Summary of Research Project Results Under the JSPS FY2000
"Research for the future Program"



1.Research Institution Meijo University
 
2.Research Area Physical and Engineering Sciences
 
3.Research Field Atomic-scale Surface and Interface Dynamics
 
4.Term of Project FY1996〜FY2000
 
5.Project Number 96P00204
 
6.Title of Project Dynamic Process and Control of the Buffer Layer at the Interface in a Highly-Mismatched System

7.Projetct Leader
Name Institution,Department Title of Position
Isamu Akasaki Faculty of Science and Technology Professor

8.Core Members

Names Institution,Department Title of Position
Yoshikazu Takeda Nagoya University, Graduate School of Engineering Professor
Kazumasa Hiramatsu Faculty of Engineering, Mie University Professor
Hiroshi Amano Faculty of Science and Technology, Meijo University Associate Professor

9.Cooperating Researchers

Names Institution,Department Title of Position
Kiyoshi Takahashi Teikyo University of Science and Engineering Professor
Noriyuki Kuwano Advanced Science and Technology Center for Cooperative Research, Kyushu University Professor
Masao Tabuchi Nagoya University, Graduate School of Engineering Assistant Professor

10.Summary of Research Results

This report is the summary of the five years program on "Dynamic Process and Control of the Buffer Layer at the Interface in a Highly-Mismatched System" mainly performed at Meijo University. In this program, we focused on the understanding the mechanism of low temperature deposited buffer layer in atomic scale, especially how it transfers the crystalline information from the highly mismatched substrate to the upper group III nitride layers. In-situ stress monitoring, X-ray CTR and fluolescent EXAFS were performed to clarify the process of nitride growth. These understanding as well as the detailed study on the crystallization process by high-temperature TEM and the behavior of dislocations lead to the development of very low-dislocation density GaN and AlGaN. High performance UV detector and UV-LED were achieved using low dislocation density crystals.

11.Key Words

(1)Group III nitrides、(2)Low temperature deposited layer、(3)Strain and Stress
(4)Lateral growth、(5)X-ray CTR、(6)Fluolescent EXAFS
(7)Dislocations、(8)Mass transport、(9)Aluminum Indium Nitride

12.References

[Reference Articles]
Author Title of Article
T. Detchprohm, T. Kuroda, K. Hiramatsu, N. Sawaki and H. Goto The selective growth in hydride vapor phase epitaxy of GaN
Journal Volume Year Pages Concerned
Inst. Phys. Conf. Ser. 142・5 1996 859-862

Author Title of Article
K. Hiramatsu, S. Kitamura and N. Sawaki Facets formation mechanism of GaN hexagonal pyramids on dot-patterns visa selective MOVPE
Journal Volume Year Pages Concerned
Mat. Res. Soc. Symp. Proc. 395 1996 267-271

Author Title of Article
H. Siege, P. Thurian, L. Eckey, A. Hoffman, C. Thomsen, B. K. Meyer, H. Amano, I. Akasaki, T. Detchprohm, and K. Hiramatsu Spacially resolved photoluminescence and Raman scattering experiments on the GaN/sapphire interface
Journal Volume Year Pages Concerned
Appl. Phys. Lett. 68 1996 1265-1266

Author Title of Article
I. Akasaki and H. Amano Crystal growth of column-III nitride semiconductors and their electrical and optical properties
Journal Volume Year Pages Concerned
J. Crystal Growth 163 1996 86-92

Author Title of Article
M. Koike, S. Yamasaki, S. Nagai, N. Koide, S. Asami, H. Amano and I. Akasaki High-quality GaInN/GaN multiple quantum wells
Journal Volume Year Pages Concerned
Appl. Phys. Lett. 68 1996 1403-1405

Author Title of Article
D. Behr, J. Wagner, J. Schneider, H. Amano and I. Akasaki Resonant Raman scattering in hexagonal GaN
Journal Volume Year Pages Concerned
Appl. Phys. Lett. 68 1996 2404-2406

Author Title of Article
C. Wetzel, E. E. Haller, H. Amano and I. Akasaki Infrared reflection on GaN and AlGaN thin film heterostructures with AlN buffer layers
Journal Volume Year Pages Concerned
Appl. Phys. Lett. 68 1996 2547-2549

Author Title of Article
Y. J. Wang, R. Kaplan, H. K. Ng, K. Doverspike, D. K. Gaskill, T. Ikedo, H. Amano and I. Akasaki Magneto-optical studies of GaN and GaN/AlxGa1-xN:Donor Zeeman spectroscopy and two dimensional electron gas cyclotron resonance
Journal Volume Year Pages Concerned
J. Appl. Phys. 79 1996 8007-8010

Author Title of Article
I. Akasaki, S. Sota, H. Sakai, T. Tanaka, M. Koike and H. Amano Shortest wavelength semiconductor laser diode
Journal Volume Year Pages Concerned
Electronics Letters 32 1996 1105-1106

Author Title of Article
J. Burm, W. J. Schaff, L. F. Eastman, H. Amano and I. Akasaki 75A GaN channel modulation doped field effect transistors
Journal Volume Year Pages Concerned
Appl. Phys. Lett 68 1996 2849-2851

Author Title of Article
J. P. Bergman, T. Luntstrom, B. Monemar, H. Amano and I. Akasaki Photoluminescence related to the two-dimensional electron gas at a GaN/AlGaN heterointerface
Journal Volume Year Pages Concerned
Appl. Phys. Lett. 68 1996 3456-3458

Author Title of Article
T. Takeuchi, H. Takeuchi, S. Sota, H. Sakai, H. Amano and I. Akasaki Optical Properties of Strained AlGaN on GaN
Journal Volume Year Pages Concerned
Jpn. J. of Appl. Phys. 36 1997 L177-L179

Author Title of Article
T. Takeuchi, S. Sota, M. Katsuragawa, M. Komori, H. Takeuchi, H. Amano and I. Akasaki Quantum-Confined Stark Effect due to Piezoelectric Fields in GaInN Strained Quantum Wells
Journal Volume Year Pages Concerned
Jpn. J. of Appl. Phys. 36 1997 L382-L385

Author Title of Article
S. Ruvimov, Z. Liliental-Weber, C. Dieker, J. Washburn, M. Koike, H. Amano and I. Akasaki TEM/HREM ANALYSIS OF DEFECTS IN GaN EPITAXIAL LAYERS GROWN BY MOVPE ON SiC AND SAPPHIRE
Journal Volume Year Pages Concerned
Mat. Res. Soc. Symp. Proc. 468 1997 287-292

Author Title of Article
M. Kunzer, J. Baur, U. Kaufmann, J. Schneider, H. Amano and I. Akasaki Properties of Mg and Zn acceptors in MOVPE GaN as studied by optically detected magnetic
Journal Volume Year Pages Concerned
Solid-State Electronics 41 1997 189-193

Author Title of Article
B. Monemar, J. P. Bergman, I. A. Buyanova, H. Amano, I. Akasaki, T. Detchprohm, K. Hiramatsu and N. Sawaki The excitonic bandgap of GaN: Dependence on substrate
Journal Volume Year Pages Concerned
Solid-State Electronics 41 1997 1403-1405

Author Title of Article
A. Hoffmann, L. Eckey, P. Maxim, J. -CHR, Holst, R. Heitz, D. M. Hofmann, D. Kovalev, G. Stevde, D. Volm, B. D. Meyer, T. Detchprohm, K. Hiramatsu, H. Amano and I. Akasaki Dynamic study of the yellow luminescence band in GaN
Journal Volume Year Pages Concerned
Solid State Electronics 41 1997 275-278

Author Title of Article
H. Sakai, T. Takeuchi, H. Amano and I. Akasaki GaNの誘導放出機構と混晶効果
Journal Volume Year Pages Concerned
レーザ研究 25 1997 510-513

Author Title of Article
I. Akasaki and H. Amano Progress and prospect of group-□ nitride semiconductors
Journal Volume Year Pages Concerned
J. of Crystal Growth 175/176 1997 29-36

Author Title of Article
W. Li, P. Bergman, B. Monemar, H. Amano and I. Akasaki Photoluminescence decay dynamics in an InGaN/GaN/AlGaN single quantum well
Journal Volume Year Pages Concerned
J. of Appl. Phys. 81 1997 1005-1007

Author Title of Article
I. Akasaki and H. Amano Crystal Growth and Conductivity of Group□ Nitride Semiconductors and Their Application to Short Wavelength Light Emitters
Journal Volume Year Pages Concerned
Jpn. J. of Appl. Phys. 36 1997 5393-5408

Author Title of Article
M. Iwaya, T. Takeuchi, S. Yamaguchi, C. Wetzel, H. Amano and I. Akasaki Reduction of Etch Pit Density in Organometallic Vapor Phase Epitaxy-Grown GaN on Sapphire by Insertion of a Low-Temperature-Deposited Buffer Layer between High-Temperature-Grown GaN
Journal Volume Year Pages Concerned
Jpn. J. of Appl. Phys. (to be published)   1998  

Author Title of Article
桑野範之、滝 海、沖 憲典、川口靖利、平松和政、澤木宣彦 有機金属気相法で作製したInGaN厚膜の成長過程のTEM観察
Journal Volume Year Pages Concerned
日本結晶成長学会誌 25(印刷中) 1998  

Author Title of Article
K. Hiramatsu, H. Matsushima, T. Shibata, N. Sawaki, K. Tadatomo, H. Okagawa, Y. Ohuchi, Y. Honda, and T. Matsue Selective area growth of GaN by MOVPE and HVPE
Journal Volume Year Pages Concerned
Mat. Res. Soc. Symp. Proc. (in press)   1998  

Author Title of Article
M. Tabuchi, N. Matsumoto, Y. Takeda, T. Takeuchi, H. Amano, and I. Akasaki Crystal quality and surface structure of sapphire and buffer layers on sapphire revealed by CTR scattering
Journal Volume Year Pages Concerned
Appl. Surf. Sci., (in press)   1998  

Author Title of Article
M. Tabuchi, N. Matsumoto, Y. Takeda, T. Takeuchi, H. Amano, and I. Akasaki Crystal quality and surface structure of sapphire and buffer layers on sapphire revealed by CTR scattering
Journal Volume Year Pages Concerned
ICNS97 ICNS'97, Japan, 27-31 Oct. 1997., Symposium Proc.   1998  

Author Title of Article
桑野範之、滝 海、沖 憲典、川口靖利、平松和政、澤木宣彦 有機金属気相法で作製したInGaN厚膜の成長過程のTEM観察 -組成不均一の発生-
Journal Volume Year Pages Concerned
日本結晶成長学会誌 25.2 1998 106-112

Author Title of Article
桑野範之 GaN系材料の微細構造 -FIBの応用-
Journal Volume Year Pages Concerned
第9回電顕サマースクール電子顕微鏡 基礎技術と応用1998 ~極微構造解明の新展開~ 第9回電顕サマースクール実行委員会 編 学際企画   1998 116-121

Author Title of Article
K. Tsukamoto, W. Taki, N. Kuwano, K. Oki, T. Shibata, N. Sawaki and K. Hiramatsu Large-Angle Gradual Tilting of Crystallographic Orientations of HVPE-Grown GaN Selectively Grown on MOVPE-GaN
Journal Volume Year Pages Concerned
Proc. 2nd Int. Sym. Blue Laser and Light Emitting Diodes, Chiba, 1998, Ed., K. Onabe, K. Hiramatsu, K. Itaya and Y. Nakano, Ohmsha, Tokyo   1998 488-491

Author Title of Article
桑野範之、沖 憲典 InxGa1-xN/GaN/LT-AlN/α-Al2O3(0001)に形成された貫通転位先端のピット
Journal Volume Year Pages Concerned
日本金属学会会報まてりあ 37 1998 992

Author Title of Article
I. Akasaki The Evolution of Nitride Semiconductors
Journal Volume Year Pages Concerned
Mat. Res. Soc. Symp. Proc. 482 1998 3-14

Author Title of Article
H. Amano, T. Takeuchi, S. Yamaguchi, S. Nitta, M. Kariya, M. Iwaya, C. Wetzel and I. Akasaki Structural Properties of Nitrides Grown by OMVPE on Sapphire Substrate
Journal Volume Year Pages Concerned
Mat. Res. Soc. Symp. Proc. 482 1998 479-488

Author Title of Article
C. Wetzel, H. Amano, I. Akasaki, T. Suski, J. W. Ager, E. R. Weber, E. E. Haller and B. K. Meyer Localized Donors in GaN: Spectroscopy using Large Pressures
Journal Volume Year Pages Concerned
Mat. Res. Soc. Symp. Proc. 482 1998 489-500

Author Title of Article
S. Yamaguchi, M. Kariya, S. Nitta, T. Takeuchi, C. Wetzel. H. Amano and I. Akasaki Observation of photoluminescence from Al1-x,InxN heteroepitaxial films grown by metalorganic vapor phase epitaxy
Journal Volume Year Pages Concerned
Appl. Phys. Lett. 73/6 1998 830-831

Author Title of Article
I. Akasaki Recent Progress in Crystal Growth and Conductivity Control of Widegap Group □ Nitrides
Journal Volume Year Pages Concerned
Proc. Mat. Res. Soc. 1998 Spring Meeting 1998  

Author Title of Article
T. Takeuchi, C. Wetzel, S. Yamaguchi, H. Sakai, H. Amano, I. Akasaki, Y Kaneko, S. Nakagawa, Y. Yamaoka and N. Yamada Determination of piezoelectric fields in GaInN strained quantum wells using the quantum-confined Stark effect
Journal Volume Year Pages Concerned
Appl. Phys. Lett. 73 1998 1691-1693

Author Title of Article
I. Akasaki Recent Progress in Crystal Growth and Conductivity Control of Widegap Group □ Nitrides
Journal Volume Year Pages Concerned
Proc. Mat. Res. Soc. 1998 Spring Meeting 1998  

Author Title of Article
S. Yamaguchi, M. Kariya, S. Nitta, H. Kato, T. Takeuchi, C. Wetzel, H. Amano and I. Akasaki Structural and optical properties of AlInN and AlGaInN on GaN grown by metalorganic vapor phase epitaxy
Journal Volume Year Pages Concerned
Proc. 9th Int. Conf. on Metal Organic Vapor Phase Epitaxy   1998  

Author Title of Article
S. Yamaguchi, M. Kariya, S. Nitta, R. Mizumoto, C. Anbe, S. Ikuta, M. Katsuragawa, T. Wauke, H. Kato, T. Takeuchi, C. Wetzel, H. Amano, and I. Akasaki Crystal growth of lattice matched AlInN to GaN and the relation of strong bandgap bowing to microscopic structure
Journal Volume Year Pages Concerned
Proc. of the 24th Intl. Conf. on the Phys. of Semiconductors   1998  

Author Title of Article
H. Amano, T. Takeuchi, S. Yamaguchi, C. Wetzel, and I. Akasaki Characterization of crystalline quality of GaN on sapphire and ternary alloys on GaN
Journal Volume Year Pages Concerned
Trans. Inst. Electron. Inform. & Commun. Engineers C-II(J81-C-II) 1998 65-71

Author Title of Article
C. Anbe, T. Takeuchi, R. Mizumoto, H. Katoh, S. Yamaguchi, C. Wetzel, H. Amano, I. Akasaki, Y. Kaneko and N. Yamada GaN-based laser diode with focused ion beam-etched mirrors
Journal Volume Year Pages Concerned
Proc. European Materials Research Society Spring Meeting   1998  

Author Title of Article
M. Kariya, S. Nitta, S. Yamaguchi, H. Kato, T. Takeuchi, C. Wetzel, H. Amano and I. Akasaki Structural properties of Al1-xInxN ternary alloys on GaN grown by metalorganic vapor-phase epitaxy
Journal Volume Year Pages Concerned
Jpn. J. Appl. Phys. 37 1998 L697-L699

Author Title of Article
H. Sakai, T. Takeuchi, S. Sota, M. Katsuragawa, M. Komori, H. Amano and I. Akasaki Stimulated emission with the longest wavelength in the blue region from GaInN/GaN multi-quantum well structures
Journal Volume Year Pages Concerned
J. Crystal Growth 189/190 1998 831-836

Author Title of Article
M. Katsuragawa, S. Sota, M. Komori, C. Ambe, T. Takeuchi, H. Sakai, H. Amano and I. Akasaki Themal ionization energy of Si and Mg in AlGaN
Journal Volume Year Pages Concerned
J. Crystal Growth 189/190 1998 528-531

Author Title of Article
T. Takeuchi, S., Sota, H. Sakai, H. Amano, I. Akasaki, Y. Kaneko, S. Nakagawa, Y. Yamaoka, N. Yamada Quantum-confined Stark effect in strained GaInN quantum wells on sapphire(0001)
Journal Volume Year Pages Concerned
J. Crystal Growth 189/190 1998 616-620

Author Title of Article
C. Wetzel, T. Takeuchi, H. Amano and I. Akasaki Valenceband splitting and luminescence Stokes shift in GaInN/GaN thin films and multiple quantum well structures
Journal Volume Year Pages Concerned
J. Crystal Growth 189/190 1998 621-624

Author Title of Article
M. Tabuchi, N. Matsumoto, Y. Takeda, T. Takeuchi, H. Amano and I. Akasaki Crystal quality and surface structure of sapphire and buffer layers on sapphire revealed by crystal truncation rod scattering
Journal Volume Year Pages Concerned
J. Crystal Growth 189/190 1998 291-294

Author Title of Article
C. Pernot, A. Hirano, H. Amano and I. Akasaki Investigation of the Leakage Current in GaN P-N Junctions
Journal Volume Year Pages Concerned
jpn. J. Appl. Phys. 37   L1202-L1204

Author Title of Article
C. Wetzel, T. Takeuchi, S. Yamaguchi, H. Katoh, H. Amano and I. Akasaki Optical bandgap in Gal-xInxN(0
Journal Volume Year Pages Concerned
Appl. Phys. Lett. 73 1998 1994-1996

Author Title of Article
H. Amano, M. Iwaya, T. Kashima, M. Katsuragawa, I. Akasaki, J. Han, S. Hearne, J. A. Floro, E. Chason and J. Figiel Stress and Defect Control in GaN Using Low Temperature Interlayers
Journal Volume Year Pages Concerned
Jpn. J. Appl. Phys 37 1998 L1540-L1542

Author Title of Article
C. Wetzel, H. Amano, I. Akasaki, T. Suski, J. W. Ager, E. R. Weber, E. E. Haller, and B. K. Meyer Localized donors in GaN:spectroscopy using large pressures
Journal Volume Year Pages Concerned
Nitride Semiconductors Eds. F. A. Ponce, S. P. DenBaars, B. K. Meyer, S. Nakamura, and T. Strite, Proc. Mat. Res. Soc. Symp482   1998 489-500

Author Title of Article
C. Wetzel, T. Takeuchi, H. Amano, and I. Akasaki Piezoelectric quantization in GaInN thin films and multiple quantum well structures
Journal Volume Year Pages Concerned
Wide-Bandgap Semiconductors for High Power, High Frequency and High Temperature, Eds. S. DenBaars, J. Palmour, M. Shur, and M. Spencer, Proc. Mat. Res. Soc. Symp. 512 1998 181-186

Author Title of Article
C. Wetzel, H. Amano, I. Akasaki, J. W. Ager III, M. Topf, and B. K. Meyer Correlation of vibrational modes and DX-like centers in GaN:O
Journal Volume Year Pages Concerned
Physica B 273-274 1999 109-112

Author Title of Article
C. Wetzel, T. Takeuchi, H. Amano, and I. Akasaki Piezoelectric level splitting in GaInN/GaN quantum wells
Journal Volume Year Pages Concerned
GaN and Related Alloys Eds. S. J. Pearton, C. Kuo, T. Uenoyama, A. F. Wright, Proc. Mat. Res. Soc. Symp. 537 1999 G3.66

Author Title of Article
C. Wetzel, T. Takeuchi, S. Yamaguchi, H. Katoh, H. Amano, and I. Akasaki Piezoelectric field induced transitions in GaInN/GaN multiple quantum wells
Journal Volume Year Pages Concerned
Blue Laser and Light Emitting Diodes II. eds. K. Onabe, K. Hiramatsu, K. Itaya, Y. Nakano, Tokyo, Japan: Ohmsha, 1998   1999 646-649

Author Title of Article
I. Akasaki Progress and prospects of group III nitride semiconductors
Journal Volume Year Pages Concerned
Blue Laser and Light Emitting Diodes II. eds. K. Onabe, K. Hiramatsu, K. Itaya, Y. Nakano, Tokyo, Japan: Ohmsha, 1998   1999 9-13

Author Title of Article
H. Amano, M. Iwaya, N. Hayashi, T. Kashima, M. Katsuragawa, T. Takeuchi, C. Wetzel, and I. Akasaki Improvement of crystalline quality of GaN, AlGaN and AlN on sapphire using low temperature interlayers
Journal Volume Year Pages Concerned
MRS Internet J. Nitride Semicond. Res. 4S1 1999 G10.1

Author Title of Article
C. Wetzel, T. Takeuchi, H. Kato, H. Amano, and I. Akasaki Piezoelectric effects in GaInN/GaN heterostructures and quantum wells
Journal Volume Year Pages Concerned
Proc. of the 24th Int. Conf. on the Physics of Semiconductors, Jerusalem, Israel, August 2-81998 (World Scientific, Singapore 1999).   1999  

Author Title of Article
S. Yamaguchi, M. Kariya, S. Nitta, R. Mizumoto, C. Anbe, S. Ikuta, M. Katsuragawa, T. Wauke, H. Kato, T. Takeuchi, C. Wetzel, H. Amano, and I. Akasaki Crystal growth of lattice-matched Al1-xInxN to GaN and the relation of strong bandgap bowing to the microscopic structure
Journal Volume Year Pages Concerned
Proc. of the 24TH Int. Conf. on the Physics of Semiconductors, Jerusalem, Israel, August 2-8, 1998. (World Scientific, Singapore 1999).   1999  

Author Title of Article
C. Wetzel, T. Takeuchi, H. Amano, and I. Akasaki Piezoelectric Franz-Keldysh effect in strained GaInN/GaN heterostructures
Journal Volume Year Pages Concerned
J. Appl. Phys 85(7) 1999 3786-3791

Author Title of Article
C. Wetzel, T. Takeuchi, S. Nitta, S. Yamaguchi, H. Amano, and I. Akasaki Optical properties of GaInN/GaN heterostructures and quantum wells
Journal Volume Year Pages Concerned
1998 IEEE Semiconducting and Insulating Materials Conference (Inst. Electrical and Electronics Engineers, Inc. Piscataway 1999)   1999 239-242

Author Title of Article
S. Yamaguchi, M. Kariya, S. Nitta, T. Takeuchi, C. Wetzel, H. Amano, and I. Akasaki Structural and optical properties of Al,SUB>1-xInxN grown by metal organic vapor-phase epitaxy
Journal Volume Year Pages Concerned
Proc. of the 18th Electronic Materials Symposium, Shirahama-shi, Wakayama-Ken, June 30-July 2,1999   1999 73-76

Author Title of Article
C. Pernot, A. Hirano, M. Iwaya, T. Detchprohm, H. Amano and I. Akasaki Low-Intensity Ultraviolet Photodetectors Based on AlGaN
Journal Volume Year Pages Concerned
Jpn. J. Appl. Phys. 38 1999 L487-489

Author Title of Article
T. Takeuchi, T. Detchprohm, M. Yano, M. Yamaguchi, N. Hayashi, M. Iwaya, K. Isomura, K. Kimura, H. Amano, I. Akasaki, Yw. Kaneko, S. Watanabe, Y. Yamaoka, R. Shioda, T. Hidaka, Ys. Kaneko, N. Yamada Fabrication and Characterization of GaN-based Laser Diode Grown on Thick n-AlGaN Contact Layer
Journal Volume Year Pages Concerned
Phys. Stat. Sol. (a) 176 1999 31-35

Author Title of Article
Y. Kaneko, R. Shioda, N. Yamada, T. Takeuchi, H. Amano and I. Akasaki Study on electroluminescence spectrum and waveguide loss of GaInN multiple quantum well lasers
Journal Volume Year Pages Concerned
Phys. Stat. Sol. (a) 176 1999 137-140

Author Title of Article
C. Pernot, A. Hirano, M. Iwaya, T. Detchprohm, H. Amano, and I. Akasaki Improvement of low intensity ultraviolet photodetectors based on AlGaN with low threading dislocation density
Journal Volume Year Pages Concerned
Phys. Stat. Sol. (a) 176 1999 147-151

Author Title of Article
K. Hiramatsu, K. Nishiyama, A. Motogaito, H. Miyake, Y. Iyechika and T. Maeda Recent progress in selective area growth and epitaxial lateral overgrowth of III-nitrides : Effects of reactor pressure in MOVPE growth
Journal Volume Year Pages Concerned
Phys. Stat. Sol. (a) 176 1999 535-543

Author Title of Article
Y. Kawaguchi, S. Nambu, M. Yamaguchi, N. Sawaki, H. Miyake, K. Hiramatsu, K. Tsukamoto, N. Kuwano and K. Oki Influence of ambient gas on the epitaxial lateral overgrowth of GaN by metalorganic vapor phase epitaxy
Journal Volume Year Pages Concerned
Phys. Stat. Sol. (a) 176   561-565

Author Title of Article
S. Watanabe, N. Yamada, Y. Yamada, T. Taguchi, T. Takeuchi, H. Amano and I. Akasaki Spectral study of photoluminescence from GaInN/GaN MQWs using CW and time-resolved measurements
Journal Volume Year Pages Concerned
Phys. Stat. Sol. (b) 216 1999 335-339

Author Title of Article
C. Wetzel, M. Kasumi, T. Detchprohm, T. Takeuchi, H. Amano and I. Akasaki Discrete Stark-like ladder in piezoelectric GaInN/GaN quantum wells
Journal Volume Year Pages Concerned
Phys. Stat. Sol. (b) 216 1999 399-403

Author Title of Article
H. Amano, M. Iwaya, N. Hayashi, T. Kashima, S. Nitta, C. Wetzel and I. Akasaki Control of dislocations and stress in AlGaN on sapphire using a low temperature interlayer
Journal Volume Year Pages Concerned
Phys. Stat. Sol. (b) 216 1999 683-689

Author Title of Article
R. Kimura, Y. Gotoh, T. Matsuzawa and K. Takahashi High purity cubic GaN grown on a AlGaAs buffer layer by molecular beam epitaxy
Journal Volume Year Pages Concerned
Proc. of the 4th Symp. on Atomic-Scale Surface and Interface Dynamics, 2000, Tsukuba 4 2000 301-304

Author Title of Article
M. Iwaya, T. kashima, R. Nakamura, T. Detchprohm, S. Kamiyama, S. Yamaguchi, S. Nitta, M. Kariya, H. Amano, and I. Akasaki Crack-free, thick and high-quality AlxGa1-xN using low-temperature interlayer
Journal Volume Year Pages Concerned
Proc. of the 4th Symp. on Atomic-Scale Surface and Interface Dynamics, 2000, Tsukuba 4 2000 305-309

Author Title of Article
I. Akasaki, S. Kamiyama, T. Detchprohm, T. Takeuchi and H. Amano Growth of crack-free thick AlGaN layer for achievement of single lateral mode operation of GaN-based laser diode
Journal Volume Year Pages Concerned
Proc. of the 4th Symp. on Atomic-Scale Surface and Interface Dynamics, 2000, Tsukuba 4 2000 311-314

Author Title of Article
Y. Takeda, M. Tabuchi, M. Araki, S. Yamaguchi, H. Amano and I. Akasaki Crystalline structure and surface morphology of AlN and GaN as buffer layers for GaN growth on sapphire surface-Atomic scale characterization-
Journal Volume Year Pages Concerned
Proc. of the 4th Symp. on Atomic-Scale Surface and Interface Dynamics, 2000, Tsukuba 4 2000 315-321

Author Title of Article
Y. Takeda, M. Tabuchi, M. Araki, S. Yamaguchi, H. Amano and I. Akasaki Effect of crystalline structure of AlN buffer layers on GaInN/GaN growth -Atomic scale characterization-
Journal Volume Year Pages Concerned
Proc. of the 4th Symp. on Atomic-Scale Surface and Interface Dynamics, 2000, Tsukuba 4 2000 321-324

Author Title of Article
K. Hiramatsu, A. Motogaito, H. Miyake, H, Sone, N. sawaki, J. Christen and I. Akasaki Epitaxial lateral overgrowth of GaN by HVPE using tungsten mask and characterization of their crystalline and optical properties
Journal Volume Year Pages Concerned
Proc. of the 4th Symp. on Atomic-Scale Surface and Interface Dynamics, 2000, Tsukuba 4 2000 325-330

Author Title of Article
S. Nitta, S. Yamaguchi, M. Kariya, M. Iwaya, T. Kashima, R. Nakamura, T. Detchprohm, S. Kamiyama, H. Amano and I. Akasaki Mass transport of GaN and reduction of threading dislocations
Journal Volume Year Pages Concerned
Proc. of the 4th Symp. on Atomic-Scale Surface and Interface Dynamics, 2000, Tsukuba 4 2000 331-336

Author Title of Article
N. Kuwano, K. Horibuchi, K. Hiramatsu, N. Sawaki TEM observation of microstructures in ELO-GaN grown by metalorganic vapor phase epitaxial method : Influences of carrier gas species and geometry of mask
Journal Volume Year Pages Concerned
Proc. of the 4th Symp. on Atomic-Scale Surface and Interface Dynamics, 2000, Tsukuba 4 2000 337-340

Author Title of Article
R. Kimura and K. Takahashi High quality epitaxial growth of h-GaN on Al2O3(0001) and c-GaN on GaAs (100) by molecular beam epitaxy
Journal Volume Year Pages Concerned
Proc. 3rd Int. Symp. on blue laser and light emitting diodes, Berlin (2000).   2000  

Author Title of Article
R. Kimura and K. Takahashi High phase purity cubic-GaN grown on GaAs (100) using AlGaAs buffer layer by molecular beam epitaxy
Journal Volume Year Pages Concerned
Proc. 3rd. German-Japan joint workshop, Physica Status Solidi, Berlin (2000)   2000  

Author Title of Article
R. Kimura, Y. Gotoh, T. Matsuzawa and K. Takahashi High purity cubic GaN grown on a AlGaAs buffer layer by molecular beam epitaxy
Journal Volume Year Pages Concerned
J. Crystal Growth 209 2000 382-386

Author Title of Article
R. Kimura, Y. Gotoh, T. Matsuzawa and K. Takahashi High purity cubic GaN grown on a AlGaAs buffer layer by molecular beam epitaxy
Journal Volume Year Pages Concerned
Proc. of 7th Int. Conf. on Chemical Beam Epitaxy and Related Growth Technique (ICCBE-7; 1999 Tsukuba)   1999 103-104

Author Title of Article
R. Kimura, K. Takahashi A study of initial nucleation mechanism of MBE grown GaN on sapphire
Journal Volume Year Pages Concerned
Proc. 3rd Symp. on Atomic-Scale Surface and Interface Dynamics (1999, Fukuoka)   1999 311-315

Author Title of Article
寒川義裕、桑野範之、沖 憲典、伊藤 智徳 原子間ポテンシャルを用いたInGaAs/(110)InP混晶中に出現するCuAu-I型規則構造形成機構の理論的解析
Journal Volume Year Pages Concerned
日本金属学会誌 63(6) 1999 741-746

Author Title of Article
S. Kamiyama, T. Takeuchi, T. Detchprohm, M. Iwaya, N. Hayashi, K. Isomura, K. Kimura, H. Amano and I. Akasaki Improvement of Far Field Pattern in Nitride Laser Diodes using Crack-free Thick n-AlGaN Cladding layer
Journal Volume Year Pages Concerned
Proc. 16th meeting of JSPS 162nd Research Committee, July 27, 1999, Tsukuba   1999 9-13

Author Title of Article
S. Kamiyama, T. Takeuchi, T. Detchprohm, M. Iwaya, N. Hayashi, K. Isomura, K. Kimura, T. Sato, H. Amano, I. Akasaki, Yw. Kaneko, and N. Yamada GaN-based semiconductor laser with stable single transverse-mode operation
Journal Volume Year Pages Concerned
Proc. 2nd Japan-Korea Joint Workshop on Short-Wavelength Semiconductor Optoelectronic Device and Materials, Sep. 30-Oct. 2, 1999, Chiba   1999  

Author Title of Article
S. Kamiyama, M. Iwaya, H. Amano and I. Akasaki Performance of GaN-Based Semiconductor Laser with Spectral Broadening due to Compositional Inhomogeneity in GaInN Active Layer
Journal Volume Year Pages Concerned
Jpn. J. Appl. Phys. 39 2000 390-392

Author Title of Article
上山 智,佐藤敏幸、岩谷素顕、天野 浩、赤崎 勇 単一横モード型GaN系半導体レーザ
Journal Volume Year Pages Concerned
オプトロニクス No.1 2000 68-73

Author Title of Article
H. Sone, S. Nambu, Y. Kawaguchi, M. Yamaguchi, H. Miyake, K. Hiramatsu, Y. Iyechika, T. Maeda and N. Sawaki Optical and crystalline properties of epitaxial-lateral-overgrown-GaN using tungsten mask by hydride vapor phase epitaxy
Journal Volume Year Pages Concerned
Jpn. J. Appl. Phys. 38/4A 1999 L356-359

Author Title of Article
K. Hiramatsu, H. Matsushima, T. Shibata, Y. Kawaguchi, and N. Sawaki Selective area growth and epitaxial lateral overgrowth of GaN by metalorganic vapor phase epitaxy and hydride vapor phase epitaxy
Journal Volume Year Pages Concerned
Mater. Sci. & Eng. B59 1999 104-111

Author Title of Article
C. Ambe, T. Takeuchi, R. Mizumoto, H. Katoh, S. Yamaguchi, C. Wetzel, H. Amano, I. Akaskai, Y. Kaneko and N. Yamada GaN-based laser diode with focused ion beam etched mirrors
Journal Volume Year Pages Concerned
Mater. Sci. Eng. B59 1999 382-385

Author Title of Article
Y. Kawaguchi, S. Nambu, H. Sone, M. Yamaguchi, H. Miyake, K. Hiramatsu, N. Sawaki, Y. Iyechika and T. Maeda Selective area growth (SAG) and epitaxial lateral overgrowth (ELO) of GaN using tungsten mask
Journal Volume Year Pages Concerned
Proc. Mat. Res. Soc. Symp. 537 1999 G4.1

Author Title of Article
H. Miyake, A. Motogaito and K. Hiramatsu Effects of reactor pressure on epitaxial lateral overgrowth of GaN via low-pressure metalorganic vapor phase epitaxy
Journal Volume Year Pages Concerned
Jpn. J. Appl. Phys. 38 9A/B 1999 L1000-L1002

Author Title of Article
Y. Honda, Y. Iyechika, T. Maeda, H. Miyake, K. Hiramatsu, H. Sone and N. Sawaki Crystal orientation fluctuation of epitaxial-lateral-overgrown GaN with W mask and SiO2 mask observed by transmission electron diffraction and X-ray rocking curves
Journal Volume Year Pages Concerned
Jpn. J. Appl. Phys. 38 11B 1999 L1299-1302

Author Title of Article
S. Yamaguchi, M. Kariya, S. Nitta, T. Takeuchi, C. Wetzel, H. Amano, and I. Akasaki Structural properties of InN on GaN grown by metalorganic vapor phase epitaxy
Journal Volume Year Pages Concerned
J. Appl. Phys. 85 1999 7682-7688

Author Title of Article
M. Kariya, S. Nitta, S. Yamaguchi, T. Kashima, H. Katoh, H. Amano, and I. Akasaki Structural characterization of Al1-xInxN lattice-matched to GaN
Journal Volume Year Pages Concerned
J. Crystal Growth 209 1999 419-423

Author Title of Article
S. Yamaguchi, M. Kariya, S. Nitta, H. Amano and I. Akasaki Improvement of structural and optical properties of GaN and AlGaN using isoelectronic In doping
Journal Volume Year Pages Concerned
to be published in Inst. Int. Conf. Ser.   2000  

Author Title of Article
M. Kariya, S. Nitta, S. Yamaguchi, H. Amano, and I. Akasaki Mosaic Structure of Ternary Al1-xInxN Films on GaN Grown by Metalorganic Vapor Phase Epitaxy
Journal Volume Year Pages Concerned
Jpn. J. Appl. Phys. 38 1999 L984-L986

Author Title of Article
S. Yamaguchi, M. Kariya, S. Nitta, H. Amano, and I. Akasaki The Effect of Isoelectronic In-Doping on the Structural and Optical Properties of (Al)GaN Grown by Metal Organic Vapor Phase Epitaxy
Journal Volume Year Pages Concerned
Jpn. J. Appl. Phys. 39 1999 L143-145

Author Title of Article
S. Yamaguchi, M. Kariya, S. Nitta, H. Amano, and I. Akasaki Strain relief by In-doping and its effect on the surface and the interface structures in (Al)GaN on sapphire grown by metalorganic vapor phase epitaxy
Journal Volume Year Pages Concerned
to be published in Appl. Surf. Sci.   1999  

Author Title of Article
S. Yamaguchi, M. Kariya, S. Nitta, H. Amano, and I. Akasaki Anomalous Features in Optical Properties of Al1-xInxN on GaN Grown by Metalorganic Vapor Phase Epitaxy
Journal Volume Year Pages Concerned
Appl. Phys. Lett 76 1999 876-878

Author Title of Article
S. Yamaguchi, M. Kariya, S. Nitta, H. Amano, and I. Akasak Strain Relief and Its Effect on the Properties of GaN Using Isoelectronic In Doping Grown by Metalorganic Vapor Phase Epitaxy
Journal Volume Year Pages Concerned
Appl. Phys. Lett. 75 1999 4106-4108

Author Title of Article
M. Kariya, S. Nitta, M. Kosaki, Y. Yukawa, S. Yamaguchi, H. Amano, and I. Akasaki Effect on GaN/Al0.17Ga0.83N and Al0.05Ga0.83N/Al0.17Ga0.83N Quantum Wells by Isoelectronic In-Doping During Metalorganic Vapor Phase Epitaxy
Journal Volume Year Pages Concerned
Jpn. J. Appl. Phys. 39 2000 L143-145

Author Title of Article
N. Faleev, K. Pavlov, M. Tabuchi and Y. Takeda Influence of long-range lateral ordering in structures with quantum dots in the spatial distribution of diffracted X-ray radiation
Journal Volume Year Pages Concerned
Jpn. J. Appl. Phys. 38 1999 818-821

Author Title of Article
K. Pavlov, N. Faleev, M. Tabuchi and Y. Takeda Specific aspects of X-ray diffraction on statistically disordered QDs in perfect crystal matrix
Journal Volume Year Pages Concerned
Jpn. J. Appl. Phys. 38,Suppl.38-1 1999 269-272

Author Title of Article
N. Faleev, K. Pavlov, M. Tabuchi and Y. Takeda CTR and DCXRD studies of lateral ordering of quantum dots in multilayer periodic structures
Journal Volume Year Pages Concerned
Jpn. J. Appl. Phys. 38,Suppl.38-1 1999 277-280

Author Title of Article
M. Tabuchi, Y. Takeda, N. Matsumoto, H. Amano and I. Akasaki X-ray interference and crystal truncation rod observation of GaN and GaInN layers grown on sapphire with AlN buffer layer
Journal Volume Year Pages Concerned
Jpn. J. Appl. Phys. 38,Suppl.38-1 1999 281-284

Author Title of Article
N. N. Faleev, A. Yu Egorov, A. E. Zhukov, A. R. Kovsh, S. S. Mikhrin, V. M. Ustinov, K. M. Pavlov, V. I. Punegov, M. Tabuchi and Y. Takeda X-ray diffraction analysis of multilayer InAs-GaAs hetereostructures with InAs qunatum dots
Journal Volume Year Pages Concerned
Semiconductors 33 1999 1229-1237

Author Title of Article
田渕雅夫、平山啓介、竹田美和 X線反射率測定によるIII族窒化物半導体の表面構造解析
Journal Volume Year Pages Concerned
X線回折研究のあゆみ 20 1999 21-24

Author Title of Article
田渕雅夫、竹田美和 X線CTR散乱とX線反射率測定によるIII族窒化物半導体の構造解析
Journal Volume Year Pages Concerned
理学電機ジャーナル 30 1999 40-45

Author Title of Article
C. Wetzel and I. Akasaki O, C and other unintentional impurities in GaN and related compounds
Journal Volume Year Pages Concerned
Properties, Synthesis, Characterization, and Applications of Gallium Nitride and related Compounds Eds. J. Edgar, T. S. Strite, I. Akasaki, H. Amano and C. Wetzel (INSPEC, IEE, London, UK, 1999) 23 1999 284

Author Title of Article
C. Wetzel and I. Akasaki Raman and IR studies of InN
Journal Volume Year Pages Concerned
Properties, Synthesis, Characterization, and Applications of Gallium Nitride and related Compounds Eds. J. Edgar, T. S. Strite, I. Akasaki, H. Amano and C. Wetzel (INSPEC, IEE, London, UK, 1999) 23 1999 121

Author Title of Article
C. Wetzel and I. Akasaki Raman and IR studies of GaN
Journal Volume Year Pages Concerned
Properties, Synthesis, Characterization, and Applications of Gallium Nitride and related Compounds Eds. J. Edgar, T. S. Strite, I. Akasaki, H. Amano and C. Wetzel(INSPEC, IEE, London, UK, 1999) 23 1999 52

Author Title of Article
C. Wetzel and I. Akasaki Raman and IR studies of AlGaN
Journal Volume Year Pages Concerned
Properties, Synthesis, Characterization, and Applications of Gallium Nitride and related Compounds Eds. J. Edgar, T. S. Strite, I. Akasaki, H. Amano and C. Wetzel(INSPEC, IEE, London, UK, 1999) 23 1999 143

Author Title of Article
N. Kuwano HRTEM characterization of GaN films on GaAs Properties, Processing and Application of Gallium Nitride and Related Semiconductors
Journal Volume Year Pages Concerned
Properties, Synthesis, Characterization, and Applications of Gallium Nitride and related Compounds Eds. J. Edgar, T. S. Strite, I. Akasaki, H. Amano and C. Wetzel(INSPEC, IEE, London, UK, 1999) 23 1999 243-247

Author Title of Article
Y. Takeda and M. Tabuchi Sapphire substrates for growth of GaN and related compounds
Journal Volume Year Pages Concerned
Properties, Processing and Applications of Gallium Nitride and Related Semiconductors(EMIS Datareviews Series No. 23)Eds. J. H. Edgar, S. Strite, I. Akasaki, H. Amano and C. Wetzel (INSPEC, London, 1999) 23 1999 381-385

Author Title of Article
H. Amano and I. Akasaki Optical properties of AlGaN
Journal Volume Year Pages Concerned
Properties, Processing and Applications of Gallium Nitride and Related Semiconductors(EMIS Datareviews Series No. 23)Eds. J. H. Edgar, S. Strite, I. Akasaki, H. Amano and C. Wetzel (INSPEC, London, 1999) 23 1999 139-142

Author Title of Article
H. Amano and I. Akasaki X-ray diffraction characterization of GaN-based materials: triple axis diffractometry
Journal Volume Year Pages Concerned
Properties, Processing and Applications of Gallium Nitride and Related Semiconductors(EMIS Datareviews Series No. 23)Eds. J. H. Edgar, S. Strite, I. Akasaki, H. Amano and C. Wetzel (INSPEC, London, 1999) 23 1999 264-272

Author Title of Article
T. Takeuchi and I. Akasaki GaInN quantum wells: piezoelectricity
Journal Volume Year Pages Concerned
Properties, Processing and Applications of Gallium Nitride and Related Semiconductors(EMIS Datareviews Series No.23)Eds. J. H. Edgar, S. Strite, I. Akasaki, H. Amano and C. Wetzel (INSPEC, London, 1999) 23 1999 525

Author Title of Article
桑野 範之 エピタキシャル層の構造と組織
Journal Volume Year Pages Concerned
III族窒化物半導体 赤崎勇編著、培風館   1999 217-238

Author Title of Article
天野 浩、赤崎 勇 第3章III族窒化物半導体の光学的・電気的特性
Journal Volume Year Pages Concerned
“III族窒化物半導体"、アドバンストエレクトロニクスシリーズ、培風館、赤崎勇編著   1999 34-61

Author Title of Article
天野 浩、赤崎 勇 第8章 有機金属化合物気相成長(MOVPE)
Journal Volume Year Pages Concerned
“III族窒化物半導体"、アドバンストエレクトロニクスシリーズ、培風館、赤崎勇編著   1999 147-164

Author Title of Article
天野 浩 第15章 受光デバイス
Journal Volume Year Pages Concerned
“III族窒化物半導体"、アドバンストエレクトロニクスシリーズ、培風館、赤崎勇編著   1999 275-283

Author Title of Article
天野 浩 第16章 電子デバイス
Journal Volume Year Pages Concerned
“III族窒化物半導体"、アドバンストエレクトロニクスシリーズ、培風館、赤崎勇編著   1999 285-293

Author Title of Article
天野 浩,赤崎 勇 サファイア基板上□族窒化物半導体成長における低温堆積層の効果と構造
Journal Volume Year Pages Concerned
応用物理 68 1999 65-71

Author Title of Article
T. Takeuchi, T. Detchprohm, M. Iwaya, N. Hayashi, K. Isomura, K. Kimura, M. Yamaguchi, H. Amano, I. Akasaki, Yw. Kaneko, R. Shioda, S. Watanabe, T. Hidaka, Y. Yamaoka, Ys. Kaneko and N. Yamada Improvement of far-field pattern in nitride laser diodes
Journal Volume Year Pages Concerned
Appl. Phys. Lett 75 1999 2960-2962

Author Title of Article
T. Kashima, R. Nakamura, M. Iwaya, H. Katoh, S. Yamaguchi, H. Amano, and I. Akasaki Microscopic Investigation of Al0.43Ga0.57N on Sapphire
Journal Volume Year Pages Concerned
Jpn. J. Appl. Phys. 38 1999 L363-365

Author Title of Article
D. M. Hofmann, B. K. Meyer, F. Leiter, W. von Forster, H. Alves, N. Romanov, H. Amano and I. Akasaki Optical Transitions of the Mg Acceptor in GaN
Journal Volume Year Pages Concerned
Jpn. J. Appl. Phys. 38 1999 L1422-1424

Author Title of Article
G. Steude, B. K. Meyer, A. Goldner, A. Hoffmann, A. Kaschner, F. Bechstedt, H. Amano and I. Akasaki Strain Modification of GaN in AlGaN/GaN Epitaxial Films
Journal Volume Year Pages Concerned
Jpn. J. Appl. Phys. 38 1999 L498-500

Author Title of Article
T. Takeuchi, H. Amano and I. Akasaki Theoretical study of orientational dependence of piezoelectric effects in wurtzite strained GaIn/GaN heterostructures and quantum wells
Journal Volume Year Pages Concerned
Jpn. J. Appl. Phys. 39 1999 L390-392

Author Title of Article
S. Yamaguchi, M. Kariya, S. Nitta, H. Amano and I. Akasaki The effect of isoelectronic In-doping on the structural and optical properties of(Al)GaN
Journal Volume Year Pages Concerned
Ext. Abst. 1999 Int. Conf. SSDM   1999 52-53

Author Title of Article
C. Wetzel, H. Amano and I. Akasaki Piezoelectric polarization effects in GaInN/GaN heterostructures and some consequences for device design
Journal Volume Year Pages Concerned
Ext. Abst. 1999 Int. Conf. SSDM   1999  

Author Title of Article
C. Wetzel, T. Takeuchi, S. Yamaguchi, H. Amano and I. Akasaki Spectroscopy of piezoelectric effects in GaInN/GaN quantum well structures and devices
Journal Volume Year Pages Concerned
Bull. Am. Phys. Soc. 44 1999 1337

Author Title of Article
C. Wetzel, T. Takeuchi, M. Iwaya, M. Kasumi, H. Amano and I. Akasaki In-situ spectroscopic ellipsometry of GaN and AlGaInN growth by MOVPE
Journal Volume Year Pages Concerned
Bull. Am. Phys. Soc. 44 1999 314

Author Title of Article
A. Watanabe, H. Takahashi, T. Tanaka, H. Ota, K. Chikuma, H. Amano and I. Akasaki Correlation between dislocation density and the macroscopic properties of GaN grown by metalorganic vapor phase epitaxy
Journal Volume Year Pages Concerned
Jpn. J. Appl. Phys.   1999 L1159-L1162

Author Title of Article
C. Wetzel, T. Takeuchi, H. Amano, and I. Akasaki Electric-field strength, polarization dipole, and multi-interface band offset n piezoelectric Ga1-xInxN/GaN quantum-well structures
Journal Volume Year Pages Concerned
The American Physical Society 61 1999 2159-2163

Author Title of Article
M. Kariya, S. Nitta, M. Kosaki, Y. Yukawa, S. Yamaguchi, H. Amno and I. Akasaki Effect on GaN/Al0.17Ga0.83N and Al0.05Ga0.95N/Al0.17Ga0.83N Quantum Wells by Isoelectronic In-Doping during Metalorganic Vapor PhaseEpitaxy
Journal Volume Year Pages Concerned
Jpn. J. Appl. Phys. 39(2/2B) 2000 L143-L145

Author Title of Article
S. Kamiyama, M. Iwaya, H. Amano and I. Akasaki Performance of GaN-Based Semiconductor Laser with Spectral Broadening due to Compositional Inhomogeneity in GaInN Active Layer
Journal Volume Year Pages Concerned
Jpn. J. Appl. Phys. 39 2000 L390-L392

Author Title of Article
T. Takeuchi, H. Amano and I. Akasaki Theoretical Study of Orientation Dependence of Piezoelectric Effects in Wurtzite Strained GaInN/GaN Heterostructures and Quantum Wells
Journal Volume Year Pages Concerned
Jpn. J. Appl. Phys. 39 2000 L413-L416

Author Title of Article
S. Yamaguchi, M. Kariya, S. Nitta, T. Takeuchi, C. Wetzel, H. Amano and I. Akasaki Anomalous features in the optical properties of Al1-xInxN on GaN grown by metal organic vapor phase epitaxy
Journal Volume Year Pages Concerned
Appl. Phys. Lett. 76(7) 2000 876-878

Author Title of Article
Y. Takeda, M. Tabuchi, H. Amano, and I. Akasaki Characterization of Group-III Nitride Semiconductors by X-Ray CTR Scattering and Reflectivity Measurements
Journal Volume Year Pages Concerned
The Rigaku Journal 17(2) 2000 54-59

Author Title of Article
M. Kariya, S. Nitta, S. Yamguchi, T. Kashima, H. Kato, H. Amano, and I. Akasaki Structural characterization of Al1-xInxN lattice-matched to GaN
Journal Volume Year Pages Concerned
J. Crystal Growth 209 2000 419-423

Author Title of Article
S. Nitta S. Yamaguchi, M. Kariya, M. Iwaya, T. Kashima, R. Nakamura, T. Detchprohm, S. Kamiyama, H. Amano, and I. Akasaki Mass transport of GaN and reduction of threading dislocations
Journal Volume Year Pages Concerned
Proceedings of the Fourth Symposium on Atomic-scale Surface and Interface Dynamics   2000 331-335

Author Title of Article
C. Wetzel, H. Amano, I. Akasaki, J. W. Ager III, I. Grzegory, M. Topf and B. K. Meyer Localized vibrational modes in GaN:O tracing the formation of oxygen Dx-like centers under hydrostatic pressure
Journal Volume Year Pages Concerned
Physical Review B 61(12) 2000 8202-8206

Author Title of Article
田淵 雅夫, 竹田 美和, 竹内 哲也, 天野 浩, 赤崎 勇 X線CTR散乱法およびX線反射率測定で見たサファイア基板上の窒化物成長過程(Characterization of Initial Growth Stage of GaInN Multilayered Structure by X-ray CTR Scattering and X-ray Reflectivity Method)
Journal Volume Year Pages Concerned
表面科学 21/3 2000 162-168

Author Title of Article
C. Wetzel, T. Detchprohm, T. Takeuchi, H. Amano, and I. Akasaki Piezoelectric Polarization in the Radiative Centers of GaInN/GaN Quantum Wells and Devices
Journal Volume Year Pages Concerned
J. Electronic Materials 29/3 2000  

Author Title of Article
天野 浩、赤崎 勇 サファイア基板上III族窒化物半導体成長における低温堆積層(Effect of Low-temperature Deposited Layer on the Growth of Group-III Nitrides on Sapphire)
Journal Volume Year Pages Concerned
表面科学 21/3 2000 126-133

Author Title of Article
M. Tabuchi, K. Hirayama, Y. Takeda, T. Takeuchi, H. Amano, I. Akasaki Characterization of initial growth stage of GaInN multi-layered structure by X-ray CTR scattering method
Journal Volume Year Pages Concerned
Applied Surface Science 159/160 2000 432-440

Author Title of Article
N. Hayashi, S. Kamiyama, T. Takeuchi, M. Iwaya, H. Amano, I. Akasaki, S. Watanabe, Y. Kaneko and N. Yamada Electrical conductivity of low temperature deposited Al0.1Ga0.9N interlayer
Journal Volume Year Pages Concerned
Jpn. J. Appl. Phys   2000  

Author Title of Article
T. Detchprohm, M. Yano, S. Sano, R. Nakamura, S. Mochiduki, T. Nakamura, H. Amano, and I. Akasaki Heteroepitaxial Lateral Overgrowth of GaN on Periodically Grooved Substrates: A New Approach for Growing Low-Dislocation-Density GaN Single Crystal
Journal Volume Year Pages Concerned
Accepted for publication in Jpn. J. App. Phys. Lett   2000  

Author Title of Article
Isamu Akasaki The Evolution of Group □ nitride semiconductors Seeking blue light emission
Journal Volume Year Pages Concerned
Mater Sci. Eng B74 2000 101-106

Author Title of Article
T. Sato, M. Iwaya, K. Isomura, T. Ukaki, S. Kamiyama, H. Amano and I. Akasaki Theoretical Analysis of Optical Transverse-Mode Control on GaN-Based Laser Diodes
Journal Volume Year Pages Concerned
IEICE TRANS. Electron E83-C/4 2000  

Author Title of Article
C. Wetzel, H. Amano, and I. Akasaki Piezoelectric Polarization in GaInN/GaN Heterostructures and Some Consequences for Devices Design
Journal Volume Year Pages Concerned
Jpn. J. Appl. Phys 39 2000 2425-2427

Author Title of Article
S. Yamaguchi, M. Kariya, S. Nitta, H. Amano, and I. Akasaki The Effect of Isoelectronic In-Doping on the Structural and Optical Properties of (Al)GaN Grown by Metalorganic Vapor Phase Epitaxy
Journal Volume Year Pages Concerned
Jpn. J. Appl. Phys 39(1/4B) 2000 2385-2388

Author Title of Article
C. Pernot, A. Hirano, M. Iwaya, T. Detchprohm, H. Amano and I. Akasaki Solar-Blind UV Photodetectors Based on GaN/AlGaN p-i-n Photodiodes
Journal Volume Year Pages Concerned
Jpn. J. Appl. Phys. 39(2/5A) 2000 L387-L389

Author Title of Article
Hirano, C. Pernot, M. Iwaya, T. Detchprohm, H. Amamo, and I. Akasaki Demonstration of solar-blind AlxGa1-xN flame detector
Journal Volume Year Pages Concerned
IGRC2001 Proceedings International Gas Research Conference   2000  

Author Title of Article
I. Akasaki Progress in Crystal Growth of Nitride Semiconductors
Journal Volume Year Pages Concerned
10th International Conference on Metalorganic Vapor Phase Epitaxy   2000 33-34

Author Title of Article
S. Yamaguchi, M. Kariya, S. Nitta, M. Kosaki, Y. Yukawa, H. Amano, and I. Akasaki Control of Crystalline Quality of MOVPE-grown GaN and (Al, Ga)N/AlGaN MQW using In-doping and /or N2 carrier gas
Journal Volume Year Pages Concerned
10th International Conference on Metalorganic Vapor Phase Epitaxy   2000 337-338

Author Title of Article
M. Iwaya, S. Terao, N. Hayashi, T. Kashima, T. Dechprohm, H. Amano, I. Akasaki, A. Hirano, and C. Pernot High-Quality AlxGa1-xN using Low Temperature-Interlayer and Its Application to UV Detector
Journal Volume Year Pages Concerned
Mat. Res. Soc. Symp. 595 2000 W110.1-W110.6

Author Title of Article
H. Miyake, M. Yamaguchi, M. Haino, A. Motogaito, K. Hiramatsu, S. Nambu, Y. Kawaguchi, N. Sawaki, Y. Iyechika, T. Maeda, and I. Akasaki Fabrication of GaN with Buried Tungsten (W) Structures Using Epitaxial Lateral Overgrowth (ELO) via LP-MOVPE
Journal Volume Year Pages Concerned
Mat. Res. Soc. Symp 595 2000 W2.3.1-W2.3.6

Author Title of Article
S. Nitta, T. Kashima, M. Kariya, Y. Yukawa, S. Yamaguchi, H. Amano, and I. Akasaki Mass Transport, Faceting and Behavior of Dislocations in GaN
Journal Volume Year Pages Concerned
Mat. Res. Soc. Symp 595 2000 W2.8.1-W2.8.6

Author Title of Article
I. Akasaki, S. Kamiyama, T. Detchprohm, T. Takeuchi, and H. Amano Growth of Crack-Free Thick AlGaN Layer and Its Application to GaN-Based Laser Diode
Journal Volume Year Pages Concerned
Mat. Res. Soc. Symp. 595 2000 W6.8.1-W6.8.6

Author Title of Article
C. Wetzel, T. Takeuchi, H. Amano, and I. Akasaki Spectroscopy in Polarized and Piezoelectric AlGaInN Heterostructures
Journal Volume Year Pages Concerned
Mat. Res. Soc. Symp 595 2000 W12.4.1-W12.4.12

Author Title of Article
M. Iwaya, S. Terao, N. Hayashi, T. Kashima, H. Amano, and I. Akasaki Realization of crack-free and high-quality thick AlxGa1-xN for UV optoelectronics using low-temperature interlayer
Journal Volume Year Pages Concerned
Applied Surface Science 159-160 2000 405-413

Author Title of Article
S. Yamaguchi, M. Kariya, S. Nitta, H. Amano, and I. Akasaki Strain relief by In-doping and its effect on the surface and on the interface structures in (Al)GaN on sapphire grown by metalorganic vapor-phase epitaxy
Journal Volume Year Pages Concerned
Applied Surface Science 159-160 2000 414-420

Author Title of Article
S. Nitta, M. Kariya, T. Kashima, S. Yamaguchi, H. Amano, and I. Akasaki Mass transport and the reduction of threading dislocation in GaN
Journal Volume Year Pages Concerned
Applied Surface Science 159-160 2000 421-426

Author Title of Article
T. Takeuchi, S. Lester, Bassile, G. Girolami, R. Twist, F. Mertz, M. Wong, R. Schneider, H. Amano, and I. Akasaki Polarization control in nitride-based semiconductors
Journal Volume Year Pages Concerned
Proc. Int. Workshop on Nitride Semiconductors, IWN2000, Nagoya, Japan (IPAP, Tokyo, 2000)   2000 137-140

Author Title of Article
S. Yamaguchi, M. Kariya, M. Kosaki, Y. Yukawa, S. Nitta, H. Amano and I. Akasaki Effect of carrier gas on the properties of MOVPE-grown GaN and GaN/AlGaN MQWs:a comparison of H2 to N2 as a carrier gas
Journal Volume Year Pages Concerned
Proc. Int. Workshop on Nitride Semiconductors, IWN2000, Nagoya, Japan (IPAP, Tokyo, 2000)   2000 141-143

Author Title of Article
M. Yano, T. Detchprohm, R. Nakamura, S. Sano, H. Amano, and I. Akasaki Heteroepitaxy and characterization of GaN with Low Dislocation Density on Periodically Grooved Sapphire Substrate
Journal Volume Year Pages Concerned
Proc. Int. Workshop on Nitride Semiconductors, IWN2000, Nagoya, Japan (IPAP, Tokyo, 2000)   2000 292-295

Author Title of Article
S. Nitta, Y. Yukawa, M. Kosaki, M. Iwaya, S. Yamaguchi, H. Amano, and I. Akasaki Dynamical process of mass transport in GaN
Journal Volume Year Pages Concerned
Proc. Int. Workshop on Nitride Semiconductors, IWN2000, Nagoya, Japan (IPAP, Tokyo, 2000)   2000 328-330

Author Title of Article
C. Wetzel, S. Kamiyama, H. Amano, and I. Akasaki Excitation spectroscopy and level assignment in piezoelectric Ga1-xInxN/GaN quantum wells
Journal Volume Year Pages Concerned
Proc. Int. Workshop on Nitride Semiconductors, IWN2000, Nagoya, Japan (IPAP, Tokyo, 2000)   2000 510-515

Author Title of Article
S. Terao, M. Iwaya, R. Nakamura, S. Kamiyama, H. Amano, and I. Akasaki Effect of impurity doping on the mechanical properties of AlxGa1-xN ternary alloys
Journal Volume Year Pages Concerned
Proc. Int. Workshop on Nitride Semiconductors, IWN2000, Nagoya, Japan (IPAP, Tokyo, 2000)   2000 640-643

Author Title of Article
M. Iwaya, R. Nakamura, S. Terao, T. Ukai, S. Kamiyama, H. Amano and I. Akasaki High-efficiency GaN/AlxGa1-xN multi-quantum well light emitter grown on low-dislocation density AlxGa1-xN
Journal Volume Year Pages Concerned
Proc. Int. Workshop on Nitride Semiconductors, IWN2000, Nagoya, Japan (IPAP, Tokyo, 2000)   2000 833-836

Author Title of Article
W. W. Chow, H. Amano and I. Akasaki On the feasibility of fundamental-mode operation in unstable-resonator InGaN lasers
Journal Volume Year Pages Concerned
Proc. Int. Workshop on Nitride Semiconductors, IWN2000, Nagoya, Japan (IPAP, Tokyo, 2000)   2000 895-898

Author Title of Article
R. Mouillet, C. Pernot, Hirano, M. Iwaya, T. Detchprohm, H. Amano, and I. Akasaki Optical Property of an AlGaN/GaN Hetero-Bipolar-Phototransistor
Journal Volume Year Pages Concerned
Proc. Int. Workshop on Nitride Semiconductors, IWN2000, Nagoya, Japan (IPAP, Tokyo, 2000)   2000 973-976

Author Title of Article
A. Hirano, C. Pernot, M. Iwaya, T. Detchprohm, H. Amano, and I. Akasaki Solar-Blind AlGaN PIN Hetero Junction Photodiode
Journal Volume Year Pages Concerned
Proc. Int. Workshop on Nitride Semiconductors, IWN2000, Nagoya, Japan (IPAP, Tokyo, 2000)   2000 911-914

Author Title of Article
S. Yamaguchi, M. Kariya, S. Nitta, H. Amano, I. Akasaki The Effect of Isoelectronic In-Doping on the Structural and Optical Properties of (Al) GaN Grown by Metal Organic Vapor Phase Epitaxy
Journal Volume Year Pages Concerned
SOLID STATE DEVICES AND MATERIALS   2000 52-53

Author Title of Article
I. Akasaki Renaissance and Progress in Research on Nitride Semiconductors
Journal Volume Year Pages Concerned
Proceedings of The 19th Symposium on Materials Science and Engineering Research Center of Ion Beam Technology Hosei University   2000  

Author Title of Article
M Iwaya, S. Terao, N. Hayashi, T. Kashima, T. Detchprohm, H. Amano, I. Akasaki, A. Hirano, and C. Pernot High-quality AlxGa1-xN using low temperature-interlayer and its application to UV detector
Journal Volume Year Pages Concerned
Mat. Res. Soc. Symp. 595 2000 W1.10.1-W1.10.6

Author Title of Article
Y. Takeda, M. Tabuchi, H. Amano, and I. Akasaki Characterization of Group-III Nitride Semiconductors by X-Ray CTR Scattering and Reflectivity Measurements
Journal Volume Year Pages Concerned
The Rigaku Journal 17(20) 2000  

Author Title of Article
I. Akasaki Progress in crystal growth of nitride semiconductors
Journal Volume Year Pages Concerned
Journal of Crystal Growth 221 2000 231-239

Author Title of Article
S. Yamaguchi, M. Kariya, S. Nitta, T. Kashima, M. Kosaki, Y. Yukawa, H. Amano, I. Akasaki Control of crystalline quality of MOVPE-grown GaN and(Al, Ga)N/AlGaN MQW using In-doping and/or N2 carrier gas
Journal Volume Year Pages Concerned
Journal of Crystal Growth 221 2000 327-333

Author Title of Article
I. Akasaki Renaissance and Progress in Nitride Semiconductors
Journal Volume Year Pages Concerned
Proc. Int. Workshop on Nitride Semiconductors IPAP Conf. Series 1   2001 1-6

Author Title of Article
S. Yamaguchi, M. Kariya, M. Kosaki, Y. Yukawa, S. Nitta, H. Amano, and I. Akasaki Effect of carrier gas on the properties of MOVPE-grown GaN and GaN/AlGaN MQWs: a comparison of H2 to N2 as a carrier gas
Journal Volume Year Pages Concerned
Proc. Int. Workshop on Nitride Semiconductors IPAP Conf. Series 1   2001 141-143

Author Title of Article
M. Yano, T. Detchprohm, R. Nakamura, S. Sano, S. Mochizuki, T. Nakamura, H. Amano and I. Akasaki Heteroepitaxy and characterization of GaN with low dislocation density on periodically grooved sapphire substrate
Journal Volume Year Pages Concerned
Proc. Int. Workshop on Nitride Semiconductors IPAP Conf. Series 1   2001 292-295

Author Title of Article
S. Nitta, Y. Yukawa, M. Kosaki, M. Iwaya, S. Yamaguchi, H. Amano and I. Akasaki Dynamical Process of Mass Transport in GaN
Journal Volume Year Pages Concerned
Proc. Int. Workshop on Nitride Semiconductors IPAP Conf. Series 1   2001 328-330

Author Title of Article
S. Terao, M. Iwaya, R. Nakamura, S. Kamiyama, H. Amano, I. Akasaki Effect of Impurity Doping on the Mechanical Properties of AlxGa1-xN Ternary Alloys
Journal Volume Year Pages Concerned
Proc. Int. Workshop on Nitride Semiconductors IPAP Conf. Series 1   2001 640-643

Author Title of Article
M. Iwaya, R. Nakamura, S. Terao, T. Ukai, S. Kamiyama, H. Amano, and I. Akasaki High-Efficiency GaN/AlxGa1-xN Multi-Quantum Well Light Emitter Grown on Low-Dislocation Density AlxGa1-xN
Journal Volume Year Pages Concerned
Proc. Int. Workshop on Nitride Semiconductors IPAP Conf. Series 1   2001 833-836

Author Title of Article
T. Detchprohm, M. Yano, S. Sano, R. Nakamura, S. Mochizuki, T. Nakamura, H. Amano, and I. Akasaki Heteroepitaxial Lateral Overgrowth of GaN on Periodically Grooved Substrates: A New Approach for Growing Low-Dislocation-Density GaN Single Crystals
Journal Volume Year Pages Concerned
Jpn. J. Appl. Phys. 20(2/1A/B) 2001  

Author Title of Article
M. Iwaya, S. Terao, S. Kamiyama, H. Amano, and I. Akasaki Defect and stress control of AlxGa1-xN and fabrication of high-efficiency UV-LED
Journal Volume Year Pages Concerned
Proc. of the Fifth Symposium on Atomic-scale Surface and Interface Dynamics   2001 77-78

Author Title of Article
S. Yamaguchi, M. Kariya, M. Kosaki, Y. Yukawa, S. Mochizuki, T. Nakamura, H. Amano, and I. Akasaki Strain and crystalline quality of nitride semiconductors:GaN, AlGaN, AlInN and multiple quantum well structures
Journal Volume Year Pages Concerned
Proc. of the Fifth Symposium on Atomic-scale Surface and Interface Dynamics   2001 91-96

Author Title of Article
M. Haino, A. Motogaito, H. Miyake, K. Hiramatsu, N. Sawaki, Y. Iyechika, T. Maeda, and I. Akasaki Fabrication and characterization of high quality buried tungsten metal structure by epitaxial-lateral-overgrown GaN via low-pressure metalorganic vapor phase epitaxy
Journal Volume Year Pages Concerned
Proc. of the Fifth Symposium on Atomic-scale Surface and Interface Dynamics   2001 105-108

Author Title of Article
S. Terao, M. Iwaya, R. Nakamura, S. Kamiyama, H. Amano and I. Akasaki In-situ observation of fracture during grown of AlGaN on GaN
Journal Volume Year Pages Concerned
Proceedings of the Fifth Symposium on Atomic-scale Surface and Interface Dynamics   2001 109-112

Author Title of Article
S. Nitta, Y. Yukawa, M. Kosaki, M. Iwaya, S. Yamaguchi, H. Amano, and I. Akasaki Mass transport in nitrides
Journal Volume Year Pages Concerned
Proceedings of the Fifth Symposium on Atomic-scale Surface and Interface Dynamics   2001 113-116

Author Title of Article
S. Terao, M. Iwaya, R. Nakamura, S. Kamiyama, H. Amano, and I. Akasaki Fracture of AlxGa1-xN/GaN Heterostructure-Compositional and Impurity Dependence
Journal Volume Year Pages Concerned
Jpn. J. Appl, Phys 40 2001 L195-L197

Author Title of Article
I. Akasaki and H. Amano Semiconductors and Semimetals High brightness light emitting diodes Edited by G. B. Stringfellow and M. G. Craford
Journal Volume Year Pages Concerned
ACADEMIC PRESS   1997 469

Author Title of Article
I. Akasaki and H. Amano Semiconductors and Semimetals/Vol. 50 Gallium nitride (GaN)I, Edited by J. I. Pankove, T. D. Moustakas
Journal Volume Year Pages Concerned
ACADEMIC PRESS 50 1997 503

Author Title of Article
I. Akasaki and H. Amano "Lasers" in Gallium Nitride (GaN)□ in Semiconductors and Semimetals, Vol 50, Chap. 15, ed. by J. I. Pankove and T. D. Moustakas, Academic Press, San Diego, U. S. A. 1998
Journal Volume Year Pages Concerned
ACADEMIC PRESS 50 1997 469

Author Title of Article
I. Akasaki (Principal Editor) Progress in Visible Light Emitting
Journal Volume Year Pages Concerned
Diodes Display and Imaging (Jpn. ed. ) 8 2000  

Author Title of Article
天野 浩, 赤崎 勇 格子不整合系のエピタキシャル成長の欠陥制御
Journal Volume Year Pages Concerned
共立出版 第7章 2000  


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