| 1.Research Institution | Meijo University | |
| 2.Research Area | Physical and Engineering Sciences | |
| 3.Research Field | Atomic-scale Surface and Interface Dynamics | |
| 4.Term of Project | FY1996〜FY2000 | |
| 5.Project Number | 96P00204 | |
| 6.Title of Project | Dynamic Process and Control of the Buffer Layer at the Interface in a Highly-Mismatched System |
| Name | Institution,Department | Title of Position |
| Isamu Akasaki | Faculty of Science and Technology | Professor |
8.Core Members
| Names | Institution,Department | Title of Position |
| Yoshikazu Takeda | Nagoya University, Graduate School of Engineering | Professor |
| Kazumasa Hiramatsu | Faculty of Engineering, Mie University | Professor |
| Hiroshi Amano | Faculty of Science and Technology, Meijo University | Associate Professor |
9.Cooperating Researchers
| Names | Institution,Department | Title of Position |
| Kiyoshi Takahashi | Teikyo University of Science and Engineering | Professor |
| Noriyuki Kuwano | Advanced Science and Technology Center for Cooperative Research, Kyushu University | Professor |
| Masao Tabuchi | Nagoya University, Graduate School of Engineering | Assistant Professor |
10.Summary of Research Results
|
This report is the summary of the five years program on "Dynamic Process and Control of the Buffer Layer at the Interface in a Highly-Mismatched System" mainly performed at Meijo University. In this program, we focused on the understanding the mechanism of low temperature deposited buffer layer in atomic scale, especially how it transfers the crystalline information from the highly mismatched substrate to the upper group III nitride layers. In-situ stress monitoring, X-ray CTR and fluolescent EXAFS were performed to clarify the process of nitride growth. These understanding as well as the detailed study on the crystallization process by high-temperature TEM and the behavior of dislocations lead to the development of very low-dislocation density GaN and AlGaN. High performance UV detector and UV-LED were achieved using low dislocation density crystals. |
11.Key Words
(1)Group III nitrides、(2)Low temperature deposited layer、(3)Strain and Stress
(4)Lateral growth、(5)X-ray CTR、(6)Fluolescent EXAFS
(7)Dislocations、(8)Mass transport、(9)Aluminum Indium Nitride
12.References
| Author | Title of Article | |||
| T. Detchprohm, T. Kuroda, K. Hiramatsu, N. Sawaki and H. Goto | The selective growth in hydride vapor phase epitaxy of GaN | |||
| Journal | Volume | Year | Pages Concerned | |
| Inst. Phys. Conf. Ser. | 142･5 | 1996 | 859-862 | |
| Author | Title of Article | |||
| K. Hiramatsu, S. Kitamura and N. Sawaki | Facets formation mechanism of GaN hexagonal pyramids on dot-patterns visa selective MOVPE | |||
| Journal | Volume | Year | Pages Concerned | |
| Mat. Res. Soc. Symp. Proc. | 395 | 1996 | 267-271 | |
| Author | Title of Article | |||
| H. Siege, P. Thurian, L. Eckey, A. Hoffman, C. Thomsen, B. K. Meyer, H. Amano, I. Akasaki, T. Detchprohm, and K. Hiramatsu | Spacially resolved photoluminescence and Raman scattering experiments on the GaN/sapphire interface | |||
| Journal | Volume | Year | Pages Concerned | |
| Appl. Phys. Lett. | 68 | 1996 | 1265-1266 | |
| Author | Title of Article | |||
| I. Akasaki and H. Amano | Crystal growth of column-III nitride semiconductors and their electrical and optical properties | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Crystal Growth | 163 | 1996 | 86-92 | |
| Author | Title of Article | |||
| M. Koike, S. Yamasaki, S. Nagai, N. Koide, S. Asami, H. Amano and I. Akasaki | High-quality GaInN/GaN multiple quantum wells | |||
| Journal | Volume | Year | Pages Concerned | |
| Appl. Phys. Lett. | 68 | 1996 | 1403-1405 | |
| Author | Title of Article | |||
| D. Behr, J. Wagner, J. Schneider, H. Amano and I. Akasaki | Resonant Raman scattering in hexagonal GaN | |||
| Journal | Volume | Year | Pages Concerned | |
| Appl. Phys. Lett. | 68 | 1996 | 2404-2406 | |
| Author | Title of Article | |||
| C. Wetzel, E. E. Haller, H. Amano and I. Akasaki | Infrared reflection on GaN and AlGaN thin film heterostructures with AlN buffer layers | |||
| Journal | Volume | Year | Pages Concerned | |
| Appl. Phys. Lett. | 68 | 1996 | 2547-2549 | |
| Author | Title of Article | |||
| Y. J. Wang, R. Kaplan, H. K. Ng, K. Doverspike, D. K. Gaskill, T. Ikedo, H. Amano and I. Akasaki | Magneto-optical studies of GaN and GaN/AlxGa1-xN:Donor Zeeman spectroscopy and two dimensional electron gas cyclotron resonance | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Appl. Phys. | 79 | 1996 | 8007-8010 | |
| Author | Title of Article | |||
| I. Akasaki, S. Sota, H. Sakai, T. Tanaka, M. Koike and H. Amano | Shortest wavelength semiconductor laser diode | |||
| Journal | Volume | Year | Pages Concerned | |
| Electronics Letters | 32 | 1996 | 1105-1106 | |
| Author | Title of Article | |||
| J. Burm, W. J. Schaff, L. F. Eastman, H. Amano and I. Akasaki | 75A GaN channel modulation doped field effect transistors | |||
| Journal | Volume | Year | Pages Concerned | |
| Appl. Phys. Lett | 68 | 1996 | 2849-2851 | |
| Author | Title of Article | |||
| J. P. Bergman, T. Luntstrom, B. Monemar, H. Amano and I. Akasaki | Photoluminescence related to the two-dimensional electron gas at a GaN/AlGaN heterointerface | |||
| Journal | Volume | Year | Pages Concerned | |
| Appl. Phys. Lett. | 68 | 1996 | 3456-3458 | |
| Author | Title of Article | |||
| T. Takeuchi, H. Takeuchi, S. Sota, H. Sakai, H. Amano and I. Akasaki | Optical Properties of Strained AlGaN on GaN | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. of Appl. Phys. | 36 | 1997 | L177-L179 | |
| Author | Title of Article | |||
| T. Takeuchi, S. Sota, M. Katsuragawa, M. Komori, H. Takeuchi, H. Amano and I. Akasaki | Quantum-Confined Stark Effect due to Piezoelectric Fields in GaInN Strained Quantum Wells | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. of Appl. Phys. | 36 | 1997 | L382-L385 | |
| Author | Title of Article | |||
| S. Ruvimov, Z. Liliental-Weber, C. Dieker, J. Washburn, M. Koike, H. Amano and I. Akasaki | TEM/HREM ANALYSIS OF DEFECTS IN GaN EPITAXIAL LAYERS GROWN BY MOVPE ON SiC AND SAPPHIRE | |||
| Journal | Volume | Year | Pages Concerned | |
| Mat. Res. Soc. Symp. Proc. | 468 | 1997 | 287-292 | |
| Author | Title of Article | |||
| M. Kunzer, J. Baur, U. Kaufmann, J. Schneider, H. Amano and I. Akasaki | Properties of Mg and Zn acceptors in MOVPE GaN as studied by optically detected magnetic | |||
| Journal | Volume | Year | Pages Concerned | |
| Solid-State Electronics | 41 | 1997 | 189-193 | |
| Author | Title of Article | |||
| B. Monemar, J. P. Bergman, I. A. Buyanova, H. Amano, I. Akasaki, T. Detchprohm, K. Hiramatsu and N. Sawaki | The excitonic bandgap of GaN: Dependence on substrate | |||
| Journal | Volume | Year | Pages Concerned | |
| Solid-State Electronics | 41 | 1997 | 1403-1405 | |
| Author | Title of Article | |||
| A. Hoffmann, L. Eckey, P. Maxim, J. -CHR, Holst, R. Heitz, D. M. Hofmann, D. Kovalev, G. Stevde, D. Volm, B. D. Meyer, T. Detchprohm, K. Hiramatsu, H. Amano and I. Akasaki | Dynamic study of the yellow luminescence band in GaN | |||
| Journal | Volume | Year | Pages Concerned | |
| Solid State Electronics | 41 | 1997 | 275-278 | |
| Author | Title of Article | |||
| H. Sakai, T. Takeuchi, H. Amano and I. Akasaki | GaNの誘導放出機構と混晶効果 | |||
| Journal | Volume | Year | Pages Concerned | |
| レーザ研究 | 25 | 1997 | 510-513 | |
| Author | Title of Article | |||
| I. Akasaki and H. Amano | Progress and prospect of group-□ nitride semiconductors | |||
| Journal | Volume | Year | Pages Concerned | |
| J. of Crystal Growth | 175/176 | 1997 | 29-36 | |
| Author | Title of Article | |||
| W. Li, P. Bergman, B. Monemar, H. Amano and I. Akasaki | Photoluminescence decay dynamics in an InGaN/GaN/AlGaN single quantum well | |||
| Journal | Volume | Year | Pages Concerned | |
| J. of Appl. Phys. | 81 | 1997 | 1005-1007 | |
| Author | Title of Article | |||
| I. Akasaki and H. Amano | Crystal Growth and Conductivity of Group□ Nitride Semiconductors and Their Application to Short Wavelength Light Emitters | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. of Appl. Phys. | 36 | 1997 | 5393-5408 | |
| Author | Title of Article | |||
| M. Iwaya, T. Takeuchi, S. Yamaguchi, C. Wetzel, H. Amano and I. Akasaki | Reduction of Etch Pit Density in Organometallic Vapor Phase Epitaxy-Grown GaN on Sapphire by Insertion of a Low-Temperature-Deposited Buffer Layer between High-Temperature-Grown GaN | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. of Appl. Phys. (to be published) | 1998 | |||
| Author | Title of Article | |||
| 桑野範之、滝 海、沖 憲典、川口靖利、平松和政、澤木宣彦 | 有機金属気相法で作製したInGaN厚膜の成長過程のTEM観察 | |||
| Journal | Volume | Year | Pages Concerned | |
| 日本結晶成長学会誌 | 25(印刷中) | 1998 | ||
| Author | Title of Article | |||
| K. Hiramatsu, H. Matsushima, T. Shibata, N. Sawaki, K. Tadatomo, H. Okagawa, Y. Ohuchi, Y. Honda, and T. Matsue | Selective area growth of GaN by MOVPE and HVPE | |||
| Journal | Volume | Year | Pages Concerned | |
| Mat. Res. Soc. Symp. Proc. (in press) | 1998 | |||
| Author | Title of Article | |||
| M. Tabuchi, N. Matsumoto, Y. Takeda, T. Takeuchi, H. Amano, and I. Akasaki | Crystal quality and surface structure of sapphire and buffer layers on sapphire revealed by CTR scattering | |||
| Journal | Volume | Year | Pages Concerned | |
| Appl. Surf. Sci., (in press) | 1998 | |||
| Author | Title of Article | |||
| M. Tabuchi, N. Matsumoto, Y. Takeda, T. Takeuchi, H. Amano, and I. Akasaki | Crystal quality and surface structure of sapphire and buffer layers on sapphire revealed by CTR scattering | |||
| Journal | Volume | Year | Pages Concerned | |
| ICNS97 ICNS'97, Japan, 27-31 Oct. 1997., Symposium Proc. | 1998 | |||
| Author | Title of Article | |||
| 桑野範之、滝 海、沖 憲典、川口靖利、平松和政、澤木宣彦 | 有機金属気相法で作製したInGaN厚膜の成長過程のTEM観察 -組成不均一の発生- | |||
| Journal | Volume | Year | Pages Concerned | |
| 日本結晶成長学会誌 | 25.2 | 1998 | 106-112 | |
| Author | Title of Article | |||
| 桑野範之 | GaN系材料の微細構造 -FIBの応用- | |||
| Journal | Volume | Year | Pages Concerned | |
| 第9回電顕サマースクール電子顕微鏡 基礎技術と応用1998 ~極微構造解明の新展開~ 第9回電顕サマースクール実行委員会 編 学際企画 | 1998 | 116-121 | ||
| Author | Title of Article | |||
| K. Tsukamoto, W. Taki, N. Kuwano, K. Oki, T. Shibata, N. Sawaki and K. Hiramatsu | Large-Angle Gradual Tilting of Crystallographic Orientations of HVPE-Grown GaN Selectively Grown on MOVPE-GaN | |||
| Journal | Volume | Year | Pages Concerned | |
| Proc. 2nd Int. Sym. Blue Laser and Light Emitting Diodes, Chiba, 1998, Ed., K. Onabe, K. Hiramatsu, K. Itaya and Y. Nakano, Ohmsha, Tokyo | 1998 | 488-491 | ||
| Author | Title of Article | |||
| 桑野範之、沖 憲典 | InxGa1-xN/GaN/LT-AlN/α-Al2O3(0001)に形成された貫通転位先端のピット | |||
| Journal | Volume | Year | Pages Concerned | |
| 日本金属学会会報まてりあ | 37 | 1998 | 992 | |
| Author | Title of Article | |||
| I. Akasaki | The Evolution of Nitride Semiconductors | |||
| Journal | Volume | Year | Pages Concerned | |
| Mat. Res. Soc. Symp. Proc. | 482 | 1998 | 3-14 | |
| Author | Title of Article | |||
| H. Amano, T. Takeuchi, S. Yamaguchi, S. Nitta, M. Kariya, M. Iwaya, C. Wetzel and I. Akasaki | Structural Properties of Nitrides Grown by OMVPE on Sapphire Substrate | |||
| Journal | Volume | Year | Pages Concerned | |
| Mat. Res. Soc. Symp. Proc. | 482 | 1998 | 479-488 | |
| Author | Title of Article | |||
| C. Wetzel, H. Amano, I. Akasaki, T. Suski, J. W. Ager, E. R. Weber, E. E. Haller and B. K. Meyer | Localized Donors in GaN: Spectroscopy using Large Pressures | |||
| Journal | Volume | Year | Pages Concerned | |
| Mat. Res. Soc. Symp. Proc. | 482 | 1998 | 489-500 | |
| Author | Title of Article | |||
| S. Yamaguchi, M. Kariya, S. Nitta, T. Takeuchi, C. Wetzel. H. Amano and I. Akasaki | Observation of photoluminescence from Al1-x,InxN heteroepitaxial films grown by metalorganic vapor phase epitaxy | |||
| Journal | Volume | Year | Pages Concerned | |
| Appl. Phys. Lett. | 73/6 | 1998 | 830-831 | |
| Author | Title of Article | |||
| I. Akasaki | Recent Progress in Crystal Growth and Conductivity Control of Widegap Group □ Nitrides | |||
| Journal | Volume | Year | Pages Concerned | |
| Proc. Mat. Res. Soc. | 1998 Spring Meeting | 1998 | ||
| Author | Title of Article | |||
| T. Takeuchi, C. Wetzel, S. Yamaguchi, H. Sakai, H. Amano, I. Akasaki, Y Kaneko, S. Nakagawa, Y. Yamaoka and N. Yamada | Determination of piezoelectric fields in GaInN strained quantum wells using the quantum-confined Stark effect | |||
| Journal | Volume | Year | Pages Concerned | |
| Appl. Phys. Lett. | 73 | 1998 | 1691-1693 | |
| Author | Title of Article | |||
| I. Akasaki | Recent Progress in Crystal Growth and Conductivity Control of Widegap Group □ Nitrides | |||
| Journal | Volume | Year | Pages Concerned | |
| Proc. Mat. Res. Soc. | 1998 Spring Meeting | 1998 | ||
| Author | Title of Article | |||
| S. Yamaguchi, M. Kariya, S. Nitta, H. Kato, T. Takeuchi, C. Wetzel, H. Amano and I. Akasaki | Structural and optical properties of AlInN and AlGaInN on GaN grown by metalorganic vapor phase epitaxy | |||
| Journal | Volume | Year | Pages Concerned | |
| Proc. 9th Int. Conf. on Metal Organic Vapor Phase Epitaxy | 1998 | |||
| Author | Title of Article | |||
| S. Yamaguchi, M. Kariya, S. Nitta, R. Mizumoto, C. Anbe, S. Ikuta, M. Katsuragawa, T. Wauke, H. Kato, T. Takeuchi, C. Wetzel, H. Amano, and I. Akasaki | Crystal growth of lattice matched AlInN to GaN and the relation of strong bandgap bowing to microscopic structure | |||
| Journal | Volume | Year | Pages Concerned | |
| Proc. of the 24th Intl. Conf. on the Phys. of Semiconductors | 1998 | |||
| Author | Title of Article | |||
| H. Amano, T. Takeuchi, S. Yamaguchi, C. Wetzel, and I. Akasaki | Characterization of crystalline quality of GaN on sapphire and ternary alloys on GaN | |||
| Journal | Volume | Year | Pages Concerned | |
| Trans. Inst. Electron. Inform. & Commun. Engineers | C-II(J81-C-II) | 1998 | 65-71 | |
| Author | Title of Article | |||
| C. Anbe, T. Takeuchi, R. Mizumoto, H. Katoh, S. Yamaguchi, C. Wetzel, H. Amano, I. Akasaki, Y. Kaneko and N. Yamada | GaN-based laser diode with focused ion beam-etched mirrors | |||
| Journal | Volume | Year | Pages Concerned | |
| Proc. European Materials Research Society Spring Meeting | 1998 | |||
| Author | Title of Article | |||
| M. Kariya, S. Nitta, S. Yamaguchi, H. Kato, T. Takeuchi, C. Wetzel, H. Amano and I. Akasaki | Structural properties of Al1-xInxN ternary alloys on GaN grown by metalorganic vapor-phase epitaxy | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 37 | 1998 | L697-L699 | |
| Author | Title of Article | |||
| H. Sakai, T. Takeuchi, S. Sota, M. Katsuragawa, M. Komori, H. Amano and I. Akasaki | Stimulated emission with the longest wavelength in the blue region from GaInN/GaN multi-quantum well structures | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Crystal Growth | 189/190 | 1998 | 831-836 | |
| Author | Title of Article | |||
| M. Katsuragawa, S. Sota, M. Komori, C. Ambe, T. Takeuchi, H. Sakai, H. Amano and I. Akasaki | Themal ionization energy of Si and Mg in AlGaN | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Crystal Growth | 189/190 | 1998 | 528-531 | |
| Author | Title of Article | |||
| T. Takeuchi, S., Sota, H. Sakai, H. Amano, I. Akasaki, Y. Kaneko, S. Nakagawa, Y. Yamaoka, N. Yamada | Quantum-confined Stark effect in strained GaInN quantum wells on sapphire(0001) | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Crystal Growth | 189/190 | 1998 | 616-620 | |
| Author | Title of Article | |||
| C. Wetzel, T. Takeuchi, H. Amano and I. Akasaki | Valenceband splitting and luminescence Stokes shift in GaInN/GaN thin films and multiple quantum well structures | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Crystal Growth | 189/190 | 1998 | 621-624 | |
| Author | Title of Article | |||
| M. Tabuchi, N. Matsumoto, Y. Takeda, T. Takeuchi, H. Amano and I. Akasaki | Crystal quality and surface structure of sapphire and buffer layers on sapphire revealed by crystal truncation rod scattering | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Crystal Growth | 189/190 | 1998 | 291-294 | |
| Author | Title of Article | |||
| C. Pernot, A. Hirano, H. Amano and I. Akasaki | Investigation of the Leakage Current in GaN P-N Junctions | |||
| Journal | Volume | Year | Pages Concerned | |
| jpn. J. Appl. Phys. | 37 | L1202-L1204 | ||
| Author | Title of Article | |||
| C. Wetzel, T. Takeuchi, S. Yamaguchi, H. Katoh, H. Amano and I. Akasaki | Optical bandgap in Gal-xInxN(0 | |||
| Journal | Volume | Year | Pages Concerned | |
| Appl. Phys. Lett. | 73 | 1998 | 1994-1996 | |
| Author | Title of Article | |||
| H. Amano, M. Iwaya, T. Kashima, M. Katsuragawa, I. Akasaki, J. Han, S. Hearne, J. A. Floro, E. Chason and J. Figiel | Stress and Defect Control in GaN Using Low Temperature Interlayers | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys | 37 | 1998 | L1540-L1542 | |
| Author | Title of Article | |||
| C. Wetzel, H. Amano, I. Akasaki, T. Suski, J. W. Ager, E. R. Weber, E. E. Haller, and B. K. Meyer | Localized donors in GaN:spectroscopy using large pressures | |||
| Journal | Volume | Year | Pages Concerned | |
| Nitride Semiconductors Eds. F. A. Ponce, S. P. DenBaars, B. K. Meyer, S. Nakamura, and T. Strite, Proc. Mat. Res. Soc. Symp482 | 1998 | 489-500 | ||
| Author | Title of Article | |||
| C. Wetzel, T. Takeuchi, H. Amano, and I. Akasaki | Piezoelectric quantization in GaInN thin films and multiple quantum well structures | |||
| Journal | Volume | Year | Pages Concerned | |
| Wide-Bandgap Semiconductors for High Power, High Frequency and High Temperature, Eds. S. DenBaars, J. Palmour, M. Shur, and M. Spencer, Proc. Mat. Res. Soc. Symp. | 512 | 1998 | 181-186 | |
| Author | Title of Article | |||
| C. Wetzel, H. Amano, I. Akasaki, J. W. Ager III, M. Topf, and B. K. Meyer | Correlation of vibrational modes and DX-like centers in GaN:O | |||
| Journal | Volume | Year | Pages Concerned | |
| Physica B | 273-274 | 1999 | 109-112 | |
| Author | Title of Article | |||
| C. Wetzel, T. Takeuchi, H. Amano, and I. Akasaki | Piezoelectric level splitting in GaInN/GaN quantum wells | |||
| Journal | Volume | Year | Pages Concerned | |
| GaN and Related Alloys Eds. S. J. Pearton, C. Kuo, T. Uenoyama, A. F. Wright, Proc. Mat. Res. Soc. Symp. | 537 | 1999 | G3.66 | |
| Author | Title of Article | |||
| C. Wetzel, T. Takeuchi, S. Yamaguchi, H. Katoh, H. Amano, and I. Akasaki | Piezoelectric field induced transitions in GaInN/GaN multiple quantum wells | |||
| Journal | Volume | Year | Pages Concerned | |
| Blue Laser and Light Emitting Diodes II. eds. K. Onabe, K. Hiramatsu, K. Itaya, Y. Nakano, Tokyo, Japan: Ohmsha, 1998 | 1999 | 646-649 | ||
| Author | Title of Article | |||
| I. Akasaki | Progress and prospects of group III nitride semiconductors | |||
| Journal | Volume | Year | Pages Concerned | |
| Blue Laser and Light Emitting Diodes II. eds. K. Onabe, K. Hiramatsu, K. Itaya, Y. Nakano, Tokyo, Japan: Ohmsha, 1998 | 1999 | 9-13 | ||
| Author | Title of Article | |||
| H. Amano, M. Iwaya, N. Hayashi, T. Kashima, M. Katsuragawa, T. Takeuchi, C. Wetzel, and I. Akasaki | Improvement of crystalline quality of GaN, AlGaN and AlN on sapphire using low temperature interlayers | |||
| Journal | Volume | Year | Pages Concerned | |
| MRS Internet J. Nitride Semicond. Res. | 4S1 | 1999 | G10.1 | |
| Author | Title of Article | |||
| C. Wetzel, T. Takeuchi, H. Kato, H. Amano, and I. Akasaki | Piezoelectric effects in GaInN/GaN heterostructures and quantum wells | |||
| Journal | Volume | Year | Pages Concerned | |
| Proc. of the 24th Int. Conf. on the Physics of Semiconductors, Jerusalem, Israel, August 2-81998 (World Scientific, Singapore 1999). | 1999 | |||
| Author | Title of Article | |||
| S. Yamaguchi, M. Kariya, S. Nitta, R. Mizumoto, C. Anbe, S. Ikuta, M. Katsuragawa, T. Wauke, H. Kato, T. Takeuchi, C. Wetzel, H. Amano, and I. Akasaki | Crystal growth of lattice-matched Al1-xInxN to GaN and the relation of strong bandgap bowing to the microscopic structure | |||
| Journal | Volume | Year | Pages Concerned | |
| Proc. of the 24TH Int. Conf. on the Physics of Semiconductors, Jerusalem, Israel, August 2-8, 1998. (World Scientific, Singapore 1999). | 1999 | |||
| Author | Title of Article | |||
| C. Wetzel, T. Takeuchi, H. Amano, and I. Akasaki | Piezoelectric Franz-Keldysh effect in strained GaInN/GaN heterostructures | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Appl. Phys | 85(7) | 1999 | 3786-3791 | |
| Author | Title of Article | |||
| C. Wetzel, T. Takeuchi, S. Nitta, S. Yamaguchi, H. Amano, and I. Akasaki | Optical properties of GaInN/GaN heterostructures and quantum wells | |||
| Journal | Volume | Year | Pages Concerned | |
| 1998 IEEE Semiconducting and Insulating Materials Conference (Inst. Electrical and Electronics Engineers, Inc. Piscataway 1999) | 1999 | 239-242 | ||
| Author | Title of Article | |||
| S. Yamaguchi, M. Kariya, S. Nitta, T. Takeuchi, C. Wetzel, H. Amano, and I. Akasaki | Structural and optical properties of Al,SUB>1-xInxN grown by metal organic vapor-phase epitaxy | |||
| Journal | Volume | Year | Pages Concerned | |
| Proc. of the 18th Electronic Materials Symposium, Shirahama-shi, Wakayama-Ken, June 30-July 2,1999 | 1999 | 73-76 | ||
| Author | Title of Article | |||
| C. Pernot, A. Hirano, M. Iwaya, T. Detchprohm, H. Amano and I. Akasaki | Low-Intensity Ultraviolet Photodetectors Based on AlGaN | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 38 | 1999 | L487-489 | |
| Author | Title of Article | |||
| T. Takeuchi, T. Detchprohm, M. Yano, M. Yamaguchi, N. Hayashi, M. Iwaya, K. Isomura, K. Kimura, H. Amano, I. Akasaki, Yw. Kaneko, S. Watanabe, Y. Yamaoka, R. Shioda, T. Hidaka, Ys. Kaneko, N. Yamada | Fabrication and Characterization of GaN-based Laser Diode Grown on Thick n-AlGaN Contact Layer | |||
| Journal | Volume | Year | Pages Concerned | |
| Phys. Stat. Sol. (a) | 176 | 1999 | 31-35 | |
| Author | Title of Article | |||
| Y. Kaneko, R. Shioda, N. Yamada, T. Takeuchi, H. Amano and I. Akasaki | Study on electroluminescence spectrum and waveguide loss of GaInN multiple quantum well lasers | |||
| Journal | Volume | Year | Pages Concerned | |
| Phys. Stat. Sol. (a) | 176 | 1999 | 137-140 | |
| Author | Title of Article | |||
| C. Pernot, A. Hirano, M. Iwaya, T. Detchprohm, H. Amano, and I. Akasaki | Improvement of low intensity ultraviolet photodetectors based on AlGaN with low threading dislocation density | |||
| Journal | Volume | Year | Pages Concerned | |
| Phys. Stat. Sol. (a) | 176 | 1999 | 147-151 | |
| Author | Title of Article | |||
| K. Hiramatsu, K. Nishiyama, A. Motogaito, H. Miyake, Y. Iyechika and T. Maeda | Recent progress in selective area growth and epitaxial lateral overgrowth of III-nitrides : Effects of reactor pressure in MOVPE growth | |||
| Journal | Volume | Year | Pages Concerned | |
| Phys. Stat. Sol. (a) | 176 | 1999 | 535-543 | |
| Author | Title of Article | |||
| Y. Kawaguchi, S. Nambu, M. Yamaguchi, N. Sawaki, H. Miyake, K. Hiramatsu, K. Tsukamoto, N. Kuwano and K. Oki | Influence of ambient gas on the epitaxial lateral overgrowth of GaN by metalorganic vapor phase epitaxy | |||
| Journal | Volume | Year | Pages Concerned | |
| Phys. Stat. Sol. (a) | 176 | 561-565 | ||
| Author | Title of Article | |||
| S. Watanabe, N. Yamada, Y. Yamada, T. Taguchi, T. Takeuchi, H. Amano and I. Akasaki | Spectral study of photoluminescence from GaInN/GaN MQWs using CW and time-resolved measurements | |||
| Journal | Volume | Year | Pages Concerned | |
| Phys. Stat. Sol. (b) | 216 | 1999 | 335-339 | |
| Author | Title of Article | |||
| C. Wetzel, M. Kasumi, T. Detchprohm, T. Takeuchi, H. Amano and I. Akasaki | Discrete Stark-like ladder in piezoelectric GaInN/GaN quantum wells | |||
| Journal | Volume | Year | Pages Concerned | |
| Phys. Stat. Sol. (b) | 216 | 1999 | 399-403 | |
| Author | Title of Article | |||
| H. Amano, M. Iwaya, N. Hayashi, T. Kashima, S. Nitta, C. Wetzel and I. Akasaki | Control of dislocations and stress in AlGaN on sapphire using a low temperature interlayer | |||
| Journal | Volume | Year | Pages Concerned | |
| Phys. Stat. Sol. (b) | 216 | 1999 | 683-689 | |
| Author | Title of Article | |||
| R. Kimura, Y. Gotoh, T. Matsuzawa and K. Takahashi | High purity cubic GaN grown on a AlGaAs buffer layer by molecular beam epitaxy | |||
| Journal | Volume | Year | Pages Concerned | |
| Proc. of the 4th Symp. on Atomic-Scale Surface and Interface Dynamics, 2000, Tsukuba | 4 | 2000 | 301-304 | |
| Author | Title of Article | |||
| M. Iwaya, T. kashima, R. Nakamura, T. Detchprohm, S. Kamiyama, S. Yamaguchi, S. Nitta, M. Kariya, H. Amano, and I. Akasaki | Crack-free, thick and high-quality AlxGa1-xN using low-temperature interlayer | |||
| Journal | Volume | Year | Pages Concerned | |
| Proc. of the 4th Symp. on Atomic-Scale Surface and Interface Dynamics, 2000, Tsukuba | 4 | 2000 | 305-309 | |
| Author | Title of Article | |||
| I. Akasaki, S. Kamiyama, T. Detchprohm, T. Takeuchi and H. Amano | Growth of crack-free thick AlGaN layer for achievement of single lateral mode operation of GaN-based laser diode | |||
| Journal | Volume | Year | Pages Concerned | |
| Proc. of the 4th Symp. on Atomic-Scale Surface and Interface Dynamics, 2000, Tsukuba | 4 | 2000 | 311-314 | |
| Author | Title of Article | |||
| Y. Takeda, M. Tabuchi, M. Araki, S. Yamaguchi, H. Amano and I. Akasaki | Crystalline structure and surface morphology of AlN and GaN as buffer layers for GaN growth on sapphire surface-Atomic scale characterization- | |||
| Journal | Volume | Year | Pages Concerned | |
| Proc. of the 4th Symp. on Atomic-Scale Surface and Interface Dynamics, 2000, Tsukuba | 4 | 2000 | 315-321 | |
| Author | Title of Article | |||
| Y. Takeda, M. Tabuchi, M. Araki, S. Yamaguchi, H. Amano and I. Akasaki | Effect of crystalline structure of AlN buffer layers on GaInN/GaN growth -Atomic scale characterization- | |||
| Journal | Volume | Year | Pages Concerned | |
| Proc. of the 4th Symp. on Atomic-Scale Surface and Interface Dynamics, 2000, Tsukuba | 4 | 2000 | 321-324 | |
| Author | Title of Article | |||
| K. Hiramatsu, A. Motogaito, H. Miyake, H, Sone, N. sawaki, J. Christen and I. Akasaki | Epitaxial lateral overgrowth of GaN by HVPE using tungsten mask and characterization of their crystalline and optical properties | |||
| Journal | Volume | Year | Pages Concerned | |
| Proc. of the 4th Symp. on Atomic-Scale Surface and Interface Dynamics, 2000, Tsukuba | 4 | 2000 | 325-330 | |
| Author | Title of Article | |||
| S. Nitta, S. Yamaguchi, M. Kariya, M. Iwaya, T. Kashima, R. Nakamura, T. Detchprohm, S. Kamiyama, H. Amano and I. Akasaki | Mass transport of GaN and reduction of threading dislocations | |||
| Journal | Volume | Year | Pages Concerned | |
| Proc. of the 4th Symp. on Atomic-Scale Surface and Interface Dynamics, 2000, Tsukuba | 4 | 2000 | 331-336 | |
| Author | Title of Article | |||
| N. Kuwano, K. Horibuchi, K. Hiramatsu, N. Sawaki | TEM observation of microstructures in ELO-GaN grown by metalorganic vapor phase epitaxial method : Influences of carrier gas species and geometry of mask | |||
| Journal | Volume | Year | Pages Concerned | |
| Proc. of the 4th Symp. on Atomic-Scale Surface and Interface Dynamics, 2000, Tsukuba | 4 | 2000 | 337-340 | |
| Author | Title of Article | |||
| R. Kimura and K. Takahashi | High quality epitaxial growth of h-GaN on Al2O3(0001) and c-GaN on GaAs (100) by molecular beam epitaxy | |||
| Journal | Volume | Year | Pages Concerned | |
| Proc. 3rd Int. Symp. on blue laser and light emitting diodes, Berlin (2000). | 2000 | |||
| Author | Title of Article | |||
| R. Kimura and K. Takahashi | High phase purity cubic-GaN grown on GaAs (100) using AlGaAs buffer layer by molecular beam epitaxy | |||
| Journal | Volume | Year | Pages Concerned | |
| Proc. 3rd. German-Japan joint workshop, Physica Status Solidi, Berlin (2000) | 2000 | |||
| Author | Title of Article | |||
| R. Kimura, Y. Gotoh, T. Matsuzawa and K. Takahashi | High purity cubic GaN grown on a AlGaAs buffer layer by molecular beam epitaxy | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Crystal Growth | 209 | 2000 | 382-386 | |
| Author | Title of Article | |||
| R. Kimura, Y. Gotoh, T. Matsuzawa and K. Takahashi | High purity cubic GaN grown on a AlGaAs buffer layer by molecular beam epitaxy | |||
| Journal | Volume | Year | Pages Concerned | |
| Proc. of 7th Int. Conf. on Chemical Beam Epitaxy and Related Growth Technique (ICCBE-7; 1999 Tsukuba) | 1999 | 103-104 | ||
| Author | Title of Article | |||
| R. Kimura, K. Takahashi | A study of initial nucleation mechanism of MBE grown GaN on sapphire | |||
| Journal | Volume | Year | Pages Concerned | |
| Proc. 3rd Symp. on Atomic-Scale Surface and Interface Dynamics (1999, Fukuoka) | 1999 | 311-315 | ||
| Author | Title of Article | |||
| 寒川義裕、桑野範之、沖 憲典、伊藤 智徳 | 原子間ポテンシャルを用いたInGaAs/(110)InP混晶中に出現するCuAu-I型規則構造形成機構の理論的解析 | |||
| Journal | Volume | Year | Pages Concerned | |
| 日本金属学会誌 | 63(6) | 1999 | 741-746 | |
| Author | Title of Article | |||
| S. Kamiyama, T. Takeuchi, T. Detchprohm, M. Iwaya, N. Hayashi, K. Isomura, K. Kimura, H. Amano and I. Akasaki | Improvement of Far Field Pattern in Nitride Laser Diodes using Crack-free Thick n-AlGaN Cladding layer | |||
| Journal | Volume | Year | Pages Concerned | |
| Proc. 16th meeting of JSPS 162nd Research Committee, July 27, 1999, Tsukuba | 1999 | 9-13 | ||
| Author | Title of Article | |||
| S. Kamiyama, T. Takeuchi, T. Detchprohm, M. Iwaya, N. Hayashi, K. Isomura, K. Kimura, T. Sato, H. Amano, I. Akasaki, Yw. Kaneko, and N. Yamada | GaN-based semiconductor laser with stable single transverse-mode operation | |||
| Journal | Volume | Year | Pages Concerned | |
| Proc. 2nd Japan-Korea Joint Workshop on Short-Wavelength Semiconductor Optoelectronic Device and Materials, Sep. 30-Oct. 2, 1999, Chiba | 1999 | |||
| Author | Title of Article | |||
| S. Kamiyama, M. Iwaya, H. Amano and I. Akasaki | Performance of GaN-Based Semiconductor Laser with Spectral Broadening due to Compositional Inhomogeneity in GaInN Active Layer | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 39 | 2000 | 390-392 | |
| Author | Title of Article | |||
| 上山 智,佐藤敏幸、岩谷素顕、天野 浩、赤崎 勇 | 単一横モード型GaN系半導体レーザ | |||
| Journal | Volume | Year | Pages Concerned | |
| オプトロニクス | No.1 | 2000 | 68-73 | |
| Author | Title of Article | |||
| H. Sone, S. Nambu, Y. Kawaguchi, M. Yamaguchi, H. Miyake, K. Hiramatsu, Y. Iyechika, T. Maeda and N. Sawaki | Optical and crystalline properties of epitaxial-lateral-overgrown-GaN using tungsten mask by hydride vapor phase epitaxy | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 38/4A | 1999 | L356-359 | |
| Author | Title of Article | |||
| K. Hiramatsu, H. Matsushima, T. Shibata, Y. Kawaguchi, and N. Sawaki | Selective area growth and epitaxial lateral overgrowth of GaN by metalorganic vapor phase epitaxy and hydride vapor phase epitaxy | |||
| Journal | Volume | Year | Pages Concerned | |
| Mater. Sci. & Eng. | B59 | 1999 | 104-111 | |
| Author | Title of Article | |||
| C. Ambe, T. Takeuchi, R. Mizumoto, H. Katoh, S. Yamaguchi, C. Wetzel, H. Amano, I. Akaskai, Y. Kaneko and N. Yamada | GaN-based laser diode with focused ion beam etched mirrors | |||
| Journal | Volume | Year | Pages Concerned | |
| Mater. Sci. Eng. | B59 | 1999 | 382-385 | |
| Author | Title of Article | |||
| Y. Kawaguchi, S. Nambu, H. Sone, M. Yamaguchi, H. Miyake, K. Hiramatsu, N. Sawaki, Y. Iyechika and T. Maeda | Selective area growth (SAG) and epitaxial lateral overgrowth (ELO) of GaN using tungsten mask | |||
| Journal | Volume | Year | Pages Concerned | |
| Proc. Mat. Res. Soc. Symp. | 537 | 1999 | G4.1 | |
| Author | Title of Article | |||
| H. Miyake, A. Motogaito and K. Hiramatsu | Effects of reactor pressure on epitaxial lateral overgrowth of GaN via low-pressure metalorganic vapor phase epitaxy | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 38 9A/B | 1999 | L1000-L1002 | |
| Author | Title of Article | |||
| Y. Honda, Y. Iyechika, T. Maeda, H. Miyake, K. Hiramatsu, H. Sone and N. Sawaki | Crystal orientation fluctuation of epitaxial-lateral-overgrown GaN with W mask and SiO2 mask observed by transmission electron diffraction and X-ray rocking curves | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 38 11B | 1999 | L1299-1302 | |
| Author | Title of Article | |||
| S. Yamaguchi, M. Kariya, S. Nitta, T. Takeuchi, C. Wetzel, H. Amano, and I. Akasaki | Structural properties of InN on GaN grown by metalorganic vapor phase epitaxy | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Appl. Phys. | 85 | 1999 | 7682-7688 | |
| Author | Title of Article | |||
| M. Kariya, S. Nitta, S. Yamaguchi, T. Kashima, H. Katoh, H. Amano, and I. Akasaki | Structural characterization of Al1-xInxN lattice-matched to GaN | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Crystal Growth | 209 | 1999 | 419-423 | |
| Author | Title of Article | |||
| S. Yamaguchi, M. Kariya, S. Nitta, H. Amano and I. Akasaki | Improvement of structural and optical properties of GaN and AlGaN using isoelectronic In doping | |||
| Journal | Volume | Year | Pages Concerned | |
| to be published in Inst. Int. Conf. Ser. | 2000 | |||
| Author | Title of Article | |||
| M. Kariya, S. Nitta, S. Yamaguchi, H. Amano, and I. Akasaki | Mosaic Structure of Ternary Al1-xInxN Films on GaN Grown by Metalorganic Vapor Phase Epitaxy | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 38 | 1999 | L984-L986 | |
| Author | Title of Article | |||
| S. Yamaguchi, M. Kariya, S. Nitta, H. Amano, and I. Akasaki | The Effect of Isoelectronic In-Doping on the Structural and Optical Properties of (Al)GaN Grown by Metal Organic Vapor Phase Epitaxy | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 39 | 1999 | L143-145 | |
| Author | Title of Article | |||
| S. Yamaguchi, M. Kariya, S. Nitta, H. Amano, and I. Akasaki | Strain relief by In-doping and its effect on the surface and the interface structures in (Al)GaN on sapphire grown by metalorganic vapor phase epitaxy | |||
| Journal | Volume | Year | Pages Concerned | |
| to be published in Appl. Surf. Sci. | 1999 | |||
| Author | Title of Article | |||
| S. Yamaguchi, M. Kariya, S. Nitta, H. Amano, and I. Akasaki | Anomalous Features in Optical Properties of Al1-xInxN on GaN Grown by Metalorganic Vapor Phase Epitaxy | |||
| Journal | Volume | Year | Pages Concerned | |
| Appl. Phys. Lett | 76 | 1999 | 876-878 | |
| Author | Title of Article | |||
| S. Yamaguchi, M. Kariya, S. Nitta, H. Amano, and I. Akasak | Strain Relief and Its Effect on the Properties of GaN Using Isoelectronic In Doping Grown by Metalorganic Vapor Phase Epitaxy | |||
| Journal | Volume | Year | Pages Concerned | |
| Appl. Phys. Lett. | 75 | 1999 | 4106-4108 | |
| Author | Title of Article | |||
| M. Kariya, S. Nitta, M. Kosaki, Y. Yukawa, S. Yamaguchi, H. Amano, and I. Akasaki | Effect on GaN/Al0.17Ga0.83N and Al0.05Ga0.83N/Al0.17Ga0.83N Quantum Wells by Isoelectronic In-Doping During Metalorganic Vapor Phase Epitaxy | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 39 | 2000 | L143-145 | |
| Author | Title of Article | |||
| N. Faleev, K. Pavlov, M. Tabuchi and Y. Takeda | Influence of long-range lateral ordering in structures with quantum dots in the spatial distribution of diffracted X-ray radiation | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 38 | 1999 | 818-821 | |
| Author | Title of Article | |||
| K. Pavlov, N. Faleev, M. Tabuchi and Y. Takeda | Specific aspects of X-ray diffraction on statistically disordered QDs in perfect crystal matrix | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 38,Suppl.38-1 | 1999 | 269-272 | |
| Author | Title of Article | |||
| N. Faleev, K. Pavlov, M. Tabuchi and Y. Takeda | CTR and DCXRD studies of lateral ordering of quantum dots in multilayer periodic structures | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 38,Suppl.38-1 | 1999 | 277-280 | |
| Author | Title of Article | |||
| M. Tabuchi, Y. Takeda, N. Matsumoto, H. Amano and I. Akasaki | X-ray interference and crystal truncation rod observation of GaN and GaInN layers grown on sapphire with AlN buffer layer | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 38,Suppl.38-1 | 1999 | 281-284 | |
| Author | Title of Article | |||
| N. N. Faleev, A. Yu Egorov, A. E. Zhukov, A. R. Kovsh, S. S. Mikhrin, V. M. Ustinov, K. M. Pavlov, V. I. Punegov, M. Tabuchi and Y. Takeda | X-ray diffraction analysis of multilayer InAs-GaAs hetereostructures with InAs qunatum dots | |||
| Journal | Volume | Year | Pages Concerned | |
| Semiconductors | 33 | 1999 | 1229-1237 | |
| Author | Title of Article | |||
| 田渕雅夫、平山啓介、竹田美和 | X線反射率測定によるIII族窒化物半導体の表面構造解析 | |||
| Journal | Volume | Year | Pages Concerned | |
| X線回折研究のあゆみ | 20 | 1999 | 21-24 | |
| Author | Title of Article | |||
| 田渕雅夫、竹田美和 | X線CTR散乱とX線反射率測定によるIII族窒化物半導体の構造解析 | |||
| Journal | Volume | Year | Pages Concerned | |
| 理学電機ジャーナル | 30 | 1999 | 40-45 | |
| Author | Title of Article | |||
| C. Wetzel and I. Akasaki | O, C and other unintentional impurities in GaN and related compounds | |||
| Journal | Volume | Year | Pages Concerned | |
| Properties, Synthesis, Characterization, and Applications of Gallium Nitride and related Compounds Eds. J. Edgar, T. S. Strite, I. Akasaki, H. Amano and C. Wetzel (INSPEC, IEE, London, UK, 1999) | 23 | 1999 | 284 | |
| Author | Title of Article | |||
| C. Wetzel and I. Akasaki | Raman and IR studies of InN | |||
| Journal | Volume | Year | Pages Concerned | |
| Properties, Synthesis, Characterization, and Applications of Gallium Nitride and related Compounds Eds. J. Edgar, T. S. Strite, I. Akasaki, H. Amano and C. Wetzel (INSPEC, IEE, London, UK, 1999) | 23 | 1999 | 121 | |
| Author | Title of Article | |||
| C. Wetzel and I. Akasaki | Raman and IR studies of GaN | |||
| Journal | Volume | Year | Pages Concerned | |
| Properties, Synthesis, Characterization, and Applications of Gallium Nitride and related Compounds Eds. J. Edgar, T. S. Strite, I. Akasaki, H. Amano and C. Wetzel(INSPEC, IEE, London, UK, 1999) | 23 | 1999 | 52 | |
| Author | Title of Article | |||
| C. Wetzel and I. Akasaki | Raman and IR studies of AlGaN | |||
| Journal | Volume | Year | Pages Concerned | |
| Properties, Synthesis, Characterization, and Applications of Gallium Nitride and related Compounds Eds. J. Edgar, T. S. Strite, I. Akasaki, H. Amano and C. Wetzel(INSPEC, IEE, London, UK, 1999) | 23 | 1999 | 143 | |
| Author | Title of Article | |||
| N. Kuwano | HRTEM characterization of GaN films on GaAs Properties, Processing and Application of Gallium Nitride and Related Semiconductors | |||
| Journal | Volume | Year | Pages Concerned | |
| Properties, Synthesis, Characterization, and Applications of Gallium Nitride and related Compounds Eds. J. Edgar, T. S. Strite, I. Akasaki, H. Amano and C. Wetzel(INSPEC, IEE, London, UK, 1999) | 23 | 1999 | 243-247 | |
| Author | Title of Article | |||
| Y. Takeda and M. Tabuchi | Sapphire substrates for growth of GaN and related compounds | |||
| Journal | Volume | Year | Pages Concerned | |
| Properties, Processing and Applications of Gallium Nitride and Related Semiconductors(EMIS Datareviews Series No. 23)Eds. J. H. Edgar, S. Strite, I. Akasaki, H. Amano and C. Wetzel (INSPEC, London, 1999) | 23 | 1999 | 381-385 | |
| Author | Title of Article | |||
| H. Amano and I. Akasaki | Optical properties of AlGaN | |||
| Journal | Volume | Year | Pages Concerned | |
| Properties, Processing and Applications of Gallium Nitride and Related Semiconductors(EMIS Datareviews Series No. 23)Eds. J. H. Edgar, S. Strite, I. Akasaki, H. Amano and C. Wetzel (INSPEC, London, 1999) | 23 | 1999 | 139-142 | |
| Author | Title of Article | |||
| H. Amano and I. Akasaki | X-ray diffraction characterization of GaN-based materials: triple axis diffractometry | |||
| Journal | Volume | Year | Pages Concerned | |
| Properties, Processing and Applications of Gallium Nitride and Related Semiconductors(EMIS Datareviews Series No. 23)Eds. J. H. Edgar, S. Strite, I. Akasaki, H. Amano and C. Wetzel (INSPEC, London, 1999) | 23 | 1999 | 264-272 | |
| Author | Title of Article | |||
| T. Takeuchi and I. Akasaki | GaInN quantum wells: piezoelectricity | |||
| Journal | Volume | Year | Pages Concerned | |
| Properties, Processing and Applications of Gallium Nitride and Related Semiconductors(EMIS Datareviews Series No.23)Eds. J. H. Edgar, S. Strite, I. Akasaki, H. Amano and C. Wetzel (INSPEC, London, 1999) | 23 | 1999 | 525 | |
| Author | Title of Article | |||
| 桑野 範之 | エピタキシャル層の構造と組織 | |||
| Journal | Volume | Year | Pages Concerned | |
| III族窒化物半導体 赤崎勇編著、培風館 | 1999 | 217-238 | ||
| Author | Title of Article | |||
| 天野 浩、赤崎 勇 | 第3章III族窒化物半導体の光学的・電気的特性 | |||
| Journal | Volume | Year | Pages Concerned | |
| “III族窒化物半導体"、アドバンストエレクトロニクスシリーズ、培風館、赤崎勇編著 | 1999 | 34-61 | ||
| Author | Title of Article | |||
| 天野 浩、赤崎 勇 | 第8章 有機金属化合物気相成長(MOVPE) | |||
| Journal | Volume | Year | Pages Concerned | |
| “III族窒化物半導体"、アドバンストエレクトロニクスシリーズ、培風館、赤崎勇編著 | 1999 | 147-164 | ||
| Author | Title of Article | |||
| 天野 浩 | 第15章 受光デバイス | |||
| Journal | Volume | Year | Pages Concerned | |
| “III族窒化物半導体"、アドバンストエレクトロニクスシリーズ、培風館、赤崎勇編著 | 1999 | 275-283 | ||
| Author | Title of Article | |||
| 天野 浩 | 第16章 電子デバイス | |||
| Journal | Volume | Year | Pages Concerned | |
| “III族窒化物半導体"、アドバンストエレクトロニクスシリーズ、培風館、赤崎勇編著 | 1999 | 285-293 | ||
| Author | Title of Article | |||
| 天野 浩,赤崎 勇 | サファイア基板上□族窒化物半導体成長における低温堆積層の効果と構造 | |||
| Journal | Volume | Year | Pages Concerned | |
| 応用物理 | 68 | 1999 | 65-71 | |
| Author | Title of Article | |||
| T. Takeuchi, T. Detchprohm, M. Iwaya, N. Hayashi, K. Isomura, K. Kimura, M. Yamaguchi, H. Amano, I. Akasaki, Yw. Kaneko, R. Shioda, S. Watanabe, T. Hidaka, Y. Yamaoka, Ys. Kaneko and N. Yamada | Improvement of far-field pattern in nitride laser diodes | |||
| Journal | Volume | Year | Pages Concerned | |
| Appl. Phys. Lett | 75 | 1999 | 2960-2962 | |
| Author | Title of Article | |||
| T. Kashima, R. Nakamura, M. Iwaya, H. Katoh, S. Yamaguchi, H. Amano, and I. Akasaki | Microscopic Investigation of Al0.43Ga0.57N on Sapphire | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 38 | 1999 | L363-365 | |
| Author | Title of Article | |||
| D. M. Hofmann, B. K. Meyer, F. Leiter, W. von Forster, H. Alves, N. Romanov, H. Amano and I. Akasaki | Optical Transitions of the Mg Acceptor in GaN | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 38 | 1999 | L1422-1424 | |
| Author | Title of Article | |||
| G. Steude, B. K. Meyer, A. Goldner, A. Hoffmann, A. Kaschner, F. Bechstedt, H. Amano and I. Akasaki | Strain Modification of GaN in AlGaN/GaN Epitaxial Films | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 38 | 1999 | L498-500 | |
| Author | Title of Article | |||
| T. Takeuchi, H. Amano and I. Akasaki | Theoretical study of orientational dependence of piezoelectric effects in wurtzite strained GaIn/GaN heterostructures and quantum wells | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 39 | 1999 | L390-392 | |
| Author | Title of Article | |||
| S. Yamaguchi, M. Kariya, S. Nitta, H. Amano and I. Akasaki | The effect of isoelectronic In-doping on the structural and optical properties of(Al)GaN | |||
| Journal | Volume | Year | Pages Concerned | |
| Ext. Abst. 1999 Int. Conf. SSDM | 1999 | 52-53 | ||
| Author | Title of Article | |||
| C. Wetzel, H. Amano and I. Akasaki | Piezoelectric polarization effects in GaInN/GaN heterostructures and some consequences for device design | |||
| Journal | Volume | Year | Pages Concerned | |
| Ext. Abst. 1999 Int. Conf. SSDM | 1999 | |||
| Author | Title of Article | |||
| C. Wetzel, T. Takeuchi, S. Yamaguchi, H. Amano and I. Akasaki | Spectroscopy of piezoelectric effects in GaInN/GaN quantum well structures and devices | |||
| Journal | Volume | Year | Pages Concerned | |
| Bull. Am. Phys. Soc. | 44 | 1999 | 1337 | |
| Author | Title of Article | |||
| C. Wetzel, T. Takeuchi, M. Iwaya, M. Kasumi, H. Amano and I. Akasaki | In-situ spectroscopic ellipsometry of GaN and AlGaInN growth by MOVPE | |||
| Journal | Volume | Year | Pages Concerned | |
| Bull. Am. Phys. Soc. | 44 | 1999 | 314 | |
| Author | Title of Article | |||
| A. Watanabe, H. Takahashi, T. Tanaka, H. Ota, K. Chikuma, H. Amano and I. Akasaki | Correlation between dislocation density and the macroscopic properties of GaN grown by metalorganic vapor phase epitaxy | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 1999 | L1159-L1162 | ||
| Author | Title of Article | |||
| C. Wetzel, T. Takeuchi, H. Amano, and I. Akasaki | Electric-field strength, polarization dipole, and multi-interface band offset n piezoelectric Ga1-xInxN/GaN quantum-well structures | |||
| Journal | Volume | Year | Pages Concerned | |
| The American Physical Society | 61 | 1999 | 2159-2163 | |
| Author | Title of Article | |||
| M. Kariya, S. Nitta, M. Kosaki, Y. Yukawa, S. Yamaguchi, H. Amno and I. Akasaki | Effect on GaN/Al0.17Ga0.83N and Al0.05Ga0.95N/Al0.17Ga0.83N Quantum Wells by Isoelectronic In-Doping during Metalorganic Vapor PhaseEpitaxy | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 39(2/2B) | 2000 | L143-L145 | |
| Author | Title of Article | |||
| S. Kamiyama, M. Iwaya, H. Amano and I. Akasaki | Performance of GaN-Based Semiconductor Laser with Spectral Broadening due to Compositional Inhomogeneity in GaInN Active Layer | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 39 | 2000 | L390-L392 | |
| Author | Title of Article | |||
| T. Takeuchi, H. Amano and I. Akasaki | Theoretical Study of Orientation Dependence of Piezoelectric Effects in Wurtzite Strained GaInN/GaN Heterostructures and Quantum Wells | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 39 | 2000 | L413-L416 | |
| Author | Title of Article | |||
| S. Yamaguchi, M. Kariya, S. Nitta, T. Takeuchi, C. Wetzel, H. Amano and I. Akasaki | Anomalous features in the optical properties of Al1-xInxN on GaN grown by metal organic vapor phase epitaxy | |||
| Journal | Volume | Year | Pages Concerned | |
| Appl. Phys. Lett. | 76(7) | 2000 | 876-878 | |
| Author | Title of Article | |||
| Y. Takeda, M. Tabuchi, H. Amano, and I. Akasaki | Characterization of Group-III Nitride Semiconductors by X-Ray CTR Scattering and Reflectivity Measurements | |||
| Journal | Volume | Year | Pages Concerned | |
| The Rigaku Journal | 17(2) | 2000 | 54-59 | |
| Author | Title of Article | |||
| M. Kariya, S. Nitta, S. Yamguchi, T. Kashima, H. Kato, H. Amano, and I. Akasaki | Structural characterization of Al1-xInxN lattice-matched to GaN | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Crystal Growth | 209 | 2000 | 419-423 | |
| Author | Title of Article | |||
| S. Nitta S. Yamaguchi, M. Kariya, M. Iwaya, T. Kashima, R. Nakamura, T. Detchprohm, S. Kamiyama, H. Amano, and I. Akasaki | Mass transport of GaN and reduction of threading dislocations | |||
| Journal | Volume | Year | Pages Concerned | |
| Proceedings of the Fourth Symposium on Atomic-scale Surface and Interface Dynamics | 2000 | 331-335 | ||
| Author | Title of Article | |||
| C. Wetzel, H. Amano, I. Akasaki, J. W. Ager III, I. Grzegory, M. Topf and B. K. Meyer | Localized vibrational modes in GaN:O tracing the formation of oxygen Dx-like centers under hydrostatic pressure | |||
| Journal | Volume | Year | Pages Concerned | |
| Physical Review B | 61(12) | 2000 | 8202-8206 | |
| Author | Title of Article | |||
| 田淵 雅夫, 竹田 美和, 竹内 哲也, 天野 浩, 赤崎 勇 | X線CTR散乱法およびX線反射率測定で見たサファイア基板上の窒化物成長過程(Characterization of Initial Growth Stage of GaInN Multilayered Structure by X-ray CTR Scattering and X-ray Reflectivity Method) | |||
| Journal | Volume | Year | Pages Concerned | |
| 表面科学 | 21/3 | 2000 | 162-168 | |
| Author | Title of Article | |||
| C. Wetzel, T. Detchprohm, T. Takeuchi, H. Amano, and I. Akasaki | Piezoelectric Polarization in the Radiative Centers of GaInN/GaN Quantum Wells and Devices | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Electronic Materials | 29/3 | 2000 | ||
| Author | Title of Article | |||
| 天野 浩、赤崎 勇 | サファイア基板上III族窒化物半導体成長における低温堆積層(Effect of Low-temperature Deposited Layer on the Growth of Group-III Nitrides on Sapphire) | |||
| Journal | Volume | Year | Pages Concerned | |
| 表面科学 | 21/3 | 2000 | 126-133 | |
| Author | Title of Article | |||
| M. Tabuchi, K. Hirayama, Y. Takeda, T. Takeuchi, H. Amano, I. Akasaki | Characterization of initial growth stage of GaInN multi-layered structure by X-ray CTR scattering method | |||
| Journal | Volume | Year | Pages Concerned | |
| Applied Surface Science | 159/160 | 2000 | 432-440 | |
| Author | Title of Article | |||
| N. Hayashi, S. Kamiyama, T. Takeuchi, M. Iwaya, H. Amano, I. Akasaki, S. Watanabe, Y. Kaneko and N. Yamada | Electrical conductivity of low temperature deposited Al0.1Ga0.9N interlayer | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys | 2000 | |||
| Author | Title of Article | |||
| T. Detchprohm, M. Yano, S. Sano, R. Nakamura, S. Mochiduki, T. Nakamura, H. Amano, and I. Akasaki | Heteroepitaxial Lateral Overgrowth of GaN on Periodically Grooved Substrates: A New Approach for Growing Low-Dislocation-Density GaN Single Crystal | |||
| Journal | Volume | Year | Pages Concerned | |
| Accepted for publication in Jpn. J. App. Phys. Lett | 2000 | |||
| Author | Title of Article | |||
| Isamu Akasaki | The Evolution of Group □ nitride semiconductors Seeking blue light emission | |||
| Journal | Volume | Year | Pages Concerned | |
| Mater Sci. Eng | B74 | 2000 | 101-106 | |
| Author | Title of Article | |||
| T. Sato, M. Iwaya, K. Isomura, T. Ukaki, S. Kamiyama, H. Amano and I. Akasaki | Theoretical Analysis of Optical Transverse-Mode Control on GaN-Based Laser Diodes | |||
| Journal | Volume | Year | Pages Concerned | |
| IEICE TRANS. Electron | E83-C/4 | 2000 | ||
| Author | Title of Article | |||
| C. Wetzel, H. Amano, and I. Akasaki | Piezoelectric Polarization in GaInN/GaN Heterostructures and Some Consequences for Devices Design | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys | 39 | 2000 | 2425-2427 | |
| Author | Title of Article | |||
| S. Yamaguchi, M. Kariya, S. Nitta, H. Amano, and I. Akasaki | The Effect of Isoelectronic In-Doping on the Structural and Optical Properties of (Al)GaN Grown by Metalorganic Vapor Phase Epitaxy | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys | 39(1/4B) | 2000 | 2385-2388 | |
| Author | Title of Article | |||
| C. Pernot, A. Hirano, M. Iwaya, T. Detchprohm, H. Amano and I. Akasaki | Solar-Blind UV Photodetectors Based on GaN/AlGaN p-i-n Photodiodes | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 39(2/5A) | 2000 | L387-L389 | |
| Author | Title of Article | |||
| Hirano, C. Pernot, M. Iwaya, T. Detchprohm, H. Amamo, and I. Akasaki | Demonstration of solar-blind AlxGa1-xN flame detector | |||
| Journal | Volume | Year | Pages Concerned | |
| IGRC2001 Proceedings International Gas Research Conference | 2000 | |||
| Author | Title of Article | |||
| I. Akasaki | Progress in Crystal Growth of Nitride Semiconductors | |||
| Journal | Volume | Year | Pages Concerned | |
| 10th International Conference on Metalorganic Vapor Phase Epitaxy | 2000 | 33-34 | ||
| Author | Title of Article | |||
| S. Yamaguchi, M. Kariya, S. Nitta, M. Kosaki, Y. Yukawa, H. Amano, and I. Akasaki | Control of Crystalline Quality of MOVPE-grown GaN and (Al, Ga)N/AlGaN MQW using In-doping and /or N2 carrier gas | |||
| Journal | Volume | Year | Pages Concerned | |
| 10th International Conference on Metalorganic Vapor Phase Epitaxy | 2000 | 337-338 | ||
| Author | Title of Article | |||
| M. Iwaya, S. Terao, N. Hayashi, T. Kashima, T. Dechprohm, H. Amano, I. Akasaki, A. Hirano, and C. Pernot | High-Quality AlxGa1-xN using Low Temperature-Interlayer and Its Application to UV Detector | |||
| Journal | Volume | Year | Pages Concerned | |
| Mat. Res. Soc. Symp. | 595 | 2000 | W110.1-W110.6 | |
| Author | Title of Article | |||
| H. Miyake, M. Yamaguchi, M. Haino, A. Motogaito, K. Hiramatsu, S. Nambu, Y. Kawaguchi, N. Sawaki, Y. Iyechika, T. Maeda, and I. Akasaki | Fabrication of GaN with Buried Tungsten (W) Structures Using Epitaxial Lateral Overgrowth (ELO) via LP-MOVPE | |||
| Journal | Volume | Year | Pages Concerned | |
| Mat. Res. Soc. Symp | 595 | 2000 | W2.3.1-W2.3.6 | |
| Author | Title of Article | |||
| S. Nitta, T. Kashima, M. Kariya, Y. Yukawa, S. Yamaguchi, H. Amano, and I. Akasaki | Mass Transport, Faceting and Behavior of Dislocations in GaN | |||
| Journal | Volume | Year | Pages Concerned | |
| Mat. Res. Soc. Symp | 595 | 2000 | W2.8.1-W2.8.6 | |
| Author | Title of Article | |||
| I. Akasaki, S. Kamiyama, T. Detchprohm, T. Takeuchi, and H. Amano | Growth of Crack-Free Thick AlGaN Layer and Its Application to GaN-Based Laser Diode | |||
| Journal | Volume | Year | Pages Concerned | |
| Mat. Res. Soc. Symp. | 595 | 2000 | W6.8.1-W6.8.6 | |
| Author | Title of Article | |||
| C. Wetzel, T. Takeuchi, H. Amano, and I. Akasaki | Spectroscopy in Polarized and Piezoelectric AlGaInN Heterostructures | |||
| Journal | Volume | Year | Pages Concerned | |
| Mat. Res. Soc. Symp | 595 | 2000 | W12.4.1-W12.4.12 | |
| Author | Title of Article | |||
| M. Iwaya, S. Terao, N. Hayashi, T. Kashima, H. Amano, and I. Akasaki | Realization of crack-free and high-quality thick AlxGa1-xN for UV optoelectronics using low-temperature interlayer | |||
| Journal | Volume | Year | Pages Concerned | |
| Applied Surface Science | 159-160 | 2000 | 405-413 | |
| Author | Title of Article | |||
| S. Yamaguchi, M. Kariya, S. Nitta, H. Amano, and I. Akasaki | Strain relief by In-doping and its effect on the surface and on the interface structures in (Al)GaN on sapphire grown by metalorganic vapor-phase epitaxy | |||
| Journal | Volume | Year | Pages Concerned | |
| Applied Surface Science | 159-160 | 2000 | 414-420 | |
| Author | Title of Article | |||
| S. Nitta, M. Kariya, T. Kashima, S. Yamaguchi, H. Amano, and I. Akasaki | Mass transport and the reduction of threading dislocation in GaN | |||
| Journal | Volume | Year | Pages Concerned | |
| Applied Surface Science | 159-160 | 2000 | 421-426 | |
| Author | Title of Article | |||
| T. Takeuchi, S. Lester, Bassile, G. Girolami, R. Twist, F. Mertz, M. Wong, R. Schneider, H. Amano, and I. Akasaki | Polarization control in nitride-based semiconductors | |||
| Journal | Volume | Year | Pages Concerned | |
| Proc. Int. Workshop on Nitride Semiconductors, IWN2000, Nagoya, Japan (IPAP, Tokyo, 2000) | 2000 | 137-140 | ||
| Author | Title of Article | |||
| S. Yamaguchi, M. Kariya, M. Kosaki, Y. Yukawa, S. Nitta, H. Amano and I. Akasaki | Effect of carrier gas on the properties of MOVPE-grown GaN and GaN/AlGaN MQWs:a comparison of H2 to N2 as a carrier gas | |||
| Journal | Volume | Year | Pages Concerned | |
| Proc. Int. Workshop on Nitride Semiconductors, IWN2000, Nagoya, Japan (IPAP, Tokyo, 2000) | 2000 | 141-143 | ||
| Author | Title of Article | |||
| M. Yano, T. Detchprohm, R. Nakamura, S. Sano, H. Amano, and I. Akasaki | Heteroepitaxy and characterization of GaN with Low Dislocation Density on Periodically Grooved Sapphire Substrate | |||
| Journal | Volume | Year | Pages Concerned | |
| Proc. Int. Workshop on Nitride Semiconductors, IWN2000, Nagoya, Japan (IPAP, Tokyo, 2000) | 2000 | 292-295 | ||
| Author | Title of Article | |||
| S. Nitta, Y. Yukawa, M. Kosaki, M. Iwaya, S. Yamaguchi, H. Amano, and I. Akasaki | Dynamical process of mass transport in GaN | |||
| Journal | Volume | Year | Pages Concerned | |
| Proc. Int. Workshop on Nitride Semiconductors, IWN2000, Nagoya, Japan (IPAP, Tokyo, 2000) | 2000 | 328-330 | ||
| Author | Title of Article | |||
| C. Wetzel, S. Kamiyama, H. Amano, and I. Akasaki | Excitation spectroscopy and level assignment in piezoelectric Ga1-xInxN/GaN quantum wells | |||
| Journal | Volume | Year | Pages Concerned | |
| Proc. Int. Workshop on Nitride Semiconductors, IWN2000, Nagoya, Japan (IPAP, Tokyo, 2000) | 2000 | 510-515 | ||
| Author | Title of Article | |||
| S. Terao, M. Iwaya, R. Nakamura, S. Kamiyama, H. Amano, and I. Akasaki | Effect of impurity doping on the mechanical properties of AlxGa1-xN ternary alloys | |||
| Journal | Volume | Year | Pages Concerned | |
| Proc. Int. Workshop on Nitride Semiconductors, IWN2000, Nagoya, Japan (IPAP, Tokyo, 2000) | 2000 | 640-643 | ||
| Author | Title of Article | |||
| M. Iwaya, R. Nakamura, S. Terao, T. Ukai, S. Kamiyama, H. Amano and I. Akasaki | High-efficiency GaN/AlxGa1-xN multi-quantum well light emitter grown on low-dislocation density AlxGa1-xN | |||
| Journal | Volume | Year | Pages Concerned | |
| Proc. Int. Workshop on Nitride Semiconductors, IWN2000, Nagoya, Japan (IPAP, Tokyo, 2000) | 2000 | 833-836 | ||
| Author | Title of Article | |||
| W. W. Chow, H. Amano and I. Akasaki | On the feasibility of fundamental-mode operation in unstable-resonator InGaN lasers | |||
| Journal | Volume | Year | Pages Concerned | |
| Proc. Int. Workshop on Nitride Semiconductors, IWN2000, Nagoya, Japan (IPAP, Tokyo, 2000) | 2000 | 895-898 | ||
| Author | Title of Article | |||
| R. Mouillet, C. Pernot, Hirano, M. Iwaya, T. Detchprohm, H. Amano, and I. Akasaki | Optical Property of an AlGaN/GaN Hetero-Bipolar-Phototransistor | |||
| Journal | Volume | Year | Pages Concerned | |
| Proc. Int. Workshop on Nitride Semiconductors, IWN2000, Nagoya, Japan (IPAP, Tokyo, 2000) | 2000 | 973-976 | ||
| Author | Title of Article | |||
| A. Hirano, C. Pernot, M. Iwaya, T. Detchprohm, H. Amano, and I. Akasaki | Solar-Blind AlGaN PIN Hetero Junction Photodiode | |||
| Journal | Volume | Year | Pages Concerned | |
| Proc. Int. Workshop on Nitride Semiconductors, IWN2000, Nagoya, Japan (IPAP, Tokyo, 2000) | 2000 | 911-914 | ||
| Author | Title of Article | |||
| S. Yamaguchi, M. Kariya, S. Nitta, H. Amano, I. Akasaki | The Effect of Isoelectronic In-Doping on the Structural and Optical Properties of (Al) GaN Grown by Metal Organic Vapor Phase Epitaxy | |||
| Journal | Volume | Year | Pages Concerned | |
| SOLID STATE DEVICES AND MATERIALS | 2000 | 52-53 | ||
| Author | Title of Article | |||
| I. Akasaki | Renaissance and Progress in Research on Nitride Semiconductors | |||
| Journal | Volume | Year | Pages Concerned | |
| Proceedings of The 19th Symposium on Materials Science and Engineering Research Center of Ion Beam Technology Hosei University | 2000 | |||
| Author | Title of Article | |||
| M Iwaya, S. Terao, N. Hayashi, T. Kashima, T. Detchprohm, H. Amano, I. Akasaki, A. Hirano, and C. Pernot | High-quality AlxGa1-xN using low temperature-interlayer and its application to UV detector | |||
| Journal | Volume | Year | Pages Concerned | |
| Mat. Res. Soc. Symp. | 595 | 2000 | W1.10.1-W1.10.6 | |
| Author | Title of Article | |||
| Y. Takeda, M. Tabuchi, H. Amano, and I. Akasaki | Characterization of Group-III Nitride Semiconductors by X-Ray CTR Scattering and Reflectivity Measurements | |||
| Journal | Volume | Year | Pages Concerned | |
| The Rigaku Journal | 17(20) | 2000 | ||
| Author | Title of Article | |||
| I. Akasaki | Progress in crystal growth of nitride semiconductors | |||
| Journal | Volume | Year | Pages Concerned | |
| Journal of Crystal Growth | 221 | 2000 | 231-239 | |
| Author | Title of Article | |||
| S. Yamaguchi, M. Kariya, S. Nitta, T. Kashima, M. Kosaki, Y. Yukawa, H. Amano, I. Akasaki | Control of crystalline quality of MOVPE-grown GaN and(Al, Ga)N/AlGaN MQW using In-doping and/or N2 carrier gas | |||
| Journal | Volume | Year | Pages Concerned | |
| Journal of Crystal Growth | 221 | 2000 | 327-333 | |
| Author | Title of Article | |||
| I. Akasaki | Renaissance and Progress in Nitride Semiconductors | |||
| Journal | Volume | Year | Pages Concerned | |
| Proc. Int. Workshop on Nitride Semiconductors IPAP Conf. Series 1 | 2001 | 1-6 | ||
| Author | Title of Article | |||
| S. Yamaguchi, M. Kariya, M. Kosaki, Y. Yukawa, S. Nitta, H. Amano, and I. Akasaki | Effect of carrier gas on the properties of MOVPE-grown GaN and GaN/AlGaN MQWs: a comparison of H2 to N2 as a carrier gas | |||
| Journal | Volume | Year | Pages Concerned | |
| Proc. Int. Workshop on Nitride Semiconductors IPAP Conf. Series 1 | 2001 | 141-143 | ||
| Author | Title of Article | |||
| M. Yano, T. Detchprohm, R. Nakamura, S. Sano, S. Mochizuki, T. Nakamura, H. Amano and I. Akasaki | Heteroepitaxy and characterization of GaN with low dislocation density on periodically grooved sapphire substrate | |||
| Journal | Volume | Year | Pages Concerned | |
| Proc. Int. Workshop on Nitride Semiconductors IPAP Conf. Series 1 | 2001 | 292-295 | ||
| Author | Title of Article | |||
| S. Nitta, Y. Yukawa, M. Kosaki, M. Iwaya, S. Yamaguchi, H. Amano and I. Akasaki | Dynamical Process of Mass Transport in GaN | |||
| Journal | Volume | Year | Pages Concerned | |
| Proc. Int. Workshop on Nitride Semiconductors IPAP Conf. Series 1 | 2001 | 328-330 | ||
| Author | Title of Article | |||
| S. Terao, M. Iwaya, R. Nakamura, S. Kamiyama, H. Amano, I. Akasaki | Effect of Impurity Doping on the Mechanical Properties of AlxGa1-xN Ternary Alloys | |||
| Journal | Volume | Year | Pages Concerned | |
| Proc. Int. Workshop on Nitride Semiconductors IPAP Conf. Series 1 | 2001 | 640-643 | ||
| Author | Title of Article | |||
| M. Iwaya, R. Nakamura, S. Terao, T. Ukai, S. Kamiyama, H. Amano, and I. Akasaki | High-Efficiency GaN/AlxGa1-xN Multi-Quantum Well Light Emitter Grown on Low-Dislocation Density AlxGa1-xN | |||
| Journal | Volume | Year | Pages Concerned | |
| Proc. Int. Workshop on Nitride Semiconductors IPAP Conf. Series 1 | 2001 | 833-836 | ||
| Author | Title of Article | |||
| T. Detchprohm, M. Yano, S. Sano, R. Nakamura, S. Mochizuki, T. Nakamura, H. Amano, and I. Akasaki | Heteroepitaxial Lateral Overgrowth of GaN on Periodically Grooved Substrates: A New Approach for Growing Low-Dislocation-Density GaN Single Crystals | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 20(2/1A/B) | 2001 | ||
| Author | Title of Article | |||
| M. Iwaya, S. Terao, S. Kamiyama, H. Amano, and I. Akasaki | Defect and stress control of AlxGa1-xN and fabrication of high-efficiency UV-LED | |||
| Journal | Volume | Year | Pages Concerned | |
| Proc. of the Fifth Symposium on Atomic-scale Surface and Interface Dynamics | 2001 | 77-78 | ||
| Author | Title of Article | |||
| S. Yamaguchi, M. Kariya, M. Kosaki, Y. Yukawa, S. Mochizuki, T. Nakamura, H. Amano, and I. Akasaki | Strain and crystalline quality of nitride semiconductors:GaN, AlGaN, AlInN and multiple quantum well structures | |||
| Journal | Volume | Year | Pages Concerned | |
| Proc. of the Fifth Symposium on Atomic-scale Surface and Interface Dynamics | 2001 | 91-96 | ||
| Author | Title of Article | |||
| M. Haino, A. Motogaito, H. Miyake, K. Hiramatsu, N. Sawaki, Y. Iyechika, T. Maeda, and I. Akasaki | Fabrication and characterization of high quality buried tungsten metal structure by epitaxial-lateral-overgrown GaN via low-pressure metalorganic vapor phase epitaxy | |||
| Journal | Volume | Year | Pages Concerned | |
| Proc. of the Fifth Symposium on Atomic-scale Surface and Interface Dynamics | 2001 | 105-108 | ||
| Author | Title of Article | |||
| S. Terao, M. Iwaya, R. Nakamura, S. Kamiyama, H. Amano and I. Akasaki | In-situ observation of fracture during grown of AlGaN on GaN | |||
| Journal | Volume | Year | Pages Concerned | |
| Proceedings of the Fifth Symposium on Atomic-scale Surface and Interface Dynamics | 2001 | 109-112 | ||
| Author | Title of Article | |||
| S. Nitta, Y. Yukawa, M. Kosaki, M. Iwaya, S. Yamaguchi, H. Amano, and I. Akasaki | Mass transport in nitrides | |||
| Journal | Volume | Year | Pages Concerned | |
| Proceedings of the Fifth Symposium on Atomic-scale Surface and Interface Dynamics | 2001 | 113-116 | ||
| Author | Title of Article | |||
| S. Terao, M. Iwaya, R. Nakamura, S. Kamiyama, H. Amano, and I. Akasaki | Fracture of AlxGa1-xN/GaN Heterostructure-Compositional and Impurity Dependence | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl, Phys | 40 | 2001 | L195-L197 | |
| Author | Title of Article | |||
| I. Akasaki and H. Amano | Semiconductors and Semimetals High brightness light emitting diodes Edited by G. B. Stringfellow and M. G. Craford | |||
| Journal | Volume | Year | Pages Concerned | |
| ACADEMIC PRESS | 1997 | 469 | ||
| Author | Title of Article | |||
| I. Akasaki and H. Amano | Semiconductors and Semimetals/Vol. 50 Gallium nitride (GaN)I, Edited by J. I. Pankove, T. D. Moustakas | |||
| Journal | Volume | Year | Pages Concerned | |
| ACADEMIC PRESS | 50 | 1997 | 503 | |
| Author | Title of Article | |||
| I. Akasaki and H. Amano | "Lasers" in Gallium Nitride (GaN)□ in Semiconductors and Semimetals, Vol 50, Chap. 15, ed. by J. I. Pankove and T. D. Moustakas, Academic Press, San Diego, U. S. A. 1998 | |||
| Journal | Volume | Year | Pages Concerned | |
| ACADEMIC PRESS | 50 | 1997 | 469 | |
| Author | Title of Article | |||
| I. Akasaki (Principal Editor) | Progress in Visible Light Emitting | |||
| Journal | Volume | Year | Pages Concerned | |
| Diodes Display and Imaging (Jpn. ed. ) | 8 | 2000 | ||
| Author | Title of Article | |||
| 天野 浩, 赤崎 勇 | 格子不整合系のエピタキシャル成長の欠陥制御 | |||
| Journal | Volume | Year | Pages Concerned | |
| 共立出版 | 第7章 | 2000 | ||