Summary of Research Project Results Under the JSPS FY2000
"Research for the future Program"



1.Research Institution@Waseda University
@
2.Research Area@Physical and Engineering Science
@
3.Research Field@Next-generation Process Technologies
@
4.Term of Project@FY1996`FY2000
@
5.Project Number@96P00403
@
6.Title of Project@Wafer-Scale Fabrication Processes of Nano Dots

7.Projetct Leader
Name Institution,Department Title of Position
Osaka, Toshiaki Waseda University, Kagami Memorial Laboratory for Material Science and Technology Professor

8.Core Members

Names Institution,Department Title of Position
Ohdomari, Iwao Waseda University, Kagami Memorial Laboratory for Material Science and Technology Professor
Osaka, Tetsuya Waseda University, Kagami Memorial Laboratory for Material Science and Technology Professor
Oshima, Chuhei Waseda University, Kagami Memorial Laboratory for Material Science and Technology Professor

9.Cooperating Researchers

10.Summary of Research Results

This project started in September 1996 with the aim of fabricating nanometer scale structures (nano-structure for short) on whole surfaces of silicon wafers within a reasonable time for practical use. We intended to establish an industrial technology for the mass production of the nano-structured materials as a process technology of the next generation.
As a method for manufacturing the nano-structures, the scanning probe microscope (SPM) has widely been used. This method, however, is too time-consuming for industrial use. This is the motivation of our research on the wafer-scale process for nano-structure fabrication.
After the research over a period of 4 and half years up to March 2001, we have got the following results. The aim mentioned above has almost been achieved by our new technique; the nanometer scale surface modification of material with "focused ion or electron beam irradiation" combined with wafer scale processing based on "electro-chemical technique". Concerning the former technique, the large arrays of nano etch pits 8 nm long on each side with a pitch of 20 nm were made on a silicon wafer. This density corresponds to 1.5Tbits/in2 and is the world record. For the latter technique, through the control of surface topography and property, we achieved new functions such as suppression of fluctuation in semiconductor device characteristics and molecular recognition. For example, the nano-structure array can be applied not only to the recording media of data, but also to managing inter-molecular interactions by controlling the surface morphology, surface potential, and hydrophilicity/hidrophobicity. We believe that the nano-material technology established by us could be applied to the wide fields of science and technology, such as information processing, bio-molecular recognition, long-life rechargeable batteries by suppressing the dendric growth of anode materials, surface control of artificial catalyst, and nano-tribology.

11.Key Words

(1)nano-structureA(2)wafer-scale processA(3)surface modification
(4)beam irradiationA(5)nano etch pitsA(6)molecular recognition
(7)recording mediaA(8)inter-molecular interactionsA(9)hydrophilicity/hydropobicity

12.References

[Reference Articles]
Author Title of Article
K. Kumamoto, T. Hoshino, K. Kokubun, T. Ishimaru and I. Ohdomari Dynamic Growth Steps of n~n Dimer-adatom-stacking-fault Domains on the Quenced Si(111) Surface
Journal Volume Year Pages Concerned
Phys. Rev. B 53 1996 12907-12911

Author Title of Article
T. Hoshino, M. Hata, S. Oikawa, M. Tsuda and I. Ohdomari Origin of Buckling-dimer-row Formation of Si(001) Surfaces
Journal Volume Year Pages Concerned
Phys. Rev. B 54 1996 11331-11339

Author Title of Article
M. Koh, K. Horita, B. Shigeta, K. Igarashi, T. Matsukawa, T. Tanii, S. Mori and I. Ohdomari Quantitative Analysis of Radiation Induced Si/SiO2 Interface Defects by Means of He Single Ion Irradiation
Journal Volume Year Pages Concerned
Appl. Phys. Lett. 68 1996 1552-1554

Author Title of Article
T. Tanii, T. Matsukawa, S. Mori, M. Koh, B. Shigeta, K. Igarashi and I. Ohdomari Nonscalability of Alpha-particle-induced Charge Collection Area
Journal Volume Year Pages Concerned
Jpn. J. Appl. Phys. 35 1996 L688-L690

Author Title of Article
M. Koyama, Y. Akita, C. Cheong, M. Koh, T. Matsukawa, K. Horita, B. Shigeta and I. Ohdomari Quantitative Analysis of Degradation in Schottky Diode Characteristics Induced by Single Ion Implantation
Journal Volume Year Pages Concerned
Appl. Surf. Sci. 104/105 1996 253-256

Author Title of Article
M. Koh, K. Horita, B. Shigeta, T. Matsukawa, A. Kishida, T. Tanii, S. Mori and I. Ohdomari Radiation Immunity of pMOSFETs and nMOSFETs Examined by Means of MeV He Single Ion Microprobe
Journal Volume Year Pages Concerned
Appl. Surf. Sci. 104/105 1996 364-368

Author Title of Article
T. Hoshino, T. Ishimaru, K. Kumamoto, H. Kawada and I. Ohdomari Dynamic Features in Generation and Disappearance of Si(111)-7~7 Domains
Journal Volume Year Pages Concerned
Appl. Surf. Sci. 107 1996 53-57

Author Title of Article
T. Matsukawa, S. Suzuki, T. Fukai, T. Tanaka and I. Ohdomari STM Observation of "Craters" on Graphite Surface Induced by Single Ion Implantation
Journal Volume Year Pages Concerned
Appl. Surf. Sci. 107 1996 227-232

Author Title of Article
T. Matsukawa, S. Mori, T. Tanii, T. Arimura, M. Koh, K. Igarashi, T. Sugimoto and I. Ohdomari Evaluation of Soft-error Hardness of DRAMs under Quasi-heavy Ion Irradiation using He Single Ion Microprobe Technique
Journal Volume Year Pages Concerned
IEEE Trans. Nucl. Sci. 43 1996 2952-2959

Author Title of Article
M. Koh, K. Igarashi, T. Sugimoto, T. Matsukawa, S. Mori, T. Arimura and I. Ohdomari Quantitative Estimation of Generation Rates of Si/SiO2 Interface Defects by MeV He Single Ion Irradiation
Journal Volume Year Pages Concerned
EEE Trans. Nucl. Sci. 43 1996 2952-2959

Author Title of Article
M. Koyama, C. Cheong, K. Yokoyama and I. Ohdomari Estimation of Spatial Extent of a Defect Cluster in Si Induced by Single Ion Irradiation
Journal Volume Year Pages Concerned
Jpn. J. Appl. Phys. 36 1997 L708-L710

Author Title of Article
M. Koyama, C. Cheong, K. Yokoyama and I. Ohdomari Influence of Near-surface Defects in Si Induced by Reactive Ion Etching on the Electrical Properties of the Pt/n-Si Interface
Journal Volume Year Pages Concerned
Jpn. J. Appl. Phys. 36 1997 6682-6686

Author Title of Article
T. Watanabe, T. Hoshino and I. Ohdomari Monte Carlo Study on Formation of Periodic Structures on Si(111) Surfaces
Journal Volume Year Pages Concerned
Surf. Sci. 389 1997 375-381

Author Title of Article
T. Hoshino, N. Kamijou, H. Fujiwara, T. Wantanbe and I. Ohdomari Theoretical Investigation on the Formation Process of the Stacking-fault Triangle in the Si(111)-7~7 Structure
Journal Volume Year Pages Concerned
Surf. Sci. 394 1997 119-128

Author Title of Article
T. Watanabe, T. Hoshino and I. Ohdomari Mechanism of H2 Desorption from H-terminated Si(001) Surfaces
Journal Volume Year Pages Concerned
Appl. Surf. Sci. 117/118 1997 67-71

Author Title of Article
M. Koh, K. Igarashi, T. Sugimoto, T. Matsukawa, S. Mori, T. Arimura and I. Ohdomari Quantitative Characterization of Si/SiO2 Interface Traps Induced by Energetic Ions by Means of Single Ion Microprobe and Single Ion Beam Induced Charge Imaging
Journal Volume Year Pages Concerned
Appl. Surf. Sci. 117/118 1997 171-175

Author Title of Article
T. Matsukawa, Y. Fukai, S. Suzuki, K. Hara, M. Koh and I. Ohdomari Development of Single Ion Implantation - Controllability of Implanted Ion Number
Journal Volume Year Pages Concerned
Appl. Surf. Sci. 117/118 1997 677-683

Author Title of Article
T. Shinada, H. Kimura, Y. Kumura and I. Ohdomari Damage and Contamination Free Fabrication of Thin Si Wires with Highly Controlled Feature Size
Journal Volume Year Pages Concerned
Appl. Surf. Sci. 117/118 1997 684-689

Author Title of Article
I. Ohdomari, T. Watanabe, K. Kumamoto and T. Hoshino Consideration of Atom Movement during Si Surface Reconstruction
Journal Volume Year Pages Concerned
Phase Transitions 62 1997 245-258

Author Title of Article
T. Matsukawa, S. Mori, T. Tanii, T. Arimura, M. Koh, K. Igarashi, T. Sugimoto and I. Ohdomari Three-dimensinal Site Dependence of Single-ion-induced Charge Collection at a p-n Junction - Role of Funneling and Diffusion Processes under Different Ion Energy
Journal Volume Year Pages Concerned
J. Appl. Phys. 83 1998 3413-3418

Author Title of Article
T. Matsukawa, T. Shinada, T. Fukai and I. Ohdomari Key Technologies of Fib System for Single Ion Implantation
Journal Volume Year Pages Concerned
J. Vac. Sci. Technol. B 16 1998 2479-2483

Author Title of Article
T. Shinada, Y. Kumura, J. Okabe, T. Matsukawa and I. Ohdomari The Current Status of Single Ion Implantation
Journal Volume Year Pages Concerned
J. Vac. Sci. Technol. B 16 1998 2489-2493

Author Title of Article
T. Watanabe, T. Handa, T. Hoshino and I. Ohdomari Effects of Fixed Particles on Periodic Adatom Arrangements on Si(111) Unreconstructed Surfaces
Journal Volume Year Pages Concerned
Appl. Surf. Sci. 130/132 1998 6-12

Author Title of Article
T. Ishimaru, K. Shimada, T. Hoshino, H. Kawada and I. Ohdomari Stepwise Change in Gibbs Free Energy Curve Observed in Si(111) DAS Domain Growth
Journal Volume Year Pages Concerned
Appl. Surf. Sci. 130/132 1998 18-22

Author Title of Article
K. Shimada, T. Ishimaru, S. Katsube, H. Kawada and I. Ohdomari Reactivity of O2 with Si(111) Surfaces with Different Surface Structures
Journal Volume Year Pages Concerned
Appl. Surf. Sci. 130/132 1998 170-175

Author Title of Article
T. Ishimaru, T. Hoshino, H. Kawada, K. Shimada, T. Watanabe and I. Ohdomari Influence of Oxygen on the Formation of Si(111)-7~7 Domains Studied by Scanning Tunneling Microscopy
Journal Volume Year Pages Concerned
Phys. Rev. B 58 58 1998 9863-9866

Author Title of Article
K. Hara and I. Ohdomari Morphology Control of Cu Clusters Formed on H-Si(111) Surface in Solution by Si Potential
Journal Volume Year Pages Concerned
Jpn. J. Appl. Phys. 37 1998 L1333-L1335

Author Title of Article
T. Ishimaru, K. Shimada, T. Hoshino, T. Yamawaki and I. Ohdomari Size Changes of n~n Stacking-fault Half Units of Dimer-adatom-stacking-fault Structures on Quenched Si(111) Surfaces
Journal Volume Year Pages Concerned
Phys. Rev. B 60 1999 13592-13597

Author Title of Article
T. Matsukawa, K. Yokoyama, S. Sawara and I. Ohdomari Lateral Migration of Point Defects in Si Induced by Localized Ion Implantation
Journal Volume Year Pages Concerned
Appl. Phys. Lett. 74 1999 2663-2665

Author Title of Article
M. Koh, K. Igarashi, T. Matsukawa, S. Sawara and I. Ohdomari Quantitative Characterization of Ion-induced SiO2/Si Interface Traps by Means of Mev He Single-ion Irradiation
Journal Volume Year Pages Concerned
J. Appl. Phys. 85 1999 7814-7818

Author Title of Article
T. Watanabe, H. Fujiwara, H. Noguchi, T. Hoshino and I. Ohdomari Novel Interatomic Potential Energy Function for Si, O Mixed Systems
Journal Volume Year Pages Concerned
Jpn. J. Appl. Phys. 38 1999 L366-L369

Author Title of Article
K. Shimada, S. Katsube, T. Ishimaru, H. Kawada and I. Ohdomari Consideration on the Quantitativeness of Reflection High Energy Electron Diffraction Intensity as a Tool to Monitor the Coverage of the Si(111) Surface by 7~7 Domains
Journal Volume Year Pages Concerned
Jpn. J. Appl. Phys. 38 1999 877-880

Author Title of Article
T. Hoshino, T. Ishimaru, H. Kawada and I. Ohdomari Dominant Role of Corner Holes in the Decomposition Process of Silicon Islands on Si(111) Surfaces
Journal Volume Year Pages Concerned
Jpn. J. Appl. Phys. 38 1999 1858-1862

Author Title of Article
T. Shinada, A. Ishikawa, M. Fujita, K. Yamashita and I. Ohdomari Influence of Secondary Electron Detection Efficiency on Controllability of Dopant Ion Number in Single Ion Implantation
Journal Volume Year Pages Concerned
Jpn. J. Appl. Phys. 38 1999 3419-3421

Author Title of Article
K. Hara, T. Tanii and I. Ohdomari Nucleation and Growth of Cu Adsorbates on Hydrogen-terminated Si(111) Surface in Solution
Journal Volume Year Pages Concerned
Jpn. J. Appl. Phys. 38 1999 6860-6863

Author Title of Article
T. Ishimaru, K. Shimada, T. Hoshino and I. Ohdomari Rearragement of Dimers in a Dimer-adatom-stacking-fault Structure on an Si(111) Surface
Journal Volume Year Pages Concerned
Surf. Sci. 433/435 1999 401-404

Author Title of Article
K. Shimada, S. Katsube, T. Ishimaru, H. Kawada and I. Ohdomari Effect of Environmental O2 on Dynamical Process of the Si(111) "1~1"7~7 Structural Phase Transition
Journal Volume Year Pages Concerned
Surf. Sci. 433/435 1999 460-464

Author Title of Article
K. Hara and I. Ohdomari Control of Metal Nano-structure Morphology by Means of Applied Si Potential
Journal Volume Year Pages Concerned
Appl. Surf. Sci. 144-145 1999 476-479

Author Title of Article
T. Watanabe And I. Ohdomari Modeling of SiO2/Si(100) Interface Structure by using Extended Stillinger-Weber Potential
Journal Volume Year Pages Concerned
Thin Solid Films 343/344 1999 370-373

Author Title of Article
H. Kubota, T. Sumita, S. Takami, T. Shinada and I. Ohdomari Nano-fabrication of CDW and Its Negative Resistance Phenomenon
Journal Volume Year Pages Concerned
J. Phys. France 9 1999 175-177

Author Title of Article
K. Hara, M. Koh, T. Matsukawa, T. Tanii and I. Ohdomari Single-ion Detection using Nuclear Track Detector Cr-39 Plastic
Journal Volume Year Pages Concerned
Rev. Sci. Instrum. 70 1999 4536-4538

Author Title of Article
T. Sumita, T. Nagai, H. Kubota, T. Matsukawa and I. Ohdomari Nano-fabricated Cdw by Ion-beam Irradiation
Journal Volume Year Pages Concerned
Synthetic Metals 103 1999 2234-2237

Author Title of Article
M. Koh, T. Shinada, S. Sawara, T. Goto, Y. Ando and I. Ohdomari Simple Fabrication of Nanopyramid Array (NPA) on Si Surface by Means Focused Ion Beam Patterning Wet Etching
Journal Volume Year Pages Concerned
Ext. Abst. SSDM - Tokyo @ 1999 184-185

Author Title of Article
K. Shimada, T. Ishimaru, T. Watanabe, T. Yamawaki, M. Osuka, T. Hoshino and I. Ohdomari Kinetics of Dimer-adatom-stacking-fault Reconstruction on Laser Quenched Si(111) Surfaces
Journal Volume Year Pages Concerned
Phys. Rev. B 61 2000 2546-2551

Author Title of Article
T. Ishimaru, T. Hoshino, K. Shimada, T. Yamawaki and I. Ohdomari Formation and Annihilation of Various Stacking-fault Half Units in Dimer-adatom-stacking-fault Structures on Quenched Si(111) Surfaces
Journal Volume Year Pages Concerned
Phys. Rev. B 62 2000 15577-15580

Author Title of Article
T. Shinada, A. Ishikawa, C. Hinoshita, M. Koh and I. Ohdomari Reduction of Fluctuation in Semiconductor Conductivity by One-by-one Ion Implantation of Dopant Atoms
Journal Volume Year Pages Concerned
Jpn. J. Appl. Phys 39 2000 L265-L268

Author Title of Article
M. Koh, S. Sawara, T. Goto, Y. Ando, T. Shinada and I. Ohdomari New Process for Si Nanopyramid Array (NPA) Fabrication by Means of Ion Beam Irradiation and Wet Etching
Journal Volume Year Pages Concerned
Jpn. J. Appl. Phys. 39 2000 2186-2188

Author Title of Article
M. Koh, S. Sawara, T. Goto, Y. Ando, T. Shinada, I. Ohdomari High-density Nanoetchipit-array Fabrication on Si Surface using Ultrathin SiO2 Mask
Journal Volume Year Pages Concerned
Jpn. J. Appl. Phys. 39 2000 5352-5355

Author Title of Article
T. Watanabe and I. Ohdomari Modeling of SiO2/Si(001) Structure Including Step and Terrace Configurations
Journal Volume Year Pages Concerned
Appl. Surf. Sci. 162/163 2000 116-121

Author Title of Article
S. Sawara, M. Koh, T. Goto, Y. Ando, T. Shinada And I. Ohdomari Simple Fabrication of High Density Concave Nanopyramid Array (NPA) on Si Surface
Journal Volume Year Pages Concerned
Appl. Surf. Sci. 159/160 2000 481-485

Author Title of Article
T. Shinada, A. Ishikawa, C. Hinoshita, M. Koh and I. Ohdomari Flat-band Voltage Control of a Back-gate Mosfet by Single Ion Implantation
Journal Volume Year Pages Concerned
Appl. Surf. Sci. 162/163 2000 499-503

Author Title of Article
M. Koh, S. Sawara, T. Shinada, T. Goto, A. Ishikawa and I. Ohdomari Simple Nanostructuring of Si Surfaces by Means of Focused Beam Patterning and Wet Etching
Journal Volume Year Pages Concerned
Appl. Surf. Sci. 162/163 2000 599-603

Author Title of Article
T. Tanii, K. Hara, K. Ishibashi, K. Ohta and I. Ohdomari Nucleation and Growth of Cu Clusters on Highly Oriented Pyrolytic Graphite Observed with an In Situ Electrochemical Scanning Tunneling Microscope
Journal Volume Year Pages Concerned
Appl. Surf. Sci. 162/163 2000 662-665

Author Title of Article
T. Matsukawa and I. Ohdomari Single Ion Irradiation and Its Application
Journal Volume Year Pages Concerned
Ho-sha-sen(in Japanese) 23 1997 25-34

Author Title of Article
K. Hara and I. Ohdomari Wafer Scale Nanotechnology Based on Single Ion Implantation and Electrochemical Processes
Journal Volume Year Pages Concerned
Tech. Rep., IEICE(in Japanese) 7 1997 35-40

Author Title of Article
K. Hara and I. Ohdomari Wafer Scale Nanotechnology Based on Single Ion Implantation and Electrochemical Processes
Journal Volume Year Pages Concerned
J. IEICE(in Japanese) J81-C-2 1998 675-679

Author Title of Article
I. Ohdomari, K. Shimada, and T. Ishimaru The New Experimental Facts on Si(111)-n~n Structure and Its Meaning
Journal Volume Year Pages Concerned
Shinku(in Japanese) 42 1999 603-607

Author Title of Article
Tetsuya Osaka, Nao Takano and Shinichi Komaba Fabrication of Nickel Dots Using Selective Electroless Deposition on Silicon Wafer
Journal Volume Year Pages Concerned
Chem. Lett. 7 1998 657-658

Author Title of Article
Nao Takano, Naohiro Hosoda, Taro Yamada and Tetsuya Osaka Mechanism of the Chemical Deposition of Nickel on Silicon Wafer in Aqueous Solution
Journal Volume Year Pages Concerned
J. Electrochem. Soc. 146 1999 1407-1411

Author Title of Article
Nao Takano, Naohiro Hosoda, Taro Yamada and Tetsuya Osaka Effect of Oxidized Silicon Surface on Chemical Deposition of Nickel on n-type Silicon Wafer
Journal Volume Year Pages Concerned
Electrochim. Acta 44 1999 3743-3749

Author Title of Article
Nao Takano, Daisuke Niwa, Taro Yamada and Tetsuya Osaka Nickel Deposition Behavior on n-Type Silicon Wafer for Fabrication of Minute Nickel Dots
Journal Volume Year Pages Concerned
Electrochim. Acta 45 2000 3263-3268

Author Title of Article
Taro Yamada, Nao Takano, Keiko Yamada, Shuhei Yoshitomi, Tomoyuki Inoue and Tetsuya Osaka Application of Organic Monolayers Formed on Si(111): Possibilities for Nanometer-scale Patterning
Journal Volume Year Pages Concerned
Electrochem. Commn. 3 2001 67-72

Author Title of Article
Taro Yamada, Nao Takano, Keiko Yamada, Shuhei Yoshitomi, Tomoyuki Inoue and Tetsuya Osaka Evaluation of Organic Monolayers Forms on Si(111) and the Effects of Electron Bombardment Aiming for Nano-scale Engineering
Journal Volume Year Pages Concerned
Jpn. J. Appl. Phys. in press 2001 @

Author Title of Article
Jun Nakamura, Tomohiko Kagawa and Toshiaki Osaka Nucleation of Au on KC1(001)
Journal Volume Year Pages Concerned
Surf. Sci. 389 1997 109-115

Author Title of Article
Jun Nakamura, Hiroshi Nakajima and Toshiaki Osaka Structural Stability and Electronic Origin of the GaAs(111)A-2~2 Surface
Journal Volume Year Pages Concerned
Appl. Surf. Sci. 121/122 1997 249-252

Author Title of Article
Masayasu Nishizawa, Toyoaki Eguchi, Seiichi Omoto and Toshiaki Osaka STM Study of the InSb(111)A-(2~6)Surface
Journal Volume Year Pages Concerned
Appl. Surf. Sci. 121/122 1997 204-207

Author Title of Article
Toyoaki Eguchi, Jun Nakamura and Toshiaki Osaka Structure and Electronic States of the -Sn(111)-(2~2)Surface
Journal Volume Year Pages Concerned
J. Phys. Soc. Jpn. 67 1998 381-384

Author Title of Article
Tetsuya Mishima and Toshiaki Osaka Profile Imaging of the InSb{111}A, B-(2~2)Surfaces
Journal Volume Year Pages Concerned
Surf. Sci. 395 1998 L256-L260

Author Title of Article
Masayasu Nishizawa, Toyoaki Eguchi, Tetsuya Misima, Jun Nakamura and Toshiaki Osaka Structure of the InSb(111)A-(23~23)-R30 Surface and Dynamical Formation Processes
Journal Volume Year Pages Concerned
Phys. Rev. B 57 1998 6317-6320

Author Title of Article
Testuya Mishima, Jun Nakamura, Kenji Tsukada, Masayasu Nishizawa, Toyoaki Eguchi and Toshiaki Osaka Direct Imaging of the Evolving Au/InSb(111)B Interface
Journal Volume Year Pages Concerned
J. Vac. Sci. and Technol. B 16 1998 2324-2327

Author Title of Article
Jun Nakamura, Testuya Mishima, Moto-hisa Masui, Sung-Pyo Cho, Masayasu Nishizawa, Toyoaki Eguchi and Toshiaki Osaka Chemical Bonding Features for Faultily Stacked Interface of GaAs{111}
Journal Volume Year Pages Concerned
J. Vac. Sci. and Technol. B 16 1998 2426-2431

Author Title of Article
R. Minato, T. Eguchi, S. Furuta, Y. Miura, R. Kato, H. Morita, T. Funaki, H. Sato, T. Osaka Surface core-level shift as assessed by using the Voigt function
Journal Volume Year Pages Concerned
J. Surf. Sci. Soc. Jpn. 21 2000 426-433

Author Title of Article
N. Yamamoto, E. Rokuta, Y. Hasegawa, T. Nagao, M. Trenary and C. Oshima Oxygen Adsorption Sites on the PrB6(100)Surfaces
Journal Volume Year Pages Concerned
Surf. Sci. 348 1996 133-142

Author Title of Article
K. Nagaoka, H. Ogawa, N. Arai, S. Uchiyama, T. Yamashita, C. Oshima and S. Otani Energy Ditribution of Filed Emission Electrons from a Nb<111>Tip
Journal Volume Year Pages Concerned
Surf. Sci. 357/358 1996 218-221

Author Title of Article
A. Nagashima, N. Tejima, Y. Gamou, T. Kawai and C. Oshima lectronic States of Monolayer Hexagonal Boron Nitride Formed on the Metal Surfaces
Journal Volume Year Pages Concerned
Surf. Sci. 357/358 1996 307-311

Author Title of Article
H. Ogawa, N. Arai, K. Nagaoka, S. Uchiyama, T. Yamashita, H. Itou and C. Oshima Energy Spectra of Filed Emission Electrons from a W<310>Tip
Journal Volume Year Pages Concerned
Surf. Sci. 357/358 1996 371-375

Author Title of Article
N. Yamamoto, E. Rokuta, Y. Hasegawa, T. Nagao, M. Trenary and C. Oshima Oxygen Adsorption on the LaB6(100)and(111)Surfaces
Journal Volume Year Pages Concerned
Surf. Sci. 357/358 1996 708-711

Author Title of Article
E. Rokuta, N. Yamamoto, Y. Hasegawa, T. Nagao, M. Trenary and C. Oshima Phonon Dispersion of the LaB6(111)Surfaces
Journal Volume Year Pages Concerned
Surf. Sci. 357/358 1996 712-716

Author Title of Article
E. Rokuta, N. Yamamoto, Y. Hasegawa, T. Nagao, M. Trenary and C. Oshima Oxygen Chemisorbed LaB6(100), (110)and(111)Surfaces
Journal Volume Year Pages Concerned
J. Vac. Sci. Technol. A 14 1996 674-1678

Author Title of Article
M. Takizawa, A. Yoshimi, T. Katunuma, T. Yabe and C. Oshima Electron Stimulated Desorption Ions of Hydrogen and Deuterium Molecules in Extremely High Vacuum
Journal Volume Year Pages Concerned
Vacuum 47 1996 571-573

Author Title of Article
A. Nagashima, N. Tejima, Y. Gamou, T. Kawai, M. Terai and C. Oshima Electronic Spectroscopic Study of Monolayer Hexagonal Boron Nitride Formed on Metal Surfaces
Journal Volume Year Pages Concerned
International J. Modern Physics B 10 1996 3517-3537

Author Title of Article
A. Nagashima, Y. Gamou, M. Terai and C. Oshima Electronic States of Heteroepitaxial Double-layer System
Journal Volume Year Pages Concerned
Phys. Rev. B 54 1996 13491-13494

Author Title of Article
C. Oshima and A. Nagashima Ultra-thin Epitaxial Films of Graphite and Hexagonal Boron Nitride on Solid Surfaces
Journal Volume Year Pages Concerned
J. Phys. Condes. Matter 9 1997 1-20

Author Title of Article
C. Oshima An Apparatus for High Resolution Field Emission Spectroscopy
Journal Volume Year Pages Concerned
Adv. Colloid Interface Sci. 71/72 1997 353-369

Author Title of Article
K. Nagaoka, T. Yamashita, S. Uchiyama, M. Yamada, H. Fujii and C. Oshima Monocromatic Electron Emission from the Macroscopic Quantum State
Journal Volume Year Pages Concerned
Nature 396 1998 557-559

Author Title of Article
K. Nagaoka, T. Yamashita, S. Uchiyama, M. Yamada, H. Fujii and C. Oshima Angular Resolved Emission Spectra from Nb
Journal Volume Year Pages Concerned
Appl. Surf. Sci. 130/132 1998 512-517

Author Title of Article
M. Terai, N. Hasegawa, M. Okuzawa, S. Otani and C. Oshima Electronic States of Monolayer Micrographite on TiC(410) Surface
Journal Volume Year Pages Concerned
App. Surf. Sci. 130/132 1998 876-882

Author Title of Article
E. Rokuta, N. Yamamoto, Y. Hasegawa, M. Trenary, T. Nagao and C. Oshima Deformation of Boron Network at Lanthanum Boride (111) Surfuace
Journal Volume Year Pages Concerned
Surf. Sci. 416 1998 363-379

Author Title of Article
C. Oshima, H. Fujii, T. Yamashita, S. Uchi-yama, M. Yamada, K. Nagaoka and T. Sakurai Construction of a Low-temperature Gun and High-resolution Emission Spectra
Journal Volume Year Pages Concerned
Appl. Surf. Sci. 146 1999 143-147

Author Title of Article
E. Rokuta, Y. Hasegawa, A. Itoh, K. Yamashita, T. Tanaka, S. Otani and C. Oshima Vibrational Spectra of h-BN and Graphite Films on Facetted Ni(755)
Journal Volume Year Pages Concerned
Surf. Sci. 427/428 1999 97-101

Author Title of Article
C. Oshima Monochromatic Field Electron Emission from a Nb Superconductor
Journal Volume Year Pages Concerned
Ultramicroscopy 78 1999 27-32

Author Title of Article
K. Nagaoka, T. Yamashita, M. Yamada, H. Fujii, R. Seo, K. Matsuda, S. Uchiyama and C. Oshima Field Emission Energy Spectra from Superconducting and Normal States of an Nb Tip
Journal Volume Year Pages Concerned
Ultramicroscopy 79 1999 51-57

Author Title of Article
D. Farias, K. H. Rieder, A. M. Shikin, V. K. Adamchuk, T. Tanaka and C. Oshima Modification of the Surface Phonon Dispersion of a Graphite Monolayer Adsorbed on Ni(111) Caused by Intercalation of Yb, Cu and Ag
Journal Volume Year Pages Concerned
Surf. Sci. 454/456 2000 437-441

Author Title of Article
C. Oshima, T. Tanaka, A. Itoh, E. Rokuta and T. Sakurai A Hetero-Eepitaxial Multi-Atomic Layer System of Grarphene and h-BN
Journal Volume Year Pages Concerned
Surf. Rev. Lett. 5/6 2000 521-526

Author Title of Article
C. Oshima, A. Itoh, E. Rokuta, T. Tanaka, K. Yamashita and T. Sakurai A Hetero-Epitaxial-Double-Atomic Layer System of Monolayer Graphite/Monolayer h-BN on Ni(111)
Journal Volume Year Pages Concerned
Solid State Commun. 116 2000 37-40

Author Title of Article
C. Oshima, A. Itoh, E. Rokta, N. Tanaka and K. Yamashita Hetero-Epitaxial Double Atomic Layer Graphene/Monolayer h-BN Studied by HREELS
Journal Volume Year Pages Concerned
Inst. Phys. Conf. Ser. 165 2000 313-314.

Author Title of Article
K. Matsuda, H. Fuji, M. Komaki, Y. Murata, K. Nagaoka and C. Oshima Field Emission Spectra from a Superconducting Nb Tip
Journal Volume Year Pages Concerned
Inst. Phys Conf. Ser. 165 2000 481-483

Author Title of Article
M. Tagawa, M. Okuzawa, T. Kawasaki, C. Oshima, S. Otani and A. Nagashima Atomic Structure of TiC(100) Surface Studied with Low-Energy Electron Diffrcation Intensity Analysis
Journal Volume Year Pages Concerned
Phys. Rev. B 63 2001 In press

Author Title of Article
Katumi Nagaoka, Chuhei Oshima Ultra-coherent Electron Beams
Journal Volume Year Pages Concerned
J. Surf. Sci. Soc. Jpn. 17 1996 28-34

Author Title of Article
Y. Gamo, A. Nagashima, S. Wakabayashi, M. Terai and C. Oshima Atomic Structural Analysis of Monolayer h-BN on Ni(111)
Journal Volume Year Pages Concerned
J. Surf. Sci. Soc. Jpn. 17 1996 35

Author Title of Article
C. Oshima Why carbon systems have excellent characters in electron emission
Journal Volume Year Pages Concerned
Carbon 188 1999 155

Author Title of Article
C. Oshima Electron Emission from Superconducting Nb matals
Journal Volume Year Pages Concerned
FSST NEWS 74 1999 16-20

Author Title of Article
K. Mastuda, T. Yamashita and C. Oshima Ultra-Coherent Electron Beams
Journal Volume Year Pages Concerned
Electron Microscopy 35 2000 272-275

Author Title of Article
R. Ohno, M. Hosoda, M. Okuzawa, M. Tagawa, C. Oshima and S. Otani Electronic States of monolayer graphene on Pt and TiC (557) surface
Journal Volume Year Pages Concerned
Carbon 195 2000 400-404


back