
H. Takagi, R. Maeda and T. Suga Pressureless silicon direct bonding at room temperature by argon beam etching
Journal Volume Year Pages Concerned
Trans. IEEE of Japan 117-E-8 1997 420-425

Author Title of Article
T. R. Chung, L. Yang, N. Hosoda and T. Suga Room temperature GaAs-Si and InP-Si wafer direct bonding by the surface activated bonding method
Journal Volume Year Pages Concerned
Nuclear Instruments and Methods in Physics Research B121 1997 203-206

Author Title of Article
T. Akatsu, G. Sasaki, N. Hosoda and T. Suga Microstructure and strength of Al-sapphire interface by means of the surface activated bonding method
Journal Volume Year Pages Concerned
J. Mater. Res. 12-3 1997 852-856

Author Title of Article
T. Suga, Y. Ishii and N. Hosoda Microassembly system for integration of MEMS using the surface activated bonding method
Journal Volume Year Pages Concerned
IEICE Trans. Electron E80-C 1997 297-302

Author Title of Article
L. Yang, N. Hosoda and T. Suga TEM investigation of the stainless steel / aluminum interface created by the surface activated bonding method
Journal Volume Year Pages Concerned
Nuclear Instruments and Methods in Physics Research B121 1997 519-523

Author Title of Article
T. Suga, K. Saneshige and Jun Fujimoto A consideration on the quantitative disassembly evalution
Journal Volume Year Pages Concerned
J. Jpn. Inst. for Interconnecting and Packaging Electronic Circuits 12-1 1997 34-40

Author Title of Article
H. Ichinose and M. Nakanose Atomic and Electronic structure of diamond grain boundary
Journal Volume Year Pages Concerned
JIM 62 1998 15-21

Author Title of Article
S. Yoshiike, H. Adachi, H. Ichinose, K. Tokumitsu, H. Ino and K. Siratori Structure of melt-quenched Pr-Fe alloys and anaysis of the manetization based on super-ferromagnetism
Journal Volume Year Pages Concerned
Philosophical Magazine 77-6 1998 1461-1469

Author Title of Article
S. hoh, T. Kondo, T. Ishiwada, C. Iwamoto, H. Ichinose, H. Yaguchi, T. Usami, Y. Shiraki and R. Ito Sublattice reversal in GaAs/Si/GaAs(100) heterostructures by molecular beam epitaxy, materials transactions
Journal Volume Year Pages Concerned
JIM 39 1998 102-109

Author Title of Article
H. Ichinose and M. Nakanose Atomic and electronic structure of diamond grain boundaries analyzed by HRTEM and EELS
Journal Volume Year Pages Concerned
Jpn. J. Appl. Phys. 37 1998 L1493-1496

Author Title of Article
Y. Zhang, H. Ichinose, M. Nakanose, K. Ito and Y. Ishida Structure modelling of Σ3 and Σ9 coincident boundaries in CVD diamond thin films
Journal Volume Year Pages Concerned
Thin Solid Films 319 1998 87-91

Author Title of Article
H. Takagi, R. Maeda, N. Hosoda and T. Suga Si/Si interface bonded at room temperature by Ar beam surface activation
Journal Volume Year Pages Concerned
Intergranular and Interphase Boundaries in Materials   1998 341-344

Author Title of Article
H. Takagi, R. Maeda, T. R. Chung and T. Suga Low-temperature direct bonding of silicon and silicon dioxide by the surface activation method
Journal Volume Year Pages Concerned
Sensors and Actuators A70 1998 164-170

Author Title of Article
N. Hosoda, T. Akatsu, J. Chu and T. Suga The effect of the surface roughness on room temperature bonding of metals to ceramics
Journal Volume Year Pages Concerned
Advances in Science and Technology 15 1998 1091-1096

Author Title of Article
H. Takagi, R. Maeda, N. Hosoda and T. Suga Effect of surface roughness on room-temperature wafer bonding by Ar beam surface activation
Journal Volume Year Pages Concerned
Jpn. J. Appl. Phys. 37 1998 4197-4203

Author Title of Article
T. Suga UHV room temperature joining by the surface activated bonding method
Journal Volume Year Pages Concerned
Advances in Science and Technology 15 1998 1079-1089

Author Title of Article
T. Suga Recent progress in surface activated bonding
Journal Volume Year Pages Concerned
Ceramic Microstructure   1998 385-389

Author Title of Article
T. R. Chung, N. Hosoda and T. Suga and H. Takagi InGaAsP lasers on GaAs fabricated by the surface activated wafer direct bonding method at room temperature
Journal Volume Year Pages Concerned
Jpn. J. Appl. Phys. 37 1998 1405-1407

Author Title of Article
N. Hosoda, Y. Kyogoku and T. Suga Effect of the surface treatment on the room-temperature bonding of Al to Si and SiO2
Journal Volume Year Pages Concerned
J. Material Science 33-1 1998 253-258

Author Title of Article
S. Ichikawa, H. Ichinose and K. Ito Structure and deformation mechanism of Ag/Fe nano crystalline alloy
Journal Volume Year Pages Concerned
Materia 37 1999 1007

Author Title of Article
H. Ichinose Crystal interface
Journal Volume Year Pages Concerned
Powder Metallurgy 47 1999 412-416

Author Title of Article
Y. Yamada-Takamura, O. Tsuda, H. Ichinose and T. Yoshida Atomic-scale structure at the nucleation site of cubic boron nitride deposited from the vopor
Journal Volume Year Pages Concerned
J. Electron Microscopy 48 1999 245-251

Author Title of Article
S. Kon, T. Kno, M. Ebara, T. Ishiwada, H. Sawada, H. Ichinose, I. Shoji and R. Ito GaAs/Ge/GaAs sublattice reversal epitaxy on GaAs(100) and (111) substrates for nonlinear optical devices
Journal Volume Year Pages Concerned
Physical Review 59 1999 10351-10355

Author Title of Article
S. Ichikawa, K. Miyazawa, H. Ichinose and K. Ito The microstructure of deformed nanocrystalline Ag and Ag/Fe alloy
Journal Volume Year Pages Concerned
J. J. Appl. Phys. 38 1999 L508-511

Author Title of Article
H. Ichinose, H. Sawada, E. Takuma and M. Osaki Atomic resolution HVEM and environmental noise,
Journal Volume Year Pages Concerned
Nano Structure Materials 11 1999 1301-1311

Author Title of Article
C. Iwamoto, H. Ichinose and S. Tanaka Atomic observation at the reactive wetting front on SiC
Journal Volume Year Pages Concerned
J. Electron Microscopy 48 1999 887-891

Author Title of Article
B. S. Xu, H. Ichinose and S. Tanaka Twistangle dependence of Josephson Junction effect measured in the [001] twist boundary of Bi2Sr2CaCu20x super conductor
Journal Volume Year Pages Concerned
Phil. Mag. 79 1999 85-95

Author Title of Article
W. Wang, H. Matsuhata, T. Takahashi, Y. Ishida, H. Okumura, S. Yoshida, H. Sawada and H. Ichinose Characterization of surface step on heteroepitaxial 3C-SiC thin films by TEM
Journal Volume Year Pages Concerned
Material Science Forum 294-6 1999 263-268

Author Title of Article
H. Sawada, H. Ichinose, D. Takeuchi and H. Okushi A cross-sectional HRTEM study of particle defects in an epitaxial diamond film
Journal Volume Year Pages Concerned
Proc. Microsc. Semcond. Mater. Conf. 1 1999 331-334

Author Title of Article
H. Satsuki, T. Hayashi, M. Akaishi, K. Miyazawa, H. Ichinose and K. Ito Microstructure of C60/Nanotube composites produced under high pressure
Journal Volume Year Pages Concerned
Proc. Inst. Phys. Conf. 164 1999 235-238

Author Title of Article
T. Kuzumaki, O. Ujiie, H. Ichinose and K. Ito Mechanical characteristics and preparation of carbon nanotube fiber-reinforced Ti composite
Journal Volume Year Pages Concerned
Proc. JIMIC-3799 1 1999 1243-1246

Author Title of Article
H. Takagi, R. Maeda, N. Hosoda and T. Suga Room-temperature bonding of Si wafers to Pt films on SiO2 or LiNb03 substrates using Ar-beam surface activation
Journal Volume Year Pages Concerned
Jpn. J. Appl. Phys. 38 1999 1559-1561

Author Title of Article
T. Akatsu, N. Hosoda, T. Suga and M. Ruhle Atomic structure of Al/Al interface formed by surface activated bonding
Journal Volume Year Pages Concerned
J. Materials Science 34 1999 4133-4139

Author Title of Article
H. Takagi, R. Maeda, N. Hosoda and T. Suga Room-temperature bonding of lithium niobate and silicon wafers by argon-beam surface activation
Journal Volume Year Pages Concerned
Appl. Phys. Lett. 74-16 1999 2387-2389

Author Title of Article
Y. J. Park, M. Enoki. T. Suga and T. Kishi Tensile properties and analysis of growth of interfacial defects by finite element method in Al/Sapphire joint fabricated by SAB process
Journal Volume Year Pages Concerned
JIM 63-12 1999 1485-1489

Author Title of Article
H. Takagi, R. Maeda, N. Hosoda and T. Suga Transmission electron microscope observation of Si/Si interface bonded at room temperature by Ar beam surface activation
Journal Volume Year Pages Concerned
Jpn. J. Appl. Phys. 3-A 1999 1589-1594

Author Title of Article
H. Ichinose Material structure analysis b a modern electron microscope-TEM observation of materials-
Journal Volume Year Pages Concerned
J. Electron Microscopy 55 2000 265-268

Author Title of Article
H. Ichinose The HVEM -an approach to the technology of world highest resolution microscope-
Journal Volume Year Pages Concerned
J. Material Science 37 2000 105-110

Author Title of Article
H. Ichinose Una Iente di quattro piani
Journal Volume Year Pages Concerned
Newton 4 2000 108-115

Author Title of Article
Y. Ishida, H. Ichinose, T. Kizuka and K. Suenaga High-resolution electron microscopy of interfaces in nanocrystalline materials
Journal Volume Year Pages Concerned
Oggi Nnewton 6 2000 130-137

Author Title of Article
S. Koh, T. Kondo, T. Ishiwada, H. Ichinose, I. Shoji and R. Ito Characterization of sublattice-reversed GaAs by reflection high energy electron diffraction and transmission electron
Journal Volume Year Pages Concerned
Advanced Engineering Materials 2 2000 416-418

Author Title of Article
H. Ichinose, H. Sawada and E. Takuma Atomic resolution TEM analysis of grain boundaries in covalent bonding materials
Journal Volume Year Pages Concerned
Physica E E7 2000 876-880

Author Title of Article
H. Ichinose and M. Saito Change in atomic bonding due to hydrogeno-bonding into MgO/Pd interface
Journal Volume Year Pages Concerned
Proc. Advanced Materials 2000 1 2000 39-40

Author Title of Article
H. Ichinose Crystal interface and high-resolution electron microscopy-the best partner
Journal Volume Year Pages Concerned
Proc. Electronics Goes Green 2000+   2000 335-338

Author Title of Article
B. S. Xu, L. Lu, X. G. Zhao, H. S. Jia, W. Liang, S. I. Tanaka and H. Ichinose Migration and bonding of Pt nanoparticles by electron beam irradiation
Journal Volume Year Pages Concerned
Science & Technology of Advanced Materials 1 2000 11-20

Author Title of Article
T. Suga and N. Hosoda Active disassembly and reversible interconnection
Journal Volume Year Pages Concerned
2000 IEEE   2000 330-334

Author Title of Article
Y. J. Park, M. Enoki, T. Suga and T. Kishi Tensile Properties and Analysis of Growth of Interfacial Defects by Finite Element Method in Al/Sapphire Joint Fabricated by SAB Process
Journal Volume Year Pages Concerned
J. Japan Inst. Metals 64-8 2000 684-690

Author Title of Article
Y. J. PARK, M. ENOKI, T. SUGA and T. KISHI Effect of Heat Treatment and Residual Stress due to Contact Deformation on Fracture Behavior of Al/Sapphire Joint Fabricated by SAB
Journal Volume Year Pages Concerned
J. Japan Inst. Metals 64-8 2000 691-697

Author Title of Article
T. Suga and K. Otsuka A new era of system integration and packaging
Journal Volume Year Pages Concerned
J. Japan Institute of Electoronics Packaging 3-7 2000 621-626

Author Title of Article
Y. J. PARK, M. EONOKI, T. SUGA and T. KISHI Fracture Mechanical Approach to the Growth of Interfacial Defects iin Al/Sapphire Joint Fabricated by SAB: Tearing- Off Test and Analysis by Finite Element Method
Journal Volume Year Pages Concerned
J. Japan Inst. Metals 64-6 2000 444-450

Author Title of Article
N. Hosoda, F. Kitaoka, T. Arafune and T. Suga Reversible Interconnection Using Thin Films of Hydrogen Storage Alloys
Journal Volume Year Pages Concerned
J. Japan Institute of Electoronics Packaging 4-2 2001 142-144

[Reference Books]
Author Title of Book
H. Ichinose and M. Nakanose Crystal Analysis Hand Book
Publisher Year Pages
Kyoritsu Shuppan Co. 1999 10


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