| 1.Research Institution | University of Tokyo | |
| 2.Research Area | Physical and Engineering Sciences | |
| 3.Research Field | Atomic-Scale Surface and Interface Dynamics | |
| 4.Term of Project | FY1996〜FY2000 | |
| 5.Project Number | 96P00201 | |
| 6.Title of Project | Self-assembled Nanostructures and Its control |
| Name | Institution,Department | Title of Position |
| Yasuhiko Arakawa | RCAST, University of Tokyo | Professor |
8.Core Members
| Names | Institution,Department | Title of Position |
| Tatau Nishinaga | Meijo University, Faculty of Eng. | Professor |
| Toshiro HIramoto | IIS, University fo Tokyo | Professor |
| Tatsuro Hanajiri | Toyo Universituy, Faculty of Eng. | Associate Professor |
9.Cooperating Researchers
| Names | Institution,Department | Title of Position |
| Yoshiaki Nakano | University of Tokyo Faculty of Eng. | Professor |
| Kazuhiko Hirakawa | IIS, University of Tokyo, IIS | Associate Professor |
| Takao Someya | RCAST, University of Tokyo | Associate Professor |
10.Summary of Research Results
|
In this project, we investigate growth dynamics of self-assembled nanostructures usingepitaxial growth method such as MBE and MOCVD to establish controlling of formation process of quantum dots and quantum wires. By understanding surface migration of Ga-toms under various As^pressure, the formation process of pyramid-shaped Ga nanostructures was well controlled by MBE. Furthermore, a novel growth method of microchannel epitaxy was established on patterned insulating thin films on GaAs substrate. We have investigated InGaN self-assembled quantum dots (QDs) on a GaN layer without any surfactants, using atmospheric-pressure MOCVD. The average diameter was as small as 8.4nm and a strong light emission was observed at room temperature. In order to increase the density of InGaN QDs, a stacked QD structure was grown. We fabricated the laser structure with the stacked InGaN QDs embedded in the active layer. Room temperature operation of blue InGaN QD lasers was achieved under optical excitation. Carrier confinement in QDS was investigated using near-field micro-photoluminescence measurement: A very sharp spectral line emitted from excitons in individual InGaN QDs was observed. We also investigated the selective growth of InGaN (GaN) QDs on GaN(AlGaN) hexagonal pyramids. Micro-photoluminescence intensity images with a spatial resolution of a few hundred nanometers show that the emission was only from the top of the hexagonal pyramids. Growth of high quality GaN/AlGaN or InGaN/AlGaN hetero-interface led to various important device structures. We achieved room temperature operation in InGaN VCSELs[8Intersubband transitions and transport of GaN/AlGaN heterostructiures were also investigated. InAs quantum dots which can give a light emission at 1.5μm and type II GaSb/GaAs QDs were also successfully formed. Single QD spectroscopy through PL and PLE showed various important features of the QDs. |
11.Key Words
(1)Quantum dot、(2)Selective growth、(3)SK growth mode
(4)GaN、(5)MOCVD、(6)MBE
(7)Microchannel epitaxy、(8)self-assembling、(9)nanotechnology
12.References
| Author | Title of Article | |||
| B. Shen, T. Someya, O. Moriwaki, and Y. Arakawa | Effect of carrier confinement on photoluminescence from modulation-doped Al(x)Ga(x-1)N/GaN heterostructures | |||
| Journal | Volume | Year | Pages Concerned | |
| Applied Physics Letters, Vol. 76, No. 6, pp. 679-681 | 76 | 2000.02 | 679 | |
| Author | Title of Article | |||
| B. Shen, T. Someya, and Y. Arakawa | Influence of strain relaxation of the Al(x)Ga(1-x)N barrier on transport properties of the two-dimensional electron gas in modulation-doped Al(x)Ga(1-x)N/GaN heterostructures | |||
| Journal | Volume | Year | Pages Concerned | |
| Applied Physics Letters, vol. 76, No. 19, pp. 2746-2748 | 76 | 2000.5 | 2746 | |
| Author | Title of Article | |||
| Y. Arakawa, T. Someya, and K. Tachibana(Invited) | Progress in GaN-Based Nanostructures for Blue Light Emitting Quantum Dot Lasers and Vertical Cavity Surface Emitting Lasers | |||
| Journal | Volume | Year | Pages Concerned | |
| IEICE TRANS. ELECTRON., Vol.E83-C, No.4 | E83-C | 2000.04 | ||
| Author | Title of Article | |||
| Y. Arakawa, K. Okamoto | "Advanced optical devices for next generation high-speed communication systems and photonic networks", | |||
| Journal | Volume | Year | Pages Concerned | |
| IEICE Trans. Electron. vol. E83-C, 787-788, | E83-C | 2000.06 | 787 | |
| Author | Title of Article | |||
| Y. Toda, T. Sugimoto M. Nishioka, and Y. Arakawa | Near-field coherent excitation spectroscopy of InGaAs/GaAs self-assembled quantum dots | |||
| Journal | Volume | Year | Pages Concerned | |
| Applied Physics Letters, Vol. 76, No. 26, pp. 3887-3889 | 76 | 2000.06.26 | 3887 | |
| Author | Title of Article | |||
| J. C. Harris, T. Someya, K. Hoshino, S. Kako and Y. Arakawa | Photoluminescence of GaN Quantum Wells with AlGaN Barriers of Hight Aluminium Content | |||
| Journal | Volume | Year | Pages Concerned | |
| Physica. stat. sol. (a) 180, 339 | 2000.07 | 339 | ||
| Author | Title of Article | |||
| 荒川泰彦(招待論文) | ナノオプトエレクトロニクスの展望 | |||
| Journal | Volume | Year | Pages Concerned | |
| 光学 特集ナノ量子構造デバイスと超高速光技術, Vol. 8, 474 | 8 | 2000.08.10 | 474 | |
| Author | Title of Article | |||
| J. C. Harris, T. Someya, S. Kako, K. Hoshino, and Y. Arakawa | Time-resolved photoluminescence of GaN/Al0.5Ga0.5N quantum wells | |||
| Journal | Volume | Year | Pages Concerned | |
| Applied Physics Letters, Vol. 77, No. 7, pp. 1005-1007 | 77 | 2000.08.14 | 1005 | |
| Author | Title of Article | |||
| T. Yamamoto, S. Inoue and M. Ozaki | On the limitation of the current sheet approximation in estimation of the northward Bz associated field-aligned currents | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Geophys. Res., Vol. 105, No. A9, pp. 21143-21157 | 105 | 2000. 9 | 21143 | |
| Author | Title of Article | |||
| K. Hoshino, J. M. Zanardi Ocampo, N. Kamata, K. Yamada, M. Nishioka, Y. Arakawa | Absence of nonradiative recombination centers in Modulation-doped quantum wells revealed by two-wavelength excited photoluminescence | |||
| Journal | Volume | Year | Pages Concerned | |
| Physica E Vol. 7, No. 3-4, pp. 563-566 | 7 | 2000.5 | 563 | |
| Author | Title of Article | |||
| Y. Toda, T. Sugimoto, M. Nishioka, and Y. Arakawa | Near-field coherent excitation spectroscopy of InGaAs/GaAs self-assembled quantum dots | |||
| Journal | Volume | Year | Pages Concerned | |
| Appl. Phys. Lett. Vol. 76, No. 26, pp. 3887-3889 | 76 | 2000.6 | 3887 | |
| Author | Title of Article | |||
| Y. Toda, and Y. Arakawa | Near-field spectroscopy of a single InGaAs self-assembled quantum dots | |||
| Journal | Volume | Year | Pages Concerned | |
| IEEE Journal of Selected Topics in Quantum electronics Vol. 6 No. 3, pp. 528-533 | 6 | 2000.5/6 | 528 | |
| Author | Title of Article | |||
| Y. Toda, O. Moriwaki, M. Nishioka, and Y. Arakawa | Resonant Raman scattering of optical phonons in self-assembled quantum dots | |||
| Journal | Volume | Year | Pages Concerned | |
| Physica E Vol. 8, pp. 328-332 | 8 | 2000.12 | 328 | |
| Author | Title of Article | |||
| O. Moriwaki, T. Someya, K. Tachibana, S. Ishida, and Y. Arakawa | Narrow photoluminescence peaks from localized states in InGaN quantum dot structures | |||
| Journal | Volume | Year | Pages Concerned | |
| Appl. Phys. Lett. Vol. 76, No. 17, pp. 2361-2363 | 76 | 2000.4 | 2361 | |
| Author | Title of Article | |||
| K. Tachibana, T. Someya, R. Werner, A. Forchel, and Y. Arakawa | MOCVD growth of a stacked InGaN quantum dot structure and its lasing oscillation at room temperature | |||
| Journal | Volume | Year | Pages Concerned | |
| Physica E, vol. 7, No. 3-4, pp. 944-948 | 7 | 2000.5 | 944 | |
| Author | Title of Article | |||
| K. Tachibana, T. Someya, S. Ishida, and Y. Arakawa | Selective growth of InGaN quantum dot structures and their microphotoluminescence at room temperature | |||
| Journal | Volume | Year | Pages Concerned | |
| Appl. Phys. Lett. Vol. 76, No. 22, pp. 3212-3214 | 76 | 2000.5 | 3212 | |
| Author | Title of Article | |||
| K. Tachibana, T. Someya, and Y. Arakawa | Growth of InGaN self-assembled quantum dots and their application to lasers | |||
| Journal | Volume | Year | Pages Concerned | |
| IEEE J. Selected Topics in Quantum Electronics Vol. 6, No. 3, 475-481 | 6 | 2000.5 | 475 | |
| Author | Title of Article | |||
| K. Tachibana, T. Someya, S. Ishida, and Y. Arakawa | Formation of uniform 10-nm-scale InGaN quantum dots by selective MOCVD growth and their micro-photoluminescence intensity images | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Crystal Growth Vol. 221, pp. 576-580 | 221 | 2000.12 | 576 | |
| Author | Title of Article | |||
| K. Tachibana, T. Someya, S. Ishida, and Y. Arakawa | High-density InGaN quantum dots fabricated by selective MOCVD growth | |||
| Journal | Volume | Year | Pages Concerned | |
| IPAP Conference Seriesl, pp. 417-420 | 2000.12 | 417 | ||
| Author | Title of Article | |||
| J. Tatebayashi, S. Ishida, M. Nishioka, T. Someya, and Y. Arakawa | Area-Controlled Growth of InAs Quantum Dots Selective MOCVD | |||
| Journal | Volume | Year | Pages Concerned | |
| Jpn. J. of Appl. Phys. vol. 39, part1, No. 4B, pp. 2344-2346 | 39 | 2000.4 | 2344 | |
| Author | Title of Article | |||
| J. Tatebayashi, M. Nishioka, T. Someya, and Y. Arakawa | Area-controlled growth of InAs Quantum dots and improvement of density and size distribution | |||
| Journal | Volume | Year | Pages Concerned | |
| Appl. Phys. Lett., Vol. 77, No. 21, pp. 3382-3384 | 77 | 2000.11 | 3382 | |
| Author | Title of Article | |||
| T. Someya, K. Hoshino, J. C. Harris, K. Tchibana, and Y. Arakawa | Photoluminescence from sub-monolayer-thick GaN/AlGaN quantum wells | |||
| Journal | Volume | Year | Pages Concerned | |
| Applied PhysicsLetters Vol. 77, No. 9, pp. 1336-1338 | 77 | 2000.8 | 1336 | |
| Author | Title of Article | |||
| T. Someya, K. Hoshino, J. C. Harris, K. Tachibana, S. Kako, and Y. Arakawa | Emission at 247 nm from GaN quantum wells grown by MOCVD | |||
| Journal | Volume | Year | Pages Concerned | |
| MaterialResearch Society Symposium Proceedings Vol. 595, W12. 8. 1-W12. 8. 5 | 595 | 2000.7 | ||
| Author | Title of Article | |||
| 染谷隆夫, 荒川泰彦 | 次世代窒化物半導体レーザーの展望-青色面発光レーザーと青色量子ドットレーザー- | |||
| Journal | Volume | Year | Pages Concerned | |
| 応用物理、第69巻、第10号、pp. 1196-1199 | 69 | 2000.10 | 1196 | |
| Author | Title of Article | |||
| Hiroaki Watabe, Kaoru Arakawa, and Yasuhiko Arakawa | Nonlinear Inverse Filter Using ε-Filter and Its Applications to Image Restoration | |||
| Journal | Volume | Year | Pages Concerned | |
| IEICE Trans. Fundamentals, vol. E 83-A, no. 2, pp. 283-290 | E83-A | 2000.2 | 283 | |
| Author | Title of Article | |||
| J. M. Z. Ocampo, N. Kamata, K. Hoshino, M. Hirasawa, K. Yamada, M. Nishioka, and Y Arakawa | Spectroscopic discrimination of nonradiative centers in quantum wells by two-wavelength excited photoluminescence | |||
| Journal | Volume | Year | Pages Concerned | |
| J. CrystalGrowth, Vol. 210, pp. 238-241 | 210 | 2000. 2 | 238 | |
| Author | Title of Article | |||
| J. M. Z. Ocampo, N. Kamata, K. Hoshino, K. Endoh, K. Yamada, M. Nishioka, T. Someya and Y Arakawa | Spectroscopy of nonradiative recombination centers in quantum wells by two-wavelength excited photoluminescence | |||
| Journal | Volume | Year | Pages Concerned | |
| J. Lumin., Vol. 87-89, pp. 363-365 | 87 | 2000. 5 | 363 | |
| Author | Title of Article | |||
| Z. W. Zheng, B. Shen, R. Zhang, Y. S. Gui, C. P. Jiang, Z. X. Ma, S. L. Giuo, Y. SHi, T SOmeya and Y Arakawa | Occupation of the double subbands by the two-dimensional electron gas in the triangular quantum well at AlGaN/GaN heterostructures | |||
| Journal | Volume | Year | Pages Concerned | |
| Phys. Rev. B, 62, R7739-7745 | 62 | 2000.5 | ||
| Author | Title of Article | |||
| R. Cingolani, M. De Giorgi, R. Rinaldi, H. Lipsanen, M. Sopanen, K. Uchida, N. Miura and Y Arakawa | Effects of electron-hole correlation in quantum dots under high magnetic field (up to 45T) | |||
| Journal | Volume | Year | Pages Concerned | |
| Physica E, vol. 7, No. 3-4, pp. 346-349 | 7 | 2000.5 | 346 | |
| Author | Title of Article | |||
| Ph. Lelong, K. Suzuki, G. Bastard, H. Sakaki, and Y. Arakawa | Enhancement of the Coulomb correlations in typeII quantum dots | |||
| Journal | Volume | Year | Pages Concerned | |
| Physica E, vol. 7, No. 3-4, pp. 393-397 | 7 | 2000.5 | 393 | |
| Author | Title of Article | |||
| B. Shen, T. SOmeya, O. Moriwali, and Y. Arakawa | Photoluminescence from two-dimensional electron gas in modulation-doped AlGaN/GaN heterostructures | |||
| Journal | Volume | Year | Pages Concerned | |
| Physica E, vol. 7, No. 3-4, pp. 939-943 | 7 | 2000.5 | 939 | |
| Author | Title of Article | |||
| Xin-Qi Li and Y. Arakawa | Single qubit from two coupled quantum dots: An approach to semiconductor quantum computations | |||
| Journal | Volume | Year | Pages Concerned | |
| Phys. Rev. A, Vol. 63 012302, | 63 | 2000.12 | ||
| Author | Title of Article | |||
| Y. Arakawa(Invited) | Progress in GaN-based Quantum Dots and Heterostructures | |||
| Journal | Volume | Year | Pages Concerned | |
| International Workshop on Novel Gain Materials, Wueraburug | 2001.2 | |||
| Author | Title of Article | |||
| Y. Arakawa, T. Someya, and K. Tachibana | Progress in Growth and Physics of Nitride-Based Quantum Dots (Editor's Choice) | |||
| Journal | Volume | Year | Pages Concerned | |
| Phys. Stat. Sol(B), 224, 1-11 | 2001.1 | 1 | ||
| Author | Title of Article | |||
| Y. Arakawa(Invited) | ||||
| Journal | Volume | Year | Pages Concerned | |
| Photonics West, SPIE | 2001.1 | |||
| Author | Title of Article | |||
| K. Suzuki and Y. Arakawa | Near 1.3mm EMission at Room Temeperature from InAsS/GaAs Self-Assembled Quantum Dots on GaAs Substrates | |||
| Journal | Volume | Year | Pages Concerned | |
| phys. stat. sol. (b)224, 139-142(2001) | 2001 | 139 | ||
| Author | Title of Article | |||
| Arakawa, T. Someya, and K. Tachibana | Progress in Growth and Physics of Nitride-Based Quantum Dots | |||
| Journal | Volume | Year | Pages Concerned | |
| phys. Sta. Sol. (b)224, 1-11(2001) | 2001 | 1 | ||
| Author | Title of Article | |||
| R. Rinaldi, M. DeVittorio, R. CIngolani, U. Hohenester, E. Molinari, H. Lipsane, I Tulkki I Ahonelto K Uchida N | Correlation Effects in Strain-Induced Quantum Dots | |||
| Journal | Volume | Year | Pages Concerned | |
| phys. Sta. Sol. (b)224, 1-11(2001) | 2001 | 1 | ||