Summary of Research Project Results Under the JSPS FY2000
"Research for the future Program"



1.Research Institution University of Tokyo
 
2.Research Area Physical and Engineering Sciences
 
3.Research Field Atomic-Scale Surface and Interface Dynamics
 
4.Term of Project FY1996〜FY2000
 
5.Project Number 96P00201
 
6.Title of Project Self-assembled Nanostructures and Its control

7.Projetct Leader
Name Institution,Department Title of Position
Yasuhiko Arakawa RCAST, University of Tokyo Professor

8.Core Members

Names Institution,Department Title of Position
Tatau Nishinaga Meijo University, Faculty of Eng. Professor
Toshiro HIramoto IIS, University fo Tokyo Professor
Tatsuro Hanajiri Toyo Universituy, Faculty of Eng. Associate Professor

9.Cooperating Researchers

Names Institution,Department Title of Position
Yoshiaki Nakano University of Tokyo Faculty of Eng. Professor
Kazuhiko Hirakawa IIS, University of Tokyo, IIS Associate Professor
Takao Someya RCAST, University of Tokyo Associate Professor

10.Summary of Research Results

In this project, we investigate growth dynamics of self-assembled nanostructures usingepitaxial growth method such as MBE and MOCVD to establish controlling of formation process of quantum dots and quantum wires. By understanding surface migration of Ga-toms under various As^pressure, the formation process of pyramid-shaped Ga nanostructures was well controlled by MBE. Furthermore, a novel growth method of microchannel epitaxy was established on patterned insulating thin films on GaAs substrate. We have investigated InGaN self-assembled quantum dots (QDs) on a GaN layer without any surfactants, using atmospheric-pressure MOCVD. The average diameter was as small as 8.4nm and a strong light emission was observed at room temperature. In order to increase the density of InGaN QDs, a stacked QD structure was grown. We fabricated the laser structure with the stacked InGaN QDs embedded in the active layer. Room temperature operation of blue InGaN QD lasers was achieved under optical excitation. Carrier confinement in QDS was investigated using near-field micro-photoluminescence measurement: A very sharp spectral line emitted from excitons in individual InGaN QDs was observed. We also investigated the selective growth of InGaN (GaN) QDs on GaN(AlGaN) hexagonal pyramids. Micro-photoluminescence intensity images with a spatial resolution of a few hundred nanometers show that the emission was only from the top of the hexagonal pyramids. Growth of high quality GaN/AlGaN or InGaN/AlGaN hetero-interface led to various important device structures. We achieved room temperature operation in InGaN VCSELs[8Intersubband transitions and transport of GaN/AlGaN heterostructiures were also investigated. InAs quantum dots which can give a light emission at 1.5μm and type II GaSb/GaAs QDs were also successfully formed. Single QD spectroscopy through PL and PLE showed various important features of the QDs.

11.Key Words

(1)Quantum dot、(2)Selective growth、(3)SK growth mode
(4)GaN、(5)MOCVD、(6)MBE
(7)Microchannel epitaxy、(8)self-assembling、(9)nanotechnology

12.References

[Reference Articles]
Author Title of Article
B. Shen, T. Someya, O. Moriwaki, and Y. Arakawa Effect of carrier confinement on photoluminescence from modulation-doped Al(x)Ga(x-1)N/GaN heterostructures
Journal Volume Year Pages Concerned
Applied Physics Letters, Vol. 76, No. 6, pp. 679-681 76 2000.02 679

Author Title of Article
B. Shen, T. Someya, and Y. Arakawa Influence of strain relaxation of the Al(x)Ga(1-x)N barrier on transport properties of the two-dimensional electron gas in modulation-doped Al(x)Ga(1-x)N/GaN heterostructures
Journal Volume Year Pages Concerned
Applied Physics Letters, vol. 76, No. 19, pp. 2746-2748 76 2000.5 2746

Author Title of Article
Y. Arakawa, T. Someya, and K. Tachibana(Invited) Progress in GaN-Based Nanostructures for Blue Light Emitting Quantum Dot Lasers and Vertical Cavity Surface Emitting Lasers
Journal Volume Year Pages Concerned
IEICE TRANS. ELECTRON., Vol.E83-C, No.4 E83-C 2000.04  

Author Title of Article
Y. Arakawa, K. Okamoto "Advanced optical devices for next generation high-speed communication systems and photonic networks",
Journal Volume Year Pages Concerned
IEICE Trans. Electron. vol. E83-C, 787-788, E83-C 2000.06 787

Author Title of Article
Y. Toda, T. Sugimoto M. Nishioka, and Y. Arakawa Near-field coherent excitation spectroscopy of InGaAs/GaAs self-assembled quantum dots
Journal Volume Year Pages Concerned
Applied Physics Letters, Vol. 76, No. 26, pp. 3887-3889 76 2000.06.26 3887

Author Title of Article
J. C. Harris, T. Someya, K. Hoshino, S. Kako and Y. Arakawa Photoluminescence of GaN Quantum Wells with AlGaN Barriers of Hight Aluminium Content
Journal Volume Year Pages Concerned
Physica. stat. sol. (a) 180, 339   2000.07 339

Author Title of Article
荒川泰彦(招待論文) ナノオプトエレクトロニクスの展望
Journal Volume Year Pages Concerned
光学 特集ナノ量子構造デバイスと超高速光技術, Vol. 8, 474 8 2000.08.10 474

Author Title of Article
J. C. Harris, T. Someya, S. Kako, K. Hoshino, and Y. Arakawa Time-resolved photoluminescence of GaN/Al0.5Ga0.5N quantum wells
Journal Volume Year Pages Concerned
Applied Physics Letters, Vol. 77, No. 7, pp. 1005-1007 77 2000.08.14 1005

Author Title of Article
T. Yamamoto, S. Inoue and M. Ozaki On the limitation of the current sheet approximation in estimation of the northward Bz associated field-aligned currents
Journal Volume Year Pages Concerned
J. Geophys. Res., Vol. 105, No. A9, pp. 21143-21157 105 2000. 9 21143

Author Title of Article
K. Hoshino, J. M. Zanardi Ocampo, N. Kamata, K. Yamada, M. Nishioka, Y. Arakawa Absence of nonradiative recombination centers in Modulation-doped quantum wells revealed by two-wavelength excited photoluminescence
Journal Volume Year Pages Concerned
Physica E Vol. 7, No. 3-4, pp. 563-566 7 2000.5 563

Author Title of Article
Y. Toda, T. Sugimoto, M. Nishioka, and Y. Arakawa Near-field coherent excitation spectroscopy of InGaAs/GaAs self-assembled quantum dots
Journal Volume Year Pages Concerned
Appl. Phys. Lett. Vol. 76, No. 26, pp. 3887-3889 76 2000.6 3887

Author Title of Article
Y. Toda, and Y. Arakawa Near-field spectroscopy of a single InGaAs self-assembled quantum dots
Journal Volume Year Pages Concerned
IEEE Journal of Selected Topics in Quantum electronics Vol. 6 No. 3, pp. 528-533 6 2000.5/6 528

Author Title of Article
Y. Toda, O. Moriwaki, M. Nishioka, and Y. Arakawa Resonant Raman scattering of optical phonons in self-assembled quantum dots
Journal Volume Year Pages Concerned
Physica E Vol. 8, pp. 328-332 8 2000.12 328

Author Title of Article
O. Moriwaki, T. Someya, K. Tachibana, S. Ishida, and Y. Arakawa Narrow photoluminescence peaks from localized states in InGaN quantum dot structures
Journal Volume Year Pages Concerned
Appl. Phys. Lett. Vol. 76, No. 17, pp. 2361-2363 76 2000.4 2361

Author Title of Article
K. Tachibana, T. Someya, R. Werner, A. Forchel, and Y. Arakawa MOCVD growth of a stacked InGaN quantum dot structure and its lasing oscillation at room temperature
Journal Volume Year Pages Concerned
Physica E, vol. 7, No. 3-4, pp. 944-948 7 2000.5 944

Author Title of Article
K. Tachibana, T. Someya, S. Ishida, and Y. Arakawa Selective growth of InGaN quantum dot structures and their microphotoluminescence at room temperature
Journal Volume Year Pages Concerned
Appl. Phys. Lett. Vol. 76, No. 22, pp. 3212-3214 76 2000.5 3212

Author Title of Article
K. Tachibana, T. Someya, and Y. Arakawa Growth of InGaN self-assembled quantum dots and their application to lasers
Journal Volume Year Pages Concerned
IEEE J. Selected Topics in Quantum Electronics Vol. 6, No. 3, 475-481 6 2000.5 475

Author Title of Article
K. Tachibana, T. Someya, S. Ishida, and Y. Arakawa Formation of uniform 10-nm-scale InGaN quantum dots by selective MOCVD growth and their micro-photoluminescence intensity images
Journal Volume Year Pages Concerned
J. Crystal Growth Vol. 221, pp. 576-580 221 2000.12 576

Author Title of Article
K. Tachibana, T. Someya, S. Ishida, and Y. Arakawa High-density InGaN quantum dots fabricated by selective MOCVD growth
Journal Volume Year Pages Concerned
IPAP Conference Seriesl, pp. 417-420   2000.12 417

Author Title of Article
J. Tatebayashi, S. Ishida, M. Nishioka, T. Someya, and Y. Arakawa Area-Controlled Growth of InAs Quantum Dots Selective MOCVD
Journal Volume Year Pages Concerned
Jpn. J. of Appl. Phys. vol. 39, part1, No. 4B, pp. 2344-2346 39 2000.4 2344

Author Title of Article
J. Tatebayashi, M. Nishioka, T. Someya, and Y. Arakawa Area-controlled growth of InAs Quantum dots and improvement of density and size distribution
Journal Volume Year Pages Concerned
Appl. Phys. Lett., Vol. 77, No. 21, pp. 3382-3384 77 2000.11 3382

Author Title of Article
T. Someya, K. Hoshino, J. C. Harris, K. Tchibana, and Y. Arakawa Photoluminescence from sub-monolayer-thick GaN/AlGaN quantum wells
Journal Volume Year Pages Concerned
Applied PhysicsLetters Vol. 77, No. 9, pp. 1336-1338 77 2000.8 1336

Author Title of Article
T. Someya, K. Hoshino, J. C. Harris, K. Tachibana, S. Kako, and Y. Arakawa Emission at 247 nm from GaN quantum wells grown by MOCVD
Journal Volume Year Pages Concerned
MaterialResearch Society Symposium Proceedings Vol. 595, W12. 8. 1-W12. 8. 5 595 2000.7  

Author Title of Article
染谷隆夫, 荒川泰彦 次世代窒化物半導体レーザーの展望-青色面発光レーザーと青色量子ドットレーザー-
Journal Volume Year Pages Concerned
応用物理、第69巻、第10号、pp. 1196-1199 69 2000.10 1196

Author Title of Article
Hiroaki Watabe, Kaoru Arakawa, and Yasuhiko Arakawa Nonlinear Inverse Filter Using ε-Filter and Its Applications to Image Restoration
Journal Volume Year Pages Concerned
IEICE Trans. Fundamentals, vol. E 83-A, no. 2, pp. 283-290 E83-A 2000.2 283

Author Title of Article
J. M. Z. Ocampo, N. Kamata, K. Hoshino, M. Hirasawa, K. Yamada, M. Nishioka, and Y Arakawa Spectroscopic discrimination of nonradiative centers in quantum wells by two-wavelength excited photoluminescence
Journal Volume Year Pages Concerned
J. CrystalGrowth, Vol. 210, pp. 238-241 210 2000. 2 238

Author Title of Article
J. M. Z. Ocampo, N. Kamata, K. Hoshino, K. Endoh, K. Yamada, M. Nishioka, T. Someya and Y Arakawa Spectroscopy of nonradiative recombination centers in quantum wells by two-wavelength excited photoluminescence
Journal Volume Year Pages Concerned
J. Lumin., Vol. 87-89, pp. 363-365 87 2000. 5 363

Author Title of Article
Z. W. Zheng, B. Shen, R. Zhang, Y. S. Gui, C. P. Jiang, Z. X. Ma, S. L. Giuo, Y. SHi, T SOmeya and Y Arakawa Occupation of the double subbands by the two-dimensional electron gas in the triangular quantum well at AlGaN/GaN heterostructures
Journal Volume Year Pages Concerned
Phys. Rev. B, 62, R7739-7745 62 2000.5  

Author Title of Article
R. Cingolani, M. De Giorgi, R. Rinaldi, H. Lipsanen, M. Sopanen, K. Uchida, N. Miura and Y Arakawa Effects of electron-hole correlation in quantum dots under high magnetic field (up to 45T)
Journal Volume Year Pages Concerned
Physica E, vol. 7, No. 3-4, pp. 346-349 7 2000.5 346

Author Title of Article
Ph. Lelong, K. Suzuki, G. Bastard, H. Sakaki, and Y. Arakawa Enhancement of the Coulomb correlations in typeII quantum dots
Journal Volume Year Pages Concerned
Physica E, vol. 7, No. 3-4, pp. 393-397 7 2000.5 393

Author Title of Article
B. Shen, T. SOmeya, O. Moriwali, and Y. Arakawa Photoluminescence from two-dimensional electron gas in modulation-doped AlGaN/GaN heterostructures
Journal Volume Year Pages Concerned
Physica E, vol. 7, No. 3-4, pp. 939-943 7 2000.5 939

Author Title of Article
Xin-Qi Li and Y. Arakawa Single qubit from two coupled quantum dots: An approach to semiconductor quantum computations
Journal Volume Year Pages Concerned
Phys. Rev. A, Vol. 63 012302, 63 2000.12  

Author Title of Article
Y. Arakawa(Invited) Progress in GaN-based Quantum Dots and Heterostructures
Journal Volume Year Pages Concerned
International Workshop on Novel Gain Materials, Wueraburug   2001.2  

Author Title of Article
Y. Arakawa, T. Someya, and K. Tachibana Progress in Growth and Physics of Nitride-Based Quantum Dots (Editor's Choice)
Journal Volume Year Pages Concerned
Phys. Stat. Sol(B), 224, 1-11   2001.1 1

Author Title of Article
Y. Arakawa(Invited)  
Journal Volume Year Pages Concerned
Photonics West, SPIE   2001.1  

Author Title of Article
K. Suzuki and Y. Arakawa Near 1.3mm EMission at Room Temeperature from InAsS/GaAs Self-Assembled Quantum Dots on GaAs Substrates
Journal Volume Year Pages Concerned
phys. stat. sol. (b)224, 139-142(2001)   2001 139

Author Title of Article
Arakawa, T. Someya, and K. Tachibana Progress in Growth and Physics of Nitride-Based Quantum Dots
Journal Volume Year Pages Concerned
phys. Sta. Sol. (b)224, 1-11(2001)   2001 1

Author Title of Article
R. Rinaldi, M. DeVittorio, R. CIngolani, U. Hohenester, E. Molinari, H. Lipsane, I Tulkki I Ahonelto K Uchida N Correlation Effects in Strain-Induced Quantum Dots
Journal Volume Year Pages Concerned
phys. Sta. Sol. (b)224, 1-11(2001)   2001 1


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