| 1.Research Institution | Waseda University | |
| 2.Research Area | Physical and Engineering Science | |
| 3.Research Field | Next-generation Process Technologies | |
| 4.Term of Project | FY1996〜FY2000 | |
| 5.Project Number | 96P00403 | |
| 6.Title of Project | Wafer-Scale Fabrication Processes of Nano Dots |
| Name | Institution,Department | Title of Position |
| Osaka, Toshiaki | Waseda University, Kagami Memorial Laboratory for Material Science and Technology | Professor |
8.Core Members
| Names | Institution,Department | Title of Position |
| Ohdomari, Iwao | Waseda University, Kagami Memorial Laboratory for Material Science and Technology | Professor |
| Osaka, Tetsuya | Waseda University, Kagami Memorial Laboratory for Material Science and Technology | Professor |
| Oshima, Chuhei | Waseda University, Kagami Memorial Laboratory for Material Science and Technology | Professor |
9.Cooperating Researchers
10.Summary of Research Results
|
This project started in September 1996 with the aim of fabricating nanometer scale structures (nano-structure for short) on whole surfaces of silicon wafers within a reasonable time for practical use. We intended to establish an industrial technology for the mass production of the nano-structured materials as a process technology of the next generation. As a method for manufacturing the nano-structures, the scanning probe microscope (SPM) has widely been used. This method, however, is too time-consuming for industrial use. This is the motivation of our research on the wafer-scale process for nano-structure fabrication. After the research over a period of 4 and half years up to March 2001, we have got the following results. The aim mentioned above has almost been achieved by our new technique; the nanometer scale surface modification of material with "focused ion or electron beam irradiation" combined with wafer scale processing based on "electro-chemical technique". Concerning the former technique, the large arrays of nano etch pits 8 nm long on each side with a pitch of 20 nm were made on a silicon wafer. This density corresponds to 1.5Tbits/in2 and is the world record. For the latter technique, through the control of surface topography and property, we achieved new functions such as suppression of fluctuation in semiconductor device characteristics and molecular recognition. For example, the nano-structure array can be applied not only to the recording media of data, but also to managing inter-molecular interactions by controlling the surface morphology, surface potential, and hydrophilicity/hidrophobicity. We believe that the nano-material technology established by us could be applied to the wide fields of science and technology, such as information processing, bio-molecular recognition, long-life rechargeable batteries by suppressing the dendric growth of anode materials, surface control of artificial catalyst, and nano-tribology. |
11.Key Words
(1)nano-structure、(2)wafer-scale process、(3)surface modification
(4)beam irradiation、(5)nano etch pits、(6)molecular recognition
(7)recording media、(8)inter-molecular interactions、(9)hydrophilicity/hydropobicity
12.References
| Author | Title of Article | |||
| K. Kumamoto, T. Hoshino, K. Kokubun, T. Ishimaru and I. Ohdomari | Dynamic Growth Steps of n×n Dimer-adatom-stacking-fault Domains on the Quenced Si(111) Surface | |||
| Journal | Volume | Year | Pages Concerned | |
| Phys. Rev. B | 53 | 1996 | 12907-12911 | |
| Author | Title of Article | |||
| T. Hoshino, M. Hata, S. Oikawa, M. Tsuda and I. Ohdomari | Origin of Buckling-dimer-row Formation of Si(001) Surfaces | |||
| Journal | Volume | Year | Pages Concerned | |
| Phys. Rev. B | 54 | 1996 | 11331-11339 | |
| Author | Title of Article | |||
| M. Koh, K. Horita, B. Shigeta, K. Igarashi, T. Matsukawa, T. Tanii, S. Mori and I. Ohdomari | Quantitative Analysis of Radiation Induced Si/SiO2 Interface Defects by Means of He Single Ion Irradiation | |||
| Journal | Volume | Year | Pages Concerned | |
| Appl. Phys. Lett. | 68 | 1996 | 1552-1554 | |
| Author | Title of Article | |||
| T. Tanii, T. Matsukawa, S. Mori, M. Koh, B. Shigeta, K. Igarashi and I. Ohdomari | Nonscalability of Alpha-particle-induced Charge Collection Area | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 35 | 1996 | L688-L690 | |
| Author | Title of Article | |||
| M. Koyama, Y. Akita, C. Cheong, M. Koh, T. Matsukawa, K. Horita, B. Shigeta and I. Ohdomari | Quantitative Analysis of Degradation in Schottky Diode Characteristics Induced by Single Ion Implantation | |||
| Journal | Volume | Year | Pages Concerned | |
| Appl. Surf. Sci. | 104/105 | 1996 | 253-256 | |
| Author | Title of Article | |||
| M. Koh, K. Horita, B. Shigeta, T. Matsukawa, A. Kishida, T. Tanii, S. Mori and I. Ohdomari | Radiation Immunity of pMOSFETs and nMOSFETs Examined by Means of MeV He Single Ion Microprobe | |||
| Journal | Volume | Year | Pages Concerned | |
| Appl. Surf. Sci. | 104/105 | 1996 | 364-368 | |
| Author | Title of Article | |||
| T. Hoshino, T. Ishimaru, K. Kumamoto, H. Kawada and I. Ohdomari | Dynamic Features in Generation and Disappearance of Si(111)-7×7 Domains | |||
| Journal | Volume | Year | Pages Concerned | |
| Appl. Surf. Sci. | 107 | 1996 | 53-57 | |
| Author | Title of Article | |||
| T. Matsukawa, S. Suzuki, T. Fukai, T. Tanaka and I. Ohdomari | STM Observation of "Craters" on Graphite Surface Induced by Single Ion Implantation | |||
| Journal | Volume | Year | Pages Concerned | |
| Appl. Surf. Sci. | 107 | 1996 | 227-232 | |
| Author | Title of Article | |||
| T. Matsukawa, S. Mori, T. Tanii, T. Arimura, M. Koh, K. Igarashi, T. Sugimoto and I. Ohdomari | Evaluation of Soft-error Hardness of DRAMs under Quasi-heavy Ion Irradiation using He Single Ion Microprobe Technique | |||
| Journal | Volume | Year | Pages Concerned | |
| IEEE Trans. Nucl. Sci. | 43 | 1996 | 2952-2959 | |
| Author | Title of Article | |||
| M. Koh, K. Igarashi, T. Sugimoto, T. Matsukawa, S. Mori, T. Arimura and I. Ohdomari | Quantitative Estimation of Generation Rates of Si/SiO2 Interface Defects by MeV He Single Ion Irradiation | |||
| Journal | Volume | Year | Pages Concerned | |
| EEE Trans. Nucl. Sci. | 43 | 1996 | 2952-2959 | |
| Author | Title of Article | |||
| M. Koyama, C. Cheong, K. Yokoyama and I. Ohdomari | Estimation of Spatial Extent of a Defect Cluster in Si Induced by Single Ion Irradiation | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 36 | 1997 | L708-L710 | |
| Author | Title of Article | |||
| M. Koyama, C. Cheong, K. Yokoyama and I. Ohdomari | Influence of Near-surface Defects in Si Induced by Reactive Ion Etching on the Electrical Properties of the Pt/n-Si Interface | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 36 | 1997 | 6682-6686 | |
| Author | Title of Article | |||
| T. Watanabe, T. Hoshino and I. Ohdomari | Monte Carlo Study on Formation of Periodic Structures on Si(111) Surfaces | |||
| Journal | Volume | Year | Pages Concerned | |
| Surf. Sci. | 389 | 1997 | 375-381 | |
| Author | Title of Article | |||
| T. Hoshino, N. Kamijou, H. Fujiwara, T. Wantanbe and I. Ohdomari | Theoretical Investigation on the Formation Process of the Stacking-fault Triangle in the Si(111)-7×7 Structure | |||
| Journal | Volume | Year | Pages Concerned | |
| Surf. Sci. | 394 | 1997 | 119-128 | |
| Author | Title of Article | |||
| T. Watanabe, T. Hoshino and I. Ohdomari | Mechanism of H2 Desorption from H-terminated Si(001) Surfaces | |||
| Journal | Volume | Year | Pages Concerned | |
| Appl. Surf. Sci. | 117/118 | 1997 | 67-71 | |
| Author | Title of Article | |||
| M. Koh, K. Igarashi, T. Sugimoto, T. Matsukawa, S. Mori, T. Arimura and I. Ohdomari | Quantitative Characterization of Si/SiO2 Interface Traps Induced by Energetic Ions by Means of Single Ion Microprobe and Single Ion Beam Induced Charge Imaging | |||
| Journal | Volume | Year | Pages Concerned | |
| Appl. Surf. Sci. | 117/118 | 1997 | 171-175 | |
| Author | Title of Article | |||
| T. Matsukawa, Y. Fukai, S. Suzuki, K. Hara, M. Koh and I. Ohdomari | Development of Single Ion Implantation - Controllability of Implanted Ion Number | |||
| Journal | Volume | Year | Pages Concerned | |
| Appl. Surf. Sci. | 117/118 | 1997 | 677-683 | |
| Author | Title of Article | |||
| T. Shinada, H. Kimura, Y. Kumura and I. Ohdomari | Damage and Contamination Free Fabrication of Thin Si Wires with Highly Controlled Feature Size | |||
| Journal | Volume | Year | Pages Concerned | |
| Appl. Surf. Sci. | 117/118 | 1997 | 684-689 | |
| Author | Title of Article | |||
| I. Ohdomari, T. Watanabe, K. Kumamoto and T. Hoshino | Consideration of Atom Movement during Si Surface Reconstruction | |||
| Journal | Volume | Year | Pages Concerned | |
| Phase Transitions | 62 | 1997 | 245-258 | |
| Author | Title of Article | |||
| T. Matsukawa, S. Mori, T. Tanii, T. Arimura, M. Koh, K. Igarashi, T. Sugimoto and I. Ohdomari | Three-dimensinal Site Dependence of Single-ion-induced Charge Collection at a p-n Junction - Role of Funneling and Diffusion Processes under Different Ion Energy | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Appl. Phys. | 83 | 1998 | 3413-3418 | |
| Author | Title of Article | |||
| T. Matsukawa, T. Shinada, T. Fukai and I. Ohdomari | Key Technologies of Fib System for Single Ion Implantation | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Vac. Sci. Technol. B | 16 | 1998 | 2479-2483 | |
| Author | Title of Article | |||
| T. Shinada, Y. Kumura, J. Okabe, T. Matsukawa and I. Ohdomari | The Current Status of Single Ion Implantation | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Vac. Sci. Technol. B | 16 | 1998 | 2489-2493 | |
| Author | Title of Article | |||
| T. Watanabe, T. Handa, T. Hoshino and I. Ohdomari | Effects of Fixed Particles on Periodic Adatom Arrangements on Si(111) Unreconstructed Surfaces | |||
| Journal | Volume | Year | Pages Concerned | |
| Appl. Surf. Sci. | 130/132 | 1998 | 6-12 | |
| Author | Title of Article | |||
| T. Ishimaru, K. Shimada, T. Hoshino, H. Kawada and I. Ohdomari | Stepwise Change in Gibbs Free Energy Curve Observed in Si(111) DAS Domain Growth | |||
| Journal | Volume | Year | Pages Concerned | |
| Appl. Surf. Sci. | 130/132 | 1998 | 18-22 | |
| Author | Title of Article | |||
| K. Shimada, T. Ishimaru, S. Katsube, H. Kawada and I. Ohdomari | Reactivity of O2 with Si(111) Surfaces with Different Surface Structures | |||
| Journal | Volume | Year | Pages Concerned | |
| Appl. Surf. Sci. | 130/132 | 1998 | 170-175 | |
| Author | Title of Article | |||
| T. Ishimaru, T. Hoshino, H. Kawada, K. Shimada, T. Watanabe and I. Ohdomari | Influence of Oxygen on the Formation of Si(111)-7×7 Domains Studied by Scanning Tunneling Microscopy | |||
| Journal | Volume | Year | Pages Concerned | |
| Phys. Rev. B 58 | 58 | 1998 | 9863-9866 | |
| Author | Title of Article | |||
| K. Hara and I. Ohdomari | Morphology Control of Cu Clusters Formed on H-Si(111) Surface in Solution by Si Potential | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 37 | 1998 | L1333-L1335 | |
| Author | Title of Article | |||
| T. Ishimaru, K. Shimada, T. Hoshino, T. Yamawaki and I. Ohdomari | Size Changes of n×n Stacking-fault Half Units of Dimer-adatom-stacking-fault Structures on Quenched Si(111) Surfaces | |||
| Journal | Volume | Year | Pages Concerned | |
| Phys. Rev. B | 60 | 1999 | 13592-13597 | |
| Author | Title of Article | |||
| T. Matsukawa, K. Yokoyama, S. Sawara and I. Ohdomari | Lateral Migration of Point Defects in Si Induced by Localized Ion Implantation | |||
| Journal | Volume | Year | Pages Concerned | |
| Appl. Phys. Lett. | 74 | 1999 | 2663-2665 | |
| Author | Title of Article | |||
| M. Koh, K. Igarashi, T. Matsukawa, S. Sawara and I. Ohdomari | Quantitative Characterization of Ion-induced SiO2/Si Interface Traps by Means of Mev He Single-ion Irradiation | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Appl. Phys. | 85 | 1999 | 7814-7818 | |
| Author | Title of Article | |||
| T. Watanabe, H. Fujiwara, H. Noguchi, T. Hoshino and I. Ohdomari | Novel Interatomic Potential Energy Function for Si, O Mixed Systems | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 38 | 1999 | L366-L369 | |
| Author | Title of Article | |||
| K. Shimada, S. Katsube, T. Ishimaru, H. Kawada and I. Ohdomari | Consideration on the Quantitativeness of Reflection High Energy Electron Diffraction Intensity as a Tool to Monitor the Coverage of the Si(111) Surface by 7×7 Domains | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 38 | 1999 | 877-880 | |
| Author | Title of Article | |||
| T. Hoshino, T. Ishimaru, H. Kawada and I. Ohdomari | Dominant Role of Corner Holes in the Decomposition Process of Silicon Islands on Si(111) Surfaces | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 38 | 1999 | 1858-1862 | |
| Author | Title of Article | |||
| T. Shinada, A. Ishikawa, M. Fujita, K. Yamashita and I. Ohdomari | Influence of Secondary Electron Detection Efficiency on Controllability of Dopant Ion Number in Single Ion Implantation | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 38 | 1999 | 3419-3421 | |
| Author | Title of Article | |||
| K. Hara, T. Tanii and I. Ohdomari | Nucleation and Growth of Cu Adsorbates on Hydrogen-terminated Si(111) Surface in Solution | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 38 | 1999 | 6860-6863 | |
| Author | Title of Article | |||
| T. Ishimaru, K. Shimada, T. Hoshino and I. Ohdomari | Rearragement of Dimers in a Dimer-adatom-stacking-fault Structure on an Si(111) Surface | |||
| Journal | Volume | Year | Pages Concerned | |
| Surf. Sci. | 433/435 | 1999 | 401-404 | |
| Author | Title of Article | |||
| K. Shimada, S. Katsube, T. Ishimaru, H. Kawada and I. Ohdomari | Effect of Environmental O2 on Dynamical Process of the Si(111) "1×1"→7×7 Structural Phase Transition | |||
| Journal | Volume | Year | Pages Concerned | |
| Surf. Sci. | 433/435 | 1999 | 460-464 | |
| Author | Title of Article | |||
| K. Hara and I. Ohdomari | Control of Metal Nano-structure Morphology by Means of Applied Si Potential | |||
| Journal | Volume | Year | Pages Concerned | |
| Appl. Surf. Sci. | 144-145 | 1999 | 476-479 | |
| Author | Title of Article | |||
| T. Watanabe And I. Ohdomari | Modeling of SiO2/Si(100) Interface Structure by using Extended Stillinger-Weber Potential | |||
| Journal | Volume | Year | Pages Concerned | |
| Thin Solid Films | 343/344 | 1999 | 370-373 | |
| Author | Title of Article | |||
| H. Kubota, T. Sumita, S. Takami, T. Shinada and I. Ohdomari | Nano-fabrication of CDW and Its Negative Resistance Phenomenon | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Phys. France | 9 | 1999 | 175-177 | |
| Author | Title of Article | |||
| K. Hara, M. Koh, T. Matsukawa, T. Tanii and I. Ohdomari | Single-ion Detection using Nuclear Track Detector Cr-39 Plastic | |||
| Journal | Volume | Year | Pages Concerned | |
| Rev. Sci. Instrum. | 70 | 1999 | 4536-4538 | |
| Author | Title of Article | |||
| T. Sumita, T. Nagai, H. Kubota, T. Matsukawa and I. Ohdomari | Nano-fabricated Cdw by Ion-beam Irradiation | |||
| Journal | Volume | Year | Pages Concerned | |
| Synthetic Metals | 103 | 1999 | 2234-2237 | |
| Author | Title of Article | |||
| M. Koh, T. Shinada, S. Sawara, T. Goto, Y. Ando and I. Ohdomari | Simple Fabrication of Nanopyramid Array (NPA) on Si Surface by Means Focused Ion Beam Patterning Wet Etching | |||
| Journal | Volume | Year | Pages Concerned | |
| Ext. Abst. SSDM - Tokyo | 1999 | 184-185 | ||
| Author | Title of Article | |||
| K. Shimada, T. Ishimaru, T. Watanabe, T. Yamawaki, M. Osuka, T. Hoshino and I. Ohdomari | Kinetics of Dimer-adatom-stacking-fault Reconstruction on Laser Quenched Si(111) Surfaces | |||
| Journal | Volume | Year | Pages Concerned | |
| Phys. Rev. B | 61 | 2000 | 2546-2551 | |
| Author | Title of Article | |||
| T. Ishimaru, T. Hoshino, K. Shimada, T. Yamawaki and I. Ohdomari | Formation and Annihilation of Various Stacking-fault Half Units in Dimer-adatom-stacking-fault Structures on Quenched Si(111) Surfaces | |||
| Journal | Volume | Year | Pages Concerned | |
| Phys. Rev. B | 62 | 2000 | 15577-15580 | |
| Author | Title of Article | |||
| T. Shinada, A. Ishikawa, C. Hinoshita, M. Koh and I. Ohdomari | Reduction of Fluctuation in Semiconductor Conductivity by One-by-one Ion Implantation of Dopant Atoms | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys | 39 | 2000 | L265-L268 | |
| Author | Title of Article | |||
| M. Koh, S. Sawara, T. Goto, Y. Ando, T. Shinada and I. Ohdomari | New Process for Si Nanopyramid Array (NPA) Fabrication by Means of Ion Beam Irradiation and Wet Etching | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 39 | 2000 | 2186-2188 | |
| Author | Title of Article | |||
| M. Koh, S. Sawara, T. Goto, Y. Ando, T. Shinada, I. Ohdomari | High-density Nanoetchipit-array Fabrication on Si Surface using Ultrathin SiO2 Mask | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 39 | 2000 | 5352-5355 | |
| Author | Title of Article | |||
| T. Watanabe and I. Ohdomari | Modeling of SiO2/Si(001) Structure Including Step and Terrace Configurations | |||
| Journal | Volume | Year | Pages Concerned | |
| Appl. Surf. Sci. | 162/163 | 2000 | 116-121 | |
| Author | Title of Article | |||
| S. Sawara, M. Koh, T. Goto, Y. Ando, T. Shinada And I. Ohdomari | Simple Fabrication of High Density Concave Nanopyramid Array (NPA) on Si Surface | |||
| Journal | Volume | Year | Pages Concerned | |
| Appl. Surf. Sci. | 159/160 | 2000 | 481-485 | |
| Author | Title of Article | |||
| T. Shinada, A. Ishikawa, C. Hinoshita, M. Koh and I. Ohdomari | Flat-band Voltage Control of a Back-gate Mosfet by Single Ion Implantation | |||
| Journal | Volume | Year | Pages Concerned | |
| Appl. Surf. Sci. | 162/163 | 2000 | 499-503 | |
| Author | Title of Article | |||
| M. Koh, S. Sawara, T. Shinada, T. Goto, A. Ishikawa and I. Ohdomari | Simple Nanostructuring of Si Surfaces by Means of Focused Beam Patterning and Wet Etching | |||
| Journal | Volume | Year | Pages Concerned | |
| Appl. Surf. Sci. | 162/163 | 2000 | 599-603 | |
| Author | Title of Article | |||
| T. Tanii, K. Hara, K. Ishibashi, K. Ohta and I. Ohdomari | Nucleation and Growth of Cu Clusters on Highly Oriented Pyrolytic Graphite Observed with an In Situ Electrochemical Scanning Tunneling Microscope | |||
| Journal | Volume | Year | Pages Concerned | |
| Appl. Surf. Sci. | 162/163 | 2000 | 662-665 | |
| Author | Title of Article | |||
| T. Matsukawa and I. Ohdomari | Single Ion Irradiation and Its Application | |||
| Journal | Volume | Year | Pages Concerned | |
| Ho-sha-sen(in Japanese) | 23 | 1997 | 25-34 | |
| Author | Title of Article | |||
| K. Hara and I. Ohdomari | Wafer Scale Nanotechnology Based on Single Ion Implantation and Electrochemical Processes | |||
| Journal | Volume | Year | Pages Concerned | |
| Tech. Rep., IEICE(in Japanese) | 7 | 1997 | 35-40 | |
| Author | Title of Article | |||
| K. Hara and I. Ohdomari | Wafer Scale Nanotechnology Based on Single Ion Implantation and Electrochemical Processes | |||
| Journal | Volume | Year | Pages Concerned | |
| J. IEICE(in Japanese) | J81-C-2 | 1998 | 675-679 | |
| Author | Title of Article | |||
| I. Ohdomari, K. Shimada, and T. Ishimaru | The New Experimental Facts on Si(111)-n×n Structure and Its Meaning | |||
| Journal | Volume | Year | Pages Concerned | |
| Shinku(in Japanese) | 42 | 1999 | 603-607 | |
| Author | Title of Article | |||
| Tetsuya Osaka, Nao Takano and Shinichi Komaba | Fabrication of Nickel Dots Using Selective Electroless Deposition on Silicon Wafer | |||
| Journal | Volume | Year | Pages Concerned | |
| Chem. Lett. | 7 | 1998 | 657-658 | |
| Author | Title of Article | |||
| Nao Takano, Naohiro Hosoda, Taro Yamada and Tetsuya Osaka | Mechanism of the Chemical Deposition of Nickel on Silicon Wafer in Aqueous Solution | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Electrochem. Soc. | 146 | 1999 | 1407-1411 | |
| Author | Title of Article | |||
| Nao Takano, Naohiro Hosoda, Taro Yamada and Tetsuya Osaka | Effect of Oxidized Silicon Surface on Chemical Deposition of Nickel on n-type Silicon Wafer | |||
| Journal | Volume | Year | Pages Concerned | |
| Electrochim. Acta | 44 | 1999 | 3743-3749 | |
| Author | Title of Article | |||
| Nao Takano, Daisuke Niwa, Taro Yamada and Tetsuya Osaka | Nickel Deposition Behavior on n-Type Silicon Wafer for Fabrication of Minute Nickel Dots | |||
| Journal | Volume | Year | Pages Concerned | |
| Electrochim. Acta | 45 | 2000 | 3263-3268 | |
| Author | Title of Article | |||
| Taro Yamada, Nao Takano, Keiko Yamada, Shuhei Yoshitomi, Tomoyuki Inoue and Tetsuya Osaka | Application of Organic Monolayers Formed on Si(111): Possibilities for Nanometer-scale Patterning | |||
| Journal | Volume | Year | Pages Concerned | |
| Electrochem. Commn. | 3 | 2001 | 67-72 | |
| Author | Title of Article | |||
| Taro Yamada, Nao Takano, Keiko Yamada, Shuhei Yoshitomi, Tomoyuki Inoue and Tetsuya Osaka | Evaluation of Organic Monolayers Forms on Si(111) and the Effects of Electron Bombardment Aiming for Nano-scale Engineering | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | in press | 2001 | ||
| Author | Title of Article | |||
| Jun Nakamura, Tomohiko Kagawa and Toshiaki Osaka | Nucleation of Au on KC1(001) | |||
| Journal | Volume | Year | Pages Concerned | |
| Surf. Sci. | 389 | 1997 | 109-115 | |
| Author | Title of Article | |||
| Jun Nakamura, Hiroshi Nakajima and Toshiaki Osaka | Structural Stability and Electronic Origin of the GaAs(111)A-2×2 Surface | |||
| Journal | Volume | Year | Pages Concerned | |
| Appl. Surf. Sci. | 121/122 | 1997 | 249-252 | |
| Author | Title of Article | |||
| Masayasu Nishizawa, Toyoaki Eguchi, Seiichi Omoto and Toshiaki Osaka | STM Study of the InSb(111)A-(2×6)Surface | |||
| Journal | Volume | Year | Pages Concerned | |
| Appl. Surf. Sci. | 121/122 | 1997 | 204-207 | |
| Author | Title of Article | |||
| Toyoaki Eguchi, Jun Nakamura and Toshiaki Osaka | Structure and Electronic States of the α-Sn(111)-(2×2)Surface | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Phys. Soc. Jpn. | 67 | 1998 | 381-384 | |
| Author | Title of Article | |||
| Tetsuya Mishima and Toshiaki Osaka | Profile Imaging of the InSb{111}A, B-(2×2)Surfaces | |||
| Journal | Volume | Year | Pages Concerned | |
| Surf. Sci. | 395 | 1998 | L256-L260 | |
| Author | Title of Article | |||
| Masayasu Nishizawa, Toyoaki Eguchi, Tetsuya Misima, Jun Nakamura and Toshiaki Osaka | Structure of the InSb(111)A-(2√3×2√3)-R30° Surface and Dynamical Formation Processes | |||
| Journal | Volume | Year | Pages Concerned | |
| Phys. Rev. B | 57 | 1998 | 6317-6320 | |
| Author | Title of Article | |||
| Testuya Mishima, Jun Nakamura, Kenji Tsukada, Masayasu Nishizawa, Toyoaki Eguchi and Toshiaki Osaka | Direct Imaging of the Evolving Au/InSb(111)B Interface | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Vac. Sci. and Technol. B | 16 | 1998 | 2324-2327 | |
| Author | Title of Article | |||
| Jun Nakamura, Testuya Mishima, Moto-hisa Masui, Sung-Pyo Cho, Masayasu Nishizawa, Toyoaki Eguchi and Toshiaki Osaka | Chemical Bonding Features for Faultily Stacked Interface of GaAs{111} | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Vac. Sci. and Technol. B | 16 | 1998 | 2426-2431 | |
| Author | Title of Article | |||
| R. Minato, T. Eguchi, S. Furuta, Y. Miura, R. Kato, H. Morita, T. Funaki, H. Sato, T. Osaka | Surface core-level shift as assessed by using the Voigt function | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Surf. Sci. Soc. Jpn. | 21 | 2000 | 426-433 | |
| Author | Title of Article | |||
| N. Yamamoto, E. Rokuta, Y. Hasegawa, T. Nagao, M. Trenary and C. Oshima | Oxygen Adsorption Sites on the PrB6(100)Surfaces | |||
| Journal | Volume | Year | Pages Concerned | |
| Surf. Sci. | 348 | 1996 | 133-142 | |
| Author | Title of Article | |||
| K. Nagaoka, H. Ogawa, N. Arai, S. Uchiyama, T. Yamashita, C. Oshima and S. Otani | Energy Ditribution of Filed Emission Electrons from a Nb<111>Tip | |||
| Journal | Volume | Year | Pages Concerned | |
| Surf. Sci. | 357/358 | 1996 | 218-221 | |
| Author | Title of Article | |||
| A. Nagashima, N. Tejima, Y. Gamou, T. Kawai and C. Oshima | lectronic States of Monolayer Hexagonal Boron Nitride Formed on the Metal Surfaces | |||
| Journal | Volume | Year | Pages Concerned | |
| Surf. Sci. | 357/358 | 1996 | 307-311 | |
| Author | Title of Article | |||
| H. Ogawa, N. Arai, K. Nagaoka, S. Uchiyama, T. Yamashita, H. Itou and C. Oshima | Energy Spectra of Filed Emission Electrons from a W<310>Tip | |||
| Journal | Volume | Year | Pages Concerned | |
| Surf. Sci. | 357/358 | 1996 | 371-375 | |
| Author | Title of Article | |||
| N. Yamamoto, E. Rokuta, Y. Hasegawa, T. Nagao, M. Trenary and C. Oshima | Oxygen Adsorption on the LaB6(100)and(111)Surfaces | |||
| Journal | Volume | Year | Pages Concerned | |
| Surf. Sci. | 357/358 | 1996 | 708-711 | |
| Author | Title of Article | |||
| E. Rokuta, N. Yamamoto, Y. Hasegawa, T. Nagao, M. Trenary and C. Oshima | Phonon Dispersion of the LaB6(111)Surfaces | |||
| Journal | Volume | Year | Pages Concerned | |
| Surf. Sci. | 357/358 | 1996 | 712-716 | |
| Author | Title of Article | |||
| E. Rokuta, N. Yamamoto, Y. Hasegawa, T. Nagao, M. Trenary and C. Oshima | Oxygen Chemisorbed LaB6(100), (110)and(111)Surfaces | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Vac. Sci. Technol. A | 14 | 1996 | 674-1678 | |
| Author | Title of Article | |||
| M. Takizawa, A. Yoshimi, T. Katunuma, T. Yabe and C. Oshima | Electron Stimulated Desorption Ions of Hydrogen and Deuterium Molecules in Extremely High Vacuum | |||
| Journal | Volume | Year | Pages Concerned | |
| Vacuum | 47 | 1996 | 571-573 | |
| Author | Title of Article | |||
| A. Nagashima, N. Tejima, Y. Gamou, T. Kawai, M. Terai and C. Oshima | Electronic Spectroscopic Study of Monolayer Hexagonal Boron Nitride Formed on Metal Surfaces | |||
| Journal | Volume | Year | Pages Concerned | |
| International J. Modern Physics B | 10 | 1996 | 3517-3537 | |
| Author | Title of Article | |||
| A. Nagashima, Y. Gamou, M. Terai and C. Oshima | Electronic States of Heteroepitaxial Double-layer System | |||
| Journal | Volume | Year | Pages Concerned | |
| Phys. Rev. B | 54 | 1996 | 13491-13494 | |
| Author | Title of Article | |||
| C. Oshima and A. Nagashima | Ultra-thin Epitaxial Films of Graphite and Hexagonal Boron Nitride on Solid Surfaces | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Phys. Condes. Matter | 9 | 1997 | 1-20 | |
| Author | Title of Article | |||
| C. Oshima | An Apparatus for High Resolution Field Emission Spectroscopy | |||
| Journal | Volume | Year | Pages Concerned | |
| Adv. Colloid Interface Sci. | 71/72 | 1997 | 353-369 | |
| Author | Title of Article | |||
| K. Nagaoka, T. Yamashita, S. Uchiyama, M. Yamada, H. Fujii and C. Oshima | Monocromatic Electron Emission from the Macroscopic Quantum State | |||
| Journal | Volume | Year | Pages Concerned | |
| Nature | 396 | 1998 | 557-559 | |
| Author | Title of Article | |||
| K. Nagaoka, T. Yamashita, S. Uchiyama, M. Yamada, H. Fujii and C. Oshima | Angular Resolved Emission Spectra from Nb | |||
| Journal | Volume | Year | Pages Concerned | |
| Appl. Surf. Sci. | 130/132 | 1998 | 512-517 | |
| Author | Title of Article | |||
| M. Terai, N. Hasegawa, M. Okuzawa, S. Otani and C. Oshima | Electronic States of Monolayer Micrographite on TiC(410) Surface | |||
| Journal | Volume | Year | Pages Concerned | |
| App. Surf. Sci. | 130/132 | 1998 | 876-882 | |
| Author | Title of Article | |||
| E. Rokuta, N. Yamamoto, Y. Hasegawa, M. Trenary, T. Nagao and C. Oshima | Deformation of Boron Network at Lanthanum Boride (111) Surfuace | |||
| Journal | Volume | Year | Pages Concerned | |
| Surf. Sci. | 416 | 1998 | 363-379 | |
| Author | Title of Article | |||
| C. Oshima, H. Fujii, T. Yamashita, S. Uchi-yama, M. Yamada, K. Nagaoka and T. Sakurai | Construction of a Low-temperature Gun and High-resolution Emission Spectra | |||
| Journal | Volume | Year | Pages Concerned | |
| Appl. Surf. Sci. | 146 | 1999 | 143-147 | |
| Author | Title of Article | |||
| E. Rokuta, Y. Hasegawa, A. Itoh, K. Yamashita, T. Tanaka, S. Otani and C. Oshima | Vibrational Spectra of h-BN and Graphite Films on Facetted Ni(755) | |||
| Journal | Volume | Year | Pages Concerned | |
| Surf. Sci. | 427/428 | 1999 | 97-101 | |
| Author | Title of Article | |||
| C. Oshima | Monochromatic Field Electron Emission from a Nb Superconductor | |||
| Journal | Volume | Year | Pages Concerned | |
| Ultramicroscopy | 78 | 1999 | 27-32 | |
| Author | Title of Article | |||
| K. Nagaoka, T. Yamashita, M. Yamada, H. Fujii, R. Seo, K. Matsuda, S. Uchiyama and C. Oshima | Field Emission Energy Spectra from Superconducting and Normal States of an Nb Tip | |||
| Journal | Volume | Year | Pages Concerned | |
| Ultramicroscopy | 79 | 1999 | 51-57 | |
| Author | Title of Article | |||
| D. Farias, K. H. Rieder, A. M. Shikin, V. K. Adamchuk, T. Tanaka and C. Oshima | Modification of the Surface Phonon Dispersion of a Graphite Monolayer Adsorbed on Ni(111) Caused by Intercalation of Yb, Cu and Ag | |||
| Journal | Volume | Year | Pages Concerned | |
| Surf. Sci. | 454/456 | 2000 | 437-441 | |
| Author | Title of Article | |||
| C. Oshima, T. Tanaka, A. Itoh, E. Rokuta and T. Sakurai | A Hetero-Eepitaxial Multi-Atomic Layer System of Grarphene and h-BN | |||
| Journal | Volume | Year | Pages Concerned | |
| Surf. Rev. Lett. | 5/6 | 2000 | 521-526 | |
| Author | Title of Article | |||
| C. Oshima, A. Itoh, E. Rokuta, T. Tanaka, K. Yamashita and T. Sakurai | A Hetero-Epitaxial-Double-Atomic Layer System of Monolayer Graphite/Monolayer h-BN on Ni(111) | |||
| Journal | Volume | Year | Pages Concerned | |
| Solid State Commun. | 116 | 2000 | 37-40 | |
| Author | Title of Article | |||
| C. Oshima, A. Itoh, E. Rokta, N. Tanaka and K. Yamashita | Hetero-Epitaxial Double Atomic Layer Graphene/Monolayer h-BN Studied by HREELS | |||
| Journal | Volume | Year | Pages Concerned | |
| Inst. Phys. Conf. Ser. | 165 | 2000 | 313-314. | |
| Author | Title of Article | |||
| K. Matsuda, H. Fuji, M. Komaki, Y. Murata, K. Nagaoka and C. Oshima | Field Emission Spectra from a Superconducting Nb Tip | |||
| Journal | Volume | Year | Pages Concerned | |
| Inst. Phys Conf. Ser. | 165 | 2000 | 481-483 | |
| Author | Title of Article | |||
| M. Tagawa, M. Okuzawa, T. Kawasaki, C. Oshima, S. Otani and A. Nagashima | Atomic Structure of TiC(100) Surface Studied with Low-Energy Electron Diffrcation Intensity Analysis | |||
| Journal | Volume | Year | Pages Concerned | |
| Phys. Rev. B | 63 | 2001 | In press | |
| Author | Title of Article | |||
| Katumi Nagaoka, Chuhei Oshima | Ultra-coherent Electron Beams | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Surf. Sci. Soc. Jpn. | 17 | 1996 | 28-34 | |
| Author | Title of Article | |||
| Y. Gamo, A. Nagashima, S. Wakabayashi, M. Terai and C. Oshima | Atomic Structural Analysis of Monolayer h-BN on Ni(111) | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Surf. Sci. Soc. Jpn. | 17 | 1996 | 35 | |
| Author | Title of Article | |||
| C. Oshima | Why carbon systems have excellent characters in electron emission | |||
| Journal | Volume | Year | Pages Concerned | |
| Carbon | 188 | 1999 | 155 | |
| Author | Title of Article | |||
| C. Oshima | Electron Emission from Superconducting Nb matals | |||
| Journal | Volume | Year | Pages Concerned | |
| FSST NEWS | 74 | 1999 | 16-20 | |
| Author | Title of Article | |||
| K. Mastuda, T. Yamashita and C. Oshima | Ultra-Coherent Electron Beams | |||
| Journal | Volume | Year | Pages Concerned | |
| Electron Microscopy | 35 | 2000 | 272-275 | |
| Author | Title of Article | |||
| R. Ohno, M. Hosoda, M. Okuzawa, M. Tagawa, C. Oshima and S. Otani | Electronic States of monolayer graphene on Pt and TiC (557) surface | |||
| Journal | Volume | Year | Pages Concerned | |
| Carbon | 195 | 2000 | 400-404 | |