Summary of Research Project Results Under the JSPS FY2000
"Research for the future Program"



1.Research Institution Kyushu University
 
2.Research Area Physical and Engineering Science
 
3.Research Field Atomic-scale Surface and Interface Dynamics
 
4.Term of Project FY1996〜FY2000
 
5.Project Number 96P00202
 
6.Title of Project Dynamic behavior of silicon atoms, lattice defects and impurities near silicon melt-crystal interface

7.Projetct Leader
Name Institution,Department Title of Position
Nobuyuki Imaishi Kyushu University, Institute of Advanced Material Study Professor

8.Core Members

Names Institution,Department Title of Position
Koichi Kakimoto Kyushu University, Institute of Advanced Material Study Associate Professor
Teruaki Motooka Kyushu University, Graduate School of Engineering Professor
Keigo Hoshikawa Shinsyu University, Faculty of Education Professor

9.Cooperating Researchers

Names Institution,Department Title of Position
Ryuichiro Oshima Osaka Prefectural University, Institute of Advanced Science Professor
Huang, Xinming JSPS Post Doctoral Researcher (Shinshu University)  
Wang, Yuren JSPS Post Doctoral Researcher (Kyushu University)  

10.Summary of Research Results

1) Macro-scale simulation analyzed convective heat-mass transfer in a small Cz furnace and the effective usage of magnetic field for controlling melt convection and oxygen concentration. 2) Large scale Molecular Dynamics simulations with the Tersoff potential revealed (1) the solid/liquid Si interface is a rough surface composed of {111} facets in the [001] pulling, while it is essentially a flat (111) surface in the [111] pulling; (2) the melt growth in the [001] direction occurs by attaching Si atoms in the liquid at the kink sites associated with the {111} facets, while in the [111] direction double-layered two-dimensional nucleation is first created and followed by double-step layer-by-layer growth, (3) there is a transition layer at the s/l interface with a thickness of approximately 1 nm, (4) point defect formation can be initiated by 5-membered rings created at the interfaces. 3) Precise measurements of thermophysical properties of silicon melt revealed that there is no density anomaly near melting temperature. Segregation coefficient of oxygen was determined to be 0.8±0.1. MD simulations were effectively applied to determine diffusivity of oxygen in melt and those of point defects in crystal. 4) Mass transfer rate of oxygen impurity was analyzed experimentally and numerically. 5) An in-situ observation of the melting of silicon using X-ray diffraction topography revealed the dislocation effects on the shape of crystal-melt interface, i.e., in low dislocation density silicon crystal, uniform melting took place with a flat interface, however, in high dislocation density silicon, inhomogeneous melting caused by the melting temperature lowering around a dislocation took place and interface becomes rough. 6) In-situ observation of melt-crystal interface by a High Resolution Transmission Electron Microscope confirmed the atomic scale dynamics of the crystal growth predicted by the MD simulations. A time -resolved Field Emission Microscope was developed and measured surface diffusion coefficient of B atoms on Si surface. 7) Based on the studies of dislocation behavior, a new method was developed to grow large dislocation free silicon crystals without using the Dash-necking.

11.Key Words

(1)silicon crystal growth、(2)melt-crystal interface、(3)in-situ observation techniques
(4)micro-scale simulations、(5)macro-scale simulations、(6)point defects
(7)interface shape、(8)behavior of oxygen impurity、(9)properties of silicon melt

12.References

[Reference Articles]
Author Title of Article
Z. Niu, K. Mukai, Y. Shiraishi, T. Hibiya, K. Kakimoto, M. Koyama Effect of oxygen partial pressure on the surface tension of molten silicon
Journal Volume Year Pages Concerned
J. Jpn. Assoc. Crystal Growth 23 1996 374-381

Author Title of Article
K. Terashima, H. Nakanishi, S. Maeda, K. Abe, K. Hoshikawa and S. Kimura New Approach to CZ Si Growth-Fundamental Properties of Si Melt Doped with Impurities-
Journal Volume Year Pages Concerned
Proc. the 145th Committee on Processing and Characterization of Crystals   1996 64-71

Author Title of Article
K. Abe, T. Matsumoto, S. Maeda H. Nakanishi, K. Hoshikawa, K. Terashima Oxygen Solubilities in Si Melts:influence of boron addition
Journal Volume Year Pages Concerned
J. Crystal Growth 181 1997 41-47

Author Title of Article
K. Kakimoto H. Ozoe *Micro segregation of oxygen at a solid-liquid interface in silicon
Journal Volume Year Pages Concerned
Proc. the 1st Symp. on Atomic-scale Surface and Interface Dynamics, March 13-14, Tokyo   1997 19-24

Author Title of Article
K. Terashima, K. Abe, S. Maeda H. Nakanishi *Influence of boron addition on silicon melt -Oxygen solubility and evaporation from silicon melt surface-
Journal Volume Year Pages Concerned
Proc. the 1st Symp. on Atomic-scale Surface and Interface Dynamics, March 13-14, Tokyo   1997 31-34

Author Title of Article
T. Motooka *Molecular dynamics simulations of crystal growth from melted silicon
Journal Volume Year Pages Concerned
Proc. the 1st Symp. on Atomic-scale Surface and Interface Dynamics, March 13-14, Tokyo   1997 25-29

Author Title of Article
T. Motooka, S. Harada, M. Ishimaru Homogeneous amorphization in high-energy ion implanted Si
Journal Volume Year Pages Concerned
Phys. Rev. Lett. 78 1997 2980-2981

Author Title of Article
M. Ishimaru, S. Munetoh T. Motooka *Generation of amorphous silicon structures by rapid quenching: A molecular-dynamics study
Journal Volume Year Pages Concerned
Phys. Rev. B56 1997 15 133-15 138

Author Title of Article
K. Kakimoto Convective instability in metalic molten silicon
Journal Volume Year Pages Concerned
J. Phys. Soc. Jpn. 52 1997 90-96

Author Title of Article
K. Kakimoto, M. Eguchi, H. Ozoe Bubble formation in silicon-quartz interface
Journal Volume Year Pages Concerned
The Science Reports of The Research Institutes Tohoku University, Series A 43 1997 47-49

Author Title of Article
Z. Niu, K. Mukai, Y. Shiraishi, T. Hibiya, K. Kakimoto, M. Koyama Effect of oxygen and temperature on the surface tension of molten silicon
Journal Volume Year Pages Concerned
J. Jpn. Assoc. Crystal Growth 24 1997 369-378

Author Title of Article
K. Kakimoto, M. Eguchi, H. Ozoe *Use of an inhomogeneous magnetic field for silicon crystal growth
Journal Volume Year Pages Concerned
J. Crystal Growth 180 1997 442-449

Author Title of Article
M. Watanabe, K. Kakimoto, M. Eguchi, T. Hibiya Modification of heat and mass transfers and their effect on the crystal-melt interface shape of Si single crystal during Czochralski crystal growth
Journal Volume Year Pages Concerned
Jpn. J. Appl. Phys. 36 1997 6181-6186

Author Title of Article
K. Kakimoto, H. Noguchi, M. Eguchi Sensitivity of oxygen sensors in silicon melt to temperature fluctuation
Journal Volume Year Pages Concerned
J. Electrochemical Society. 144 1997 4045-4049

Author Title of Article
M. Akamatsu, K. Kakimoto H. Ozoe *Effect of crucible rotation on the melt convection and the structure in a Czochralski method
Journal Volume Year Pages Concerned
Transport Phenomena in Thermal Science and Process Engineering 3 1997 637-642

Author Title of Article
K. Kakimoto H. Ozoe *Magnetic field effects on melt convection during crystal growth
Journal Volume Year Pages Concerned
Proc. the 12th KACG Technical Meeting and the 4th Korea-Japan Electronic Materials Growth Symp.   1997 187-196

Author Title of Article
S. Maeda, M. Kato, K. Abe, H. Nakanishi, K. Hoshikawa K. Terashima *Temperature Variation of the Surface of a Silicon Melt Due to Evaporation of Chemical Species I. Antimony Addition
Journal Volume Year Pages Concerned
J. Electrochemical Society 144 1997 3185-3188

Author Title of Article
S. Maeda, M. Kato K. Abe, H. Nakanishi K. Hoshikawa K. Terashima *Analysis of Deposits Evaporated from Boron Doped Silicon Melt
Journal Volume Year Pages Concerned
Jpn. J. Appl. Phys. 36 1997 L971-L974

Author Title of Article
W. C. Won, K. Kakimoto H. Ozoe *Transient analysis of melt flow under inhomogeneous magnetic fields
Journal Volume Year Pages Concerned
Proc. The 2nd Symp. on Atomic-Scale Surface and Interface Dynamics, 26 February 1998   1997 57-62

Author Title of Article
N. Imaishi, S. Yasuhiro *Three dimensional oscillatory flow in silicon melt half-zone
Journal Volume Year Pages Concerned
Proc. The 2nd Symp. on Atomic-Scale Surface and Interface Dynamics, 26 February 1998   1997 63-68

Author Title of Article
K. Hoshikawa, S. Sakai X. Huang *Measurement of oxygen dissolution rate from silica glass to silicon melt with sessile drop method
Journal Volume Year Pages Concerned
Proc. The 2nd Symp. on Atomic-Scale Surface and Interface Dynamics, 26 February 1998   1997 69-74

Author Title of Article
K. Hoshikawa, S. Sakai X. Huang *Analysis on oxygen evaporation and dissolution rate concerning with CZ Si crystal growth
Journal Volume Year Pages Concerned
Proc. The 2nd Symp. on Atomic-Scale Surface and Interface Dynamics, 26 February 1998   1997 75-80

Author Title of Article
K. Terashima, H. Nakanishi, K. Abe S. Maeda *Variation of silicon melt properties -influence of boron addition-
Journal Volume Year Pages Concerned
Proc. The 2nd Symp. on Atomic-Scale Surface and Interface Dynamics, 26 February 1998   1997 81-84

Author Title of Article
K. Kakimoto, S. Kikuchi, H. Ozoe *Molecular dynamics simulation of oxygen in silicon melt
Journal Volume Year Pages Concerned
Proc. The 2nd Symp. on Atomic-Scale Surface and Interface Dynamics, 26 February 1998   1997 85-90

Author Title of Article
T. Motooka, M. Ishimaru, S. Munetoh *Defect formation during crystal growth from melted silicon
Journal Volume Year Pages Concerned
Proc. The 2nd Symp. on Atomic-Scale Surface and Interface Dynamics, 26 February 1998   1997 91-96

Author Title of Article
F. Watanabe, T. Motooka *Atomic scale dynamics of silicon at high temperatures
Journal Volume Year Pages Concerned
Proc. The 2nd Symp. on Atomic-Scale Surface and Interface Dynamics, 26 February 1998   1997 97-102

Author Title of Article
S. H. Hahn, T. Tsukada, M. Hozawa, S. Maruyama, N. Imaishi, S. Kitagawa Global analysis of heat transfer in Si CZ furnace with specular and diffuse surfaces
Journal Volume Year Pages Concerned
J. Crystal Growth 191 1998 413-420

Author Title of Article
R. Ohshima, F. Hori, T. Kamino T. Yaguchi *In-situ High-Resolution Electron Microscopy of melting-freezing process of silicon
Journal Volume Year Pages Concerned
J. Jpn. Assoc. Crystal Growth 25 1998 201-206

Author Title of Article
R. Ohshima, F. Hori, M. Komatsu, H. Mori *Formation of stacking fault tetrahedra in silicon rapidly solidified from melt
Journal Volume Year Pages Concerned
Jpn. J. Appl. Phys. 37 1998 L1430-L1432

Author Title of Article
T, Motooka *The role of defects during amorphization and crystallization processes in ion implanted Si
Journal Volume Year Pages Concerned
J. Mater. Sci. & Eng. A253/1-2 1998 42-49

Author Title of Article
M. Ishimaru, S. Munetoh, T. Motooka, K. Moriguchi, A. Shintani *Behavior of impurity atoms during crystal growth from melted silicon:carbon atoms
Journal Volume Year Pages Concerned
J. Crystal Growth 194 1998 178-188

Author Title of Article
F. Watanabe, M. Arita, T. Motooka, K. Okano, T. Yamada *Diamond tip arrays for parallel lithography and data storage
Journal Volume Year Pages Concerned
Jpn. J. Appl. Phys 194 1998 L562-L564

Author Title of Article
M. Ishimaru, S. Munetoh, T. Motooka, K. Moriguchi, A. Shintani *Molecular-dynamics studies on defect formation processes during crystal growth of silicon from melt
Journal Volume Year Pages Concerned
Phys. Rev B58 1998 12583-12585

Author Title of Article
K. Kakimoto, H. Ozoe *Heat and mass transfer during crystal growth
Journal Volume Year Pages Concerned
Computational Materials Science 10 1998 127-133

Author Title of Article
M. Akamatsu, K. Kakimoto H. Ozoe * Numerical computation for the secondary convection in a Czochralski crystal growing system with a rotating crucible and a static crystal rod
Journal Volume Year Pages Concerned
J. Materials Processing & Manufacturing Science 15 1998 329-348

Author Title of Article
K. Kakimoto, H. Ozoe *Segregation of Oxygen at a solid/liquid interface in silicon
Journal Volume Year Pages Concerned
J. Electrochem. Soc. 145 1998 1692-1695

Author Title of Article
K. Kakimoto, H. Suenaga, H. Ozoe *Physical Properties of silicon estimated by molecular dynamics under a condition of constant temperature and pressure
Journal Volume Year Pages Concerned
Rep. Advanced Material Study, Kyushu Univ. 12 1998 7-10

Author Title of Article
H. Fukui, K. Kakimoto, H. Ozoe *The convection under an axial magnetic field in a Czochralski configuration, Advanced Computational Methods in Heat Transfer
Journal Volume Year Pages Concerned
Heat Transfer V. 27 1998 135-144

Author Title of Article
K. Kakimoto Heat and mass transfer in silicon melt under magnetic fields
Journal Volume Year Pages Concerned
Book of the First International School on Crystal Growth Technology   1998 172-186

Author Title of Article
X. Wu, K. Kakimoto, H. Ozoe, Z. Guo *Numerical study of natural convection in Czochralski crystallization
Journal Volume Year Pages Concerned
The Chemical Engineering Journal 71 1998 183-189

Author Title of Article
H. Tomonari, M. Iwamoto, K. Kakimoto, H. Ozoe, K. Suzuki, T. Fukuda *Standing-oscillatory natural convection computed for molten silicon in a zochralski configuration
Journal Volume Year Pages Concerned
The Chemical Engineering Journal 71 1998 191-200

Author Title of Article
Y. Yamanaka, K. Kakimoto, H. Ozoe, S. W. Churchill Rayleigh-Benard oscillatory natural convection of liquid gallium heated from below
Journal Volume Year Pages Concerned
The Chemical Engineering Journal 71 1998 201-205

Author Title of Article
S. Nakamura, T. Hibiya, K. Kakimoto, N. Imaishi, S. Nishizawa, A. Hirata, K. Mukai, S. Yoda, T. Morita Temperature fluctuations of the Marangoni flow in a liquid bridge of molten silicon under microgravity on board the TR1-A-4 rocket
Journal Volume Year Pages Concerned
J. Crystal Growth 186 1998 85-94

Author Title of Article
M. Akamatsu, K. Kakimoto. H. Ozoe Temperature fluctuations of the Marangoni flow in a liquid bridge of molten silicon under microgravity on board the TR1-A-4 rocket
Journal Volume Year Pages Concerned
J. Crystal Growth 186 1998 85-94

Author Title of Article
S. Maeda, M. Kato, K. Abe, H. Nakanishi, K. Hoshikawa K. Terashima *Evaporation of Oxygen Bearing Species from Boron Doped Silicon Melt
Journal Volume Year Pages Concerned
J. Electrochemical Society 145 1998 2548-2552

Author Title of Article
S. Maeda, M. Kato, K. Abe, H. Nakanishi, K. Hoshikawa K. Terashima *Oxygen Concentration in Czochralski Silicon Crystals depending on Silicon Monoxide Evaporation from Boron Doped Silicon Melt
Journal Volume Year Pages Concerned
J. Crystal Growth 192 1998 117-124

Author Title of Article
S. Maeda, K. Takeuchi, M. Kato, K. Abe, H. Nakanishi, K. Hoshikawa K. Terashima *Morphology variations on inner surface of silica crucibles depending on oxygen concentration in silicon melts
Journal Volume Year Pages Concerned
J. Crystal Growth 194 1998 70-75

Author Title of Article
K. Abe, T. Matsumoto, K. Terashima, S. Maeda, H. Nakanishi, K. Hoshikawa *Oxygen Solubilities in Si Melts:influence of carbon addition
Journal Volume Year Pages Concerned
J. Electrochemical Society 145 1998 319-322

Author Title of Article
K. Abe, T. Matsumoto, S. Maeda, H. Nakanishi, K. Terashima *Fused quartz dissolution rate in silicon melts: influence of boron addition
Journal Volume Year Pages Concerned
J. Crystal Growth 186 1998 557-564

Author Title of Article
H. Nakanishi, K. Nakazato, S. Asaba, K. Abe, S. Maeda, K. Terashima *Ring Depression technique for measuring surface tension of molten germanium
Journal Volume Year Pages Concerned
J. Crystal Growth 187 1998 391-396

Author Title of Article
H. Nakanishi, K. Nakazato S. Asaba K. Abe, S. Maeda, K. Terashima *Temperature dependence of density of molten germanium measured by a newly developed Archimedian technique
Journal Volume Year Pages Concerned
J. Crystal Growth 191 1998 711-717

Author Title of Article
K. Terashima, K. Abe, S. Maeda H. Nakanishi *Influence of boron addition into silicon melt on oxygen atom behavior in Cz pulling system:
Journal Volume Year Pages Concerned
J. Crystal Growth 191 1998 711-717

Author Title of Article
X. Huang, K. Saitou, S. Sakai, K Terashima K. Hoshikawa *Analysis on oxygen transportation process concerning with CZ Si crystal growth by sessile drop method
Journal Volume Year Pages Concerned
Jpn. J. Appl. Phys. 37 1998 L193-L195

Author Title of Article
X. Huang, K. Saitou, S. Sakai, K. Terashima, K. Hoshikawa *Analysis of oxygen evaporation rate and dissolution rate concerning with CZ Si crystal growth: Effect of Ar pressure
Journal Volume Year Pages Concerned
Jpn. J. Appl. Phys. 37 1998 3188-3193

Author Title of Article
X. Huang, T. Nakazawa, K. Terashima, K. Hoshikawa *Silicon crystal growth under equilibrium condition of SiO2-Si-SiO system: Equilibrium oxygen segregation coefficient
Journal Volume Year Pages Concerned
Jpn. J. Appl. Phys. 37 1998 L1504-L1507

Author Title of Article
N. Imaishi, C. J. Jing, S. Yasuhiro, Y. Akiyama, M. Li *Transport phenomena in Cz furnace
Journal Volume Year Pages Concerned
Proc. 3rd Symp. on Atomic-Scale Surface and Interface Dynamics, March 4-5 1999, Fukuoka.   1999 221-224

Author Title of Article
T. Motooka, S. Munetoh, K. Nishihira *Molecular dynamics simulations of solid phase epitaxy of Si
Journal Volume Year Pages Concerned
Proc. 3rd Symp. on Atomic-Scale Surface and Interface Dynamics, March 4-5 1999, Fukuoka.   1999 225-228

Author Title of Article
R. Oshima, F. Hori, M. Komatsu H. Mori, T. Kamino Y. Yaguchi *In situ TEM observation of melting of silicon
Journal Volume Year Pages Concerned
Proc. 3rd Symp. on Atomic-Scale Surface and Interface Dynamics, March 4-5 1999, Fukuoka.   1999 229-234

Author Title of Article
F. Watanabe, S. Hirayama, K. Nishihira, T. Motooka *Silicon surface diffusion studied by field emission current fluctuations method
Journal Volume Year Pages Concerned
Proc. 3rd Symp. on Atomic-Scale Surface and Interface Dynamics, March 4-5 1999, Fukuoka.   1999 235-239

Author Title of Article
Y. Wang K. Kakimoto *The dislocation behaviour in the vicinity of molten zone: an X-ray topography study on the melting of silicon
Journal Volume Year Pages Concerned
Proc. 3rd Symp. on Atomic-Scale Surface and Interface Dynamics, March 4-5 1999, Fukuoka.   1999 241-246

Author Title of Article
K. Kakimoto H. Ozoe *Oxygen distribution at a solid-liquid interface of silicon under transverse magnetic fields
Journal Volume Year Pages Concerned
Proc. 3rd Symp. on Atomic-Scale Surface and Interface Dynamics, March 4-5 1999, Fukuoka.   1999 247-252

Author Title of Article
X. Huang, K. Hoshikawa *In-situ observation of the interface at the Si melt/silica glass interface
Journal Volume Year Pages Concerned
Proc. 3rd Symp. on Atomic-Scale Surface and Interface Dynamics, March 4-5 1999, Fukuoka.   1999 253-257

Author Title of Article
K. Terashima, H. Nakazato H. Nakanishi *Problems of Archimedean technique for measuring silicon melt density
Journal Volume Year Pages Concerned
Proc. 3rd Symp. on Atomic-Scale Surface and Interface Dynamics, March 4-5 1999, Fukuoka.   1999 259-262

Author Title of Article
T. Taishi, X. Huang, K. Tearashima K. Hoshikawa *Segregation phenomena at solid-liquid interface of silicon crystal growth with heavy boron doping
Journal Volume Year Pages Concerned
Proc. 3rd Symp. on Atomic-Scale Surface and Interface Dynamics, March 4-5 1999, Fukuoka.   1999 263-267

Author Title of Article
K. Terashima, M. Kato *Silicon melt convection in crucible with boron addition
Journal Volume Year Pages Concerned
Proc. 3rd Symp. on Atomic-Scale Surface and Interface Dynamics, March 4-5 1999, Fukuoka.   1999 269-272

Author Title of Article
C. J. Jing, N. Imaishi, S. Yasuhiro, Y. Miyazawa *Three dimensional numerical simulation of spoke pattern in oxide melt
Journal Volume Year Pages Concerned
J. Crystal Growth 200 1999 204-212

Author Title of Article
H. Nishizawa, F. Hori R. Oshima *Lattice defects in silicon rapidly solidified from the melt
Journal Volume Year Pages Concerned
Physica B 273-4 1999 383-386

Author Title of Article
Y. Mizukoshi, R. Oshima, Y. Maeda, Y. Nagata Preparation of Platinum Nanoparticles by Sonochemical Reduction of the Pt(II)Ion
Journal Volume Year Pages Concerned
Langmuir 15 1999 2733-2737

Author Title of Article
R. Oshima, T. A. Yamamoto, Y. Mizukoshi, Y. Nagata, Y. Maeda Electron Microscopy of Noble Metal Alloy Nanoparticles Prepared by Sonochemical Methods
Journal Volume Year Pages Concerned
Nanostructured Materials 12 1999 111-114

Author Title of Article
F. Hori, A. Morita and R. Oshima Radiation-enhanced precipitation in FeCu(C) alloys studied by electron microscopy
Journal Volume Year Pages Concerned
Jpn. Soc. Electron Microscopy 48 1999 585-589

Author Title of Article
T. Fujimoto, Y. Mizukoshi, Y. Maeda, Y. Nagata, R. Oshima Study on Sonochemical Preparation and Phase Stability of Binary Alloy Nanoparticles from Aqueous Solution
Journal Volume Year Pages Concerned
Jpn. Soc. Electron Microscopy 48 1999 585-589

Author Title of Article
F. Hori, A. Morita, H. Nishizawa R. Oshima Formation of copper precipitate in FeCu and FeCuC alloys with irradiation
Journal Volume Year Pages Concerned
Proc. Int. Conf. on Solid-Solid Phase Transformations '99   1999 429-432

Author Title of Article
F. Hori, T. Chijiiwa, R. Oshima, T. Hisamatsu Positron annihilation study of dopant effects on proton-irradiation defect in silicon
Journal Volume Year Pages Concerned
Physica B 273-4 1999 480-484

Author Title of Article
F. Watanabe, M. Arita, T. Motooka, K. Okano, T. Yamada *Diamond Tip Arrays for Parallel Processing of Microelectromechanical Systems
Journal Volume Year Pages Concerned
Proc. of Foresight Institute Meeting   1999  

Author Title of Article
R. Durikovic, T. Motooka *Modeling Material Behavior: Molecular Dynamics Simulation and Visualization
Journal Volume Year Pages Concerned
Proc. of Int. Conf. on Shape Modeling and Applications, IEEE Computer Society Press   1999 186-191

Author Title of Article
M. Ishimaru T. Motooka *Molecular dynamics simulations of crystal growth from melted silicon: defect formation processes
Journal Volume Year Pages Concerned
Mat. Res. Symp. Proc 538 1999 247-250

Author Title of Article
K. Kakimoto, S. Kikuchi H. Ozoe *Molecular dynamics simulation of oxygen in silicon melt
Journal Volume Year Pages Concerned
J. Crystal Growth 198 1999 114-119

Author Title of Article
K. Kakimoto, H. Fukui H. Ozoe *Effect of the z-axis magnetic field on the Cz crystal growth melt New apprecations of magnetic fields for material processing
Journal Volume Year Pages Concerned
J. Iron Steel Inst. Jpn.   1999 221-226

Author Title of Article
K. Kakimoto, T. Umehara, H. Ozoe *Transport mechanism of point deffects in silicon crystals estimeted by Molecular Dynamics
Journal Volume Year Pages Concerned
Rep. Advanced Material Study, Kyushu Univ. 13 1999 87-91

Author Title of Article
K. Kakimoto *Macroscopic and microscopic mass transfer in silicon Czochralski method
Journal Volume Year Pages Concerned
Korean Association of Crystal Growth 9 1999 381-383

Author Title of Article
M. Watanabe, K. W. Yi, T. Hibiya K. Kakimoto Direct observation and numerical simulation of molten silicon flow during crystal growth under magnetic fields by X-ray radiography and large-scale computation
Journal Volume Year Pages Concerned
Progress in Crystal Growth and Characterization of Materials 38 1999 215-238

Author Title of Article
Y. Wang, K. Kakimoto *Dislocation effect on crystal-melt interface: an in situ observation of the melting of silicon
Journal Volume Year Pages Concerned
J. Crystal Growth 208 1999 303-312

Author Title of Article
Y. C. Won, K. Kakimoto, H. Ozoe *Transient three-dimensional flow characteristics of Si melt in a cusp-shaped magnetic field
Journal Volume Year Pages Concerned
Numerical Heat Transfer, Part A 36 1999 551-561

Author Title of Article
H. Nakanishi, K. Nakazato, S. Asaba, K. Abe, S. Maeda, K. Terashima *Temperature dependence of density of molten germanium and silicon measured by a newly developed Archimedian technique
Journal Volume Year Pages Concerned
J. Crystal Growth 203 1999 75-79

Author Title of Article
K. Terashima S. Nishimura *Variation of silicon melt convection in a crucible with boron addition
Journal Volume Year Pages Concerned
Solid State Phenomena 69-70 1999 473-478

Author Title of Article
T. Taishi, X. Huang, M. Kubota, T. Kajigaya, T. Fukami, K. Hoshikawa *Heavily Boron-doped Silicon Single Crystal Growth: Boron Segregation
Journal Volume Year Pages Concerned
Jpn. J. Appl. Phys. 38 1999 L223-L225

Author Title of Article
X. Huang, H. Kishi, S. Oishi, S. Sakai, H. Watanabe, K. Sanpei K. Hoshikawa *Expansion behavior of bubbles in silica glass concerning Czochralski Si growth
Journal Volume Year Pages Concerned
Jpn. J. Appl. Phys. 38 1999 L353-L355

Author Title of Article
S. Sakai, X. Huang, Y. Okano K. Hoshikawa *Development of Sessile drop method concerning Czochralski Si growth
Journal Volume Year Pages Concerned
Jpn. J. Appl. Phys. 38 1999 1847-1851

Author Title of Article
S. Ooishi, H. Kishi, X. Huang, K. Hoshikawa, K. Sanpei, H. Watanabe *Behavior of bubbles in silica glass for use in silicon crystal growth as crucible
Journal Volume Year Pages Concerned
J. Jpn. Assoc. Crystal Growth. 26 1999 147-152

Author Title of Article
X. Huang, K. Terashima, K. Hoshikawa *SiO Vapor Pressure in an SiO2 Glass/Si Melt/SiO Gas Equilibrium System
Journal Volume Year Pages Concerned
Jpn. J. Appl. Phys. 38 1999 L1153-L1155

Author Title of Article
X. Huang, K. Hoshikawa *Silica dissolution and oxygen segregation concerning CZ-Si crystal growth
Journal Volume Year Pages Concerned
J. Jpn. Assoc. Crystal Growth. 26 1999 225-234

Author Title of Article
K. Hoshikawa, X. Huang, T. Taishi, T. Kajigaya, T. Iino *Dislocation-Free Czochralski Silicon Crystal Growth without the Dislocation-Elimination-Necking Process
Journal Volume Year Pages Concerned
Jpn. J. Appl. Phys. 38 1999 L1369-L1371

Author Title of Article
K. Nishihira T. Motooka *Molecular dynamics simulations of self-interstitial formation processes during crystal growth from melted Si
Journal Volume Year Pages Concerned
Proc. of the 4rth Symp. on Atomic-scale Surface and Interface Dynamics, March, 1-2, Tsukuba.   2000 81-84

Author Title of Article
R. Oshima, H. Nishizawa, F. Hori *Study on melting and rapidly solidified substructures of silicon by TEM
Journal Volume Year Pages Concerned
Proc. of the 4rth Symp. on Atomic-scale Surface and Interface Dynamics, March, 1-2, Tsukuba.   2000 85-88

Author Title of Article
K. Kakimoto *Crucible and crystal rotation effects on oxygen distribution at an interface between solid and liquid of silicon under transverse magnetic fields
Journal Volume Year Pages Concerned
Proc. of the 4rth Symp. on Atomic-scale Surface and Interface Dynamics, March, 1-2, Tsukuba.   2000 89-94

Author Title of Article
Y. Wang, K. Kakimoto *The shape of solid-melt interface estimeted from in-situ observation
Journal Volume Year Pages Concerned
Proc. of the 4rth Symp. on Atomic-scale Surface and Interface Dynamics, March, 1-2, Tsukuba.   2000 95-100

Author Title of Article
X. Huang, T. Taishi, I. Yonenaga K. Hoshikawa *Dislocation-free B-doped Si crystal growth without the Dash-necking process in the Czochralski method: Dislocation behavior in the growth interface
Journal Volume Year Pages Concerned
Proc. of the 4rth Symp. on Atomic-scale Surface and Interface Dynamics, March, 1-2, Tsukuba.   2000 101-106

Author Title of Article
K. Terashima, K. Kanno *Silicon melt density-Problems of Archimedean Technique-
Journal Volume Year Pages Concerned
Proc. of the 4rth Symp. on Atomic-scale Surface and Interface Dynamics, March, 1-2, Tsukuba.   2000 107-112

Author Title of Article
H. Nakanishi, K. Terashima *Surface tension variation of silicon melts by adding boron
Journal Volume Year Pages Concerned
Proc. of the 4rth Symp. on Atomic-scale Surface and Interface Dynamics, March, 1-2, Tsukuba.   2000 113-117

Author Title of Article
M. W. Li, N. Imaishi *Global simulation of a small silicon Cz furnace
Journal Volume Year Pages Concerned
Proc. of the 4rth Symp. on Atomic-scale Surface and Interface Dynamics, March, 1-2, Tsukuba.   2000 119-122

Author Title of Article
F. Watanabe, S. Hirayama, K. Nishihira, T. Motooka *Silicon surface diffusion studied by field emission current fluctuations method
Journal Volume Year Pages Concerned
Proc. of the 4rth Symp. on Atomic-scale Surface and Interface Dynamics, March, 1-2, Tsukuba.   2000 123-128

Author Title of Article
T. Taishi, X. Huang, T. Fukami K. Hoshikawa *Variations of growth interface resulting from occurrence of constitutional super-cooling in heavily boron-doped silicon single crystal growth
Journal Volume Year Pages Concerned
Proc. of the 4rth Symp. on Atomic-scale Surface and Interface Dynamics, March, 1-2, Tsukuba.   2000 129-134

Author Title of Article
CH. Jing, S. Yasuhiro, H. Suenaga, T. Sato N. Imaishi *Numerical simultion of oxide melt flow in a crucible with a constant temperature side wall
Journal Volume Year Pages Concerned
Thermal Sci. Eng. Vol.8,No.3 2000 1-8

Author Title of Article
CH. Jing, T. Sato N. Imaishi, Y. Miyazawa *Three dimensional numerical simulation of oxide melt flow in Czochralski configuration
Journal Volume Year Pages Concerned
J. Crystal Growth 216 2000 372-388

Author Title of Article
S. Yasuhiro, T. Sato, N. Imaishi, S. Yoda *Three dimensional Marangoni flow in liquid bridge of low Pr fluid
Journal Volume Year Pages Concerned
Space Forum 6 2000 39-48

Author Title of Article
N. Imaishi, *Simulation of single crystal growth furnace
Journal Volume Year Pages Concerned
J. Jpn. Soc. Simulation Technology 19 2000 91-99

Author Title of Article
N. Imaishi, M. W. Li, T. Tsukada *Marangoni effect and oxygen transport in a small silicon Cz furnace
Journal Volume Year Pages Concerned
J. Jpn. Assoc. Crystal Growth 27 2000 281-287

Author Title of Article
R. Oshima, H. Nishizawa, F. Hori *In-situ HRTEM study on atomic behavior of liquid-solid interface of silicon
Journal Volume Year Pages Concerned
Proc. 3rd Int. Symp. on Adv. Sci. and Tech. Si Materials   2000 549-554

Author Title of Article
Y. Mizukoshi, T. Fujimoto, Y. Nagata, R. Oshima Y. Maeda Characterization and Catalytic Activity of Core-shell Structured Gold/Palladium Bimetallic Nanoparticles Synthesized by the Sonochemical Method
Journal Volume Year Pages Concerned
J. Phys. Chem. B 104 2000 6028-6032

Author Title of Article
T. Tamano, F. Hori, R. Oshima T. Hisamatsu Study on Defects of Solar Cell Silicon Irradiated with 1 MeV Electrons by Positron Annihilation
Journal Volume Year Pages Concerned
Jpn. J. Appl. Phys. 39 2000 4693-4698

Author Title of Article
T. Ezawa, E. Wakai, R. Oshima Radiation-induced segregation in model alloys
Journal Volume Year Pages Concerned
J. Nuclear Materials 283-7 2000 244-248

Author Title of Article
K. Nishihira, S. Munetoh, T. Motooka *Uniaxial Strain Observed in Solid/Liquid Interface during Crystal Growth from Melted Si: A Molecular Dynamics Study
Journal Volume Year Pages Concerned
J. Crystal Growth 210 2000 60-64

Author Title of Article
T. Motooka, K. Nisihira, S. Munetoh, K. Moriguchi, A. Shintani *Molecular dynamics simulations of solid phase epitaxy of Si: Growth mechanisms
Journal Volume Year Pages Concerned
Phys. Rev. B 61 2000 8537-8540

Author Title of Article
T. Motooka, K. Nisihira, S. Munetoh, K. Moriguchi, A. Shintani *Molecular dynamics simulations of solid phase epitaxy of Si: Growth mechanisms
Journal Volume Year Pages Concerned
Mat. Res. Symp. Proc. 584 2000 263-268

Author Title of Article
T. Motooka *Molecular dynamics simulations of crystal growth of Si
Journal Volume Year Pages Concerned
J. Japan Soc. Simulation Technology 19 2000 100-107

Author Title of Article
T. Motooka, K. Nishihira *Molecular dynamics simulations of crystal growth from melted Si: Self-interstitial formation at the solid/liquid interface
Journal Volume Year Pages Concerned
Proc. of the 3rd Int. Symp. on Advanced Science and Technology of Silicon Materials   2000 565-570

Author Title of Article
T. Motooka *Solid-liquid interface structures and defect formation processes in crystal groeth from melted Si
Journal Volume Year Pages Concerned
J. Crystallographic Soc. Jpn. 42 2000 510-515

Author Title of Article
S. Harada, T. Motooka Recrystallization and electrical properties of MeV P implanted 6H-SiC
Journal Volume Year Pages Concerned
J. Appl. Phys. 87 2000 2655-2657

Author Title of Article
T. Motooka, Y. Kusano, K. Nishihira, N. Kato Ellipsometric analysis of ultrathin oxide layers on SIMOX wafers
Journal Volume Year Pages Concerned
Applied Surf. Sci. 159-160 2000 111-115

Author Title of Article
Y. Wang, K. Kakimoto *Dislocation effect on crystal-melt interface: an in situ observation of the melting of silicon
Journal Volume Year Pages Concerned
J. Crystal Growth 208 2000 303-312

Author Title of Article
K. Kakimoto, T. Umehara, H. Ozoe *Molecular dynamics analysis on diffusion of point defects
Journal Volume Year Pages Concerned
J. Crystal Growth 210 2000 54-59

Author Title of Article
N. Machida, Y. Shimizu K. Hoshikawa *The effects of argon gas flow rate and furnace pressure on oxygen concentration in Czochralski silicon single crystals grown in a transverse magnetic field
Journal Volume Year Pages Concerned
J. Crystal Growth 210 2000 532-540

Author Title of Article
K. Kakimoto, H. Ozoe *Oxygen distribution at a solid-liquid interface of silicon under transverse magnetic fields
Journal Volume Year Pages Concerned
J. Crystal Growth 212 2000 429-437

Author Title of Article
K. Kakimoto *Atomic and Macroscale simulation of transport phenomena during crystal growth
Journal Volume Year Pages Concerned
Second Inter. School on Crystal Growth Technology(ISCGT-2)   2000 130-137

Author Title of Article
K. Kakimoto, T. Umehara, H. Ozoe *Molecular dynamics analysis of point defects in silicon near solid-liquid interface
Journal Volume Year Pages Concerned
Applied Surface Science   2000 387-391

Author Title of Article
J. S. Szmyd, M. Jaszczur, H. Ozoe K. Kakimoto *Numerical analysis of buoyancy driven convection and radiation from the free surface of the fluid in a vertical cylinder
Journal Volume Year Pages Concerned
Japn. Soc. Mech. Eng. International J. B-FLUID 43 2000 679-685

Author Title of Article
S. Maeda, K. Abe, H. Nakanishi, K. Terashima *Uniformity of oxygen concentration in CZ-Si crystals depending on evaporation of SiO from free melt surface
Journal Volume Year Pages Concerned
J. Jpn. Assoc. Crystal Growth 27 2000 267-274

Author Title of Article
S. Maeda, K. Abe, H. Nakanishi, K. Terashima *Uniformity of oxygen concentration in CZ-Si crystals depending on evaporation of SiO from free melt surface
Journal Volume Year Pages Concerned
J. Jpn. Assoc. Crystal Growth 27 2000 267-274

Author Title of Article
H. Nakanishi, K. Nakazato K. Terashima *Surface Tension Variation of molten silicon measured by ring tensiometry technique and related temperature and impurity dependence
Journal Volume Year Pages Concerned
Jpn. J. Appl. Phys. 39 2000 6487-6492

Author Title of Article
K. Terashima, M. Kato, S. Nishimura *Variation of Silicon Melt Convections with Boron Addition
Journal Volume Year Pages Concerned
Proc. The 145th Commitee on Processing and Characterization of Crystals   2000 585-591

Author Title of Article
T. Taishi, X. Huang, M. Kubota, T. Kajigaya, T. Fukami, K. Hoshikawa *Heavily Boron-doped Silicon Single Crystal Growth: Constitutional Supercooling
Journal Volume Year Pages Concerned
Jpn. J. Appl. Phys 39 2000 L5-L8

Author Title of Article
T. T aishi, X. Huang, T. Fukami K. Hoshikawa *Dislocation-Free Czochralski Si Crystal Growth without the Dash-Necking Process: Growth from Undoped Si Melt
Journal Volume Year Pages Concerned
Jpn. J. Appl. Phys 39 2000 L191-L194

Author Title of Article
X. Huang, T. Taishi, I. Yonenaga K. Hoshikawa *Dislocation-Free Si crystal growth without Dash-necking using hevily B and Ge codoped Si seed
Journal Volume Year Pages Concerned
Jpn. J. Appl. Phys 39 2000 L1115-L1117

Author Title of Article
X. Huang, T. Taishi, I. Yonenaga K. Hoshikawa *Dislocation-Free B-Doped Si Crystal Growth without the Dash-Necking Process in Czochralski Method: Influence of B concentration
Journal Volume Year Pages Concerned
J. Crystal Growth 39 2000 L1115-L1117

Author Title of Article
T. Taishi, X. Huang, M. Kubota, T. Kajigaya T. Fukami K. Hoshikawa *Heavily boron-doped Czochralski (CZ) silicon crystal growth: segregation and constitutional supercooling
Journal Volume Year Pages Concerned
Materials Science and Engineering B72 2000 169-172

Author Title of Article
K. Hoshikawa X. Huang *Oxygen transportation during Czochralski silicon crystal growth
Journal Volume Year Pages Concerned
Materials Science and Engineering B72 2000 73-79

Author Title of Article
X. Huang, K. Yamahara, K. Hoshikawa *In situ observation of the Si melt-silica glass interface concerning CZ-Si crystal growth
Journal Volume Year Pages Concerned
Materials Science and Engineering B72 2000 164-168

Author Title of Article
X. Huang, T. Wang, K. Yamahara, T. Taishi, K. Hoshikawa *In situ Observation of the Interfacial Phase Formation at Si Melt/Silica Glass Interface
Journal Volume Year Pages Concerned
Jpn. J. Appl. Phys. 39 2000 3281-3285

Author Title of Article
N. Machida, K. Hoshikawa, Y. Shimizu *The relationship between argon gas flow on silicon melt surface and oxygen concentration in Czochralski silicon single crystals
Journal Volume Year Pages Concerned
J. Jpn. Assoc. Crystal Growth 27 2000 11-16

Author Title of Article
Y. Misukoshi, E. Takagi, H. Okuno, R. Oshima, Y. Maeda, Y. Nagata Preparation of platinum nanoparticles by sonochemical reduction of the Pt(IV)ions: Role of surfactants
Journal Volume Year Pages Concerned
Ultrasonics Sonochemistry 8 2000 1-6

Author Title of Article
T. Tamano, F. Hori, R. Oshima T. Hisamatsu *Study on Behavior of Electron-Irradiation Defects and Impurities of Czochralski Silicon with Annealing by Positron Annihilation
Journal Volume Year Pages Concerned
Jpn. J. Appl. Phys. 40 2001 452-456

Author Title of Article
T X. Huang, T. Taishi, I. Yonenaga K. Hoshikawa *Dislocation-Free Czochralski Si Crystal Growth without Dash Necking: Heavily B-Doping and Lightly Doping
Journal Volume Year Pages Concerned
Jpn. J. Appl. Phys. 40 2001 12-17

Author Title of Article
T. Motooka K. Nishihira *Molecular dynamics simulations of defect formation during Si melt growth: A microscopic picture of V/G
Journal Volume Year Pages Concerned
Proc. of the Fifth Symp. on Atomic-scale Surface and Interface Dynamics.   2001 117-120

Author Title of Article
T R. Oshima, H. Nishizawa, F. Hori, N. Fujita *Study on atom behaviors of liquid-solid interface of silicon by HRTEM
Journal Volume Year Pages Concerned
Proc. of the Fifth Symp. on Atomic-scale Surface and Interface Dynamics.   2001 121-126

Author Title of Article
X. Huang, T. Taishi, K. Hoshikawa *Effect of B and Ge codoping on dislocation behavior in Czochralski Si crystal growth
Journal Volume Year Pages Concerned
Proc. of the Fifth Symp. on Atomic-scale Surface and Interface Dynamics.   2001 127-132

Author Title of Article
Y. Wang, K. Kakimoto *Dislocations and crystal-melt interfaces in the melting process of silicon
Journal Volume Year Pages Concerned
Proc. of the Fifth Symp. on Atomic-scale Surface and Interface Dynamics.   2001 133-140

Author Title of Article
K. Terashima, H. Nakanishi, K. Abe, S. Maeda *Fundamental properties of Si melts and the uniformity of Si crystals
Journal Volume Year Pages Concerned
Proc. of the Fifth Symp. on Atomic-scale Surface and Interface Dynamics.   2001 141-144

Author Title of Article
K. Kakimoto *Oxygen distribution in silicon melt under inhomogeneous transverse magnetic fields
Journal Volume Year Pages Concerned
Proc. of the Fifth Symp. on Atomic-scale Surface and Interface Dynamics.   2001 145-150

Author Title of Article
S. Hirayama, F. Watanabe T. Takahashi *Surface Diffusivity Measurements on Boron Covered Silicon Surfaces by Field Emission
Journal Volume Year Pages Concerned
Proc. of the Fifth Symp. on Atomic-scale Surface and Interface Dynamics.   2001 151-158

Author Title of Article
H. Nakanishi, K. Abe, S. Maeda, K. Terashima *Si melt flow in a crucible during crystal pulling process depending on surface tension variation
Journal Volume Year Pages Concerned
Proc. of the Fifth Symp. on Atomic-scale Surface and Interface Dynamics.   2001 159-166

Author Title of Article
S. Maeda, K. Abe, H. Nakanishi, K. Terashima *Uniformity of Oxygen atom distribution related to evaporation of SiO from melt surface
Journal Volume Year Pages Concerned
Proc. of the Fifth Symp. on Atomic-scale Surface and Interface Dynamics.   2001 167-176

Author Title of Article
K. Hoshikawa, X. Huang, S. Sakaia, S. Oishi, T. Taishi, K. Yamahara *Dynamic behavior of oxygen, heavily doped other impurities and grown-in defect in the Czochralski Si crystal
Journal Volume Year Pages Concerned
Proc. of the Fifth Symp. on Atomic-scale Surface and Interface Dynamics.   2001 177-182

Author Title of Article
S. Yasuhiro, M. W. Li, N. Imaishi *Role of the Marangoni effect on silicon melt flow
Journal Volume Year Pages Concerned
Proc. of the Fifth Symp. on Atomic-scale Surface and Interface Dynamics.   2001 183-186

Author Title of Article
K. Abe, K. Terashima, T. Matsumoto, S. Maeda, H. nakanishi *Oxygen concentration control of CZ Si crystal
Journal Volume Year Pages Concerned
Memoirs of Shonan Institute of Technology 35 2001 37-46

Author Title of Article
S. Maeda, K. Abe, H. Nakanishi, M. Kato, K. Terashima *Uniformity of oxygen concentration in CZ-Si single crystals
Journal Volume Year Pages Concerned
Memoirs of Shonan Institute of Technology 35 2001 47-62

Author Title of Article
H. Nakanishi, K. Abe, S. Maeda, K. Terashima *Surface tension variation of molten silicon measured by ring tensiometry technique and computer simulation of the melt flow in a crucible with the consideration of the Marangoni effect
Journal Volume Year Pages Concerned
Memoirs of Shonan Institute of Technology 35 2001 62-74

Author Title of Article
N. Imaishi,, S. Yasuhiro Y. Akiyama, S. Yoda Oscillatory Marangoni flow in half-zone liquid bridge of low Pr fluid
Journal Volume Year Pages Concerned
J. Crystal Growth In press 2001  

Author Title of Article
M. W. Li, Y. R. Li, N. Imaishi, T. Tsukada *Global simulation of a silicon Czochralski furnace
Journal Volume Year Pages Concerned
Submitted to J. Crystal Growth   2001  

Author Title of Article
M. W. Li, Y. R. Li, N. Imaishi, Y. Akiyama, T. Tsukada *Global simulation of a small silicon Czochralski furnace
Journal Volume Year Pages Concerned
To be submitted to J. Crystal Growth      

Author Title of Article
M. W. Li, Y. R. Li, Y. Akiyama, N. Imaishi *Global simulation of a small silicon Czochralski furnace
Journal Volume Year Pages Concerned
To be submitted to J. Chem. Eng. Jpn      

Author Title of Article
T. Motooka,, K. Nishihira, S. Munetoh, K. Moriguchi, A. Shintani *Reply to "Comment on 'Molecular-dynamics simulations of solid-phase epitaxy of Si: Growth mechanisms'
Journal Volume Year Pages Concerned
to be published in Phys. Rev. B   2001  

Author Title of Article
S. Munetoh, K. Moriguchi, A. Shintani, K. Nisihira, T. Motooka *Molecular dynamics simulations of solid phase epitaxy of Si: Defect formation processes
Journal Volume Year Pages Concerned
to be published in Phys. Rev. B   2001  

Author Title of Article
S. Munetoh, K. Moriguchi, K. Kamei, A. Shintani, T. Motooka *Epitaxial growth of a low-density framework form of crystalline silicon
Journal Volume Year Pages Concerned
to be published in Phys. Rev. Left.   2001  

Author Title of Article
Y. R. Wang, K. Kakimoto *An in-situ observation of dislocations and crystal-melt interface during the melting of silicon
Journal Volume Year Pages Concerned
J. Crystal Growth. In press 2001  

Author Title of Article
Y. R. Wang, K. Kakimoto *An in-situ X-ray topography observation of dislocations, crystal-melt interface and melting of silicon
Journal Volume Year Pages Concerned
Microelectronic Engineering. In press 2001  

Author Title of Article
Y. R. Wang, K. Kakimoto *The dislocation dependence of the crystal-melt interface shape: An in-situ X-ray Topography Study
Journal Volume Year Pages Concerned
J. Crystal Growth accepted 2001  

Author Title of Article
K. Kakimoto *Oxygen distribution in silicon melt under inhomogeneous transverse-magnetic fields
Journal Volume Year Pages Concerned
J. Crystal Growth accepted 2001  

Author Title of Article
S. Maeda, M. Kato, K. Terashima *Uniformity of silicon Czochralski crystals grown under controlled conditions
Journal Volume Year Pages Concerned
Submitted to J. Crystal Growth      

Author Title of Article
S. Nishimura K. Terashima *Variation of silicon melt viscosity with boron addition
Journal Volume Year Pages Concerned
To be ubmitted to J. Crystal Growth      

Author Title of Article
T. Tsuchiya, K. Terashima *The silicon melt density variation measured by Archimedean Technique with observing infrared signal
Journal Volume Year Pages Concerned
To be ubmitted to J. Crystal Growth      

Author Title of Article
K.. Terashima, H. Noguchi *The effect of boron addition on the generation of extended defects
Journal Volume Year Pages Concerned
To be ubmitted to J. Crystal Growth      

Author Title of Article
K.. Terashima, H. Noguchi The effects of boron impurity to the extended defects in CZ silicon crystals grown under interstitial rich conditions
Journal Volume Year Pages Concerned
To be ubmitted to J. Crystal Growth      

Author Title of Article
T. Irisawa, M. Mikami, K. Kakimoto, Y. Saito Computer simulation of heat and mass transfer in crystal growth
Journal Volume Year Pages Concerned
In "Crystal Growth on Computer", Jpn. Assoc. Crystal Growth, 1996      

Author Title of Article
K. Kakimoto Use of an inhomogeneous magnetic fields for silicon crystal growth
Journal Volume Year Pages Concerned
HIGH MAGNETIC FIELDS:APPLICATIONS・GENERATION・MATERIALS, World Scientific Edited by Hans J. Schneider-Muntau, 1997      

Author Title of Article
K. Kakimoto Phase Diagram
Journal Volume Year Pages Concerned
In "Fundamentals of Crystal Growth", J. S. Appl. Phys., 1997      

Author Title of Article
T. Irisawa, M. Mikami, K. Kakimoto, Y. Saito Computer simulation of heat and mass transfer in crystal growth
Journal Volume Year Pages Concerned
In "Crystal Growth on Computer", Jpn. Assoc. Crystal Growth, 1997      

Author Title of Article
K. Hoshikawa Oxygen concentration control and magnetic field application technologies in Czochralski silicon crystal growth,
Journal Volume Year Pages Concerned
In "Trend in Material Science:Edited by S. Radhakrishna, Narosa Publishing House, 1997      

Author Title of Article
K. Kakimoto Crystal Growth and its Mechanism
Journal Volume Year Pages Concerned
In "Fundamentals of Crystal Growth", Jpn. Assoc. Crystal Growth, 1998      

Author Title of Article
K. Terashima Chapter 2:Essential interest in Si melt fundamentals pp. 15-46
Journal Volume Year Pages Concerned
In "Recent Development of Bulk Crystal Growth 1998", edited by M. Issiki, Research Signpost Publ., 1998      

Author Title of Article
K. Hoshikawa Crystal Growth Technology supporting present Electronics",
Journal Volume Year Pages Concerned
Co edited by T. Fukuda and K. Hosikawa: Baifu-kan, 1998      

Author Title of Article
K. Hoshikawa, X. Huang *Si melt growth:oxygen transportation during Czochralski growth, pp. 23-32
Journal Volume Year Pages Concerned
in "Crystalline Silicon", edited by R. Hull, Inspec publication System, 1999      

Author Title of Article
K. Kakimoto Numerical simulation of melt flow,
Journal Volume Year Pages Concerned
in "Computational Mechanics 6", Yokendo Publ., 1999      

Author Title of Article
K. Terashima 1.1 Si melt: density, surface tension and viscosity pp. 3-7
Journal Volume Year Pages Concerned
R. Hull ed. Properties of crystalline silicon Emis Datareviews Series No. 20, INSPEC publication      

Author Title of Article
K. Kakimoto Si melt convection in a crucible
Journal Volume Year Pages Concerned
R. Hull ed. Properties of crystalline silicon Emis Datareviews Series No. 20, INSPEC publication      

Author Title of Article
K. Kakimoto Preparation of Specimens 2
Journal Volume Year Pages Concerned
In "Fundamentals of Crystal Growth", Maruzen Experimental Physics No. 4, Maruzen, 2000      

Author Title of Article
K. Hoshikawa Bulk Crystal Growth Technique
Journal Volume Year Pages Concerned
In "Preparation of Specimens", Maruzen Experimental Physics No. 4, Maruzen, 2000      

Author Title of Article
N. Imaishi, K. Kakimoto Convective instability in crystal growth system
Journal Volume Year Pages Concerned
In "Annual Review of Heat Transfer, vol. 12", Begel House Inc. Publisher, 2001      


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