| 1.Research Institution | Kyushu University | |
| 2.Research Area | Physical and Engineering Science | |
| 3.Research Field | Atomic-scale Surface and Interface Dynamics | |
| 4.Term of Project | FY1996〜FY2000 | |
| 5.Project Number | 96P00202 | |
| 6.Title of Project | Dynamic behavior of silicon atoms, lattice defects and impurities near silicon melt-crystal interface |
| Name | Institution,Department | Title of Position |
| Nobuyuki Imaishi | Kyushu University, Institute of Advanced Material Study | Professor |
8.Core Members
| Names | Institution,Department | Title of Position |
| Koichi Kakimoto | Kyushu University, Institute of Advanced Material Study | Associate Professor |
| Teruaki Motooka | Kyushu University, Graduate School of Engineering | Professor |
| Keigo Hoshikawa | Shinsyu University, Faculty of Education | Professor |
9.Cooperating Researchers
| Names | Institution,Department | Title of Position |
| Ryuichiro Oshima | Osaka Prefectural University, Institute of Advanced Science | Professor |
| Huang, Xinming | JSPS Post Doctoral Researcher (Shinshu University) | |
| Wang, Yuren | JSPS Post Doctoral Researcher (Kyushu University) |
10.Summary of Research Results
|
1) Macro-scale simulation analyzed convective heat-mass transfer in a small Cz furnace and the effective usage of magnetic field for controlling melt convection and oxygen concentration. 2) Large scale Molecular Dynamics simulations with the Tersoff potential revealed (1) the solid/liquid Si interface is a rough surface composed of {111} facets in the [001] pulling, while it is essentially a flat (111) surface in the [111] pulling; (2) the melt growth in the [001] direction occurs by attaching Si atoms in the liquid at the kink sites associated with the {111} facets, while in the [111] direction double-layered two-dimensional nucleation is first created and followed by double-step layer-by-layer growth, (3) there is a transition layer at the s/l interface with a thickness of approximately 1 nm, (4) point defect formation can be initiated by 5-membered rings created at the interfaces. 3) Precise measurements of thermophysical properties of silicon melt revealed that there is no density anomaly near melting temperature. Segregation coefficient of oxygen was determined to be 0.8±0.1. MD simulations were effectively applied to determine diffusivity of oxygen in melt and those of point defects in crystal. 4) Mass transfer rate of oxygen impurity was analyzed experimentally and numerically. 5) An in-situ observation of the melting of silicon using X-ray diffraction topography revealed the dislocation effects on the shape of crystal-melt interface, i.e., in low dislocation density silicon crystal, uniform melting took place with a flat interface, however, in high dislocation density silicon, inhomogeneous melting caused by the melting temperature lowering around a dislocation took place and interface becomes rough. 6) In-situ observation of melt-crystal interface by a High Resolution Transmission Electron Microscope confirmed the atomic scale dynamics of the crystal growth predicted by the MD simulations. A time -resolved Field Emission Microscope was developed and measured surface diffusion coefficient of B atoms on Si surface. 7) Based on the studies of dislocation behavior, a new method was developed to grow large dislocation free silicon crystals without using the Dash-necking. |
11.Key Words
(1)silicon crystal growth、(2)melt-crystal interface、(3)in-situ observation techniques
(4)micro-scale simulations、(5)macro-scale simulations、(6)point defects
(7)interface shape、(8)behavior of oxygen impurity、(9)properties of silicon melt
12.References
| Author | Title of Article | |||
| Z. Niu, K. Mukai, Y. Shiraishi, T. Hibiya, K. Kakimoto, M. Koyama | Effect of oxygen partial pressure on the surface tension of molten silicon | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Jpn. Assoc. Crystal Growth | 23 | 1996 | 374-381 | |
| Author | Title of Article | |||
| K. Terashima, H. Nakanishi, S. Maeda, K. Abe, K. Hoshikawa and S. Kimura | New Approach to CZ Si Growth-Fundamental Properties of Si Melt Doped with Impurities- | |||
| Journal | Volume | Year | Pages Concerned | |
| Proc. the 145th Committee on Processing and Characterization of Crystals | 1996 | 64-71 | ||
| Author | Title of Article | |||
| K. Abe, T. Matsumoto, S. Maeda H. Nakanishi, K. Hoshikawa, K. Terashima | Oxygen Solubilities in Si Melts:influence of boron addition | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Crystal Growth | 181 | 1997 | 41-47 | |
| Author | Title of Article | |||
| K. Kakimoto H. Ozoe | *Micro segregation of oxygen at a solid-liquid interface in silicon | |||
| Journal | Volume | Year | Pages Concerned | |
| Proc. the 1st Symp. on Atomic-scale Surface and Interface Dynamics, March 13-14, Tokyo | 1997 | 19-24 | ||
| Author | Title of Article | |||
| K. Terashima, K. Abe, S. Maeda H. Nakanishi | *Influence of boron addition on silicon melt -Oxygen solubility and evaporation from silicon melt surface- | |||
| Journal | Volume | Year | Pages Concerned | |
| Proc. the 1st Symp. on Atomic-scale Surface and Interface Dynamics, March 13-14, Tokyo | 1997 | 31-34 | ||
| Author | Title of Article | |||
| T. Motooka | *Molecular dynamics simulations of crystal growth from melted silicon | |||
| Journal | Volume | Year | Pages Concerned | |
| Proc. the 1st Symp. on Atomic-scale Surface and Interface Dynamics, March 13-14, Tokyo | 1997 | 25-29 | ||
| Author | Title of Article | |||
| T. Motooka, S. Harada, M. Ishimaru | Homogeneous amorphization in high-energy ion implanted Si | |||
| Journal | Volume | Year | Pages Concerned | |
| Phys. Rev. Lett. | 78 | 1997 | 2980-2981 | |
| Author | Title of Article | |||
| M. Ishimaru, S. Munetoh T. Motooka | *Generation of amorphous silicon structures by rapid quenching: A molecular-dynamics study | |||
| Journal | Volume | Year | Pages Concerned | |
| Phys. Rev. | B56 | 1997 | 15 133-15 138 | |
| Author | Title of Article | |||
| K. Kakimoto | Convective instability in metalic molten silicon | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Phys. Soc. Jpn. | 52 | 1997 | 90-96 | |
| Author | Title of Article | |||
| K. Kakimoto, M. Eguchi, H. Ozoe | Bubble formation in silicon-quartz interface | |||
| Journal | Volume | Year | Pages Concerned | |
| The Science Reports of The Research Institutes Tohoku University, Series A | 43 | 1997 | 47-49 | |
| Author | Title of Article | |||
| Z. Niu, K. Mukai, Y. Shiraishi, T. Hibiya, K. Kakimoto, M. Koyama | Effect of oxygen and temperature on the surface tension of molten silicon | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Jpn. Assoc. Crystal Growth | 24 | 1997 | 369-378 | |
| Author | Title of Article | |||
| K. Kakimoto, M. Eguchi, H. Ozoe | *Use of an inhomogeneous magnetic field for silicon crystal growth | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Crystal Growth | 180 | 1997 | 442-449 | |
| Author | Title of Article | |||
| M. Watanabe, K. Kakimoto, M. Eguchi, T. Hibiya | Modification of heat and mass transfers and their effect on the crystal-melt interface shape of Si single crystal during Czochralski crystal growth | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 36 | 1997 | 6181-6186 | |
| Author | Title of Article | |||
| K. Kakimoto, H. Noguchi, M. Eguchi | Sensitivity of oxygen sensors in silicon melt to temperature fluctuation | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Electrochemical Society. | 144 | 1997 | 4045-4049 | |
| Author | Title of Article | |||
| M. Akamatsu, K. Kakimoto H. Ozoe | *Effect of crucible rotation on the melt convection and the structure in a Czochralski method | |||
| Journal | Volume | Year | Pages Concerned | |
| Transport Phenomena in Thermal Science and Process Engineering | 3 | 1997 | 637-642 | |
| Author | Title of Article | |||
| K. Kakimoto H. Ozoe | *Magnetic field effects on melt convection during crystal growth | |||
| Journal | Volume | Year | Pages Concerned | |
| Proc. the 12th KACG Technical Meeting and the 4th Korea-Japan Electronic Materials Growth Symp. | 1997 | 187-196 | ||
| Author | Title of Article | |||
| S. Maeda, M. Kato, K. Abe, H. Nakanishi, K. Hoshikawa K. Terashima | *Temperature Variation of the Surface of a Silicon Melt Due to Evaporation of Chemical Species I. Antimony Addition | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Electrochemical Society | 144 | 1997 | 3185-3188 | |
| Author | Title of Article | |||
| S. Maeda, M. Kato K. Abe, H. Nakanishi K. Hoshikawa K. Terashima | *Analysis of Deposits Evaporated from Boron Doped Silicon Melt | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 36 | 1997 | L971-L974 | |
| Author | Title of Article | |||
| W. C. Won, K. Kakimoto H. Ozoe | *Transient analysis of melt flow under inhomogeneous magnetic fields | |||
| Journal | Volume | Year | Pages Concerned | |
| Proc. The 2nd Symp. on Atomic-Scale Surface and Interface Dynamics, 26 February 1998 | 1997 | 57-62 | ||
| Author | Title of Article | |||
| N. Imaishi, S. Yasuhiro | *Three dimensional oscillatory flow in silicon melt half-zone | |||
| Journal | Volume | Year | Pages Concerned | |
| Proc. The 2nd Symp. on Atomic-Scale Surface and Interface Dynamics, 26 February 1998 | 1997 | 63-68 | ||
| Author | Title of Article | |||
| K. Hoshikawa, S. Sakai X. Huang | *Measurement of oxygen dissolution rate from silica glass to silicon melt with sessile drop method | |||
| Journal | Volume | Year | Pages Concerned | |
| Proc. The 2nd Symp. on Atomic-Scale Surface and Interface Dynamics, 26 February 1998 | 1997 | 69-74 | ||
| Author | Title of Article | |||
| K. Hoshikawa, S. Sakai X. Huang | *Analysis on oxygen evaporation and dissolution rate concerning with CZ Si crystal growth | |||
| Journal | Volume | Year | Pages Concerned | |
| Proc. The 2nd Symp. on Atomic-Scale Surface and Interface Dynamics, 26 February 1998 | 1997 | 75-80 | ||
| Author | Title of Article | |||
| K. Terashima, H. Nakanishi, K. Abe S. Maeda | *Variation of silicon melt properties -influence of boron addition- | |||
| Journal | Volume | Year | Pages Concerned | |
| Proc. The 2nd Symp. on Atomic-Scale Surface and Interface Dynamics, 26 February 1998 | 1997 | 81-84 | ||
| Author | Title of Article | |||
| K. Kakimoto, S. Kikuchi, H. Ozoe | *Molecular dynamics simulation of oxygen in silicon melt | |||
| Journal | Volume | Year | Pages Concerned | |
| Proc. The 2nd Symp. on Atomic-Scale Surface and Interface Dynamics, 26 February 1998 | 1997 | 85-90 | ||
| Author | Title of Article | |||
| T. Motooka, M. Ishimaru, S. Munetoh | *Defect formation during crystal growth from melted silicon | |||
| Journal | Volume | Year | Pages Concerned | |
| Proc. The 2nd Symp. on Atomic-Scale Surface and Interface Dynamics, 26 February 1998 | 1997 | 91-96 | ||
| Author | Title of Article | |||
| F. Watanabe, T. Motooka | *Atomic scale dynamics of silicon at high temperatures | |||
| Journal | Volume | Year | Pages Concerned | |
| Proc. The 2nd Symp. on Atomic-Scale Surface and Interface Dynamics, 26 February 1998 | 1997 | 97-102 | ||
| Author | Title of Article | |||
| S. H. Hahn, T. Tsukada, M. Hozawa, S. Maruyama, N. Imaishi, S. Kitagawa | Global analysis of heat transfer in Si CZ furnace with specular and diffuse surfaces | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Crystal Growth | 191 | 1998 | 413-420 | |
| Author | Title of Article | |||
| R. Ohshima, F. Hori, T. Kamino T. Yaguchi | *In-situ High-Resolution Electron Microscopy of melting-freezing process of silicon | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Jpn. Assoc. Crystal Growth | 25 | 1998 | 201-206 | |
| Author | Title of Article | |||
| R. Ohshima, F. Hori, M. Komatsu, H. Mori | *Formation of stacking fault tetrahedra in silicon rapidly solidified from melt | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 37 | 1998 | L1430-L1432 | |
| Author | Title of Article | |||
| T, Motooka | *The role of defects during amorphization and crystallization processes in ion implanted Si | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Mater. Sci. & Eng. | A253/1-2 | 1998 | 42-49 | |
| Author | Title of Article | |||
| M. Ishimaru, S. Munetoh, T. Motooka, K. Moriguchi, A. Shintani | *Behavior of impurity atoms during crystal growth from melted silicon:carbon atoms | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Crystal Growth | 194 | 1998 | 178-188 | |
| Author | Title of Article | |||
| F. Watanabe, M. Arita, T. Motooka, K. Okano, T. Yamada | *Diamond tip arrays for parallel lithography and data storage | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys | 194 | 1998 | L562-L564 | |
| Author | Title of Article | |||
| M. Ishimaru, S. Munetoh, T. Motooka, K. Moriguchi, A. Shintani | *Molecular-dynamics studies on defect formation processes during crystal growth of silicon from melt | |||
| Journal | Volume | Year | Pages Concerned | |
| Phys. Rev | B58 | 1998 | 12583-12585 | |
| Author | Title of Article | |||
| K. Kakimoto, H. Ozoe | *Heat and mass transfer during crystal growth | |||
| Journal | Volume | Year | Pages Concerned | |
| Computational Materials Science | 10 | 1998 | 127-133 | |
| Author | Title of Article | |||
| M. Akamatsu, K. Kakimoto H. Ozoe | * Numerical computation for the secondary convection in a Czochralski crystal growing system with a rotating crucible and a static crystal rod | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Materials Processing & Manufacturing Science | 15 | 1998 | 329-348 | |
| Author | Title of Article | |||
| K. Kakimoto, H. Ozoe | *Segregation of Oxygen at a solid/liquid interface in silicon | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Electrochem. Soc. | 145 | 1998 | 1692-1695 | |
| Author | Title of Article | |||
| K. Kakimoto, H. Suenaga, H. Ozoe | *Physical Properties of silicon estimated by molecular dynamics under a condition of constant temperature and pressure | |||
| Journal | Volume | Year | Pages Concerned | |
| Rep. Advanced Material Study, Kyushu Univ. | 12 | 1998 | 7-10 | |
| Author | Title of Article | |||
| H. Fukui, K. Kakimoto, H. Ozoe | *The convection under an axial magnetic field in a Czochralski configuration, Advanced Computational Methods in Heat Transfer | |||
| Journal | Volume | Year | Pages Concerned | |
| Heat Transfer V. | 27 | 1998 | 135-144 | |
| Author | Title of Article | |||
| K. Kakimoto | Heat and mass transfer in silicon melt under magnetic fields | |||
| Journal | Volume | Year | Pages Concerned | |
| Book of the First International School on Crystal Growth Technology | 1998 | 172-186 | ||
| Author | Title of Article | |||
| X. Wu, K. Kakimoto, H. Ozoe, Z. Guo | *Numerical study of natural convection in Czochralski crystallization | |||
| Journal | Volume | Year | Pages Concerned | |
| The Chemical Engineering Journal | 71 | 1998 | 183-189 | |
| Author | Title of Article | |||
| H. Tomonari, M. Iwamoto, K. Kakimoto, H. Ozoe, K. Suzuki, T. Fukuda | *Standing-oscillatory natural convection computed for molten silicon in a zochralski configuration | |||
| Journal | Volume | Year | Pages Concerned | |
| The Chemical Engineering Journal | 71 | 1998 | 191-200 | |
| Author | Title of Article | |||
| Y. Yamanaka, K. Kakimoto, H. Ozoe, S. W. Churchill | Rayleigh-Benard oscillatory natural convection of liquid gallium heated from below | |||
| Journal | Volume | Year | Pages Concerned | |
| The Chemical Engineering Journal | 71 | 1998 | 201-205 | |
| Author | Title of Article | |||
| S. Nakamura, T. Hibiya, K. Kakimoto, N. Imaishi, S. Nishizawa, A. Hirata, K. Mukai, S. Yoda, T. Morita | Temperature fluctuations of the Marangoni flow in a liquid bridge of molten silicon under microgravity on board the TR1-A-4 rocket | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Crystal Growth | 186 | 1998 | 85-94 | |
| Author | Title of Article | |||
| M. Akamatsu, K. Kakimoto. H. Ozoe | Temperature fluctuations of the Marangoni flow in a liquid bridge of molten silicon under microgravity on board the TR1-A-4 rocket | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Crystal Growth | 186 | 1998 | 85-94 | |
| Author | Title of Article | |||
| S. Maeda, M. Kato, K. Abe, H. Nakanishi, K. Hoshikawa K. Terashima | *Evaporation of Oxygen Bearing Species from Boron Doped Silicon Melt | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Electrochemical Society | 145 | 1998 | 2548-2552 | |
| Author | Title of Article | |||
| S. Maeda, M. Kato, K. Abe, H. Nakanishi, K. Hoshikawa K. Terashima | *Oxygen Concentration in Czochralski Silicon Crystals depending on Silicon Monoxide Evaporation from Boron Doped Silicon Melt | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Crystal Growth | 192 | 1998 | 117-124 | |
| Author | Title of Article | |||
| S. Maeda, K. Takeuchi, M. Kato, K. Abe, H. Nakanishi, K. Hoshikawa K. Terashima | *Morphology variations on inner surface of silica crucibles depending on oxygen concentration in silicon melts | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Crystal Growth | 194 | 1998 | 70-75 | |
| Author | Title of Article | |||
| K. Abe, T. Matsumoto, K. Terashima, S. Maeda, H. Nakanishi, K. Hoshikawa | *Oxygen Solubilities in Si Melts:influence of carbon addition | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Electrochemical Society | 145 | 1998 | 319-322 | |
| Author | Title of Article | |||
| K. Abe, T. Matsumoto, S. Maeda, H. Nakanishi, K. Terashima | *Fused quartz dissolution rate in silicon melts: influence of boron addition | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Crystal Growth | 186 | 1998 | 557-564 | |
| Author | Title of Article | |||
| H. Nakanishi, K. Nakazato, S. Asaba, K. Abe, S. Maeda, K. Terashima | *Ring Depression technique for measuring surface tension of molten germanium | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Crystal Growth | 187 | 1998 | 391-396 | |
| Author | Title of Article | |||
| H. Nakanishi, K. Nakazato S. Asaba K. Abe, S. Maeda, K. Terashima | *Temperature dependence of density of molten germanium measured by a newly developed Archimedian technique | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Crystal Growth | 191 | 1998 | 711-717 | |
| Author | Title of Article | |||
| K. Terashima, K. Abe, S. Maeda H. Nakanishi | *Influence of boron addition into silicon melt on oxygen atom behavior in Cz pulling system: | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Crystal Growth | 191 | 1998 | 711-717 | |
| Author | Title of Article | |||
| X. Huang, K. Saitou, S. Sakai, K Terashima K. Hoshikawa | *Analysis on oxygen transportation process concerning with CZ Si crystal growth by sessile drop method | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 37 | 1998 | L193-L195 | |
| Author | Title of Article | |||
| X. Huang, K. Saitou, S. Sakai, K. Terashima, K. Hoshikawa | *Analysis of oxygen evaporation rate and dissolution rate concerning with CZ Si crystal growth: Effect of Ar pressure | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 37 | 1998 | 3188-3193 | |
| Author | Title of Article | |||
| X. Huang, T. Nakazawa, K. Terashima, K. Hoshikawa | *Silicon crystal growth under equilibrium condition of SiO2-Si-SiO system: Equilibrium oxygen segregation coefficient | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 37 | 1998 | L1504-L1507 | |
| Author | Title of Article | |||
| N. Imaishi, C. J. Jing, S. Yasuhiro, Y. Akiyama, M. Li | *Transport phenomena in Cz furnace | |||
| Journal | Volume | Year | Pages Concerned | |
| Proc. 3rd Symp. on Atomic-Scale Surface and Interface Dynamics, March 4-5 1999, Fukuoka. | 1999 | 221-224 | ||
| Author | Title of Article | |||
| T. Motooka, S. Munetoh, K. Nishihira | *Molecular dynamics simulations of solid phase epitaxy of Si | |||
| Journal | Volume | Year | Pages Concerned | |
| Proc. 3rd Symp. on Atomic-Scale Surface and Interface Dynamics, March 4-5 1999, Fukuoka. | 1999 | 225-228 | ||
| Author | Title of Article | |||
| R. Oshima, F. Hori, M. Komatsu H. Mori, T. Kamino Y. Yaguchi | *In situ TEM observation of melting of silicon | |||
| Journal | Volume | Year | Pages Concerned | |
| Proc. 3rd Symp. on Atomic-Scale Surface and Interface Dynamics, March 4-5 1999, Fukuoka. | 1999 | 229-234 | ||
| Author | Title of Article | |||
| F. Watanabe, S. Hirayama, K. Nishihira, T. Motooka | *Silicon surface diffusion studied by field emission current fluctuations method | |||
| Journal | Volume | Year | Pages Concerned | |
| Proc. 3rd Symp. on Atomic-Scale Surface and Interface Dynamics, March 4-5 1999, Fukuoka. | 1999 | 235-239 | ||
| Author | Title of Article | |||
| Y. Wang K. Kakimoto | *The dislocation behaviour in the vicinity of molten zone: an X-ray topography study on the melting of silicon | |||
| Journal | Volume | Year | Pages Concerned | |
| Proc. 3rd Symp. on Atomic-Scale Surface and Interface Dynamics, March 4-5 1999, Fukuoka. | 1999 | 241-246 | ||
| Author | Title of Article | |||
| K. Kakimoto H. Ozoe | *Oxygen distribution at a solid-liquid interface of silicon under transverse magnetic fields | |||
| Journal | Volume | Year | Pages Concerned | |
| Proc. 3rd Symp. on Atomic-Scale Surface and Interface Dynamics, March 4-5 1999, Fukuoka. | 1999 | 247-252 | ||
| Author | Title of Article | |||
| X. Huang, K. Hoshikawa | *In-situ observation of the interface at the Si melt/silica glass interface | |||
| Journal | Volume | Year | Pages Concerned | |
| Proc. 3rd Symp. on Atomic-Scale Surface and Interface Dynamics, March 4-5 1999, Fukuoka. | 1999 | 253-257 | ||
| Author | Title of Article | |||
| K. Terashima, H. Nakazato H. Nakanishi | *Problems of Archimedean technique for measuring silicon melt density | |||
| Journal | Volume | Year | Pages Concerned | |
| Proc. 3rd Symp. on Atomic-Scale Surface and Interface Dynamics, March 4-5 1999, Fukuoka. | 1999 | 259-262 | ||
| Author | Title of Article | |||
| T. Taishi, X. Huang, K. Tearashima K. Hoshikawa | *Segregation phenomena at solid-liquid interface of silicon crystal growth with heavy boron doping | |||
| Journal | Volume | Year | Pages Concerned | |
| Proc. 3rd Symp. on Atomic-Scale Surface and Interface Dynamics, March 4-5 1999, Fukuoka. | 1999 | 263-267 | ||
| Author | Title of Article | |||
| K. Terashima, M. Kato | *Silicon melt convection in crucible with boron addition | |||
| Journal | Volume | Year | Pages Concerned | |
| Proc. 3rd Symp. on Atomic-Scale Surface and Interface Dynamics, March 4-5 1999, Fukuoka. | 1999 | 269-272 | ||
| Author | Title of Article | |||
| C. J. Jing, N. Imaishi, S. Yasuhiro, Y. Miyazawa | *Three dimensional numerical simulation of spoke pattern in oxide melt | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Crystal Growth | 200 | 1999 | 204-212 | |
| Author | Title of Article | |||
| H. Nishizawa, F. Hori R. Oshima | *Lattice defects in silicon rapidly solidified from the melt | |||
| Journal | Volume | Year | Pages Concerned | |
| Physica B | 273-4 | 1999 | 383-386 | |
| Author | Title of Article | |||
| Y. Mizukoshi, R. Oshima, Y. Maeda, Y. Nagata | Preparation of Platinum Nanoparticles by Sonochemical Reduction of the Pt(II)Ion | |||
| Journal | Volume | Year | Pages Concerned | |
| Langmuir | 15 | 1999 | 2733-2737 | |
| Author | Title of Article | |||
| R. Oshima, T. A. Yamamoto, Y. Mizukoshi, Y. Nagata, Y. Maeda | Electron Microscopy of Noble Metal Alloy Nanoparticles Prepared by Sonochemical Methods | |||
| Journal | Volume | Year | Pages Concerned | |
| Nanostructured Materials | 12 | 1999 | 111-114 | |
| Author | Title of Article | |||
| F. Hori, A. Morita and R. Oshima | Radiation-enhanced precipitation in FeCu(C) alloys studied by electron microscopy | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. Soc. Electron Microscopy | 48 | 1999 | 585-589 | |
| Author | Title of Article | |||
| T. Fujimoto, Y. Mizukoshi, Y. Maeda, Y. Nagata, R. Oshima | Study on Sonochemical Preparation and Phase Stability of Binary Alloy Nanoparticles from Aqueous Solution | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. Soc. Electron Microscopy | 48 | 1999 | 585-589 | |
| Author | Title of Article | |||
| F. Hori, A. Morita, H. Nishizawa R. Oshima | Formation of copper precipitate in FeCu and FeCuC alloys with irradiation | |||
| Journal | Volume | Year | Pages Concerned | |
| Proc. Int. Conf. on Solid-Solid Phase Transformations '99 | 1999 | 429-432 | ||
| Author | Title of Article | |||
| F. Hori, T. Chijiiwa, R. Oshima, T. Hisamatsu | Positron annihilation study of dopant effects on proton-irradiation defect in silicon | |||
| Journal | Volume | Year | Pages Concerned | |
| Physica B | 273-4 | 1999 | 480-484 | |
| Author | Title of Article | |||
| F. Watanabe, M. Arita, T. Motooka, K. Okano, T. Yamada | *Diamond Tip Arrays for Parallel Processing of Microelectromechanical Systems | |||
| Journal | Volume | Year | Pages Concerned | |
| Proc. of Foresight Institute Meeting | 1999 | |||
| Author | Title of Article | |||
| R. Durikovic, T. Motooka | *Modeling Material Behavior: Molecular Dynamics Simulation and Visualization | |||
| Journal | Volume | Year | Pages Concerned | |
| Proc. of Int. Conf. on Shape Modeling and Applications, IEEE Computer Society Press | 1999 | 186-191 | ||
| Author | Title of Article | |||
| M. Ishimaru T. Motooka | *Molecular dynamics simulations of crystal growth from melted silicon: defect formation processes | |||
| Journal | Volume | Year | Pages Concerned | |
| Mat. Res. Symp. Proc | 538 | 1999 | 247-250 | |
| Author | Title of Article | |||
| K. Kakimoto, S. Kikuchi H. Ozoe | *Molecular dynamics simulation of oxygen in silicon melt | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Crystal Growth | 198 | 1999 | 114-119 | |
| Author | Title of Article | |||
| K. Kakimoto, H. Fukui H. Ozoe | *Effect of the z-axis magnetic field on the Cz crystal growth melt New apprecations of magnetic fields for material processing | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Iron Steel Inst. Jpn. | 1999 | 221-226 | ||
| Author | Title of Article | |||
| K. Kakimoto, T. Umehara, H. Ozoe | *Transport mechanism of point deffects in silicon crystals estimeted by Molecular Dynamics | |||
| Journal | Volume | Year | Pages Concerned | |
| Rep. Advanced Material Study, Kyushu Univ. | 13 | 1999 | 87-91 | |
| Author | Title of Article | |||
| K. Kakimoto | *Macroscopic and microscopic mass transfer in silicon Czochralski method | |||
| Journal | Volume | Year | Pages Concerned | |
| Korean Association of Crystal Growth | 9 | 1999 | 381-383 | |
| Author | Title of Article | |||
| M. Watanabe, K. W. Yi, T. Hibiya K. Kakimoto | Direct observation and numerical simulation of molten silicon flow during crystal growth under magnetic fields by X-ray radiography and large-scale computation | |||
| Journal | Volume | Year | Pages Concerned | |
| Progress in Crystal Growth and Characterization of Materials | 38 | 1999 | 215-238 | |
| Author | Title of Article | |||
| Y. Wang, K. Kakimoto | *Dislocation effect on crystal-melt interface: an in situ observation of the melting of silicon | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Crystal Growth | 208 | 1999 | 303-312 | |
| Author | Title of Article | |||
| Y. C. Won, K. Kakimoto, H. Ozoe | *Transient three-dimensional flow characteristics of Si melt in a cusp-shaped magnetic field | |||
| Journal | Volume | Year | Pages Concerned | |
| Numerical Heat Transfer, Part A | 36 | 1999 | 551-561 | |
| Author | Title of Article | |||
| H. Nakanishi, K. Nakazato, S. Asaba, K. Abe, S. Maeda, K. Terashima | *Temperature dependence of density of molten germanium and silicon measured by a newly developed Archimedian technique | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Crystal Growth | 203 | 1999 | 75-79 | |
| Author | Title of Article | |||
| K. Terashima S. Nishimura | *Variation of silicon melt convection in a crucible with boron addition | |||
| Journal | Volume | Year | Pages Concerned | |
| Solid State Phenomena | 69-70 | 1999 | 473-478 | |
| Author | Title of Article | |||
| T. Taishi, X. Huang, M. Kubota, T. Kajigaya, T. Fukami, K. Hoshikawa | *Heavily Boron-doped Silicon Single Crystal Growth: Boron Segregation | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 38 | 1999 | L223-L225 | |
| Author | Title of Article | |||
| X. Huang, H. Kishi, S. Oishi, S. Sakai, H. Watanabe, K. Sanpei K. Hoshikawa | *Expansion behavior of bubbles in silica glass concerning Czochralski Si growth | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 38 | 1999 | L353-L355 | |
| Author | Title of Article | |||
| S. Sakai, X. Huang, Y. Okano K. Hoshikawa | *Development of Sessile drop method concerning Czochralski Si growth | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 38 | 1999 | 1847-1851 | |
| Author | Title of Article | |||
| S. Ooishi, H. Kishi, X. Huang, K. Hoshikawa, K. Sanpei, H. Watanabe | *Behavior of bubbles in silica glass for use in silicon crystal growth as crucible | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Jpn. Assoc. Crystal Growth. | 26 | 1999 | 147-152 | |
| Author | Title of Article | |||
| X. Huang, K. Terashima, K. Hoshikawa | *SiO Vapor Pressure in an SiO2 Glass/Si Melt/SiO Gas Equilibrium System | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 38 | 1999 | L1153-L1155 | |
| Author | Title of Article | |||
| X. Huang, K. Hoshikawa | *Silica dissolution and oxygen segregation concerning CZ-Si crystal growth | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Jpn. Assoc. Crystal Growth. | 26 | 1999 | 225-234 | |
| Author | Title of Article | |||
| K. Hoshikawa, X. Huang, T. Taishi, T. Kajigaya, T. Iino | *Dislocation-Free Czochralski Silicon Crystal Growth without the Dislocation-Elimination-Necking Process | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 38 | 1999 | L1369-L1371 | |
| Author | Title of Article | |||
| K. Nishihira T. Motooka | *Molecular dynamics simulations of self-interstitial formation processes during crystal growth from melted Si | |||
| Journal | Volume | Year | Pages Concerned | |
| Proc. of the 4rth Symp. on Atomic-scale Surface and Interface Dynamics, March, 1-2, Tsukuba. | 2000 | 81-84 | ||
| Author | Title of Article | |||
| R. Oshima, H. Nishizawa, F. Hori | *Study on melting and rapidly solidified substructures of silicon by TEM | |||
| Journal | Volume | Year | Pages Concerned | |
| Proc. of the 4rth Symp. on Atomic-scale Surface and Interface Dynamics, March, 1-2, Tsukuba. | 2000 | 85-88 | ||
| Author | Title of Article | |||
| K. Kakimoto | *Crucible and crystal rotation effects on oxygen distribution at an interface between solid and liquid of silicon under transverse magnetic fields | |||
| Journal | Volume | Year | Pages Concerned | |
| Proc. of the 4rth Symp. on Atomic-scale Surface and Interface Dynamics, March, 1-2, Tsukuba. | 2000 | 89-94 | ||
| Author | Title of Article | |||
| Y. Wang, K. Kakimoto | *The shape of solid-melt interface estimeted from in-situ observation | |||
| Journal | Volume | Year | Pages Concerned | |
| Proc. of the 4rth Symp. on Atomic-scale Surface and Interface Dynamics, March, 1-2, Tsukuba. | 2000 | 95-100 | ||
| Author | Title of Article | |||
| X. Huang, T. Taishi, I. Yonenaga K. Hoshikawa | *Dislocation-free B-doped Si crystal growth without the Dash-necking process in the Czochralski method: Dislocation behavior in the growth interface | |||
| Journal | Volume | Year | Pages Concerned | |
| Proc. of the 4rth Symp. on Atomic-scale Surface and Interface Dynamics, March, 1-2, Tsukuba. | 2000 | 101-106 | ||
| Author | Title of Article | |||
| K. Terashima, K. Kanno | *Silicon melt density-Problems of Archimedean Technique- | |||
| Journal | Volume | Year | Pages Concerned | |
| Proc. of the 4rth Symp. on Atomic-scale Surface and Interface Dynamics, March, 1-2, Tsukuba. | 2000 | 107-112 | ||
| Author | Title of Article | |||
| H. Nakanishi, K. Terashima | *Surface tension variation of silicon melts by adding boron | |||
| Journal | Volume | Year | Pages Concerned | |
| Proc. of the 4rth Symp. on Atomic-scale Surface and Interface Dynamics, March, 1-2, Tsukuba. | 2000 | 113-117 | ||
| Author | Title of Article | |||
| M. W. Li, N. Imaishi | *Global simulation of a small silicon Cz furnace | |||
| Journal | Volume | Year | Pages Concerned | |
| Proc. of the 4rth Symp. on Atomic-scale Surface and Interface Dynamics, March, 1-2, Tsukuba. | 2000 | 119-122 | ||
| Author | Title of Article | |||
| F. Watanabe, S. Hirayama, K. Nishihira, T. Motooka | *Silicon surface diffusion studied by field emission current fluctuations method | |||
| Journal | Volume | Year | Pages Concerned | |
| Proc. of the 4rth Symp. on Atomic-scale Surface and Interface Dynamics, March, 1-2, Tsukuba. | 2000 | 123-128 | ||
| Author | Title of Article | |||
| T. Taishi, X. Huang, T. Fukami K. Hoshikawa | *Variations of growth interface resulting from occurrence of constitutional super-cooling in heavily boron-doped silicon single crystal growth | |||
| Journal | Volume | Year | Pages Concerned | |
| Proc. of the 4rth Symp. on Atomic-scale Surface and Interface Dynamics, March, 1-2, Tsukuba. | 2000 | 129-134 | ||
| Author | Title of Article | |||
| CH. Jing, S. Yasuhiro, H. Suenaga, T. Sato N. Imaishi | *Numerical simultion of oxide melt flow in a crucible with a constant temperature side wall | |||
| Journal | Volume | Year | Pages Concerned | |
| Thermal Sci. Eng. | Vol.8,No.3 | 2000 | 1-8 | |
| Author | Title of Article | |||
| CH. Jing, T. Sato N. Imaishi, Y. Miyazawa | *Three dimensional numerical simulation of oxide melt flow in Czochralski configuration | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Crystal Growth | 216 | 2000 | 372-388 | |
| Author | Title of Article | |||
| S. Yasuhiro, T. Sato, N. Imaishi, S. Yoda | *Three dimensional Marangoni flow in liquid bridge of low Pr fluid | |||
| Journal | Volume | Year | Pages Concerned | |
| Space Forum | 6 | 2000 | 39-48 | |
| Author | Title of Article | |||
| N. Imaishi, | *Simulation of single crystal growth furnace | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Jpn. Soc. Simulation Technology | 19 | 2000 | 91-99 | |
| Author | Title of Article | |||
| N. Imaishi, M. W. Li, T. Tsukada | *Marangoni effect and oxygen transport in a small silicon Cz furnace | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Jpn. Assoc. Crystal Growth | 27 | 2000 | 281-287 | |
| Author | Title of Article | |||
| R. Oshima, H. Nishizawa, F. Hori | *In-situ HRTEM study on atomic behavior of liquid-solid interface of silicon | |||
| Journal | Volume | Year | Pages Concerned | |
| Proc. 3rd Int. Symp. on Adv. Sci. and Tech. Si Materials | 2000 | 549-554 | ||
| Author | Title of Article | |||
| Y. Mizukoshi, T. Fujimoto, Y. Nagata, R. Oshima Y. Maeda | Characterization and Catalytic Activity of Core-shell Structured Gold/Palladium Bimetallic Nanoparticles Synthesized by the Sonochemical Method | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Phys. Chem. B | 104 | 2000 | 6028-6032 | |
| Author | Title of Article | |||
| T. Tamano, F. Hori, R. Oshima T. Hisamatsu | Study on Defects of Solar Cell Silicon Irradiated with 1 MeV Electrons by Positron Annihilation | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 39 | 2000 | 4693-4698 | |
| Author | Title of Article | |||
| T. Ezawa, E. Wakai, R. Oshima | Radiation-induced segregation in model alloys | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Nuclear Materials | 283-7 | 2000 | 244-248 | |
| Author | Title of Article | |||
| K. Nishihira, S. Munetoh, T. Motooka | *Uniaxial Strain Observed in Solid/Liquid Interface during Crystal Growth from Melted Si: A Molecular Dynamics Study | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Crystal Growth | 210 | 2000 | 60-64 | |
| Author | Title of Article | |||
| T. Motooka, K. Nisihira, S. Munetoh, K. Moriguchi, A. Shintani | *Molecular dynamics simulations of solid phase epitaxy of Si: Growth mechanisms | |||
| Journal | Volume | Year | Pages Concerned | |
| Phys. Rev. B | 61 | 2000 | 8537-8540 | |
| Author | Title of Article | |||
| T. Motooka, K. Nisihira, S. Munetoh, K. Moriguchi, A. Shintani | *Molecular dynamics simulations of solid phase epitaxy of Si: Growth mechanisms | |||
| Journal | Volume | Year | Pages Concerned | |
| Mat. Res. Symp. Proc. | 584 | 2000 | 263-268 | |
| Author | Title of Article | |||
| T. Motooka | *Molecular dynamics simulations of crystal growth of Si | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Japan Soc. Simulation Technology | 19 | 2000 | 100-107 | |
| Author | Title of Article | |||
| T. Motooka, K. Nishihira | *Molecular dynamics simulations of crystal growth from melted Si: Self-interstitial formation at the solid/liquid interface | |||
| Journal | Volume | Year | Pages Concerned | |
| Proc. of the 3rd Int. Symp. on Advanced Science and Technology of Silicon Materials | 2000 | 565-570 | ||
| Author | Title of Article | |||
| T. Motooka | *Solid-liquid interface structures and defect formation processes in crystal groeth from melted Si | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Crystallographic Soc. Jpn. | 42 | 2000 | 510-515 | |
| Author | Title of Article | |||
| S. Harada, T. Motooka | Recrystallization and electrical properties of MeV P implanted 6H-SiC | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Appl. Phys. | 87 | 2000 | 2655-2657 | |
| Author | Title of Article | |||
| T. Motooka, Y. Kusano, K. Nishihira, N. Kato | Ellipsometric analysis of ultrathin oxide layers on SIMOX wafers | |||
| Journal | Volume | Year | Pages Concerned | |
| Applied Surf. Sci. | 159-160 | 2000 | 111-115 | |
| Author | Title of Article | |||
| Y. Wang, K. Kakimoto | *Dislocation effect on crystal-melt interface: an in situ observation of the melting of silicon | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Crystal Growth | 208 | 2000 | 303-312 | |
| Author | Title of Article | |||
| K. Kakimoto, T. Umehara, H. Ozoe | *Molecular dynamics analysis on diffusion of point defects | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Crystal Growth | 210 | 2000 | 54-59 | |
| Author | Title of Article | |||
| N. Machida, Y. Shimizu K. Hoshikawa | *The effects of argon gas flow rate and furnace pressure on oxygen concentration in Czochralski silicon single crystals grown in a transverse magnetic field | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Crystal Growth | 210 | 2000 | 532-540 | |
| Author | Title of Article | |||
| K. Kakimoto, H. Ozoe | *Oxygen distribution at a solid-liquid interface of silicon under transverse magnetic fields | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Crystal Growth | 212 | 2000 | 429-437 | |
| Author | Title of Article | |||
| K. Kakimoto | *Atomic and Macroscale simulation of transport phenomena during crystal growth | |||
| Journal | Volume | Year | Pages Concerned | |
| Second Inter. School on Crystal Growth Technology(ISCGT-2) | 2000 | 130-137 | ||
| Author | Title of Article | |||
| K. Kakimoto, T. Umehara, H. Ozoe | *Molecular dynamics analysis of point defects in silicon near solid-liquid interface | |||
| Journal | Volume | Year | Pages Concerned | |
| Applied Surface Science | 2000 | 387-391 | ||
| Author | Title of Article | |||
| J. S. Szmyd, M. Jaszczur, H. Ozoe K. Kakimoto | *Numerical analysis of buoyancy driven convection and radiation from the free surface of the fluid in a vertical cylinder | |||
| Journal | Volume | Year | Pages Concerned | |
| Japn. Soc. Mech. Eng. International J. B-FLUID | 43 | 2000 | 679-685 | |
| Author | Title of Article | |||
| S. Maeda, K. Abe, H. Nakanishi, K. Terashima | *Uniformity of oxygen concentration in CZ-Si crystals depending on evaporation of SiO from free melt surface | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Jpn. Assoc. Crystal Growth | 27 | 2000 | 267-274 | |
| Author | Title of Article | |||
| S. Maeda, K. Abe, H. Nakanishi, K. Terashima | *Uniformity of oxygen concentration in CZ-Si crystals depending on evaporation of SiO from free melt surface | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Jpn. Assoc. Crystal Growth | 27 | 2000 | 267-274 | |
| Author | Title of Article | |||
| H. Nakanishi, K. Nakazato K. Terashima | *Surface Tension Variation of molten silicon measured by ring tensiometry technique and related temperature and impurity dependence | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 39 | 2000 | 6487-6492 | |
| Author | Title of Article | |||
| K. Terashima, M. Kato, S. Nishimura | *Variation of Silicon Melt Convections with Boron Addition | |||
| Journal | Volume | Year | Pages Concerned | |
| Proc. The 145th Commitee on Processing and Characterization of Crystals | 2000 | 585-591 | ||
| Author | Title of Article | |||
| T. Taishi, X. Huang, M. Kubota, T. Kajigaya, T. Fukami, K. Hoshikawa | *Heavily Boron-doped Silicon Single Crystal Growth: Constitutional Supercooling | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys | 39 | 2000 | L5-L8 | |
| Author | Title of Article | |||
| T. T aishi, X. Huang, T. Fukami K. Hoshikawa | *Dislocation-Free Czochralski Si Crystal Growth without the Dash-Necking Process: Growth from Undoped Si Melt | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys | 39 | 2000 | L191-L194 | |
| Author | Title of Article | |||
| X. Huang, T. Taishi, I. Yonenaga K. Hoshikawa | *Dislocation-Free Si crystal growth without Dash-necking using hevily B and Ge codoped Si seed | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys | 39 | 2000 | L1115-L1117 | |
| Author | Title of Article | |||
| X. Huang, T. Taishi, I. Yonenaga K. Hoshikawa | *Dislocation-Free B-Doped Si Crystal Growth without the Dash-Necking Process in Czochralski Method: Influence of B concentration | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Crystal Growth | 39 | 2000 | L1115-L1117 | |
| Author | Title of Article | |||
| T. Taishi, X. Huang, M. Kubota, T. Kajigaya T. Fukami K. Hoshikawa | *Heavily boron-doped Czochralski (CZ) silicon crystal growth: segregation and constitutional supercooling | |||
| Journal | Volume | Year | Pages Concerned | |
| Materials Science and Engineering | B72 | 2000 | 169-172 | |
| Author | Title of Article | |||
| K. Hoshikawa X. Huang | *Oxygen transportation during Czochralski silicon crystal growth | |||
| Journal | Volume | Year | Pages Concerned | |
| Materials Science and Engineering | B72 | 2000 | 73-79 | |
| Author | Title of Article | |||
| X. Huang, K. Yamahara, K. Hoshikawa | *In situ observation of the Si melt-silica glass interface concerning CZ-Si crystal growth | |||
| Journal | Volume | Year | Pages Concerned | |
| Materials Science and Engineering | B72 | 2000 | 164-168 | |
| Author | Title of Article | |||
| X. Huang, T. Wang, K. Yamahara, T. Taishi, K. Hoshikawa | *In situ Observation of the Interfacial Phase Formation at Si Melt/Silica Glass Interface | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 39 | 2000 | 3281-3285 | |
| Author | Title of Article | |||
| N. Machida, K. Hoshikawa, Y. Shimizu | *The relationship between argon gas flow on silicon melt surface and oxygen concentration in Czochralski silicon single crystals | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Jpn. Assoc. Crystal Growth | 27 | 2000 | 11-16 | |
| Author | Title of Article | |||
| Y. Misukoshi, E. Takagi, H. Okuno, R. Oshima, Y. Maeda, Y. Nagata | Preparation of platinum nanoparticles by sonochemical reduction of the Pt(IV)ions: Role of surfactants | |||
| Journal | Volume | Year | Pages Concerned | |
| Ultrasonics Sonochemistry | 8 | 2000 | 1-6 | |
| Author | Title of Article | |||
| T. Tamano, F. Hori, R. Oshima T. Hisamatsu | *Study on Behavior of Electron-Irradiation Defects and Impurities of Czochralski Silicon with Annealing by Positron Annihilation | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 40 | 2001 | 452-456 | |
| Author | Title of Article | |||
| T X. Huang, T. Taishi, I. Yonenaga K. Hoshikawa | *Dislocation-Free Czochralski Si Crystal Growth without Dash Necking: Heavily B-Doping and Lightly Doping | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. Appl. Phys. | 40 | 2001 | 12-17 | |
| Author | Title of Article | |||
| T. Motooka K. Nishihira | *Molecular dynamics simulations of defect formation during Si melt growth: A microscopic picture of V/G | |||
| Journal | Volume | Year | Pages Concerned | |
| Proc. of the Fifth Symp. on Atomic-scale Surface and Interface Dynamics. | 2001 | 117-120 | ||
| Author | Title of Article | |||
| T R. Oshima, H. Nishizawa, F. Hori, N. Fujita | *Study on atom behaviors of liquid-solid interface of silicon by HRTEM | |||
| Journal | Volume | Year | Pages Concerned | |
| Proc. of the Fifth Symp. on Atomic-scale Surface and Interface Dynamics. | 2001 | 121-126 | ||
| Author | Title of Article | |||
| X. Huang, T. Taishi, K. Hoshikawa | *Effect of B and Ge codoping on dislocation behavior in Czochralski Si crystal growth | |||
| Journal | Volume | Year | Pages Concerned | |
| Proc. of the Fifth Symp. on Atomic-scale Surface and Interface Dynamics. | 2001 | 127-132 | ||
| Author | Title of Article | |||
| Y. Wang, K. Kakimoto | *Dislocations and crystal-melt interfaces in the melting process of silicon | |||
| Journal | Volume | Year | Pages Concerned | |
| Proc. of the Fifth Symp. on Atomic-scale Surface and Interface Dynamics. | 2001 | 133-140 | ||
| Author | Title of Article | |||
| K. Terashima, H. Nakanishi, K. Abe, S. Maeda | *Fundamental properties of Si melts and the uniformity of Si crystals | |||
| Journal | Volume | Year | Pages Concerned | |
| Proc. of the Fifth Symp. on Atomic-scale Surface and Interface Dynamics. | 2001 | 141-144 | ||
| Author | Title of Article | |||
| K. Kakimoto | *Oxygen distribution in silicon melt under inhomogeneous transverse magnetic fields | |||
| Journal | Volume | Year | Pages Concerned | |
| Proc. of the Fifth Symp. on Atomic-scale Surface and Interface Dynamics. | 2001 | 145-150 | ||
| Author | Title of Article | |||
| S. Hirayama, F. Watanabe T. Takahashi | *Surface Diffusivity Measurements on Boron Covered Silicon Surfaces by Field Emission | |||
| Journal | Volume | Year | Pages Concerned | |
| Proc. of the Fifth Symp. on Atomic-scale Surface and Interface Dynamics. | 2001 | 151-158 | ||
| Author | Title of Article | |||
| H. Nakanishi, K. Abe, S. Maeda, K. Terashima | *Si melt flow in a crucible during crystal pulling process depending on surface tension variation | |||
| Journal | Volume | Year | Pages Concerned | |
| Proc. of the Fifth Symp. on Atomic-scale Surface and Interface Dynamics. | 2001 | 159-166 | ||
| Author | Title of Article | |||
| S. Maeda, K. Abe, H. Nakanishi, K. Terashima | *Uniformity of Oxygen atom distribution related to evaporation of SiO from melt surface | |||
| Journal | Volume | Year | Pages Concerned | |
| Proc. of the Fifth Symp. on Atomic-scale Surface and Interface Dynamics. | 2001 | 167-176 | ||
| Author | Title of Article | |||
| K. Hoshikawa, X. Huang, S. Sakaia, S. Oishi, T. Taishi, K. Yamahara | *Dynamic behavior of oxygen, heavily doped other impurities and grown-in defect in the Czochralski Si crystal | |||
| Journal | Volume | Year | Pages Concerned | |
| Proc. of the Fifth Symp. on Atomic-scale Surface and Interface Dynamics. | 2001 | 177-182 | ||
| Author | Title of Article | |||
| S. Yasuhiro, M. W. Li, N. Imaishi | *Role of the Marangoni effect on silicon melt flow | |||
| Journal | Volume | Year | Pages Concerned | |
| Proc. of the Fifth Symp. on Atomic-scale Surface and Interface Dynamics. | 2001 | 183-186 | ||
| Author | Title of Article | |||
| K. Abe, K. Terashima, T. Matsumoto, S. Maeda, H. nakanishi | *Oxygen concentration control of CZ Si crystal | |||
| Journal | Volume | Year | Pages Concerned | |
| Memoirs of Shonan Institute of Technology | 35 | 2001 | 37-46 | |
| Author | Title of Article | |||
| S. Maeda, K. Abe, H. Nakanishi, M. Kato, K. Terashima | *Uniformity of oxygen concentration in CZ-Si single crystals | |||
| Journal | Volume | Year | Pages Concerned | |
| Memoirs of Shonan Institute of Technology | 35 | 2001 | 47-62 | |
| Author | Title of Article | |||
| H. Nakanishi, K. Abe, S. Maeda, K. Terashima | *Surface tension variation of molten silicon measured by ring tensiometry technique and computer simulation of the melt flow in a crucible with the consideration of the Marangoni effect | |||
| Journal | Volume | Year | Pages Concerned | |
| Memoirs of Shonan Institute of Technology | 35 | 2001 | 62-74 | |
| Author | Title of Article | |||
| N. Imaishi,, S. Yasuhiro Y. Akiyama, S. Yoda | Oscillatory Marangoni flow in half-zone liquid bridge of low Pr fluid | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Crystal Growth | In press | 2001 | ||
| Author | Title of Article | |||
| M. W. Li, Y. R. Li, N. Imaishi, T. Tsukada | *Global simulation of a silicon Czochralski furnace | |||
| Journal | Volume | Year | Pages Concerned | |
| Submitted to J. Crystal Growth | 2001 | |||
| Author | Title of Article | |||
| M. W. Li, Y. R. Li, N. Imaishi, Y. Akiyama, T. Tsukada | *Global simulation of a small silicon Czochralski furnace | |||
| Journal | Volume | Year | Pages Concerned | |
| To be submitted to J. Crystal Growth | ||||
| Author | Title of Article | |||
| M. W. Li, Y. R. Li, Y. Akiyama, N. Imaishi | *Global simulation of a small silicon Czochralski furnace | |||
| Journal | Volume | Year | Pages Concerned | |
| To be submitted to J. Chem. Eng. Jpn | ||||
| Author | Title of Article | |||
| T. Motooka,, K. Nishihira, S. Munetoh, K. Moriguchi, A. Shintani | *Reply to "Comment on 'Molecular-dynamics simulations of solid-phase epitaxy of Si: Growth mechanisms' | |||
| Journal | Volume | Year | Pages Concerned | |
| to be published in Phys. Rev. B | 2001 | |||
| Author | Title of Article | |||
| S. Munetoh, K. Moriguchi, A. Shintani, K. Nisihira, T. Motooka | *Molecular dynamics simulations of solid phase epitaxy of Si: Defect formation processes | |||
| Journal | Volume | Year | Pages Concerned | |
| to be published in Phys. Rev. B | 2001 | |||
| Author | Title of Article | |||
| S. Munetoh, K. Moriguchi, K. Kamei, A. Shintani, T. Motooka | *Epitaxial growth of a low-density framework form of crystalline silicon | |||
| Journal | Volume | Year | Pages Concerned | |
| to be published in Phys. Rev. Left. | 2001 | |||
| Author | Title of Article | |||
| Y. R. Wang, K. Kakimoto | *An in-situ observation of dislocations and crystal-melt interface during the melting of silicon | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Crystal Growth. | In press | 2001 | ||
| Author | Title of Article | |||
| Y. R. Wang, K. Kakimoto | *An in-situ X-ray topography observation of dislocations, crystal-melt interface and melting of silicon | |||
| Journal | Volume | Year | Pages Concerned | |
| Microelectronic Engineering. | In press | 2001 | ||
| Author | Title of Article | |||
| Y. R. Wang, K. Kakimoto | *The dislocation dependence of the crystal-melt interface shape: An in-situ X-ray Topography Study | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Crystal Growth | accepted | 2001 | ||
| Author | Title of Article | |||
| K. Kakimoto | *Oxygen distribution in silicon melt under inhomogeneous transverse-magnetic fields | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Crystal Growth | accepted | 2001 | ||
| Author | Title of Article | |||
| S. Maeda, M. Kato, K. Terashima | *Uniformity of silicon Czochralski crystals grown under controlled conditions | |||
| Journal | Volume | Year | Pages Concerned | |
| Submitted to J. Crystal Growth | ||||
| Author | Title of Article | |||
| S. Nishimura K. Terashima | *Variation of silicon melt viscosity with boron addition | |||
| Journal | Volume | Year | Pages Concerned | |
| To be ubmitted to J. Crystal Growth | ||||
| Author | Title of Article | |||
| T. Tsuchiya, K. Terashima | *The silicon melt density variation measured by Archimedean Technique with observing infrared signal | |||
| Journal | Volume | Year | Pages Concerned | |
| To be ubmitted to J. Crystal Growth | ||||
| Author | Title of Article | |||
| K.. Terashima, H. Noguchi | *The effect of boron addition on the generation of extended defects | |||
| Journal | Volume | Year | Pages Concerned | |
| To be ubmitted to J. Crystal Growth | ||||
| Author | Title of Article | |||
| K.. Terashima, H. Noguchi | The effects of boron impurity to the extended defects in CZ silicon crystals grown under interstitial rich conditions | |||
| Journal | Volume | Year | Pages Concerned | |
| To be ubmitted to J. Crystal Growth | ||||
| Author | Title of Article | |||
| T. Irisawa, M. Mikami, K. Kakimoto, Y. Saito | Computer simulation of heat and mass transfer in crystal growth | |||
| Journal | Volume | Year | Pages Concerned | |
| In "Crystal Growth on Computer", Jpn. Assoc. Crystal Growth, 1996 | ||||
| Author | Title of Article | |||
| K. Kakimoto | Use of an inhomogeneous magnetic fields for silicon crystal growth | |||
| Journal | Volume | Year | Pages Concerned | |
| HIGH MAGNETIC FIELDS:APPLICATIONS･GENERATION･MATERIALS, World Scientific Edited by Hans J. Schneider-Muntau, 1997 | ||||
| Author | Title of Article | |||
| K. Kakimoto | Phase Diagram | |||
| Journal | Volume | Year | Pages Concerned | |
| In "Fundamentals of Crystal Growth", J. S. Appl. Phys., 1997 | ||||
| Author | Title of Article | |||
| T. Irisawa, M. Mikami, K. Kakimoto, Y. Saito | Computer simulation of heat and mass transfer in crystal growth | |||
| Journal | Volume | Year | Pages Concerned | |
| In "Crystal Growth on Computer", Jpn. Assoc. Crystal Growth, 1997 | ||||
| Author | Title of Article | |||
| K. Hoshikawa | Oxygen concentration control and magnetic field application technologies in Czochralski silicon crystal growth, | |||
| Journal | Volume | Year | Pages Concerned | |
| In "Trend in Material Science:Edited by S. Radhakrishna, Narosa Publishing House, 1997 | ||||
| Author | Title of Article | |||
| K. Kakimoto | Crystal Growth and its Mechanism | |||
| Journal | Volume | Year | Pages Concerned | |
| In "Fundamentals of Crystal Growth", Jpn. Assoc. Crystal Growth, 1998 | ||||
| Author | Title of Article | |||
| K. Terashima | Chapter 2:Essential interest in Si melt fundamentals pp. 15-46 | |||
| Journal | Volume | Year | Pages Concerned | |
| In "Recent Development of Bulk Crystal Growth 1998", edited by M. Issiki, Research Signpost Publ., 1998 | ||||
| Author | Title of Article | |||
| K. Hoshikawa | Crystal Growth Technology supporting present Electronics", | |||
| Journal | Volume | Year | Pages Concerned | |
| Co edited by T. Fukuda and K. Hosikawa: Baifu-kan, 1998 | ||||
| Author | Title of Article | |||
| K. Hoshikawa, X. Huang | *Si melt growth:oxygen transportation during Czochralski growth, pp. 23-32 | |||
| Journal | Volume | Year | Pages Concerned | |
| in "Crystalline Silicon", edited by R. Hull, Inspec publication System, 1999 | ||||
| Author | Title of Article | |||
| K. Kakimoto | Numerical simulation of melt flow, | |||
| Journal | Volume | Year | Pages Concerned | |
| in "Computational Mechanics 6", Yokendo Publ., 1999 | ||||
| Author | Title of Article | |||
| K. Terashima | 1.1 Si melt: density, surface tension and viscosity pp. 3-7 | |||
| Journal | Volume | Year | Pages Concerned | |
| R. Hull ed. Properties of crystalline silicon Emis Datareviews Series No. 20, INSPEC publication | ||||
| Author | Title of Article | |||
| K. Kakimoto | Si melt convection in a crucible | |||
| Journal | Volume | Year | Pages Concerned | |
| R. Hull ed. Properties of crystalline silicon Emis Datareviews Series No. 20, INSPEC publication | ||||
| Author | Title of Article | |||
| K. Kakimoto | Preparation of Specimens 2 | |||
| Journal | Volume | Year | Pages Concerned | |
| In "Fundamentals of Crystal Growth", Maruzen Experimental Physics No. 4, Maruzen, 2000 | ||||
| Author | Title of Article | |||
| K. Hoshikawa | Bulk Crystal Growth Technique | |||
| Journal | Volume | Year | Pages Concerned | |
| In "Preparation of Specimens", Maruzen Experimental Physics No. 4, Maruzen, 2000 | ||||
| Author | Title of Article | |||
| N. Imaishi, K. Kakimoto | Convective instability in crystal growth system | |||
| Journal | Volume | Year | Pages Concerned | |
| In "Annual Review of Heat Transfer, vol. 12", Begel House Inc. Publisher, 2001 | ||||